Enhanced magnetization and ferrimagnetic behavior of normal spinel ZnFe2O4 thin film irradiated with femtosecond laser

We report on spatially selective change of magnetism from paramagnetic to ferrimagnetic-like behaviors in normal spinel ZnFe₂O₄ thin film under irradiation with 780 nm femtosecond laser pulses. The distribution of Zn²⁺ and Fe³⁺ ions in the irradiated region on the film surface becomes disordered because of local heating to high temperatures, and the metastable phase of ZnFe₂O₄ is frozen in by the rapid quenching after irradiation, resulting in the formation of the ferrimagnetic phase. The ferrimagnetic phase reverts to the paramagnetic state by annealing at 800°C. The present technique is useful for two-dimensional patterning of magnetic thin films.     

Influence of the plasma parameters on the properties of aluminum oxide thin films deposited by laser ablation

The plasma produced by the ablation of a high purity Al₂O₃ target, using the fundamental line (1064 nm) of a Nd:YAG laser, was characterized. The laser fluence was varied in order to study its effect on the characteristics of the produced plasma as well as on the properties of the material deposited. Optical emission spectroscopy (OES) was used to determine the type of excited species present in the plasma. The mean kinetic energy of the ions and the maximum plasma density were determined from the time of flight (TOF) curves, obtained with a planar Langmuir probe. The obtained results reveal that the fast peak in the probe curve could be attributed to Al III, while the slow peak corresponds to the Al II. Aluminum oxide thin films were then deposited under the same conditions of the diagnosed plasma, in an attempt to correlate the plasma parameters with the properties of the deposited material. It was found that when Al II ion energies are lower than 461.0 eV the films deposited have structural characteristics similar to that of α-Al₂O₃, whereas at ion energies greater than 461.0 eV amorphous material was obtained.     

Broad excitation of Er luminescence in Er-doped HfO2 films

We investigated the broad and sensitized luminescence properties of Er-doped HfO₂ films synthesized by pulsed laser deposition (PLD) and ion implantation techniques. In the investigation we focused on the mechanism of energy transfer in the host matrix. Based on the comparison of photoluminescence (PL), photoluminescence excitation (PLE), and cathode-luminescence (CL), as well as on microstructure measurements, an excitation transfer process resulting in the broad excitation for Er, luminescence at 1540 nm, is identified. In this process, the oxygen vacancies and Hf in the host HfO₂ serve mainly as effective sensitizers for neighboring Er ions in the nonresonant excitation process. Furthermore, the direct Er³⁺ intra-4f transitions and full spectral emission of Er ions in the HfO₂ matrix are clearly observed under the wide-spectrum excitation in the CL measurement. This reveals more detailed features for the energy transfer and transition processes.     

Vertical electrical conduction in pentacene polycrystalline thin films mediated by Au-induced gap states at grain boundaries

Vertical electrical conduction in Au/(polycrystal-line pentacene)/Al diode structures and the influence of the kinetic energy of incident Au atoms on the conduction property have been comprehensively studied using current–voltage–temperature (I–V–T) measurements, ultraviolet photoelectron spectroscopy (UPS), atomic-force-microscope (AFM) current imaging, etc. In the I–V characteristics, a symmetrical ohmic current component appeared when a low voltage was applied, and a super-linear one appeared when a high positive voltage was applied to Au. The component in the high-forward-voltage region was concluded to be a thermionic emission of holes from Au with a 0.23-eV injection barrier, which is the normal hole conduction through the highest occupied molecular orbital of pentacene. On the other hand, the ohmic component was concluded to be a metal-like electron transport through high-density gap states at grain boundaries which were induced by the Au penetration into pentacene. UPS and I–V–T measurements clearly indicated the generation of the gap states and the enhancement of their density by the reduction of Au kinetic energy. For vertical-type devices with polycrystalline organic films, the ohmic conduction through the grain boundary will increase the leakage current. On the contrary, it possibly enhances the carrier injection in lateral-type transistors in the case of top-contact configuration.     

Limited volume thin film deposition on geometrically complicated substrates

In this paper we report a study on the elastic scattering of electrons by lithium and sodium atoms in the presence of circularly polarized resonant laser field within the framework of the two-state rotating wave approximation. The effect of laser on projectile electrons is described by Volkov states. The frequency of the laser field is chosen to match with the 2s–3p (3s–3p) transition frequency in lithium (sodium) atoms. The total and differential elastic cross sections with single photon exchange are calculated for intermediate energies (50–150 eV) and laser intensity (10⁷–10¹¹ W cm^-2). An erratum to this article can be found online at http://dx.doi.org/. An erratum to this article can be found at     

Performance comparison of interferometer topologies for carrier-envelope phase detection

Performance and noise immunity of different interferometer set-ups for carrier-envelope phase detection are compared. The frequently used Mach–Zehnder interferometer is found to be easily corrupted by acoustic noise contributions and air streaks, whereas a quasi-common-path variant of the f-to-2f interferometer exhibits a 40% reduction of residual noise. This comparative analysis also provides deeper insight into additional mechanisms that are currently limiting the performance of carrier-envelope phase stabilization schemes.     

Polarized spectral properties of Pr3+ ions in NaGd(MO4)2 crystal

A Pr³⁺:NaGd(MoO₄)₂ single crystal has been grown by the Czochralski method. The polarized absorption spectra, polarized fluorescence spectra, and fluorescence decay curves of the crystal were measured at room temperature. The Judd–Ofelt intensity parameters Ω _t,q (t=2,4,6) and the spectroscopic parameters related to the ³ P ₀ and ¹ D ₂ multiplets were obtained and analyzed. The decay mechanisms for the ³ P ₀ and ¹ D ₂ multiplets were also discussed.     

Observation of enhanced beaming from photonic crystal waveguides

We report on the experimental observation of the beaming effect in photonic crystals using experimentally mapped spatial field distributions of energy emitted from a subwavelength photonic crystal waveguide into free-space, rendering with crisp clarity the diffractionless beaming of energy. Our experimental data agree well with our numerical studies of the beaming enhancement in photonic crystals with modulated surfaces. Without loss of generality, we study the beaming effect in a photonic crystal scaled to microwave frequencies and demonstrate the technological capacity to deliver long-range wavelength-scaled beaming of energy.     

SBN thin films growth by RF plasma beam assisted pulsed laser deposition

SBN thin films were grown on MgO and Silicon substrates by PLD and RF-PLD (radiofrequency assisted PLD) starting from single crystal Sr_0.6Ba_0.4Nb₂O₆ and ceramic Sr_0.5Ba_0.5Nb₂O₆ stoichiometric targets. Morphological and structural analyses were performed on the SBN layers by AFM and XRD and optical properties were measured by spectroellipsometry. The films composition was determined by Rutherford Backscattering Spectrometry. The best set of experimental conditions for obtaining crystalline, c-axis preferential texture and with dominant 31° in-plane orientation relative to the MgO (100) axis is identified.     

Characteristics of ZnO epilayer on the post-annealed buffer layer on GaN/sapphire substrate by pulsed laser deposition

We employed epi-GaN substrates for ZnO film growth, and studied the deposition and post-annealing effects. ZnO films were grown by pulsed laser deposition (PLD) method. The as-grown films were annealed for one hour under atmospheric pressure air. ZnO morphologies after annealing were investigated and the post-annealed ZnO films grown at T _g =700^oC have very smooth surfaces and the rms with roughness is about 0.5 nm. Finally, ZnO post-annealed buffer layer was inserted between ZnO epilayer and GaN/sapphire substrates. It is confirmed by AFM that growth temperature of 700^oC helps the films grow in step-flow growth mode. It is observed by cathode luminescence spectrum that the ZnO film grown at 700^oC has very low visible luminescence, indicating the decrease of the deep level defects. It is also revealed by Hall measurements that carrier concentration is decreased by increasing the growth temperatures. It is suggested that low temperature buffer layer growth and post-annealing technique can be used to fabricate ZnO hetero-epitaxy.     

Development of a compact CO2 sensor based on near-infrared laser technology for enological applications

This paper reports the development of an infrared laser spectrometer using commercial diode laser emitting at 2.68 μm. The instrument is designed to measure CO₂ concentrations above a glass poured with a sparkling liquid, such as beer or champagne in the present case. This spectrometer was developed in order to realize the cartography of CO₂ outgassing in the headspace above various glasses. We provide details of the instrument design and data processing. Absorption lines were carefully selected to minimize interferences from neighboring water vapor transitions. The instrument performance allows to measure ambient CO₂ concentrations so that one can be very confident in the CO₂ concentrations measurements above the glass. Some preliminary results on sparkling liquids such as beer and champagne are presented and compared to a model describing the flux of CO₂ discharging from glasses due to the contribution of bubbles.     

Optical and IR studies on r.f. magnetron sputtered ultra-thin MoO3 films

Ultra-thin MoO₃ films were deposited onto glass and Si substrates by r.f. magnetron sputtering. The optical and IR properties of the films were studied in the range of 250 to 1000 nm and 400 to 1500 cm⁻¹, respectively. The optical transmission spectra show a significant shift in absorption edge. The energy gap of the films deposited at 373 K and 0.1 mbar was found to be 3.93 eV, and it decreases with increasing substrate temperature and decreasing sputtering pressure. The IR transmittance spectra shows strong modes of vibrations of Mo=O and Mo–O–Mo units of MoO₃ molecule. A significant change in energy gap and a shift in frequency of IR modes were observed in ultra-thin MoO₃ films.     

The effects of chemical etching of porous silicon on Raman spectra

We have investigated the effects of chemical etching on Raman spectra of porous silicon. The as-anodized porous silicon consisted mainly of crystalline silicon, as indicated by the Raman spectra. The background in the spectrum was strong, indicating that the porous silicon surface was rough due to the presence of pores. When chemical etching was performed five times, the Raman spectrum revealed the presence of spherically shaped nanocrystalline silicon whose diameter was around 3.5 nm. Further chemical etching, however, extinguished the nanocrystallites, in addition to smoothing the surface morphology.     

Transient characteristics of green upconversion emission of Er3+ in MgO:LiNbO3 crystal: Mg threshold concentration effect

Transient characteristics of upconverted emission (560 nm) of Er³⁺ in LiNbO₃ crystals codoped with 0–7.4 mol% MgO were studied under pulse excitation at 800-nm wavelength. The results show that the transients display considerable Mg-doping-level-dependent nonexponential behavior and a clear Mg optical-damage-resistance threshold concentration effect. Below the Mg threshold concentration, the lifetime increases slightly with the increased Mg concentration. Above the threshold, however, the lifetime drops abruptly by 4–7 times and the nonexponential feature becomes more evident. It is found that each transient can be fitted by a double-exponential function contributed from isolated and clustered Er³⁺ sites. The fit parameters show that doping of MgO above the threshold concentration increases the clustered Er site concentration and the nonradiative cross relaxation probability. The Mg threshold concentration effect derived from the transients is in qualitative agreement with that from the fluorescence spectrum measured as a function of the Mg concentration. The effect of the Mg threshold concentration on the clustered Er site concentration is qualitatively explained on the basis of the microscopic defect model of MgO:LiNbO₃ and is conducted with the Mg site change around the threshold concentration.     

Ultrafast dynamic ellipsometry measurements of early time laser ablation of titanium thin films

The dynamics of laser ablated titanium thin films are investigated using a recently developed technique that measures time-resolved and one-dimensional spatially-resolved ablation dynamics in a single shot. Ultrafast dynamic ellipsometry, a technique based on space-shifted spectral interferometry, uses the time-dependent frequency of a chirped laser pulse to provide time encoding, allowing the picosecond probing of material dynamics in a single shot. With this technique, the sample is probed at two different incident angles with both s- and p-polarized light, which measures the motion of the material and any change in its complex refractive index. Ultrafast dynamic ellipsometry is applied to study the mechanism of initiation by laser-based optical detonators that employ the ablation of titanium thin films. The resulting data indicate that the titanium is ablated as a fragmented flyer and not as an expanding plasma.     

The influence of wire shape on surface plasmon mode distribution

The influence of the nanowire shape on the excitation of surface plasmon polaritons at metallic nanowire arrays is studied numerically. For a system of silver nanowires housed on a polymer substrate, nanowires with rectangular and elliptical cross sections are compared. It was found that in the case of rectangular nanowires the excitation efficiency is higher for surface plasmons at the polymer–metal interface than for surface plasmons at the air–metal interface. Conversely, in the case of elliptical nanowires the air–metal plasmon modes are stronger. Further, it is noted that the nanowire shape directly influences the position of the surface plasmon resonance.     

Structural properties of high-quality sputtered Fe films on Al2O3(1120) and MgO(001) substrates

High-quality thin Fe films were deposited on MgO(001) and Al₂O₃(1120) substrates in the thickness range from 7 to 50 nm. The structural properties have been studied by out-of-plane and in-plane X-ray scattering experiments. From the out-of-plane measurements the electron density profile was determined together with interface and surface roughness parameters. Fe on Al₂O₃ grows along the [110]-direction with a structural coherence length comprising about the total film thick ness and a very small mosaicity. From in-plane scattering experiments a three-domain structure was observed. On MgO(001) substrates Fe grows in the [001]-direction, with the Fe [100]-axis parallel to the MgO [110]-axis. On both substrates, the Fe films exhibit a very small surface and interface roughness, indicative for a high quality of the sputtered samples.     

Thermo-optic coefficients of monoclinic KLu(WO<Subscript>4</Subscript>)<Subscript>2</Subscript>

The three thermo-optic coefficients of the biaxial laser host KLu(WO₄)₂ are measured at 633 nm by a deflection method. Their values at 300 K amount to ∂ n _g /∂ T=−7.4×10⁻⁶ K⁻¹; ∂ n _m /∂ T=−1.6×10⁻⁶ K⁻¹ and ∂ n _p /∂ T=−10.8×10⁻⁶ K⁻¹. Nearly athermal propagation directions are found for polarizations along the N _m and N _p dielectric axes.     

Polycrystalline silicon films obtained by hot-wire chemical vapour deposition

Silicon films were deposited at moderate substrate temperatures (280–500° C) from pure silane and a silane-hydrogen mixture (10% SiH₄, 90% H₂) in a hotwire CVD reactor. The morphology, structure and composition of the samples were studied with scanning electron microscopy, transmission electron microscopy, transmission electron diffraction, X-ray diffraction, Raman spectroscopy and secondary ion mass spectrometry. The sample deposited at 500° C with pure silane has an amorphous structure, whereas the samples obtained from silane diluted in hydrogen have a polycrystalline structure, even that grown at the lowest temperature (280° C). Polycrystalline samples have a columnar structure with 0.3–1 m crystallite sizes with preferential orientation in [220] direction. Deposition rates depend on the filament-substrate distance and range from 9.5 to 37 Å/s for the polycrystalline samples. The high quality of the polycrystalline samples obtained makes the hot-wire technique very promising. Moreover, it is expected to be easily scaled up for applications to large-area optoelectronic devices and to photovoltaic solar cells.     

Numerical investigation of the effect of signal trapping on soot measurements using LII in laminar coflow diffusion flames

Laser-induced incandescence has been rapidly developed into a powerful diagnostic technique for measurements of soot in many applications. The incandescence intensity generated by laser-heated soot particles at the measurement location suffers the signal trapping effect caused by absorption and scattering by soot particles present between the measurement location and the detector. The signal trapping effect was numerically investigated in soot measurements using both a 2D LII setup and the corresponding point LII setup at detection wavelengths of 400 and 780 nm in a laminar coflow ethylene/air flame. The radiative properties of aggregated soot particles were calculated using the Rayleigh–Debye–Gans polydisperse fractal aggregate theory. The radiative transfer equation in emitting, absorbing, and scattering media was solved using the discrete-ordinates method. The radiation intensity along an arbitrary direction was obtained using the infinitely small weight technique. The contribution of scattering to signal trapping was found to be negligible in atmospheric laminar diffusion flames. When uncorrected LII intensities are used to determine soot particle temperature and the soot volume fraction, the errors are smaller in 2D LII setup where soot particles are excited by a laser sheet. The simple Beer–Lambert exponential attenuation relationship holds in LII applications to axisymmetric flames as long as the effective extinction coefficient is adequately defined.