过渡金属化合物OsB2与OsO2低压缩性的第一性原理计算研究

利用基于密度泛函理论平面波赝势法的第一性原理计算, 研究了过渡金属化合物OsB₂和OsO₂的金红石相、黄铁矿相与萤石相三种结构在高压下的状态方程和结构特性以及OsO₂可能的高压相变.理论计算结果支持OsB₂与OsO₂的萤石相是潜在超低可压缩性的硬性材料.同时，也分析了它们的电子结构，力求理解大体变模量和高硬度的微观机制.结果表明，可以利用过渡金属高的价电子浓度，掺入硼、氧、碳、氮等轻的元素形成强的 关键词： 过渡金属化合物 密度泛函理论 低压缩性 高压     

5d过渡金属二硼化物的结构和热、力学性质的第一性原理计算

利用基于密度泛函理论的第一性原理系统地研究了5d过渡金属二硼化物TMB₂ (TM=Hf–Au) 的结构、热学、力学和电学性质. 我们考虑了三种结构, 分别为AlB₂, ReB₂和WB₂结构. 计算得到的晶格常数与先前的理论和实验研究符合得很好. 通过计算生成焓预测了化合物的热力学稳定性; 从HfB₂到AuB₂, 生成焓的整体趋势是逐渐增加的. 在所考虑的结构中, 对HfB₂和TaB₂, AlB₂结构是最稳定的; 对WB₂, ReB₂, OsB₂, IrB₂和AuB₂, ReB₂结构是最稳定的; 对PtB₂, WB₂结构是最稳定的. 在所考虑的化合物中, ReB₂结构的ReB₂具有最大的剪切模量(295 GPa), 是最硬的化合物, 与先前的理论和实验结果相符. 计算得到的总态密度显示所有结构都具有金属特性. 讨论了系列化合物的变化趋势. 关键词： 弹性性质 热力学性质 第一性原理 5d过渡金属二硼化物     

三元层状陶瓷M-Al-N(M=Ti,Zr,Hf)的结构及力学性质的第一性原理模拟

基于第一性原理方法,探索M-Al-N（M=Ti,Zr,Hf）结构的稳定性,计算其力学性质.计算M-Al-N化合物的能量,发现除实验已知的结构Ti₂AlN和Ti₄AlN₃、Zr₂AlN、Hf₂AlN外,还存在两种新的热力学稳定结构Zr₄AlN₃、Hf₄AlN₃.弹性常数和声子谱的计算,表明这两个结构是力学稳定和晶格动力学稳定的.计算M₂AlN和M₄AlN₃的力学性质,发现它们具有高的体模量、剪切模量、弹性模量、维氏硬度等;分析其力学性质随组分比例、组成元素的变化规律,为该类材料的选择和应用提供理论依据.最后计算M₂AlN和M₄AlN₃的电子态密度和分态密度、电子密度分布、Mulliken群分析等.     

第一性原理计算XHfO3(X=Ba,Sr)的结构、弹性和电子特性

采用基于密度泛函理论的第一性原理计算方法研究了钙钛矿结构的BaHfO₃和SrHfO₃的基态性质，包括优化后的晶格常数、弹性常数、体弹性模量、剪切模量、态密度、能带结构和电荷密度.计算结果表明BaHfO₃和SrHfO₃具有比较大的体弹性模量，它们都是间接带隙的半导体材料，Ba或Sr原子与HfO₃基团之间形成的化学键主要是离子键，而Hf原子与O原子之间形成的主要是共价键. 关键词： 第一性原理 钙钛矿结构 体弹性模量 价键     

第一性原理计算MAlH4(M=Na,K)的结构和弹性性质

基于密度泛函理论研究并比较了两种储氢材料NaAlH₄和KAlH₄的晶格参数,弹性性质和电子结构.计算结果表明NaAlH₄和KAlH₄都是绝缘体,Al—H之间是共价键,M(M=Na,K)与AlH₄之间是离子键.NaAlH₄和KAlH₄的弹性常数都比较小而且NaAlH₄的弹性常数要大于KAlH₄的弹性常数,对此给予了解释. 关键词： 配位金属氢化物 电子结构 弹性性质     

β型烧绿石结构氧化物超导体$lt;i$gt;A$lt;/i$gt;Os$lt;sub$gt;2$lt;/sub$gt;O$lt;sub$gt;6$lt;/sub$gt;($lt;i$gt;A$lt;/i$gt;=K,Rb,Cs)电子能带结构的第一性原理计算

用全势线性缀加平面波方法计算β型烧绿石结构氧化物超导体AOs₂O₆ （A=K,Rb,Cs）的电子能带结构及态密度.计算发现电子自旋轨道耦合和在位库仑势U的作用增大了费米面处态密度值.通过计算还得到这三种化合物电子关联常数λ_c分别为1.55,1.12和0.73.由实验测量与能带计算得到的电子比热容系数的比值得到电子质量提高参数.通过分析这三种化合物电子质量提高参数,推算出它们的电声子耦合常数λ_ep分别为1.56,0.78和1.08.由此提出KOs₂O₆为强电子关联和强电声子耦合系统,而RbOs₂O₆和CsOs₂O₆的电子关联性与电声子耦合为中等. 关键词： β型烧绿石超导体 能带结构 电子关联 电声子耦合     

Heusler合金Pd2 CrAl四方变形、磁性及弹性常数的第一性原理计算

采用基于密度泛函理论的投影缀加波方法研究了Heusler合金Pd₂CrAl的四方变形、磁性和弹性常数. 四方变形中,Pd₂CrAl在c/a≈1.20处出现总能的局域最小值,对应一个稳定的马氏体. Pd₂CrAl的L2₁结构和四方结构的单胞总磁矩分别为3.825μ_B和3.512μ_B. 在这两种结构中Cr原子均是Pd₂CrAl总磁矩的主要贡献者,Pd和Cr原子间存在很强的杂化作用,Cr的3d电子的t_2g和e_g两个亚能带是Pd₂CrAl磁性的主要来源. 弹性常数的计算结果显示,Pd₂CrAl的L2₁结构和四方结构的弹性常数均满足相应结构的稳定性判据. 关键词： Heusler合金 四方变形 磁性 弹性常数     

Cu-N共掺β-Ga2O3的光电性质的第一性原理计算

基于密度泛函理论,本文通过OTFG赝势方法计算了本征β-Ga₂O₃以及Cu-N共掺后β-Ga₂O₃的晶格常数、电子结构以及光学特性.计算结果表明本征β-Ga₂O₃的禁带宽度为4.5 eV;Cu和N掺入β-Ga₂O₃后属于受主杂质,并且引入了深受主能级,这表明Cu-N共掺后β-Ga₂O₃变为p型半导体材料;光学性质计算结果表明本征β-Ga₂O₃的静介电函数为2.5,掺杂后β-Ga₂O₃的静介电函数增大,对电荷的存储能力增强;此外,Cu-N的共掺对β-Ga₂O₃的吸收系数、反射率在能量较低的区域的影响较大,而对能量较高的区域影响较小.     

四角晶相HfO2(001)表面原子和电子结构研究

采用基于第一性原理的密度泛函理论研究了四角晶相二氧化铪(t-HfO₂)体相及 其(001)表面的原子几何与电子结构.理论计算结果表明，t-HfO₂(001)表面不会 产生重构现象.与体相电子结构相比, t-HfO₂(001)表面态密度明显高于体相态 密度.其次，表面原子的态密度更靠近费米能级(E_F)，价带往低能量处移动，并 有表面态产生.计算结果表明了t-HfO₂表面禁带宽度明显低于体相的禁带宽度. t-HfO₂(001)的表面态产生以及表面禁带宽度减小是由于Hf原子与O原子的配位 数减少，表面原子周围的环境发生变化而引起的. 关键词： 密度泛函理论 2(001)')" href="#">t-HfO₂(001) 表面电子结构     

Al的微观组态与LaNi3.75Al1.25的结构和弹性第一性原理研究

在全电子水平上，采用广义梯度近似密度泛函理论和全势能线性缀加平面波方法并结合二维立方拟合方法，对LaNi_3.75Al_1.25合金的晶体结构与弹性性质进行了理论研究.计算结果给出合金的晶格常数a=b=0.5137　nm，c=0.4018　nm，Al原子在晶胞中的微观分布为同时占据部分3g和2c等价格位，弹性常数C₁₁+C₁₂=281.2，C₁₃=82.3，C₃₃=227.3，以及体弹性模量B＝124.5、切变模量G＝68.2　GPa.还对态密度、能带结构和电荷密度进行了计算分析，并给出材料LaNi_3.75Al_1.25的电子线性比热系数23.45　mJ/molK². 关键词： 3.75Al_1.25')" href="#">LaNi_3.75Al_1.25 储氢合金 全势能线性缀加平面波 弹性常数     

Microhardness and bulk modulus of binary tetrahedral semiconductors

Using the plasma oscillations theory of solids, the microhardness and bulk modulus of binary tetrahedral semiconductors have been calculated. New relations between plasmon energy and these parameters have been proposed. Our calculated values of microhardness and bulk modulus from two different equations are in excellent agreement with the experimental values and the values reported by other workers. In the present model, no experimental data are required except the plasmon energy, and one can predict the value of these parameters in the case of unknown semiconductors where experimental measurements have not yet been made due to a lack of availability of experimental melting points, dielectric constants or bond lengths.     

金属线膨胀系数、德拜温度和杨氏模量之间关联特性

利用解析势能函数研究了FCC,HCP及BCC共19种金属的线膨胀系数、德拜温度和杨氏模量等之间的关联性,给出了金属的德拜温度和杨氏模量的解析计算式,其理论计算值与实验值符合较好.     

Thermodynamics and elastic properties of Ta from first-principles calculations

<正>Within the framework of the quasiharmonic approximation,the thermodynamics and elastic properties of Ta, including phonon density of states(DOS),equation of state,linear thermal expansion coefficient,entropy,enthalpy, heat capacity,elastic constants,bulk modulus,shear modulus,Young’s modulus,microhardness,and sound velocity, are studied using the first-principles projector-augmented wave method.The vibrational contribution to Helmholtz free energy is evaluated from the first-principles phonon DOS and the Debye model.The thermal electronic contribution to Helmholtz free energy is estimated from the integration over the electronic DOS.By comparing the experimental results with the calculation results from the first-principles and the Debye model,it is found that the thermodynamic properties of Ta are depicted well by the first-principles.The elastic properties of Ta from the first-principles are consistent with the available experimental data.     

Some Properties of Si,Ge, and α-Sn Using Pseudopotential Theory

The pseudopotential theory beyond second order with our well establishedsingle parametric model potential is employed to compute total crystalenergy, static bulk modulus, energy band gap at the point X on theJones-zone face and pressure-volume relation (equation of state underpressure) of Si, Ge and α-Sn using Nagy's static local field correction function. The results are compared with those obtained using few other local field correction functions. The present results of total energy are in good agreement with the experimental data. Bulk modulus calculated byNagy's screening function is perfectly matching with the experimentalresults for Ge and α-Sn. Some deviation is found in the value of energy band gap.     

Elastic modulus,surface tension,adhesion, and ideal and real strengths of solids

Formulas for the surface tension coefficient, adhesion energy, elastic modulus, and strength of solids versus the atomic density have been derived. The theoretical values of these parameters have been confirmed by experimental data gathered from many metals, insulators, and semiconductors.     

Static and thermophysical properties of chalcogenide crystals with NaCl structure

In the present communication an analysis of interionic potentials in fourteen chalcogenide crystals has been performed. This interionic potential has been used to predict the values of cohesive energy, isothermal bulk modulus and the pressure derivatives of bulk modulus in the solids under study. The many body interaction (MBI) effects have been taken into account within the framework of Hafemeister Zarht potential. Instead of using BM potential the Hafemeister-Zarht (HZ) type short range overlap potential has been considered between nearest as well as between next nearest neighbour ions. The short-range interactions, effective up to second neighbours are treated by considering the hardness parameter as an ionic property. The hardness parameter ρ_ij is evaluated using the data on overlap integrals. The results achieved in the present study are generally in good agreement with available experimental data. Values of cohesive energy, bulk modulus and its pressure derivatives calculated by previous investigators have also been shown for the sake of comparison.     

Plasmon energy, bulk modulus, electronic polarisability of AIBIIIC2VI and AIIBIVC2V ternary chalcopyrite semiconductors

A simple relation between the bulk modulus, plasmon energy, electronic polarisability are given for ternary chalcopyrite semiconductors. Bulk modulus has been evaluated from plasmon energy by proposing a linear relation between them. From bulk modulus electronic polarisability has been evaluated. The estimated values are in good agreement with the experimental values and earlier researchers.     

Ab initio investigation of the structural,elastic and electronic properties of the anti-perovskite TlNCa3

We have investigated the structural, elastic and electronic properties of the anti-perovskite TlNCa₃ using ab initio calculations within the generalized gradient approximation and the local density approximation for the exchange–correlation potential. The lattice constant, bulk modulus, elastic constants and their pressure dependence, energy band structures, density of states and charge density distribution are calculated and analyzed in comparison with the available experimental and theoretical data. The bulk modulus, shear modulus, Young’s modulus, Poisson’s ratio, Lamé’s coefficients, average sound velocity and Debye temperature are numerically estimated for ideal polycrystalline TlNCa₃ aggregates in the framework of the Voigt–Reuss–Hill approximation. This is the first theoretical prediction of the elastic constants and their related properties for TlNCa₃ that requires experimental confirmation.     

Five-parameter equation of state for solids correctly incorporating cohesive energy data

A five-parameter equation of state (EOS) is proposed to correctly incorporate the cohesive energy data in it without physically incorrect oscillations.The proposed EOS is applied to 10 selected metals.It is shown that the calculated compression curves are in good accordance with the experimental data.The values of the bulk modulus and its derivative with respect to pressure extracted from the proposed EOS remain almost unchanged while the data range used is varied.