Multi-step damage accumulation in irradiated crystals

This article presents a model of damage accumulation in irradiated crystals. This model is based on the assumption that the damage accumulation occurs through a series of structural transformations triggered by the destabilization of the current structure of crystals. Formal equations describing the damage accumulation build-up and experimental assessment of the model are presented and discussed in the framework of the actual knowledge of radiation effects in oxide crystals (yttria-stabilized zirconia (YSZ) and magnesium-aluminate spinel (MAS)), silicon carbide crystals and zirconia implanted nickel crystals.     

Hardnes and resistivity of amorphous carbon thin films deposited by laser ablation

Amorphous carbon thin films were deposited by laser ablation of a graphite target, using the fundamental line of a 5 ns Nd:YAG laser. Deposition was carried out as a function of the plasma parameters (mean kinetic ion energy and plasma density), determined by means of a planar probe. In the selected working regimes the optical emission from the plasma is mainly due to atomic species, namely C⁺ (426.5 nm); however, there is also emission from other atomic species and molecular carbon. The hardness and resistivity could be varied in the range between 10 and 25 GPa, and 10⁸ and 10¹¹ Ω cm, respectively. The maximum values were obtained at a 200 eV ion energy and 6×10¹³ cm⁻³ plasma density, where the maximum quantity of C–C sp³ bonds was formed, as confirmed by Raman spectroscopy.     

Physical characteristics of polyimide films for flexible sensors

Physical characteristics of polyimide films, including optical, micro/nano mechanical, and thermophysical characteristics were investigated using a photometric, a nanoindentation, and a thermomechanical analyzer for applications in flexible sensors. Experimental results show that UV light cannot transmit into the polyimide films. The transmittances, with a maximum of about 86%, at VIS and near IR lights decrease with increasing PI film thicknesses. The mechanical characteristics were determined using tensile, bending moment, and nanoindentation testing. The stress–strain curve approximated bilinear characteristics, the load–unload bending moment exhibited hysteresis, and nanoindentation generated elastic energy dissipation in the loading–unloading region. Nanoindentation showed an almost uniform hardness and a reduced Young’s modulus of about 0.181±0.03 and 3.21±0.06 GPa, respectively, when the penetrating depth was more than about 2 μm. Thermophysical characteristics were greatly influenced on 8.3 and 25 μm specimens due to the higher relaxation of thin PI films. The thermal expansion remained steady when the thickness was over 50 μm. The results show that PI films have potential in flexible sensing and higher temperature fabrication.     

Infrared absorption spectra of pure and doped YAl<Subscript>3</Subscript>(BO<Subscript>3</Subscript>)<Subscript>4</Subscript> single crystals

Several weak absorption bands have been observed in the optical absorption spectra of pure and rare-earth-doped YAl₃(BO₃)₄ single crystals in the 3350– 3650 cm⁻¹ wave number region. Two of them, peaking at about 3377 cm⁻¹ and 3580 cm⁻¹ in the 8 K spectra, appear in most of the samples. They are tentatively attributed to the stretching mode of OH⁻ ions incorporated in the crystal during the growth. An additional absorption band at about 5250 cm⁻¹ at 8 K has also been detected in almost all samples. The temperature and polarization dependences of these bands, and their possible origin, are discussed.     

Zinc oxide, a multifunctional material: from material to device applications

In this paper we report on some of the recent advances in transparent thin film oxide semiconductors, specifically zinc oxide produced by radio frequency magnetron sputtering at room temperature, with multifunctional properties. By controlling the deposition parameters it is possible to produce undoped material with electronic semiconductor properties, or by doping it to get either n-type or p-type semiconductor behavior. In this work we refer to our experience in producing n-type doped zinc oxide as transparent electrode to be used in optoelectronic applications such as solar cells and position sensitive detectors, while the undoped zinc oxide can be used as active layer of fully transparent thin film transistors.     

Temperature dependence of photoconductivity and persistent photoconductivity of single ZnO nanowires

Photoelectrical properties of single ZnO nanowires have been investigated using photocurrent–voltage characteristics measurements varying with excitation photon energy and temperature. It is found that persistent photoconductivity (PPC) exists, and the PPC decreases with decreasing temperature. The temperature dependence of the PPC effect indicates that thermally activated return of electrons from shallow traps is responsible for the PPC phenomenon. The photosensitivity is found to be linear with the applied voltage, and it increases with decreasing temperature. A temperature dependence of photoconductivity gain was introduced to explain the experimental results.     

Characterization for metamaterials with a high refractive index formed by periodic stratified metallic wires array

Ultralong ZnO nanowires were successfully prepared on a large scale by a microwave-assisted aqueous route without using any surfactant or template at relatively low temperature of 120°C. The obtained nanowires were characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), transmission electron microscopy (TEM), high resolution transmission electron microscopy (HRTEM), and energy-dispersive X-ray spectrum (EDX). The growth mechanism and photoluminescence of the one-dimensional nanostructure, and photovoltaic performances for dye-sensitized solar cell (DSSC) of the nanowires were discussed in detail.     

Absorption measurements in InSe:Ho single crystal under an electric field

InSe:Ho single crystal was grown by Bridgman-Stockberger method. Electric field effects on the absorption measurements have been investigated as a function of temperature in InSe:Ho single crystal. The absorption edge shifted towards longer wavelengths and a decrease of intensity in absorption spectra occurred under an electric field of 7.5 kV/cm. Using absorption measurements, steepness parameter and Urbach energy were calculated under electric field. Applied electric field caused an increase in the Urbach energy. At 10 K and 320 K, the first exciton energies were calculated as 1.322 and 1.301 eV for zero voltage and 1.245 and 1.232 eV for applied electric field, respectively.     

Growth and characterization of L-Alanine-doped Zinc Thiourea Chloride single crystal (ZTC)

Single crystal of L-Alanine-doped Zinc Thiourea Chloride (ZTC) was grown by slow evaporation technique. L-Alanine was added in saturated ZTC solution by molar percent. The second-harmonic generation efficiency was studied by Kurtz and Perry powder SHG test for 1, 2, and 3 mole% L-Alanine-doped ZTC and compared with pure ZTC. We observed enhancement in the SHG efficiency of L-Alanine-doped ZTC. Higher enhancement was observed for 3 mole% L-Alanine-doped ZTC. Incorporation of L-Alanine in the crystal was confirmed by energy dispersive X-ray analysis (EDAX). The Fourier transform infrared spectroscopy (FTIR) qualitatively confirms the presence of all the functional groups. The unit cell parameters and crystal structure were determined by single crystal X-ray diffraction. The UV-visible absorption spectra of L-Alanine-doped ZTC show excellent transmittance from 300 nm to 1100 nm. The thermal stability of the grown crystal was also studied by thermo-gravimetric analysis (TGA).     

Multi-jet events in the k T -factorisation scheme

A Markovian Monte Carlo algorithm for multi-parton production in the high-energy limit is proposed and the matching with unintegrated parton densities is discussed.     

Electron diffraction study of various lattice defects in a Bi<Subscript>4</Subscript>Ge<Subscript>3</Subscript>O<Subscript>12</Subscript> crystal

Lattice defects in a scintillation detector made of Bi₄Ge₃O₁₂ (BGO) could severely impact detector efficiency via non-radiative transfer of electron excitation, thus making thorough investigations of these defects highly important. Here we present a combined experimental and theoretical study of two- and three-dimensional defects in a Czochralski-grown BGO crystal. Upon examination by transmission electron microscopy the selected-area electron diffraction (SAED) patterns in two neighboring parts of the specimen reveal different kinds of two- and three-dimensional defects. Three sub-grains misoriented at 2.47° with reference to each other and probable presence of stacking faults lying in {011} planes were observed in the first examined local area. The SAED image taken from an area in the close neighborhood is much more complicated and is explained in terms of the superposition of reflections from: (i) a partially textured GeO₂ second-phase inclusion; (ii) the basic lattice of BGO and (iii) a superlattice-like structure based on the BGO lattice. The atomic structure of such a superlattice-like structure was theoretically modeled and the corresponding simulated SAED patterns were found to be in good agreement with the experimentally observed one.     

Strong-coupling theory of mobility collapse in GaN layers

Within the framework of strong-coupling theory we study the effect of highly negatively charged threading dislocations on the electron mobility collapse in n-GaN layers. An analytical expression is derived showing the way in which the electrically active dislocations establish the critical carrier concentration at which the collapse occurs. Results are presented suggesting that the experimental collapse data can be utilized for determining the characteristic magnitude of the statistical filling factor of dislocation related traps in the GaN bandgap.     

Subthreshold regime in rubrene single-crystal organic transistors

Organic field-effect transistors were fabricated with vapor-grown rubrene single crystals in a staggered top-contact configuration. The devices were electrically characterized by measuring the transfer curves at low drain voltage. In parallel to these measurements, a model is developed to account for the subthreshold regime of the transistors. The model is based on the multiple trapping and thermal release concept, which assumes that charge transport is limited by a single level of shallow traps located close to the transport band edge. It is shown that the threshold voltage no longer establishes at the transition between the depletion and accumulation regimes. Instead, the threshold corresponds to the point at which traps are filled. This results in a subthreshold current that varies linearly with gate voltage. Moreover, the subthreshold current at low drain voltages increases with drain voltage. These finding are in good agreement with the experimental data.     

Cooperative downconversion and near-infrared luminescence of Tb<Superscript>3+</Superscript>–Yb<Superscript>3+</Superscript> codoped lanthanum borogermanate glasses

In the present paper, we investigate the near-infrared (NIR) luminescence of Tb³⁺–Yb³⁺ codoped lanthanum borogermanate (LBG) glasses under visible and ultraviolet light excitation. The results indicate that NIR quantum cutting occurs through cooperative energy transfer from Tb³⁺ to Yb³⁺ ions when only 4f ⁸ levels of Tb³⁺ ions are excited in the wavelength region of 300–490 nm. The highest quantum efficiency under the excitation ⁵ D ₄ level of Tb³⁺ at 484 nm is 146%. Ultraviolet excitation that populates the charge transfer band (CTB) of Yb³⁺ near 270 nm does not result in quantum cutting as the fast nonradiative decay from CTB to ² F _5/2 level dominates. These materials are expected to be used as a converting layer for silicon solar cells to enhance their efficiency by splitting each high-energy photon into two NIR photons.     

Thickness distribution of thin amorphous chalcogenide films prepared by pulsed laser deposition

Amorphous chalcogenide thin films were prepared from As₂Se₃, As₃Se₂ and InSe bulk glasses by pulsed laser deposition using a KrF excimer laser. Thickness profiles of the films were determined using variable angle spectroscopic ellipsometry. The influence of the laser beam scanning process during the deposition on the thickness distribution of the prepared thin films was evaluated and the corresponding equations suggested. The results were compared with experimental data.     

Laser-assisted local patterning of ZnO-based spots for mirror-less lasing

ZnO is known as one of the best materials for the implementation of the random lasing effect, associated with mirror-less laser emission in a simultaneously amplifying and highly scattering medium. Normally, the fabrication of this medium requires a rather complicated procedure of deposition and thermal treatment of ZnO-based films on some specific substrates, yielding wurtzite-orientation ZnO nanocrystals. We demonstrate a rapid synthesis of highly efficient ZnO-based random lasing spots on a piece of Zn by employing the phenomenon of laser-induced air breakdown. Being ignited near the surface of a Zn target, plasma of the air breakdown serves as a local reactor to locally transform its properties and thus form a film of well-packed 20–40 nm ZnO nanospheres. Exhibiting extremely high amplification and scattering, this medium is capable of generating the random lasing effect within the exciton-based photoluminescent band.     

The sublimation growth of AlN fibers: transformations in?morphology & fiber direction

The growth of AlN fibers using sublimation method was investigated in the temperature range from 1600 °C to 2000 °C. Large-scale AlN fibers are obtained with diameters from 100 nm to 50 μm and lengths up to several millimeters. The fiber morphology and growth direction are characterized by X-ray diffraction (XRD), field emission scanning electron microscope (SEM), high-resolution transmission electron microscopy (HRTEM), and Raman scattering. The fibers change from wire-like to prism-like in morphology and increase in diameter as rising temperatures, accompanying a transformation in axial direction from [10 ] to [0001]. The transformation in the growth direction is discussed in terms of AlN structure and supersaturation of AlN gas species. These results provide useful information for controlling the growth of large-scale AlN fibers.     

Microstructural characterization of ultrafine-grain interstitial-free steel by X-ray diffraction line profile analysis

This paper highlights the microstructural features of commercially available interstitial free (IF) steel specimens deformed by equal channel angular pressing (ECAP) up to four passes following the route A. The microstructure of the samples was studied by different techniques of X-ray diffraction peak profile analysis as a function of strain (ε). It was found that the crystallite size is reduced substantially already at ε=2.3 and it does not change significantly during further deformation. At the same time, the dislocation density increases gradually up to ε=4.6. The dislocation densities estimated from X-ray diffraction study are found to correlate very well with the experimentally obtained yield strength of the samples.     

Influence of fractal surface dimension on the dissolution process of sparingly soluble CaCO<Subscript>3</Subscript> microparticles

The dissolution process of sparingly soluble CaCO₃ microparticles and how the fractal surface dimension of the particles changes during dissolution is analyzed. The particles and the dissolution process are studied using scanning electron microscopy, X-ray diffraction, nitrogen adsorption, laser diffraction and conductance measurements. Ball milling of the particles is shown to maintain the particle crystallinity, and to introduce an increased fractal surface dimension in the 1–10 μm size range. Dissolution is found to increase the surface dimension of initially smooth particles and to maintain the fractal surface roughness of milled particles. The dissolution process increases the relative number of small particles (50 nm–1 μm) whereas the larger ones decrease in size. The solubility of the milled fractal particles was ∼1.8 times higher than that for the initially smooth ones. The presented findings show that developing methods for increasing the fractal surface roughness of particles should be of interest for improving the solubility of poorly soluble drug candidates.     

Dielectric function dynamics during femtosecond laser excitation of bulk ZnO

Using a broad band dual-angle pump-probe reflectometry technique, we obtained the ultrafast dielectric function dynamics of bulk ZnO under femtosecond laser excitation. We determined that multiphoton absorption of the 800-nm femtosecond laser excitation creates a large population of excited carriers with excess energy. Screening of the Coulomb interaction by the excited free carriers causes damping of the exciton resonance and renormalization of the band gap causing broadband (2.3–3.5 eV) changes in the dielectric function of ZnO. From the dielectric function, many transient material properties, such as the index of refraction of ZnO under excitation, can be determined to optimize ZnO-based devices.