一步法电化学沉积Cu(In1-x,Gax)Se2薄膜的特性

在CuCl2、InCl3、GaCl3及H2SeO3组成的酸性水溶液电沉积体系中, 对Mo/玻璃衬底上一步法电沉积Cu(In1-x, Gax)Se2(简写为CIGS)薄膜进行了研究. 为了稳定溶液的化学性质, 在溶液中加入邻苯二甲酸氢钾和氨基磺酸作为pH缓冲剂, 将溶液的pH值控制在约2.5, 并提高薄膜中Ga的含量. 通过大量实验优化了溶液组成及电沉积条件, 得到接近化学计量比贫Cu 的CIGS薄膜(当Cu与In+Ga的摩尔比为1时, 称为符合化学计量比的CIGS薄膜; 当其比值为0.8-1时, 称为贫Cu或富In的CIGS 薄膜)预置层, 薄膜表面光亮、致密、无裂纹. 利用循环伏安法初步研究了一步法电沉积CIGS薄膜的反应机理, 在沉积过程中, Se4+离子先还原生成单质Se, 再诱导Cu2+、Ga3+和In3+发生共沉积. 电沉积CIGS薄膜预置层在固态硒源280 ℃蒸发的硒气氛中进行硒化再结晶, 有效改善了薄膜的结晶结构, 且成份基本不发生变化,但是表面会产生大量的裂纹.     

离子液体电沉积CuInxGa1-xSe2薄膜

采用循环伏安法(CV)对离子液体Reline中三元CuCl₂+InCl₃+SeCl₄体系和四元CuCl₂+InCl₃+GaCl₃+SeCl₄体系的电化学行为进行了研究。研究表明,In³⁺并入三元CIS(Cu-In-Se)薄膜体系和Ga³⁺并入四元CIGS(Cu-In-Ga-Se)薄膜体系均有两种途径：一是发生共沉积,二是直接还原。利用电感耦合等离子体发射光谱(ICP)和扫描电镜(SEM)对沉积电势、镀液温度和主盐浓度对CIGS薄膜组成、镀层表面形貌的影响进行了测试,结果表明通过工艺参数的选择可以控制Ga/(Ga+In)和CIGS薄膜组成并得到化学计量比为Cu_1.00In_0.78Ga_0.27Se_2.13的薄膜。     

Ga和Cu/In衬底上电沉积金属Ga

在酸性水溶液中,分别在金属Ga和Cu/In衬底上进行了Ga电沉积的研究。用循环伏安法研究了导电盐、pH值对电沉积Ga的影响。系统研究了Ga的沉积过程,发现Ga会逐渐向薄膜内部扩散,在Cu/In界面上与CuIn合金反应生成CuGa₂合金。针对Cu/In薄膜和Ga薄膜是活泼金属的特点,在溶液中加入三乙醇胺有效地保护了Cu/In薄膜和Ga金属薄膜不被氧化,并且提高了Ga沉积的电流效率。在Cu/In薄膜上制备出了均匀光亮的金属Ga薄膜。对电沉积出Cu-In-Ga预置层进行了硒化处理,得到了质量较好的Cu(In_1-xGa_x)Se₂(CIGS)薄膜,并制备了太阳电池。电池效率达到了9.42%。     

Cu2ZnSn(S,Se)4薄膜太阳电池研究进展

CdTe和Cu(In,Ga)(S,Se)₂ (CIGSSe)光吸收材料在新型化合物半导体太阳电池研究中占据着主导地位。尽管CdTe和CIGS太阳电池拥有较高的转换效率和先进的技术,但是仍存在着一些问题,如所用材料中的元素地壳丰度低或有毒,这阻碍了其未来的大规模应用。近年来,由于Cu₂ZnSn(S,Se)₄ (CZTSSe)薄膜太阳电池使用的元素地壳含量丰富且环境友好,逐渐成为了研究的热点。CZTSSe光吸收材料被认为能够取代CdTe和CIGS成为下一代光伏技术的潜力材料。基于此,本文将简单介绍CZTSSe材料的结构、性质和制备方法。重点阐述CZTSSe材料的组装技术和沉积方法的发展和优势,如基于真空的沉积方法和基于溶液的沉积方法,简述其优缺点。此外,本文对CZTSSe组装和CZTSSe纳米晶制备方法的最新研究进展也进行了总结。最后,对CZTSSe光伏技术的一些限制因素进行了分析,并对CZTSSe薄膜电池未来的研究前景进行了展望。     

两步法制备CIGS薄膜的工艺研究

本文主要研究了"预制层硒化法"制备铜铟镓硒(CIGS)薄膜的工艺。采用磁控溅射的方式制备In、Cu-Ga金属预制层,然后进行硒化(450℃)以及退火处理(550℃)。SEM结果表明,在室温下溅射沉积In薄膜,并且采用Mo/Cu-Ga/In/Cu-Ga/In的叠层顺序,可以获得平整致密的CIGS薄膜。XRD和SEM测量显示,以单质硒作为硒源,在450℃的硒化之后生成分离的CIS和CGS相,惰性氛围的高温退火可以使分离的CIS和CGS相互融合,形成均一化的CIGS四元化合物。在此基础上,最终完成的CIGS电池光电转换效率为7.5%。     

Cu(In,Ga)Se_2薄膜组成表面分析准确测量国际关键比对

中国计量科学研究院参加了国际关键比对K129,采用X射线光电子能谱仪(XPS)建立了测量薄膜太阳能电池材料铜铟镓硒(CIGS)薄膜组成和深度成分分布的有效方法。采用合适的条件,对CIGS薄膜进行深度剖析,提出并完善了一套XPS深度剖析数据处理方法(全计数法和相对灵敏度因子法),对薄膜组成进行了准确测量。结果表明,该方法的测量重复性良好,5次测量的相对标准偏差(RSD)均小于2%,测量扩展不确定度优于4%,与其他国家计量院的结果取得等效一致。对比研究了不同灵敏度因子来源(由参考样品获得、仪器数据库的3种来源)对CIGS薄膜组成测量结果的影响,结果表明,仪器厂商数据库自修正的灵敏度因子最接近于参考样品,可较好地对CIGS薄膜进行原子含量测量。该方法可推广用于表面分析设备深度剖析薄膜样品时定量计算薄膜成分,提高测量薄膜成分的准确度,为薄膜太阳能电池材料研发和产业化提供参考依据。     

(BCO)12与(CH)12稳定性的环张力分析

基于密度泛函理论的B3LYP方法, 对具有等瓣相似性的(BCO)12和(CH)12的10种异构体结构的稳定性进行了计算对比研究, 这10种异构体由三元、四元、五元和六元环组成. 环张力分析表明对羰基硼笼体系, 三元环起主要的稳定化作用, 而四元环是张力的主要来源, 对碳氢笼体系, 五元环起主要的稳定化作用. 电子差分密度表明羰基硼笼中的三元环与碳氢笼中的三元环有不同的电子结构, 导致了它们不同的张力表现. 核独立化学位移(NICS)分析表明, 尽管σ芳香性不是稳定性的决定因素, 但对笼的稳定性有一定的影响.     

激光刻蚀模板中电沉积特殊结构CIGS薄膜

本文利用激光刻蚀模板,在水溶液中电沉积制备金属铜薄膜,讨论了温度、电流、硫酸铜浓度对薄膜形貌的影响. 采用SEM对制备的铜薄膜进行表征,结果表明在沉积温度为30 ℃,沉积电流为4 A·dm^-2(表观工作电流密度),硫酸铜浓度在20 ~ 50 g·L^-1的水溶液中电沉积可以得到中空馒头状和开口碗状结构的铜薄膜. 利用激光刻蚀模板,在离子液体1-丁基-3-甲基咪唑三氟甲磺酸盐([BMI][TfO]) - 30 Vol%丙醇混合电解质中电沉积CIGS薄膜,研究了沉积电势、沉积时间对薄膜形貌的影响. SEM观察发现,在沉积电势为-1.8 V,沉积时间为1.5 h条件下电沉积可以得到近似柱状的簇状花束样的CIGS薄膜, 电沉积铜后再进一步电沉积CIGS,得到了均匀有序的鼓包柱状结构的Cu/CIGS复合薄膜. 用恒电势方波法对制备的薄膜真实表面积进行测试,计算结果表明,与无模板电沉积制备的CIGS薄膜相比,激光刻蚀模板法制备的Cu/CIGS复合薄膜的表面积提高了约8倍.     

螯合-螯合-中性萃取剂三元协萃UO~2(NO~3)~2的研究

自从Blake发现协萃效应以来,协萃效应已得到广泛深入的研究,并已有专著予以评述,但对三元协萃体系的研究工作并不多,特别是两种螯合萃取剂与一种中性萃取剂的三元协萃体系未见报道.本文对UO_2~(2+)针/0.5mol·dm~(-3)HNO_3/PMBP-TTA-TBP-CHCl_3三元协萃体系进行了研究,测定了协萃配合物(四元混合配合物)的组成,并求得它们的协萃平衡常数。     

CuInSe_2薄膜的电化学沉积及其形成机理

采用电化学沉积法制备了太阳电池用CuInSe2薄膜.利用循环伏安法(CV)、X射线能谱(EDS)和X射线衍射技术(XRD)研究了电沉积过程中CuInSe2的形成机理,并研究了制备工艺对膜层成分、形貌和物相结构的影响.研究结果表明,铟进入固相是通过In3+受Cu3Se2诱导作用欠电势还原或者In3+与H2Se反应这两种途径实现;先沉积的Cu3Se2与新生成的铟或铟硒化合物反应最后生成CuInSe2.在阴极电位为-0.58~-0.9 V(vs.SCE)时出现了不随电位变化的极限还原电流,在该电位范围内进行电沉积获得了化学计量组成稳定可控且相对致密平整的CuInSe2薄膜.电沉积的CuInSe2薄膜经真空退火处理后结晶质量得到明显改善.     

Structural investigation of the Cu2Se-In2Se3-Ga2Se3 phase diagram, X-ray photoemission and optical properties of the Cu1−z(In0.5Ga0.5)1+z/3Se2 compounds

Structures of compounds in the Cu₂Se-In₂Se₃-Ga₂Se₃ system have been investigated through X-ray diffraction. Single crystal structure studies for the so-called stoichiometric compounds Cu(In,Ga)Se₂ (CIGSe) confirm that the chalcopyrite structure (space group I4¯2d) is very flexible and can adapt itself to the substitution of Ga for In. On the other hand a structure modification is evidenced in the Cu_1−z(In_0.5Ga_0.5)_1+z/3Se₂ series when the copper vacancy ratio (z) increases; the chalcopyrite structure turns to a modified-stannite structure (I4¯2m) when z≥0.26. There is a continuous evolution of the structure from Cu_0.74(In_0.5Ga_0.5)_1.09Se₂ to Cu_0.25(In_0.5Ga_0.5)_1.25Se₂ ((i.e. Cu(In_0.5Ga_0.5)₅Se₈), including Cu_0.4(In_0.5Ga_0.5)_1.2Se₂ (i.e. Cu(In_0.5Ga_0.5)₃Se₅). From this single crystal structural investigation, it is definitively clear that no ordered vacancy compound exists in that series. X-ray photoemission spectroscopy study shows for the first time that the surface of powdered Cu_1−z(In_0.5Ga_0.5)_1+z/3Se₂ compounds (z≠0) is more copper-poor than the bulk. The same result has often been observed on CIGSe thin films material for photovoltaic applications. In addition, optical band gaps of these non-stoichiometric compounds increase from 1.2 to 1.4 eV when z varies from 0 to 0.75.     

不同形貌InxGa1-xN纳米材料的制备及发光性能研究

采用常压化学气相沉积法(APCVD),分别以金属镓(Ga),铟(In)和氨气(NH3)为镓源,铟源和氮源,在Si衬底上利用催化剂Au成功合成了不同形貌的InxGa1-xN纳米材料。利用X射线衍射仪(XRD)、扫描电子显微镜(SEM),X射线光电子能谱(XPS)和光致发光谱(PL)对比研究了InxGa1-xN(x=0,0.25)纳米材料在形貌,化学成分,晶体结构以及发光特性的变化。分析结果表明:当没有催化剂时,所生成的InxGa1-xN样品形貌由片状结构自组装成花状结构,而在催化剂Au的作用下,生成的InxGa1-xN纳米晶的形貌变为以纳米线为轴在其上生长的片状的"塔"状结构;虽然在催化剂Au的作用下生成的InxGa1-xN(x=0.25)形貌发生了很大变化,但晶体结构未发生改变,均为六方纤锌矿结构;PL分析结果显示InxGa1-xN纳米结构的发光性能随着In含量的增加,发光谱的强度增加且同时出现了蓝光区,在催化剂Au的作用下生成的InxGa1-xN的发光强度最强。最后对不同形貌InxGa1-xN其生长机理做简单分析。     

Synthesis of ternary and quaternary CuInxGa1−xSe2 (0 ≤ x ≤ 1) semiconductor nanocrystals

Semiconducting CuIn_xGa_1−xSe₂ nanocrystals (20–30 nm) have been synthesized over the whole composition range using a facile solution-based method. Depending on the synthesis conditions, the nanocrystals exhibit a cubic or spherical morphology with a narrow size distribution. The band gap increases with increasing Ga concentration and the values are close to those observed in the bulk.     

A crystallographic description of experimentally identified formation reactions of Cu(In,Ga)Se2

This work describes solid-state reactions for the formation of the chalcopyrite compounds CuInSe₂, CuGaSe₂ and Cu(In,Ga)Se₂ on atomic scale. The most important chalcopyrite formation reactions which were identified by the authors by real-time in situ X-ray diffraction in preceding experiments are (A) CuSe+InSe→CuInSe₂, (B) Cu₂Se+2 InSe+Se→2 CuInSe₂ and (C) Cu₂Se+In₂Se₃→2 CuInSe₂. During the selenistaion of a metallic precursor containing gallium a separate fourth reaction occurs: (D) Cu₂Se+Ga₂Se₃→2 CuGaSe₂. The quaternary compound is finally formed by interdiffusion of CuInSe₂ with CuGaSe₂ (E). These five reactions differ in their activation energy and reaction speed. We explain these differences qualitatively by analysing the involved crystal structures for each reaction. It turns out that all reactions involved in the formation of Cu(In,Ga)Se₂ are promoted by epitaxial relations, which facilitates the formation of polycrystalline thin films at temperatures much below those necessary for single crystal growth. Recommendations for the growth of larger grains of Cu(In,Ga)Se₂ containing fewer defects are given.     

Structural and optical properties of Ga2O3:In films deposited on MgO (1 0 0) substrates by MOCVD

Ga₂O₃:In films with different indium (In) content x [x=In/(Ga+In) atomic ratio] have been deposited on MgO (1 0 0) substrates by metalorganic chemical vapor deposition (MOCVD). Structural analyses revealed that the film deposited with actual In content (x′) of 0.09 was an epitaxial film and the films with x′=0.18 and 0.37 had mixed-phase structures of monoclinic Ga₂O₃ and bixbyite In₂O₃. The absolute average transmittance of the obtained films in the visible region exceeded 95%, and the band gap was in the range of 4.74-4.87 eV. Photoluminescence (PL) measurements were performed at room temperature, in which the visible luminescences were strong and could be seen by the naked eye. The strong emissions in the visible light region were proposed to originate from the gallium vacancies, oxygen deficiencies and other defects in these films.     

Ca0.8-2x(YbxTb0.1Na0.1+x)2xWO4近红外下转换荧光粉水热合成及发光性质

一种在近红外光谱(NIR)区域高效的量子剪裁现象已在Ca0.8-2x(Ybx Tb0.1Na0.1+x)2x WO4(x=0～0.2)荧光粉中得到证实,该量子剪裁通过吸收紫外线光子发射近红外光子,能量传递包括两个协同过程,分别是WO42-基团到Yb3+离子和WO42-基团到Tb3+离子再到Yb3+离子,Yb3+离子的掺杂浓度对荧光粉在可见光和近红外光谱的发光,荧光寿命和量子效率的影响已进行了详细的研究。经计算,量子效率最大达到135.7%。铽与镱共掺钨酸钙的近红外量子剪裁,通过吸收太阳光谱的1个紫外光子到2个1 000 nm光子(2倍光子数增加)的下转化机制实现高效率硅太阳能电池的途径。     

Transport Properties of Bi2−xInxSe3 Single Crystals

The paper reports on the temperature dependence of the electrical and thermal conductivity, Hall constant, and Seebeck coefficient of Bi_2−xIn_xSe₃ (x=0, 0.2, 0.4) single crystals measured over the temperature range from 2 to 300 K. One single-valley conduction band model is used to interpret relations among transport coefficients. The data analysis relies on the use of a mixed carrier scattering mechanism consisting of acoustic scattering and scattering on ionized impurities. The effect of In incorporation into the Bi₂Se₃ crystal lattice on the individual components of thermal conductivity is evaluated and discussed.     

Cr3+在不同基质Y3Ga5O12或Ga2O3中的荧光特性

以Ga_2O_3、Y_2O_3、Cr(NO_3)_3·9H_2O为原料,柠檬酸为配位剂,通过溶胶-凝胶高温固相合成法制备出Ga_(2-2x)O_3∶2xCr~(3+)(Ga_2O_3∶xCr)与Y_3Ga_(5-5x)O_(12)∶5xCr~(3+)(YGG∶xCr)2种多晶粉体(x=0.01,0.03,0.05,0.07)。并采用X射线衍射(XRD)、红外光谱(IR)、扫描电镜(SEM)、荧光光谱(PL)对样品的结构、组成、形貌和荧光性能进行测试分析。XRD和IR分析结果显示在900℃煅烧后Ga_2O_3∶xCr和YGG∶xCr两种样品均成相。SEM照片显示Ga_2O_3∶xCr样品形貌为柱形多面体,YGG∶xCr为短棒状。PL结果显示Cr~(3+)在Ga_2O_3和YGG两种基质中的最强荧光发射峰分别位于742和740 nm,均属于Cr~(3+)的~2E-~4A_2跃迁,对比发现Cr~(3+)在YGG基质中的荧光发射强度更强,在远红光区的荧光性能更好,能满足温室照明中植物光合作用的需求。     

Electrocatalytic Oxidation of Calcium Folinate on Carboxyl Graphene Modified CuxO/Cu Electrode

Carboxyl graphene modified Cu_xO/Cu electrode was fabricated. The bare copper electrode was firstly anodic polarized in 1.0 mol/L NaOH solution in order to get Cu_xO nanoparticles, then the carboxyl graphene (CG) was electrodeposited on the Cu_xO/Cu electrode by cyclic potential sweeping. The electrocatalytic oxidation behaviors of calcium folinate (CF) at the graphene modified Cu_xO/Cu electrode were investigated by cyclic voltammetry. A positive scan polarization reverse catalytic voltammetry was used to obtain the pure catalytic oxidation current. The graphene modified Cu_xO/Cu electrode was served as the electrochemical sensor of CF, a highly sensitivity of 22.0 μA·(μmol/μL)^-1cm^-2 was achieved, and the current response was linear with increasing CF concentration in the range of 2.0×10^-7 mol/L to 2.0×10^-5 mol/L, which crossed three orders of magnitude, and the detection limit was found 7.6×10^-8 mol/L (S/N=3). In addition, the proposed sensor was successfully applied in determination of CF in drug sample.