X-ray diffraction study of molybdenum diselenide to 35.9 GPa

In situ high-pressure angle dispersive synchrotron X-ray diffraction studies of molybdenum diselenide (MoSe₂) were carried out in a diamond-anvil cell to 35.9 GPa. No evidence of a phase transformation was observed in the pressure range. By fitting the pressure-volume data to the third-order Birch-Murnaghan equation of state, the bulk modulus, K_0T, was determined to be 45.7±0.3 GPa with its pressure derivative, K′_0T, being 11.6±0.1. It was found that the c-axis decreased linearly with pressure at a slope of −0.1593 when pressures were lower than 10 GPa. It showed different linear decrease with the slope of a −0.0236 at pressures higher than 10 GPa.     

Origin of the non-linear pressure effects in perovskite manganites: Buckling of Mn-O-Mn bonds and Jahn-Teller distortion of the MnO6 octahedra induced by pressure

High-pressure resistivity and X-ray diffraction measurements were conducted on La_0.85MnO_3−δ at ∼6 and ∼7 GPa, respectively. At low pressures the metal-insulator transition temperature (T_MI) increases linearly up to a critical pressure, P^* ∼3.4 GPa, followed by reduction in T_MI at higher pressure. Analysis of the bond distances and bond angles reveals that a bandwidth increase drives the increase in T_MI below P^*. The reduction in T_MI at higher pressures is found to result from Jahn-Teller distortions of the MnO₆ octahedra. The role of anharmonic interatomic potentials is discussed.     

High pressure behaviour of KHSO4 studied by electrical impedance spectroscopy

Measurements of the electrical conductivity were performed in KHSO₄ at pressures between 0.5 and 2.5 GPa and in the temperature range 120-350 °C by the use of the impedance spectroscopy. The temperatures of the α-β phase transition (T_Tr) and of the melting (T_m), determined from the Arrhenius plots ln(σT) vs. 1/T, increase with pressure up to 1.5 GPa having dT/dP∼+45 K/GPa. Above the pressure 1.5 GPa, the pressure dependencies of T_Tr and T_m are negative dT/dP∼−45 K/GPa. At pressures above 0.5 GPa, the reversible decomposition of KHSO₄ into K₃H(SO₄)₂+H₂SO₄ (and probably into K₅H₃(SO₄)₄+H₂SO₄) affects the electrical conductivity of KHSO₄, with the typical values of the protonic electrical conductivity, c. 10⁻¹ S/cm at 2.5 GPa.     

Effect of hydrostatic pressure on the Neel temperature and the electrical residual resistivity of α-manganese

The electrical resistivity of α-Mn was measured from 4.2 K to 290 K at pressures up to 8 kbar. The residual resistivity was found not to depend on pressure. The Néel temperature decreases linearly with pressure at a slope dT_N/dP = − 1.7 ± 0.2 K/kbar.     

Synchrotron X-ray diffraction and absorption studies of CeM2X2 (M=Cu, Ni and X=Si, Ge) at high pressure

The equations of state of CeCu₂Si₂ and CeCu₂Ge₂ to about 60 GPa, as well as that of CeNi₂Ge₂ to 22 GPa and the valence state of Ce in CeCu₂Ge₂ to 20 GPa have been studied at room temperature in a diamond-anvil cell using synchrotron radiation sources. In each compound, the ambient-pressure phase (tetragonal ThCr₂Si₂-type structure) persisted to the highest pressure studied. The unit cell volumes of CeNi₂Ge₂ at ∼5 GPa and CeCu₂Ge₂ at ∼7 GPa, respectively, approached that of CeCu₂Si₂ taken at ambient pressure. From the equation-of-state data, the bulk modulus was derived to be 112.0±5.1 GPa for CeCu₂Si₂, 125.6±4.3 GPa for CeCu₂Ge₂, and 178.4±14.3 GPa for CeNi₂Ge₂. The valence state of Ce in CeCu₂Ge₂ remained trivalent throughout the pressure range investigated.     

Investigation of the pressure dependence of band gaps for silver halides within a first-principles method

The pressure dependence of the direct and indirect band gaps in rocksalt silver halides has been studied using the full-potential linearized augmented plane wave method within the generalized gradient approximation for the exchange-correlation potential. It is found that indirect band gaps (L→X and L→Γ) exhibit different responses to application of pressure. Similar trends are found for the indirect band gaps of AgCl and AgBr while the trend in AgI (L→Γ) band gap is different. In all the compounds, the effect of pressure on the direct band gaps (Γ→Γ, X→X and L→L) show qualitatively similar results. The fundamental indirect band gap (L→Γ) pressure coefficients are −4.19 meV (GPa)⁻¹ and −3.81 meV (GPa)⁻¹ for AgCl and AgBr while for AgI (L→X) it is −61.50 meV (GPa)⁻¹. The band gap pressure coefficient as well as the volume deformation potential for the various band gaps of the compounds have also been investigated.     

Electrical conductivity of MgCO3 at high pressures and high temperatures

The electrical conductivity of polycrystalline magnesite (MgCO₃) was measured at 3-6 GPa at high temperatures using complex impedance spectroscopy in a multi-anvil high-pressure apparatus. The electrical conductivity increased with increasing pressure. The activation enthalpy calculated in the temperature range 650-1000 K also increased with increasing pressure. The effect of pressure was interpreted as being the activation volume in the Arrhenius equation, and the fitted data gave an activation energy and volume of 1.76±0.03 eV and −3.95±0.78 cm³/mole, respectively. The negative activation volume and relatively large activation energy observed in this study suggests that the hopping of large polarons is the dominant mechanism for the electrical conductivity over the pressure and temperature range investigated.     

Crystallization studies on AgI-Ag2O-MoO3 superionic system synthesized by melt quenching and mechanical milling

Crystallization in the melt-quenched (MQ) and mechanically milled (MM) superionic systems has been thoroughly investigated using differential scanning calorimetry, X-ray diffraction and electrical conductivity measurements. It is observed that the two systems obey different crystallization processes. The conventionally melt-quenched samples exhibit only one crystallization peak near 112 °C, whereas, the mechanochemically synthesized samples show two well-separated crystallization peaks at T_cl∼75-97 °C and T_c2∼132±2 °C. The higher value of electrical conductivity in the mechanochemically synthesized samples (∼10⁻² Ω⁻¹ cm⁻¹ at 300 K) than the melt-quenched samples is attributed to the higher value of disorder (entropy) in the former.     

Opto-electrical properties of Ti-doped In2O3 thin films grown by pulsed laser deposition

By ablating titanium containing In₂O₃ target with a KrF excimer laser, highly conducting and transparent films on quartz were obtained to investigate the effects of growth temperature and oxygen pressure on the structural, optical and electrical properties of these films. We find that the transparency of the films depends more on the growth temperature and less on the oxygen pressure. Electrical properties, however, are found to be sensitive to both the growth temperature and oxygen pressure. We report in this paper that a growth temperature of 500 °C and an oxygen pressure of 7.5 × 10⁻⁷ bar lead to titanium-doped indium oxide films which have high mobility (up to 199 cm² V⁻¹ s⁻¹), low resistivity (9.8 × 10⁻⁵ Ω cm), and relatively high transmittance (∼88%).     

Electrical property and phase transition of CdSe under high pressure

In situ electrical resistivity measurement of CdSe was performed under high pressure and moderate temperature using a diamond anvil cell equipped with a microcircuit. With the pressure increasing, a sharp drop in resistivity of over two orders of magnitude was observed at about 2.6 GPa, it was caused by the transition to the rock-salt CdSe. After that, the resistivity decreased linearly with pressure. However, in different pressure range, the decreasing degree was obviously different. This attributed to the different electron structures. By fitting to the curve of pressure dependence of resistivity in different pressure range, the relationship of the band gap to pressure was given and the metallization pressure was speculated to be in the range of 70-100 GPa. The temperature dependence of resistivity showed that in the experimental temperature and pressure range the resistivity had a positive temperature coefficient.     

Thermoelectric properties of sol-gel derived cobaltite Bi2Ca2.4Co2Oy

Layered misfit cobaltite Bi₂Ca_2.4Co₂O_y has been synthesized by a sol-gel method. This compound exhibits large thermoelectric (TE) power (S_300 K∼170 μV K⁻¹), low resistivity (ρ_300 K∼42 mΩ cm) and relatively small thermal conductivity (κ_300 K∼2.8 W K⁻¹ m⁻¹) at room temperature. Furthermore, the resistivity of this compound displays a metallic behavior above T^?∼150 K with a semiconducting behavior below this temperature. This abnormal behavior in resistivity is analogous to those observed in Sr and Ba based misfit cobaltites. The observed features of the TE have been discussed based on the narrow band model.     

Chemical spray pyrolysis deposition and characterization of p-type CuCr1−xMgxO2 transparent oxide semiconductor thin films

A chemical spray pyrolysis technique for deposition of p-type Mg-doped CuCrO₂ transparent oxide semiconductor thin films using metaloorganic precursors is described. As-deposited films contain mixed spinel CuCr₂O₄ and delafossite CuCrO₂ structural phases. Reduction in spinel CuCr₂O₄ fraction and formation of highly crystalline films with single phase delafossite CuCrO₂ structure is realized by annealing at temperatures ?700 °C in argon. A mechanism of synthesis of CuCrO₂ films involving precursor decomposition, oxidation and reaction between constituent oxides in the spray deposition process is presented. Post-annealed CuCr_0.93Mg_0.07O₂ thin films show high (?80%) visible transmittance and sharp absorption at band gap energy with direct and indirect optical band gaps 3.11 and 2.58 eV, respectively. Lower (∼450 °C) substrate temperature formed films are amorphous and yield lower direct (2.96 eV) and indirect (2.23 eV) band gaps after crystallization. Electrical conductivity of CuCr_0.93 Mg_0.07O₂ thin films ranged 0.6-1 S cm⁻¹ and hole concentration ∼2×10¹⁹ cm⁻³ determined from Seebeck analysis. Temperature dependence of conductivity exhibit activation energies ∼0.11 eV in 300-470 K and ∼0.23 eV in ?470 K region ascribed to activated conduction and grain boundary trap assisted conduction, respectively. Heterojunction diodes of the structure Au/n-(ZnO)/p-(CuCr_0.93Mg_0.07O₂)/SnO₂ (TCO) were fabricated which show potential for transparent wide band gap junction device.     

Photoluminescence properties of Sm-doped BaBr2 under hydrostatic pressure

Photoluminescence spectra of Sm²⁺-doped BaBr₂ have been measured under hydrostatic pressures up to 17 GPa at room temperature. In the low pressure range a red-shift of the broad 5d-4f transition of −145 cm⁻¹/GPa is observed. From 5 to 8 GPa a phase mixture of the initial orthorhombic phase and the high-pressure monoclinic phase gives rise to two 5d-4f bands, which are strongly overlapping. Above 8 GPa the crystal is completely transformed to its high-pressure phase where two different Sm²⁺ sites exist, but only one broad 5d-4f transition is detected. It exhibits a red-shift of −36 cm⁻¹/GPa. In addition, the line shifts of the ⁵D₀→⁷F_J (J=0, 1, 2) transitions are investigated. Linear shifts of −19 cm⁻¹/GPa for J=0, 2 and of −13 cm⁻¹/GPa for J=1 are observed in the pressure range from 0 to 5 GPa.     

Structural and electrical properties of AlN films deposited using reactive RF magnetron sputtering for solar concentrator application

AlN is an interesting material with some excellent properties like high hardness (>11 GPa), high temperature stability (>2400 °C), good electrical resistivity (>10¹⁰ Ω cm), and good thermal conductivity (>100 W/m K). These properties make it useful in the field of photo voltaic systems. Cooling of solar cells in solar concentrator application is of major concern because high temperature reduces their efficiency. In the present work we deposited AlN coating, with and without an Al interlayer, on various substrates like Si, quartz, and copper using RF magnetron sputtering. Deposition conditions such as Al interlayer (deposition time = 5-20 min), Ar:N₂ ratio (N₂% = 0-75%) and substrate bias (0 and −50 V) were changed in order to study their effect on coating properties. Coating surface roughness increased from 0.05 to 0.15 μm with increase in Al interlayer thickness. The coating thickness decreased from 4.4 to 3.1 μm with increase in N₂ gas % and films grew in (0 0 2) orientation. Films deposited on copper using Al interlayer showed good electrical resistance of ∼10¹³ Ω. Films deposited on copper without Al interlayer showed presence of voids or micro cracks and poor electrical properties. AlN films deposited at −50 V bias show cracking and delamination.     

Resistance anomaly and structural disorder in NiSi2 under high pressure

Results of X-ray diffraction, electrical resistance, thermoelectric power measurements and electronic band structure calculations on NiSi₂ under high pressure are reported. The thermoelectric power (TEP) changes sign near 0.5 GPa (from +30 to −20 μV/K). As the pressure is increased, the value of TEP increases further in magnitude and near 7 GPa it becomes −50 μV/K. The pressure vs. resistance curve measured up to 30 GPa using diamond anvil (DAC)-based technique exhibits a broad hump near 12 GPa and exhibits hysteresis on pressure release. The ADXRD patterns up to 42 GPa show a gradual irreversible loss of long-range order in NiSi₂ with the diffraction lines progressively broadening under pressure. The FWHM of the diffraction lines show a rapid increase in the half-widths close to 0.5 GPa and also near 12 GPa. The computed band structure at a compression (without any disorder) corresponding to 12 GPa, exhibits an electronic topological transition (ETT). The rapid increase in disorder above 12 GPa implies that the ETT may be facilitating the structural disorder. It is suggested that the pressure drives the material through a region of entropic and energetic barriers and induces disorder in the material.     

Pressure dependence of the optical-absorption edge of AlN and graphite-type BN

Effect of pressure on the band gaps on AlN and graphite-type BN (g-BN) has been studied up to 2.7 GPa at room temperature by measuring the optical-absorption edge of single crystals of each substance pressurized in a sapphire-anvil cell. The direct band gap of AlN shifted towards higher energy at a rate of 49±1 meV/GPa, whereas in g-BN the pressure dependence of the band gap was −36±1 meV/GPa. The results are compared with existing first-principles calculations.     

Nanomechanical characterizations of InGaN thin films

In_xGa_1−xN thin films with In concentration ranging from 25 to 34 at.% were deposited on sapphire substrate by metal-organic chemical vapor deposition (MOCVD). Crystalline structure and surface morphology of the deposited films were studied by using X-ray diffraction (XRD) and atomic force microscopy (AFM). Hardness, Young's modulus and creep resistance were measured using a nanoindenter. Among the deposited films, In_0.25Ga_0.75N film exhibits a larger grain size and a higher surface roughness. Results indicate that hardness decreases slightly with increasing In concentration in the In_xGa_1−xN films ranged from 16.6 ± 1.1 to 16.1 ± 0.7 GPa and, Young's modulus for the In_0.25Ga_0.75N, In_0.3Ga_0.7N and In_0.34Ga_0.66N films are 375.8 ± 23.1, 322.4 ± 13.5 and 373.9 ± 28.6 GPa, respectively. In addition, the time-dependent nanoindentation creep experiments are presented in this article.     

High mobility W-doped In2O3 thin films: Effect of growth temperature and oxygen pressure on structural, electrical and optical properties

Highly conducting and transparent thin films of tungsten (W)-doped indium oxide were obtained using pulsed laser deposition to study the effect of growth temperature and oxygen pressure on structural, optical and electrical properties. The transparency of the films is seen to largely depend on the growth temperature. The electrical properties, however, are found to depend strongly on both the growth temperature and the oxygen pressure. High mobility (up to 358 cm² V⁻¹ s⁻¹), low resistivity (1.1 × 10⁻⁴ Ω cm), and relatively high transmittance (∼90%) tungsten-doped indium oxide films have been prepared at a growth temperature of 500 °C and an oxygen pressure of 1 × 10⁻⁶ bar.     

Structural, electronic and thermodynamic properties of cubic Zn3N2 under high pressure from first-principles calculations

The structural, electronic and thermodynamic properties of cubic Zn₃N₂ under hydrostatic pressure up to 80 GPa are investigated using the local density approximation method with pseudopotentials of the ab initio norm-conserving full separable Troullier-Martin scheme in the frame of density functional theory. The structural parameters obtained at ambient pressure are in agreement with experimental data and other theoretical results. The change of bond lengths of two different types of Zn-N bond with pressure suggests that the tetrahedral Zn-N bond is slightly less compressible than the octahedral bond. By fitting the calculated band gap, the first and second order pressure coefficients for the direct band gap ofthe Zn₃N₂ were determined to be 1.18×10⁻² eV/GPa and −2.4×10⁻⁴ eV/(GPa)², respectively. Based on the Mulliken population analysis, Zn₃N₂ was found to have a higher covalent character with increasing pressure. As temperature increases, heat capacity, enthalpy, product of temperature and entropy increase, whereas the Debye temperature and free energy decrease. The present study leads to a better understanding of how Zn₃N₂ materials respond to compression.     

Ionic to electronic dominant conductivity in Al2(WO4)3 at high pressure and high temperature

Electrical conduction and crystal structure of Al₂(WO₄)₃ at 400 °C have been studied as a function of pressure up to 5.5 GPa using impedance methods and synchrotron radiation X-ray diffraction, respectively. AC impedance spectroscopy and DC polarization measurements reveal an ionic to electronic dominant transition in electrical conductivity at a pressure as low as 0.9 GPa. Conductivity increases with pressure and reaches a maximum at 4.0 GPa, where the conductivity value is 5 orders of magnitude greater than the 1 atm value. Upon decompression, the conductivity retains the maximum value until the sample is cooled at 0.5 GPa. The high pressure-temperature X-ray diffraction results show that the lattice parameters decrease as pressure increases and the crystal structure undergoes an orthorhombic to tetragonal-like transformation at a pressure ∼3.0 GPa. The change of conduction mechanism from ionic to electronic may be explained by means of pressure-induced valence change of W⁶⁺→W⁵⁺, which results in electron transfer between W⁵⁺-W⁶⁺ sites at high pressure.