Molecular static model of CuInSe2 crystal: Energy properties of some structural defects

A molecular static model of a CuInSe₂ crystal is constructed, and the energies of formation of isolated defects are calculated. An analysis of the interaction between defects shows that, for a high defect concentration (exceeding 1%), the energies of interaction between defects can considerably exceed the values obtained in the continuous medium approximation. It is found that the role of interaction between defects in quantum-chemistry calculations using the model of supercells (periodic defect) is considerably underestimated.     

FS and FS(OH) defect centers at the MgO(1 0 0) surface: cluster and periodic calculations

We present a model of a new paramagnetic defect center which results from the interaction of atomic hydrogen with the MgO(1 0 0) surface. DFT calculations have been performed using periodic supercells and embedded cluster models where long-range polarization effects are included explicitly. The H atom promotes the creation of an oxygen vacancy (F center) by formation of the F_S⁺(OH⁻) defect where an hydroxyl group is adsorbed near an electron trapped in an oxygen vacancy. This new center has some characteristics similar to those of the classical F_S⁺ centers but a smaller formation energy; furthermore, being globally neutral, it can be treated also with supercell methods.     

Photon energy dependence of SW effect in a-Si:H films

In order to explore the creation process of Staebler-Wronski (SW) defect in a-Si: H films. We investigated the effect of monochromatic light exposure with different photon energies: 2.54, 1.96, 1.17 and 0.95 eV. The experimental results show that threshold energy for SW defect creation is around 1.17 eV.     

First-principles energy band calculation for undoped and S-doped TiO2 with anatase structure

The electronic structure of S-doped TiO₂ with an optimized anatase structure was calculated within the framework of the density functional theory (DFT). For the calculation we built four kinds of supercells; type-A and B supercells consist of 12 and 48 atoms and a centered Ti atom is substituted for an S atom, while type-C and D supercells consist of 12 and 48 atoms and a centered O atom is substituted for an S atom. The supercells (type-B and D) were employed to adjust the S-concentration in TiO₂ to an experimental value of a few %. The changes of the lattice parameters are not significant in the type-A and B supercells. The phase transition from the tetragonal to the orthorhombic occurs in the type-C and D supercells. In the small supercell (type-A), S-related states are located in the range of −1.6 to 0 eV, and the S-states are band-like. In contrast, in the large supercell (type-B), S-related states appeared at about 0.9 eV above the top of the valence band, and the S-states are atomic-like. The localization of the S-related states is remarkable in the type-B supercell. In the type-D supercell, the S-related states were merged with the top of the valence band, and as a result the band-gap energy is narrowed by 0.7 eV. Despite a low S-concentration (3%) in the type-D supercell, the S-related states are somewhat band-like.     

Study of the atomic and electronic structures of amorphous silicon nitride and defects in it

The structure of amorphous silicon nitride obtained by cooling from a melt has been simulated by Car-Parinello molecular dynamics. Several types of Si-Si defect coordination have been revealed. It has been found that, in addition to normal Si-Si bonds, numerous double Si-Si bonds (Si-Si-Si defects) are present in the amorphous structure.     

Effect of metal and carbon vacancies on the band structure of hexagonal tungsten carbide

The band structure of hexagonal tungsten carbide (β-WC) containing vacancies in metal and carbon sublattices is investigated within the first-principles full-potential linear muffin-tin orbital (LMTO) approach for a model of 16-atom supercells. Specific features of the formation of “vacancy” states are discussed, and the formation energies of defects and their charge states are estimated. The results obtained are compared with previous calculations and available experimental data.     

Effects of Stone-Wales Defect Symmetry on the Electronic Structure and Transport Properties of Narrow Armchair Graphene Nanoribbon

We report a first principles calculation to investigate the electron transport properties of defected armchair graphene nanoribbon (AGNR) influenced by Stone-Wales (SW) defect. The SW defect is found to be able to effectively influence the electronic structure of the defected AGNRs, and their electron transport behaviors can exhibit prominent differences depending on the symmetry of the nanostructured morphology. Moreover, our simulations have revealed that the introducing of the SW defect could be favorable for the electron transport of the defective AGNR. Our investigation has confirmed the possibility of tuning the electron transport of graphene nanoribbon by introducing a topological defect, which could be helpful to extending the field of applications for graphene nanoribbon-based nanodevices.     

Theoretical prediction of ion conductivity in solid state HfO2

A theoretical prediction of ion conductivity for solid state HfO2 is carried out in analogy to ZrO2 based on the density functional calculation. Geometric and electronic structures of pure bulks exhibit similarity for the two materials. Negative formation enthalpy and negative vacancy formation energy are found for YSH (yttria-stabilized hafnia) and YSZ (yttria- stabilized zirconia), suggesting the stability of both materials. Low activation energies (below 0.7 eV) of diffusion are found in both materials, and YSH’s is a little higher than that of YSZ. In addition, for both HfO2 and ZrO2 , the supercells with native oxygen vacancies are also studied. The so-called defect states are observed in the supercells with neutral and +1 charge native vacancy but not in the +2 charge one. It can give an explanation to the relatively lower activation energies of yttria-doped oxides and +2 charge vacancy supercells. A brief discussion is presented to explain the different YSH ion conductivities in the experiment and obtained by us, and we attribute this to the different ion vibrations at different temperatures.     

First-principles study of electronic and elastic properties of Stone–Wales defective zigzag carbon nanotubes

The interaction and coupling between the electrical, mechanical properties and formation energy for SW defective (10,0) carbon nanotube is studied in density functional theory. The investigated configurations include the axial and circumferential orientations for single defect as well as four distribution types for double ones. The more stable defective configurations, namely, SW-I configurations for single SW defective carbon nanotube and II–II-(2) and I–I ones for double SW defective tubes are related to high symmetry distribution of the defects. Moreover, we found that the σ^?–π^* hybridization induced by curvature effect causes the semiconductor to metal transition for double axial SW defects case. Young's modulus reduction of SW defective carbon nanotube with respect to defect-free one is less than 8%. The energy bands and Young's moduli of double SW defective tubes are mostly affected by the defect distribution and concentration but insensitive to the circumferential distance between the double defects.     

Raman spectroscopy of pseudomorphic Si0.989C0.011/Si superlattices

Raman spectroscopy is used here to study pseudomorphic Si_0.989C_0.011/Si superlattices grown by molecular beam epitaxy. The high crystalline quality of the samples was tested by a high resolution X-ray diffraction experiment. The lineshape of the LO Si-Si peak shows an asymmetry, which correlates with the increase of the alloy layer width. The Raman spectra show three additional peaks in the high energy side above the LO mode of Si. One of them is due to the local vibration of the C substitutional atoms, and the other two can be attributed to the formation of short range order with C atoms occupying second and third nearest-neighbor places. On the low energy side of the LO Si-Si mode, we have observed two other peaks associated with the relaxation of the Si atoms around the substitutional C. Although the X-ray experiments show clear evidence of superperiodicity, no indication of the superlattice formation could be observed in the parallel polarized Raman spectra, where the folded acoustic modes are allowed.     

Exploring the simultaneous existence of Stone-Wales and carbon ad-dimer defects in the zigzag single-walled carbon nanotubes

We have applied density functional calculations to investigate simultaneous existence of Stone–Wales (SW) and carbon ad-dimer (CD) defects in the zigzag (n, 0) n=5, 6, 7, 8, 9, and 10 SWCNTs, with an extensive search by considering two different orientations of defects. According to our results, the adsorption of a carbon dimer on a hexagonal ring of SWCNTs is easier than the rotation of a C–C bond trough the SW rearrangement. Moreover, the formation of a carbon dimer on the exterior sidewalls of an SW defective SWCNT or the rotation of a C–C bond of a CD defective SWCNT is more favorable than those on the perfect ones. Defect formation energy shows a strong dependence on the both SWCNT radius and defect orientation. The reactivity of SW–CD defective SWCNTs through chemisorption of hydrogen atoms on the central bonds of defect sites shows the thermodynamically lower preference of additions for the CD defective sites in comparison to SW defective sites. Histograms of the ¹³C NMR chemical shifts of SW–CD defective SWCNTs exhibit individual signals for defect sites, which can be attributed to azupyrene- and pentalelene-like structures for SW and CD defect sites, respectively.     

锆铌合金的特殊准随机结构模型的分子动力学研究

锆合金(如:锆铌(Zr-Nb)合金)的辐照损伤问题是裂变堆结构材料和燃料棒包壳材料设计的关键,而深入理解辐照损伤的物理机制,往往需借助于原子尺度的计算模拟,如:分子动力学和第一性原理等.针对随机置换固溶体合金的模拟,首先需构建能反映合金元素随机分布特征的大尺寸超胞,然而第一性原理计算量大,不宜使用过大(如≥200原子)超胞.通常第一性原理计算使用的是特殊准随机(SQS)超胞,SQS超胞可部分反映合金元素的随机分布特性,但对于特定组分只对应一种构型,这种模型是否能反映真实随机置换固溶体中多种局域构型的统计平均还有待进一步研究验证.分子动力学可在更大的尺度上进行计算模拟,能够通过随机取代(RSS)模型研究更多的合金构型,因此,本文基于RSS超胞模型及SQS扩展超胞模型,运用分子动力学方法对Zr-Nb合金进行了研究.首先通过构型误差分析确定了能真实反映固溶体合金性能统计性的RSS超胞的临界尺寸;然后计算比较了Zr-Nb合金SQS扩展超胞和一系列RSS超胞的晶格常数、形成能和能量—体积关系.研究表明,利用SQS超胞模拟得到的固溶体的晶格常数、形成能和能量体积曲线与一系列RSS超胞的对应统计值接近,因而SQS超胞可用于研究随机置换固溶体合金.     

Defects in silicon: the role of vibrational entropy

Vibrational free energies are calculated from first-principles in the same Si periodic supercells routinely used to perform defect calculations. The specific heat, vibrational entropy, and zero-point energy obtained in defect-free cells are very close to the measured values. The importance of the vibrational part of the free energy is studied in the case of two defect problems: the relative energies of the H₂ and H₂^∗ dimers and the binding energy of a copper pair. In both cases, the vibrational entropy term causes total energy differences to change by about 0.2 eV between 0 and 800 K. We also comment on the rotational entropy in the case of H₂ and the configurational entropy in the case of the Cu pair. These examples illustrate the importance of extending first-principles calculations of defects in semiconductors to include free energy contributions.     

Effects of the edge shape and the width on the structural and electronic properties of silicene nanoribbons

Under the generalized gradient approximation (GGA), the structural and electronic properties are studied for H-terminated silicene nanoribbons (SiNRs) with either zigzag edge (ZSiNRs) or armchair edge (ASiNRs) by using the first-principles projector-augmented wave potential within the density function theory (DFT) framework. The results show that the length of the Si-H bond is always 1.50 Å, but the edge Si-Si bonds are shorter than the inner ones with identical orientation, implying a contraction relaxation of edge Si atoms. An edge state appears at the Fermi level E_F in broader ZSiNRs, but does not appear in all ASiNRs due to their dimer Si-Si bond at edge. With increasing width of ASiNRs, the direct band gaps exhibit not only an oscillation behavior, but also a periodic feature of Δ_3n > Δ_3n+1 > Δ_3n+2 for a certain integer n. The charge density contours analysis shows that the Si-H bond is an ionic bond due to a relative larger electronegativity of H atom. However, all kinds of the Si-Si bonds display a typical covalent bonding feature, although their strength depends on not only the bond orientation but also the bond position. That is, the larger deviation of the Si-Si bond orientation from the nanoribbon axis as well as the closer of the Si-Si bond to the nanoribbon edge, the stronger strength of the Si-Si bond. Besides the contraction of the nanoribbon is mainly in its width direction especially near edge, the addition contribution from the terminated H atoms may be the other reason.     

Quantum-Chemical Study of Structural Stone–Wales Defect in Functionalized Fullerene C<Subscript>20</Subscript>

The formation energy and the Stone—Wales defect structure in fullerene C₂₀ doped with one of functional groups H, Cl, F, or OH are calculated within the density functional theory. It is shown that the functional group type and binding site have a significant effect on the defect formation energy. It is found that the C₂₀F compound is significantly more stable than other considered systems, i.e., C₂₀Cl, C₂₀H, and C₂₀OH.     

Photoluminescence of very thin oxide/a-Si:H structures passivated in HCN solutions

In this contribution we present new experimental facts concerning evolution of the a-Si:H photoluminescence (PL) spectra, recorded at 6 K, induced by both formation of very thin oxide layer in the surface region of the semiconductor by nitric acid solutions and passivation of a-Si:H defect states using HCN aqueous solutions. a-Si:H layers were deposited on both n-type of crystalline Si and the Corning glass. The analysis of the set of PL spectra - their interpretation - indicates that two explanations of blue shifts of the PL band maxima are possible. The first is connected with formation of several structurally different a-Si:H-based phases inside the amorphous matrix and/or with the Street model of recombination of localized electron-hole pairs coupled with the optical phonon in Si.Additionally, as it was stated, the wet chemical oxidation of 1 μm thick a-Si:H layers deposited on the glass can induce formation of hydrogenated micro-sized a-Si grains. Passivation procedure performed in the HCN solution can transform an equivalent part of the a-Si:H semiconductor to a-Si:CN. If the multiphase model is accepted for interpretation of the PL spectra then the following main PL transitions related with different phases were observed: 1.20, 1.25, 1.38, 1.41, 1.44, and 1.48 eV.     

Adsorption of Al on the Si(0 0 1) surface

The first-principles calculations have been presented to study the adsorption of aluminum (Al) on the Si(0 0 1)(2×1) surface. We have investigated the optimized geometries and electronic structures of the adatom-substrate system. The adsorption energy of the system has been calculated. The most stable adsorption sites were consequently determined to be HH site and T3+T4. It is shown that the Si-Si dimer is asymmetric on the reconstructed bare surface and become symmetric upon Al adsorption. In addition, the bond length of Si-Si was found to be considerably elongated in the adsorption system. It is found that the work function change obtained in our work is different from other previous results on the adsorption of alkali metals on the Si(0 0 1) surface. In order to investigate the relative stability of phases at different coverages, the surface formation energy of the adsorption system was calculated. To shed light on the nature of the Al-Si bond and the character of silicon surface, the density of states (DOS) and difference charge density of the system were evaluated.     

Effects of Stone–Wales defect upon adsorption of formaldehyde on graphene sheet with or without Al dopant: A first principle study

The adsorption mechanisms of formaldehyde (H₂CO) on modified graphene, including aluminum doping, Stone–Wales (SW) defects, and a combination of these two, were investigated via density functional theory (DFT). It was found that the graphene with SW defect is more sensitive than that of perfect graphene for detecting H₂CO molecules. Compared with Al-doped graphene/H₂CO complex, the binding energy for Al-doped SW defect complex can be enhanced by the introduction of a SW defect. The large values of binding energy and net charge transfer for this complex indicate a strong chemisorption and a larger affinity with H₂CO for the modified graphene. Furthermore, the density of states (DOS) of the complex shows that the effect of defect–dopant combination on adsorption mechanisms is due to the orbital hybridization between the Al atom and its adjacent C atoms. In addition, it can be expected that adsorption of H₂CO on the surface of Al-doped SW defect may occur easily, and the Al-doped SW graphene is more suitable for H₂CO gas detection.     

Comparison between various finite-size supercell correction schemes for charged defect calculations

We present a comparison of the most common finite-size supercell correction schemes for charged defects in density functional theory calculations. Considered schemes include those proposed by Makov and Payne (MP), Lany and Zunger (LZ), and Freysoldt, Neugebauer, and Van de Walle (FNV). The role of the potential alignment is also assessed. Supercells of various sizes are considered and the corrected formation energies are compared to the values obtained by extrapolation to large supercells. For defects with localized charge distributions, we generally find that the FNV scheme slightly improves upon the LZ one, while the MP scheme generally overcorrects except for point-charge-like defects. We also encountered more complex situations in which the extrapolated values do not coincide. Inspection of the defect electronic structure indicates that this occurs when the defect Kohn–Sham states are degenerate with band-edge states of the host.     

Raman spectroscopy of strained GeSi alloys deposited on Ge substrates

The Raman scattering method has been successfully used to investigate the properties of GeSi alloys deposited on Ge substrates in this paper. The effect of Si composition and strain in the GeSi alloy on the Raman shifts of Ge-Ge, Ge-Si and Si-Si phonon modes is studied. The relationship between them have been derived by the assumption that the Raman shifts is nearly linear with Si composition and strain in the GeSi alloys. The experimental data show reasonable agreement with the fits.