Photoluminescence and time-resolved photoluminescence of star-shaped ZnO nanostructures

Optical properties of star-shaped ZnO nanostructures were studied. The temperature-dependent photoluminescence (PL) was examined up to fourth-order longitudinal optical (LO) phonon assisted emissions of free excitons and confirmed that the nature of the room temperature PL in ZnO is 1-LO phonon assisted emission of free excitons. Low threshold ultraviolet stimulated emissions (SE) were obtained for our powder samples at room temperature. Picosecond time-resolved PL measurements detected a bi-exponential decay behavior which is strongly dependent on the excitation intensity: the slow decay term decreased faster than the fast decay term as the excitation intensity increased and the emission decays were dominated by the fast one. We also found that the emission decays decreased super-linearly before the appearance of the SE. This behavior may be used to deduce the threshold of SE or lasing.     

Temperature dependence of the photoluminescence and phosphorescence time decay of magnesia-stabilized zirconia

Temperature dependence of photoluminescence (PL) spectra and time decay ranging from 90 to 330 K are investigated in magnesia-stabilized zirconia single crystals. The emission PL spectra can be decomposed into two bands. The prominent one is centered in the blue-green region of the spectrum whereas the secondary one is centered in the yellow-orange region. The temperature dependence of these bands are analyzed in terms of the so-called configuration coordinate model. The Huang-Rhys parameter for the prominent band is found near 40 and the effective phonon at about 0.030 eV. Thermal quenching energy is determined to be 0.24 eV from the decreasing part of the I(T) curve. Luminescent decays were satisfactorily fitted by two exponentials over the whole temperature range investigated. Total lifetime temperature dependence can be accounted for by assuming a radiative decay from two metastable levels with a separation energy of 0.073 eV. Results are discussed on the basis of the major defects, oxygen vacancies and complex defects.     

Luminescence and Tb-Ce-Eu ion energy transfer in single-crystalline films of Tb3Al5O12:Ce,Eu garnet

The paper is devoted to investigation of the processes of excitation energy transfer between the host cations (Tb³⁺ ions) and the activators (Ce³⁺ and Eu³⁺ ions) in single-crystalline films of Tb₃Al₅O₁₂:Ce,Eu (TbAG:Ce,Eu) garnet which is considered as a promising luminescent material for the conversion of LED's radiation. The cascade process of excitation energy transfer is shown to be realized in TbAG:Ce,Eu: (i) from Tb³⁺ ions to Ce³⁺ and Eu³⁺ ions; (ii) from Ce³⁺ ions to Eu³⁺ ions by means of dipole-dipole interaction and through Tb³⁺ ion sublattice.     

Luminescence characteristics of Pb centres in undoped and Ce-doped Lu3Al5O12 single-crystalline films and Pb→Ce energy transfer processes

At 4.2-350 K, the steady-state and time-resolved emission and excitation spectra and luminescence decay kinetics were studied under excitation in the 2.5-15 eV energy range for the undoped and Ce³⁺-doped Lu₃Al₅O₁₂ (LuAG) single-crystalline films grown by liquid phase epitaxy method from the PbO-based flux. The spectral bands arising from the single Pb²⁺-based centres were identified. The processes of energy transfer from the host lattice to Pb²⁺ and Ce³⁺ ions and from Pb²⁺ to Ce³⁺ ions were investigated. Competition between Pb²⁺ and Ce³⁺ ions in the processes of energy transfer from the LuAG crystal lattice was evidenced especially in the exciton absorption region. Due to overlap of the 3.61 eV emission band of Pb²⁺ centres with the 3.6 eV absorption band of Ce³⁺ centres, an effective nonradiative energy transfer from Pb²⁺ ions to Ce³⁺ ions takes place, resulting in the appearance of slower component in the luminescence decay kinetics of Ce³⁺ centres and decrease of the Ce³⁺-related luminescence intensity.     

Effect of Anode Floating Voltage and its Applications in Characterizing Silicon Drift Detectors

Anode floating voltage is predicted and investigated for silicon drift detectors （SDDs） with an active area of 5 mm2 fabricated by a double-side parallel technology. It is demonstrated that the anode floating voltage increases with the increasing inner ring voltage, and is almost unchanged with the external ring voltage. The anode floating voltage will not be affected by the back electrode biased voltage until it reaches the full-depleted voltage （-50 V） of the SDD. Theoretical analysis and experimental results show that the anode floating voltage is equal to the sum of the inner ring voltage and the built-in potential between the p＋ inner ring and the n＋ anode. A fast checking method before detector encapsulation is proposed by employing the anode floating voltage along with checking the leakage current, potential distribution and drift properties.     

Etching of mercuric iodide in cation iodide solutions

The surface properties of mercuric iodide after etching in various cation iodide solutions have been investigated in terms of dissolution rate, morphology, electrical properties and reaction with water vapour. No significant differences have been observed in the etching rates. However, dissolution of HgI₂ in NH₄I, NaI, KI or RbI leaves the surface more or less covered with a residual iodo mercurate compound whose electrical properties and stability with regard to humidity may noticeably influence the behaviour of mercuric iodide devices. The smallest effect has been observed for etching in NaI.     

Evidence for fast decay dynamics of the photoluminescence from Ge nanocrystals embedded in SiO2

We have investigated the origin of room temperature photoluminescence from ion-beam synthesized Ge nanocrystals (NCs) embedded in SiO₂ using steady state and time-resolved photoluminescence (PL) measurements. Ge NCs of diameter 4-13 nm were grown embedded in a thermally grown SiO₂ layer by Ge⁺ ion implantation and subsequent annealing. Steady state PL spectra show a peak at ∼2.1 eV originating from Ge NCs and another peak at ∼2.3 eV arising from ion-beam induced defects in the SiO₂ matrix. Time-resolved PL studies reveal double exponential decay dynamics on the nanoseconds time scale. The faster component of the decay with a time constant τ₁∼3.1 ns is attributed to the nonradiative lifetime, since the time constant reduces with increasing defect density. The slower component with time constant τ₂∼10 ns is attributed to radiative recombination at the Ge NCs. Our results are in close agreement with the theoretically predicted radiative lifetime for small Ge NCs.     

Temperature-dependent photoluminescence and Raman spectra from porous GeSi/Si heterostructures

Porous GeSi/Si heterostructures were fabricated by laterally anodization in HF-based solutions. Photoluminescence spectra have been investigated as a function of temperature (77–300 K), showing that porous GeSi has a quite different temperature dependence from that of porous silicon. Raman spectra indicated that the sample structure changed after anodization. Phonon participation and direct recombination of excitons are proposed to be responsible in the light emission processes of porous GeSi and Si, respectively.     

Reduction effect on the optical properties of Sm doped in SrB4O7 and SrB6O10 crystals

Reduction effects on the optical properties of Sm²⁺ ions doped in SrB₄O₇ and SrB₆O₁₀ crystals were studied by measurements of luminescence intensity decay as a function of time, X-ray irradiation and laser power effects on the photoluminescence. The fluorescence intensity of Sm²⁺ doped in SrB₄O₇ and SrB₆O₁₀ crystals decreased upon excitation at 488 nm of Ar⁺ laser and this so-called photo-bleaching effect was highly dependent on the sample preparation conditions. The fluorescence intensity of Sm²⁺ doped in SrB₄O₇ decreased about 13%, while it decreased about 55% in the SrB₆O₁₀ crystal irradiated with X-ray for 10 h. Differences of photo-beaching effect and other optical properties of Sm²⁺ doped in SrB₄O₇ and SrB₆O₁₀ are discussed.     

Europium ion as a probe for binding sites to carrageenans

Carrageenans, sulfated polysaccharides extracted from red algae, present a coil-helix transition and helix aggregation dependence on the type and concentration of counterions. In this study, we focus attention on a mixed valence counterion system: Eu³⁺/Na⁺ or K⁺ with different gel-forming carrageenans: kappa, iota, and kappa-2. Results of stationary and time-dependent luminescence showed to be a suitable tool to probe ion binding to both the negatively charged sulfate group and the hydroxyl groups present in the biopolymer. For lower europium ion concentrations, a single longer decay emission lifetime was detected, which was attributed to the binding of europium ion to the carrageenan sulfate groups. An additional decay ascribed to europium binding to hydroxyl groups was observed above a threshold concentration, and this decay was dependent on the carrageenan charge density. Symmetry of the europium ion microenvironment was estimated by the ratio between the intensities of its emission bands, which has been shown to depend on the concentration of europium ions and on the specificity of the monovalent counterion bound to the carrageenan.     

Low-temperature wet chemical synthesis and photoluminescence properties of YVO4: Bi, Eu nanophosphors

YVO₄: Bi³⁺, Eu³⁺nanophosphors are prepared by the citrate-assisted low-temperature wet chemical synthesis. When the colloidal solution is aged at 60 °C, the crystalline YVO₄: Bi³⁺, Eu³⁺ nanorods are formed from the amorphous gel precursors, as confirmed by transmission electron microscopy and X-ray diffractometry (XRD). YVO₄: Bi³⁺, Eu³⁺ nanophosphors emit red through energy transfer from Bi³⁺ to Eu³⁺ under near-UV-light excitation. The emission intensity increases with increasing the fraction of the crystalline phase during aging. The excitation peak corresponding to Bi³⁺-V⁵⁺ charge transfer relative to those of O²⁻-V⁵⁺ and O²⁻-Eu³⁺ charge transfers gradually becomes strong until the completion of the crystallization, although the contents of individual Bi³⁺ and Eu³⁺ ions incorporated into YVO₄ keep constant. When the aging is continued after the completion of the crystallization, the content of incorporated Bi³⁺ gradually increases, and hence the emission intensity decreases as a result of the energy migration among Bi³⁺ ions. These results suggest that in addition to the fraction of the crystalline phase and the contents of incorporated Bi³⁺ and Eu³⁺ ions, the local chemical states around Bi³⁺ play significant roles in photoluminescence properties.     

The effect of the excitation and of the temperature on the photoluminescence circular polarization of AlInAs/AlGaAs quantum dots

In this paper, we present a study of photoluminescence (PL) from AlInAs/AlGaAs quantum dots (QDs) structures grown by molecular beam epitaxy. Specifically, we describe the effects of the temperature and of the excitation density on the photoluminescence circular polarization. We have found that the circular polarization degree depends on temperature. On the other hand, the study of the excitation density dependent circular polarization PL degree shows that the last increases in the case of the sample of weak dot density. However, in the case of large dot density, it is almost constant in the excitation density range from 0.116 W cm⁻² to 9 W cm⁻².     

Effects of the homogeneous Bi doping process on photoluminescence properties of YVO4:Bi,Eu nanophosphor

YVO₄:Bi³⁺,Eu³⁺ nanophosphors at a high Bi³⁺ concentration of 15 at% are synthesized from a Bi³⁺ source, nitrates of yttrium and europium(III), and sodium orthovanadate(V) by a low-temperature aqueous precipitation in the presence of citrate ions. When an ethylene glycol solution of bismuth(III) nitrate is used as a Bi³⁺ source, YVO₄:Bi³⁺,Eu³⁺ nanophosphors of ∼20 nm in size crystallize during aging at 85 °C without any by-products where the contents of Bi³⁺ and Eu³⁺ incorporated into crystalline YVO₄ are close to the respective nominal contents, as confirmed by transmission electron microscopy, X-ray diffractometry and X-ray fluorescent analysis. These nanophosphors show red emission corresponding to the f-f transition of Eu³⁺ under the excitation of Bi³⁺-V⁵⁺ charge transfer. When aging is continued after the completion of the crystallization, the photoluminescence intensity of nanophosphors reaches the constant value. This is the improved behavior in comparison to our previous work, where the photoluminescence intensity decreases after the prolonged aging because of the inhomogeneous doping of Bi³⁺ ions, and hence the concentration quenching.     

On photoluminescence in HgGa2S4

In this paper, we investigate the kinetics of photoluminescence in excited crystals of HgGa₂S₄ which have recently been proposed for implementing tunable luminescent devices. From photoluminescence experiments, performed at various temperatures and excitation powers, it appears that two kinds of radiative recombination processes take place during crystal excitation. These originate two bands in emission spectra which were resolved by means of a fitting procedure. The dependencies of these bands on temperature and excitation power density are explained by means of a specific kinetic model. A broad band, peaking at about 1.8 eV, is ascribed to electron-hole tunnel recombinations occurring in associated donor-acceptor pairs, according to a Prener-Williams scheme. The second narrow band, peaking at about 2.3 eV, is ascribed to electron-hole recombinations occurring in centres presenting short () and long-life () excited states. At room temperature, owing to thermally activated relaxation from short- to long-life states, these centres saturate under relatively low excitation powers. The tunability of photoluminescence is a consequence of competition between monomolecular and bimolecular recombination processes.     

Tunneling recombination luminescence under excitation of PbWO4:Mo crystals in the defect-related absorption region

Time-resolved emission and excitation spectra and luminescence decay kinetics were studied at 150-300 K for the green emission of PbWO₄:Mo crystals. It was found that the slow (μs-ms) decay component observed under excitation in the defect-related absorption region (around 3.8-3.9 eV) arises from the G(II) emission which appears at the tunneling recombination of optically created electron and hole centers. The study of the emission decay kinetics at different temperatures and excitation intensities allowed concluding that both the monomolecular and the bimolecular tunneling recombination process can be stimulated in the mentioned energy range. The monomolecular process takes place in the isolated spatially correlated pairs of electron and hole centers produced without release of electrons into the conduction band. The bimolecular process takes place in the pairs of randomly distributed centers created at the trapping of free electrons from the conduction band. The formation of electron centers under irradiation in the defect-related absorption region was investigated by the electron spin resonance (ESR) and thermally stimulated luminescence (TSL) methods. The possibility of various photo-thermally stimulated defects creation processes, which take place with and without release of free electrons into the conduction band, was confirmed.     

The effect of Y co-doping on the persistent up-conversion luminescence of the ZrO2:Yb,Er nanomaterials

The effect of the defects due to the charge compensation obtained with the yttrium co-doping to the ZrO₂:Yb³⁺,Er³⁺ up-converting phosphors was studied. The materials were prepared with the combustion method. The materials purity was analyzed with the FT-IR spectroscopy. The crystal structure was studied with the X-ray powder diffraction and the crystallite sizes were estimated with the Scherrer formula. Up-conversion luminescence was excited at room temperature with an IR-laser at 970 nm. The up-conversion luminescence spectra showed red (650-685 nm) and green emission (520-560 nm) due to the ⁴F_9/2→⁴I_15/2 and (²H_11/2,⁴S_3/2)→⁴I_15/2 transitions of Er³⁺, respectively. Persistent up-conversion luminescence was observed both in the Yb³⁺,Er³⁺ and Y³⁺,Yb³⁺,Er³⁺ doped materials.     

Fluorescence spectra of Rhodamine 6G for high fluence excitation laser radiation

Fluorescence spectral changes of Rhodamine 6G in ethanol and glycerol solutions and deposited as a film on a silica surface have been studied using a wide range of pumping field fluence at 532 nm at room temperature. Blue shift of the fluorescence spectra and fluorescence quenching of the dye molecule in solution are observed at high excitation fluence values. Such effects are not reported for the film sample. The effects are interpreted as the result of population redistribution in the solute-solvent molecular system induced by the high fluence field and the fluence dependence of the radiationless decay mechanism.