Interactions of Cr2S3 with GeS2 and Cu2GeS3

The interactions in the GeS₂-Cr₂S₃ and Cu₂GeS₃-Cr₂S₃ sections were studied by differential thermal analysis and X-ray powder diffraction. The GeS₂-Cr₂S₃ section was shown to be quasi-binary, with a degenerate eutectic; no ternary compound was formed. In the Cu₂GeS₃-Cr₂S₃ section, a quaternary phase of variable composition having a homogeneity range of 69–75 mol % Cr₂S₃ crystallized in the cubic system. The samples of this composition are spin glasses with freezing temperatures of 20–25 K.     

Dependence of the lone pair of bismuth on coordination environment and pressure: An ab initio study on Cu4Bi5S10 and Bi2S3

DFT calculations have been carried out for Cu₄Bi₅S₁₀ and Bi₂S₃ to provide an analysis of the relation between electronic structure, lone electron pairs and the local geometry. The effect of pressure is considered in Bi₂S₃ and the results are compared to published experimental data. Bi³⁺ in Cu₄Bi₅S₁₀ is found at both symmetrically and asymmetrically coordinated sites, whereas the coordination environments of Bi in Bi₂S₃ are asymmetric at room conditions and get more regular with increasing pressure. The charge density maps of the asymmetric sites show the lone pairs as lobes of non-shared charge. These lobes are related to an effective Bi s-Bi p hybridization resulting from coupling to S p orbitals, supporting the modern view of the origin of the stereochemically active lone pair. No effective Bi s-p hybridization is seen for the symmetric site in Cu₄Bi₅S₁₀, whereas Bi s-p hybridization coexists with a much reduced lone pair in Bi₂S₃ at high pressure.     

室温下制备Cu7S4和Ag2S的球形空心纳米粒子

以Cu₂O和Ag₂O纳米粒子为前驱体,利用Kirkendall效应,在室温条件下制备出Cu₇S₄和Ag₂S的球形空心纳米粒子。用X-射线衍射(XRD)、透射电镜(TEM)、扫描电镜(SEM)等测试手段对产物进行了表征。结果表明,粒子的空心化程度取决于反应物的物质的量之比;空心粒子的形貌与前驱体粒子的形貌很相似。研究了这种反应的机理,并对这两种氧化物发生这类反应的难易程度作了理论探讨。     

Mg二次电池正极材料Cu2Mo6S8的合成与表征

采用CuS.H2O、MoS2、Mo为原料,用熔盐法(KCl为熔盐)合成了谢弗雷尔相的Cu2Mo6S8正极材料,并用XRD,SEM,循环伏安测试,充放电测试对材料的结构和电化学性能进行研究。XRD结果表明本Cu2Mo6S8正极材料属于R3空间群,具有良好的晶型。电化学测试表明,当材料在电压0.2～2 V范围内进行充放电时,其放电比容量在90 mAh.g-1左右,循环稳定性和可逆性均良好。该材料的充放电曲线中在1.2 V和1.9 V分别有还原峰,0.7 V和1.0 V分别有氧化峰,与伏安曲线相对应。     

Investigation of vortex dynamics close to Bc2 in Cu2Mo6S8 quasi epitaxial thin films

The Ginzburg number of superconducting Chevrel phases M_xMo₆S₈ with small coherence length (10⁻³ to 10−5) is intermediate between those obtained for conventional low T_c materials (10⁻⁸) and those of high T_c (10⁻¹) indicating that these phases may display features in the dynamics of the vortices similar to those observed in high T_c superconductors. In this work we present a detailed study of I–V measurements close to the B_c2 line carried out on quasi epitaxial thin films of Cu₂Mo₆S₈. The non-linear I–V curves show a scaling behaviour making possible to determine a transition temperature between an unpinned vortex state and a vortex glass state. However, the temperature range of the unpinned vortex state is much wider than expected.     

Phase equilibria and thermodynamics of the double oxide phase Cu3TiO4

Phase equilibria in the system CuCu₂OTiO₂ were investigated in the temperature range of 1160–1270 K by means of thermogravimetry and measurements of the oxygen partial pressure. The tie lines on the isothermal phase diagram run from the phase Cu₃TiO₄ to CuO, Cu₂O, and TiO₂. The existence of Cu₃TiO₅ and Cu₂TiO₃ could not be confirmed in this temperature range. The phase “Cu₃TiO₄” is only stable above about 1140 K and its composition fluctuates between about Cu₃TiO_4.3 and Cu₃TiO_3.9. The formation of Cu₃TiO_4.3 according to the reaction 1.6 CuO + 0.7 Cu₂O + TiO₂ = Cu₃TiO_4.3 is endothermic: (1160 < T < 1270 K) ΔH° = (7600 ± 450 J-mole^?1; ΔS° = (6.7 ± 0.4) J·K^?1·mole^?1. The standard Gibbs free energy, enthalpy, and entropy of formation of Cu₃TiO_4.3 at 1200 K are ΔG°_f = ?101.39 kJ, ΔH°_f = ?1115.84 kJ, and S°_f = 466.76 J·K^?1. Rather similar values were found for Cu₃TiO_3.9.     

Electrical resistivity of cubanite: CuFe2S3

The electrical resistivity of a single crystal of cubanite, CuFe₂S₃, has been determined from 4.2 to 340 K. Definite semiconducting behavior is observed, showing that the rapid electron exchange between Fe²⁺ and Fe³⁺ in Cu¹⁺Fe²⁺Fe³⁺S₃ is confined to the edge-shared pairs of iron-sulfur tetrahedra.     

Molten salt synthesis (MSS) of Cu2Mo6S8—New way for large-scale production of Chevrel phases

The Chevrel phase (CP), Mo₆S₈, was found to be an excellent cathode material for rechargeable magnesium batteries. Mo₆S₈ is obtained by a leaching process of Cu₂Mo₆S₈, which removes the copper. A new method of Cu₂Mo₆S₈ production was developed. In contrast to the well-known solid-state synthesis of CP, the method is based on the reaction in a molten salt media (KCl). A fast kinetics of this reaction allows using less active, but more convenient precursors (sulfides instead of sulfur), decreasing temperature and synthesis duration, as well as operation in the inert atmosphere instead of dynamic evacuated systems. It was shown that the composition and the electrochemical behavior of the products obtained by MSS and by the solid-state synthesis are identical. Thus, the molten salt method is extremely attractive for the large-scale production of the active materials for Mg batteries.     

Unusual Layered Transition-Metal Oxysulfides: Sr2Cu2MO2S2(M=Mn, Zn)

Layered manganese and zinc oxysulfides, Sr₂Cu₂MnO₂S₂and Sr₂Cu₂ZnO₂S₂, have been prepared for the first time. They crystallize in an unusual intergrowth structure with alternating square planarMO₂(M=Mn,Zn) sheets and anti-PbO-type Cu₂S₂layers. The S atom at the apical sites has a weak bond to atoms Mn or Zn. Both compounds are semiconducting Sr₂Cu₂MnO₂S₂exhibits an antiferromagnetic ordering at about 29K.     

Phase diagrams of sections in the EuS-Cu2S-Nd2S3 system

Phase equilibria in the EuS-Cu₂S-Nd₂S₃ system were studied in an isothermal (970 K) section and NdCuS₂-EuS and Cu₂S-EuNdCuS₃ polythermal sections. The complex sulfide EuNdCuS₃ has an orthorhombic crystal lattice (space group Pnma; a = 1.10438(2) nm, b = 0.40660(1) nm, c = 1.14149(4) nm), is isostructural to BaLaCuS₃, and melts incongruently at 1470 K: EuNdCuS₃ (0.50 EuS; 0.50 NdCuS₂) ai 0.18 EuS ss (0.88 EuS; 0.12 NdCuS₂) + 0.82 L (0.415 EuS; 0.585 NdCuS₂); ΔH = 17.8 kJ/mol. Within the range 0.5 mol % EuS, EuNdCuS₃-based solid solutions were not found. At 970 K, the tie lines pass from the compound EuNdCuS₃ to Cu₂S, EuS, NdCuS₂, and EuNd₂S₄ phases and lie between the NdCuS₂ phase and solid solutions (ss) of γ-Nd₂S₃ with EuNd₂S₄. Eutectics are formed between the compounds NdCuS₂ and EuNdCuS₃ at 32.0 mol % EuS T = 1318 K and between the compounds Cu₂S and EuNdCuS₃ at 20.5 mol % EuNdCuS₃ and T = 1142 K. Five main subordinate triangles were identified in the system.     

Crystal structures of CsFe2S3 and RbFe2S3: synthetic analogs of rasvumite KFe2S3

The isostructural alkali thioferrate compounds CsFe₂S₃, RbFe₂S₃ and KFe₂S₃ have been synthesized by reacting Fe and S with their corresponding AFeS₂ (A=K, Rb, Cs) precursors. The crystal structures of these and binary compounds of intermediate composition were determined by Rietveld analysis of laboratory powder X-ray diffraction patterns. All of the synthesized compounds adopt the space group Cmcm (#63), Z=4 with: a=9.5193(8) Å, b=11.5826(10) Å, c=5.4820(4) Å for CsFe₂S₃; a=9.2202(7) Å, b=11.2429(9) Å, c=5.4450(3) Å for RbFe₂S₃; and a=9.0415(13) Å, b=11.0298(17) Å, c=5.4177(6) Å for KFe₂S₃. These mixed valence alkali thioferrates show regular changes in cell dimensions, AS₁₀ (A=K, Rb, Cs) polyhedron volumes, polyhedron distortion parameters, and calculated oxidation state of Fe with respect to increasing size of the alkali element cation. The calculated empirical oxidation state of iron varies from +2.618 (CsFe₂S₃), through +2.666 (RbFe₂S₃) to +2.77 (KFe₂S₃).     

Photoelectronic properties of Cu3PS4 and Cu3PS3Se single crystals

Single crystals of Cu₃PS₄ and Cu₃PS₃Se grown by chemical vapor transport were shown to be diamagnetic p-type semiconductors. Electrical measurements showed room temperature resistivities ranging from 1 to 5 ohm-cm and carrier concentrations of 10¹⁷ cm^?3. Both materials were shown to be active as cathodes for the photoelectrolysis of water. Spectral response measurements show that substitution of selenium for sulfur lowers the optical band gap from 2.38(5) eV for Cu₃PS₄ to 2.06(4) eV for Cu₃PS₃Se.     

Tl2S-Sb2S3-Bi2S3 quasi-ternary system

The Tl₂S-Sb₂S₃-Bi₂S₃ quasi-ternary system (system A) was studied using DTA, X- ray powder diffraction, microstructure examination, and microhardness measurements. TlSbS₂-Tl₄Bi₂S₅(TlBiS₂, Bi₂S₃), Sb₂S₃-TlBiS₂, Tl₃SbS₃-TlBiS₂(Bi₂S₃), and [TlSb_0.5Bi_0.5S₂]-Tl₂S isopleths; isothermal sections at 500 K; and liquidus surface projection of system A were constructed. Characteristic features of the title system are extensive fields of solid solutions extended along the TlSbS₂-TlBiS₂ quasi-binary section and a continuous solubility belt 1–2 mol % wide extended along the Sb₂S₃-Bi₂S₃ binary subsystem. Primary separation fields of phases and the types and coordinates of invariant and monovariant equilibria in system A were determined.     

介孔调控Co9S8/Ni3S2复合电极材料及电催化析氢性能

利用快速凝固结合化学脱铝模板法制备前驱体纳米多孔Ni-Co合金,再经气相沉积硫和热氢还原制备纳米多孔Co₉S₈/Ni₃S₂复合电极材料。研究表明,通过气相沉积,硫原子与Ni-Co合金原位生成CoS₂/NiS₂复合相,再经过热氢还原后,形成硫原子比例较低的Co₉S₈/Ni₃S₂复合相。该热氢还原过程不仅提高了Co₉S₈/Ni₃S₂各元素周围的电子密度,而且在其表面调制出有介孔结构的异质界面,进而提高其电子传输能力并增大活性比表面积。相比于其他同条件下制备的Ni、Co硫化物,Co₉S₈/Ni₃S₂拥有更佳的析氢反应（HER）活性,在50 mA·cm^-2的电流密度下,Co₉S₈/Ni₃S₂的HER过电位为234 mV,Tafel斜率为106 mV·dec^-1,经稳定性测试后,电压变化仅为14 mV。     

Preparation and photocatalytic activity of Sb2S3/Bi2S3 doped TiO2 from complex precursor via gel-hydrothermal treatment

Sb₂S₃/Bi₂S₃ doped TiO₂ were prepared with the coordination compounds [M(S₂CNEt)₃] (M=Sb, Bi; S₂CNEt=pyrrolidinedithiocarbamate) as precursors via gel-hydrothermal techniques. The doped TiO₂ were characterized by XRD, SEM, XPS and UV-vis diffuse reflectance means. The photocatalyst based on doped TiO₂ for photodecolorization of 4-nitrophenol (4-NP) was examined. The optimal Bi₂S₃/Sb₂S₃ content, pH and different doped techniques have been investigated. Photocatalytic tests reveal that M₂S₃ doped TiO₂ via the gel-hydrothermal route performs better photocatalytic activity for photodegradation reaction of 4-nitrophenol (4-NP).     

SnSbBiS4-SnS and SnSbBiS4-Sn2Sb6S11 sections of the SnS-Sb2S3-Bi2S3 ternary system

SnSbBiS₄-SnS and SnSbBiS₄-Sn₂Sb₆S₁₁ sections were studied by physicochemical methods (DTA, X-ray powder diffraction, microstructure observation, and microhardness measurements). These sections were found to be eutectic quasi-binary sections of the SnS-Sb₂S₃-Bi₂S₃ ternary system. Solid solution regions based on the initial components were found on either side of the sections. Alloys in the solid solution region are p-type semiconductors.     

Vaporization chemistry and thermodynamics in the CdGa2S4-Ga2S3 system

The chemistry and thermodynamics of vaporization of CdGa₂S₄(s), CdGa₈S₁₃(s), and Ga₂S₃(s) were studied by computer-automated, simultaneous Knudsen-effusion and torsion-effusion, vapor pressure measurements in the temperature range 967–1280 K. The vaporization was incongruent with loss of Cd(g) + 1/2 S₂(g) and production of CdGa₈S₁₃(s), a previously unknown compound, in equilibrium with CdGa₂S₄(s), until the solid became CdGa₈S₁₃ only. Then, incongruent vaporization continued with production of Ga₂S₃(s) until the solid was Ga₂S₃ only. The latter vaporized congruently. The ΔH°(298 K) of combination of one mole of CdS(s) with one mole of Ga₂S₃(s) to give CdGa₂S₄(s) was ?22.6 ± 0.9 kJ mole^?1. The 2H2(298 K) of combination of one mole of CdS(s) with four moles of Ga₂S₃(s) to give CdGa₈S₁₃(s) was ?25.5 ± 1.1 kJ mole^?1. The 2H2(298K) of CdGa₈S₁₃(s) with respect to disproportionation into CdGa₂S₄(s) and 3 Ga₂S₃(s) was ?2.8 ± 0.6 kJ mole^?1. CdGa₈S₁₃(s) was not observed at room temperature. The 2H2(298 K) of vaporization of the residual Ga₂S₃(s) was 663.4 ± 0.8 kJ mole^?1, which compared well with a value of 661.4 ± 0.3 kJ mole^?1 already available from the literature. Implications of small variations in stoichiometry of compounds in this study were observed and are discussed.     

Crystal structures of V3S4 and V5S8

Crystal structures of the ordered phases of V₃S₄ and V₅S₈ were refined with single crystal data. Both are monoclinic. Chemical compositions, space groups and lattice constants are as follows: VS_1.47, $\text{I2}\text{m}$ (No. 12), a = 5.831(1), b = 3.267(1), c = 11.317(2)Å, β = 91.78(1)° and VS_1.64, $\text{F}\text{2}\text{m}$ (No. 12), a = 11.396(11), b = 6.645(7), c = 11.293(4), Å, β = 91.45(6)°. In both structures, short metal-metal bonds were found between the layers as well as within them. In comparison with the structure of Fe₇S₈, the stability of NiAs-type structure was discussed based on the detailed metal-sulfur distances.     

Synthetic Cu0.507(5)Pb8.73(9)Sb8.15(8)I1.6S20.0(2) nanowires

Nanowires of an iodine containing Pb-Sb-sulfosalt have been synthesized by chemical vapor transport. Their structure was studied using high-resolution transmission electron microscopy and X-ray powder diffraction. The lattice parameters show values equal to a=4.9801(4) nm, b=0.41132(8) nm (with two-fold superstructure), c=2.1989(1) nm and β=99.918(6)°. These parameters and the results of a multislice simulation are in good agreement with the mineral pillaite, Cu_0.10Pb_9.16Sb_9.84S_22.94Cl_1.06O_0.5 (space group C2/m, a=4.949(1) nm, b=0.41259(8) nm, c=2.1828(4) nm, and β=99.62(3)°). Microprobe and EDX analyses yielded a chemical composition of Cu_0.507(5)Pb_8.73(9)Sb_8.15(8)I_1.6S_20.0(2) which is close to natural pillaite but contains no oxygen and iodine instead of chlorine. The structure of the investigated material is based on chains of M-S polyhedra (M=Pb or Sb) typical for the architecture of sulfosalts implying iodine atoms in trigonal prismatic coordination with Pb atoms from the M-S polyhedra of neighboring chains. The [010] superstructure of the specimen was found to be unstable under electron beam irradiation with a rapid decrease of the b lattice parameter from 0.8 to 0.4 nm within 5 min.     

Mixed crystals in the system Cu2MnGexSn1−xS4: Phase analytical investigations and inspection of tetrahedra volumes

Cu₂MnGeS₄ crystallizes orthorhombic in a wurtzite superstructure type while Cu₂MnSnS₄ crystallizes in a tetragonal sphalerite superstructure type. Lattice constants and thermal analyses of the solid solution series Cu₂MnGe_xSn_1−xS₄ are presented. A two-phase region is found from Cu₂MnGe_0.3Sn_0.7S₄ to Cu₂MnGe_0.5Sn_0.5S₄. The cell volume of the mixed crystals increases with increasing Sn content. The melting points increase smoothly with increasing Ge content to x=0.5 and then steeply for higher Ge contents. The single crystal X-ray structure analysis of Cu₂MnGe_0.55Sn_0.45S₄ is presented. The refinement converges to R=0.0270 and wR₂=0.0586, Z is 2. The volumes of the tetrahedra [MS₄] (M=Cu, Mn, Ge, Sn) are calculated. From these volumes the differences in size of the tetrahedra are derived and compared with the corresponding differences in the end members of the solid solution series. It turns out that the resulting structure type in these materials depends on the volume differences of the constituting tetrahedra [MS₄].