Synthesis and crystal structures of Nd6Pt13In22, Sm6Pt12.30In22.70, and Gd6Pt12.48In22.52

The rare earth-platinum-indides Nd₆Pt₁₃In₂₂, Sm₆Pt_12.30In_22.70, and Gd₆Pt_12.48In_22.52 were synthesized from the elements by arc-melting of the components. Single crystals were grown using special annealing sequences. The three indides were investigated by X-ray powder and single crystal diffraction: Tb₆Pt₁₂In₂₃ type, C2/m, Z=2, a=2811.9(6), b=441.60(9), , β=112.10(3)°, wR₂=0.0629, 3645 F² values, 126 variables for Nd₆Pt₁₃In₂₂, a=2821.9(6), b=443.06(9), , β=112.39(3)°, wR₂=0.0543, 3679 F² values, 127 variables for Sm₆Pt_12.30In_22.70, and a=2818.5(6), b=439.90(9), , β=112.29(3)°, wR₂=0.0778, 3938 F² values, 127 variables for Gd₆Pt_12.48In_22.52. Most platinum atoms in these structures have a distorted trigonal prismatic coordination by rare earth metal and indium atoms. Together, the platinum and indium atoms build up a complex three-dimensional [Pt_12+xIn_23−x] polyanionic network in which the rare earth metal atoms fill distorted pentagonal and hexagonal channels. The 2c Wyckoff site in these structures plays a peculiar role. This site is occupied by indium in the prototype Tb₆Pt₁₂In₂₃, while platinum atoms fill the 2c site in Nd₆Pt₁₃In₂₂, leading to a linear Pt₃ chain with Pt-Pt distances of 275 pm. The crystals with samarium and gadolinium as rare earth metal component show mixed Pt/In occupancies.     

New rare earth metal-rich indides RE14Ni3In3 (RE=Sc, Y, Gd-Tm, Lu)—synthesis and crystal chemistry

The rare earth-nickel-indides RE₁₄Ni₃In₃ (RE=Sc, Y, Gd-Tm, Lu) were synthesized from the elements by arc-melting and subsequent annealing. The compounds were investigated on the basis of X-ray powder and single crystal data: Lu₁₄Co₂In₃ type, P4₂/nmc, Z=4, a=888.1(1), c=2134.7(4), wR2=0.0653, 1381 F² values, 63 variables for Sc_13.89Ni_3.66In_2.45; a=961.2(1), c=2316.2(5), wR2=0.0633, 1741 F² values, 64 variables for Y_13.84Ni_3.19In_2.97; a=965.3(1), c=2330.5(5), wR2=0.0620, 1765 F² values, 63 variables for Gd₁₄Ni_3.29In_2.71; a=956.8(1), c=2298.4(5), wR2=0.0829, 1707 F² values, 64 variables for Tb_13.82Ni_3.36In_2.82; a=951.7(1), c=2289.0(5), wR2=0.0838, 1794 F² values, 64 variables for Dy_13.60Ni_3.34In_3.06; a=948.53(7), c=2270.6(1), wR2=0.1137, 1191 F² values, 64 variables for Ho_13.35Ni_3.17In_3.48; a=943.5(1), c=2269.1(5), wR2=0.0552, 1646 F² values, 64 variables for Er_13.53Ni_3.14In_3.33; a=938.42(7), c=2250.8(1), wR2=0.1051, 1611 F² values, 64 variables for Tm_13.47Ni_3.28In_3.25; a=937.3(1), c=2249.6(5), wR2=0.0692, 1604 F² values, 64 variables for Tm_13.80Ni_3.49In_2.71; and a=933.4(1), c=2263.0(5), wR2=0.0709, 1603 F² values, 64 variables for Lu_13.94Ni_3.07In_2.99. The RE₁₄Ni₃In₃ indides show significant Ni/In mixing on the 4c In1 site. Except the gadolinium compound, the RE₁₄Ni₃In₃ intermetallics also reveal RE/In mixing on the 4c RE1 site, leading to the refined compositions. Due to the high rare earth metal content, the seven crystallographically independent RE sites have between 9 and 10 nearest RE neighbors. The RE₁₄Ni₃In₃ structures can be described as a complex intergrowth of rare earth-based polyhedra. Both nickel sites have a distorted trigonal-prismatic rare earth coordination. An interesting feature is the In2-In2 dumb-bell at an In2-In2 distance of 304 pm (for Gd₁₄Ni_3.29In_2.71). The crystal chemical peculiarities of the RE₁₄Ni₃In₃ indides are briefly discussed.     

On the crystal chemistry of Tm2Ni1.896(4)In, Tm2.22(2)Ni1.81(1)In0.78(2), Tm4.83(3)Ni2In1.17(3), and Er5Ni2In

The rare earth-nickel-indides Tm₂Ni_1.896(4)In, Tm_2.22(2)Ni_1.81(1)In_0.78(2), Tm_4.83(3)Ni₂In_1.17(3), and Er₅Ni₂In were synthesized from the elements by arc-melting and subsequent annealing for the latter three compounds. Three indides were investigated by X-ray powder and single crystal diffraction: Mo₂FeB₂ type, P4/mbm, Z=2, a=731.08(4), c=358.80(3) pm, wR₂=0.0201, 178 F² values, 13 variables for Tm₂Ni_1.896(4)In, a=734.37(7), c=358.6(1) pm, wR₂=0.0539, 262 F² values, 14 variables for Tm_2.22(2)Ni_1.81(1)In_0.78(2), and Mo₅SiB₂ type, I4/mcm, a=751.0(2), c=1317.1(3) pm, wR₂=0.0751, 317 F² values, 17 variables for Tm_4.83(3)Ni₂In_1.17(3). X-ray powder data for Er₅Ni₂In revealed a=754.6(2) and c=1323.3(5) pm. The Mo₂FeB₂ type structures of Tm₂Ni_1.896(4)In and Tm_2.22(2)Ni_1.81(1)In_0.78(2) are intergrowths of slightly distorted CsCl and AlB₂ related slabs, however, with different crystal chemical features. The nickel sites within the AlB₂ slabs are not fully occupied in both indides. Additionally In/Tm mixing is possible at the center of the CsCl slab, as is evident from the structure refinement of Tm_2.22(2)Ni_1.81(1)In_0.78(2). The Mo₅SiB₂ type structures of Tm_4.83(3)Ni₂In_1.17(3) and Er₅Ni₂In can be considered as an intergrowth of distorted CuAl₂ and U₃Si₂ related slabs in an ABA′B′ stacking sequence along the c-axis. Again, one thulium site shows Tm/In mixing. The U₃Si₂ related slab has great structural similarities with the Mo₂FeB₂ type structure of Tm₂Ni_1.896(4)In and Tm_2.22(2)Ni_1.81(1)In_0.78(2). The crystal chemical peculiarities and chemical bonding in these intermetallics are briefly discussed.     

The magnesium-rich intermetallics Ir3.30(1)Mg17.96(4)In0.74(4) and Ir3Mg17.1(1)In1.9(1)

Phase analytical investigations in the system magnesium-iridium-indium revealed the magnesium-rich intermetallics Ir_3.30(1)Mg_17.96(4)In_0.74(4) and Ir₃Mg_17.1(1)In_1.9(1). The samples were prepared from the elements via induction melting in glassy carbon crucibles in a water-cooled sample chamber and subsequent annealing. Both intermetallics were investigated by X-ray powder and single-crystal diffraction: C2/c, Z=4, a=979.1(1), b=2197.4(2), , β=105.79(1)°, wR₂=0.0434, 3076 F² values, 108 variables for Ir_3.30(1)Mg_17.96(4)In_0.74(4), and a=983.39(8), b=2211.4(2), , β=105.757(6)°, wR₂=0.0487, 3893 F² values, and 115 variables for Ir₃Mg_17.1(1)In_1.9(1). Both compounds show solid solutions. In Ir_3.30(1)Mg_17.96(4)In_0.74(4), the indium site shows an occupancy by 69.9(4)% In+30.1(4)% Ir, and one magnesium site has a small mixed occupancy with indium, while nine atomic sites in Ir₃Mg_17.1(1)In_1.9(1) show Mg/In mixing with indium occupancies between 1.2(3)% and 14.8(3)%. The relatively complex crystal structure is of a new type. It can be explained by a packing of coordination number 10 and 12 polyhedra around the iridium atoms. The crystal chemical peculiarities and chemical bonding in both intermetallics is briefly discussed.     

Rare earth-nickel-indides Dy5Ni2In4 and RE4Ni11In20 (RE=Gd, Tb, Dy)

The new rare earth metal (RE)-nickel-indides Dy₅Ni₂In₄ and RE₄Ni₁₁In₂₀ (RE=Gd, Tb, Dy) were synthesized from the elements by arc-melting. Well-shaped single crystals were obtained by special annealing sequences. The four indides were investigated by X-ray diffraction on powders and single crystals: Lu₅Ni₂In₄ type, Pbam, Z=2, a=1784.2(8), b=787.7(3), c=359.9(1) pm, wR₂=0.0458, 891 F² values, 36 variables for Dy₅Ni₂In₄, U₄Ni₁₁Ga₂₀ type, C2/m, a=2254.0(9), b=433.8(3), c=1658.5(8) pm, β=124.59(2)°, wR₂=0.0794, 2154 F² values, 108 variables for Gd₄Ni₁₁In₂₀, a=2249.9(8), b=432.2(1), c=1657.9(5) pm, β=124.59(2)°, wR₂=0.0417, 2147 F² values, 108 variables for Tb₄Ni₁₁In₂₀, and a=2252.2(5), b=430.6(1), c=1659.7(5) pm, β=124.58(2)°, wR₂=0.0550, 2003 F² values, 109 variables for Dy₄Ni_10.80In_20.20. The 2d site in the dysprosium compound shows mixed Ni/In occupancy. Most nickel atoms in both series of compounds exhibit trigonal prismatic coordination by indium and rare earth atoms. Additionally, in the RE₄Ni₁₁In₂₀ compounds one observes one-dimensional nickel clusters (259 pm Ni₁-Ni₆ in Dy₄Ni_10.80In_20.20) that are embedded in an indium matrix. While only one short In₁-In₂ contact at 324 pm is observed in Dy₅Ni₂In₄, the more indium-rich Dy₄Ni_10.80In_20.20 structure exhibits a broader range in In-In interactions (291-364 pm). Together the nickel and indium atoms build up polyanionic networks, a two-dimensional one in Dy₅Ni₂In₄ and a complex three-dimensional network in Dy₄Ni_10.80In_20.20. These features have a clear consequence on the dysprosium coordination, i.e. a variety of short Dy-Dy contacts (338-379 pm) in Dy₅Ni₂In₄, while the dysprosium atoms are well separated (430 pm shortest Dy-Dy distance) within the distorted hexagonal channels of the [Ni_10.80In_20.20] polyanion of Dy₄Ni_10.80In_20.20. The crystal chemistry of both structure types is comparatively discussed.     

R12Pt7In (R=Ce, Pr, Nd, Gd, Ho)—new derivatives of the Gd3Ga2-type

A new compound Ce₁₂Pt₇In was synthesized and its crystal structure at 300 K has been determined from single crystal X-ray data. It is tetragonal, space group I4/mcm, Z=4, with the lattice parameters: a=12.102(1) Å and c=14.542(2) Å, wR2=0.1102, 842 F² values, 33 variable parameters. The structure of Ce₁₂Pt₇In is a fully ordered ternary derivative of the Gd₃Ga₂-type. Isostructural compounds has been found to form with Pr (a=11.976(1) Å, c=14.478(2) Å), Nd (a=11.901(1) Å, c=14.471(2) Å), Gd (a=11.601(3) Å, c=14.472(4) Å), and Ho (a=11.369(1) Å, c=14.462(2) Å). Magnetic properties of Ce₁₂Pt₇In, Pr₁₂Pt₇In and Nd₁₂Pt₇In were studied down to 1.7 K. All three ternaries order magnetically at low temperatures with complex spin arrangements. The electrical resistivity of Ce₁₂Pt₇In and Nd₁₂Pt₇In is characteristic of rare-earth intermetallics.     

Hydrothermal synthesis of [C6H16N2][In2Se3(Se2)]: A new one-dimensional indium selenide

A new organically templated indium selenide, [C₆H₁₆N₂][In₂Se₃(Se₂)], has been prepared hydrothermally from the reaction of indium, selenium and trans-1,4-diaminocyclohexane in water at 170 °C. This material was characterised by single-crystal and powder X-ray diffraction, thermogravimetric analysis, UV-vis diffuse reflectance spectroscopy, FT-IR and elemental analysis. The compound crystallises in the monoclinic space group C2/c (a=12.0221(16) Å, b=11.2498(15) Å, c=12.8470(17) Å, β=110.514(6)°). The crystal structure of [C₆H₁₆N₂][In₂Se₃(Se₂)] contains anionic chains of stoichiometry [In₂Se₃(Se₂)]²⁻, which are aligned parallel to the [1 0 1] direction, and separated by diprotonated trans-1,4-diaminocyclohexane cations. The [In₂Se₃(Se₂)]²⁻ chains, which consist of alternating four-membered [In₂Se₂] and five-membered [In₂Se₃] rings, contain perselenide (Se₂)²⁻ units. UV-vis diffuse reflectance spectroscopy indicates that [C₆H₁₆N₂][In₂Se₃(Se₂)] has a band gap of 2.23(1) eV.     

Bi3In4S10 and Bi14.7In11.3S38: Two new bismuth sulfides with interesting Bi-Bi bonding

Two new ternary bismuth chalcogenides, Bi₃In₄S₁₀ and Bi_14.7In_11.3S₃₈, were synthesized from the reactions of binary sulfides via a two-step flux technique. Single-crystal X-ray diffraction analyses indicate that Bi₃In₄S₁₀ crystallizes in the non-centrosymmetric space group Pm and Bi_14.7In_11.3S₃₈ crystallizes in the centrosymmetric space group P2₁/m. Both compounds adopt three-dimensional frameworks. A distinct structural feature in the two structures is the presence of chains of Bi atoms with alternating short Bi-Bi bonds of around 3.1 Å and longer distances of around 4.6 Å. The optical band gaps of 1.42(2) eV for Bi₃In₄S₁₀ and 1.45(2) eV for Bi_14.7In_11.3S₃₈ were deduced from the diffuse reflectance spectra.     

Synthesis, crystal structure and optical properties of an indium phosphate K3In3P4O16

An alkali-metal indium phosphate crystal, K₃In₃P₄O₁₆, has been synthesized by a high-temperature solution reaction and exhibits a new structure in the family of the alkali-metal indium phosphates system. Single-crystal X-ray diffraction analysis shows the structure to be monoclinic with space group P2₁/n, and the following cell parameters: a=9.7003(18), b=9.8065(18), c=15.855(3) Å, β=90.346(3)°, V=1508.2(5) Å³, Z=4, R=0.0254. It possesses three-dimensional anionic frameworks with tunnels occupied by K⁺ cations running along the a-axis. The emission and absorption spectra of the compound have been investigated. Additionally, the calculations of energy band structure, density of states, dielectric constants and refractive indexes have been performed with the density functional theory method. Also, the two-photon absorption spectrum is simulated by two-band model. The obtained results tend to support the experimental data.     

Decomposition of EuPdIn and EuPtIn at high temperature and high pressure—formation of the hexagonal Laves phases EuPd0.72In1.28 and EuPt0.56In1.44

EuPd_0.72In_1.28 and EuPt_0.56In_1.44 were prepared under multianvil high-pressure (10.5 GPa) high-temperature (1500 and 1400 K) conditions from the precursor compounds EuPdIn and EuPtIn. They were investigated by X-ray diffraction on both powders and single crystals: MgZn₂-type, space group P6₃/mmc, a=578.7(1) pm, c=944.9(3) pm, wR2=0.0734, 263 F² values for EuPd_0.72In_1.28 and a=591.1(2) pm, c=933.8(2) pm, wR2=0.0853, 151 F² values for EuPt_0.56In_1.44 with 13 variable parameters per refinement. Both structures are built up from face- and corner-sharing tetrahedra of palladium (platinum) and indium atoms. The europium cations are located in cavities within the three-dimensional [Pd_0.72In_1.28] and [Pt_0.56In_1.44] networks. The 2a and 6 h positions of the tetrahedral networks show mixed Pd/In and Pt/In occupancy in EuPd_0.72In_1.28 and EuPt_0.56In_1.44, respectively. The crystal chemistry of these indides is briefly discussed.     

Crystal structure and magnetic properties of Ce7Ni5±xGe3±xIn6 and Pr7Ni5±xGe3±xIn6

The indides Ce₇Ni_5±xGe_3±xIn₆ and Pr₇Ni_5±xGe_3±xIn₆ were synthesized from the elements by arc-melting of the components. Single crystals were grown via special annealing sequences. Both structures were solved from X-ray single crystal diffraction data: new structure type, P6/m, Z=1, a=11.385(2), c=4.212(1) Å, wR₂=0.0640, 634F² values, 25 variables for Ce₇Ni_4.73Ge_3.27In₆ and a=11.355(6), c=4.183(2) Å, wR₂=0.0539, 563F² values, 25 variables for Pr₇Ni_4.96Ge_3.04In₆. Both indides show homogeneity ranges through Ni/Ge mixing (M sites). This new structure type can be derived from the AlB₂ structure type by a substitution of the Al and B atoms by CeM₁₂ and NiIn₆Ce₃ polyhedra (tricapped trigonal prism). Magnetic susceptibility measurements on a polycrystalline sample of Ce₇Ni₅Ge₃In₆ indicated Curie-Weiss like paramagnetic behavior down to 1.71 K with the effective magnetic moment slightly reduced in relation to the value expected for trivalent cerium ions. No magnetic ordering is evident.     

Synthesis, structure and properties of SrAu3In3 and EuAu3In3—New indides with gold zig-zag chains

New indides SrAu₃In₃ and EuAu₃In₃ were synthesized by induction melting of the elements in sealed tantalum tubes. Both indides were characterized by X-ray diffraction on powders and single crystals. They crystallize with a new orthorhombic structure type: Pmmn, Z=2, a=455.26(9), b=775.9(2), c=904.9(2) pm, wR2=0.0425, 485 F² values for SrAu₃In₃ and a=454.2(2), b=768.1(6), c=907.3(6) pm, wR2=0.0495, 551 F² values for EuAu₃In₃ with 26 variables for each refinement. The gold and indium atoms build up three-dimensional [Au₃In₃] polyanionic networks, which leave distorted hexagonal channels for the strontium and europium atoms. Within the networks one observes Au2 atoms without Au-Au contacts and gold zig-zag chains (279 pm Au1-Au1 in EuAu₃In₃). The Au-In and In-In distances in EuAu₃In₃ range from 270 to 290 and from 305 to 355 pm. The europium atoms within the distorted hexagonal channels have coordination number 14 (8 Au+6 In). EuAu₃In₃ shows Curie-Weiss behavior above 50 K with an experimental magnetic moment of 8.1(1) μB/Eu atom. ¹⁵¹Eu Mössbauer spectra show a single signal at δ=−11.31(1) mm/s, compatible with divalent europium. No magnetic ordering was detected down to 3 K.     

Syntheses, crystal and electronic structures of two new lead indium phosphates: Pb2In4P6O23 and Pb2InP3O11

Two compounds Pb₂In₄P₆O₂₃ and Pb₂InP₃O₁₁ in the new family of lead indium phosphates were synthesized by high temperature solution growth (HTSG) method and structurally characterized by X-ray single crystal diffraction, powder diffraction and electron microscopy. Two title compounds display different types of 3D architectures with interesting tunnel structure are built up of the InO₆ octahedra and PO₄ tetrahedra, sharing the corners or edges, and the Pb²⁺ cations are sitting in the tunnel. The structure of Pb₂In₄P₆O₂₃ features a novel 3D open framework which can be considered as built from the layer of {In₄(P₂O₇)(PO₄)₂}²⁻ parallel to the ac plane interconnected by bridging the single PO₄. The structure of Pb₂InP₃O₁₁ can be described by the assemblage of [InP₂O₁₁] units with monophosphate groups. The stereochemical activity of the Pb^II lone pair has also been discussed. The electronic band structure calculations for the two compounds have also been performed with the density functional theory method. The study of calculations and optical diffuse reflectance absorption spectrum measurement show both compounds are indirect band-gap insulators.     

Solvothermal synthesis and characterisation of new one-dimensional indium and gallium sulphides: [C10N4H26]0.5[InS2] and [C10N4H26]0.5[GaS2]

Two new main group metal sulphides, [C₁₀N₄H₂₆]_0.5[InS₂] (1) and [C₁₀N₄H₂₆]_0.5[GaS₂] (2) have been prepared solvothermally in the presence of 1,4-bis(3-aminopropyl)piperazine and their crystal structures determined by single-crystal X-ray diffraction. Both compounds are isostructural and crystallise in the monoclinic space group P2₁/n (Z=4), with a=6.5628(5), b=11.2008(9), c=12.6611(9) Å and β=94.410(4)° (wR=0.035) for compound (1) and a=6.1094(5), b=11.2469(9), c=12.7064(10) Å and β=94.313(4)° (wR=0.021) for compound (2). The structure of [C₁₀N₄H₂₆]_0.5[MS₂] (M=In,Ga) consists of one-dimensional [MS₂]⁻ chains which run parallel to the crystallographic a axis and are separated by diprotonated amine molecules. These materials represent the first example of solvothermally prepared one-dimensional gallium and indium sulphides.     

Preparation, structures, and band gaps of RbInS2 and RbInSe2

The two compounds RbInS₂ and RbInSe₂ have been synthesized at 773 K by means of the reactive flux method. These isostructural compounds crystallize in space group C2/c of the monoclinic system with 16 formula units in a cell at 153 K of dimensions , , , and β=100.244(1)° for RbInS₂, and , , , and β=100.16(2)° for RbInSe₂. The In atoms are four-coordinated. The structure consists of two-dimensional (Q=S, Se) layers perpendicular to [001] separated from the Rb⁺ cations. Adamantane-like In₄Q₁₀ units are connected by common corners to form the layers. Band structure calculations indicate that these compounds are direct band-gap semiconductors with the smallest band gap at the Γ point. The calculated band gaps are 2.8 eV for RbInS₂ and 2.0 eV for RbInSe₂, values that are consistent with the colors of the compounds.     

(2,2′-bipy)[In2(OH)2(H2O)](SO4)2: The first indium sulfate with a layer structure

The first indium sulfate coordination complex, (2,2′-bipy)[In₂(OH)₂(H₂O)](SO₄)₂ (2,2′-bipy=2,2′-bipyridyl) was hydrothermally synthesized and characterized by single-crystal X-ray diffraction (XRD), the powder XRD, elemental analysis, inductively coupled plasma (ICP) analysis, thermogravimetric analysis (TGA), IR spectroscopy and fluorescent spectroscopy. It is noteworthy that this compound exhibits a novel two-dimensional layer structure, which is built up from two distinct motifs, a butlerite-type chain and a single 4-ring (S4R) unit. The adjacent layers are stably packed together and extended into three-dimensional supramolecular arrays via π-π stacking interactions of the 2,2′-bipy ligands. Additionally, this compound shows strong fluorescent property at room temperature, which may be assigned to ligand-centered π*-π transitions.     

Synthesis, crystal structure, and preliminary study of luminescent properties of InTbGe2O7

A new indium terbium germanate InTbGe₂O₇, which is a member of the thortveitite family, was prepared as a polycrystalline powder material by high-temperature solid-state reaction. This new compound crystallizes in the monoclinic system, space group C2/c (No. 15), with unit cell parameters a=6.8818(2) Å, b=8.8774(3) Å, c=9.7892(4) Å, β=101.401(1)°, V=586.25(4) ų and Z=4. Its structure was characterized by Rietveld refinement of powder laboratory X-ray diffraction data. It consists of octahedral sheets that are held together by sheets of isolated Ge₂O₇ diorthogroups composed of two tetrahedra sharing a common vertex. It contains only one octahedral site occupied by In³⁺ and Tb⁺³ cations. The characteristic mirror plane in the thortveitite (Sc₂Si₂O₇) space group (C2/m, No. 12) is not present in this new compound. Besides, in InTbGe₂O₇, the Ge–O–Ge angle bridging two diorthogroups is 156.8(2)° as compared to the one in thortveitite, which is 180°. On the other hand, luminescent properties were observed when it is excited with 376.5 nm wavelength. The luminescence spectrum shows typical transitions from the ⁵D₄ multiplet belonging to the trivalent terbium ion.     

Dodecanuclear rhenium cluster complexes with an interstitial carbon atom: Synthesis, structures and properties of two new compounds K6[Re12CS17(OH)6]·4H2O and Na12Re12CS17(SO3)6·48.5H2O

The dodecanuclear rhenium anionic complex with terminal hydroxo ligands [Re₁₂CS₁₇(OH)₆]⁶⁻ was obtained by the reaction of K₆[Re₁₂CS₁₇(CN)₆]·20H₂O with molten KOH at 300 °C. The cluster complex was crystallized as a potassium salt from aqueous solution. The reaction between K₆[Re₁₂CS₁₇(OH)₆]·4H₂O and Na₂S₂O₄ in water under reflux results in the formation of the complex Na₁₂[Re₁₂CS₁₇(SO₃)₆]·48.5H₂O. Both new compounds were characterized by single-crystal X-ray diffraction, elemental analyses and IR spectroscopy. The electronic structure of [Re₁₂CS₁₇(OH)₆]⁶⁻ was also elucidated by DFT calculations.     

Gallium substitutions as a means to stabilize alkaline-earth and rare-earth metal pnictides with the cubic Th3P4 type: Synthesis and structure of A7Ga2Sb6 (A=Sr, Ba, Eu)

Three new compounds—Sr_7.04(2)Ga_1.94(2)Sb₆, Ba_7.02(3)Ga_1.98(3)Sb₆ and Eu_7.04(3)Ga_1.90(3)Sb₆—have been synthesized from reactions of the corresponding elements using gallium as a metal flux. Their crystal structures (space group I4¯3d (No. 220), Z=2 with unit cell parameters: a=9.9147(9) Å for the Sr-compound; a=10.3190(9) Å for the Ba-compound; and a=9.7866(8) Å for the Eu-compound) have been established by single-crystal X-ray diffraction. The structures are best described as Ga-stabilized derivatives of the hypothetical Sr₄Sb₃, Ba₄Sb₃ and Eu₄Sb₃ phases with the cubic Th₃P₄ type. Such an inclusion of interstitial Ga atoms in this atomic arrangement results in the formation of isolated [Ga₂Sb₆]¹⁴⁻ fragments, isoelectronic and isostructural with the [Sn₂Te₆]⁶⁻ anions in the K₃SnTe₃ type, and allows for the attainment of a charge-balanced electron count. In that sense, the Sr₄Sb₃, Ba₄Sb₃ and Eu₄Sb₃ binaries, which are expected to be electron-deficient and are currently unknown, can be “turned” into Sr₇Ga₂Sb₆, Ba₇Ga₂Sb₆ and Eu₇Ga₂Sb₆, whose structures are readily rationalized following the Zintl concept.     

Gd3Pt4In12 and Tb3Pt4In12 — New Ternary Indides with Condensed Distorted [PtIn6] Trigonal Prisms

The ternary indium compounds Gd₃Pt₄In₁₂ and Tb₃Pt₄In₁₂ were synthesized from an indium flux. Arc‐melted precursor alloys with the starting compositions ∼GdPtIn₄ and ∼TbPtIn₄ were annealed with a slight excess of indium at 1200 K followed by slow cooling (5 K/h) to 870 K. Both compounds were investigated by X‐ray powder diffraction: a = 990.5(1), c = 1529.5(3) pm for Gd₃Pt₄In₁₂ and a = 988.65(9), c = 1524.0(1) pm for Tb₃Pt₄In₁₂. The structure of the gadolinium compound was solved and refined from single crystal X‐ray data: P3¯m1, wR2 = 0.0470, 1469 F² values and 62 variable parameters. Both crystallographically different platinum sites have a slightly distorted trigonal prismatic indium coordination. These [PtIn₆] prisms are condensed via common edges and corners forming a complex three‐dimensional [Pt₁₂In₃₂] network. The gadolinium, In1 and In7 atoms fill cavities within this polyanion. Tb₃Pt₄In₁₂ is isotypic with the gadolinium compound.