CuPc／InP（O／I）异质结的电学特性及其引起的Raman效应

本文首次报导了ＣｕＰｃ／ＩｎＰ，Ｈ２Ｐｃ／ＩｎＰ（Ｏ／Ｉ）异质结的整流（Ｊ－Ｖ）特性和电容电压（Ｃ－Ｖ）特性，并研究了Ｏ／Ｉ界面态对ＣｕＰｔ ＬＢ膜Ｒａｍａｎ光谱的影响，这种影响导致了ＣｕＰｃ ＬＢ膜分子产生了新的正则振动模。     

含R2dtc配体和V=O基的金属簇红外光谱研究

本文报道两类含Ｒ２ｄｔｃ配体的金属簇的红外光谱特点及某些规律,含Ｒ２ｄｔｃ的立方簇合物在４００－５００ｃｍ＾－１有较宽而弱的吸收,可归结于Ｍ－μ３Ｓ振动。Ｍ－Ｓｄｔｃ在３３０－３８０ｃｍ＾－１,Ｃ－Ｎ振动在１４７０－１５１０ｃｍ＾－１。二甲基ｄｔｃ配体立方的ｖ（Ｃ－Ｎ）与ｖ（Ｃ＝Ｓ）比值他二烷基ｄｔｃ立方烷的相应振动分别蓝移和红移,可归结于甲基超共轭效应所致。「Ｖ２Ｃｕ２Ｓ４（Ｒ２ｄｔｃ）２（ＰｈＳ）２」＾２－和「ＶＣｕ４Ｓ４（Ｒ２ｄｔｃ）ｎ（ＰｈＳ）４－ｎ」＾３－（ｎ＝０,１,２）的Ｍ－μ３Ｓ振动分别出现在４８０和４６５ｃｍ＾－１,可作为区别两类化合物的一个指标。另一类含（Ｒ２ｄｔｃ）２Ｖ２Ｏ２（μ－Ｓ）２单元的金属簇中,Ｖ－Ｏ伸缩频率在８４４－９７０ｃｍ＾－１范围内,（Ｅｔ４Ｎ）「Ｖ２Ｓ２Ｏ３（Ｅｔ２ｄｔｃ     

布里渊散射研究In-BCVIG单晶的体磁振子和偶极——交换磁振子

布里渊散射研究Ｉｎ－ＢＣＶＩＧ单晶的体磁振子和偶极——交换磁振子刘玉龙张昊朱恪（中国科学院物理研究所北京１０００８０）萧季驹李泽民（香港城市大学物理及材料科学系香港九龙）ＭａｇｎｏｎＬｉｇｈｔＳｃａｔｅｒｉｎｇｆｒｏｍＩｎ－ＢＣＶＩＧＳｉｎｇｌｅＣｒ...     

Authors Index to Volume B5

ＡｕｔｈｏｒｓＩｎｄｅｘｔｏＶｏｌｕｍｅＢ５ＡＮＨｏｎｇｌｉｎ－－（６），５０１ＢＡＯＧｕｏｊＵｎ－－（ｌ），８ＢＡＯＪｉａｓｈａｎ－－（ｌ），４３ＣＡＩＢａｎｇｗｅｉ－－（４），３６３ＣＡＯａｃｉｎｇ－－（１），９４ＣＡＯＱｉｎｇ－－（５），４３９...     

铂Hugoniot曲线的Ab initio计算

对于一个原子平均体积为Ｖ,温度为Ｔ的热力学系统,体系的Ｈｅｌｍｂｏｌｔｚ自由能可以写为Ｆ（Ｖ,Ｔ）＝Ｅｃ（Ｖ）＋Ｆｉｏｎ（Ｖ,Ｔ）＋Ｆｅｌ（Ｖ,Ｔ）＋Ｆｍａｎ（Ｖ,Ｔ）其中Ｅｃ为０－Ｋ冷能。对于其中的电子热激发贡献Ｆｅｌ,目前流行的有三种计算方案,即：Ｍｏｒｕｚｚｉ的Ｄｅｂｙｅ－Ｇｒｕｅｎｅｉｓｅｎ方案、Ｍｏｒｉａｒｔｙ的ＭＧＰＴ方案和Ｗａｓｓｅｒｍａｎ的ＣＥＬＬ模型方案。Ｄｅｂｙｅ－Ｇｒｕｅｎｅ     

Ag/Pb(Zr0.53Ti0.47)O3/YBa2Cu3O7-x三端器件构造和性能的研究

应用脉冲激光沉积法和光刻技术我们成功地制作Ａｇ／Ｐｂ（Ｚｒ０．５３Ｔｉ０．４７）Ｏ３／ＹＢａ２Ｃｕ３Ｏ７－ｘ（ＰＺＴ／ＹＢＣＯ）三端器件．为了降低矫顽场,应用变形相界（ｘ≈０．５３）的５５０纳米厚的ＰＺＴ作为门电极,通过优化沉积条件和门电极面积小型化（６×１０－６ｃｍ２）,在６４Ｋ下三端器件门电极显示了极好的电性能,低的矫顽场（～３７ｋＶ／ｃｍ）、大的饱和极化强度（６０μＣ／ｃｍ２）、剩余极化强度（４１μＣ／ｃｍ２）以及击穿电压～３×１０５Ｖ／ｃｍ．对于我们的场效应器件,在±９Ｖ的情况下沟道电阻被调制～３％．     

敏通CCD——MTV-1881EX用于业余天文望远镜

敏通ＣＣＤ——ＭＴＶ－１８８１ＥＸ用于业余天文望远镜我们在１９９６年偿试用高解析度、高灵敏度（０．０２ｌｘ）的敏通ＣＣＤ、ＭＴＶ－１８８１ＥＸ加装在口径仅为１０ｃｍ的业余级天文望远镜上看到了清晰的月亮、木星和土星（包括它的光环）等天体。它可直接用电视...     

LaH2分子基态（C2V,A1）的势能函数

在ＱＣＩＳＤ水平上基于相对论紧致有效势（ＲＣＥＰ：Ｒｅｌａｔｉｖｉｓｔｉｃ Ｃｏｍｐａｃｔ Ｅｆｆｅｃｔｉｖｅ Ｐｏｔｅｎ－ｔｉａｌ）方法优化出ＬａＨ２分子的基态为Ｃ２ｖ（Ｘ＾２Ａ１）构型,其〈ＨＬａＨ－１２４４°、平衡核间距Ｒｅ＝２．１９４５Ａ和离子解能Ｄｅ＝５．５９９ｅＶ,并计算出谐振频率：ｖ１＝１２１６．５２１ｃｍ＾－１、ｖ２＝１０８７．４１７ｃｍ＾－１和ｖ３＝２１５６．９５７２ｃｍ＾－１。     

Two-photon Induced UV Fluorescence in Photo-active Spiropyran Molecules

Ｔｗｏ－ｐｈｏｔｏｎＩｎｄｕｃｅｄＵＶＦｌｕｏｒｅｓｃｅｎｃｅｉｎＰｈｏｔｏ－ａｃｔｉｖｅＳｐｉｒｏｐｙｒａｎＭｏｌｅｃｕｌｅｓ￥ＣＨＩＬｕｎｇｕａｎｇ；ＷＡＮＧＺｕｇｅｎｇ（ＤｅｐａｒｔｍｅｎｔｏｆＰｈｙｓｉｃｓ，ＥａｓｔＣｈｉｎａＮｏｒｍａｌＵｎ...     

Complex-valued Vector-matrix Multiplication Architecture

Ｃｏｍｐｌｅｘ－ｖａｌｕｅｄＶｅｃｔｏｒ－ｍａｔｒｉｘＭｕｌｔｉｐｌｉｃａｔｉｏｎＡｒｃｈｉｔｅｃｔｕｒｅ￥ＺＨＯＵＣｈａｎｇｈｅ；ＬＩＵＬｉｒｅｎ（ＳｈａｎｇｈａｉＩｎｓｔｉｔｕｔｅｏｆＯｐｔｉｃｓａｎｄＦｉｎｅＭｅｃｈａｎｉｃｓ，Ａｃａｄｅｍｉａ...     

InP表面对CuPc LB膜的影响及其低温效应

研究发观CuPcLB薄膜和粗糙的InP表面之间存在着相互作用。这种相互作用对吡咯的CN伸缩的正则振动模影响较强。除此之外,还研究了处在室温和液氮温度下分别吸附于Au和InP表面上的CuPcLB膜的X射线衍射谱,发现CuPcLB膜在低温下发生了可逆的结构相变。 关键词：     

Orientation-dependent ionization potential of CuPc and energy level alignment at C60/CuPc interface

The electronic structure evolution of interfaces of fullerene (C₆₀) with copper phthalocyanine (CuPc) on highly oriented pyrolytic graphite (HOPG) and on native silicon oxide has been investigated with ultraviolet photoemission spectroscopy and inverse photoemission spectroscopy. The LUMO edge of C₆₀ was found to be pinned at the interface with CuPc on SiO₂. A substantial difference in the electron affinity of CuPc on the two substrates was observed as the orientation of CuPc is lying flat on HOPG and standing up on SiO₂. The ionization potential and electron affinity of C₆₀ were not affected by the orientation of CuPc due to the spherical symmetry of C₆₀ molecules. We observed band bending in C₆₀ on the standing-up orientation of CuPc molecules, while the energy levels of C₆₀ on the flat-lying orientation of CuPc molecules were observed to be flat. The observation points to a dependence of photoexcited charge transfer on the relative molecular orientation at the interface.     

Electronic structure of pristine CuPc: Experiment and calculations

The filled and unoccupied electronic states of the organic semiconductor copper-phthalocyanine (CuPc) have been determined by a combination of direct and resonant photoemission, near-edge X-ray absorption and first principles calculations. The experimentally obtained electronic states of CuPc are in very good agreement with results of ab initio density of states, allowing to derive detailed site specific information.     

Impedance spectroscopy studies on CuPc/n-Si hybrid solar cell

Impedance spectroscopy of copper phthalocyanine (CuPc)/n-Si hybrid solar cell was studied. The dielectric relaxation mechanism of the solar cell was analyzed by Cole–Cole plots, indicating the presence of a single relaxation mechanism. The equivalent circuit model consisting of a parallel resistor and capacitor in series with a resistor was found to give a well fit to the experimental data. The conduction mechanism was suggested to be a space-charge limited current with exponential trap distribution. Beside, the dielectric relaxation time of the device was decreased with increasing applied bias voltages.     

Enhanced photosensitivity of InGaZnO-TFT with a CuPc light absorption layer

A copper phthalocyanine (CuPc) organic semiconductor is capped onto an amorphous indium–gallium–zinc-oxide (InGaZnO) thin film transistor (TFT) to enhance the photosensitivity of InGaZnO-TFT. The CuPc organic semiconductor is served as a light absorption layer and forms a p–n junction with the InGaZnO film. After 60 s white light illumination, light responsivity (R) of InGaZnO-TFT with a CuPc light absorption layer reaches a value of 148.5 A/W at a gate-source voltage (V_GS) of 20 V, which is much larger than that (31.2 A/W) of the conventional InGaZnO-TFT. The results are attributed to the following mechanism. First, a CuPc layer is employed as the light absorption layer. Second, CuPc/InGaZnO p–n junction enables the injection of electron into InGaZnO film. Our results indicate that using CuPc as light absorption layer is an effective approach to improve the photosensitivity of InGaZnO-TFT.     

Improving the mobility of CuPc OFETs by varying the preparation conditions

In this work, three different preparation conditions were used for testing the performance of p-conducting copper phthalocyanine (CuPc) organic field-effect transistors (OFETs). The charge carrier mobility (μ _sat=(1.5±0.6)×10^?3 cm²/V?s) of the CuPc OFETs with the CuPc film deposited while keeping the substrate at room temperature could be improved when the gate dielectric was modified by a self-assembled monolayer of n-octadecyltrichlorosilane (μ _sat=(3.8±0.4)×10^?3 cm²/V?s) or when elevated temperatures were applied to the substrate (T _S,av=127 ^°C) during the deposition of the organic film (μ _sat=(6.5±0.8)×10^?3 cm²/V?s). For the latter case, the dependence of the mobility and threshold voltage with increasing thickness of the organic film was tested—above 13 nm film thickness, no further significant increase of the hole mobility or change in the threshold voltage could be observed. The environmental stability of the OFETs was checked by performing ex situ measurements immediately as the sample was exposed to atmosphere and after 40 days of exposure. The effect of the different preparation conditions on the morphology of the organic films prepared in this work is also discussed in this context.     

Stark spectroscopy of CuPc organic semiconductor with a submicron metal-electrode grating

The optical and electro-optical properties of organic copper phthalocyanine semiconductor (α- CuPc) have been investigated by Stark (electroabsorption) spectroscopy using a metal electrode grating with a submicron (0.88 μm) interelectrode distance. Differences between dipole moments (Δμ) and polarizabilities (Δα) in the excited and ground states of α-CuPc are measured for a nanoscale semiconductor film. It is concluded that the extremely high values of Δμ and Δα are in principle not parameters of individual α-CuPc molecules: they are determined by exciton effects specifically in the polycrystalline medium with a characteristic morphology of hyperfine films, which depends on the structure of the samples and their fabrication technology.     

Surface-enhanced Raman effect in ultra-thin CuPc films employing periodic silver nanostructures

In order to investigate the interaction of organic molecules with metals by means of Raman spectroscopy, special substrates were designed which combine interference and surface-enhancement mechanisms. Triangular shaped silver nanostructures with an angle bisector and a height of about 80 nm were prepared by nanosphere lithography on silicon substrates with a 100-nm oxide layer. Utilizing these substrates the dependence of the Raman signal intensity on the thickness of copper phthalocyanine (CuPc) was studied in the range from few percentages of a monolayer coverage up to 80 nm using an in situ setup. At an excitation in resonance with the plasmons of the nanostructures (2.6 eV) an increase of the signal was observed during film growth. Contrary to that, excitation at 1.92 eV in resonance with the CuPc absorption band leads to a strongly enhanced Raman signal for submonolayer coverage which hardly changes with the CuPc film thickness in the ultra-low coverage regime.     

Photoelectric characteristics of photodetectors based on a GaAs/CuPc heterojunction

A study is made of the volt-ampere, volt-farad, and spectral characteristics of photodetectors based on an n-GaAs/p-CuPc heterojunction. When exposed to white light (E=600 W/m²) through Ag, the elements Cu/GaAs/CuPc/Ag have the following characteristics: U_xx=0.6 V; I_sc=30.2 A/m², FF=0.49. Based on this data and with allowance for the transmission factor (τ=7%), η=18%. Quantum efficiency is 0.5 el./phot. in the UV-region at λ₁ = 300 nm, while α₂ = 0.85 el./phot. in the visible region at λ₂ = 800 nm. The limiting sensitivity of the photodetector is 10⁻¹¹ W. The following was determined from the volt-farad and spectral characteristics: C_b=8.6·10⁻⁴ F/m²; barrier width w₁=16nm in CuPc and w₂=34 nm in CaAs; exciton diffusion length L₁=2.5 nm and L₂=7.5 nm, respectively. The photodetectors undergo almost no degradation. The values of U_xx and I_sc remain constant with multiple exposures to UV-light of 140 W/m² intensity over 6 h at constant temperature. The sensitivity region of the photodetectors is from 200 to 1000 nm. It is found that an anisotropic heterojunction in the form of two series-connected Schottky barriers is created at the boundary between n-GaAs and oxygen-doped p-CuPc in the presence of charged surface states at the interface. Vologda Polytechnic Institute. Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 7, pp. 41–45, July, 1996.     

Controlling geometric and electronic properties of highly ordered CuPc thin films

Geometric and electronic properties of ordered copper phthalocyanine (CuPc) thin films grown on hydrogen- and antimony-passivated Si(1 1 1) surfaces have been studied using near edge X-ray absorption fine structure (NEXAFS) and photoemission spectroscopy. The H- and Sb-passivations of vicinal Si surfaces resulted in different molecular orientations in thick films, namely upright and near lying molecules, respectively. In the absence of the vicinality, the molecules on the Sb-passivated surface changed towards upright orientation. The work function of the films was monitored during the growth and correlated with the molecular orientation.