Clock shift in a strongly interacting two-dimensional Fermi gas

We derive universal relations for the rf spectroscopy of a two-dimensional Fermi gas consisting of two spin states interacting through an S-wave scattering length. The rf transition rate has a high-frequency tail that is proportional to the contact and displays logarithmic scaling violations, decreasing asymptotically like 1/(ω2ln2ω). Its coefficient is proportional to ln2'(a'(2D)/a(2D)), where a(2D) and a'(2D) are the two-dimensional scattering lengths associated with initial-state and final-state interactions. The clock shift is proportional to the contact and to ln(a'(2D)/a(2D)). If |ln(a'(2D)/a(2D))| > 1, the clock shift arises as a cancellation between much larger contributions proportional to ln2(a'(2D)/a(2D)) from bound-bound and bound-free rf transitions.     

A novel two-dimensional SiO sheet with high-stability,strain tunable electronic structure,and excellent mechanical properties

Using the structure search of particle swarm optimization(PSO) algorithm combined with density functional theory(DFT), we conduct a systematic two-dimensional(2D) material research on the SiO and discover a P2 monolayer structure.The phonon spectrum shows that the 2D P2 is dynamic-stable under ambient pressure. Molecular dynamics simulations show that 2D P2 can still exist stably at a high temperature of 1000 K, indicating that 2D P2 has application potential in high-temperature environments. The intrinsic 2D P2 structure has a quasi-direct band gap of 3.2 e V. The 2D P2 structure can be transformed into a direct band gap semiconductor by appropriate strain, and the band gap can be adjusted to the ideal band gap of 1.2 e V–1.6 e V for photovoltaic materials. These unique properties of the 2D P2 structure make it expected to have potential applications in nanomechanics and nanoelectronics.     

气固化学反应体系产生单重态氧的初步实验研究

 介绍了一种新的产生单重态氧（O₂（¹△g）的气固化学反应体系，即在固定床式反应器中采用固体过氧化钠粉末与氯气（Na₂O₂/Cl₂）进行反应的气固化学反应体系。实验分别通过用对近红外敏感的光谱仪和锗探头监测了反应产生的（O₂（¹△g）的发射光谱和1 270 nm的光信号，同时通过数据采集系统监测了反应池固体反应层和测试池中气体的温度的变化曲线。实验测得了（O₂（¹△g）在1 270 nm附近的特征发射光谱，此光谱表明该体系是一个很好的产生（O₂（¹△g）的体系，同时，实验现象表明该反应是强放热反应。     

NCl（a^1△）／I（^2P3／2）传能体系的实验研究

利用微波放电C12／He等离子体作为Cl源，对反应NCl(a^1△) I(^2P3/2)→NCl(X^3∑) I(^2P3/2)进行了实验研究，得到了较大的I(^2P3/2)自发辐射荧光信号，检测到NCl(a^1△，b^1∑)自发辐射荧光光谱在存在少量I(^2P3/2)下发生的显著变化，其中NCl(a^1△)自发辐射荧光信号降低，同时由于I(^2P3/2)的作用，NCl(b^1∑)自发辐射荧光信号大幅度增加。在考察各反应气体流量对I(^2P3/2)自发辐射荧光信号的影响时发现，在本次实验条件下，各种气体的最佳流量：He为1—4mmol/s，I2为0．01—0．03mmol/s，Cl2为1．0mmol/s左右，而HN3流量略大于Cl2流量时信号升高幅度开始变缓，约为Cl2流量的两倍时信号不再有显著的变化。     

Li(2P)+H_2→LiH+H反应截面的测量

在样品池条件下,用脉冲激光670.8 nm线激发Li原子基态至2P态,测量了的反应碰撞能量转移截面。池温保持在888 K,Li原子密度为10~(13)cm~(-3)量级,而H_2气压控制在60～300 Pa之间,测量时间分辨荧光光谱,它由两部分组成,在脉冲激光激发的瞬间(不超过10 ns),荧光迅速增强至最大值;激发结束后,荧光强度按指数衰减,由衰减曲线得到2P态原子在不同H_2气压下的有效寿命。根据Stern-Volmer方程,有效寿命与H_2气压成线性关系,由该直线的斜率给出了总的猝灭截面(25.1±4.0)×10~(-16)cm~2,而从直线的截距得到辐射寿命为(270±54)ns。总的猝灭截面是反应与非反应碰撞截面之和,由在不同H_2气压下记录的瞬态(10 ns)荧光快速增强信号得到反应截面为(0.2±0.1)×10~(-16)cm~2,虽只占总猝灭截面的1/125,但它在Li(2P)+H_2的碰撞传能中所起的作用是不能略去的。     

偏二甲肼在氟化镁涂层表面的吸附与反应

研究了偏二甲肼在氟化镁涂层表面的吸附和化学反应情况.首先用液相或气相偏二甲肼沾染氟化镁涂层表面,再将涂层置于真空环境足够长时间,然后通过对比沾染前、后涂层表面的红外吸收光谱、X射线光电子能谱和漫反射率,了解涂层表面的吸附状况和性能变化.实验表明,覆盖于氟化镁涂层表面的偏二甲肼液膜分子,在真空环境下充分脱附的时间约为2h,充分脱附后的涂层表面只有单层化学吸附存在,其质量密度约为27ng/cm2,实验后氟化镁涂层表面的漫反射率下降了10%～15%;在-10℃的偏二甲肼饱和蒸气中沾染10min后,氟化镁涂层表面的原子组成和漫反射率变化很小,红外吸收光谱也没有偏二甲肼特征峰出现.     

TDDFT study on the excited‐state hydrogen bonding of N‐(2‐hydroxyethyl)‐1,8‐naphthalimide and N‐(3‐hydroxyethyl)‐1,8‐naphthalimide in methanol solution

The time‐dependent density functional theory method was performed to investigate the excited‐state hydrogen‐bonding dynamics of N‐(2‐hydroxyethyl)‐1,8‐naphthalimide (2a) and N‐(3‐hydroxyethyl)‐1,8‐naphthalimide (3a) in methanol (meoh) solution. The ground and excited‐state geometry optimizations, electronic excitation energies, and corresponding oscillation strengths of the low‐lying electronically excited states for the complexes 2a + 2meoh and 3a + 2meoh as well as their monomers 2a and 3a were calculated by density functional theory and time‐dependent density functional theory methods, respectively. We demonstrated that the three intermolecular hydrogen bonds of 2a + 2meoh and 3a + 2meoh are strengthened after excitation to the S₁ state, and thus induce electronic spectral redshift. Moreover, the electronic excitation energies of the hydrogen‐bonded complexes in S₁ state are correspondingly decreased compared with those of their corresponding monomer 2a and 3a. In addition, the intramolecular charge transfer of the S₁ state for complexes 2a + 2meoh and 3a + 2meoh were theoretically investigated by analysis of molecular orbital. Copyright © 2014 John Wiley & Sons, Ltd.     

（2＋2）-Dimensional Discrete Soliton Equations and Integrable Coupling System

In this paper, we extend a （2＋2）-dimensional continuous zero curvature equation to （2＋2）-dimensional discrete zero curvature equation, then a new （2＋2）-dimensional cubic Volterra lattice hierarchy is obtained. Fhrthermore, the integrable coupling systems of the （2＋2）-dimensional cubic Volterra lattice hierarchy and the generalized Toda lattice soliton equations are presented by using a Lie algebraic system sl（4）.     

Precision microwave measurement of the 2 3P1-2 3P2 interval in atomic helium

The 2 3P1-to- 2 3P2 interval in atomic helium is measured using a thermal beam of metastable helium atoms excited to the 2 3P state using a 1.08-&mgr;m diode laser. The 2 3P1-to- 2 3P2 transition is driven by 2.29-GHz microwaves in a coaxial transmission line. Our result of 2 291 174.0+/-1.4 kHz is the most precise measurement of helium 2 3P fine structure. This measurement plays a key role in obtaining a new value for the fine-structure constant.     

Eu2+掺杂CaSi2O2N2荧光粉发光性能

采用固相反应法合成了组成为Ca_1-xEu_xSi₂O₂N₂的Eu²⁺掺杂CaSi₂O₂N₂荧光粉.通过荧光光谱对样品的发光性能进行了研究,发现Eu²⁺掺杂CaSi₂O₂N₂荧光粉发射光谱为宽波段的单峰结构,主要包含绿光和黄光区,发射峰在556~568 nm.从发射光谱的宽带特征来看,CaSi₂O₂N₂:Eu²⁺的发射主要对应着Eu²⁺离子4f⁶5d→4f⁷跃迁.从激发光谱所覆盖的范围还可以看到,样品可以有效的被UV蓝-光激发,这意味着该类荧光粉在白光LED方面有可能得到广泛的应用.另外,样品的发光性能与激发离子的浓度有着很大关系.激发离子浓度增大时,发射光谱会发生明显红移.利用这一性质,可以通过改变Eu²⁺浓度来调节荧光粉的发光范围,从而满足不同场合的需要.同时,Eu²⁺浓度提高,样品发射光谱的强度也会随之增强,在x=0.06时发射强度达到最大值,之后继续增加Eu²⁺浓度,强度不仅没有增加反而降低,即出现浓度猝灭现象.     

Temperature-dependent rectifying and photovoltaic characteristics of an oxygen-deficient Bi_2Sr_2Co_2O_y/Si heterojunction

A Bi2Sr2Co2Oy/Si heterojunction is obtained by growing a layer of p-type oxygen-deficient Bi2Sr2Co2Oy film on a commercial n-type silicon wafer by pulsed laser deposition. Its rectifying and photovoltaic properties are studied in a wide temperature range from 20 K to 300 K. The transport mechanism under the forward bias can be attributed to a trap- filled space-charge-limited current conduction mechanism. Under the irradiation of a 532-nm continuous wave laser, a clear photovoltaic effect is observed and the magnitude ofphotovoltage increases as the temperature decreases, The results demonstrate the potential application of a Bi2SrzCo2Oy-based heterojunction in the photoelectronic devices.     

Investigation of a 4H-SiC metal-insulation-semiconductor structure with an Al2O3/SiO2 stacked dielectric

Atomic layer deposited(ALD) Al2O3 /dry-oxidized ultrathin SiO2 films as a high-k gate dielectric grown on 8°off-axis 4H-SiC(0001) epitaxial wafers are investigated in this paper.The metal-insulation-semiconductor(MIS) capacitors,respectively with different gate dielectric stacks(Al2O3/SiO2,Al2O3,and SiO2) are fabricated and compared with each other.The I-V measurements show that the Al2O3/SiO2 stack has a high breakdown field(≥12 MV/cm) comparable to SiO2,and a relatively low gate leakage current of1×10-7A/cm2 at an electric field of4 MV/cm comparable to Al2O3.The 1-MHz high frequency C-V measurements exhibit that the Al2O3/SiO2 stack has a smaller positive flat-band voltage shift and hysteresis voltage,indicating a less effective charge and slow-trap density near the interface.     

Absolute coverage of C2H2 and C2H4 on Pt(111)

Quantitative XPS measurements have been performed in order to determine the absolute coverage of acetylene and ethylene adsorbed on Pt(111) showing a 2 × 2 LEED pattern. This LEED pattern has so far been attributed to a 2 × 2 superstructure with a coverage of 0.25. A quantitative evaluation of the C(1s) peak intensities for these adsorbed layers in comparison with adsorbed CO shows that the coverage is 0.5 instead of 0.25. Therefore the 2 × 2 LEED pattern should be assigned to a 2 × 1 superstructure in three domains rather than a 2 × 2 superstructure.     

Electron correlation in the second Landau level: a competition between many nearly degenerate quantum phases

At a very low-temperature of 9 mK, electrons in the second Landau level of an extremely high-mobility two-dimensional electron system exhibit a very complex electronic behavior. With a varying filling factor, quantum liquids of different origins compete with several insulating phases leading to an irregular pattern in the transport parameters. We observe a fully developed nu=2+2/5 state separated from the even-denominator nu=2+1/2 state by an insulating phase and a nu=2+2/7 and nu=2+1/5 state surrounded by such phases. A developing plateau at nu=2+3/8 points to the existence of other even-denominator states.     

Infinite period and Hopf bifurcations for the pH-regulated oscillations in a semibatch reactor (H(2)O(2)-Cu(2+)-S(2)O(2-) (3)-NaOH system)

Dynamic behavior of the pH-regulated oscillations has been studied for the hydrogen peroxide oxidation of thiosulfate ions in the presence of trace amounts of copper(II) ions in a semibatch reactor. A solution of 0.08 M Na(2)S(2)O(3) and 0.112 M NaOH was flowed at 0.160 mL/min into 300 mL of solution containing the H(2)O(2) and Cu(2+) in a vessel. There exists a critical value of the H(2)O(2) or Cu(2+) concentrations below which the system does not oscillate. The oscillations appear due to an infinite period bifurcation at low initial concentrations of the H(2)O(2). The initial concentration of Cu(2+) may be considered as a bifurcation parameter in this case. Increase of the initial hydrogen peroxide concentration causes the pH-regulated oscillations through a nondegenerate supercritical Hopf bifurcation. The classification of bifurcations is based on the analysis of the behavior of oscillation amplitude and period at different initial concentrations of the H(2)O(2) and Cu(2+). Our results show a possibility to distinguish different scenarios for the appearance of transient oscillations in semibatch experiments. (c) 1996 American Institute of Physics.     

与铷（5^2S1／2）原子碰撞产生的铷7^2D态精细结构转移截面

本文报道使用蒸汽泡和两光子两步激发方法,测量原子激发态敏化荧光I_(3/2)~1和直接荧光I_(3/2)~2其与温度的关系,得到与基态(5~2S_(1/2)铷原子碰撞产生的铷7~2D_(5/2)→7~2D_(3/2)和7~2D_(3/2)→7~2D_(5/2)精细结构转移截面分别为:σ_(fs)=4.7×10~(-13)cm~2、σ_(fs)~’=7.0×10~(-13)cm~2;碰撞转移出7~2D双态的转移截面σ_(tr)(5/2)=0.62×10~(-13)cm~2.由计算的7~2D态几何截面σ_(geom)能够相对很好地描述σ_(fs)和σ_(fs)~’的数量级.     

Phase Manipulation between c(4 x 2) and p(2 x 2) on the Si(100) surface at 4.2 K

Phase manipulation between c(4x2) and p(2x2) on the Si(100) surface has been demonstrated at 4.2 K for the first time using a low-temperature scanning tunneling microscope. We have discovered that it is possible to change the c(4x2) surface into the p(2x2) surface, artificially, through a flip-flop motion of the buckling dimers by using a sample bias voltage control. Also, scanning at a negative bias voltage or applying a pulse voltage can restore the c(4x2) surface. The STM images as a function of bias voltage and tunneling current reveal the interesting dynamics of the buckling dimers on the long debated surface. Our results will show that energetic tunneling electrons are most likely responsible for the observed phase transition from c(4x2) to p(2x2).     

NCl(a1Δ)/I（2P3/2）传能体系的实验研究

 利用微波放电Cl₂/He等离子体作为Cl源，对反应NCl(a¹Δ) + I(²P_3/2)→NCl(X³Σ) + I(²P_1/2)进行了实验研究，得到了较大的I(²P_1/2)自发辐射荧光信号，检测到NCl(a¹Δ，b¹Σ)自发辐射荧光光谱在存在少量I(²P_1/2)下发生的显著变化，其中NCl(a¹Δ)自发辐射荧光信号降低，同时由于I(²P_1/2)的作用，NCl(b¹Σ)自发辐射荧光信号大幅度增加。在考察各反应气体流量对I(²P_1/2)自发辐射荧光信号的影响时发现，在本次实验条件下，各种气体的最佳流量：He为1～4mmol/s, I₂为0.01～0.03mmol/s, Cl₂为1.0mmol/s左右,而HN₃流量略大于Cl₂流量时信号升高幅度开始变缓，约为Cl₂流量的两倍时信号不再有显著的变化。     

Influence of primary frequencies ratio on distortion product otoacoustic emissions amplitude. II. Interrelations between multicomponent DPOAEs, tone-burst-evoked OAEs, and spontaneous OAEs

Distortion product otoacoustic emissions (DPOAEs) are used widely in humans to assess cochlear function. It is well known that 2f1-f2 DPOAE amplitude increases as the f2/f1 ratio increases from 1.0 to about 1.20, and then decreases as the f2/f1 ratio increases above 1.20, showing an amplitude ratio function, which is thought to be related to cochlear filtering properties. Different lower sideband DPOAEs are believed to show the same amplitude ratio functions as the 2f1-f2 DPOAE, with a magnitude peak situated at a constant DPOAE frequency relative to f2. More recently, several studies have suggested the involvement of a DPOAE component coming from its own distortion product place as well as the DPOAE component coming from the f2 place. To investigate DPOAE generation sites and the importance of the DPOAE frequency place, amplitude ratio functions of 2f1-f2, 3f1-2f2, 4f1-3f2 and 2f2-f1, 3f2-2f1, 4f2-3f1 DPOAE components have been systematically studied in 18 normally hearing subjects, using an f2 fixed, f1 sweep method, and an f1 fixed, f2 sweep method, at ten different f2 frequencies. Results show a dependency of the distortion magnitude peak on f2 frequency for each lower sideband DPOAE, and a small frequency shift of the distortion peak for the high order lower sideband DPOAE components. Strong correlation between the different lower sideband DPOAE amplitude were obtained, whether they were recorded with the same f1 (and a different f2) or with the same f2 (and a different f1), suggesting that lower side-band DPOAE amplitude does not depend on small variations in the f2 frequency. Moreover, correlations between DPOAE amplitude and tone-burst evoked otoacoustic emissions (TBOAEs) are highly significant for TBOAEs centered at the f2 frequency and at 1/2 octave below the f2 frequency, suggesting some degree of importance of the cochlear status at frequencies below f2 in DPOAE amplitude. Subjects presenting spontaneous otoacoustic emissions showed a greater lower sideband DPOAE amplitude recorded for low f2/f1 ratios, and a distortion magnitude peak shifted towards higher frequencies. The best correlation between upper sideband DPOAE amplitude and lower sideband DPOAE amplitude occurred for lower sideband DPOAEs generated by an f2 frequency 1/2 octave to 1 octave below the primaries used to generate upper sideband DPOAEs, suggesting a site of generation basal to f2 for the upper sideband DPOAEs. Correlations between TBOAE amplitude and upper sideband DPOAE amplitude agreed with a site of upper sideband DPOAE generation basal to f2, and which would move with the DPOAE frequency itself.