Two-color optical and mid-IR quantum-well laser

A method of mid-IR generation in optical quantum-well heterolasers is considered. In contrast to the previous studies, it is proposed to invert the inhomogeneously broadened low-frequency laser transition only in a narrow spectral range containing the entire interval of its resonance interaction with the amplified mid-IR field. This approach allows to reduce the threshold pump density to experimentally attainable values even at room temperature. Original Russian Text ? V.A. Kukushkin, 2009, published in Izvestiya Rossiiskoi Akademii Nauk. Seriya Fizicheskaya, 2009, Vol. 73, No. 1, pp. 109–114.     

Tunnel injection transistor laser for optical interconnects

Transistor laser (TL) is already an established potential candidate for high speed optical interconnects and present day optical communication networks. This paper investigates theoretically the possibility of having lower base threshold current density and enhanced modulation bandwidth by inserting a tunnel injection structure in a TL having multiple quantum wells (MQW) in the base of the heterojunction bipolar transistor. Transfer of injected charge carriers from bulk to low dimensional nano-structure is assumed to occur via virtual energy states, which contributes to the terminal current. Small signal modulation response is obtained by solving the Statz–De Mars laser rate equations. The optimum threshold base current, confinement of carrier, light power outputs etc. are estimated for three QWs positioned at distances of 39, 59, and 79 nm from the emitter-base junction across the base. Incorporation of tunneling structure substantially lowers the base threshold current and increases the modulation bandwidth as compared to usual MQW transistor laser structure. The changes are more prominent with increasing tunneling probability.     

Analysis and improvement of optical frequency response in a long wavelength transistor laser

Charge control model and rate equations have been exploited for the first time in order to glean the optical frequency response of a long-wavelength heterojunction bipolar transistor laser. For a 1.56 μm N-InP/p-InAlGaAs/N-InP fabricated transistor laser with a single quantum well, the optical bandwidth is estimated using this model. All parameters of the mentioned model have been computed for this new type of long wavelength transistor laser. It has been found that frequency response of this optoelectronic device has a 29 dB resonance peak which is not very desirable and is so higher than traditional GaAs transistor lasers. Furthermore, we have illustrated that the resonance peak will decrease and the optical bandwidth will increase, if we increase the width of the quantum well. Finally, we have analyzed that how base width affects on the optical bandwidth and resonance peak of frequency response. It has been proved that, there is a trade-off between larger bandwidth and lower resonance peak for base width effect.     

Pulse characterisation of a quantum-well mode-locked laser diode by two-photon absorption frequency-resolved optical gating

The intensity and phase of ultrashort optical pulses from a 40-GHz monolithic InGaAsP quantum-well heterostructure laser diode are retrieved for the first time from two-photon absorption pulse spectrograms. The pulse traces showing the mode-locked pulses from the laser are distorted due to ultrafast absorption saturation associated with quantum-confined Stark excitons. It is suggested from comparison between experimental time-integrated spectrum and reconstructed pulse spectrum that the mode-locked pulses are formed only from a part of the longitudinal modes in the laser cavity.     

Influence of pumping laser bandwidth on the quantum fluctuation chracteristic of non-degenerate optical parametric amplifier

Usually the quantum fluctuation characteristic of the non-degenerate optical parametric amplifier is analysed under the assumption of monochromatic pumping. However, in experiments, the driving beam with finite bandwidth is used to obtain the non-degenerate signal and idler beam amplifications. On account of that, we derive an analytical solution for the non-degenerate optical parametric amplification system with finite bandwidth laser pumping, and evaluate the associated quantum fluctuation. Finally, the application of the V₁ criterion to the bipartite entanglement is discussed.     

Gain-bandwidth trade-off in a transistor laser: quantum well dislocation effect

The Authors report an analytical model to investigate optoelectronic characteristics reliance of a Transistor Laser on Quantum Well Location. Using simulated base recombination lifetime, optical frequency response for different quantum-well locations extracted. Slipping the well towards the collector, improves the optical bandwidth where a maximum of ≈54 GHz is observed. No resonance peak, limiting factor in diode lasers, is occurred in this enhancement method. Analyzing current gain (β) as a function of the quantum well location, exhibits a decrease in β when the well moved in the direction of the collector so that a trade-off between optical and electrical properties of transistor laser is evident. The trade-off is utilized in conjunction with previously reported experimental researches to find an optimum place of quantum well for desired performance.     

Influence of pumping laser bandwidth on the quantum fluctuation chracteristic of a non-degenerate optical parametric amplifier

Usually the quantum fluctuation characteristic of a non-degenerate optical parametric amplifier is analysed under the assumption of monochromatic pumping. However, in experiments, a driving beam with finite bandwidth is used to obtain the non-degenerate signal and idler beam amplifications. On account of that, we derive an analytical solution for the non-degenerate optical parametric amplification system with finite bandwidth laser pumping, and evaluate the associated quantum fluctuation. Finally, the application of the V1 criterion to bipartite entanglement is discussed.     

Resonance optical spectroscopy of long-period quantum-well structures

Theory of specular light reflection from long-period quantum-well structures taking into account the exciton contribution to dielectric polarization has been developed for an arbitrary relation between the background refractive index in the well, n _a, and barrier-material refractive index nb. General expressions for the optical reflection and transmission coefficients for a structure with N equidistant quantum wells are derived with the use of the Green’s function and transfer matrix methods. Normal and oblique light reflectance spectra from II-VI-based heterostructures were found to reveal a bright interference pattern caused by the difference between n _a and n _b. A comparison of the theory with experiment has yielded the dispersion of n _a and n _b within a broad wavelength range and the parameters of the quasi-two-dimensional heavyhole exciton (e1-hh1), namely, the resonant frequency and the radiative and nonradiative damping rates. Reflectance spectra from resonant Bragg and quasi-Bragg structures with real exciton parameters are calculated, and the effect on these spectra of the refractive-index difference and the deviation from the Bragg condition is analyzed. Fiz. Tverd. Tela (St. Petersburg) 39, 2072–2078 (November 1997)     

Thermal optical effect in axisymmetric structural laser resonator

In order to study the thermal optical effect (TOE) resulting from the axisymmetrical sources of thermal energy at the output mirror of CO₂ laser, the Heat Conduction Poisson Equation (HCPE) has been solved in the output mirror. Then the temperature distribution is given. The temperature variations will cause the surface distortion and the phase shift at the output mirror. Therefore, the output laser beam will be subject to thermal optical distortion and phase change. The numerical examples are to confirm our calculated results.     

Dynamic theory of an optical transistor

The amplification of a modulation by an optical transistor is shown to depend on the modulation frequency. At high frequency there is no amplification whereas at low frequency the expected amplification occurs. The critical frequency which separates these two domains depends on the modulation amplitude. These results are derived analytically for purely dispersive optical bistability in the bad cavity case. The modulation can be applied to the holding beam, to the refraction index or to the detuning with similar results for the output field intensity.     

锗硅异质结晶体管单粒子效应激光微束模拟

对国产锗硅异质结双极晶体管(SiGe HBT)进行了单粒子效应激光微束辐照试验,观测SiGe HBT单粒子效应的敏感区域,测试不同外加电压和不同激光能量下SiGe HBT集电极瞬变电流和电荷收集情况,并结合器件结构对试验结果进行分析。试验结果表明:国产SiGe HBT位于集电极/衬底结内的区域对单粒子效应敏感,波长为1064 nm的激光在能量约为1.5 nJ时诱发SiGe HBT单粒子效应,引起电流瞬变。入射激光能量增强,电流脉冲增大,电荷收集量增加;外加电压增大,电流脉冲的波峰增大;SiGe HBT的单粒子效应与外加电压大小和入射激光能量都相关,电压主要影响瞬变电流的峰值,而电荷收集量主要依赖于入射激光能量。     

激光线宽和光强对同位素原子选择光电离的影响

本文研究了非单色(有限带宽)激光场与同位素原子体系相互作用的激发光电离过程. 采用混沌场随机模型描述激光场,用密度矩阵理论和Fokker-Planck方程方法首次给出了非单色激光场与多能级原子相互作用的激发动力学方程. 针对三能级同位素原子体系,讨论了激光线宽和激光光强对同位素原子电离概率和激光同位素分离过程中分离选择性的影响. 关键词： 激光同位素分离 激发动力学方程 激光线宽 Rabi频率     

锗硅异质结晶体管单粒子效应激光微束模拟

对国产锗硅异质结双极晶体管(SiGe HBT)进行了单粒子效应激光微束辐照试验,观测SiGe HBT单粒子效应的敏感区域,测试不同外加电压和不同激光能量下SiGe HBT集电极瞬变电流和电荷收集情况,并结合器件结构对试验结果进行分析。试验结果表明：国产SiGe HBT位于集电极/衬底结内的区域对单粒子效应敏感,波长为1064 nm的激光在能量约为1.5 nJ时诱发SiGe HBT单粒子效应,引起电流瞬变。入射激光能量增强,电流脉冲增大,电荷收集量增加;外加电压增大,电流脉冲的波峰增大;SiGe HBT的单粒子效应与外加电压大小和入射激光能量都相关,电压主要影响瞬变电流的峰值,而电荷收集量主要依赖于入射激光能量。     

Simulation of optical field in laser resonators cavity by eigenvector method

In this paper, an Eigenvector method (EM) for the calculation of optical resonator modes and beam propagation is introduced, in which the transit matrix of an optical resonator is obtained by dividing the mirror into finite grids based on the Fresnel–Kirchoff diffractive integral equation. Then, the eigenvectors, representing the multimode characteristics of the resonator, can be calculated by solving the integral matrix eigenequation. The merits of EM include that the considerably simpler procedure of solution of eigenvectors of the matrix eigenequation replaces the complicated iteration in traditional methods, and there is no dependence on the initial field distribution, and a number of modes can be derived once and the discrimination capability of the resonator can be evaluated easily. The examples using EM to simulate con-focal resonators with small or large Fresnel numbers are given, and the calculated results, well matched with Fox–Li method or Lagueree–Gaussian approximation analytical solution, prove that EM is highly feasible and reasonable.     

Orientational dependence of hole effective masses in quantum-well laser structures

Valence energy subbands and hole effective masses for quantum-well structures have been calculated, using GaInAs–InGaAsP and GaAs–AlGaAs material systems as an example. A Luttinger–Kohn 4 ×  4 hamiltonian with heavy-hole and light-hole band mixing was used in the calculations. Systematic numerical results have been presented for a range of growth directions, material parameters and quantum well widths.     

Synergistic effect of total ionizing dose on single event effect induced by pulsed laser microbeam on SiGe heterojunction bipolar transistor

The synergistic effect of total ionizing dose(TID) on single event effect(SEE) in SiGe heterojunction bipolar transistor(HBT) is investigated in a series of experiments. The SiGe HBTs after being exposed to 60 Co g irradiation are struck by pulsed laser to simulate SEE. The SEE transient currents and collected charges of the un-irradiated device are compared with those of the devices which are irradiated at high and low dose rate with various biases. The results show that the SEE damage to un-irradiated device is more serious than that to irradiated SiGe HBT at a low applied voltage of laser test. In addition, the g irradiations at forward and all-grounded bias have an obvious influence on SEE in the SiGe HBT, but the synergistic effect after cutting off the g irradiation is not significant. The influence of positive oxide-trap charges induced by TID on the distortion of electric field in SEE is the major factor of the synergistic effect. Moreover, the recombination of interface traps also plays a role in charge collection.     

Quartz optical filter for wavelength selection of frequency-doubled laser based on optical rotatory dispersion effect

Based on the optical rotatory dispersion effect, an optical filter for selecting the second harmonic of a frequency-doubled laser is constructed from quartz in combination with polarizers. The operating principle is analyzed by matrix formulation, and the result indicates that the second harmonic of a frequency-doubled laser will be obtained when the rotation angle has a difference of (2n + 1)π/2 (n = 0, 1, 2, 3,… ) between the two polarizations of the second-harmonic laser and the fundamental laser. The spectrum of the output laser is taken by the AQ-6315A spectrometer, and the experimental results are in good agreement with the theoretical results.     

Tunable double-beam optical bistability in an asymmetric double quantum-well system

We have proposed a scheme for double-beam optical bistability in a tunnel-coupled asymmetric double quantum-well driven by two optical fields circulating inside two independently unidirectional ring cavities. In contrast to the single-cavity case where single-photon saturated absorption and self Kerr-nonlinearity are dominant, the two-photon absorption and cross phase modulation can be enhanced via tunneling induced interference and have an important influence to the formation of bistability. The bistable behavior can be controlled effectively via the system parameters such as the input and detuning of control field, the detuning of the probe field, Fano interference strength and cooperation parameter. Furthermore, the proposed scheme has the ability to manipulate the outputs of two optical cavities simultaneously. Due to the flexible design of semiconductor quantum well, our scheme is more practical than atomic system, therefore it can be utilized to achieve dual all-optical switching which has application in optical communication and computing.