Broadband 180/spl deg/ bit phase shifter using a /spl lambda//2 coupled line and parallel /spl lambda//8 stubs

In this paper, a broadband 180/spl deg/ bit phase shifter using a new switched-network was presented. The new network is composed of a /spl lambda//2 coupled line and parallel /spl lambda//8 open and short stubs, which are shunted at the edge points of a coupled line, respectively. According to a desired phase shift, it provides a controllable phase dispersive characteristic by the proper determination of Z/sub m/,Z/sub s/, and R values. The 180/spl deg/ bit phase shifter operated at 3 GHz was fabricated and experimented using design graphs which provide the required Z/sub m/,Z/sub s/ values, and I/O match and phase bandwidths. The experimental performances showed broadband characteristics.     

A miniaturized net-type microstrip bandpass filter using /spl lambda//8 resonators

A novel miniaturized three-pole net-type bandpass filter using /spl lambda//8 resonators has been proposed. Asymmetric frequency characteristics of this filter exhibit a single transmission zero on the lower side of the passband at finite frequency, which is attributed to multi-path effect. Full-wave simulator IE3D is used to extract the coupling coefficients and external quality factor in order to determine the physical dimensions of this filter. The measured results are in good agreement with the simulated predictions. The overall size of the filter is only about 0.22/spl lambda//sub g/ by 0.2 /spl lambda//sub g/. As a result, the filter has not only a small size but also a wider upper stopband up to 6.5 f/sub 0/.     

Protecting a power-laser diode from retroreflections by means of a fiber /spl lambda//4 retarder

A quarter-wave retarder made by a small loop of fiber on the laser pigtail is an effective means to protect the laser from retroreflections. Suppression factors of about 20 dB have been achieved with negligible insertion losses. An example of application is given. A method to measure the isolation is also presented.     

Proposed enhancement of side-mode suppression ratio in /spl lambda//4 shifted distributed feedback lasers with nonuniform diffused quantum wells

An enhancement of the side mode suppression ratio, by utilizing interdiffused quantum wells, of a /spl lambda//4 shifted distributed feedback laser is demonstrated theoretically. It is found that by introducing a diffusion step along the longitudinal direction of the quantum-well active region, the suppression ratio can be improved significantly for large /spl kappa/L (>2.6) devices. The maximum power for single longitudinal mode operation is increased by more than 50 mW.     

Fabrication of MOD-derived YBCO films on [001]LaAlO/sub 3/ and their application to /spl lambda//4 CPW SIR BPFs

Chemically derived epitaxial thin films of YBa/sub 2/Cu/sub 3/O/sub 7-/spl delta// (YBCO) are fabricated on [001]LaAlO/sub 3/ substrates by the metalorganic-deposition (MOD) process, which has advantages of high quality, nonvacuum, low-cost, and large-scale production of high-T/sub c/ superconducting films. The MOD-derived YBCO films have a sharp transition at the critical temperature (90.4 K) and a high-quality film with a surface resistance of 0.13 m/spl Omega/ (30 K, 9.98 GHz) is obtained. As a microwave application, simple and compact bandpass filters (BPFs) using /spl lambda//4 coplanar-waveguide. stepped-impedance resonators are demonstrated on the YBCO films. A two-stage Chebyshev BPF of center frequency of 5.731 GHz, bandwidth of 135 MHz, and insertion loss of 0.29 dB with little input power dependency in a power range less than 10 dBm is realized on the film.     

A 4.15 kV 9.07-m/spl Omega//spl middot/cm/sup 2/ 4H-SiC Schottky-barrier diode using Mo contact annealed at high temperature

In this letter, we report the fabrication of high-voltage and low-loss 4H-SiC Schottky-barrier diodes (SBDs) with a performance close to the theoretical limit using a Mo contact annealed at high-temperature. High-temperature annealing for the Mo contact was found to be effective in controlling the Schottky-barrier height at 1.2-1.3 eV without degradation of n-factor and reverse characteristics. We successfully obtained a 1-mm/sup 2/ Mo-4H-SiC SBD with a breakdown voltage (V/sub b/) of 4.15 kV and a specific on resistance (R/sub on/) of 9.07 m/spl Omega//spl middot/cm/sup 2/, achieving a best V/sub b//sup 2//R/sub on/ value of 1898 MW/cm/sup 2/. We also obtained a 9-mm/sup 2/ Mo-4H-SiC SBD with V/sub b/ of 4.40 kV and R/sub on/ of 12.20 m/spl Omega//spl middot/cm/sup 2/.     

基于EBG结构的新型超宽带低噪声电源/地平面设计

将电磁带隙（EBG）结构加载在电源/地平面之间,依据理论分析对模型结构以及各项参数进行优化.设计出抑制深度为-80 dB、禁带宽度为10 GHz的超宽禁带电源/地平面,在拥有优良抑制电磁干扰能力的同时,也保证了信号的完整性.在禁带内,该平面可以有效地抑制电路之间特别是共用电源/地平面的数字电路与射频电路之间所引起的电磁干扰.仿真实验表明,该设计取得了理想的效果.     

Efficient amplification using the /sup 4/F/sub 3/2//spl rarr//sup 4/I/sub 9/2/ transition in Nd-doped silica fiber

Amplification characteristics of the three-level /sup 4/F/sub 3/2//spl rarr//sup 4/I/sub 9/2/ transition in Nd-doped silica glass fiber are investigated under strong signal saturation and high pump power (150 mW). Aluminum codoped Nd-silica fibers exhibit strong superfluorescent behavior in the four-level /sup 4/F/sub 3/2//spl rarr//sup 4/I/sub 11/2/ transition which limits the optical conversion efficiency into the three-level transition. Ge-doped silica fibers do not exhibit this limitation and can efficiently amplify in the three-level transition with current laser-diode pump technology.     

Highly efficient xDSL line drivers in 0.35-/spl mu/m CMOS using a self-oscillating power amplifier

The design of two highly efficient line drivers in a digital 0.35-/spl mu/m, 3.3-V technology are presented. The self-oscillating power amplifier (SOPA) architecture has been developed in order to obtain a high efficiency for systems with a high crest factor like discrete multitone modulated xDSL modems. The SOPA architecture is an unclocked switching-type line driver. By using self-oscillation and noise-shaping, a high signal linearity can be obtained for low over-switching ratios. By coupling two SOPA line drivers with a signal transformer, the two limit cycle oscillations are pulled toward synchronization. This gives an important mean switching frequency suppression toward the line. The need for an extra filter dealing with the mean switching frequency is in that way heavily relaxed. A zeroth-order SOPA and a third-order SOPA are prototyped. The zeroth-order line driver meets ADSL-Lite specifications with a missing tone power ratio (MTPR) of 41 dB for an 800-kHz bandwidth. The maximum efficiency is 41%. The third-order version meets ADSL and VDSL specifications with an MTPR of 56 dB and an 8.6-MHz bandwidth. An efficiency of 47% was measured for an ADSL signal with a crest factor >5.     

A novel high-/spl kappa/ SONOS memory using TaN/Al/sub 2/O/sub 3//Ta/sub 2/O/sub 5//HfO/sub 2//Si structure for fast speed and long retention operation

A novel high-/spl kappa/ silicon-oxide-nitride-oxide-silicon (SONOS)-type memory using TaN/Al/sub 2/O/sub 3//Ta/sub 2/O/sub 5//HfO/sub 2//Si (MATHS) structure is reported for the first time. Such MATHS devices can keep the advantages of our previously reported TaN/HfO/sub 2//Ta/sub 2/O/sub 5//HfO/sub 2//Si device structure to obtain a better tradeoff between long retention and fast programming as compared to traditional SONOS devices. While at the same time by replacing hafnium oxide (HfO/sub 2/) with aluminum oxide (Al/sub 2/O/sub 3/) for the top blocking layer, better blocking efficiency can be achieved due to Al/sub 2/O/sub 3/'s much larger barrier height, resulting in greatly improved memory window and faster programming. The fabricated devices exhibit a fast program and erase speed, excellent ten-year retention and superior endurance up to 10/sup 5/ stress cycles at a tunnel oxide of only 9.5 /spl Aring/ equivalent oxide thickness.     

A 50-MS/s (35 mW) to 1-kS/s (15 /spl mu/W) power scaleable 10-bit pipelined ADC using rapid power-on opamps and minimal bias current variation

A novel rapid power-on operational amplifier and a current modulation technique are used in a 10-bit 1.5-bit/stage pipelined ADC in 0.18-/spl mu/m CMOS to realize power scalability between 1 kS/s (15 /spl mu/W) and 50 MS/s (35 mW), while maintaining an SNDR of 54-56 dB for all sampling rates. The current modulated power scaling (CMPS) technique is shown to enhance the power scaleable range of current scaling by 50 times, allowing ADC power to be varied by a factor of 2500 while only varying bias currents by a factor of 50. Furthermore, the nominal power is reduced by 20%-30% by completely powering off the rapid power-on opamps during the sampling phase in the pipeline's sample-and-holds.     

An efficient method for calculating bounces in the irregular power/ground plane structure with holes in high-speed PCBs

The eigenmode expansion method (EEM) is a convenient technique for characterizing a power/ground (P/G) plane pair structure. The requirements of the plane pair's shape, however, and a double-infinite series in its equation limit its applications. To overcome its disadvantages and extend its applications, this paper proposes some techniques for the EEM and makes some modifications to it. First, by employing the newly presented inverted composition method and the segmentation method, the improved EEM can be used to characterize a holey P/G plane pair with irregular shapes. Second, by employing a trigonometric Fourier series and a particular Pade approximation method-the /spl eta/-algorithm, the double-infinite series in EEM can be changed into a single one and its convergence can be accelerated apparently so that the computation efficiency of the EEM is greatly improved. An example is considered to compare the numerical data of the new EEM with corresponding measurement results, thus demonstrating the good accuracy. The computation time of the proposed method is compared with that of the finite-element method (FEM), which shows that the new method has higher efficiency.     

A new method to support UMTS/WLAN vertical handover using SCTP

This article proposes a new method to facilitate seamless vertical handover between wide area cellular data networks such as UMTS and WLANs using the stream control transmission protocol (SCTP). The multihoming capability and dynamic address configuration extension of SCTP are applied in UMTS/WLAN overlay architecture to decrease handover delay and improve throughput performance. Unlike techniques based on mobile IP or session initiation protocol, the SCTP-based vertical handover scheme does not require the addition of components such as home/foreign agents or a SIP server to existing networks. Therefore, the proposed scheme provides a network-independent solution preferred by service providers. Performance evaluations are presented to demonstrate the effectiveness of the proposed scheme.     

Design of Luenberger state observers using fixed-structure H/sub /spl infin// optimization and its application to fault detection in lane-keeping control of automated vehicles

Lane-keeping control forms an integral part of fully automated intelligent vehicle highway systems (IVHS) and its reliable operation is critical to the operation of an automated highway. We present the design of a fault detection filter for the lane-keeping control systems onboard vehicles used by California-PATH, USA in its automated highways program. We use a Luenberger structure for the fault detection filters and tune the observer gains based on an H/sub /spl infin//-based cost. Such a choice of cost was motivated by the need to explicitly incorporate frequency-domain-based performance objectives. The linear matrix inequality (LMI)-based formulation of an H/sub /spl infin// optimization problem of Luenberger state observers does not allow for the augmentation with dynamic performance weightings in the optimization objective, since it makes the problem a nonconvex optimization problem. We present an algorithm to locally solve the problem of the design of Luenberger state observers using H/sub /spl infin// optimization by transforming the problem into an H/sub /spl infin// static output feedback controller problem. Experimental results demonstrate the efficacy of the tuning methodology by comparing the fault detection performance of filters that use H/sub /spl infin// Luenberger observers versus those that use Kalman filters. Implementation issues of the observers are also discussed.     

一种在接入网中实现OCDMA/DWDMA的新方法

研究了光码分多址接入/密集波分复用系统应用于接入网的可行性,分析了使用电编解码器 OCDMA 系统实现码分多址的过程,对激光器谱线宽度的要求和一个 OCDMA 码组的用户使用一个 WDM 信道的可能性。由此得到当 OCDMA 和 DWDM 用现有的成熟技术在接入网中相结合,接入网的接入数量和数据容量将更容易满足要求。     

A silicon/indium arsenide source structure to suppress the parasitic bipolar-induced breakdown effect in SOI MOSFETs

We introduce Silicon/indium arsenide (Si/InAs) source submicron-device structure in order to minimize the impact of floating body effect on both the drain breakdown voltage and single transistor latch in ultra thin SOI MOSFETs. The potential barrier of valence band between source and body reduces by applying the Indium Arsenide (InAs) layer at the source region. Therefore, we can improve the drain breakdown by suppressing the parasitic NPN bipolar device and the hole accumulation in the body. As confirmed by 2D simulation results, the proposed structure provides the excellent performance compared with a conventional SOI MOSFET thus improving the reliability of this structure in VLSI applications.     

A new method to characterize the thermomechanical response of multilayered structures in power electronics

To record the coefficient of thermal expansion (CTE) of metallized surfaces on Si- substrates with different thickness ratios, a new testing method is introduced. Laseroptical sensors based on the speckle correlation method were applied to determine non-contacting thermal strain values of multilayered structures with high strain resolution. This technique is usually used for the determination of mechanical properties of freestanding foils and wires performing tensile tests. It could be shown, that the thickness of substrate clearly influences the thermal expansion coefficient of the metallization layer.     

A new Schmitt trigger circuit in a 0.13-/spl mu/m 1/2.5-V CMOS process to receive 3.3-V input signals

A new Schmitt trigger circuit, which is implemented by low-voltage devices to receive the high-voltage input signals without gate-oxide reliability problem, is proposed. The new proposed circuit, which can be operated in a 3.3-V signal environment without suffering high-voltage gate-oxide overstress, has been fabricated in a 0.13-/spl mu/m 1/2.5-V 1P8M CMOS process. The experimental results have confirmed that the measured transition threshold voltages of the new proposed Schmitt trigger circuit are about 1 and 2.5 V, respectively. The new proposed Schmitt trigger circuit is suitable for mixed-voltage input-output interfaces to receive input signals and reject input noise.     

A new method to characterize border traps in submicron transistors using hysteresis in the drain current

In this paper, a new method for measuring border trap density (n/sub BT/) in submicron transistors using hysteresis in the drain current is proposed. This method is used to measure energy and spatial distribution of border traps in jet vapor deposited (JVD) metal-silicon nitride-semiconductor field effect transistors (MNSFETs). The drain current transient varies linearly with logarithmic time suggesting that tunneling to and from the spatially uniform border traps is the dominant charge exchange mechanism. Using a feedback mechanism gate voltage transients are obtained from which n/sub BT/ is calculated. The prestress energy distribution in JVD MNSFETs is found to be uniform whereas the post-stress energy distribution shows a peak near the midgap.