Effect of doping by boron,carbon, and nitrogen atoms on the magnetic and photocatalytic properties of anatase

The effect of doping of titanium dioxide with the anatase structure by boron, carbon, and nitrogen atoms on the magnetic and optical properties and the electronic spectrum of this compound has been investigated using the ab initio tight-binding linear muffin-tin orbital (TB-LMTO) band-structure method in the local spin density approximation explicitly including Coulomb correlations (LSDA + U) in combination with the semiempirical extended Hückel theory (EHT) method. The LSDA + U calculations of the electronic structure, the imaginary part of the dielectric function, the total magnetic moments, and the magnetic moments at the impurity atoms have been carried out. The diagrams of the molecular orbitals of the clusters Ti₃ X (X = B, C, N) have been calculated and the pseudo-space images of the molecular orbitals of the clusters have been constructed. The effect of doping on the nature and origin of photocatalytic activity in the visible spectral range and the specific features of the generation of ferromagnetic interactions in doped anatase have been discussed based on the analysis of the obtained data. It has been shown that, in the sequence TiO_{2 ? y} N _y → TiO_{2 ? y} C _y → TiO_{2 ? y} B _y (y = 1/16), the photocatalytic activity can increase with the generation of electronic excitations with the participation of impurity bands. The calculated magnetic moments for boron and nitrogen atoms are equal to 1 μ_B, whereas the impurity carbon atoms are nonmagnetic.     

Colossal room-temperature magnetoresistance in thin La<Subscript>1−<Emphasis Type="Italic">x</Emphasis></Subscript>Ag<Subscript>y</Subscript>MnO<Subscript>3</Subscript> epitaxial films

The first thin La_1?xAg_yMnO₃ epitaxial films (_y ≤ x) were grown on SrTiO₃ (110) substrates with silver present in the ionized state (Ag⁺) only. The Curie temperatures T_C of the compositions with x = y = 0.05, x = y = 0.1, and x = 0.3 and y = 0.27 crystallizing in the hexagonal structure \(R\bar 3c\) above or close to room temperature. The temperature dependences of electrical resistivity ρ and of magnetoresistance ¦Δρ/ρ/¦ = ¦(ρ_H ? ρ _H = 0)/ρ_H=0¦ pass through maxima near T_C, with the magnetoresistance being negative and reaching colossal values of ～7–20% in a magnetic field H = 8.2 kOe not only at T_C but also at room temperature. The magnetic moment per formula unit as derived from the saturation magnetization at T = 5 K is substantially smaller than expected for complete ferromagnetic ordering. The magnetization in fields of up to 6 kOe depends on the actual sample cooling conditions, and the hysteresis loop of a field-cooled sample is displaced along the H axis by ΔH. The above properties can be accounted for by the fact that the films are in a two-phase magnetic (ferromagnetic-antiferromagnetic) state induced by strong s-d exchange. The maximum value of Δ H was used to calculate the energy of exchange coupling between the ferromagnetic and antiferromagnetic parts of a sample.     

Atomic and Electronic Structures of Metal-Rich Noncentrosymmetric ZrO<Subscript><Emphasis Type="Italic">x</Emphasis></Subscript>

The atomic and electronic structures of metal-rich noncentrosymmetric zirconium oxide synthesized by the ion beam sputtering of a metallic target in an oxygen atmosphere has been studied by X-ray photoelectron spectroscopy, Raman scattering, spectral ellipsometry, and quantum-chemical simulation. It has been established that ZrO_{x < 2} consists of ZrO₂, metallic Zr, and zirconium suboxides ZrO_y. The stoichiometry parameter of ZrO_y has been estimated. It has been shown that the optical properties of ZrO_{x < 2} are determined by metallic Zr. A model of fluctuation of the width of the band gap and a potential for electrons and holes in ZrO_{x < 2} based on spatial fluctuations of the chemical composition has been proposed.     

Extreme Electromechanical Characteristics and Microstructural Features of Ferro-Piezoceramics Based on Lead Titanate

Microstructural features and electrophysical parameters of a number of solid solutions based on PbTiO₃ are investigated. Solid solutions (Pb_{1–3/2x + z/2}Nd _x )(Ti_1–y–zMn _y Inz)O₃ and Pb_1–xCa _x Ti_1–y(W_1/2Co_1/2) _y O₃ with extreme values of the mechanical Q-factor and electromechanical anisotropy are chosen as the objects of investigation. The ferro-piezoceramic samples are obtained through conventional sintering and hot pressing. X-ray structural and microstructural studies are performed, and the complex elastic, dielectric, and piezoelectric parameters of experimental samples are measured. The frequency dependences of complex parameters of the experimental samples have been studied at frequencies of up to 40 MHz. It is established that the extreme values of the mechanical Q-factor and piezoelectric anisotropy of the investigated PbTiO₃-based solid solutions are due to microstructural features associated with the technological regimes of ferropiezoceramic fabrication.     

Computation of the electronic structure and direct-gap absorption spectra in Ge-rich Si<Subscript>1−x</Subscript> Ge<Subscript>x</Subscript>/Ge/Si<Subscript>1−x</Subscript>Ge<Subscript>x</Subscript> type-I quantum wells

This paper presents the results of conduction band discontinuities calculation for strained/relaxed Si_1?x Ge _x /Si_1?y Ge _y heterointerfaces in Γ _15C , Γ _2′C and L upper bands minima, as well as the room-temperature strained (vs. relaxed) band gaps deduced from the classical model-solid theory. Based upon the obtained data, we propose a type-I W-like Si_1?y Ge _y /Si_1?x Ge _x /Ge/Si_1?x Ge _x /Si_1?y Ge _y quantum wells heterostructure optimized in terms of compositions and thicknesses. Electronic states and wave functions are found by solving Schrödinger equation without and under applied bias voltage. An accurate investigation of the optical properties of this heterostructure is done by calculating the energies of the interband transitions and their oscillator strengths. Moreover, a detailed computation of the bias-voltage evolution of the absorption spectra is presented. These calculations prove the existence of type-I band alignment at Γ _2′C point in compressively strained Ge quantum wells grown on relaxed Ge-rich Si_1?y Ge _y buffers. The strong absorption coefficient (> 8 × 10³ cm^-1) and the large Stark effect (0.1 eV @ 2 V) of the Γ _2′C transitions thresholds open up perspectives for application of these heterostructures for near-infrared optical modulators.     

The influence of imperfection of the crystal lattice on the electrokinetic and magnetic properties of disordered titanium monoxide

The conductivity and magnetic susceptibility of disordered titanium monoxide TiO_y (0.920≤y≤1.262) containing vacancies in titanium and oxygen sublattices are investigated. For TiO_y monoxides with an oxygen content y≤1.069, the temperature dependences of the conductivity are described by the Bloch-Grüneisen function at a Debye temperature ranging from 400 to 480 K and the temperature dependences of the magnetic susceptibility are characterized by the contribution from the Pauli paramagnetism due to conduction electrons. The behavior of the conductivity and magnetic susceptibility of TiO_y monoxides with an oxygen content y≥1.087 is characteristic of narrow-gap semiconductors with nondegenerate charge carriers governed by the Boltzmann statistics. The band gap ΔE between the valence and conduction bands of TiO_y monoxides with y≥1.087 falls in the range 0.06–0.17 eV.     

Electronic effect of doped oxygen atoms in Bi2201 superconductors determined by scanning tunneling microscopy

Oxygen dopants are essential for tuning the electronic properties of the cuprate superconductors Bi_2Sr_2Ca_(n-1)Cu_nO_(2n+4+δ).Here,we study an optimally doped Bi_2Sr_(2-x)La_xCuO_(6+δ)and an overdoped Bi_(2-y)Pb_ySr_2CuO_(6+δ)by scanning tunneling microscopy and spectroscopy(STM/STS).Based on the characteristic features of local STS,three forms of oxygen dopants are identified:interstitial oxygen atoms on the SrO layers,oxygen vacancies on the SrO layers,and interstitial oxygen atoms on the BiO layers.In both samples,the first form dominates the number of oxygen dopants.From the extracted spatial distribution of the oxygen dopants,we calculate the dopant concentrations and estimate the average hole carrier density.The magnitudes of the electronic pseudogap state in both samples are inhomogeneously distributed in space.The statistical analysis on the spatial distributions of the oxygen dopants and the pseudogap magnitude demonstrates that the doped oxygen atoms on the SrO layers tend to suppress the nearby pseudogap magnitude.     

Mechanical and Dynamic Stability of Complete and Nonstoichiometric 3<Emphasis Type="Italic">C</Emphasis>-Si<Subscript><Emphasis Type="Italic">x</Emphasis></Subscript>C<Subscript><Emphasis Type="Italic">y</Emphasis></Subscript> from Ab Initio Calculations

The energies of formation of vacancies in the carbon and silicon sublattices, the independent elastic constants, the all-round compression, shear and Young’s moduli, and the anisotropy coefficients are determined for the complete and nonstoichiometric cubic phases of 3C-Si_xC_y (x, y = 1.0–0.75) by ab initio methods of the band theory. In the formalism of the density functional perturbation theory (DFPT), the phonon dispersion dependences are obtained for these phases (the comparison with the experiment is given for the complete phase). It is shown that the mechanical characteristics of the phases become strongly anisotropic upon the transition from 3C-SiC_0.875 to 3C-SiC_0.75. It is established from the analysis of the phonon dispersion curves that the 3C-SiC_0.875 and 3C-SiC_0.75 phases, in contrast to the complete 3C-SiC phase, are dynamically unstable at T = 0 K.     

Thermodynamic study of compounds of the Nd-Ba-Cu-O system

Standard enthalpies of formation for solid solutions of composition Nd_{1 + x} Ba_{2 ? x} Cu₃O _y (x = 0–0.8, y = 6.65–7.24) from oxides were determined by solution calorimetry. The heat capacity of NdBa₂Cu₃O_6.87 phase was measured in the range 5–320 K by low-temperature adiabatic calorimetry. The absolute entropy S ^o(T), the difference of enthalpies H ^o(T)-H ^o(0 K), and the reduced Gibbs energy Φ^o(T) = S ^o(T)–[H ^o(T)–H ^o(0)]/T were calculated on the basis of smoothed dependence C _p (T) in the 0–320 K range. An assessment was made for the heat capacities and the absolute entropies of solid solutions Nd_1+x Ba_2?x Cu₃O _y . The obtained set of thermodynamic parameters can be used for the calculation of phase equilibria in the Nd-Ba-Cu-O system.     

Structure and dielectric properties of solid solutions Bi7Ti4 + x W x Ta1–2x O21 (x = 0–0.5)

A number of solid solutions Bi₇Ti_{4 + x} W _x Ta_1–2x O₂₁ (x = 0–0.5) have been synthesized from oxides by solid-phase reaction. The crystal structure, the electrophysical characteristics, and the microstructure of the prepared ceramic samples have been studied. According to X-ray powder diffraction, all the compounds are single-phase with the structure of mixed-layer Aurivillius phases (m = 2.5) with the orthorhombic crystal lattice (space group I2cm, Z = 2). Temperature dependences of the relative permittivity ε(T) of the compound have been measured, from which it has been found that the Curie temperature T _C of perovskite-like oxides Bi₇Ti_{4 + x} W _x Ta_1–2x O₂₁ (x = 0–0.5) decreases linearly as substitution parameter x decreases. The activation energies of charge carriers have been found in different temperature ranges.     

Synthesis,structure, and optical and photocatalytic properties of quasi-one-dimensional ZnO doped with Со<Subscript>3</Subscript>O<Subscript>4</Subscript> and carbon

One-dimensional nanocomposites Zn_1–x Co _x O_1–y С _у :nCo₃O₄ and solid solutions Zn_1–x Co _x O_1–y С _у , which are promising photocatalysts for the oxidation of toxic organic compounds in visible light, are obtained via the thermolysis of Zn_1–x Co _x (HCOO)(OCH₂CH₂O)_1/2 (0.1 ≤ x ≤ 0.5) precursor in a controlled gaseous atmosphere.     

The oxygen content and its ordering in the chain planes in fine-grained HTSC YBa<Subscript>2</Subscript>Cu<Subscript>3</Subscript>O<Subscript><Emphasis Type="Italic">y</Emphasis></Subscript>

A comparative analysis of the results of the X-ray and Mösbauer studies of the high-temperature superconductor (HTSC) YBa₂Cu₃O _y and YBa₂Cu_{3 ? x} ⁵⁷Fe _x O _y (x = 0.015, T _c ≈ 91.5 K) samples with different average grain sizes <D> in the micron and submicron ranges has been performed. The regularities in the change in the lattice parameter c and in the degree of occupation of different oxygen sites in the CuO_δ chain planes taking place at the decrease in <D> have been studied. The quantitative interrelation between the parameter c and the oxygen content δ in the CuO_δ planes exceeding the amount of the mobile oxygen due to the interplane oxygen redistribution is established.     

Surface quasi-ordered nanostructures NbO<Subscript><Emphasis Type="Italic">x</Emphasis></Subscript>/Nb(110): investigation by surface analysis methods

The oxygen-induced surface structure on the Nb(110) face have been investigated by X-ray photoelectron spectroscopy and X-ray photoelectron diffraction. It is shown that the states (in terms of coordination and chemical bonding) of the niobium atoms belonging to surface oxide structures on Nb(110) are similar the metallic states in NbO. The thickness of the NbO _x layer was estimated to be 0.5 nm. Two nonequivalent chemical states of oxygen atoms on Nb(110) have been selected. It is suggested that the first state is the chemisorbed state of atomic oxygen on hexagonally packed surface areas of a Nb monolayer surface and the second state is the state of oxygen atoms belonging to NbO _x -like linear streaks formed on the Nb(110) face.     

Effect of chromium and tellurium impurities on the thermoelectric parameters of galena

Concentration dependences of the Seebeck coefficient, resistivity, and thermal conductivity of thermoelectric PbS crystals with chromium (0 < x ≤ 0.01) and tellurium (0 < y ≤ 0.03) impurities are examined in the temperature region of 300–800 K. It is shown that the introduction of chromium increases the number of free electrons in PbCr _x S _1–x crystals and reduces the Seebeck coefficient. However, an increase in the concentration of tellurium in PbCr _x S _1–x–y Te _y alloys raises the Seebeck coefficient while simultaneously reducing the thermal conductivity. As a result, the thermoelectric efficiency of PbCr _x S _1–x–y Te _y crystals increases. The reasons for the observed effects are discussed.     

Cluster-Type Structure of Amorphous Smooth Hydrocarbon CD<Subscript><Emphasis Type="Italic">x</Emphasis></Subscript> Films (<Emphasis Type="Italic">x</Emphasis> ~ 0.5) from T-10 Tokamak

Structure of smooth hydrocarbon CD _x films with a high deuterium ratio x ~ 0.5 redeposited from T-10 tokamak D-plasma discharges (NRC Kurchatov Institute, Moscow) has been studied. For the first time, small and wide angle X-ray scattering technique using synchrotron radiation and neutron diffraction have been employed. A fractal structure of CD _x films is found to consist of mass-fractals with rough border, surface fractals (with rough surface), plane scatterers and linear chains forming a branched and highly cross-linked 3D carbon network. The found fractals, including sp² clusters, are of typical size ~1.60 nm. They include a C₁₃ fragment consisting of three interconnected aromatic rings forming a minimal fractal sp² aggregate 9 × C₁₃. These graphene-like sp² clusters are interconnected and form a 3D lattice which can be alternatively interpreted as a highly defective graphene layer with a large concentration of vacancies. The unsaturated chemical bonds are filled with D, H atoms, linear sp² C=C, C=O, and sp³ structural elements like C-C, C-H(D), C-D_2,3, C-O, O-H, COOH, C _x D(H) _y found earlier from the infrared spectra of CD _x films, which are binding linear elements of a carbon network. The amorphous structure of CD _x films has been confirmed by the results of earlier fractal structure modeling, as well as by researches with X-ray photoelectron spectroscopy which allow finding a definite similarity with the electron structure of their model analogues — polymeric a-C:H and a-C:D films with a disordered carbon network consisting of atoms in sp³ + sp² states.     

Formation of a cluster structure in the PbZr<Subscript>1 – <Emphasis Type="Italic">x</Emphasis> </Subscript>Ti<Subscript> <Emphasis Type="Italic">x</Emphasis> </Subscript>O<Subscript>3</Subscript> system

Microdeformations of the crystal lattices in the phombohedral and tetragonal regions of the PbZr_1–xTi_xO₃ phase diagram have been calculated and their dependences on the titanium concentration have been constructed. Based on an analysis of these dependences, it has been concluded that tetragonal-phase clusters form in the range 0.11< x < 0.12 and rhombohedral-phase clusters form in the range 0.725 < x < 0.750.     

Gas release in the process of thermal treatment of sputtered Pb(Ti<Subscript>0.48</Subscript>Zr<Subscript>0.52</Subscript>)O<Subscript> <Emphasis Type="Italic">x</Emphasis> </Subscript> films

The conditions (regimes of deposition and thermal treatment) for gas bubble formation in ferroelectric Pb(Ti_1–yZr_y)O₃ films have been determined by thermal desorption and electron and optical micros-copy. A mechanism of bubble formation has been proposed. This mechanism rests upon the notion that lead can form oxides of the PbO₂ type with a high oxygen content at relatively low temperatures and that these oxides break down with the release of oxygen to lower oxides of the PbO type upon subsequent heating. These ideas have been taken as the basis of a technique for the fabrication of Pb(Ti_1–yZr_y)O₃ films with a reduced (by an order of magnitude) density of through defects.     

The Partition Formalism and New Entropic-Information Inequalities for Real Numbers on an Example of Clebsch–Gordan Coefficients

We discuss the procedure of different partitions in the finite set of N integer numbers and construct generic formulas for a bijective map of real numbers s _y , where y = 1, 2,…, N, N = \( \underset{k=1}{\overset{n}{\varPi}}{X}_k, \) and X _k are positive integers, onto the set of numbers s(y(x ₁, x ₂,…, x _n )). We give the functions used to present the bijective map, namely, y(x ₁, x ₂, …, x _n ) and x _k (y) in an explicit form and call them the functions detecting the hidden correlations in the system. The idea to introduce and employ the notion of “hidden gates” for a single qudit is proposed. We obtain the entropic-information inequalities for an arbitrary finite set of real numbers and consider the inequalities for arbitrary Clebsch–Gordan coefficients as an example of the found relations for real numbers.     

Surface morphology and Raman spectroscopy of thin layers of antimony and bismuth chalcogenides

The phonon spectra in thin layers of bismuth telluride and solid solutions of Bi_2–xSb_xTe_3–ySe_y of different composition, belonging to three-dimensional topological insulators, have been investigated by micro-Raman spectroscopy, and the morphology of an interlayer van der Waals (0001) surface in them has been studied by semicontact atomic force microscopy at room temperature. The analysis of the Raman spectra and the intensity ratio of active and inactive longitudinal optical modes depending on the composition, morphology of the interlayer surface, and thickness of the layers enabled the estimation of the effect of topological surface states of Dirac fermions, associated with the strengthening of the electron–phonon interaction as a result of resonance Raman scattering, and the identification of the compositions, in which the contribution of topological surface states becomes dominant.     

The Nernst-Ettingshausen coefficient in the normal phase of doped HTSCs of the YBa<Subscript>2</Subscript>Cu<Subscript>3</Subscript>O<Subscript>y</Subscript> system

The temperature dependence of the Nernst-Ettingshausen coefficient Q(T) in the normal phase of doped HTSCs of the yttrium system was studied. The main features characterizing the behavior of this coefficient were revealed, and the character and mechanism of the effect that various nonisovalent substituents exert on the Q(T) dependence were analyzed. It is shown that the narrow-band model permits one not only to describe all the specific features observed in the Q(T) curves but also to perform a simultaneous quantitative analysis of the temperature dependences of four kinetic coefficients (the electrical resistivity and the Seebeck, Hall, and Nernst-Ettingshausen coefficients) with the use of a common set of model parameters characterizing the band structure and carrier system in the normal phase of an HTSC. This approach was employed to determine the carrier mobilities and the asymmetry of the dispersion curve in the systems studied (YBa₂Cu₃O_y, y = 6.37–6.91; YBa₂Cu_3?xCo_xO_y, x = 0–0.3; Y_1?xCa_xBa₂Cu₃O_y, x = 0–0.25; Y_1?xCa_xBa_2?xLa_xCu₃O_y, x = 0–0.5) and to analyze the effect of the substitutions involved on the variation of these parameters.