硒化锌基底3~12μm渐变折射率红外增透膜的设计

叙述了傅里叶合成方法的原理和该方法用于ZnSe基底3～12μm红外增透膜的设计.通过反傅里叶变换期望的光谱特性曲线得到渐变折射率膜层.用薄膜特征矩阵的方法计算细分成很薄的多层均匀膜层的光谱透过率曲线,构造了新的Q函数和用逐次近似的方法修正膜层的折射率轮廓图,能有效地减小与期望透射率曲线的偏差.再给膜层加上五次方多项式匹配层与空气和基底两侧界面相匹配.所得渐变折射率增透膜在设计波段平均透射率达到95%.     

线性共蒸法制备渐变折射率薄膜的光学特性分析

利用德鲁德理论和洛伦兹一洛伦茨理论，从介电常数分析人手，探讨了混合介质膜的折射率表达式，给出利用双源共蒸法镀制的渐变折射率薄膜在混合介质膜的总沉积速率恒定、两种膜料的单分子大小近似相等和沉积速率均为线性变化时的折射率表达式；从正变和负变、单周期和多周期、不同的周期数和不同的单周期厚度几个方面对渐变折射率薄膜的光学特性进行了模拟分析和讨论；对渐变折射率薄膜的实现、应用以及实验制备中有待进一步解决和处理的问题进行了讨论。     

一种降低渐变折射率反射膜表面电场的方法

为了解决渐变折射率反射膜表面电场不为0,容易造成表面损伤的问题,提出了反射相移补偿方法,即不引入另外界面,在渐变折射率反射膜表面增加一层适当厚度的均匀膜,来降低渐变折射率反射膜的表面电场。结果表明,该方法确实降低了渐变折射率反射膜的表面电场;缺点是导致了渐变折射率反射膜中心波长的略微漂移,但该漂移相比于反射带宽而言可以忽略。该研究对制备高损伤阈值的渐变折射率反射膜具有参考价值。     

反应磁控溅射制备SiOx渐变折射率红外梳状滤光片

梳状滤光片是一种特殊的非均匀光学薄膜器件,其膜层折射率渐变分布结构使它与常规均匀光学薄膜相比具有更好的光学和机械性能.利用反应磁控溅射工艺,改变沉积SiOx(0≤x≤2)膜氧化程度,获得折射率从2.74逐渐变化到1.58(λ=1550 nm)的SiOx渐变折射率薄膜材料.通过调制膜层折射率振幅和引入膜层-外部介质折射率匹配层,成功地设计并制备了具有较好光学性能的SiOx渐变折射率红外梳状滤光片光学薄膜器件.使用单一的硅溅射靶材,通过改变氧化程度获得可变折射率材料的方法,为特殊光学薄膜器件的制备提供了一种经济实用的工艺路线.     

渐变折射率塑料光纤的研究动态

介绍了渐变折射率塑料光纤 (GI- POF)的传输性能、制造方法和应用 ,简述了国内GI- POF的研究动态和展望。     

金属包层渐变折射率平板波导传播特性

本文采用多层线型分割近似，结合欧姆损耗微扰法，分析了金属包层渐变折射率平板波导的传播特性。按此方法计算了几类典型波导的传播常数数值，结果均与精确值相吻合，且物理概念清楚，计算方法简单。     

渐变折射率双包层光纤吸收效率的波动理论分析

用已知的积分公式计算了光纤中的总模数;用WKN方法推导了2个积分,分别用以计算两部分不能被双包层光纤(DCF)纤芯吸收的模式数量;最后将不被吸收的模式数与光纤总传播模式数作比较,得出渐变折射率DCF的吸收效率。给出了计算实例．讨论了吸收效率与渐变折射率参数及纤芯偏心距离之间的关系。     

椭偏法测试聚合物薄膜折射率的研究

针对聚合物PMMA改性光波导研制的需求,自建了一台变入射角、开放光路、适用范围更广的椭偏测试仪.通过实际测量聚合物PMMA改性薄膜,并与国内椭偏仪实测数据进行对比分析,表明本系统的实验数据更为可信.在此基础上还用本系统实测了几种常用光刻胶薄膜,通过估算和分析它们的折射率在日照前后的变化,进一步验证本系统的可行性和适应性.论文最后对此类系统设置要点进行了归纳,为系统今后的改进提供参考.     

渐变折射率平板波导的传输特性及实验研究

分析了渐变折射率平板波导(GISLAB)的工作特性.理论推导表明GISLAB在折射率渐变方向具有与自聚焦透镜完全一样的传输矩阵与成像性质,分析讨论了GISLAB输出光束的传输特性.并通过实验验证了GISLAB的工作特性.     

光微流控可调谐渐变折射率透镜特性研究

基于对流扩散效应,利用有限元分析法建立了一种光学渐变折射率微腔流体透镜。分析了微腔中芯、包层液体在对流扩散过程达到稳定后的浓度分布情况,即所谓的混合流体折射率分布。研究了对流扩散模型结构,分别在一般情况下（芯层流体折射率大于包层流体折射率）和中心凹陷情况下（芯层流体折射率小于包层流体折射率）,沿流体流动方向的不同截面对流扩散后折射率分布情况。     

光学膜厚监控方法

光学膜厚监控方法是光学镀膜过程中用以控制光学薄膜光学厚度的主要方法,也是实现镀膜自动化的关键技术之一.了解光学膜厚监控方法的工作原理、特点及误差来源,有助于在实际应用中根据所镀产品的要求选择合适的光学监控方法及监控参数.文中针对最常用的两种光学膜厚监控方法一单波长法和宽光谱法,分别介绍其工作原理,给出了单波长下根据薄膜的透射率或反射率推算膜层厚度的计算方法以及宽光谱法所常用的3种评价函数,总结出影响单波长法测量的8种因素和宽光谱法的11种因素,并根据这些因素分析了这两种方法的特点和适用范围.     

A study of the design of ZnO thin film pressure sensors

This study takes the first step in designing ZnO thin film pressure sensors with high operating temperatures. To fabricate the pressure sensors, ZnO thin films are deposited on SiO₂/(100)Si substrates to obtain structures similar to those of silicon-on-insulator. The optimal deposition parameters used to deposit the thin films are a full width at half maximum (FWHM) of 0.269, a c-axis-oriented structure near 100% and an average grain size of 321 Å. Here, to simplify the ZnO thin film pressure sensor system, a new parameter, the ZnO resistance, which changes with the change of pressure, is analysed. ZnO thin film fabricated under the optimal conditions can work as a pressure sensor and its response value, which is proportional to pressure, is greater than 8mΩ/psi. The relative pressure can be obtained from the difference between the response value before applying pressure and after. Further, a special characteristic of these ZnO pressure sensors is that the pressure can be read even during gas inlet.     

Analysis and design of thin film resonator ladder filters

This work presents a new simulation method for the analysis and design of bandpass filters based on thin film resonators (TFRs). The method is based on linear two-port network theory and can be applied for of ladder filters in general. Analytical equations for the case of TFR ladder filters are extracted by the proper modeling of the TFR.     

薄膜型光纤温度传感器的膜系设计

纳米薄膜与光纤的结合为新型感测提供了各种潜在可能.为了分析温度敏感薄膜的膜系设计及其对光纤温度传感器传感特性的影响,根据光学薄膜理论和光纤传感器的温度感测原理,探讨了光纤温度传感器中敏感薄膜的膜系设计,并构建了薄膜型光纤传感器的温度传感特性模型.以测试系统的参数、性能以及其对干涉光谱的要求为基础,设计了对称性较好的法布...     

光学薄膜参数测量方法研究

为了研准确性和效率更高的膜层光学薄膜参数测量方法,对优化膜系结构和改进制备工艺都有重要的指导作用.论文在研究传统测量方法基础上,将包络线法与全光谱拟合反演法相结合,提出了一种新型的光学薄膜参数测量方法.该方法将采用包络线法计算的单层膜光学薄膜参数近似值作为参考,设置全光谱拟合反演法优化搜索的上下限,结合适当的评价函数构建计算物理模型,并选用综合优化算法求解获得待测膜系各膜层的光学薄膜参数.最后设计TiO2、SiO2单层膜和膜系为:G|0.5HLHL0.5H|A(H-TiO2,L-SiO2)的多层膜进行测量验证,并分析了该测量方法的效率准确度、稳定性等.     

薄膜偏振分光镜的优化设计与实验

采用矩阵法推导了规整膜系的等效导纳并计算出中心波长的反射率,重点分析了P偏振光的有效导纳与折射率之间的关系,说明了膜系对高、低折射率的灵敏度是不同的;给出了设计薄膜偏振分光镜需满足的公式组,突破了Mac Neille公式的限制;介绍了调节有效导纳值的膜层置换法,可有效抑制P光的反射峰。模拟与实验结果表明,在170 nm范围内,消光比大于1 000:1。     

Geometrical design of thin film photovoltaic modules for improved shade tolerance and performance

Partial shading in photovoltaic modules is an important reliability and performance concern for all photovoltaic technologies. In this paper, we show how cell geometry can be used as a design variable for improved shade tolerance and performance in monolithic thin film photovoltaic modules (TFPV). We use circuit simulations to illustrate the geometrical aspects of partial shading in typical monolithic TFPV modules with rectangular cells, and formulate rules for shade tolerant design. We show that the problem of partial shading can be overcome by modifying the cell shape and orientation, while preserving the module shape and output characteristics. We discuss two geometrical designs with cells arranged in radial and spiral patterns, which (i) prevent the reverse breakdown of partially shaded cells, (ii) improve the overall power output under partial shading, and (iii) in case of spiral design, may additionally improve the module efficiency by reducing sheet resistance losses. We compare these designs quantitatively using realistic parameters and discuss the practical aspects for their implementation. Copyright © 2013 John Wiley & Sons, Ltd.     

sol-gel法制备ZnO薄膜压敏电阻

利用sol-gel法在镀有Au底电极的单晶硅片上,制备掺有Bi2O3、Co2O3、Cr2O3和MnO2的ZnO薄膜压敏电阻。薄膜由旋涂法制备,并在300℃下预处理、600℃退火。制得的ZnO薄膜结晶良好。膜厚约为1μm,ZnO薄膜压敏电阻的非线性系数为15.1,压敏电压为3.037 V,漏电流为43.25μA。     

A useful method for approximating the profile of ions implanted through a thin film

An approximate calculation method is presented for finding profiles of ions implanted through a thin film, based on standard range tables. Both the projected range and straggling in the substrate are calculated.     

A simple droplet pinning method for polymer film deposition for measuring charge transport in a thin film transistor

Thin-film field-effect transistors (FETs) are widely used to evaluate charge transport properties of semiconducting polymers. Discovery of high performance materials require design and synthesis of new polymers. However, most polymers require multi-step synthesis and are difficult to be obtained in a large scale for comprehensive device evaluations. Here, we report a simple method to cast semiconducting polymer films from solutions with polymer concentration as low as 0.5 mg/mL, which is substantially less than typical values (∼10 mg/mL) used in conventional spin coating method. Here, we demonstrate that using this method, our cast films of a previously-reported polymer (PDPP-TT2T) exhibited field-effect mobility (μ_hole = 0.89 ± 0.13 cm² V⁻¹ s⁻¹, μ_e = 0.025 ± 0.005 cm² V⁻¹ s⁻¹), which is comparable to the reported values using the same device geometry. Furthermore, we extend this method to examine cast films of a pair of polymers (PDPP-3T-Ref, PDPP-3T-Si) to study the effect of siloxane substitution in the side chains on the molecular packing and their subsequent FET performance. We observed that shorter π-stacking distance (3.61 Å) for the siloxane-terminated polymer, when compared to that for the reference polymer (3.73 Å), resulted in improved FET performance (e.g., μ_hole = 0.63 ± 0.046 cm² V⁻¹ s⁻¹ for PDPP-3T-Si vs μ_hole = 0.17 ± 0.062 cm² V⁻¹ s⁻¹ for PDPP-3T-Ref). Taken together, this work presents an efficient alternative film-casting approach to produce polymer FETs that consumes much less material for their fabrication, lending viability for evaluation of various polymeric materials.