A study on the self-interstitial structure of radiation damaged silicon by means of the double alignment channeling technique

The angular distribution of 2.8 MeV helium ions backscattered from silicon crystals containing self-interstitials has been calculated by channeling computer simulations for a double alignment channeling configuration. The structures of the self-interstitial defects are assumed to be the split <110> interstitial and the split <100> di-interstitial with various inter-atomic distances. The obtained profiles of the backscattering yield are found to show shapes characteristic for each structure which can be used for differentiating between these structures. When comparing these profiles with experimental profiles obtained with the same double alignment channeling configuration in a previous study one finds reasonable agreement for the split <110> interstitial defect with an inter-atomic distance of 1.76 Å.     

Comparative investigations of TL and OSL in KCI:Eu2+ crystals irradiated with UV and X-rays

Abstract

We present thermoluminescence (TL) glow curves and optical stimulated luminescence (OSL) response from both KCl:Eu²⁺ crystals irradiated with soft X-rays (20 KV, 80 μA) and ultraviolet light (230 nm). Two situations take place. First, we observed that for long time F-light bleaching (560 nm) the typical TL glow curve of X-rays irradiated KCl:Eu²⁺ resembles the TL glow curve of UV-irradiated samples. Second, along with OSL measurements, we have performed a thermal bleaching and we have addressed F and F_z participation in OSL. These results provide us a supportable correlation between F and F_z as responsible centers for OSL and TL processes.     

Angular dependences of sputtering ratio,ion-electron emission coefficient and ion-induced photon emission yield at oblique ion incidence on crystalline targets

The angular dependences of the sputtering ratio, ion-induced photon emission yield and the ion-electron emission coefficient for two faces of a copper'crystal at glancing angles of ion incidence on the targets has been experimentally studied.     

Systematic study of the relationships between energy levels of Tl(1), Tl centers and the crystalline environment

In this paper, we present the first systematic study of the relationships between energy levels of Tl⁰(1) and Tl²⁺ centers in alkali halides and the crystalline environment by using dielectric theory of chemical bond for complex crystals. It is found that the coordination number of the central ion, the bond volume polarizability, and the fractional covalence of the chemical bond between the central ion and the nearest anion are the three determinative parameters for the absorption band energy. Four empirical formulas are proposed. The calculated results are in good agreement with the experimental values. The current model can serve as a prediction tool and can be applied to assign the absorption band energy of Tl⁰(1) and Tl²⁺ centers.     

Thermally stimulated current and high temperature resistivity measurements of 4H semi-insulating silicon carbide

High purity semi-insulating 4H SiC single crystals have potential applications for room temperature radiation detectors because of the wide band gap and radiation hardness. To control carrier lifetime, a key parameter for high performance radiation detectors, it is important to understand the nature of the deep traps in this material. For this purpose, we have successfully applied thermally stimulated current (TSC) and high temperature resistivity measurements to investigate deep level centers in semi-insulating 4H SiC samples grown by physical vapor transport. High temperature resistivity measurements showed that the resistivity at elevated temperatures is controlled by the deep level with an activation energy of 1.56 eV. The dominant traps revealed by TSC measurements were at 1.1-1.2 eV. The deep trap levels in 4H-SiC samples, the impurity and point defect nature of TSC traps peaked at ∼106 K (0.23 eV), ∼126 K (0.32 eV), ∼370 K (0.95 eV), ∼456 K (1.1-1.2 eV) are discussed.     

X-ray luminescence of disperse SiO2 and porous silicon

We carry out a comparison between the luminescence spectra (photo-and x-ray luminescence) of porous silicon and disperse SiO₂, which by its physical characteristics is most similar to oxide films on porous silicon. The photoluminescence of porous silicon was also investigated using fluorescence (excitation by a nitrogen laser) and metallographic microscopes. We found that the natures of the luminescence centers of porous silicon and disperse SiO₂ are identical. A porous layer on single-crystal silicon ensures the creation of a highly branched surface of oxide film. Luminescence centers are located on its inner (as viewed from the porous silicon) surface. Translated from Zhurnal Prikladnoi Spektroskopii, Vol. 65, No. 2, pp. 247–251, March–April, 1998.     

Luminescence of aggregate centers in CsBr:Eu2+ single crystals

We have used the Bridgman method to grow CsBr:Eu²⁺ single crystals, adding an activator to the mix in the form of Eu₂O₃ in amounts of 0.0125, 0.0250, and 0.0500 mole %. At T = 300 K, we studied the absorption spectra, the photoluminescence (PL) spectra, and the photostimulated luminescence (PSL) spectra of the grown crystals. We have established that the structure of the photoluminescence and photostimulated luminescence centers in crystals grown from the CsBr:Eu₂O₃ mix includes isolated dipole centers Eu²⁺-V_Cs, emitting in bands with maxima at 432 nm and 455 nm respectively, and in crystals grown at activator concentrations of 0.025 and 0.050 mole % they also include aggregate centers (AC) based on CsEuBr₃ nanocrystals with emission bands at 515 m and 523 nm. We have shown that the maximum concentration of aggregate centers of the CsEuBr₃ nanocrystal type in CsBr:Eu²⁺ crystals is achieved for an activator content in the mix within the range 0.01–0.05 mole %. __________ Translated from Zhurnal Prikladnoi Spektroskopii, Vol. 73, No. 3, pp. 359–362, May–June, 2006.     

涂敷红、绿荧光粉的白光LED显色性研究

通过蓝光发光二极管(LED)芯片激发红、绿两种荧光粉制作白光LED,首先保持两种荧光粉的配比不变,依次从2700～13000 K改变相关色温,发现在某一色温段时,显色指数达到最高.然后依次改变两种荧光粉的配比,重复试验,发现不同的荧光粉配比,达到最高显色指数所对应的色温段不同.试验结果表明,通过合理匹配红、绿荧光粉和硅胶三者之间的比例.可以实现在2700～13000 K之间的任一色温区,显色指数均能达到90以上,在4000 K以下的低色温区,显色指数可达到96.基于此.通过选择和匹配LED蓝光芯片、荧光粉的激发、发射波长,以及它们之间的比例关系,可以实现在任意色温段使显色指数最大化的白光LED光谱设计.     

Behavior of antimony above solid solubility in silicon produced by implantation and laser annealing

Abstract

Antimony implantation into <111> silicon was carried out at RT with a dose of 4.5 × 10¹⁵ cm^?2, energy 75 keV. For the annealing of the sample pulses of a Q-switched ruby laser were used with energy density of ～ 1.5 Joule/cm² and duration of 15–20 nsec. Hall effect measurement was applied to determine the electrical activity of the layers. Lattice location and the depth profile of Sb was studied by RBS and channeling technique. Measurements show that after laser annealing Sb occupies mostly substitutional sites in Si with 84% electrical activity. It has been shown that after laser annealing the concentration of Sb in lattice sites is almost an order of magnitude higher than the limit of solid solubility. Isochron and isothermal annealing of these samples up to 1150°C was carried out to study the kinetics of reverse annealing of antimony.     

First-principles study of the H and F centers in LiYF4

We have investigated the electronic structures of the LiYF₄ containing interstitial fluorine atoms and F center (a fluorine ion vacancy trapping an electron) using first-principles density functional theory. It is found that the interstitial fluorine atoms in two different interstitial positions would combine with its nearest neighbor two or three formal lattice fluorine ions forming fluorine molecular ions or by different ways, which would cause the 260 nm absorption band. Simultaneously, our study indicates that one electronic state appears in the forbidden band of the perfect LiYF₄ crystal resulting from the F center in the LiYF₄ crystal. And the energy difference of this electronic state and the bottom of the conduction band is 3.74 eV, corresponding to the 331 nm absorption band. It is predicted that the 330 nm absorption band could arise from the F center in LiYF₄ crystals.     

Eu^2＋：Sr9Ca（PO4）6Cl2中的新型色心及其光激励发光

本文报道了Ｅｕ＾２＋：Ｓｒ９Ｃａ（ＰＯ４）６Ｃｌ２的新型色心。它的吸收带主峰分别位于７０８，７８５，８４５及９９０ｎｍ。用对应于Ｆ心吸收带和这些吸收带波长的光束分别激励样品时得到相同的光激励发光。通过对比研究表明，这些吸收带是由Ｆ心的缔合中心，即由ＦＡ心产生的。由于这些色心的吸收带偏离Ｅｕ＾２＋的发射波长（４５０ｎｍ）更远，故更适应于Ｅｕ＾２＋：Ｓｒ９Ｃａ（ＰＯ４）６Ｃｌ２光波励发光的研究和开发。     

The influence of interface states and bulk carrier lifetime on the minority carrier behavior in an illuminated metal/insulator/GaN structure

An influence of electronic states at an insulator/GaN interface on the behavior of excess holes in an ultraviolet-illuminated metal/ SiO₂/n-GaN structure has been studied by numerical simulations for weak (gate bias of −0.1 V ) and strong (−1 V ) depletion, in a wide range of excitation light intensities (from 10¹⁰ to 10²⁰ photons cm⁻² s⁻¹) and for various bulk carrier lifetimes (from 1 to 100 ns). It has been found that the interface states with densities of 10¹² eV ⁻¹ cm⁻² dramatically reduce the total (integrated in the whole GaN layer) density of photogenerated holes and thus degrade the sensitivity of the metal/insulator/GaN-based photodetector.     

Modulated optical reflectance measurements on amorphous silicon layers and detection of residual defects

Modulated optical reflectance measurements on amorphous silicon layers are presented and a simple theoretical model, which is in good agreement with the experiment, is proposed. Further, the correlation between defects remaining after recrystallization of the amorphous layers and the measured modulated optical reflectance is established. This measurement technique turns out to be useful for characterizing amorphous Si layers produced by ion implantation, for controlling the recrystallization of such layers, and for detecting residual defects.     

Determination of photoexcited carrier concentration and mobility in GaAs doping superlattices by hall effect measurements

The photo-Hall effect in a new type of periodicp-n doping multilayer structures (superlattices) of GaAs grown by molecular beam epitaxy has been investigated. In these space charge systems electrons and holes are separated in real space. As a consequence, large deviations from thermal equilibrium become quasi-stable. Carrier generation by optical absorption occurs in these doping superlattices even at photon energies far below the gap of the homogeneous semiconductor material. The photoexcitation results in a strong enhancement of the conductivityparallel to the layers and in a substantial photovoltaic response. An increase in carrierconcentration as well as an increase in carriermobility both contribute to the observed enhancement of the conductivity under excitation. The absolute values of changes in free-carrier concentration are very large due to the manyfold active layers of the structure. The measured free-carrier mobilities depend on the population of the multilayer system. A reduction in mobility as compared to bulk material is found to be more pronounced in weakly populated systems. This finding is caused by the larger weight of the boundary regions of the total active layers where the free-carrier density is lower than the density of ionized impurities resulting in an enhanced impurity scattering.     

Determination of carrier density dependent lifetime and quantum efficiency in semiconductors with a photoluminescence method (application to InGaAsP/InP heterostructures)

The light beam of a laser is focussed near the surface of a semiconductor sample. Thereby the excitation rate can be controlled precisely assuming a Gaussian intensity distribution of the beam. Measuring the recombination light intensity yields the quantum efficiency of the sample. By sinusoidal modulation of the excitation light and measurement of the resulting phase shift of the recombination light, the carrier density dependent lifetime is obtained. By evaluation of measured internal quantum efficiency and phase shift, Auger and radiative recombination coefficients are determined. The analysis takes into account the carrier density dependence of the radiative coefficient and shows that for most experimental conditions carrier diffusion can be neglected. In this case the analysis can be performed without numerical integration. Application of the method to quaternary InGaAsP material yielded values for Auger coefficient and radiative coefficients in accordance with published results.     

Flux and fluence dependence of disorder produced during implantation of 11B in silicon

The flux and fluence dependence of disorder produced in silicon during the implantation of ¹¹B has been investigated at room temperature, -50°C. and -120°C. Implantations were carried out with 200 keV ¹¹B ions using current densities in the range from 0.06μA/cm² to 15μA/cm², and the disorder monitored by measuring the energy spectra of backscattered protons which were incident on the sample at 450 keV parallel to a (110) axis. Significant differences in the dependence of the disorder on ¹¹B flux and fluence were observed between the implantations performed at room temperature and those carried out at the two lower temperatures.     

Infrared picosecond absorption spectroscopy of microcrystalline silicon: separation between carrier recombination in crystalline and amorphous fractions

We have studied ultra-fast carrier dynamics of photo-excited carriers in hydrogenated microcrystalline silicon prepared by a very high frequency glow-discharge technique. We report on direct observation of two types of dynamics using selective photo-excitation in picosecond pump and probe measurements. One type of the observed dynamics has been found to be independent of the sample preparation, while the other reflects the relative weights of crystalline and amorphous fractions. We propose a simple rate-equation model that describes the carrier dynamics in microcrystalline silicon in terms of the composition of those in Si microcrystallites and in the a-Si:H tissue which surrounds the microcrystallites. The model without any fitting parameters reproduces the experimental data very well when the dynamics are scaled with relative volume fractions as obtained from Raman spectra. Received: 23 November 2000 / Accepted: 17 March 2001 / Published online: 23 May 2001     

Characterization of thermal, optical and carrier transport properties of porous silicon using the photoacoustic technique

In this work, the porous silicon layer was prepared by the electrochemical anodization etching process on n-type and p-type silicon wafers. The formation of the porous layer has been identified by photoluminescence and SEM measurements. The optical absorption, energy gap, carrier transport and thermal properties of n-type and p-type porous silicon layers were investigated by analyzing the experimental data from photoacoustic measurements. The values of thermal diffusivity, energy gap and carrier transport properties have been found to be porosity-dependent. The energy band gap of n-type and p-type porous silicon layers was higher than the energy band gap obtained for silicon substrate (1.11 eV). In the range of porosity (50-76%) of the studies, our results found that the optical band-gap energy of p-type porous silicon (1.80-2.00 eV) was higher than that of the n-type porous silicon layer (1.70-1.86 eV). The thermal diffusivity value of the n-type porous layer was found to be higher than that of the p-type and both were observed to increase linearly with increasing layer porosity.     

F／Cl比与Eu~（2＋）：BaFCl中F色心的浓度和光激励截面的关系

研究了Ｅｕ（２＋）：ＢａＦｘＣｌ２在紫外线辐照下的光激励发光。通过改变激励方式及激励光的扫描方向，给出了Ｅｕ（２＋）：ＢａＦｘＣｌ２－ｘ光激励发光过程中，两种Ｆ色心的浓度比值与光激励截面比值的测定方法。利用这种测定方法，进一步研究了两种Ｆ色心的浓度比值和光激励截面比值与Ｆ／ＣＩ比值的关系。