质子辐照硼硅酸盐玻璃盖片的物理效应分析

作为航天器电源系统的重要组成部分,太阳电池需要更高的转换效率和可靠性以及更长的使用寿命。通过在太阳电池表面覆盖抗辐照玻璃盖片,可以增强太阳电池对粒子辐射的防护,延长太阳电池的服役寿命,使航天器获得可靠的能源供应。硼硅酸盐玻璃就是一种理想的太阳电池玻璃盖片材料。采用蒙特卡罗方法,结合SRIM软件模拟研究质子辐照硼硅酸盐玻璃的损伤物理机理。基于粒子与物质相互作用的理论以及基本公式,通过分析不同入射能量的质子在硼硅酸盐玻璃中的阻止本领、电离能损、位移能损、空位的产生情况,对辐照损伤的物理机制进行研究。结果表明:能量为30~120 keV的质子辐照损伤主要发生在硼硅酸盐玻璃表面;质子沉积、空位分布等均为Bragg峰型分布;电离能损是能量损失的主要部分,随入射能量的增加而增大,导致电子的电离和激发;位移能损在玻璃内部随能量降低而增大,导致硼、氧和硅等空位缺陷的产生;电离效应和缺陷的产生是硼硅酸盐玻璃色心形成的重要原因。     

Diagnostics of High-Temperature,High-Density Plasma by Radiation Analysis

This article will be restricted to the diagnostics of laboratory plasmas having an average particle energy of higher than 30 eV per particle and a density of greater than 10¹⁹ particles per cm³. Common features of such plasmas related to applied spectroscopy are their complete ionization, the high excitation and ionization levels the particles, the large emission coefficients for continuum radiation over a wide spectral range from the X-ray region up to the infrared, their small size, high temperature and density gradients to the environment, and their transient nature.     

Theory of defects and defect processes

Most studies of imperfect solids concentrate on the properties of individual isolated defects. These include electronic structure, formation energies and diffusion parameters of point defects and point defect aggregates. Many physical phenomena are determined by defect processes, in which defects interact or the defect state of the lattice evolves. Such phenomena include the radiation damage process and subsequent development of microstructure, the matter and charge transport in the growth of oxide films, the recombination—or ionization—assisted diffusion in many systems, and a range of degradation mechanisms. These and other examples are discussed. The emphasis is on those cases where quantitative theory can unravel phenomena which experiment alone cannot easily do, notably those situations where the time scales are inconvenient or the system too complex for easy experimental analysis.     

Investigation of the radiation damage to a single crystal of KCl using the method of backward scattering and chaneling of hydrogen and helium ions

The method of channeling and backward scattering of H⁺ and He⁺ ions has been used to analyze the radiation defects in a single crystal of KCl when the crystal is irradiated with H⁺ and He⁺ ions with energies of 1 MeV. The position of the displaced atoms in the crystal lattice was determined and the value of the cross section for the formation of radiation defects and their rate of formation as a function of the radiation dose and orientation of the bombarded beam with respect to the 100 crystallographic axes of the crystal are found. The effect of an external electric field on the formation of the radiation defects was investigated. The effects of irradiation with H⁺ and He⁺ ions are compared with one another. It is shown that mechanisms connected with ionization and excitation of the crystal atoms make the main contribution to the formation of defects.Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 3, pp. 49–53, March, 1980.     

Is there a giant (3,3) resonance in nuclei?

The influence of the structure of a nucleus on the nuclear (3,3) resonance is discussed in the framework of a special kind of a particle hole model where the elementary excitation mode is assumed to be the transition of a bound nucleon into a (bound) Δ. The residual interaction between a nucleon and a Δ leads to a mixing of different particle-hole excitations and hence, collective effects are expected to show up, resulting for example in a shift of the main peak of the excitation spectrum; furthermore — due to quenching — a fine structure in the spectrum could be visible, — Recent experimental data on the ⁴He(γ,pπ^?) reaction can possibly be interpreted in the present model with an attractive NΔ residual interaction.     

Highly selective multistep ionization of atoms by laser radiation

The possibility of dramatic selectivity increase during the stepwise ionization of atoms due to selective excitation at every step has been examined. Evaluations have been made to estimate the selectivity of excitation and ionization by laser radiation of some atoms, their isotopic shifts of absorption lines being observed at several excitation steps, for instance those of U, Yb, Gd. During three-step ionization of Yb atoms in atomic beam one may obtain an excitation selectivity equal to 4.4 × 10¹⁶ cm².     

Conductivity of ionic crystals when they are irradiated by picosecond electron beams

This paper discusses the pulsed electron conductivity σ of KCl, KBr, and NaCl crystals when they are excited by an electron beam (0.2 MeV, 50 ps) with current densities in the interval j=(30–10⁴) A/cm². It is shown that the lifetime of the electrons in the conduction band is τ≪100 ps. To explain the experimental σ(j) dependences, a model is proposed that includes electron capture by structural defects and stable radiation defects at low excitation densities and electron capture predominantly by unstable radiation defects generated by the excitation pulse at high excitation densities. Fiz. Tverd. Tela (St. Petersburg) 41, 1200–1203 (July 1999)     

Ionization and stabilization of atoms in a high-intensity,low-frequency laser field

The dynamics of a model silver atom in the strong radiation field of a Ti:sapphire laser is studied in the Keldysh parameter regions γ ⩾ 1 and γ ⩽ 1. It is found that in the entire range of Keldysh parameter variations, along with ionization, the efficient excitation of Rydberg states of the atom with principal quantum numbers n = 6−14 is observed. A Rydberg wavepacket appearing in this case proved stable with respect to ionization; i.e., the atomic system in strong low-frequency electromagnetic fields becomes stable with respect to ionization. The physical reasons behind the stabilization are discussed.     

Elementary processes during collisions of ions with tryptophan molecules

The relative cross sections of elementary processes occurring in single collisions of tryptophan molecules in the gaseous phase with He²⁺ ions with energy 4 keV/u are measured using time-of-flight mass spectrometry for studying the mechanism of radiation damage of amino acid molecules. The fragmentation channels for intermediate singly and doubly charged tryptophan molecular ions formed during one-electron capture, two-electron capture, and electron capture with ionization are investigated. Significant difference is observed in the mass spectra of fragmentation of intermediate doubly charged ions formed during the capture with ionization and double capture, which is associated with different energies of excitation of {C₁₁H₁₂N₂O₂}²⁺* ions.     

Ordering of crystal structure by ionizing radiation

We have studied the action of ionizing radiation on defect-containing semiconductor crystals, metals, and alloys. Using modern methods for investigation of solids, Rutherford back scattering of channeled charged particles, x-ray diffraction, electron microscopy, and also calorimetric methods, we have established: a) irradiation (by x-ray beams, gamma rays, and electrons) of metals and alloys with an equivalent radiation dose less than 10⁵ J/kg and of semiconductor crystals with a dose less than 10³ J/kg does not lead to additional accumulation of defects but conversely leads to elimination of defects and transition of the crystal to a more equilibrium state; b) ionization processes play a determining role in rearrangment of defects in crystals exhibiting both semiconductor and metallic conductivity. We show that rearrangment of the crystal occurs as a result of stored energy in the crystal which is liberated due to chain reactions of annihilation of defects, initiated by ionization. Transition of the crystal to the equilibrium state is accompanied by improvement of its physical properties.Deceased.Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 12, pp. 58–67, December, 1994.     

Investigating fast neutron interaction with chromium nuclei

A new technique based on a Frisch grided ionization chamber and digital signal processing unit is used for low-background measurements of a cross section of the (n, α) reaction proceeding on a solid target mounted on a cathode. Measurements of the (n, α) reaction cross section for the ⁵⁰Cr and ⁵²Cr isotopes are carry out. It is shown that the data for ⁵⁰Cr differ from the ENDFB-VII evaluation by a factor of 20. The excitation function reveals a structure missing from our assessment. The ⁵²Cr(n, α) reaction cross section is measured for neutrons with energies of less than 14 MeV for the first time.     

Radiation effects of 50-MeV protons on PNP bipolar junction transistors

The effects of radiation on 3CG110 PNP bipolar junction transistors (BJTs) are characterized using 50-MeV protons, 40-MeV Si ions, and 1-MeV electrons. In this paper, electrical characteristics and deep level transient spectroscopy (DLTS) are utilized to analyze radiation defects induced by ionization and displacement damage. The experimental results show a degradation of the current gain and an increase in the types of radiation defect with increasing fluences of 50-MeV protons. Moreover, by comparing the types of damage caused by different radiation sources, the characteristics of the radiation defects induced by irradiation show that 50-MeV proton irradiation can produce both ionization and displacement defects in the 3CG110 PNP BJTs, in contrast to 40-MeV Si ions, which mainly generate displacement defects, and 1-MeV electrons, which mainly produce ionization defects. This work provides direct evidence of a synergistic effect between the ionization and displacement defects caused in PNP BJTs by 50-MeV protons.     

Damage and molecular changes under a laser beam in SEM‐EDX/MRS interface: a case study on iron‐rich particles

The control of damage to individual environmental particles by a laser beam during Raman spectroscopy carried out in ambient air is generally well understood. The nature and control of damage under vacuum conditions (e.g. in the scanning electron microscopy with energy X‐ray detection combined with micro‐Raman spectroscopy—interfaced SEM‐EDX/MRS) are more complex and less well comprehended. The physical and chemical processes that affect the damage caused to small particles by lasers still remain somewhat unclear, but certainly the atmosphere (vacuum/air) and the beam intensity have very significant influences. Furthermore, it has been determined that some particles (e.g. haematite), although stable under an electron beam, are damaged by the laser beam, hampering their analysis. Additionally, when simultaneous analyses by SEM/EDX and MRS are considered, the correct choice of the collection surface plays a crucial role. As a result, the following collection substrates were tested to determine their influence on the laser beam damage process to the particle: silver and aluminium foils and silicon wafers. A test study was performed using artificial examples of haematite (Fe₂O₃) particles. Exposure of Fe₂O₃ particles in vacuum to 514‐ and 785‐nm laser radiation often leads to their melting, transformation and evaporation. The dependence of the damage caused by the laser beam on the particle structure is reported here. Molecular and crystallographic changes have also been revealed. Formation of magnetite (as an effect of re‐crystallisation) and Raman inactive structures was detected. Copyright © 2010 John Wiley & Sons, Ltd.     

Deep impurity-center ionization by far-infrared radiation

An analysis is made of the ionization of deep impurity centers by high-intensity far-infrared and submillimeter-wavelength radiation, with photon energies tens of times lower than the impurity ionization energy. Within a broad range of intensities and wavelengths, terahertz electric fields of the exciting radiation act as a dc field. Under these conditions, deep-center ionization can be described as multiphonon-assisted tunneling, in which carrier emission is accompanied by defect tunneling in configuration space and electron tunneling in the electric field. The field dependence of the ionization probability permits one to determine the defect tunneling times and the character of the defect adiabatic potentials. The ionization probability deviates from the field dependence e(E) ∝ exp(E ²/E _c ² ) (where E is the wave field, and E _c is a characteristic field) corresponding to multiphonon-assisted tunneling ionization in relatively low fields, where the defects are ionized through the Poole-Frenkel effect, and in very strong fields, where the ionization is produced by direct tunneling without thermal activation. The effects resulting from the high radiation frequency are considered and it is shown that, at low temperatures, they become dominant. Fiz. Tverd. Tela (St. Petersburg) 39, 1905–1932 (November 1997)     

RIE-induced damage and contamination in silicon

Abstract

Reactive ion etching always causes a dynamic radiation effect to crystalline silicon, beacause of an energetic particle bombardment. RIE induced radiation effects are mostly confined to the near surface within a projected range of impinging ions, but point defects, which are highly mobile at room temperatures, can migrate further into the bulk before a damaged surface layer is etched away. Competition between etch rates and damage rates ultimately determines a degree of the RIE damage residue: the slower the etch rate, the heavier the damage may be accumulated at the near surface, eventually leading to amorphization of the surface region. Also, a removal of the surface layer due to etching or sputtering enhances a chemical reaction between a bare surface and incoming radicals. This easily forms a foreign material on the surface which gives rise to a serious contamination problem. A post-cleaning at a low temperature is highly desirable whenever the surface of active devices must be exposed to reactive plasmas.     

Hole traps in Lu2O3:Eu ceramic scintillators. II. Radioluminescence and thermoluminescence

A sample of Eu³⁺-activated lutetium sesquioxide transparent ceramic has been investigated by combined scintillation and thermoluminescence excited by prolonged gamma-ray irradiation. The thermoluminescence glow curve partially confirms and extends a previous model for afterglow following pulsed X-ray excitation. The initial concentration of hole traps, tentatively attributed to anion Frenkel defects in thermodynamic equilibrium, is found to be substantially augmented by reversible radiation damage.     

60Co辐照损伤对发光二极管性能影响的研究

通过引入散射理论建立了发光二极管模型,并考虑低计量率电离辐照损伤影响,建立了器件材料散射因子与辐照损伤的关系模型.在输入电流宽范围变化的条件下,测量了器件在不同辐照条件下的电学特性,实验结果与理论模型符合良好.通过对测量结果和以上模型的分析,深入研究低剂量电离辐照损伤和发光二极管性能衰减的关系.证实由于复合中心上的电子浓度增加,导致界面态浓度和散射几率的略微增大,从而造成其I-V和L-V特性的略微衰减.同时由于重离子辐照可直接产生位移效应,使界面态浓度明显上升,因此其对发光二极管的影响较电离辐照大很多.     

Blue luminescence of nanocrystalline CaZrO3:Tm phosphors synthesized by a modified Pechini sol-gel method

This paper reports the photoluminescence (PL) properties of nanocrystalline CaZrO₃:Tm phosphor synthesized by the polymerizable complex method based on the Pechini-type reaction. Nanosized phosphors with paving stone morphology were prepared at a relatively low temperature about 800 °C with the particle size being about 30 nm. The transmission electron microscope (TEM) images showed that further heat treatment at higher temperature could increase the particle size to 50 nm, but its morphology remained unchanged. The luminescence spectra indicated that the blue emission of CaZrO₃:Tm could be produced by four kinds of excitation energies, i.e. the charge transfer (CTS) between Tm³⁺-O²⁻, band-band absorption of host, the absorption defects in the host and the ³H₆-¹D₂ transition. The luminescent mechanism of CaZrO₃:Tm was deduced tentatively based on the luminescence spectra.     

Evaluation of Limiting Characteristics of Laser Separation of Silicon Isotopes

Isotopically selective photoionization of silicon atoms by laser radiation using tunable dye lasers is considered. The scheme of atomic ionization with two-photon excitation via the resonance level of one of the high states with subsequent excitation of the autoionization state is proposed. The calculations carried out show that the up-to-date development of laser facilities allows one to evaluate the ultimate production of the highly enriched ²⁸Si isotope at a level of 0.1 g/h at a radiating power of 1 W for each wavelength. The excitation selectivity appears to be high (about 100) within the framework of the radiation problem and is actually defined by the conditions of ion extraction, background atom concentration, charge exchange, and so on rather than by the radiation processes.     

Surface polished of bulk methylammonium lead tribromide single crystal

Organic-inorganic halide perovskite materials have been demonstrated with wide applications in optoelectronics and ionization radiation detection. For bulk as-grown crystals, the existence of surface cracks and defects can significantly increase charges recombination and reduce the performance of the device. Herein, we polished the crystal surfaces with both mechanical and chemical mechanical methods at room temperature. After been chemical-mechanical polished, the crystal surface with root mean square roughness about 0.5 nm was obtained. Optical transmission and photoluminescence spectra indicate that chemical mechanical polishing technology can effectively reduce the density of crystal surface defects. The achieved low leakage current density on the surface and bulk crystal is 0.05 nA mm⁻² and 0.07 nA mm⁻², respectively. Furthermore, the current-voltage curve under visible photons and X-ray photons reveals that surface polishing treatment can suppress the charges recombination and increase the charges transportation.