高电荷态离子与Si(110)晶面碰撞的沟道效应研究

不同电荷态低速离子(Ar^q+,Pb^q+)轰击Si(110)晶面,测量不同入射角情况下的次级粒子的产额. 通过比较溅射产额与入射角的关系,证实沟道效应的存在. 高电荷态离子与Si相互作用产生的沟道效应说明溅射产额主要是由动能碰撞引起的. 在小角入射条件下,高电荷态离子能够增大溅射产额. 当高电荷态离子以40°—50°入射时,存在势能越高溅射产额越大的势能效应. 关键词： 高电荷态离子 溅射 沟道效应     

The energy dependence and depth distribution of lattice disorder in ion-implanted silicon

Silicon single crystals were implanted at room temperature with Xe and I ions in the energy range 20 to 150 keV and with 20 to 50 keV P ions. The lattice disorder induced by these implants was measured by a combination of the channeling and Rutherford backscattering techniques. The disorder produced by implanting I and Xe ions exhibited a similar relationship with implantation energy to that previously established for bismuth implants. The P ion implants induced less lattice disorder per incident ion in the energy range studied. Integral depth distributions of the implanted ions and of the lattice disorder were obtained by combining a layer removal technique with radiotracer implants of 110 keV ¹³³Xe and 40 keV ³²P. The depth distributions showed that in both cases the ions penetrate deeper into the crystal than the damage they produce but that the separation is significantly greater for the P implant than for the Xe implant.     

A Monte Carlo simulation study of boron profiles as-implanted into LPCVD-NiDoS polycrystalline thin films

This work presents a Monte Carlo simulation study of boron profiles obtained from as-implanted ions into thin films nitrogen doped silicon (NiDoS) thin films. These films are performed by LPCVD technique from Si₂H₆ and NH₃ gas sources, four values deliberately chosen, of the ratio NH₃/Si₂H₆ to obtain samples, differently in situ nitrogen-doped. Taking into account the effect of the codoping case, and the structure specificity of these films, an accurate Monte Carlo model based on binary collisions in a multi-atomic target was performed. Nitrogen atoms present in the target is shown to affect the boron profiles and confirms clearly a reduction penetration effect which becomes more significant at high nitrogen concentrations. Whereas, the fine-grained polysilicon structure, and thus the presence of grains (G) and grain boundaries (GB), is known to enhance the opposite phenomenon by assuming an effective role played by GB's in the scattering calculation process of the incident ions. This role is represented by the change in direction of the incident ion after interaction with GB without corresponding loss in its energy.The results obtained show an enhancement of the stopping parameter when nitrogen concentration increases, while the GB interaction remains very important. This behavior is due to a great number of GB's interactions with boron atoms which gave low deflection angles. So that, the average positions described by the sequences of trajectories took place farther than what expected with channeling effect in crystal silicon materials.     

Hg ION implantation in silicon: Lattice disorder created and hg atom lattice location

Abstract

The lattice disorder produced by 42-keV and 75-keV Hg ions implanted in Silicon at room temperature and the lattice location of the Hg atoms were studied by means of the channeling technique with a 2.0 MeV ⁴He⁺ beam. The damage produced was found to increase linearly with ion dose until a saturation value, connected to the ion range, is reached. The number of Si atoms displaced for Hg ion implanted was evaluated and compared with the theoretical expectation. The substitutional Hg fraction is connected to the disorder produced: the replacement mechanism is discussed.     

Complex structure of resonant coherent excitation peaks for heavy relativistic hydrogen-like ions under planar channeling

The computer model for the resonant coherent excitation of heavy relativistic ions under planar channeling in crystals taking into account the fine structure of the energy levels of the orbital electron and the ion ionization from both the ground and first excited state is presented. The model has been used to explain the experiments carried out under planar channeling of 390 MeV/n ¹⁷⁺Ar ions. Reasonably good agreement for the calculated and experimental data has been obtained.     

Probing a cooled beam of decelerated highly-charged heavy ions extracted out of the ESR by a channeling experiment

A cooled beam of decelerated highly-charged heavy ions is slowly extracted out of the cooler and storage ring ESR, by combining the deceleration technique and the charge exchange extraction mode. The quality of the external ion beam is tested by a channeling experiment. Bare Au⁷⁹⁺ ions are injected into the ESR at an energy of 360 MeV/u, decelerated to 53 MeV/u, and finally cooled strongly in the electron cooler. By breeding of neighboring charge state ions via radiative recombination in the electron cooler H-like ions are produced. The H-like ion fraction is extracted out of the storage ring. This extracted Au⁷⁸⁺ ion beam is probed by a channeling experiment measuring the extinction rate of the projectile Kα X-ray yield around the [110] axis of a thin silicon crystal. This revised version was published online in August 2006 with corrections to the Cover Date.     

The channeling of light ions in the cubic and tetragonal (ferroelectrically polarized) phases of BaTiO3

Abstract

The channeling properties of thin BaTiO₃ crystals at temperatures both above and below the ferroelectric Curie point (T _c ? 120°C)have been measured with 3.8 MeV protons. In the cubic phase (T > T _c ), values for critical angles and minimum yields, have been measured for the major crystal axes and planes by detecting backscattered and transmitted protons, and characteristic X-rays. These values are compared with those predicted by current theories of ion channeling. In the tetragonal phase (T < T _c ), measurements were made with single ferroelectric domains. The channeling characteristics of the (100) planes in BaTiO₃ are found to be strongly dependent on the relative orientations of the electric polarization vector P, the (100) planes, and the beam direction. For example, when P lies in the channeling plane, strong channeling occurs; but when P is normal to the plane, the incident beam is rapidly dechanneled. These effects are attributed to the relatively large ionic displacements, and the strong internal electric fields in the ferroelectrically polarized state.     

Peculiarities of heavy ion channeling

Abstract

Depth distributions of implanted Mg⁺- and Ca⁺-ions and the corresponding radiation damage were studied for different channeling orientations of silicon crystals. The shape of the implantation profiles is discussed by using simple models for dechanneling and energy loss processes. A correlation between dechanneling, damage production and depth distributions of the channeled ions could be observed. This correlation is seen by the maxima shifts in damage and implanted ion distributions between channel and random incidence.     

The influence of incidence angle on disorder production in Cl and Ar ion implanted Si

Abstract

Cl and Ar ions have been implanted, at 30 keV and at various incidence angles, into Si substrates maintained at room temperature during implantation. Implantation induced Si disorder was measured using RBS channelling. The effects upon disorder of various incidence angles were studied over a fluence range of 10¹²-6·10¹⁵ ions·cm^?2

The results show that, at low fluences Cl and Ar ion implantations generate a bimodal disorder-depth profile, whilst at higher fluences measurements of amorphised layer thickness as a function of ion incidence angle allow values of the standard deviation of the disorder profile parallel and transverse to the ion beam direction for each ion to be obtained with good agreement to theoretical predictions. The disorder-fluence behaviour under these conditions is ion species independent.     

Critical parameters of channeling

Basic methods for calculating critical channeling parameters that play a decisive role in the problem of dechanneling of ions are reviewed. The analytic expressions derived for the threshold energy of channeling, the critical transverse energy, and the closest approach distance between particles and atomic chains or planes forming the channels, as well as critical angles of axial and planar channeling, are valid in a wide range of particle energies. The dependence of critical parameters of channeling on the temperature of crystals is analyzed.     

Study on the orientation of silver films by ion-beam assisted deposition

Low energy ion beam assisted deposition (IBAD) was employed to prepare Ag films on Mo/Si (100) substrate. It was found that Ag films deposited by sputtering method without ion beam bombardment were preferred (111) orientation. When the depositing film was simultaneously bombardment by Ar⁺ beam perpendicular to the film surface at ion/atom arrival ratio of 0.18, the prepared films exhibited weak (111) and (200) mixed orientations. When the direction of Ar⁺ beam was off-normal direction of the film surface, Ag films showed highly preferred (111) orientation. Monte Carlo method was used to calculate the sputtering yields of Ar⁺ ions at various incident and azimuth angles. The effects of channeling and surface free energy on the crystallographic orientation of Ag films were discussed.     

The effect of incidence angle on disorder production in ion implanted Si

Abstract

Ne, Ar, Sb, and Xe ions have been implanted, at 30 keV or 80 keV and at various incidence angles, into Si substrates maintained at room temperature during implantation. Implantation-induced Si disorder was measured using RBS-channelling. The effects upon disorder of various incidence angles were studied over a fluence range of 10¹²-10¹⁶ ions·cm^?2.

The results show that, at low fluences the lighter (Ne) and slightly heavier (Ar) ion implantations generate a bimodal disorder-depth profile, whilst at higher fluences measurements of amorphised layer thickness as a function of ion incidence angle allow values of the standard deviation of the disorder profile parallel and transverse to the ion beam direction for each ion to be obtained with good agreement to theoretical predictions.     

ABNORMAL ENERGY DEPENDENCE OF AXIAL MINIMUM CHANNELING YIELDS IN GexSi1-x/Si(100) STRAINED

An energy dependence of the axial minimum channeling yield in Ge_xSi_1-x/Si(100) Strained-layer superlattice is observed in the energy range of impinging He⁺ ione from 1.2 to 3.0 MeV. For [100] axial channeling, the measurements ere in agreement with what have been known in a single crystal. However, for [110] axial channeling, it is found that the minimum channeling yields increase markedly with the increase of He⁺ ion energy, which is contrary to the general channeling behaviors in a single crystal. A tentative model is suggested to explain this aberrance.     

Modification of the theory of diffracted channeling radiation for axial electron and positron channeling

A new type of combinational channeling radiation induced by subbarrier (interband) transitions for the transverse motion of relativistic electrons (positrons) is studied. It is known as diffracted channeling radiation (DCR). The formula describing the DCR angular distribution in the case of axial channeling is obtained by taking into account the band structure of energy levels for the transverse motion of electrons (positrons). It is shown that, in the two-wave approximation of the wave function A(r) of virtual photons, the DCR matrix elements in the dipole approximation for axial and plane channeling coincide formally (with the dimension of the problem taken into account). However, the formulas for DCR angular distributions in the cases of axial and plane channeling differ considerably.     

铒离子注入6H-SiC的横向离散研究

利用离子注入掺杂技术设计、制作半导体集成器件时,了解离子注入半导体材料的射程分布、射程离散和横向离散规律等是很重要的.用400 keV能量的铒(Er)离子分别与样品表面法线方向成0°,45°和 60°倾角注入碳化硅(6H-SiC)晶体中,利用卢瑟福背散射技术研究了剂量为5×10¹⁵ cm^-2 的400 keV Er离子注入6H-SiC晶体的横向离散.测出的实验值与TRIM98和SRIM 2006得到的理论模拟值进行了比较,发现实验值跟TRIM98和SRIM 关键词： 离子注入 6H-SiC 卢瑟福背散射技术 横向离散     

Micro‐Raman depth profiling of silicon amorphization induced by high‐energy ion channeling implantation

In this work, we study the silicon amorphization dependence on the crystal depth induced by 6‐MeV Al²⁺ ions implanted in the <110> and randomly oriented silicon crystal channels, which was not directly experimentally accessible in the previous similar high‐energy ion–crystal implantation cases. Accordingly, the micro‐Raman spectroscopy scanning measurements along the crystal transversal cross section of the ion implanted region were performed. The ion fluence was 10¹⁷ particles/cm². The scanning steps were 0.2 and 0.3 µm, for the channeling and random ion implantations, respectively. The obtained results are compared with the corresponding Rutherford backscattering spectra of 1.2‐MeV protons in the random and channeling orientations measured during the channeling implantation. Additionally, scanning electron microscope picture was taken on the transversal cross section of the implanted region in the channeling implantation case. We show here that the obtained silicon amorphization maxima are in excellent agreement with the corresponding estimated maxima of the aluminum concentration in silicon. This clearly indicates that the used specific micro‐Raman spectroscopy scanning technique can be successfully applied for the depth profiling of the crystal amorphization induced by high‐energy ion implantation. Copyright © 2013 John Wiley & Sons, Ltd.     

Ranges and profiles of distribution of low-energy ions channeling in metal and semiconductor single crystals

In the present work peculiarities of trajectories and energy losses, ranges and profiles of distribution of low-energy different-mass ions channeling in thin single crystals of metals and semiconductors have been thoroughly studied by computer simulation in binary collision approximation. The character of oscillations of channeled-ion trajectories depending on their energies, aiming points from the axis of a channel, kind of interaction potential, crystal lattice type and temperature has been determined. It has been found that, in the case of light ions even at low energy, the main contribution to energy loss is made by inelastic energy losses, whereas for heavy ions, already at E < 10 keV, elastic energy losses exceed inelastic ones. Profiles of the distribution of channeled ions have been calculated depending on crystal lattice type, kind of ions and their energy.     

Study on the dynamic energy spectra of mev heavy ions penetrating biological sample

In order to study the probability for heavy ions to have a long projectile range in botanic sample, transmission energy spectra of 1.5 MeV F⁺, 3 MeV F²⁺ and 1.5 MeV H⁺ penetrating 100 µm seed cotyledon samples were measured as a function of ion dose. Results show that very fewer ions can penetrate through the samples, though their theoretical ranges are much shorter than sample thickness. Besides, the measured energy spectra of 1.5 MeV and 3.0 MeV F ions change dynamically while increasing the ion dose, they extend to the high energy direction and the count rates of the transmission ions increases quickly. These phenomena can be understood with the special composition and structure of the biological material.     

Proton channeling studies in thin crystals with a supercollimated beam

Abstract

A supercollimated beam of 4 MeV H^? ions with an angular spread of 1.5 × 10^?3 degrees, a diameter of 25 μ and a current of 10 picoamps was used to study the axial and planar channeling characteristics of single crystal silicon samples ranging in thickness from 0.5 to 1.0 μ. Since the angular spread of the beam is much smaller than most of the gross angular phenomena associated with channeling, it is possible to study the detailed characteristics of both planar and axial channeling with greater precision than before. Preliminary results indicate that this technique will allow a direct study of interatomic or continuum potential distributions and will also be useful for studying nuclear multiple scattering as a function of the tranverse energy of channeled particles relative to atomic rows and planar directions.