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1.
Silicon oxynitride films, possessing various compounds of SiO2 and Si3N4, were deposited by ion beam sputtering at room temperature. This technique can easily and precisely control the refractive
index and composition of the silicon oxynitride film. Properties of these films, such as the refractive index, the extinction
coefficient, the surface roughness, and so on were measured in this study. 相似文献
2.
Secondary ion species from plasma-enhanced chemical vapor deposited (PECVD) SiO2 films have been investigated using time-of-flight secondary ion mass spectrometry (TOF-SIMS). Comparative studies of PECVD SiO2 films prepared using a mixture of SiH4/N2O reaction gas at 400 °C with thermally oxidized SiO2 films grown at 900 °C were carried out in the mid-range mass spectra from 95 to 165 amu. Small amounts of ion species containing nitrogen atoms, including Si2O2N+, Si3O2N+and Si3O3N+, were detected in the SiO2 bulk from the PECVD SiO2 films. Furthermore, large amounts of Si3O2N+ and Si2O3N− were found at the interface between silicon and the SiO2 films. Depth analysis showed that the intensity peak shapes of these ion species containing nitrogen atoms at the interface were closely coincident with those of Si3O3+ corrected by subtracting the influence of the SiO2 matrix. The variation in the spectra of these ion species clearly indicates that two types of structures of oxynitride exist for the PECVD SiO2 films in the SiO2 bulk films and at the interface. These are likely produced by the reaction of reactive gas with SiO2 and silicon surfaces where dangling bonds of silicon may exist in the different form. 相似文献
3.
In Auger Electron Spectrometry relatively high primary electron current density is usually used in order to obtain a good signal-to-noise ratio. As a consequence, a number of phenomena occurs, which can substantially modify—or even destroy—the sample, and impair the results of the analysis. In this communication we report some observations on the electron and ion beam interaction on some of the insulating and conducting films used in the silicon device technology. Among the materials considered, silicon nitride and P-doped silicon dioxide are of primary interest, and will be treated in some detail; results on other films, both insulating (Al2O3, B-doped SiO2, etc.) and conducting (Al-Si alloys) will also be reported. The electron beam causes the oxides (B, Al, Si, P) to be reduced, as shown by the decrease of the height of the low energy, chemically shifted peaks (BKVV, AlLVV, SiLvv, PLvv) and by the contemporary increase of the height of the elemental peaks. In phosphorus doped glasses the electron beam also induces a strong surface P enrichment, followed by a P desorption. Silicon nitride was found to be quite stable against the e-b irradiation in “good” vacuum, but very sensitive to the e-b induced oxidation even at (total) pressure as low as 5 × 1010 torr. This is a very important fact to be taken into account when evaluating thin Si3N4 films, because it can change the apparent film stoichiometry. Some metallic films are also preferentially oxidized by the electron beam; in Al/Si diluted alloy (0.1÷2% silicon) a strong surface silicon enrichment was found to take phase on small-grained thin films, but not on bulk material. Our results show that much care has to be taken when performing or interpreting the AES data, and how to use, in some cases, the e-b irradiation effects to increase the sensitivity of the method. 相似文献
4.
S. S. Elovikov E. Yu. Zykova S. A. Postnikov Yu. A. Ryzhov I. I. Shkarban V. E. Yurasova 《Bulletin of the Russian Academy of Sciences: Physics》2007,71(5):738-741
The radiation resistance of heat-proof ceramics based on boron nitride (BN + Si3N4 and BN + SiO2), which are proposed to be used as structural materials in space ion engines, to low-energy electron irradiation has been investigated. 相似文献
5.
S. S. Elovikov V. E. Yurasova Yu. A. Ryzhov S. A. Khartov I. I. Shkarban R. S. Gvozdover 《Journal of Surface Investigation: X-ray, Synchrotron and Neutron Techniques》2008,2(6):934-943
The low-energy electron radiation resistance of boron nitride-based BN + Si3N4 and BN + SiO2 ceramics proposed as a construction material for ion space engines was studied. It was shown that a reduced silicon phase is formed on the BN + Si3N4 ceramics surface in the high-temperature region (~900 K), which results from material thermal destruction. The BN + SiO2 ceramics exhibits high thermal stability and is not prone to destruction due to electron-stimulated oxygen desorption (the cross section of this process does not exceed 10?20 cm2). It is preferable to use such ceramics as a construction material. Based on the results obtained, some models were proposed that explain variations in the erosion rate of ceramic units of ion engines under electron and ion irradiation. 相似文献
6.
Sapphire is a desired material for infrared-transmitting windows and domes because of its excellent optical and mechanical properties. However, its thermal shock resistance is limited by loss of compressive strength along the c-axis of the crystal with increasing temperature. In this paper, double layer films of SiO2/Si3N4 were prepared on sapphire (α-Al2O3) by radio frequency magnetron reactive sputtering in order to increase both transmission and high temperature mechanical performance of infrared windows of sapphire. Composition and structure of each layer of the films were analyzed by X-ray photoelectron spectroscopy (XPS) and X-ray diffraction (XRD), respectively. Surface morphology and roughness of coated and uncoated sapphire have been measured using a talysurf. Flexural strengths of sapphire sample uncoated and coated with SiO2/Si3N4 have been studied by 3-point bending tests at different temperatures. The results show that SiO2/Si3N4 films can improve the surface morphology and reduce the surface roughness of sapphire substrate. In addition, the designed SiO2/Si3N4 films can increase the transmission of sapphire in mid-wave infrared and strengthen sapphire at high temperatures. Results for 3-point bending tests indicated that the SiO2/Si3N4 films increased the flexural strength of c-axis sapphire by a factor of about 1.4 at 800 °C. 相似文献
7.
In this paper, a new gate-recessed AlGaN/GaN-based high electron mobility transistor (HEMT) on SiC substrate is proposed and its DC as well as microwave characteristics are discussed for Si3N4 and SiO2 passivation layers using technology computer aided design (TCAD). The two-dimensional electron gas (2DEG) transport properties are discussed by solving Schr?dinger and Poisson equations self-consistently resulting in various subbands having electron eigenvalues. From DC characteristics, the saturation drain currents are measured to be 600?mA/mm and 550?mA/mm for Si3N4 and SiO2 passivation layers respectively. Apart from DC, small-signal AC analysis has been done using two-port network for various microwave parameters. The extrinsic transconductance parameters are measured to be 131.7?mS/mm at a gate voltage of V gs?= ?0.35?V and 114.6?mS/mm at a gate voltage of V gs?= ?0.4?V for Si3N4 and SiO2 passivation layers respectively. The current gain cut-off frequencies (f t) are measured to be 27.1?GHz and 23.97?GHz in unit-gain-point method at a gate voltage of ?0.4?V for Si3N4 and SiO2 passivation layers respectively. Similarly, the power gain cut-off frequencies (f max) are measured to be 41?GHz and 38.5?GHz in unit-gain-point method at a gate voltage of ?0.1?V for Si3N4 and SiO2 passivation layers respectively. Furthermore, the maximum frequency of oscillation or unit power gain (MUG = 1) cut-off frequencies for Si3N4 and SiO2 passivation layers are measured to be 32?GHz and 28?GHz respectively from MUG curves and the unit current gain, ?O?h 21??O?=?1 cut-off frequencies are measured to be 140?GHz and 75?GHz for Si3N4 and SiO2 passivation layers respectively from the abs ?O?h 21??O curves. HEMT with Si3N4 passivation layer gives better results than HEMT with SiO2 passivation layer. 相似文献
8.
D. M. Zhigunov I. A. Kamenskikh A. M. Lebedev R. G. Chumakov Yu. A. Logachev S. N. Yakunin P. K. Kashkarov 《JETP Letters》2017,106(8):517-521
The structural properties and features of the chemical composition of SiO x N y /SiO2, SiO x N y /Si3N4, and SiN x /Si3N4 multilayer thin films with ultrathin (1–1.5 nm) barrier SiO2 or Si3N4 layers are studied. The films have been prepared by plasma chemical vapor deposition and have been annealed at a temperature of 1150°С for the formation of silicon nanocrystals in the SiO x N y or SiN x silicon-rich layers with a nominal thickness of 5 nm. The period of superlattices in the studied samples has been estimated by X-ray reflectivity. The phase composition of superlattices has been studied by X-ray electron spectroscopy using the decomposition of photoelectron spectra of the Si 2p, N 1s, and O 1s levels into components corresponding to different charge states of atoms. 相似文献
9.
《Applied Surface Science》1997,115(2):166-173
Ion beam nitridation of Si(100) as a function of N+2 ion energy in the range of 2–10 keV has been investigated by in-situ Auger electron spectroscopy (AES) analysis and Ar+ depth profiling. The AES measurements show that the nitride films formed by 4–10 keV N+2 ion bombardment are relatively uniform and have a composition of near stoichiometric silicon nitride (Si3N4), but that formed by 2 keV N+2 ion bombardment is N-rich on the film surface. Formation of the surface N-rich film by 2 keV N+2 ion bombardment can be attributed to radiation-enhanced diffusion of interstitial N atoms and a lower self-sputtering yield. AES depth profile measurements indicate that the thicknesses of nitride films appear to increase with ion energy in the range from 2 to 10 keV and the rate of increase of film thickness is most rapid in the 4–10 keV range. The nitridation reaction process which differs from that of low-energy (< 1 keV) N+2 ion bombardment is explained in terms of ion implantation, physical sputtering, chemical reaction and radiation-enhanced diffusion of interstitial N atoms. 相似文献
10.
The structure of SiOx (x = 1.94) films has been investigated using both X-ray photoelectron spectroscopy (XPS) and time-of-flight secondary ion mass spectrometry (TOF-SIMS). The SiOx films were deposited by vacuum evaporation. XPS spectra show that SiO1.94 films are composed of silicon suboxides and the SiO2 matrix. Silicon clusters appeared only negligibly in the films in the XPS spectra. Si3O+ ion species were found in the TOF-SIMS spectra with strong intensity. These results reveal the structure of the films to be silicon monoxide embedded in SiO2, and this structure most likely exists as a predominant form of Si3O4. The existence of Si-Si structures in the SiO2 matrix will give rise to dense parts in loose glass networks. 相似文献
11.
Some insulating films—like SiO2, P-doped SiO2, B-doped SiO2, K-silica glasses, SiaN4, and alumina—are of primary interest in silicon device technology. In this work the main problems concerning the electron and ion beam interactions with these materials when performing Auger analyses are outlined. A few examples of radiation effects are provided. Among these, electron stimulated desorption as well as ion beam induced adsorption and oxide reduction are treated in some detail. General trends in avoiding charging problems with Auger Electron Spectroscopy are provided. 相似文献
12.
In this work, we investigated the effect of water-vapor treatment on the surface morphology of SiO2 and Si3N4 insulators before and after Co60 gamma-ray irradiation by using the atomic force microscopy (AFM) operated under non-contact mode. Before irradiation, no apparent surface morphology change was found in SiO2 samples even they were water vapor treated. However, bright spots were found on post-irradiated water-vapor-treated SiO2 sample surfaces but not on those without water-vapor treatment. We attributed the bright spots to the negative charge accumulation in the oxide due to charge balancing between hydroxyl (OH−) ions adsorbed on SiO2 surface and electron-hole pairs (ehps) generated during irradiation since they can be annealed out after low temperature annealing process. On the contrary, no bright spots were observed on post-irradiated Si3N4 samples with and without water-vapor treatment. This result confirms that Si3N4 is a better water-resist passivation layer than SiO2 layer. 相似文献
13.
Secondary ion species of silicon oxide films have been investigated using time-of-flight secondary ion mass spectrometry (TOF-SIMS). Characterization of thermally grown SiO2 films on silicon has been performed. A diagram showing secondary ion spectra of SiO2 films in both positive and negative polarities indicates the pattern of change in polarities and intensities of ion species from SiO+ to Si5O11−. The ions mostly change from positive to negative polarity between SinO2n−1 and SinO2n. Ion peaks with the strongest intensities in the respective cluster ions correspond to the SinO2n+1 negative ion. Intensities of ion species of SinO2n+2 appear negligibly small. Ion species of Si3O+, Si3O2+ and Si3O3+ have been found at the interface between silicon and SiO2 films. The intensity patterns of these ion species compared to those of SiO2 films indicate that most of these species are not emitted from the SiO2 films, but likely from the SiO structures. 相似文献
14.
Gao Bo Liu Gang Wang Li-Xin Han Zheng-Sheng Song Li-Mei Zhang Yan-Fei Teng Rui Wu Hai-Zhou 《中国物理 B》2013,22(3):36103-036103
Total dose effects and single event effects on radiation-hardened power vertical double-diffusion metal oxide semiconductor (VDMOS) devices with composite SiO2-–Si3N4 film gate are investigated. The relationships among the important electrical parameters of the samples with different thickness SiO2-–Si3N4 films, such as threshold voltage, breakdown voltage, and on-state resistance in accumulated dose, are discussed. The total dose experiment results show that the breakdown voltage and the on-state resistance barely change with the accumulated dose. However, the relationships between the threshold voltages of the samples and the accumulated dose are more complex, not only positive drift, but also negative drift. At the end of the total dose experiment, we select the group of samples which have the smaller threshold voltage shift to carry out the single event effect studies. We find that the samples with appropriate thickness ratio SiO2-–Si3N4 films have a good radiation-hardening ability. This method may be useful in solving both the SEGR and the total dose problems with the composite SiO2-–Si3N4 films. 相似文献
15.
采用离子束增强沉积方法在Si和SiO2/Si衬底上制备In-N共掺杂ZnO薄膜(INZO),溅射靶是用ZnO和2 atm% In2O3粉体均匀混合并压制而成,在氩离子溅射ZnO靶的同时,氮、氩混合离子束垂直注入沉积的薄膜.实验结果显示INZO薄膜具有(002)的择优取向,并且为p型导电,电阻率最低为0.9Ωcm.薄膜在氮气、氧气气氛下退火,对薄膜的结构和电学特性与成膜和退火条件的关系进行了分析.
关键词:
氧化锌薄膜
p型掺杂
离子束增强沉积 相似文献
16.
Klaus Bethge 《Zeitschrift für Physik A Hadrons and Nuclei》1961,162(1):34-45
An ion source is described where a beam of lithium ions is directly emitted from a platinum filament coated with the lithium mineralΒ-eucryptite. Charge exchange cross sections were measured in the energy range from 3 to 10 keV for the gases A, N2, N2O, H2, O2, CH4, CCl2F2 and air. The results in this energy range agree with the adiabatic hypothesis of Massey. The uncharged particles were detected by means of a secondary electron emission detector. The secondary electron emission yield for a Cu-Be and a Ag-Mg surface by bombardment with lithium ions was measured. 相似文献
17.
为了揭示Ti_Si_N复合膜中Si3N4界面相的存在方式及其对薄膜力学 性能的影响 ,采用x射线衍射仪、高分辨透射电子显微镜、俄歇电子能谱仪和显微硬度仪对比研究了磁 控溅射Ti_Si_N复合膜和TiN/Si3N4多层膜的微结构和力学性能. 实 验结果表明 ,Ti_Si_N复合膜均形成了Si3N4界面相包裹TiN纳米晶粒的微结构. 其中低Si 含量的Ti_Si_N复合膜中Si3N4界面相的厚度小于1nm,且以晶体态 存在,薄膜 呈现高硬度. 而高Si含量的Ti_Si_N复合膜中的Si3N4界面相以非晶 态存在,薄 膜的硬度也相应降低. 显然,Ti_Si_N复合膜中Si3N4界面相以晶体 态形式存在 是薄膜获得高硬度的重要微结构特征,其强化机制可能与多层膜的超硬效应是相同的.
关键词:
Ti-Si-N复合膜
界面相
微结构
超硬效应 相似文献
18.
《Current Applied Physics》2007,7(5):561-573
Various oxide films, such as SnO2, In2O3, Al2O3, SiO2, ZnO, and Sn-doped In2O3 (ITO) have been deposited on glass and polymer substrates by advanced ion beam technologies including ion-assisted deposition (IAD), hybrid ion beam, ion beam sputter deposition (IBSD), and ion-assisted reaction (IAR). Physical and chemical properties of the oxide films and adhesion between films and substrates were improved significantly by these technologies. By using the IAD method, non-stoichiometry, crystallinity, and microstructure of the films were controlled by changing assisted oxygen ion energy and arrival ratio of assisted oxygen ion to evaporated atoms. IBSD method has been carried out for understanding the growth mode of the films on glass and polymer substrate. Relationships between microstructure and electrical properties in ITO films on polymer and glass substrates were intensively investigated by changing ion energy, reactive gas environment, substrate temperature, etc. Smooth-surface ITO films (Rrms ⩽ 1 nm and Rp−v ⩽ 10 nm) for organic light-emitting diodes were developed with a combination of deposition conditions with controlling microstructure of a seed layer on glass. IAR surface treatment enormously enhanced the adhesion of oxide films to polymer substrate. In the case of Al2O3 and SiO2 films, the oxygen and moisture barrier properties were also improved by IAR surface treatment. The experimental results of the oxide films prepared by the ion beam technologies and its applications will be represented in detail. 相似文献
19.
Kiyoshi Chiba 《Applied Surface Science》2010,256(6):1641-1646
Intensities of positive and negative ion species emitted from thermally oxidized and plasma-enhanced chemical vapor deposited (PECVD) SiO2 films were analyzed using time-of-flight secondary ion mass spectrometry (TOF-SIMS) and the Saha-Boltzmann equation. Intensities of positive and negative secondary ion species were normalized to those of 28Si+ and 28Si− ions, respectively, and an effective temperature of approximately (7.2 ± 0.1) × 103 K of the sputtered region bombarded with pulsed 22 kV Au3+ primary ions was determined. Intensity spectra showed polarity dependence on both n and m values of SinOm fragments, and a slight shift to negative polarity for PECVD SiO2 compared to thermally oxidized SiO2 films. By dividing the intensity ratios of negative-to-positive ions for PECVD SiO2 by those for thermally oxidized SiO2 films to cancel statistical factors, the difference in absolute electronegativity (half the sum of ionization potential and electron affinity of fragments) between both films was obtained. An increase in electronegativity for SiOm (m = 1, 2) and Si2Om (m = 1-4) fragments for PECVD SiO2 films compared to thermally oxidized films was obtained to be 0.1-0.2 Pauling units, indicating a more covalent nature of Si-O bonds for PECVD SiO2 films compared to the thermally oxidized SiO2 films. 相似文献
20.
Z. Novotný 《Czechoslovak Journal of Physics》1988,38(3):338-342
Reactive ion etching (RIE) and plasma etching (PE) of different materials (GaAs, Si3N4 SiO2 and photoresist Microposit 1350 H) in freon 116 are compared in the present article. The importance of ion bombardment for the etching rate is evident from the experimental results. GaAs is etched only by RIE due to ion milling, the etching rates of Si3N4 and SiO2 are 4 to 5 times higher by RIE than PE. 相似文献