Secondary ion emission from Si bombarded with large Ar cluster ions under UHV conditions

Si was bombarded with size-selected 40 keV Ar cluster ions and positive secondary ions were measured using the time-of-flight technique under high and ultra-high vacuum (HV and UHV respectively) conditions. Si⁺ ions were main species detected under the incidence of 40 keV Ar cluster ions, and the yields of Si cluster ions such as Si₄⁺ were also extremely high under both conditions. On the other hand, oxidized secondary ions such as SiO⁺ were detected with high intensity only under the HV condition. The yield ratios of oxidized ions decreased in UHV to less than 1% of their values in HV. The effect of residual gas pressure on Si cluster ion yields is relatively low compared to oxidized ions, and the UHV condition is required to obtain accurate secondary ion yields.     

Secondary ion mass spectra of alkali halides

Mass spectra of positive and negative secondary ions from various alkali halides have been measured in the Manitoba time-of-flight mass spectrometer. The ions were produced by Cs⁺ and K⁺ bombardment at primary ion energies of 3 to 19 keV for the positive spectra, and 11 to 28 keV for the negative spectra. The ions measured were those emitted within a time interval ～ 20 ns after the primary ion impact. The secondary ion yields are strongly dependent on the sample composition and treatment; prior irradiation may change the yield by an order of magnitude or more. The secondary ion yields also depend strongly on the energy loss of the primary ion, but the ratio of yields of different cluster ions from a given target is almost independent of this parameter. The results appear to be consistent with models in which the clusters are ejected directly from the target, but do not determine whether or not they possess the original surface structure. The results may also be described by a recombination model if the recombination is essentially complete.     

The dose dependence of 45 keV V+ and Bi+Ion sputtering yield of copper

The sputtering yield of 45 keV V⁺ ions on copper is found to decrease with increasing dose even for very large doses, whilst the yield of 45 keV Bi⁺ ions on copper increases with increasing dose until approximately ten times the projected range of the Bi⁺ ions has been sputtered away. The fate of the incoming V⁺ and Bi⁺ ions was investigated. A radiotracer technique showed that vanadium accumulated on the target surface, whilst bismuth diffused into the target, as was seen by means of Rutherford-scattering of light ions.     

Auger study of preferred sputtering on binary alloy surfaces

Auger Electron Spectroscopy has been used to investigate the preferred sputtering behavior on homogeneous Cu/Ni alloy surfaces. Measurements were made on a range of alloy compositions with Ar⁺ sputter ions of 0.5 to 2 keV energy. A kinetic model has been formulated to describe the time variation of the surface composition during sputtering. Based on this model, we were able to determine the individual sputter yields for Cu and Ni atoms in the alloy and the depth of the surface layer where the composition is altered by sputtering. The sputter yields were found to be relatively independent of the alloy composition but increased almost linearly with energy. The depth of the altered layer was comparable to the Auger sampling depth with its value increasing from 10 Å to more than 20 Å when ion energy increased from 0.5 to 2 keV.     

Low-energy nuclear reactions in crystal structures

Results of studying low-energy nuclear reactions at the HELIS facility (LPI) are presented. Investigations of yields from DD reactions in deuterated crystal structures at deuteron energies of 10 to 25 keV show a considerable enhancement effect. It is shown that exposure of the deuterated targets to the Н⁺ (proton) and Ne⁺ beams with energies from 10 to 25 keV and an X-ray beam with the energy of 20 to 30 keV stimulates DD reaction yields. For the CVD diamond target, it is shown that its orientation with respect to the deuteron beam affects the neutron yield. The D⁺ beam is shown to cause much higher heat release in the TiD_x target than the Н⁺ and Ne⁺ beams, and this heat release depends on the deuterium concentration in the target and the current density of the deuteron beam.     

Kinetic electron emission due to perpendicular impact of carbon ions on tungsten surfaces

Total electron yields for perpendicular impact of C⁺ ions on W have been measured for projectile energies from 0.2 keV to 7 keV. The data are compared with the data of C⁺ bombardment of gold and graphite in order to demonstrate general trends in kinetic electron yields at low projectile velocities. The total electron yields in the studied combinations of projectiles and substrates show a similar exponential dependence Γ ∝ (v/A) exp(−A/v), where A is a constant and v is the projectile velocity.     

A new technique for the measurement of sputtering yields

We have measured the yields of 90 keV ⁴⁰Ar⁺ and V⁴He⁺ sputtering of Mo and V samples by the use of a new radio-tracer technique. This technique involves activating the samples by high-energy charged-particle irradiation before sputtering, and using conventional γ-ray counting methods to analyze the material subsequently sputtered onto collector foils. We have also measured angular distributions of the sputtered material, and compared these results and our total sputtering yields with the predictions of Sigmund's sputtering theory. Further comparisons between our radiotracer results and those obtained for ⁴⁰Ar⁺ sputtering of unactivated Mo and V samples, determined from elastic backscattering measurements using 12 MeV ¹⁶O ions, show that the techniques give consistent results.     

稀土离子Ho+,Ce+,La+与H2碰撞的单电子俘获截面测量

在复旦大学加速器实验室的３０ｋｅＶ同位素分离器上，使用新近建立的一套用于单价离子与气体分子碰撞的单电子俘获截面测量装置，测量了５—３０ｋｅＶ Ho⁺,Ce⁺,La⁺与H₂碰撞的单电子俘获截面．实验发现中空型离子源的阳极电压的变化对于稀土离子的亚稳态比例有一定影响，同时造成了单电子俘获截面的很大变化，而阳极电压对Ａｒ⁺的影响很小．还对实验结果进行了分析 关键词：     

Sputtering yields for light ions as a function of angle of incidence

The sputtering yield of Ni, Mo, and Au have been measured at oblique angles of incidence for H⁺-, D⁺-, and⁴He⁺-ion irradiation in the energy region from 1 to 8 keV. The yields were determined from the weight loss of the targets. For Ni and Mo the dependence of the sputtering yield on the angle of incidence was found to be much stronger for H⁺- and D⁺-ion than for⁴He⁺-ion irradiation. In all cases the maximum in the yield was found at angles of incidence ϑ≧80°, where ϑ is the angle measured from the surface normal. Furthermore the ratio of the maximum yield to the yeild at normal incidence increases with increasing surface binding energy of the target material as well as with increasing ion energy in the energy region inveestigated. The results are discussed qualitatively in view of a model for the sputtering mechanism for light ions.     

Heavy-ion irradiations of Fe and Fe–Cr model alloys Part 1: Damage evolution in thin-foils at lower doses

The evolution of radiation damage in Fe and Fe–Cr alloys under heavy-ion irradiation was investigated using transmission electron microscopy. Thin foils were irradiated with 100 or 150 keV Fe⁺ and Xe⁺ ions at room temperature (RT) and 300°C. Dynamic observations followed the evolution of damage and the early stages in damage development are reported. Small (2–5 nm) dislocation loops first appeared at doses between 10¹⁶ and 10¹⁷ ions m^?2 in all materials. Loop number densities depended strongly on the foil orientation in pure Fe but not in Fe–Cr alloys. Number densities did not depend strongly on Cr content. For a given material, defect yields were higher for Xe⁺ ions than for Fe⁺ ions, and were higher at RT than at 300°C. Loops with both ?100? and ½?111? Burgers vectors were identified. The proportion of ?100? loops was larger, especially in pure Fe. Dynamic observations showed that: the contrast of some new loops developed over intervals as long as 0.2 s; hopping of ½?111? loops was induced by the ion and electron beams and was pronounced in ultra-pure iron; and many loops were lost during and after ion irradiation by glide to the foil surface. The number of loops retained was strongly dependent on the foil orientation in Fe, but less so in Fe–Cr alloys. This is due to lower loop mobility in Fe–Cr alloys, probably due to pinning by Cr atoms. Reduced loop loss probably explains the higher loop number densities in Fe–Cr alloys compared with pure Fe.     

Investigation of statistically perturbed angular correlations of154Gd and156Gd in different liquid sources

The statistical perturbations of γγ-angular correlations involving the first 2⁺ rotational state of¹⁵⁴Gd and¹⁵⁶Gd have been time differentially investigated. We used liquid sources of 3⁺ ions of Gadolinium in lN perchloric acid, 0.5 N and 1N hydrochloric acid, 1.3N and 2.6 N sulfuric acid. Influences of the various chemical surroundings on the ratio λ₄/λ₂ of the attenuation parameters have been found. A simultaneous measurement of the angular correlation of the 874 keV–123 keV cascade and the 2,098 keV–89 keV cascade of¹⁵⁴Gd and¹⁵⁶Gd, respectively, has been performed in perchloric solution. From the ratio of the attenuation parameters λ₂, obtained by this experiment, we have derived the ratio of the magneticg-factors of the first 2⁺ levels of these isotopes asg ¹⁵⁴/g ¹⁵⁶=1.11±0.08.     

Substrate effects on the analysis of biomolecular layers using Au, Au3 and C60 bombardments

Effects of platinum silicon, graphite and PET substrates on the secondary ion yield of sub-monolayer and multilayer samples of Cyclosporin A following 20 keV Au⁺, Au₃⁺and C₆₀⁺ impacts have been investigated. The obtained results of sub-monolayer samples show that platinum enhances the yield of the pseudo-molecular ion following Au⁺ and Au₃⁺ impacts due to the high density of the substrate that enables the energy of the primary ions to be deposited near the surface. C₆₀⁺ impacts on sub-monolayer samples are less effective, but there is an enhancement on PET substrates. Impacts of 20 keV Au⁺ and Au₃⁺ are not very efficient on multilayer samples. 20 keV C₆₀⁺ impacts enhance the yields significantly, especially for the relatively high molecular weight [M+H]⁺ ion.     

Reflection of keV heavy-ion beams from solid targets. Dependence on energy and angle of incidence

Recent experimental and theoretical studies of the reflection of keV heavy-ion beams have been extended to higher energies and to non-perpendicular incidence. The reflection coefficient for Na⁺ and K⁺ ions backscattered from polycrystalline gold and silver targets has been obtained for perpendicular incidence at energies of 100–500 keV. The dependence on angle of incidence has been investigated at 30 keV for the same combinations of targets and projectiles. Effects of electronic stopping have been included in the theoretical calculations. Good agreement between the experimental results and the theoretical calculations is found.     

Surface characteristics of V-Ga alloys after irradiation by Ar<Superscript>+</Superscript> and N<Superscript>+</Superscript> ions

V-5Ga-6Cr and V-5Ga-0.05Ce vanadium alloys irradiated by Ar⁺ and N⁺ ions with energies of 20 keV have been investigated. Irradiation by Ar⁺ and N⁺ ions leads to strengthening of the surface layers of samples. Their thicknesses exceed the projectile ranges of these ions (16.4 and 32.8 nm, respectively) in vanadium by more than two orders of magnitude. The experimentally determined penetration depth of argon ions is less that 70 nm. The sample side irradiated by Ar⁺ ions has a predominant orientation of crystallites in the (100) and (211) planes, while the unirradiated sample has a (110) surface. The lattice parameter of the irradiated sample does not differ from that of the initial sample. Possible mechanisms by which modified deep layers are formed during ion bombardment are discussed.     

Absolute measurement of sputtered ion fractions using matrix isolation spectroscopy

Sputtering yields for neutrals and ions have been measured by collecting the sputtered species in a noble gas matrix and determining their amounts from optical absorption spectroscopy. The atomic ion fractions for Ti and Zr bombarded by O₂⁺ at 2 keV are 0.8 and 0.4, respectively, whereas TiO and ZrO are sputtered largely as neutrals. Neutral sputtering yields from Ar⁺ bombardment arc consistent with previous measurements. The experimental results are compared with various theoretical models for the sputtering process.     

3s vacancy production in Ar+-Ar and Ar+-He collisions

The 3s vacancy production in Ar⁺-He and Ar⁺-Ar collisions has been studied at impact energies of 100 keV to 550 keV. A comparison is made for the Ar⁺-He system with theoretical calculations based on the quasi-molecular model.     

Theoretical energy distributions of atoms sputtered from elastic collision spikes by monomer and dimer ion bombardment

The energy spectra of atoms sputtered from metal targets by bombardment with heavy monomer and dimer ions have been investigated on the basis of a standard model for elastic collision spikes. In particular we calculated the energy distributions for a Au sample bombarded by 4 keV I⁺ and 8 keV I ₂ ⁺ ions. The results were compared with the recent time of flight measurements performed by de Vries and coworkers. It was shown that the model described accurately most of the experimental observations: the count rates and the relative cascade to spike ratios for both I⁺ and I ₂ ⁺ projectiles, and the energy spectrum for dimer sputtering. The spectrum for monomer bombardment, however, was shifted towards lower energies in comparison to the experimental one. The possible source of this discrepancy is discussed.This work was supported by the Central Research Program CPBP 01.09     

Exit angle dependence of charge-state distribution of backscattered He ions

Exit angle and energy dependences of the charge-state distribution of backscattered He ions were investigated when 500 keV He⁺ ions were incident on SiO₂. The energy dependence of the He⁺ fraction was estimated by comparing the measured He⁺ spectra with the simulated spectra of He ions in all charge states at the exit angles of 5-25° with respect to the SiO₂ surface. We found that the He⁺ fraction is almost independent of the exit angle at energies higher than 250 keV and the observed energy dependence of the He⁺ fraction is in good agreement with that for the carbon-foil-transmission experiment. In the low energy region (<250 keV), however, the He⁺ fraction decreases as the exit angle decreases.     

Preferential sputtering of TIC under keV Ar+ ion bombardment: Simultaneous sputtering-ISS measurement with He+ and Ar+ ions

The composition change of the outermost atom layer of TiC(110) under ion bombardment with 1.5–3 keV He⁺ and He⁺ + Ar⁺ ions has been measured by ion scattering spectroscopy with He⁺ ions at different sample temperatures. It has been found that the preferential sputtering of C atoms takes place for both the He⁺ and Ar⁺ ion bombardment, however the preferred sputtering is more pronounced for Ar⁺ ions than for He⁺ ions. The ion bombardment with He⁺ ions at elevated sample temperatures hardly results in any change in surface composition below ～800°C, while Ar⁺ ion bombardment results in C enrichment for elevated temperatures as reported so far.