Measurement of the continuum absorption coefficient of water vapor near 14400 cm−1 (0.694 μm)

The continuum absorption coefficient (CAC) of water vapor (k _cont) in the visible region is determined for the first time from the data of laboratory measurements. For this purpose, the absorption spectra of water vapor in the region 14395–14402 cm^?1 are recorded with the aid of a high-sensitivity photoacoustic spectrometer with a frequency-tunable single-pulse ruby laser, and the absorption measured in this transparency microwindow is compared with that calculated based on the HITRAN 2004 data bank. In the spectral region under study, k _cont = (0.53 ± 0.18) × 10^?9 cm^?1 mbar^?1 at a total pressure of a water vapor-nitrogen mixture of 1000 mbar and a temperature of 295 K. This value of the CAC is roughly 23% higher than the CAC value in the IO-CKD model of the continuum.     

The reaction of CH3 + O2: experimental determination of the rate coefficients for the product channels at high temperatures

The reaction of methyl radicals (CH₃) with molecular oxygen (O₂) has been investigated in high-temperature shock tube experiments. The overall rate coefficient, k₁ = k_1a + k_1b, and individual rate coefficients for the two high-temperature product channels, (1a) producing CH₃O + O and (1b) producing CH₂O + OH, were determined using ultra-lean mixtures of CH₃I and O₂ in Ar/He. Narrow-linewidth UV laser absorption at 306.7 nm was used to measure OH concentrations, for which the normalized rise time is sensitive to the overall rate coefficient k₁ but relatively insensitive to the branching ratio of the individual channels and to secondary reactions. Atomic resonance absorption spectroscopy measurements of O-atoms were used for a direct measurement of channel (1a). Through the combination of measurements using the two different diagnostics, rate coefficient expressions for both channels were determined. Over the temperature range 1590–2430 K, k_1a = 6.08 × 10⁷T^1.54 exp (−14005/T) cm³ mol⁻¹ s⁻¹ and k_1b = 68.6 T^2.86 exp (−4916/T) cm³ mol⁻¹ s⁻¹. The overall rate coefficient is in close agreement with a recent ab initio calculation and one other shock tube study, while comparison of k_1a and k_1b to these and other experimental studies yields mixed results. In contrast to one recent experimental study, reaction (1b) is found to be the dominant channel over the entire experimental temperature range.     

Microfabrication techniques used in Japan for VLSI and other devices

Lead films of thickness 100 Å, 250 Å. and 350 Å were vacuum deposited on AI and laser treated in air using single pulses (7 ns FWHM) from a Nd: glass laser operating in TEM₀₀ mode, at peak energy densities of 1.5-5.0 J/cm². Rutherford back-scattering of 1.8 MeV He⁺ ions was employed to determine the depth profiles of Pb in Al. Up to about 1.4 J/cm², we observe only evaporation loss of Pb and formation of Pb-rich cells on the surface. At higher energies, liquid phase diffusion of Pb is observed up to 4 J/cm², beyond which convection effects are seen. A quantitative analysis of data for 350 Å film at 3.0 J/cm² shows evidence of nonequilibrium segregation effects.     

Laser-triggered quasi-monoenergetic ion beams at a moderate intensity and pulse duration

Plasma produced by short laser pulses from thin homogeneous foils with light and heavy ions is capable of generating quasi-monoenergetic light ions. This happens for the tail of light ions near the front of heavy ions. It was found that this effect is well pronounced for a moderate laser intensity (～10¹⁸ W/cm²) and pulse duration (～1 ps) by using a 2D particle-in-cell simulation of the laser interaction with thin CD₂ foils. Quasi-monoenergetic deuterons form a jet from the rear side of the foil with the energy ～1 MeV. The conversion efficiency to these quasi-monoenergetic ions is 10^?3.     

Photophysics of the triple state of metal complexes of 9-anthracenecarboxylic acid

The triplet-triplet (T-T) absorption spectra and the T-T absorption decay kinetics are measured for solutions of 9-anthracenecarboxylic acid (ACA) and its complexes with metal ions (Cd³⁺ and Ln³⁺=Y³⁺, La³⁺, Ce³⁺, Eu³⁺, Gd³⁺, and Tb³⁺) in dimethylsulfoxide (DMSO) by the methods of flashlamp and laser pulse photolysis. The rate constants k _T of intracomplex quenching of the triplet state are measured for ACA complexes with ions Gd³⁺, Ce³⁺, Tb³⁺, and Eu³⁺. Larger values of k _T in complexes of ACA with paramagnetic ions Ce³⁺, Tb³⁺, and Eu³⁺, which have low-lying energy levels, compared to the values of k _T for complexes with other ligands (pyrene-3-sulfonate, pyrene-1,3,6,8-tetrasulfonate, and benzo[ghi]perylene-1,2-dicarboxylate) were explained by the lower energy of the triplet state of ACA (14400 cm^?1). For a complex with a paramagnetic ion Gd³⁺, which has no low-lying energy levels, the value of k _T is close to that measured by us earlier for the inner-sphere complex of pyrene-1,3,6,8-tetrasulfonate with the same ion. These results confirm our earlier assumption about the inner-sphere complexing of ACA with Ln³⁺ ions in DMSO.     

Quenching kinetics and small signal gain spectrum of the ZnI photodissociation laser

By photodissociation ZnI₂ with 193 nm (ArF) laser radiation, the rate constants for quenching of the upper and lower energy levels of the ZnI (B → X) laser by ZnI₂ have been measured to be (1.7 ± 0.2) × 10^-9 and (1.4 ± 0.4) × 10^-9 cm³ s^-1, respectively. Although the former rate constant was found to be laser intensity-dependent for I ? 10⁵ W cm^-2, the ZnI(B) state radiative lifetime was determined to be 26 ± 4 ns. Also, the small signal gain coefficient, g₀, of this molecular laser has a peak value of ? 15% cm^-1 at λ ? 602 nm and exceeds 5% cm^-1 for 591 nm ≤ λ ≤ 608 nm for a potential tuning range of at least 170 Å.     

Study of the fluence dependent interplay between laser induced material removal mechanisms in metals: Vaporization, melt displacement and melt ejection

Three quantitative methods, namely profilometry, high speed imaging and recoil momentum measurements using a ballistic pendulum, are used to determine the interplay of vaporization, melt displacement and melt ejection on nanosecond laser induced material removal. At low to moderate fluences (<7 J cm⁻²) material removal occurs via vaporization and melt displacement in aluminium. At high fluences (>7 J cm⁻²), material removal occurs predominantly via the explosive ejection of liquid droplets from the melt pool.     

The Effect of Pre-plasma and Self-focusing on Characteristics of Laser Produced Ions

Generation of various ion groups was studied using lasers of different pulse length and intensities. Up to thirteen ion subgroups have been distinguished when using the PALS iodine laser system in experiments that involve a laser interaction with a preformed plasma. In addition to generally accepted thermal, fast, and slow ion groups, the existence of the second fast (superfast) group was clearly proven. The threshold laser intensity I _L necessary fo appearance of nonlinear effects was confirmed to be × 10¹⁴W/cm² at our experimental conditions. Above this value, there exists an interval of laser focus positions in front of the target in which ions with significantly higher charge states and energies are produced, compared to experiments without pre-plasma interactions, due to nonlinear processes in preformed plasma.     

ZnSe:Co—nonlinear optical absorber for giant-pulse eye-safe lasers

ZnSe:Co²⁺ crystals were grown by the Bridgeman technique. Optical absorption measurements showed non-uniform distribution of Co²⁺ ions along the as-grown crystals. Using Pfann formula the distribution coefficient of Co²⁺ ions between crystal and melt was estimated to be 0.5. Transmission dependence on laser power at λ=1535 nm was investigated for different Co²⁺ ions concentration. Maximal final transmission was found for ZnSe samples containing 1.6×10¹⁹ cm⁻³ of Co²⁺ ions. Obtained ZnSe:Co²⁺ samples were used as saturable absorbers to generate giant-pulse eye-safe laser radiation. KIGRE QE-7S rod placed in resonator cavity was used as active element.     

Effect of pulses from a high-power ytterbium fiber laser on a material with a nonuniform refractive index. I. Irradiation of yttrium oxide targets

The irradiation of Nd:Y₂O₃ targets with an absorption coefficient of 13–1.7 × 10³ cm^?1 using laser pulses with a duration of 0.1–3.5 ms and peak power of 200–700 W at a power density of (0.2–1.3) × 10⁶ W/cm² is studied. A relatively large spread of the delay times of laser plume, spike emission of the laser plume, cleavage of the front surface of the target, and greater ejection of substance from the crater in comparison with the effect of the CO₂-laser radiation with almost the same power are demonstrated. A numerical model of the effect of radiation on a target with a nonuniform refractive index is proposed to interpret the destruction of dielectric material (cleavage of the front surface) and the large spread of the delay times of the plume.     

Modification of Cd1−xMnxTe crystal surface layers by nanopulsed laser irradiation

The surface modification of Cd_1−xMn_xTe (x = 0-0.3) crystal wafers under pulsed laser irradiation has been studied. The samples were irradiated by a Q-switched ruby laser with pulse duration of 80 ns. Optical diagnostics of laser-induced thermal processes were carried out by means of time-resolved reflectivity measurements at wavelengths 0.53 and 1.06 μm. Laser irradiation energy density, E varied in the range of 0.1-0.6 J/cm². Morphology of irradiated surface was studied using scanning electron microscopy. The energy density whereby the sample surface starts to melt, depends on Mn content and is equal to 0.12-0.14 J/cm² for x ≤ 0.2, in the case of x = 0.3 this value is about 0.35 J/cm². The higher Mn content leads to higher melt duration. The morphology of laser irradiated surface changes from a weakly modified surface to a single crystal strained one, with an increase in E. Under irradiation with E in the range of 0.21-0.25 J/cm², the oriented filamentary crystallization is observed. The Te inclusions on the surface are revealed after the irradiation of samples with small content of Mn.     

Segregation during crystal growth from melt and absorption cross section determination by optical absorption method

Segregation during crystal growth from melt under two conditions is studied by using crystal mass, which can be measured easily, as an independent variable, and a method to determine the effective segregation coefficient and absorption cross section of optical dopant is given. When the segregated solute disperses into the whole or just a part of melt homogenously, the concentration C _s in solid interface will change by different formulas. If the crystal growth interface is conical and segregated solute disperses into melt in total or part, the solute concentration at r = 2/3R, where r is the distance from the growth cross section center and R the crystal radius, is independent on the shape of the crystal growth interface, and its variation at r = 2/3R can be regarded as the result from crystal growth in flat interface. With C _s variation formula in solid and absorption cross section σ for optical dopant, the absorption coefficients along the crystal growth direction can be calculated, and the corresponding experimental value can be obtained through the crystal optical absorption spectra. By minimizing the half sum, whose independent variables are k, ΔW or σ, of the difference square between the calculated and experimental absorption coefficients from one or more absorption peaks along the crystal growth direction, k and σ, or k and ΔW, can be determined at the same time through the Levenberg-Marquardt iteration method. Finally, the effective segregation coefficient k, ΔW and absorption cross sections of Nd:GGG were determined, the results fitted by two formula gave more closed effective segregation coefficient, and the value ΔW also indicates that the segregated dopant had nearly dispersed into the whole melt. Experimental results show that the method to determine effective segregation coefficient k, ΔW and absorption cross sections σ is convenient and reliable, and the two segregation formulas can describe the segregation during the crystal growth from melt relatively commendably. Supported by the National Natural Science Foundation of China (Grant No. 50772112)     

Ablation process of silica glass induced by laser plasma soft X-ray irradiation

Silica glass can be machined by irradiation with laser plasma soft X-rays on nano- and micrometer scale. We have investigated the ablation process of silica glass induced by laser plasma soft X-ray irradiation. We observed ionic and neutral species emitted from silica surfaces after irradiation. Dominant ions and neutrals are O⁺ and Si⁺ ions and Si, O, SiO and Si₂ neutrals, respectively. The ions have kinetic energies of 13 and 25 eV, which are much higher than those of particles emitted by evaporation. The energy of laser plasma soft X-rays absorbed to silica glass at a fluence of 1.4 J/cm² is estimated to be 380 kJ/cm³, which is higher than the binding energy of SiO₂ of 76 kJ/cm³. These results suggest that the most of the bonds in silica glass are broken by absorption of laser plasma soft X-rays, that several percent of the atoms are ionized, and that neutral atoms are emitted together with repulsive ions. The process possibly enables us to fabricate nano structures.     

Spectral holeburning and the Stark and Zeeman effects in SrF2:Sm2+

We have observed narrow (40 MHz) persistent spectral holeburning in SrF₂:Sm²⁺ for Sm²⁺ ions in perturbed cubic sites. The transition studied is ⁷F₀?⁵D₀ between the f-electron states. Stark effect measurements show a linear splitting with a coefficient of 0.006 MHz/V cm^-1 and the splitting pattern shows that the site has C_4V symmetry. The C_4V perturbation is very weak and leads to unresolved splittings of cubic T_1g levels of ～2 cm^-1. The nonlinear Zeeman effect was studied using holeburning and the coefficient of 1.04 Hz/G² shows that the predominant magnetic coupling is in the ground state as found recently for CaF₂:Sm²⁺.     

Affinement d'une raie de fluorescence de Pr3+: LaAlO3 par excitation laser

A cw dye laser has been used for fluorescence line narrowing experiments by resonant excitation on Pr³⁺ ions in LaAlO₃. Scanning the excitation radiation through the absorption line width corresponding to the transition ³H₄ (0 cm^-1) → ¹D₂ (16 694 cm^-1) while fluorescence was observed, has put into evidence a deformation of the symmetry around Pr³⁺ ions, different for every site.This experiment shows the power of cw dye laser spectroscopy for investigating optical spectra in crystals.     

Characterization of a LiCoO2 thin film cathode grown by pulsed laser deposition

A highly (003)-oriented pure LiCoO₂ thin film cathode, without Co₃O₄ impurities, was grown on a stainless steel substrate by pulsed laser deposition and characterized by electrochemical testing, scanning electron microscopy (SEM), ex situ X-ray diffraction (XRD), Raman and X-ray photoelectron spectroscopy (XPS). The initial reversible discharge capacity of the LiCoO₂ thin film cathode reached 52.5?μAh/cm²µm and capacity loss was about 0.18% per cycle at a current density of 12.74?μA/cm². The chemical diffusion coefficient of the Li⁺ ion was estimated to be about 4.7?×?10^?11?cm²/s from cyclic voltammetric (CV) scans. Ex situ XRD revealed that the spacing of crystalline planes expanded about 0.09?Å when charged to 4.2?V, corresponding to Li_0.5CoO₂, lower than the value for composite powder LiCoO₂ electrodes. XPS results showed that the number of low-coordinated oxygen ions increased relative to the removal of Li⁺ ions.     

A comparative study of the energy migration and energy transfer in highly doped Nd:YAG single crystal

The donor-donor (D-D) energy migration interaction parameter C_DD in high-concentration Nd³⁺-doped YAG laser crystal is estimated, for the first time, by using the Yokota-Tanimoto (Y-T) model and the spectral overlap model (SOM) of Kushida. Firstly, the experimental luminescence decay curves of ⁴F_3/2 state of Nd³⁺ ions in YAG laser crystal at room temperature for 2.0 and 3.0 at% Nd³⁺ concentrations reported by Mao are fitted successfully by using the Y-T model and the parameter C_DD is obtained to be 1.50×10⁻³⁹ cm⁶/s. Secondly, the parameter C_DD is also directly calculated by using the SOM of Kushida: C_DD is calculated to be 2.73×10⁻³⁹ cm⁶/s. By comparing the energy migration interaction parameter C_DD and the donor-acceptor (D-A) energy transfer interaction parameter C_DA (1.794×10⁻⁴⁰ cm⁶/s), it is concluded that energy migration rate between Nd³⁺ ions in YAG laser crystal was about 11 times larger than energy transfer rate, and that energy migration would play a very important role in high-concentration Nd³⁺ -doped YAG laser crystal.     

Ion aging effects on the dissociative-attachment instability in CO2 lasers

Onset of the dissociative-attachment instability requires that the rate coefficient for electron detachment (k _d) from negative ions be below a critical value. The predominant negative and positive ions in a CO₂N₂He gas-discharge plasma are known to change with time. As secondary by-products form and the predominant negative-ion species changes from CO ₃ ^– to NO ₂ ^– , a decrease ink _d occurs destabilizing the discharge. Since NO ₂ ^– and NO ₃ ^– are largely unreactive with respect to associative detachment,k _d depends in a sensitive fashion on the concentration of certain minority negative ions (O^–, O ₂ ^– ) and neutrals (CO, O, N). The sufficient conditions for the dissociative-attachment instability are much less sensitive to changes in the electron-ion and ion-ion recombination rate coefficients resulting from the ion aging process.     

Solubility limit of impurities in silicon after laser induced melting

The solubility of several dopants (Sb, Ga, Bi, In) in laser treated silicon has been investigated. The dopants were introduced by vacuum deposition followed by ruby laser irradiation. Their solubility was determined by Rutherford backscattering spectroscopy measurements in channelling and random conditions. In all cases, a maximum solubilityC _S ^* , much higher than the equilibrium solubility limitC _S ⁰ and independent of the pulsed laser energy density, was found. The values obtained are in good agreement with those calculated from a simple model based on phase diagram considerations, using the relationship: $$C_S^* = \frac{{C_S^0 }}{{k_0 }}k^* ,$$ wherek ₀ andk ^* are the equilibrium and effective distribution coefficients. Finally, the existence of a new solubility limit for a laser treatment is discussed.     

Recombination measurements at low energies with Au49+,50+,51+ at the TSR

Recombination of Au⁴⁹⁺, Au⁵⁰⁺, and Au⁵¹⁺ ions has been studied at the TSR. With Au⁵⁰⁺ ions a storage lifetime of only 2 to 4 s was observed with the magnetically expanded electron beam of the cooler at a density of n_e = 10⁷ cm^-3. This short storage time is a consequence of the highest recombination rate coefficient ever observed with an atomic ion (1.8·10^-6 cm³ s^-1 at zero relative energy E_rel = 0 between electrons and ions). At about 30 meV a huge dielectronic recombination resonance is found with a record small width of only about 15 meV. Such resonances fortuitously occurring near E_rel=0 are probably the main reason for the enhanced recombination rates observed with Au⁵⁰⁺, with Pb⁵³⁺ (in a recent experiment at LEAR) as well as with other complex ions. For Au⁴⁹⁺ and Au⁵¹⁺ the recombination rates are smaller by an order of magnitude. This revised version was published online in August 2006 with corrections to the Cover Date.