An AES and ESCA study of GCr15 steel coated with Ti,Cr and bombarded by N+ and Ar+

GCr15 steel specimens coated with Ti, Cr and bombarded with N⁺, Ar⁺ were analyzed by AES and ESCA (PHI-550). The results show that (1) the specimens bombarded with N⁺ have improved surface mechanical properties compared to those bombarded with Ar⁺; (2) the changes in the surface properties are related to the composition of the surface layer, mainly to TiO₂, TiN, Cr₂O₃, and other compounds. Also, the presence of carbon is found to be advantageous in modifying GCr15 bearing steel.     

退火温度对N+注入ZnO:Mn薄膜结构及室温铁磁性的影响

采用射频磁控溅射法在石英玻璃衬底上制备了ZnO:Mn薄膜, 结合N⁺ 注入获得Mn-N共掺ZnO薄膜, 进而研究了退火温度对其结构及室温铁磁性的影响. 结果表明, 退火后ZnO:(Mn, N) 薄膜中Mn²⁺和N^3-均处于ZnO晶格位, 没有杂质相生成. 退火温度的升高 有助于修复N⁺注入引起的晶格损伤, 同时也会让N逸出薄膜, 导致受主(N_O)浓度降低. 室温铁磁性存在于ZnO:(Mn, N)薄膜中, 其强弱受N_O浓度的影响, 铁磁性起源可采用束缚磁极化子模型进行解释.     

Two-step nitridation of photocatalytic TiO2 films by low energy ion irradiation

Nitridation of TiO₂ films is performed by the simultaneous irradiation of low-energy N₂⁺ and H₂⁺ ions under substrate-heating condition. Spectroscopic observations of the resultant films clarify the formation of nitrogen-substituted TiO₂ (TiO_2−xN_x) with large N fractions and the agglomeration of undesirable oxynitride species attributed to the deep states in the band gap. We find that the addition of a thin TiO₂ cap layer on the ion-irradiated films improves the nitrogen bonding structure and distribution near the surfaces, leading to a good photocatalytic performance even in the visible region.     

N2微空心阴极放电特性及其阴极溅射的PIC/MC模拟

采用两维PIC/MCC模型模拟了氮气微空心阴极放电以及轰击离子 (N₂⁺,N⁺) 的钛阴极溅射. 主要计算了氮气微空心阴极放电离子 (N₂⁺,N⁺) 及溅射原子Ti的行为分布, 并研究了溅射Ti 原子的热化过程. 结果表明: 在模拟条件下, 空心阴极效应是负辉区叠加的电子震荡; 在对应条件下, 微空心较传统空心放电两种离子 (N₂⁺,N⁺) 密度均大两个量级, 两种离子的平均能量的分布及大小几乎相同; 在放电空间N⁺的密度约为N₂⁺的1/6, 最大能量约大2倍; 在不同参数 (P, T, V)下, 轰击阴极内表面的氮离子(N₂⁺,N⁺)的密度近似均匀, 其平均能量几乎相等; 从阴极溅射出的Ti原子的初始平均能量约6.8 eV, 离开阴极约0.15 mm处几乎完全被热化. 模拟结果为N₂微空心阴极放电等离子体特性的认识提供了参考依据. 关键词： 微空心阴极放电 PIC/MC模拟 2等离子体')" href="#">N₂等离子体     

Atomic excitations in sputtering studied with the use of composite targets

Atomic excitation phenomena in sputtering have been studied with the following combinations of projectile and target. (i) Be, B, Mg, Al, and Si bombarded with 80 keV Ar⁺ at UHV as well as with the target chamber backfilled with oxygen. (ii) Mg bombarded with 80 keV O⁺, F⁺, Ne⁺, Na⁺ Cl⁺, and Ar⁺. (iii) MgO, MgF₂, MgCl₂, MgSO₄, and several alkali halides bombarded with 80 keV Ar⁺ at UHV. Results are discussed. It is concluded that the excited-state formation takes place as electron tunneling at a fairly large separation between the target surface and the particle being sputtered. It is suggested with composite targets containing a metal element that excitation takes place predominantly at locations of the target surface where the work function is low, due to a thin, metallic surface layer, and that production of ground-state, positive secondary ions mainly takes place at target surface regions with high work function. For semiconductors, the changes caused by presence of oxygen are related to the change of the bonds in the solid from being of covalent nature to being fractionally ionic.     

Studies of the bombarded surface of solids by methods of secondary ion-electron emission

Energy distributions of secondary electrons emitted from the (100) surface of a copper single crystal bombarded with 3 keV N₂⁺ and Ar⁺ ions were obtained by the method of electric differentiation and the homodyne technique. In the high-energy part of the spectrum there is a peak whose position in the energy scale depends on the type of bombarding ions (25 eV for Ar⁺ and 45 eV for N₂⁺). The high-energy electrons are the outcome of autoionization of adsorbed and implanted bombarding ions. It is shown that the high-energy peak may be a good indication of the state of saturation of the surface with bombarding ions.     

Comparison and semiconductor properties of nitrogen doped carbon thin films grown by different techniques

Amorphous carbon nitride (a-CN_x) thin films have been synthesised by three different deposition techniques in an Ar/N₂ gas mixture and have been deposited by varying the percentage of nitrogen gas in the mixture (i.e. the N₂/Ar + N₂ ratio) from 0 to 10%. The variation of the electrical conductivity and the gap values of the deposited films versus the N₂/Ar + N₂ ratio were investigated in relation with their local microstructure. Film composition was analysed using Raman spectroscopy and optical transmission experiments. The observed variation of electrical conductivity and optical properties are attributed to the changes in the atomic bonding structures, which were induced by N incorporation, increasing both the sp² carbon content and their relative disorder. The low N content samples seem to be an interesting material to produce films with interesting properties for optoelectronic applications considering the facility to control the gas composition as a key parameter.     

Moisture sensor devices composed of thin films plasma-polymerized from amino-groups-containing silanes

Quaternization of thin films plasma-polymerized from trimethylsilyldimethylamine, bis(dimethylamino)methylsilane, bis(dimethylamino)methylvinylsilane with methylbromide was investigated by elemental analysis, infrared spectroscopy, and ESCA. The modification of amino and amineoxide groups in these plasma polymers was accomplished to yield quaternary nitrogen residues of N⁺ (CH₃)HBr^?, N⁺ (CH₃)₂Br^?, and N⁺ (OCH₃)Br^? groups. These quaternized plasma-films are sensitive to moisture, and their electrical resistance decreases exponentially with increasing the relative humidity from 20 to 90% by four orders. The hysteresis in the electrical resistance in cyclically changing the relative humidity is not so large, the response time being within 20 s.     

Band gap tunable and improved microstructure characteristics of Cu2ZnSn(S1−x,Sex)4 thin films by annealing under atmosphere containing S and Se

Cu₂ZnSn(S_xS_1?x)₄ (CZTSSe) thin films were prepared by annealing a stacked precursor prepared on Mo coated glass substrates by the sputtering technique. The stacked precursor thin films were prepared from Cu, SnS₂, and ZnS targets at room temperature with stacking orders of Cu/SnS₂/ZnS. The stacked precursor thin films were annealed using a tubular two zone furnace system under a mixed N₂ (95%) + H₂S (5%) + Se vaporization atmosphere at 580 °C for 2 h. The effects of different Se vaporization temperature from 250 °C to 500 °C on the structural, morphological, chemical, and optical properties of the CZTSSe thin films were investigated. X-ray diffraction patterns, Raman spectroscopy, and X-ray photoelectron spectroscopy results showed that the annealed thin films had a single kesterite crystal structure without a secondary phase. The 2θ angle position for the peaks from the (112) plane in the annealed thin films decreased with increasing Se vaporization temperature. Energy dispersive X-ray results showed that the presence of Se in annealed thin films increased from 0 at% to 42.7 at% with increasing Se vaporization temperatures. UV–VIS spectroscopy results showed that the absorption coefficient of all the annealed thin films was over 10⁴ cm^?1 and that the optical band gap energy decreased from 1.5 eV to 1.05 eV with increasing Se vaporization temperature.     

SiCN thin film prepared at room temperature by r.f. reactive sputtering

Silicon–carbon nitride (SiCN) thin films were deposited on Si substrate at room temperature by r.f. reactive sputtering. Fourier transform infrared spectroscopy (FTIR), optical absorption spectra (α(λ)) and electrical conductivity (σ) were studied for the thin films. The effect of the annealing on IR and σ was investigated at different temperatures. IR analysis indicates that Si–H, C–N, Si–C, Si–N, C–N and CN bonds are present in a-SiCN:H films. A shift of the stretching mode for Si–H bond to the high-wavenumber side is observed with increasing the nitrogen flow ratio γ_N2(=N₂/(Ar+H₂+N₂+CH₄)). The shift is from 2000 to 2190 cm⁻¹ when γ_N2=13.7%. The study shows that the film structure and optical and electrical properties are obviously modified readily by controlling the process parameters of deposition. The improvement in the film properties, e.g., good thermal stability, is explained mainly in terms of the cross-linked structure between the Si, C and N atoms.     

离子束增强沉积制备p型氧化锌薄膜及其机理研究

采用离子束增强沉积方法在Si和SiO₂/Si衬底上制备In-N共掺杂ZnO薄膜(INZO)，溅射靶是用ZnO和2 atm% In₂O₃粉体均匀混合并压制而成，在氩离子溅射ZnO靶的同时，氮、氩混合离子束垂直注入沉积的薄膜.实验结果显示INZO薄膜具有(002)的择优取向，并且为p型导电，电阻率最低为0.9Ωcm.薄膜在氮气、氧气气氛下退火，对薄膜的结构和电学特性与成膜和退火条件的关系进行了分析. 关键词： 氧化锌薄膜 p型掺杂 离子束增强沉积     

Synthesis of amorphous boron carbide by single and multiple charged boron ions bombardment of fullerene thin films

In this paper, results of structural modification of fullerene thin films by single and multiple charged boron ions (B⁺, B³⁺) are presented. The applied ion energies were in the range of 15-45 keV. The characterization of as-deposited and irradiated specimens has been performed by atomic force microscopy, Raman and Fourier transform infrared spectroscopy and UV/vis spectrophotometry. The results of Raman analysis have shown the formation of amorphous layer after irradiation of fullerene thin films. Fourier transform infrared spectroscopy has confirmed the formation of new B-C bonds in irradiated films at higher fluences (2 × 10¹⁶ cm⁻²). The morphology of bombarded films has been changed significantly. The optical band gap was found to be reduced from 1.7 to 1.06 eV for irradiated films by B³⁺ ions and 0.7 eV for irradiated films by B⁺ ions.     

AES analysis of nitridation of Si(100) by 2–10 keV N+2 ion beams

Ion beam nitridation of Si(100) as a function of N⁺₂ ion energy in the range of 2–10 keV has been investigated by in-situ Auger electron spectroscopy (AES) analysis and Ar⁺ depth profiling. The AES measurements show that the nitride films formed by 4–10 keV N⁺₂ ion bombardment are relatively uniform and have a composition of near stoichiometric silicon nitride (Si₃N₄), but that formed by 2 keV N⁺₂ ion bombardment is N-rich on the film surface. Formation of the surface N-rich film by 2 keV N⁺₂ ion bombardment can be attributed to radiation-enhanced diffusion of interstitial N atoms and a lower self-sputtering yield. AES depth profile measurements indicate that the thicknesses of nitride films appear to increase with ion energy in the range from 2 to 10 keV and the rate of increase of film thickness is most rapid in the 4–10 keV range. The nitridation reaction process which differs from that of low-energy (< 1 keV) N⁺₂ ion bombardment is explained in terms of ion implantation, physical sputtering, chemical reaction and radiation-enhanced diffusion of interstitial N atoms.     

Carbon nitride films by RF plasma assisted PLD: Spectroscopic and electronic analysis

Carbon nitride (CNx) thin films have been grown on Si 〈1 0 0〉 by 193 nm ArF ns pulsed laser ablation of a pure graphite target in a low pressure atmosphere of a RF generated N₂ plasma and compared with samples grown by PLD in pure nitrogen atmosphere. Composition, structure and bonding of the deposited materials have been evaluated by X-ray photoelectron spectroscopy (XPS), and Raman scattering. Significant chemical and micro-structural changes have been registered, associated to different nitrogen incorporation in the two types of films analyzed. The intensity of the reactive activated species is, indeed, increased by the presence of the bias confined RF plasma, as compared to the bare nitrogen atmosphere, thus resulting in a different nitrogen uptake in the growing films. The process has been also investigated by some preliminary optical emission studies of the carbon plume expanding in the nitrogen atmosphere. Optical emission spectroscopy reveals the presence of many excited species like C⁺ ions, C atoms, C₂, N₂; and CN radicals, and N₂⁺ molecular ions, whose relative intensity appears to be increased in the presence of the RF plasma. The films were also characterised for electrical properties by the “four-probe-test method” determining sheet resistivity and correlating surface conductivity with chemical composition.     

An electrochromic device (ECD) cell characterization on electron beam evaporated MoO3 films by intercalating/deintercalating the H+ ions

Thin films of molybdenum oxide (MoO₃) is one of the most interesting layered intercalation materials because of its excellent application in solid state batteries, large-area window and display systems. In recent years there has been considerable interest in variable transmittance electrochromic devices (ECD) based on Li⁺, H⁺ and K⁺ intercalation in transition metal oxide (MoO₃) thin films. In the present investigation, thin films of MoO₃ were prepared by electron beam evaporation technique on microscopic glass and fluorine doped tin oxide (FTO) coated glass substrates for the application in electrochromic device cells. The compositional stoichiometry of the films was studied by X-ray photoelectron spectroscopy (XPS). The electrochromic nature of the films has been analyzed by inserting H⁺ ions from the H₂SO₄ electrolyte solution using the cyclic-voltammetry (CV) technique. We studied the electrochromic device cells (ECD) incorporating an evaporated MoO₃ thin films as electrochromic layers. The devices exhibit good optical properties with low transmittance values in the colored state, which make them suitable for large-area window applications. The maximum coloration efficiency of the cell was observed at about 70 cm²/C.     

The structural and electric behavior of SrBi2Ta2O9 ferroelectric thin films with H+ implantation

The structural and electrical characteristics of H⁺-implanted SrBi₂Ta₂O₉ (SBT) ferroelectric thin films were investigated by X-ray diffraction analysis and electrical measurements. 25 keV H⁺ with doses ranging from 1 × 10¹⁴/cm² to 3 × 10¹⁵/cm² were implanted into the Sol-Gel prepared SBT ferroelectric thin films. The X-ray diffraction patterns of SBT films show that no difference appears in the crystalline structure of H⁺-implanted SBT films compared with unimplanted films. Ferroelectric properties measurements indicate that both remnant polarization and the coercive electric field of H⁺-implanted SBT films decrease with increasing the implantation dose. The disappearance of ferroelectricity was found in the H⁺-implanted SBT films up to a dose of 3 × 10¹⁵/cm². The leakage current-voltage (I-V) and capacitance-voltage (C-V) characteristics of the H⁺-implanted SBT films were also discussed before and after a recovery process.     

稀掺杂GaNxAs1－x(x≤0.03)薄膜的调制光谱研究

利用室温下压电调制反射光(PzR)谱技术系统测量了N掺杂浓度为0.0%—3%的分子束外延生长GaN_xAs_1-x薄膜，并对图谱中所观察的光学跃迁进行了指认.在GaN_0.005As_0.995和GaN_0.01As_0.99薄膜的PzR谱中观察到此前只在椭圆偏振谱中才看到的N掺杂相关能态E₁+Δ₁+Δ_N.当N掺杂浓度达到 关键词： 压电调制反射光谱(PzR) xAs_1-x薄膜')" href="#">GaN_xAs_1-x薄膜 分子束外延(MBE)     

N离子注入富氧ZnO薄膜的p型导电及拉曼特性研究

采用射频磁控溅射法在富氧环境下制备ZnO薄膜, 继而结合N离子注入及热退火实现薄膜的N掺杂及p 型转变, 借助霍尔测试和拉曼光谱研究了N离子注入富氧ZnO薄膜的p型导电及拉曼特性. 结果表明, 在 600 ℃温度下退火120 min可获得性能较优的p-ZnO: N薄膜, 其空穴浓度约为2.527×10¹⁷ cm^-3. N离子注入ZnO引入了三个附加拉曼振动模, 分别位于274.2, 506.7和640.4 cm^-1. 结合电学及拉曼光谱的分析发现, 退火过程中施主缺陷与N受主之间的相互作用对p-ZnO的形成产生重要影响.     

Effect of H irradiation on the optical properties of vacuum evaporated AgInSe2 thin films

We prepared polycrystalline AgInSe₂ thin films by vacuum evaporation on glass substrate at a high temperature using the stoichiometric powder. The thin films were characterized by X-ray diffraction and UV-vis-NIR spectroscopy. The samples were subjected to the irradiation of 1.26 MeV protons (H⁺). The effect of irradiation on the optical properties has been investigated for different doses of H⁺. It is observed that the band gap of silver indium selenide thin films decreases gradually with ion irradiation dose.     

Dissociation of fast molecular ions under interaction with a material: Separation of atomic fragments

Computer simulation of the dissociation (Coulomb explosion) of fast molecular ions penetrating through thin films is performed on the basis of coupled differential equations. The charge-state distributions and angular deflections of the atomic fragments of a molecular nitrogen (N₂⁺) ion have been computed in the case of penetration through an amorphous carbon film. The computational results are compared with the experimental data.