Effect of conduction band nonprabolicity on the Rashba spin splitting of AlGaN/GaN QWs

By using the perturbation expansion method and self-consistent iterative method, we evaluate the effect of the conduction band nonprabolicity on the wave vector (k_t) dependent Rashba coefficient (α) and nonlinear Rashba spin splitting (ΔE) in the Al_0.5Ga_0.5N/GaN quantum well (QW). The effective mass (energy) under the first order approximation m_t1 (E_k1) is in proximity to the iterative result m_tp (E_kp) and m_t1>m_tp, E_k1<E_kp, showing the higher order contributions to m_t (E_k) are small. The sign of the nonparabolic correction to E_k is just opposite to that of the correction to m_t. The increase of α and ΔE due to the conduction band nonparabolicity reaches about 3% at k_t=1 nm⁻¹. Around the left heterointerface, the probability density is high and E_k0>E_kp>E_k1, so α₀<α_p<α₁, ΔE₀<ΔE_p<ΔE₁. With increasing k_t, α decreases, and ΔE increases slowly. For small k_t, α₀ (ΔE₀), α₁ (ΔE₁) and α_p (ΔE_p) are nearly the same. While for large k_t, the difference between α₀ and α₁ (α_p) increases rapidly, but the difference between ΔE₀ and ΔE₁ (ΔE_p) increases slowly.     

Strain effect on the visible emission in PbTiO3 nanotubes: Template and wall-thickness dependence

We investigated the strain effect on temperature-dependent photoluminescence property in the clamped (with template) and free-standing (without template) PbTiO₃ (PTO) nanotubes. The wall-thickness of nanotubes was varied from 25 to 80 nm with the outer diameter fixed to 420 nm. While all nanotubes show sizable green/yellow emission, the temperature dependent shift of the emission energy is significantly suppressed in the clamped PTO nanotubes, which is attributed to the lattice strain driven by the template clamping. This clamping effect is more significant for thinner nanotubes. Even in the free-standing PTO nanotubes the temperature-dependence of emission is affected by the wall-thickness. Our finding is the clear manifestation of the template and geometrical shape effect on the optical property of the nanotubes.     

Pressure-dependence of resistivity in organic semiconductors

Abstract

The electrical resistivities of seven organic semiconductors and two nickel organometallics were found to have pressure dependencies which can be expressed as very simple analytic forms. These dependencies suggest that simple theoretical models for the resistivity should be possible.     

Near infrared emission spectra of CoH and CoD

New high resolution emission spectra of CoH and CoD molecules have been recorded in the 640 nm to 3.5 μm region using a Fourier transform spectrometer. The bands were excited in a carbon tube furnace by the reaction of cobalt metal vapor and a mixture of H₂ or D₂ with He at a temperature of about 2600 °C. Eight bands were observed for the A′³Φ₄-X³Φ₄ electronic transition of CoD, and five bands for the corresponding transition of CoH. The (0, 0) bands of the A′³Φ₃-X³Φ₃ system were also recorded for both isotopologues, although one of the parity components in the X³Φ₃ sub-state of CoH was found to be perturbed. The A′³Φ₃-X³Φ₄ transition was also observed in our spectrum of CoH. In addition, a new [13.3]4 electronic state was found by observing [13.3]4-X³Φ₃ and [13.3]4-X³Φ₄ transitions in the spectrum of CoD. Analysis of the transitions with ΔΩ = 0, ± 1 provided more accurate values of spin-orbit splittings between Ω = 4 and Ω = 3 components. The ground-state data for both molecules were fitted both to band-constant and Dunham-expansion expressions, and a combined-isotopologue analysis of the X³Φ₄ spin component was carried out using the data for CoH and CoD. The upper states were represented by term values in these analyses because of perturbations, but estimated band constants for them were obtained in separate fits in which ground-state constants were held fixed.     

CO2-broadened water in the pure rotation and ν2 fundamental regions

The CO₂-broadened water coefficients (half-widths, line shifts, and temperature dependence of the widths) are predicted using a fully complex Robert-Bonamy formulation for the 937 allowed and forbidden perpendicular type transitions of (000)-(000) between 200 and 900 cm⁻¹ in order to facilitate atmospheric remote sensing of Mars and Venus. In addition, empirical Lorentz line widths and pressure-induced frequency-shifts of CO₂-broadened H₂¹⁶O are obtained at room temperature for 257 perpendicular transitions of the (010)-(000) fundamental. For this, calibrated spectra recorded at 0.0054 cm⁻¹ resolution are measured assuming Voigt line shapes. For transitions between 1287 and 1988 cm⁻¹ with rotational quanta up to J = 13 and K_a = 6, the widths vary from 0.045 to 0.212 cm⁻¹ atm⁻¹ at 300 K; the pressure-shifts are quite large and range from −0.0386 to +0.0436 cm⁻¹ atm⁻¹. For the (010)-(000) band, the RMS and mean observed and calculated differences for CO₂-broadened H₂O half-widths are 12% and −1.9%, respectively, while the RMS and mean ratios of the observed and calculated pressure-induced shift coefficients are 1.6 and 0.79, respectively. For pairs of transitions involving K_a = 0 and 1, such as 2_0 2 ← 3_1 3 and 3_1 3 ← 2_0 2, both the calculated and observed pressure induced shifts in positions are opposite in sign and often similar in magnitude. The data are too limited to characterize vibrational dependencies of the widths, however.     

Microfabrication techniques used in Japan for VLSI and other devices

Lead films of thickness 100 Å, 250 Å. and 350 Å were vacuum deposited on AI and laser treated in air using single pulses (7 ns FWHM) from a Nd: glass laser operating in TEM₀₀ mode, at peak energy densities of 1.5-5.0 J/cm². Rutherford back-scattering of 1.8 MeV He⁺ ions was employed to determine the depth profiles of Pb in Al. Up to about 1.4 J/cm², we observe only evaporation loss of Pb and formation of Pb-rich cells on the surface. At higher energies, liquid phase diffusion of Pb is observed up to 4 J/cm², beyond which convection effects are seen. A quantitative analysis of data for 350 Å film at 3.0 J/cm² shows evidence of nonequilibrium segregation effects.     

Temperature dependence of photonic crystals based on thermoresponsive magnetic fluids

The influence mechanisms of temperature on the band gap properties of the magnetic fluids based photonic crystals are elaborated. A method has been developed to obtain the temperature-dependent structure information (A_sol/A) from the existing experimental data and then two critical parameters, i.e. the structure ratio (d/a) and the refractive index contrast (Δn) of the magnetic fluids photonic crystals are deduced for band diagram calculations. The temperature-dependent band gaps are gained for z-even and z-odd modes. Band diagram calculations display that the mid frequencies and positions of the existing forbidden bands are not very sensitive to the temperature, while the number of the forbidden bands at certain strengths of magnetic field may change with the temperature variation. The results presented in this work give a guideline for designing the potential photonic devices based on the temperature characteristics of the magnetic fluids based photonic crystals and are helpful for improving their quality.     

Chiral splitting and polarization-dependent optical absorption of exciton for Rashba spin-orbit interaction

We study theoretically the effect of Rashba spin-orbit interaction (RSOI) on the chiral splitting of quasi-two-dimensional quantum well (QW) exciton. By a nonvariational method, entire energy spectrum is treated simultaneously, it does not require a great deal of insight to choose a good variational function. We show that, the coexistence of electron and hole RSOI introduces a four-energy system for both heavy-hole and light-hole exciton, the competition between them leads to an anticrossing exciton energy spectrum. We also show that the chiral splitting of energy spectrum leads to a polarization-dependent optical absorption. The results suggest a way for direct optical measurements of RSOI parameters.     

Temperature dependence of the yield stress of metallic nano-sized crystals

It is shown that the temperature effect on the variance of local shear stresses is the main factor pre-determining the temperature law of the yield stress of nano-sized crystals. The results of molecular dynamics simulations of uniaxial tension of Mo, α-Fe and W nanowires in three crystallographic directions ([100], [110] and [111]) over the temperature range 100–1000 K are presented. It is found that within this temperature range, the yield stress of nano-sized crystals varies not exponentially, as for bulk single crystals, but is a parabolic function of temperature.     

Temperature dependence of the optical band gap and electrical conductivity of sol-gel derived undoped and Li-doped ZnO films

Undoped and lithium (Li)-doped ZnO films were prepared by sol-gel method using spin coating technique. The effects of Li content on the crystallinity and morphological properties of ZnO films were assessed by X-ray diffraction (XRD), field emission scanning electron microscopy (FESEM) and atomic force microscopy (AFM). XRD patterns of the films showed the hexagonal wurtzite type polycrystalline structure and that the incorporation of lithium leads to substantial changes in the structural characteristics of ZnO films. The SEM and AFM measurements showed that the surface morphology of the films was affected from the lithium incorporation. The wrinkle network was observed on the surface from both SEM and AFM results for undoped ZnO. The wrinkle structure disappeared with increasing Li content. The absorption spectra of the ZnO and 5% Li-doped ZnO (LZO5) films were carried out between 140 and 400 K temperatures. The optical band gap of ZnO and LZO5 films (calculated at various temperatures) showed a linear dependence on the temperature. The absolute zero value optical band gap and the rate of change of the band gap with temperature of the ZnO and LZO5 films were found to be 3.339 and 3.322 eV, and 2.95 × 10⁻⁴ and 1.60 × 10⁻⁴ eV/K, respectively. The transport mechanisms in the ZnO and LZO5 films have been investigated by analyzing of the temperature (80-300 K) dependence of the conductivity. The activation energies of the ZnO film increased with Li content.     

Annihilation diagram contribution to charmonium masses

In this work, we generate gauge configurations with \begin{document}$ N_f = 2 $\end{document} dynamical charm quarks on anisotropic lattices. The mass shift of \begin{document}$ 1S $\end{document} and \begin{document}$ 1P $\end{document} charmonia due to the charm quark annihilation effect can be investigated directly in a manner of unitary theory. The distillation method is adopted to treat the charm quark annihilation diagrams at a very precise level. For \begin{document}$ 1S $\end{document} charmonia, the charm quark annihilation effect barely changes the \begin{document}$ J/\psi $\end{document} mass, but lifts the \begin{document}$ \eta_c $\end{document} mass by approximately 3–4 MeV. For \begin{document}$ 1P $\end{document} charmonia, this effect results in positive mass shifts of approximately 1 MeV for \begin{document}$ \chi_{c1} $\end{document} and \begin{document}$ h_c $\end{document}, but decreases the \begin{document}$ \chi_{c2} $\end{document} mass by approximately 3 MeV. We did not obtain a reliable result for the mass shift of \begin{document}$ \chi_{c0} $\end{document}. In addition, we observed that the spin averaged mass of the spin-triplet \begin{document}$ 1P $\end{document} charmonia is in good agreement with \begin{document}$ h_c $\end{document}, as expected by the non-relativistic quark model and measured by experiments.     

光频支格波对晶格热容的贡献

讨论晶格的光频支格波对晶格热容的贡献，得到了这部分的热容的表达式。在低温极限情况下,光频支格波对晶格热容的贡献很小，可以忽略，只有频率较低的声频支格波对晶格热容有重要贡献；在高温情况下，复式 和中光频支格波对晶格热容有重要贡献，高温情况下的结果与杜隆－珀蒂定律给出的经典数值一致，该定律在高温时与实际实验符合得很好。     

紫膜（BR）水溶液共振Raman光谱的温度相关性

本文报道了ＢＲ水溶性Ｒａｍａｎ光谱的温度相关性及吸收光谱变化。讨论了导致光谱变化的热诱导引起的结构变化。     

Spin and spin-valley Hall effects in a honeycomb lattice with antiferromagnetism and spin-orbit couplings

We study linear response to a longitudinal electric field on an antiferromagnetic honeycomb lattice with intrinsic and Rashba spin-orbit couplings (SOCs). It is found that the spin-valley Hall effect could emerge alone or coexist with the spin Hall effect. The spin and spin-valley Hall conductivities exhibit some peculiarities that depend on the distinct topological states of the graphene lattice. Furthermore, the spin and spin-valley Hall conductivities could be remarkably modulated by changing the Fermi level. Our findings suggest that the antiferromagnetic honeycomb lattice with SOCs is an excellent platform for potential applications of spintronics and valleytronics.     

熔锥型光纤耦合器宽带特性研究

报道了在常规熔锥型单模光纤定向耦合器工艺基础上，以氢氟酸腐蚀法，将两光纤耦合区直径腐蚀成适当比例，用水平直接熔融拉锥系统，将耦合区域拉制成非对称臂组合波导，从而获得了具有宽频带特性、且尺寸较小的单模光纤定向耦合器，实验结果说明：通过控制耦合区长度，可以使耦合器耦合功率在某个特定波长附近、预定小于１００％分束比上具有相当平坦（宽带）特性；从而，通过控制组合波导的不同直径比，可望得到不同分束比宽带耦合     

四种材料超晶格的价带自旋劈裂的研究

自从Esaki和Tau[1]发现量子阱和超晶格以来,人们已对由两种材料构成的量子阱及超晶格的能带结构进行了大量的研究.陈维友等人[2]已研究了三种材料构成的超晶格的能带结构.本文将利用文献[2]报道的计算方法,对由四种材料构成的超晶格价带自旋劈裂的变化规律进行研究.     

Comparison of the Raman pressure shift and the Raman temperature shift of benzene and diamond with the ruby soale

Abstract

In order to serve as substitute for the pressure ruby scale at high temperature, the breathing mode of bemsens (990 cm^?1) and the first order Raman mode of diamond (1333 cm^?1) have been studied as a function of pressure and temperature in the range of 0–15 GPa and 25–400°C. The diamond and bensene Raman frequency shifts are shoft to be of valuable use as a pressure scale at high temperature. A further advantage of bensene is to remain a suitable pressure transmitting medium up to 350°C and 15 GP.     

Pressure-temperature phase diagram of the ferromagnetic Kondo lattice compound CeRuPO

The new example of a ferromagnetic Kondo lattice, CeRuPO, is a good candidate which offers the opportunity to investigate the physical properties near a ferromagnetic instability. Macroscopic experiments evidenced a Kondo temperature and Curie temperature of . We have investigated the pressure-temperature phase diagram of CeRuPO by means of electrical resistivity measurements on high quality single crystals in the temperature interval from 1.8 to 300 K. The pressure dependence of the ordering temperature follows the anticipated behavior of a Ce-based Kondo lattice system, where pressure is expected to suppress the magnetic order. The critical pressure for the suppression of the transition temperature to zero is estimated to be .     

The temperature dependent amide I band of crystalline acetanilide

The temperature dependent anomalous peak in the amide I band of crystalline acetanilide is thought to be due to self-trapped states. On the contrary, according to the present model, the anomalous peak comes from the fraction of ACN molecules strongly hydrogen-bonded to a neighboring ACN molecule, and its intensity decreases because, on average, this fraction decreases as temperature increases. This model provides, for the first time, an integrated and theoretically consistent view of the temperature dependence of the full amide I band and a qualitative explanation of some of the features of nonlinear pump–probe experiments.     

Elastic and ultrasonic properties of single crystalline nickel nanowires

In the present paper, we have theoretically calculated the non linear elastic constants of single crystalline Ni NWs at very broad temperature range 20–300 K validating simple interaction potential model. The temperature dependent ultrasonic attenuation and other related properties are determined using their second and third order elastic constants (SOECs/TOECs). Where possible, the results are compared with experiments from literature. There is a correlation between the thermal conductivity and ultrasonic attenuation in the temperature range 100–300 K. Also, a correlation between the resistivity and ultrasonic attenuation in the temperature range 40–100 K has been established validating the theoretical approach.