Impurity redistribution during laser irradiation in ion implanted silicon

(100) Silicon wafers implanted with 2 × 10^{15 31}P+/cm² at 100 keV have been annealed using a scanning beam of incoherent light. The main results obtained after annealing are: (a) the carrier concentration profile shows a complete dopant activation without diffusion of the implanted ions; (b) the values of carrier mobility are similar to those obtained by furnace annealing; (c) an improvement of minority carrier diffusion length is often observed; (d) a very good damage recovery is obtained. Transmission Electron Microscopy observations show that the residual damage is confined within a region at 0.2 μm depth and consists of dislocation loops of about 50 Å diameter. It is concluded that this technique can be used to obtain very good annealing of implanted layers.     

Impurity redistribution in Pb implanted and annealed silicon

Reordering of 〈111〉 silicon, implanted with Pb ions at energies >100 keV and fluences ～5 × 10¹⁵ cm^?2 is accompanied by substantial impurity indiffusion in addition to pronounced outdiffusion and accumulation at the near surface region.     

Segregation of Sn and Sb in a ternary Cu(1 0 0)SnSb alloy

Surface segregation studies of Sn and Sb in Cu(1 0 0)-0.14 at.% Sn-0.12 at.% Sb ternary alloy, have been done by making use of Auger Electron Spectroscopy. The method of Linear Temperature Ramp (LTR) was employed, whereby the sample was heated and cooled linearly at a constant rate. The positive heating rate showed both a kinetic segregation profile, as well as a narrow equilibrium segregation region, at higher temperatures. The equilibrium segregation profile was extended by cooling the sample. Sn was first to segregate to the surface due to its higher diffusion coefficient, mainly from a smaller activation energy E_Sn. Sb, due to its higher segregation energy, eventually replaced Sn from the surface. The modified Darken model was used to simulate the profile yielding the following segregation parameters: D_o(Sn) = 6.3 × 10⁻⁶ m²/s, D_o(Sb) = 2.8 × 10⁻⁵ m²/s; E_Sn = 175.4 kJ/mol, E_Sb = 186.3 kJ/mol; , ; Ω_Cu-Sn = 3.4 kJ/mol, Ω_Cu-Sb = 15.9 kJ/mol and Ω_Sn-Sb = −5.4 kJ/mol.     

Photoacoustic monitoring of damage in ion implanted and annealed si layers

The photoacoustic technique has been used to characterize ion implanted Si layers, as a function of the implantation conditions of ion dose and energy and of thermal annealing conditions, through the determination of the material thermal conductivity and optical absorption coefficient. It was found that the technique can discriminate between amorphous material obtained under different implantation conditions. Regarding the annealed samples, different results have been obtained for amorphous as-implanted, fine grain polycrystalline, highly defective single crystalline and defect-free single crystalline materials.     

Surface structure and composition of the missing-row reconstruction of VC0.8(1 1 0): A LEED, GIXRD and photoemission study

Low energy electron diffraction, grazing incidence X-ray diffraction and photoemission were used to decipher the detailed structural arrangement and chemical composition of the surface region of a transition metal carbide, VC_0.8(1 1 0). In agreement with previous scanning tunneling microscopy (STM) studies, we find that the surface reconstructs with a ridge-and-valley grating structure along the direction resulting from {0 0 1} faceting for the (3 × 1) and the (4 × 1) phases.Both superstructures terminate on the vacuum side with a nearly stoïchiometric VC region due to C segregation, in contrast with the conclusions drawn from this previous STM study. However, the present experiments clearly show that these phases are metastable, and slow cooling results in a (1 × 1) surface, which is highly C depleted, similarly to the (1 0 0) face.     

Grain Boundary Diffusion and Linear and Non-Linear Segregation of Ag in Cu

Ag grain boundary (GB) diffusion was measured in the Cu-0.2at%Ag alloy in a wide temperature range from 473 to 970 K. The direct measurements of Ag GB diffusivity D ^alloy _gb under conditions of the Harrison C regime revealed that D ^alloy _gb is almost identical to D ^pure _gb determined earlier for Ag diffusion in high-purity Cu (Divinski, Lohmann, and Herzig, 2001). The penetration profiles determined in the Harrison B regime showed a complex, multi-stage shape. This diffusion behavior can be rationalized assuming that besides GBs significantly covered by segregated Ag atoms, some fraction of GBs remains almost free from Ag atoms in the studied temperature interval. The total amount of pure GBs drastically decreases with decreasing temperature. This hypothesis was proven by measurements of Ag GB diffusion in Cu near 5 bicrystals, which allowed us to analyze in detail the non-linear segregation of Ag in Cu GBs.     

Failure behavior of ITO diffusion barrier between electroplating Cu and Si substrate annealed in a low vacuum

A structure of Cu/ITO(10 nm)/Si was first formed and then annealed at various temperatures for 5 min in a rapid thermal annealing furnace under 10⁻² Torr pressure. In Cu/ITO(10 nm)/Si structure, the ITO(10 nm) film was coated on Si substrate by sputtering process and the Cu film was deposited on ITO film by electroplating technique. The various Cu/ITO(10 nm)/Si samples were characterized by a four-point probe, a scanning electron microscope, an X-ray diffractometer, and a transmission electron microscope. The results showed that when the annealing temperature increases near 600 °C the interface between Cu and ITO becomes unstable, and the Cu₃Si particles begin to form; and when the annealing temperature increases to 650 °C, a good many of Cu₃Si particles about 1 μm in size form and the sheet resistance of Cu/ITO(10 nm)/Si structure largely increases.     

Defects in pulsed laser and thermal processed ion implanted silicon

The evolution of the nature and concentration of the defects produced by 100 or 300 keV As ions at fluences 1 to 4×10^–12 cm^–2 inn-type, Fz Silicon doped with 10¹⁵ to 10¹⁶ cm^–3 has been studied as function of thermal treatments (in the range 500°–900 °C) and of the energy density (in the range 0.3–0.6 J cm^–2) of a light pulse from a ruby laser (15 ns, 0.69 m). Deep-level transient spectroscopy (DLTS) combined with capacitance — voltage (C-V) measurements were used to get the characteristics (energy level, crosssection for the capture of majority carriers) of the defects and theirs profiles. The difficulties encountered in the analysis of the results, due to the large compensation of free carriers in the implanted region and to the abrupt defect and free carrier profiles, are discussed in detail and the corrections to apply on the C-V characteristics and the DLTS spectra are described. The defects resulting from the two types of treatments are found to be essentially the same. Only, for laser energies higher than 0.5 J cm^–2, the laser treatment appears to introduced new defects (atE0.32 eV) which should result from a quenching process. The fact that a laser energy smaller than the threshold energy for melting and recrystallization is able to anneal, at least partially, the defects produced by the implantation, demonstrates that the annealing process induced by the laser pulse is not a purely thermal process but is enhanced by a mechanism involving ionization.     

Disorders produced during high-current and high-dose phosphorus ion implantation in silicon

Transmission electron microscopy, optical reflection and channeling effect measurements are employed to investigate disorders in 30 keV, high dose (3×10¹⁶ions/cm²) and high current (≦5 mA) phosphorus as-implanted silicon with (111), (100), and (110) orientation as a function of temperature rise (100–850°C) by the beam heating effect during implantation. Temperature rise below 400°C results in continuous amorrphous layer formation. This contrasts with results of the recovery into single crystals for temperature rise samples above 500°C, regardless of wafer orientation. Secondary defects (black-dotted defects, dislocation loops and rodlike defects) are formed in singlecrystal recovery samples, having a deeper distribution in (110) wafers and a shallower distribution in (111) and (100) wafers. Rodlike defects observed in 850°C samples are of “vacancy” type and have the largest density in (110) wafers.     

Grain Boundary Motion during Ag and Cu Grain Boundary Diffusion in Cu Polycrystals

Grain boundary (GB) motion in high-purity Cu material (5N8 and 5N Cu) is investigated using the results of radiotracer GB diffusion measurements with tracers exhibiting fundamental differences in the solute-matrix atom interactions. The results on GB solute diffusion of Ag (revealing a miscibility gap in the Ag-Cu phase diagram) and Au (forming intermetallic compounds with Cu) in Cu and on Cu self-diffusion are analyzed.The initial parts of the Ag and Cu penetration profiles turned out to be substantially curved. The profile curvature is explained via the effect of GB motion during ^110m Ag and ⁶⁴Cu GB penetration. The activation enthalpies of GB motion in these two independent measurements occurred to be very close, 95 and 103 kJ/mol, respectively. Moreover, these values turn out to be close, but still somewhat larger than the activation enthalpy of Cu GB self-diffusion in Cu material of the same very high purity, Q ^Cu _gb = 72 kJ/mol. Although tracer diffusion measurements of Au GB diffusion in Cu yielded only limited information on GB motion, the absolute values of GB velocities are consistent with those calculated from the Ag and Cu GB diffusion data.     

An Atomistic Study of Interfacial Diffusion in Lamellar TiAl Alloys

In this paper we investigate self-diffusion of Ti and Al along interfaces present in the lamellar L1₀ TiAl by atomistic computer modeling. The interactions between the atoms are described by central-force many-body potentials. The approach adopted is similar to that used in earlier atomistic modeling of bulk diffusion in TiAl [1, 2]. Both the formation and migration of vacancies is examined. The interfaces studied are the three types of –interfaces: ordinary twin, pseudotwin and 120° rotational fault. For the latter two interfaces the diffusion was investigated not only for the stoichiometric case but also when the interfaces possess a surplus of titanium in the form of a layer with the composition and structure of Ti₃Al, as was found in an earlier Monte Carlo study of titanium segregation to these interfaces. The calculations suggest that the diffusivity along –interfaces is higher than in the bulk. However, the difference between bulk and interfacial diffusivity is not as drastic as it may be encountered in grain boundaries. At the same time the above mentioned surplus of Ti appears to affect the interfacial diffusion only marginally.     

Iron contamination in ion implanted silicon,as revealed by x-ray and electron diffraction

A surface contamination effect was detected by double-crystal x-ray diffraction analysis of silicon wafers implanted with silicon ions at different doses and energies after annealing at 700 °C.The hypothesis of recoiled oxygen from the native oxide, as the impurity responsible for surface strain, was excluded by x-ray characterization of a series of samples implanted through thermally grown silicon oxides. The surface positions of the strain, resulting from x-ray analysis after 700 °C annealing and the analysis of the electron diffraction patterns, taken on particles originated from precipitation of the impurity by 1000 °C heating, allowed to conclude that the contamination phenomenon is due to iron atoms coming from the ion implanter.     

Competition between surface energy and interphase energy in transition region and diameter-dependent orientation of silicon nanowires

A small sandwiched transition region between the Au catalysis droplet and silicon nanowires (SiNWs) is proposed to investigate the diameter-dependent orientation of SiNWs grown by the vapor-liquid-solid (VLS) mechanism. Atomic-scale calculation shows that for a given transition region width, there is always a critical diameter. Below the critical value, surface energy dominates and the 〈1 1 0〉 orientation is preferred, whereas at larger diameters, the interphase energy dominates and SiNWs grow along the 〈1 1 1〉 direction. The variability of the critical diameter is also included in our model by adjusting the transition region width. The theoretical results are in agreement with those from experiments.     

Alloy formation in the Au{1 1 1}/Ni system - An investigation with scanning tunnelling microscopy and medium energy ion scattering

Using the techniques of scanning tunnelling microscopy (STM) and medium energy ion scattering (MEIS), we examine the growth and annealing behaviour of ultrathin Ni films on Au{1 1 1} at 300 K. As has been shown previously, submonolayer growth of Ni on Au{1 1 1} is strongly influenced by the presence of the herringbone reconstruction with two-dimensional clusters nucleating at herringbone elbows. Second layer growth commences prior to the completion of the monolayer. After multiple layers have been deposited, the surface morphology retains a similar cluster-like appearance. Annealing produces surfaces exhibiting long range Moiré structures and, at higher temperature, triangular misfit dislocations. We use MEIS to examine the composition and structure of these surface alloy phases and conclude that in each case, they consist of an essentially pure Au surface layer on a bimetallic second layer.     

Internal charge distribution of iodine adatoms on silicon and silicon oxide investigated with alkali ion scattering

Time-of-flight spectra were collected for low energy ⁷Li⁺ and ²³Na⁺ ions backscattered from Si(1 1 1) surfaces covered with sub-monolayers of iodine. Li ions singly scattered from the iodine adatoms have consistently larger neutralization probabilities than those scattered from the silicon substrate, and the neutralization decreases with off-normal emission. This indicates that the internal charge distribution of the iodine adatoms is not uniform, presumably due to attraction of electron density to the positively charged bonding Si atom. Photoelectron spectroscopy shows that iodine adsorbed on pre-oxidized Si bonds through the oxygen atom, forming hypoiodite (-OI) moieties. The neutralization of ²³Na⁺ backscattered from such iodine adatoms is independent of the emission angle, indicating that there is less charge rearrangement than for iodine bonded directly to Si.     

Modification in etching characteristics and surface topography of some electron irradiated polymers

Track formation in polymers is a complex phenomenon in which not only primary but also secondary processes, such as formation of radicals and chemical processes, are involved. In the present work, the influence of 2 MeV electrons on the etching properties and the surface topography of polyethylene terephthalate (PET) and polyimide (PI) are studied. The increase in the bulk etch-rate and a decrease in the activation energy of etching were observed for both the polymers. The surface roughness of both polymers was reduced due to electron irradiation.     

Collision-induced diffusion and vacancy migration in alkanethiol monolayers on Au(1 1 1)

Scanning tunneling microscopy is used to characterize the collision-induced migration of molecules within well-ordered octanethiol and nonanethiol self-assembled monolayers. A seeded molecular beam is used to create xenon atoms with a kinetic energy of 1.3 eV, and collisions with these atoms cause measurable changes in alkanethiol monolayer surface structure. Migration rates are calculated and compared for molecules in close-packed domains, at domain-boundary defects, and along the perimeter of vacancy-island defects. The number of nearest-neighbor molecules (within the 5 Å lattice distance) is strongly predictive of molecular stability with respect to xenon bombardment, and the overall dependence of stability on nearest neighbors is well fit by a simple exponential curve. The incident direction of the molecular beam is not observed to influence the direction of molecular motion; however, in some cases, migration correlates strongly to surface lattice directions. Finally, there is no evidence that substrate restructuring or gold-atom diffusion accompanies alkanethiol migration under these non-equilibrium conditions.     

Investigation of mass and energy coupling between soot particles and gas species in modelling ethylene counterflow diffusion flames

A numerical model is developed aiming at investigating soot formation in ethylene counterflow diffusion flames. The mass and energy coupling between soot solid particles and gas-phase species is investigated in detail. A semi-empirical two-equation model is chosen for predicting soot mass fraction and number density. The model describes particle nucleation, surface growth, and oxidation. A detailed kinetic mechanism is considered for the gas phase and the effect of considering radiation heat losses is also evaluated. Simulations were done for a range of conditions that produce low-to-significant amounts of soot using three strategies: first by changing the strain rate imposed on the flow field, second, by changing the oxygen content in the oxidant stream, and third, by changing the pressure. Additionally, the effect of the transport model chosen was analysed. The results showed that, for the flames studied and within the limits of the present work, the soot and gas radiation terms are of primary importance for numerical simulations. Additionally, it was shown that the soot mass and thermodynamic properties coupling terms are, in general, a second-order effect, with an importance that increases as soot amount increases. As a general recommendation, the radiation terms have always to be considered, whereas full coupling has to be employed only when the soot mass fraction, Y_S, is equal to or larger than 0.008. If a higher precision is required, with errors less than 1%, full coupling should be taken into account for Y_S ≥ 0.002. For lower soot amounts, the coupling through soot mass and thermodynamic properties may be neglected as a first approximation, but an error on the total mass conservation will be present. Additionally, discrepancies from considering different transport models (detailed or simplified) are larger than those found from not fully coupling the phases.     

纤锌矿ZnO：Cu体系空位缺陷的电磁特性理论研究

ZnO:Cu体系具有p型导电性并出现室温铁磁性,但是对于其磁性来源还颇有争议.用Cu掺杂ZnO晶体容易增加空位缺陷产生的几率,从而使ZnO:Cu体系产生磁性.因此,本文采用基于密度泛函理论的第一性原理平面波超软赝势法对ZnO:Cu及其本征空位缺陷体系进行了理论研究,分别计算分析了ZnO:Cu超晶胞中相对Cu为近邻、次近邻、远近邻位置锌空位和氧空位的出现后体系的晶格结构、形成能、能带结构、态密度以及磁矩,以便准确合理地对其电磁特性进行判定.结果表明,ZnO:Cu远近邻VZn容易形成且其费米能级附近态密度较无缺陷体系增大,导电性增强;而含VO的缺陷体系禁带远远增大且变为间接带隙半导体,其费米能级处的态密度几乎不变或微弱减小,导电性无增强.Cu近邻VZn和VO的引入会导致ZnO:Cu掺杂系统的磁性相几乎或完全消失,但较远VO的出现无法显著改变磁性,较远VZn的出现使体系磁性增强.因此,在实验过程中要实现ZnO:Cu掺杂体系的良好电磁特性,应尽量避免Cu近邻VZn和VO的出现,而有效利用远近邻锌空位缺陷.     

Enhanced reactivity and selectivity in oxidation of Cu(1 0 0) and α-Cu-Al(5 at.%)(1 0 0) surfaces studied by electron and ion spectroscopies

In this study we investigate the influence of alloying on the reactivity and bonding of oxygen on α-Cu-Al(5 at.%)(1 0 0) oriented single crystal surfaces by X-ray photoelectron spectroscopy (XPS), ultra-violet spectroscopy (UPS) and low energy ion scattering (LEIS) spectroscopy, at room temperature. It was found that alloying results in an enhanced reactivity of both Cu and Al sites in comparison with the pure metals. According to adsorption curves calculated from XPS, saturation of the alloy surface occurs for exposures of ∼15 L. At saturation the total amount of adsorbed oxygen is similar for the alloy and pure copper surfaces. It was determined that first mostly Al sites are oxidized, followed by simultaneous oxidation of Cu and Al sites. At saturation the amount of oxygen bonded to Cu sites is ∼1.7 larger then that bonded to Al sites. From a comparison of the XPS and LEIS data analysis as a function of oxygen exposure it was found that oxidation of α-Cu-Al(5 at.%)(1 0 0) alloy is a multi-stage process with fast and slow stages. These stages involve an interplay of chemisorption, sub-surface diffusion of oxygen and Al segregation. UPS measurements show an increase in the work function of the alloy surface with oxygen adsorption. This is a contrast to pure Cu surfaces where the work function decreases at the initial stages of oxidation followed by an increase with oxygen exposure. Annealing to 400 °C drives the oxidized alloy surface into its thermodynamic state resulting in the formation of an aluminum oxide layer. Possible mechanisms to explain the enhanced reactivity of the alloy surface compared to that of pure copper are suggested and discussed.