Annealing of γ-ray irradiated lithium compensated p-type silicon

Abstract

Annealing behavior of electrical properties and photoluminescence spectra both at 77 °K in electron-irradiated melt-grown n-GaAs were investigated. Defects electrically active in the Hall mobility and carrier removal anneal through two stages centered at 250° and 460 °K. From the temperature dependence of carrier concentration the existence of a defect level located near 0.15 eV below the conduction band is supposed. Several emission bands are resolved at 1.51, 1.47, 1.415, 1.305 and ～1.2 eV in photoluminescence experiments. Electron irradiation (1.5–2.0 MeV) causes a remarkable decrease in emission intensity of 1.51 and ～1.2 eV bands. Recovery of emission intensity occurs remarkably when samples are annealed to 520 °K which would correspond to the 460 °K annealing stage for carrier concentration and Hall mobility. The 250 °K annealing stage is not observed in photoluminescence experiments. The 1.415 eV peak appears clearly after irradiation and grows remarkably with the 520 °K annealing, especially in Si-doped samples, resulting in large reverse annealing. This band is tentatively speculated to be a complex of Si on As site with As vacancy. Moreover, in samples doped with Te a new emission band at 1.305 eV (9500 Å) is observed after 470°–620 °K annealing.     

Impurity dependence of the low temperature annealing in n-type germanium

Lightly doped n-type Ge, irradiated at liquid He temperatures with 1 MeV electrons, exhibits a large thermal recovery stage at 50–70°K. We have found that the rate at which this stage anneals depends on the type of group V impurity used to dope the sample. We Propose that impurity complexes are involved in this annealing stage. We have also observed the same impurity dependence when this annealing stage is destroyed by radiation annealing at liquid He temperatures. This suggests that one of the defects produced during irradiation is free to migrate at very low temperatures.     

Controlled synthesis of photoluminescent Bi<Subscript>4</Subscript>Ti<Subscript>3</Subscript>O<Subscript>12</Subscript> nanoparticles from metal-organic polymeric precursor

Bi₄Ti₃O₁₂ (BIT) nanoparticles with a narrow average particle size distribution in the range of 11–46 nm was synthesized via a metal-organic polymeric precursor process. The crystallite size and lattice parameter of BIT were determined by XRD analysis. At annealing temperatures >550 °C, the orthorhombic BIT compound with lattice parameters a = 5.4489 Å, b = 5.4147 Å, and c = 32.8362 Å was formed while at lower annealing temperatures orthorhombicity was absent. Reaction proceeded via the formation of an intermediate phase at 500 °C with a stoichiometry close to Bi₂Ti₂O₇. The particle size and the agglomerates of the primary particles have been confirmed by FESEM and TEM. The decomposition of the polymeric gel was ascertained in order to evaluate the crystallization process from TG-DSC analysis. Raman spectroscopy was used to investigate the lattice dynamics in BIT nanoparticles. In addition, investigation of the dependence of the visible emission band around the blue–green color emission on annealing temperatures and grain sizes showed that the effect of grain size plays important roles, and that oxygen vacancies may act as the radiative centers responsible for the observed visible emission band.     

Charge states of the activator and size effects in BaF2: Eu nanophosphors

ABSTRACT

According to the spectra of stationary X-ray excited luminescence (XEL) of BaF₂: Eu nanophosphors at 80 and 294 K, it was revealed that the thermal annealing of fine-grained nanoparticles (d?=?35?nm) in the range of 400–1000°C, which is accompanied by an increase of their sizes in the range of 58–120?nm, does not result in effective changes of the charge state of Eu^{3 +} → Eu^{2 +} activator, in contrast to CaF₂: Eu nanoparticles. The maximum light output of X-ray excited luminescence of BaF₂: Eu nanophosphors in the 590?nm emission band of Eu³⁺ ion was observed at an annealing temperature of 600°C with the average size of nanoparticles 67?nm. The subsequent growth of annealing temperatures, especially in the range of 800–1000°C, causes decrease in the light output of X-ray excited luminescence due to the increase of defect concentration in the lattice as a result of sharp increase of nanoparticle sizes and their agglomeration. In BaF₂: Eu nanoparticles of 58?nm size, according to the thermostimulated luminescence (TSL) spectrum, transformation of Eu³⁺ → Eu²⁺ under the influence of long-time X-ray irradiation was revealed for the peak of 151?K. Thus, X-ray excited luminescence spectra of BaF₂: Eu nanophosphors are formed predominantly due to the emission of Eu³⁺ ions, while emission of Eu²⁺ ions is observed in the TSL spectra.     

EPR and Magnetization Studies of Polymer-Derived Fe-Doped SiCN Nanoceramics Annealed at Various Temperatures: Blocking Temperature,Superparamagnetism and Size Distributions

X-band EPR spectra on SiCN ceramics, doped with Fe(III) ions, annealed at 800 °C, 1000 °C, 1100 °C, 1285 °C, and 1400 °C have been simulated to understand better their magnetic properties, accompanied by new magnetization measurements in the temperature range of 5–400 K for zero-field cooling (ZFC) and field cooling (FC) at 100C. The EPR spectra reveal the presence of several kinds of Fe-containing nanoparticles with different magnetic properties. The maxima of the temperature variation of ZFC magnetization were exploited to estimate (i) the blocking temperature, which decreased with annealing temperature of the samples and (ii) the distribution of the size of Fe-containing nanoparticles in the various samples, which was found to become more uniform with increasing annealing temperature, implying that more homogenous magnetic SiCN/Fe composites can be fabricated by annealing at even higher temperatures than 1400 °C to be used as sensors. The hysteresis curves showed different behaviors above (superparamagnetic), below (ferromagnetic), and about (butterfly shape) the respective average blocking temperatures, 〈T_B〉. An analysis of the coercive field dependence upon temperature reveals that it follows Stoner–Wohlfarth model for the SiCN/Fe samples annealed above 1100 °C, from which the blocking temperatures was also deduced.     

Evolution of the spectral characteristics upon annealing of lithium borate glasses containing europium and aluminum

The spectral and structural characteristics of lithium borate glasses containing europium and aluminum have been investigated upon annealing at different temperatures. It has been found that the spectral characteristics of the studied system change nonmonotonically with an increase in the annealing temperature. After annealing at a temperature of 600°C, the luminescence spectra of the glasses exhibit broad structureless bands that are specific for the amorphous phase containing Eu³⁺ ions. Then, after annealing at T = 700°C, narrow lines appear in the wavelength ranges 585–595 and 610–620 nm, which correspond to the luminescence of the Eu(BO₂)₃ and EuAl₃(BO₃)₄ borates. A further increase in the annealing temperature (T = 800–900°C) leads to the disappearance of europium aluminum borate. In the luminescence spectra of these samples, there are narrow bands in the wavelength range λ = 585–595 nm, which are typical of europium metaborate. Finally, at a temperature of 1050°C, these bands disappear and narrow lines appear again in the wavelength range 610–620 nm, which are characteristic of the EuAl₃(BO₃)₄ borate. Thus, the temperature annealing makes it possible to purposely change the spectral characteristics of the studied system in the wavelength range 590–615 nm.     

Li-defect interactions in electron-irradiated n-type silicon by EPR measurements

Single crystal silicon, both with and without oxygen, has been diffused with lithium to concentrations ～10¹⁷/cm², irradiated with 1 to 1.5 MeV electrons, and the ensuing defects studies by EPR measurements. The presence of oxygen strongly affects the properties of these defects. Measurements have indicated the presence of two new defects which involve Li-one in O-containing material and one in O-free material. The defects are observed in their electron-filled state, and indicate a net electron spinof ½. The defect spectra disappear (with time) at room temperature, and can be explained by the formation of other Li-involved defects which lie deeper in the energy bandgap and are not visible by EPR. Electron irradiation at 40 °K followed by annealing at higher temperatures show that both EPR defects described above begin to form at about 200 °K and begin to decrease at about 275 °K-just as does the 250 °K reverse annealing observed generally for n-type Si. Based on these data, and the work of others, it is suggested that both defects form as a result of the motion of Si interstitials which produce a (Li-O-interstitial) complex in O-containing Si, and a (Li-interstitial) complex in O-free Si.     

Electronic phase separation in TmBa2Cu4O8

The NQR spectra of Cu(2) in the superconductor TmBa₂Cu₄O₈ are studied at temperatures from 300 to 4.2 K. In analyzing the spectra it is assumed that the NQR line of each isotope contains two Gaussian components — narrow (n) and broad (b). It is discovered that the NQR frequencies have a minimum at the temperature T*=150 K. The frequencies of the components of the spectrum are close at temperatures from T* to 4.2 K and differ substantially at temperatures T>T*. Both components are broadened as the temperature decreases, but this broadening occurs especially rapidly at temperatures T<T*. The relative intensity of the narrow component I _n/(I _n+I _b) equals 1/6 for T=225−160 K, increases abruptly at T=T*, and remains constant (1/3) at temperatures T from 125 to 4.2 K. Analysis of the experimental data showed that the anomalous temperature dependences of the Cu(2) NQR spectra could be due to electronic phase separation (stratification) in the CuO₂ planes at temperatures T⩽T*. Pis’ma Zh. éksp. Teor. Fiz. 63, No. 3, 214–219 (10 February 1996)     

Photoconductivity of chemically deposited lanthanum/neodymium doped (Cd - Pb)S films

Abstract

Results of photoconductivity rise and decay, optical absorption and photoconductivity excitation spectra are presented for different chemically deposited (Cd–-Pb)S films. The ratio of saturated photocurrent of rise curves (I_pc) to dark current (I_DC) is found to be of the order of 10⁵ for undoped (Cd_0.95–-Pb_0.05)S films which improves to 10⁶ for the systems prepared with NaF end Lanthanum/Neodymium nitrate. When annealing the films at 400°C for 2 minutes, the dark current decreases to almost zero, along with a decrease in the photocurrent, but the I_pc/I_DC ratio goes to a very high value. From the analysis of the decay curves lifetime of carriers are found to be 31.11 sec, 48.01 sec, 47.77 sec and 94.66 sec for (Cd_0.95–-Pb_0.05)S; (Cd_0.95–-Pb_0.05)S: NaF; (Cd_0.95–-Pb_0.05) S: NaF, La and (Cd_0.95 –- Pb_0.05)S: NaF, Nd respectively. Further the mobility of carriers for these systems are found to be 51.44 cm²/V-s, 93.33 cm²/V-s, 94.83 cm²/V-s and 164.78 cm²/V-s respectively. Band gaps determined from optical absorption and photoconductivity excitation spectra gave similar results. The direct band gap nature is found for mixed films. Results of different irradiation conditions during preparation of the films are also investigated.     

Recombination of close frenkel defects in gold

The occurrence of close-vacancy-interstitial-pairs in electron-irradiated gold and the annealing temperature of this type of defect have been investigated by means of “sub-threshold” irradiations. Different samples have been irradiated with 3 MeV electrons at five different temperatures between 7.5°K and 36°K. These samples containing Frenkel defects have then been irradiated at 12°K with 1.2 MeV electrons. This energy is less than the threshold for defect production. During the sub-threshold irradiation, defect annihilation rates have been measured which depend strongly on the temperature at which the defects had been produced. For 7.5°K and 12°K they are of the same order of magnitude as were found in Al, Cu, Pt, and Ta, and were ascribed to recombination of closevacancy-interstitial-pairs. For defects produced at 22°K the annihilation rate is smaller by one order of magnitude and even smaller for defects produced at still higher temperatures. It is concluded from this that close-pairs become thermally unstable in gold between 12 and 22°K.     

Mössbauer study of Fe in 3C-SiC following 57Mn implantation

Our investigations on substitutional and interstitial Fe in the group IV semiconductors, from ⁵⁷Fe Mössbauer measurements following ⁵⁷Mn implantation, have been continued with investigations in 3C-SiC. Mössbauer spectra were collected after implantation and measurement at temperatures from 300 to 905 K. Following comparison with Mössbauer parameters for Fe in Si, diamond and Ge, four Fe species are identified: two due to Fe in tetrahedral interstitial sites surrounded, respectively, by four C atoms (Fe_i.C) or four Si atoms (Fe_i,Si) and two to Fe in (or close to) defect free or implantation damaged substitutional sites. An annealing stage at 300–500 K is evident. Above 600 K the Fe_i,Si fraction decreases markedly, reaching close to zero intensity at 905 K. This is accompanied by a corresponding increase in the Fe_i,C fraction.     

Optical investigation of HoFeO3

The absorption spectra of HoFeO₃ were investigated in the near infrared spectral region at temperatures of 1.2, 4.2, 20 and 77 °K respectively. At every temperatureT≦20 °K all the absorption lines show the same splitting which is attributed to the groundstate; this splitting is (7.2±0.5) cm^?1 at 20 °K and decreases to (4.9±0.8) cm^?1 extrapolated to 0 °K. From these splittings the holmium-iron and the holmiumholmium interactions can be deduced. Measurements with an external magnetic field yield a magnetic moment ofμ=(7.6±0.7)μ _B per holmium ion. The moments are directed at angles of ?28° and ?152° with respect to theb-axis.     

Influence of γ-radiation on photoconductivity spectra of InSe monocrystals

The influences of γ-radiation with photon energy hν ～ 1.23 MeV on photoconductivity of layered InSe crystals have been studied. The photosensitivity is increased because of small doses of γ-radiation. It has been observed that γ-radiation makes the impurity peaks in the photoconductivity spectra disappear. This process is attributed to the phenomenon of irradiation annealing characterized by formation of the complexes including fine impurity centers and specific γ-radiation defects.     

Transformation of As-Grown Phosphorus-Related Centers in HPHT Treated Synthetic Diamonds

This communication presents new data on phosphorus-containing centers in synthetic diamonds grown in the P–C system by high-pressure high-temperature (HTHP) method and annealed in the temperature range of 2,073–2,573 K. The electron paramagnetic resonance (EPR) study has shown that as-grown at 1,873 K diamonds contain single substitutional nitrogen (P1) and single substitutional phosphorus (MA1) centers. The main part of the spin density in the MA1 center locates on the carbon atom C₁ separated from phosphorus by one carbon atom. HPHT annealing (7 GPa, 2,073–2,273 K) results in aggregating substitutional nitrogen and phosphorus atoms. On the first step of annealing (2,073 K) of as-grown diamonds nitrogen–phosphorus NIRIM8 (NP1) centers are created. It is supposed that nitrogen and phosphorus atoms in this center are separated by two carbons. Further temperature increasing shifts the nitrogen atom toward phosphorus and creates two new nitrogen–phosphorus centers NP2 and NP3 with the supposed structures C₁–N–C–P and N–P–C₁, respectively. The main part of the spin density in MA1, NIRIM8 (NP1), NP2 and NP3 is located on the carbon atom C₁. Annealing these samples in the temperature range of 2,073–2,273 K has shown vanishing of NIRIM8 and increasing of NP2 and NP3 centers. HPHT annealing of diamonds at 2,573 K significantly changes the electron paramagnetic resonance (EPR) spectra: all previous nitrogen–phosphorus centers disappear and two new phosphorus centers NP4 and NP5 are created. Features of these centers are g ≈ 2.001 and high spin density located on the phosphorus atoms. The NP5 center is sensitive to X-ray irradiation and low-temperature annealing. The EPR spectra of both these centers are due to the hyperfine structure of one phosphorus atom. The structures of all phosphorus-containing centers are discussed.     

The charge states’ conversion of the activator ions in CaF2:Eu nanophosphors

According to stationary X-ray-excited luminescence spectra and thermally stimulated luminescence spectra of CaF₂:Eu nanophosphors, it was found that Eu³⁺?→?Eu²⁺ conversion can occur during thermal annealing of fine-grained (d?=?25?nm) nanoparticles in the 200–800°C range, which is accompanied by an increase in their size within 40–189?nm. An important role of the exciton mechanism of Eu²⁺ luminescence excitation was revealed according to the temperature dependence of X-ray-excited luminescence spectra of CaF₂:Eu nanoparticles of 114?nm size. The maximum of the X-ray-excited luminescence light output of CaF₂:Eu nanophosphors in the Eu²⁺ ions’ emission band was traced out at 400–500°C annealing temperature and at the size of nanoparticles of 114–180?nm. The subsequent growth of the annealing temperatures, particularly in the 800–1000°C range, causes the reduction of X-ray-excited luminescence light output because of the increment of lattice defects’ concentration due to a sharp increase in the size of nanoparticles and their agglomeration.     

Effect of simultaneous helium implantation on the microstructure evolution of Inconel X-750 superalloy during dual-beam irradiation

This study focuses on investigation into the effect of helium implantation on microstructure evolution in Inconel X-750 superalloy during dual-beam (Ni⁺/He⁺) irradiation. The 1 MeV Ni⁺ ions with the damage rate of 10^?3 dpa/s as well as 15 keV He⁺ ions using rate of 200 appm/dpa were simultaneously employed to irradiate specimens at 400 °C to different doses. Microstructure characterization has been conducted using high-resolution analytical transmission electron microscopy (TEM). The TEM results show that simultaneous helium injection has significant influence on irradiation-induced microstructural changes. The disordering of γ′ (Ni₃ (Al, Ti)) precipitates shows noticeable delay in dose level compared to mono heavy ion irradiation, which is attributed to the effect of helium on promoting the dynamic reordering process. In contrast to previous studies on single-beam ion irradiation, in which no cavities were reported even at high doses, very small (2–5 nm) cavities were detected after irradiation to 5 dpa, which proved that helium plays crucial role in cavity formation. TEM characterization also indicates that the helium implantation affects the development of dislocation loops during irradiation. Large 1/3 〈1?1?1〉 Frank loops in the size of 10–20 nm developed during irradiation at 400 °C, whereas similar big loops detected at higher irradiation temperature (500 °C) during sole ion irradiation. This implies that the effect of helium on trapping the vacancies can help to develop the interstitial Frank loops at lower irradiation temperatures.     

Structure and electrical properties of Sb2Te3 and Bi0.4Sb1.6Te3 metastable phases obtained by HPHT treatment

We have obtained the metastable phase of the thermoelectric alloy Bi_0.4Sb_1.6Te₃ with electron type conductivity for the first time using the method of quenching under pressure after treatment at P=4.0 GPa and T=400–850 °C. We have consequently performed comparative studies with the similar phase of Sb₂Te₃. The polycrystalline X-ray diffraction patterns of these phases are similar to the known monoclinic structure α-As₂Te₃ (C2/m) with less monoclinic distortion, β ≈ 92°. We have measured the electrical resistivity and the Hall coefficient in the temperature range of T=77?450 K and we have evaluated the Hall mobility and density of charge carriers. The negative Hall coefficient indicates the dominant electron type of carriers at temperatures up to 380 K in the metastable phase of Sb₂Te₃ and up to 440 K in the metastable state of Bi_0.4Sb_1.6Te₃. Above these temperatures, the p-type conductivity proper to the initial phases dominates.     

Short-range order clustering in BCC Fe–Mn alloys induced by severe plastic deformation

The effect of severe plastic deformation, namely, high-pressure torsion (HPT) at different temperatures and ball milling (BM) at different time intervals, has been investigated by means of Mössbauer spectroscopy in Fe_100–xMn_x (x = 4.1, 6.8, 9) alloys. Deformation affects the short-range clustering (SRC) in BCC lattice. Two processes occur: destruction of SRC by moving dislocations and enhancement of the SRC by migration of non-equilibrium defects. Destruction of SRC prevails during HPT at 80–293 K; whereas enhancement of SRC dominates at 473–573 K. BM starts enhancing the SRC formation at as low as 293 K due to local heating at impacts. The efficiency of HPT in terms of enhancing SRC increases with increasing temperature. The authors suppose that at low temperatures, a significant fraction of vacancies are excluded from enhancing SRC because of formation of mobile bi- and tri-vacancies having low efficiency of enhancing SRC as compared to that of mono vacancies. Milling of BCC Fe_100–xMn_x alloys stabilises the BCC phase with respect to α → γ transition at subsequent isothermal annealing because of a high degree of work hardening and formation of composition inhomogeneity.     

Thermo-luminescence kinetic parameters of γ-irradiated Sr4Al14O25:Eu2+, Dy3+ phosphors

In this paper, we present a detailed investigation of the thermo-luminescence (TL) kinetics of the long afterglow phosphor, Sr₄Al₁₄O₂₅:Eu²⁺,Dy³⁺, synthesized by the combustion method. Kinetic parameters such as the activation energy (E_α), the frequency factor (s) and the order of kinetics (b) were calculated using Chen's formulism. The crystalline structure of the phosphor was examined using X-ray powder diffraction and transmission electron microscopy. The average particle size was found to be in the range of 45–52 nm. The optimum dopant concentrations were Eu (1 mol%) and that of Dy (2 mol%). The TL response of the phosphor was monitored after the samples were irradiated with a γ-dose using a ⁶⁰Co source in the 20-800 Gy range. A broad TL peak, (stretching from 328 to 410 K) with a maximum at 368 K was observed. With increasing irradiation dose, the main peak shifts toward higher temperatures. Symmetry factor calculations show that the main TL glow peak obeys second-order kinetics, which could be attributed to the creation of deep level traps. This means that γ-ray irradiation greatly affects the distribution of traps in the Sr₄Al₁₄O₂₅:Eu²⁺,Dy³⁺ phosphor. The phosphor showed a linear response with γ-dose.     

Synthesis of α-In 2 Te 3 thin films from In/Te bilayer by Si ion irradiation

In this work, In/Te bilayer thin films were prepared using sequential thermal evaporation method and subsequently irradiated using swift heavy ions (SHIs) of 100 MeV silicon (Si) with different fluences (1×10¹³ to 5×10¹³/cm²). The inter-diffusion of In and Te layers was highly controlled by SHI irradiation and the In₂Te₃ formation capability was compared with that of the conventional annealing method. The structural as well as optical properties of a post-sintered SHI-irradiated In/Te bilayer were investigated using X-ray diffraction (XRD) measurements and UV–visible spectroscopy, respectively. We found that irradiated samples showed single-phase In₂Te₃ under post-annealed conditions at 150 °C unlike that prepared using the conventional thermal annealing method, which showed mixed phases under similar conditions. This confirms the effective inter-diffusion in bilayer films by SHI irradiation toward the formation of single-phase In₂Te₃. The estimated optical band gap energy was found to be 1.1±0.5 eV and strongly corroborated the XRD results. In addition, the estimated refractive index (n) value of the SHI-irradiated sample (～3.3) was higher than that of the sample obtained through the conventional annealing method (～2.8). This proves that SHI offers a highly compact nature even at low temperatures. This work has a wide scope for achieving single-phase alloyed films through bilayer mixing by SHI irradiation.