Anomalous vortex dynamics in

We report on measurements of current–voltage (I–V) characteristics for YNi₂B₂C single crystals with weak pinning in various fields at 7.6 K. We find nonmonotonic, N-shaped I–V curves in a certain field region deep in the vortex solid phase. This behavior is anomalous, since there exists an intermediate I region where flow voltage V shows a decrease with increasing I (a driving force). While the exact nature remains unknown, this phenomenon suggests vortex motion (driving I) induced pinning.     

Magneto-tunneling spectroscopy of GaAs---AlGaAs double barrier tunneling devices in pulsed high magnetic fields up to 40T

The magneto-tunneling effect was investigated in GaAs---AlGaAs double barrier resonant tunneling devices in pulsed high magnetic fiels up to 40T applied parallel(B) and perpendicular (B) to the barrier layers. In a sample with , oscillatory structures due to the 2D electrons in the emitter and the LO phonon assisted resonant tunneling were observed when the magnetic field (B) was swept at constant bias voltages. A large drop of the current was found in the quantum limit at applied voltages below the negative differential conductivity region. A striking hysteresis was observed in the voltage-current (V - I) curves. In a wide well sample with , rich structures were observed in the V - I curve for B, corresponding to the tunneling to different cyclotron orbits from the emitter.     

Temperature dependence features of the photoluminescence spectral distribution of Li2B4O7 and Li2B4O7:Cu

The temperature dependence of the photoluminescence (PhL) spectral distributions has been reported for the lithium tetraborate Li₂B₄O₇ (LTB) and Li₂B₄O₇:Cu (LTB:Cu) single crystals and for glassy LTB:Cu. It was found that the emission peaks of the LTB and LTB:Cu single crystals are non-elementary and splittable by temperature increase into several elementary peaks. By the sample heating the temperature quenching of PhL as well as the redistribution of the PhL intensity among elementary peaks was observed. Heating of the LTB:Cu single crystal samples caused no shift of the spectral maxima of the individual PhL peaks. The curve describing the temperature dependency of individual PhL peaks for the LTB:Cu single crystal is characterized by maxima resulting from combination of PhL and thermostimulated luminescence (TSL). The PhL intensity for glassy LTB:Cu is significantly lower than that for LTB:Cu single crystal with the equivalent copper dopant content. As compared to the LTB:Cu single crystal, the PhL spectral maximum for glassy LTB:Cu is wider and shifted to the lower energy range. Heating of the glassy LTB:Cu sample results in the PhL temperature quenching without any shift of the spectral maximum.     

Comparison of 1 MeV electron,Co-60 gamma and 1 MeV proton irradiation effects on silicon NPN transistors

The total dose effects of 1?MeV electrons on the dc electrical characteristics of silicon NPN transistors are investigated in the dose range from 100?krad to 100?Mrad. The different electrical characteristics such as Gummel characteristics, excess base current (ΔI_B), dc current gain (h_FE), transconductance (g_m), displacement damage factor (K) and output characteristics were studied in situ as a function of total dose. A considerable increase in base current (I_B) and a decrease in h_FE, g_m and I_CSat was observed after 1?MeV electron irradiation. The collector–base (C–B) junction capacitance of transistors was measured to estimate the change in the effective carrier concentration. After 1?MeV electron irradiation, a considerable degradation in capacitance was observed. The plot of (1/C²) versus voltage shows that the effective carrier concentration and built-in voltage (V_bi) increase marginally upon 1?MeV electron irradiation. The results of 1?MeV electron irradiation were compared with 1?MeV proton and Co-60 gamma irradiation results in the same dose range. The degradation for 1?MeV electron and Co-60 gamma-irradiated transistors was significantly less when compared to 1?MeV proton-irradiated transistor. The 1?MeV proton, 1?MeV electron and Co-60 gamma-irradiated transistors were subjected to isochronal annealing to analyze the recovery of the electrical parameters.     

The effects of high-energy ion irradiations on the I–V characteristics of silicon NPN transistors

The silicon NPN rf power transistors were irradiated with different linear energy transfer (LET) ions such as 50?MeV Li³⁺, 80?MeV C⁶⁺ and 150?MeV Ag¹²⁺ ions in the dose range of 1–100?Mrad. The SRIM simulation was used to understand the energy loss and range of these ions in the transistor structure. The different electrical parameters such as Gummel characteristics, excess base current (ΔI_B), DC current gain (h_FE), displacement damage factor (K) and output characteristics were systematically studied before and after irradiation. The ion irradiation results were compared with ⁶⁰Co-gamma irradiation result in the same dose range. A considerable increase in base current (I_B) and a decrease in h_FE and I_CSat were observed after irradiation. The degradation in the electrical parameters was comparably very high for Ag¹²⁺ ion-irradiated transistor when compared to other ion-irradiated transistors, whereas the degradation in the electrical parameters for Li³⁺ and C⁶⁺ ion-irradiated transistors was comparable with gamma-irradiated transistor. The isochronal annealing study was conducted on the 100?Mrad irradiated transistors up to 500°C to analyze the recovery in different electrical parameters. The h_FE and other electrical parameters of irradiated transistors were almost recovered after 500°C for 50?MeV Li³⁺, 80?MeV C⁶⁺ ion and ⁶⁰Co-gamma-irradiated transistors, whereas for 150?MeV Ag¹²⁺ ion-irradiated transistor, the recovery in electrical characteristics is not complete.     

NMR-ON measurements of123, 124, 131I in nickel

The magnetic hyperfine splitting frequencies of¹²³INi,¹²⁴INi and¹³¹INi in a zero external magnetic field have been determined by the NMR-ON method as 258.9(1), 165.9(1) and 179.5(2) MHz, respectively. With the known values of the magnetic moments, the magnetic hyperfine fields have been deduced:B _HF(¹²³INi)=30.17(5) T,B _HF(¹²⁴INi)=30.14(9) T,B _HF(¹³¹INi)=30.06(4) T; the weighted average isB _HF(INi)=30.11(4) T. The small difference of theB _HF(¹³¹INi) with those of¹²³INi and¹²⁴INi is discussed comparing with results of the hyperfine splitting frequency of iodine in iron host.     

N NMR Echo in NH4ClO4after the Pulse Sequence (θ1)x–τ–(θ2)y–t

We have derived a closed-form expression for the solid echo signal of quadrupolarI= 1 nuclei after the pulse sequence (θ₁)_x–τ–(θ₂)_y–tfor arbitrary values of the RF nutation frequency ω₁= γB₁and the quadrupolar frequency ω_Q. In the case of single crystals both the true echo term of this expression and its induction-signal-like terms are important as shown by experiments on¹⁴N nuclei in NH₄ClO₄crystal. Conditions for obtaining the maximal echo in powder samples are presented. A very lowB₁field together with long RF pulses may distort even the central part of the spectrum, resulting in strange looking apparent spectra.     

Structural transitions in ice samples at low temperatures and pressures

The structure of ice samples formed in the decay of a water impurity gel at temperatures above 4 K and atmospheric pressure has been examined. The X-ray diffraction analysis indicates that three phases coexist in the initial sample at temperatures of 85–110 K. These phases are amorphous ice occupying up to 30% of the sample volume, cubic-phase ice I _c metastable at low pressures (∼60%), and normal hexagonal ice I _h (≤6%). The characteristic sizes of crystals of the cubic and hexagonal phases are about 6 and 30 nm, respectively. The amorphous phase at annealing above 110 K is gradually transformed to the crystalline phase both cubic and hexagonal. This transition is accompanied by two processes, including a fast increase in the sizes of cubicphase nanocrystals and the partial transition of the cubic phase I _c to the hexagonal one I _h. Hexagonal ice I _h prevails in the bulk of the sample above 200 K.     

Anomalies in the scattering of gamma-rays from single crystals of HF-doped ice-I h around 100 K

Using the high energy resolution of the Mössbauer effect, the elastic and inelastic scattering of gamma-rays from single crystals of HF-doped IceI _h has been distinguished. The crystals were studied in the region of 100 K, since measurements by previous workers have suggested the possibility of an order-disorder transition at this temperature. Marked anomalies in the scattered intensity were observed between 106 and 125 K, and these were shown to depend on the thermal history of the crystals.     

Crystal growth and characterization of CsSr1–xEux I3 high light yield scintillators

In this work, we report on single crystal growth and characterizations of a new scintillation material: CsSr_1–xEu_x I₃ (0 ≤ x ≤ 1). Single crystals of CsSr_0.99Eu_0.01I₃, CsSr_0.92Eu_0.08I₃ and CsEuI₃ were grown via the Vertical Gradient Freeze method. The crystals exhibit good crystal quality, high light yield, and excellent energy resolution. Initial results show that the scintillation light yield of our CsSr_0.92Eu_0.08I₃ crystal is ～65,000 ph/MeV with 5.9% energy resolution at 662 keV. (© 2011 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Dimensional crossover in a BiSrCaCuO single crystal vibrating reed experiment

With the vibrating reed technique we have measured the depinning lines (DLs) of vortices in Bi₂Sr₂CaCu₂O₈ and Y(6%Gd)Ba₂Cu₃O_6.83 single crystals for magnetic fields parallel to the [CuO₂] planes. The DLs of the two compounds have similar slopes for reduced temperaturest>0.98 and magnetic fieldsB<0.1 T. AtB0.1 T we observe a pronounced change in the slope of the DL of the Bi₂Sr₂CaCu₂O₈ sample which may indicate a crossover from a three to a two dimensional superconductor.     

Ionic photoconductivity of RbAg4I5 superionic crystals

A new effect of illumination on ionic conductivity and activation energy of migration of mobile Ag⁺ cations in RbAg₄I₅ superionic crystals has been detected and studied. Reversible changes in the ionic conductivity due to illumination of superionic crystals are caused by reversible changes in the structure of electronic centers caused by elastic strain around these centers. The effect of elastic deformation on the process of ionic transport and activation energy for diffusion of mobile silver cations has been studied. Photostimulated recovery of the ionic conductivity after its change due to preliminary illumination of a RbAg₄I₅ superionic crystal with light of wavelength λ≃430 nm has been detected. This recovery of the ionic conductivity is due to excitation of centers in complexes generated by previous illumination of tested samples. Zh. éksp. Teor. Fiz. 112, 698–706 (August 1997)     

Oscillation of nonvolatile holographic recording in LiNbO3:Fe:Cu crystals

The oscillation of diffraction efficiency is observed in the nonvolatile holographic recording of lithium niobate crystals doped with iron and copper. The physics of oscillation in doubly doped lithium niobate crystals is studied by using Runge–Kutta methods, and the oscillation can be attributed to the redistribution of electrons in the deeper and shallower traps of the crystals in the initial phase of holographic recording. The effects of Fe concentration and intensity ratio of red beams to UV beam (I_R/I_UV) on the oscillation are investigated theoretically. The results show that with lower Fe concentration, the amplitude of oscillation is larger and with lower intensity ratio I_R/I_UV, the duration of the oscillation is longer.     

Thermoluminescence studies on Cu-doped Li2B4O7 single crystals

Lithium tetraborate (Li₂B₄O₇) is a tissue equivalent material and single crystals of this material doped with Cu are promising for dosimetric applications. In the present study highly transparent single crystals of lithium tetraborate (Li₂B₄O₇) doped with Cu (0.5 wt%) have been grown using the Czochralski technique. The Li₂B₄O₇:Cu crystals were studied using photoluminescence, X-ray diffraction (XRD), UV-vis transmission, time resolved fluorescence and thermoluminescence (TL) techniques. The TL readout of Li₂B₄O₇:Cu crystals showed two well-defined glow peaks at 402 K (peak-1) and 513 K (peak-2) for a 4 K/s heating rate. While the low temperature TL peak-1 fades completely within 24 h at room temperatures, the main dosimetric peak-2 remains the same. The TL sensitivity of the grown single crystal is found to be 3.3 times that of a conventional TL phosphor, TLD-100. The Li₂B₄O₇:Cu crystals showed a linear TL dose-response in the range from 1 mGy to 1 kGy. The TL analysis using a variable dose method revealed first order kinetics for both the peaks. Trap depth and frequency factor for peak-1 were found to be 0.81 eV and 5.2×10⁹ s⁻¹, whereas for peak-2 the values were 1.7 eV and 1.7×10¹⁶ s⁻¹, respectively.     

X-ray dosimetric characteristics of CdIn2S4〈Cu〉 single crystals

The effect of doping CdIn₂S₄ single crystals by copper (3 mol %) on their X-ray dosimetric characteristics is investigated. It is found that the characteristic X-ray conductivity of CdIn₂S₄〈Cu〉 single crystals increases 3–16 times compared with undoped CdIn₂S₄ at effective radiation hardness V _a = 25−50 keV and dose rate E = 0.75−78.05 R/min. Moreover, the persistence of the crystal characteristics completely disappears and the supply voltage of a CdIn₂S₄〈Cu〉 X-ray detector decreases fivefold. The dependence of the steady X-ray-induced current in CdIn₂S₄〈Cu〉 on the X-ray dose is described as ΔI _{E, 0} ∝ E ^α, where 0.6 ≤ α ≤ 1.8.     

Swift heavy ions-induced degradation on the electrical characteristics of silicon NPN power transistors

ABSTRACT

The pre- and post-irradiation effects on the DC electrical characteristics of 100?MeV Phosphorous (P⁷⁺) and 80?MeV Nitrogen (N⁶⁺) ion-irradiated NPN transistors were studied in the dose range from 600?krad (Si) to 100?Mrad (Si). The different electrical characteristics, such as Gummel characteristics, excess base current (ΔI_B?=?I_B-Post?–?I_B-Pre), current gain (h_FE), damage constant (K) and output characteristics, were measured in situ after ion irradiation. The considerable increase in the base current (I_B) at lower V_BE and slight decrease in the collector current (I_C) at higher V_BE were observed after ion irradiation. The C–V measurements revealed that the doping concentration (N_d) was found decreased, while the built-in potential (V_bi) increased after irradiation. The ion-irradiated results are compared with ⁶⁰Co gamma-irradiated results in the same dose range. The SRIM simulation was performed to understand the range of ions and energy loss in the transistor structure. The SRIM simulation showed that 100?MeV P⁷⁺ and 80?MeV N⁶⁺ ions can easily pass through the active region of transistors by creating ionization and displacement damages in the device structure. The irradiation results showed that ions induce more degradation in the electrical characteristics when compared to ⁶⁰Co gamma radiation at the same dose range.     

Analogous study in low magnetic field between Cu–Ge and Cu–Si ferrites

Two series of mixed copper ferrites, Cu_1+x Ge_x Fe_2−2x O₄ and Cu_1+x Si_x Fe_2−2x O₄, have been analogously investigated for x=0.0, 0.05, 0.1, 0.15, 0.2, 0.25 and 0.3. The two systems were prepared using the standard ceramic techniques. X-ray diffraction analysis indicates that both systems formed in a single phase cubic spinel structure. The lattice parameter has a constant value (0.838 nm±0.001) for the two series. The grain diameter was estimated from the scanning electron microscope micrographs for the two series. Some magnetic properties were measured at room temperature. The magnetization M was measured in the range of magnetizing field up to 5500 Am⁻¹. The relative permeability (μ_r) was calculated from the B–H relation. The B–H loops were measured at constant magnetizing current (I=2.5 A which is equivalent to 900 Am⁻¹). Also, the hystersis area and the magnetic parameters B_r, B_s, m_R (B_r/B_s) and apparent energy loss (E) were estimated from the B–H loops; μ_r, B_r, B_s and E are composition dependent.     

Plasticization effect and the excitation of the electronic subsystem in an LiF single crystal by an ultraweak thermalized-neutron flux in the stress-relaxation regime

Plasticization is detected during stress relaxation in uniaxially loaded LiF single crystals irradiated with an ultraweak flux of thermalized neutrons (UFTN) with intensity I _n∼100 neutrons/cm²s. It is shown that when loaded LiF samples are irradiated with an UFTN, excitation of the electronic subsystem of the crystal is observed and is manifested in a stimulation of deformation exoemission of electrons and the generation of F centers. Pis’ma Zh. éksp. Teor. Fiz. 70, No. 2, 118–123 (25 July 1999)     

Investigation of the nuclear indirect interaction by NMR line shape analysis of single crystal molybdenum

NMR signals of⁹⁵Mo and⁹⁷Mo were determined on single crystals of molybdenum. Their absorptive parts were analysed providing information about the indirect spin-spin interaction in spite of the quadrupole interaction. For the indirect exchange interaction the analysis yields |A _ij |=100Hz±5%. An estimation of the upper limit of the indirect dipole-dipole interaction leads to |B _ij |<15 Hz.     

An automated laboratory EXAFS spectrometer of Johansson type: indigenous development and testing

An automated linear laboratory EXAFS spectrometer of the Johansson type has been indigenously developed. Only two translational motions are required to achieve the necessary Rowland circle configuration for the (fixed) X-ray source, the dispersing and focusing bent crystal and the receiving slit. With the available crystals the spectral region from 5 to 25 keV can be scanned. The linear motions of the crystal and receiving slit including the detector assembly are achieved by employing software-controlled DC motors and utilizing optical encoders for position sensing. The appropriate rotation of the crystal is achieved by the geometry of the instrument. There is a facility to place the sample alternately in the path of the X-ray beam and out of the path to record both the incident X-ray intensityI ₀ and the transmitted intensityI employing the scintillation detector. An arrangement with a two-window proportional detector before the sample to measureI ₀ and the scintillation detector to recordI is also developed; in this case it is not necessary to oscillate the sample. Fast electronic circuits are employed to minimize counting errors. The instrument is user-friendly and it is operated through a menu-driven IBM compatible PC. EXAFS spectra of high resolution have been recorded using the spectrometer and employing the Si(111) reflecting planes; the X-ray source being a Rigaku 12 kW rotating anode with Cu target. We describe the spectrometer and discuss its performance with a few representative spectra.