Optical properties of porous silicon

We have measured the absorption spectra and the dispersion of refractive index for porous silicon samples with different porosities in the energy range 1.5–3.5 eV at room temperatures. The experimental data are compared with the dependences calculated by using Bruggeman’s theory for the dielectric constant of a multicomponent system composed of crystal silicon, SiO₂, amorphous silicon, and voids (pores). The best agreement between the experimental and theoretical dependences is achieved for a significant percentage of SiO₂ in the porous silicon samples.     

C+离子注入Si单晶形成SiC埋层中Si2p的特征能量损失谱

利用metal vapor vacuum arc离子源产生的C⁺离子，注入单晶Si衬底，得到了SiC埋层.利用X射线光电子能谱，研究了SiC埋层中Si2p的特征能量损失谱.结果表明：Si2p的特征能量损失谱依赖于SiC埋层中C原子的浓度分布，并且与SiC埋层的有序度对应. 关键词：     

Complex refractive index and phosphorus concentration profiles in P+31 ion implanted silicon by ellipsometry and auger electron spectroscopy

Ellipsometrically measured complex retractive index profiles in high energy P⁺₃₁ ion implanted silicon have been compared with the phosphorus concentration profiles determined by in-depth profiling of the implanted surface using Auger electron spectroscopy in conjunction with in-situ ion sputtering. Structure was observed in the phosphorus profile which corresponds to structure in the complex refractive index profiles of unannealed specimens. This implies that the complex refractive index profile of the unannealed surface is sensitive to the concentration of the implanted species as well as the amount of structural disorder in the implanted layer. These results also indicate that the implanted phosphorus tends to build up in the more highly damaged regions, possibly through a radiation enhanced self-diffusion mechanism.     

Dosimetry techniques

The formation and annealing of defects in ion implanted silicon dioxide layers and in connection with them the refractive index change are of high interest for the production of electronic and integrated optical devices.

Several studies have shown that the ion implantation in fused silica leads to a compaction of the material and in consequence to an increasing of the refractive index.^1–6 On the other hand the defect formation in crystalline quartz is connected with a decreasing of the refractive index up to nearly the same value for ion implanted quartz and fused silica layers in the high dose region.^1,5 On the base of this effects optical waveguides had been produced by ion implantation in both material.^2,7–12 However, the nature of the mechanisms responsible for the defect formation and for the changes of the optical properties are not well understood.

This paper reports on the ion dose and annealing temperature dependence of several defects in connection with the refractive index change.     

Energy gap and optical dielectric constant of Pb1−xCdxSe films

The transmission spectra of laser-deposited Pb_1−xCd_xSe films (x = 0, 0.02, 0.05, 0.08 and 0.12) have been measured over the energy range 0.1–0.65 eV at two different temperatures 90 and 300 K. From these spectra the dispersion of the refractive index and the absorption coefficient-energy dependence have been obtained. Thus the dependences of the gap and the optical dielectric constant on the Cd content x have been investigated. The experimental results have been discussed in the framework of the recently developed theoretical model by Volkov and Pankratov et al^1,2.     

Synthesis and characterization of porous silicon layers for 1D photonic crystal application

In this paper, we studied the optical and physical properties of electrochemically prepared porous silicon layers. The atomic force microscopy analysis showed that the etching depth, pore diameter and surface roughness increase as the etching time increased from 30 to 50 mA/cm². By tuning two current densities J₁ = 50 mA/cm² and J₂ = 30 mA/cm², two samples of 1D porous silicon photonic crystals were fabricated. The layered structure of 1D photonic crystals has been confirmed by scanning electron microscopy measurement which showed white and black strips of two distinct refractive index layers. Finally, the measured reflectance spectra of 1D porous silicon photonic crystals were compared with simulated results.     

Optical parameters of epitaxial GaN thin film on Si substrate from the reflection spectrum

A method has been proposed for determining the optical properties of a thin film layer on absorbing substrates. The film optical parameters such as thickness, refractive index, absorption coefficient, extinction coefficient and the optical energy gap of an absorbing film are retrieved from the interference fringes of the reflection spectrum at normal incidence. The envelopes of the maxima of the spectrum E_M and of the minima E_m are introduced in analytical forms to find the reflectance amplitudes at the interfaces and approximate values of the thin film refractive index. Then, the interference orders and film thickness are calculated to get accurate values of the needed optical parameters. There are no complex fitting procedures or assumed theoretical refractive index dispersion relations. The method is applied to calculate the optical properties of an epitaxial gallium nitride thin film on a silicon (1 1 1) substrate. Good agreement between our results and the published data are obtained.     

Photoluminescence properties of core-shell SiO2/Lu2O3: Eu monodisperse heteronanoparticles

Core-shell monodisperse heteroparticles of the composition SiO₂/Lu_1.86Eu_0.14O₃ have been synthesized using the developed technique for preparing spherical colloidal silicon dioxide particles with the size dispersion in the range 2.0–2.5% and the procedure for producing nanocoatings on the surface of spheres by codeposition. The structure of heteroparticles has been investigated, their excitation and photoluminescence spectra have been analyzed, and the lifetime of the ⁵ D ₀ excited state of Eu³⁺ ions has been examined. It has been revealed that the luminescence decay time for heteroparticles increases by a factor of approximately two compared to that for a powdered luminophor Lu₂O₃: Eu (7 at %) prepared and treated under the same temperature conditions as the SiO₂/Lu₂O₃: Eu (7 at %) heteroparticles. This effect has been attributed to the change in the effective refractive index and the local density of photon states in luminophor nanolayers of heteroparticles.     

Ion synthesis and optical properties of gold nanoparticles in an Al2O3 matrix

Single-crystal Al₂O₃(0001) and Al₂O₃(1120) substrates are implanted by 160-keV Au⁺ ions with doses from 10¹⁵ to 10¹⁷ cm^?2. Some of the implanted samples are air-annealed at 800–1200°C. The properties of the synthesized composite layers are studied by Rutherford backscattering and linear optical reflection measurements, and their nonlinear optical characteristics are examined by RZ-scanning using a picosecond Nd: YAG laser operating at a wavelength of 1064 nm. The Rutherford backscattering spectra indicate that the implanted impurity concentrates near the surface of the Al₂O₃. The formation of gold nanoparticles in the Al₂O₃ can be judged from the characteristic optical plasmon resonance band in the reflectance spectra of the samples irradiated to a dose higher than 6.0 × 10¹⁶ cm^?2. The synthesized particles are shown to be responsible for nonlinear optical refraction in the samples. The nonlinear refractive index, n ₂, and the real part of the third-order susceptibility, Rex⁽³⁾, of the composite layers are determined.     

Determination of migration of ion-implanted Ar and Zn in silica by backscattering spectrometry

It is well known that the refractive indices of lots of materials can be modified by ion implantation, which is important for waveguide fabrication. In this work the effect of Ar and Zn ion implantation on silica layers was investigated by Rutherford Backscattering Spectrometry (RBS) and Spectroscopic Ellipsometry (SE). Silica layers produced by chemical vapour deposition technique on single crystal silicon wafers were implanted by Ar and Zn ions with a fluence of 1–2?×10¹⁶ Ar/cm² and 2.5?×10¹⁶ Zn/cm², respectively. The refractive indices of the implanted silica layers before and after annealing at 300°C and 600°C were determined by SE. The migration of the implanted element was studied by real-time RBS up to 500°C. It was found that the implanted Ar escapes from the sample at 300°C. Although the refractive indices of the Ar-implanted silica layers were increased compared to the as-grown samples, after the annealing this increase in the refractive indices vanished. In case of the Zn-implanted silica layer both the distribution of the Zn and the change in the refractive indices were found to be stable. Zn implantation seems to be an ideal choice for producing waveguides.     

Luminescence and structure of nanosized inclusions formed in SiO2 layers under double implantation of silicon and carbon ions

Luminescent and structural characteristics of SiO₂ layers exposed to double implantation by Si⁺ and C⁺ ions in order to synthesize nanosized silicon carbide inclusions have been investigated by the photoluminescence, electron spin resonance, transmission electron microscopy, and electron spectroscopy methods. It is shown that the irradiation of SiO₂ layers containing preliminary synthesized silicon nanocrystals by carbon ions is accompanied by quenching the nanocrystal-related photoluminescence at 700–750 nm and by the enhancement of light emission from oxygen-deficient centers in oxide in the range of 350–700 nm. Subsequent annealing at 1000 or 1100°C results in the healing of defects and, correspondingly, in the weakening of the related photoluminescence peaks and also recovers in part the photoluminescence of silicon nanocrystals if the carbon dose is less than the silicon dose and results in the intensive white luminescence if the carbon and silicon doses are equal. This luminescence is characterized by three bands at ～400, ～500, and ～625 nm, which are related to the SiC, C, and Si phase inclusions, respectively. The presence of these phases has been confirmed by electron spectroscopy, the carbon precipitates have the sp ³ bond hybridization. The nanosized amorphous inclusions in the Si⁺ + C⁺ implanted and annealed SiO₂ layer have been revealed by high-resolution transmission electron microscopy.     

Optical properties of erbium-doped porous silicon waveguides

Planar and buried channel porous silicon waveguides (WG) were prepared from p⁺-type silicon substrate by a two-step anodization process. Erbium ions were incorporated into pores of the porous silicon layers by an electrochemical method using ErCl₃-saturated solution. Erbium concentration of around 10²⁰ at/cm³ was determined by energy-dispersive X-ray analysis performed on SEM cross-section. The luminescence properties of erbium ions in the IR range were determined and a luminescence time decay of 420 μs was measured. Optical losses were studied on these WG. The increased losses after doping were discussed.     

Optical waveguide with homogeneous refractive index profile in LiNbO3 by double-low-energy Oxygen ion implantation

We report on the formation of the planar waveguide by 550 keV O ion followed by 250 keV O ion implantation in lithium niobate (LiNbO₃), at fluences of 6 × 10¹⁴ ions/cm² and 3 × 10¹⁴ ions/cm², respectively. The Rutherford backscattering/channeling spectra have shown the atomic displacements in the damage region before and after annealing. A broad and nearly homogeneous damage layer has been formed by double-energy ion implantation after annealing. Both the dark mode spectra and the data of refractive index profile verified that the extraordinary refractive index was enhanced in the ion implanted region of LiNbO₃. A homogeneous near-field intensity profile was obtained by double-low-energy ion implantation. There is a reasonable agreement between the simulated modal intensity profile and the experimental data. The estimated propagation loss is about 0.5 dB/cm.     

Determination of the complex refractive index profiles in P+31 ion implanted silicon by ellipsometry

Ellipsometry was used to determine the complex refractive index profiles in silicon implanted with P⁺₃₁ ions with energies of 35, 52,5 and 70 keV. The profiles were determined both by anodization-stripping of the implanted layer and by numerical fitting of multiple-angle-of-incidence ellipsometer data taken on the as-implanted surface, assuming that the implantation would exhibit a Gaussian distribution. Good correlation was obtained between the two types of profiles, indicating that the non-destructive measurements on the as-implanted surface may be useful in process control. Good agreement with published results was also obtained on the increase in depth with energy of both the damage and the implanted species.     

离子注入Si损伤分布的光谱法多层分析

应用多层模型和最优化方法,由实验测得的离子注入Si的椭偏光谱以及单晶Si和离子注入非晶Si的光学常数,能分析离子注入Si的损伤分布。我们测量了2.1—4.6eV能量范围的椭偏光谱和光学常数,建立了多层计算模型和最优化方法。在模拟分析的基础上,计算了能量为40keV,剂量分别为4×10¹³和1.4×10¹⁴cm^-2的As⁺注入Si的损伤分布,并与背散射测量的结果比较。用多层模型和最优化方法也能从光谱分析其它物理量的分布,只要这些物理量对光学性质有显著的影响,并且在测量过程中不随光子能量而改变。 关键词：     

金属有机分解法制备的SrTiO3薄膜的光学特性

采用金属有机分解法（MOD）在石英衬底上沉积了SrTiO3薄膜。所制备的薄膜是晶格常数为a=b=c=3.90?的多晶结构。通过测量190—1100nm波段内的透射光谱，采用包络方法计算了薄膜的光学常数（折射率n和消光系数k）。结果表明，采用MOD方法制备的薄膜的折射率大于采用射频磁控溅射、溶胶—凝胶和化学气相沉积方法制备的薄膜的折射率；薄膜的折射率色散关系满足单振子模型，其中振子强度S0为0.88′1014m-2，振子能量E0为6.40eV；薄膜的禁带宽度为3.68eV。     

Chemical and phase compositions of silicon oxide films with nanocrystals prepared by carbon ion implantation

The chemical and phase compositions of silicon oxide films with self-assembled nanoclusters prepared by ion implantation of carbon into SiO _x (x < 2) suboxide films with subsequent annealing in a nitrogen atmosphere have been investigated using X-ray photoelectron spectroscopy in combination with depth profiling by ion sputtering. It has been found that the relative concentration of oxygen in the maximum of the distribution of implanted carbon atoms is decreased, whereas the relative concentration of silicon remains almost identical over the depth in the layer containing the implanted carbon. The in-depth distributions of carbon and silicon in different chemical states have been determined. In the regions adjacent to the layer with a maximum carbon content, the annealing results in the formation of silicon oxide layers, which are close in composition to SiO₂ and contain silicon nanocrystals, whereas the implanted layer, in addition to the SiO₂ phase, contains silicon oxide species Si²⁺ and Si³⁺ with stoichiometric formulas SiO and Si₂O₃, respectively. The film contains carbon in the form of SiC and elemental carbon phases. The lower limit of the average size of silicon nanoclusters has been estimated as ∼2 nm. The photoluminescence spectra of the films have been interpreted using the obtained results.     

Blue-cathodoluminescent layers synthesis by high-dose N, C and B SiO2 implantation

Thermal silicon oxide layers have been implanted at 600 °C with N⁺+C⁺, N⁺+B⁺ and N⁺+C⁺+B⁺ ions. Two different implantation doses have been chosen in order to introduce peak concentrations at the projected range comparable to the SiO₂ density. Some pieces of the samples have been annealed in conventional furnace at 1200 °C for 3 h. After annealing, cathodoluminescence measurements show in all cases a main broad band centered at 460 nm (2.7 eV). High doses of C implantation give rise to an intensity attenuation. Phases formed in the oxides have been investigated by Fourier transform infrared spectroscopy before and after annealing. The spectra suggest that N incorporates as BN and probably as a ternary BCN phase in the triply implanted samples, while C seems to bond mainly with B. Boron is also bonded to O in B-O-Si configuration. Depth structure and quantitative composition of the films were deduced from fittings of the spectroscopic ellipsometry measurements.     

Synthesis and optical properties for crystals of a novel organic semiconductor [ Ni(Cl) 2{(Ph 2P) 2CHC(R 1R 2)NHNH 2}]

In this investigation, the synthesis process of the apyrazole derivative for diphenylphosphino-methane hydrazine complexes [ Ni(Cl)₂{(Ph₂P)₂CHC(R₁R₂)NHNH₂}] was reported, and the obtained crystals were analyzed by X-ray diffraction. As a result of the growth process, a set of complexes were formed. The structures of these complexes are discussed on the basis of Elemental analysis (EA), IR, ¹H-NMR, ³¹P-NMR spectroscopic data and FAB mass spectra. The compound under investigation shows typical semiconductor behavior as a result of delocalization of the π-electrons in the structure. The reflectance and transmittance spectra for the crystals were measured and analyzed in the incident photon energy range 1.29 to 3.93 eV and in the temperature range 77 to 300 K. The optical study revealed that the optical transition is direct allowed. Below the absorption edge, the refractive index as a function of wavelength was determined in the low energy region of the used incident photon energy range. From the refractive index-wavelength variations, the oscillator and dispersion energies of the refractive index for the obtained crystals were determined. The static refractive index and static dielectric constant were evaluated.     

Some studies of BF2 and B+F implanted Silicon

Ion-implanted shallow junctions have been investigated using BE₂ (molecular ions) by the anodic oxidation method coupled with a four-point probe technique. BF₂ ions were implanted through screen oxide at doses of 3–5 × 10¹⁵ ions/cm² and energies of 25 and 45 keV which is equivalent to 5.6 keV and 10 keV of boron ions. The effect of energy, dose and annealing temperature on shallow junctions is presented in this paper. The shallow junctions in the range of 0.19 μm to 0.47 μm were fabricated.

The effect of fluorine on sheet resistivity of boron implanted silicon at various doses, treated with two-step and three-step annealing, is also presented for comparison in the paper.