Annealing of radiation damage in graphite

Abstract

The electronic stopping of heavy ions with 7 ≤ Z, ≤ 54 in low-index directions of thin gold single crystals is measured in the energy range 200 keV ≤ E ≤ 1100 keV. Large oscillations in electronic stopping power are observed for constant ion velocity. The stopping powers of different low-index directions are compared.     

铪离子等离子体源离子注入铜基体的数值模拟

通过SRIM软件对铪离子等离子体源离子注入铜进行了模拟。模拟了铪离子注入铜的核阻止本领、电子阻止本领、入射深度随能量的变化,以及在不同注入条件下铪离子的摩尔浓度分布,并对模拟结果进行了分析。结果显示:能量低于6 MeV时核阻止本领占主导地位,高于6 MeV时电子阻止本领成为主要的能量损失,并且离子注入过程中会出现能量沉积的Bragg峰和质量沉积区域较集中的现象,入射深度随能量的增加而增加。     

The effect of different ion stopping models on calculated parameters of the radiation damage of materials

Direct numerical solution of the Boltzman transport equation for incident ions and knocked-off atoms of the target is applied for range and damage calculations. The influence of physical parameters in a model of ion stopping in matter on the obtained range and damage distribution is investigated in the range of ion energies from 1 KeV to 1 MeV. All the examined interatomic potentials give close values of mean depths and higher moments of range and damage distributions. The influence of differences in electronic stopping is also studied. The obtained results are compared with experimental data and the results of other calculations.     

Ranges and standard deviations of implanted ions

This paper presents a theoretical analysis and simple expressions for the calculation of ranges and standard deviations of implanted ions in amorphous targets. Nuclear energy loss models are discussed to introduce an approximation formula for the nuclear stopping cross section appropriate for Thomas-Fermi, Lenz-Jensen and intermediate type potentials. The Firsov electronic stopping model has been used to show its successful application. Algebraical expressions for the total range of ions in monoatomic and biatomic targets as a function of ion energy result from the considerations presented. A quasi-elastic multiscattering model is suggested, which permits an easy estimate of projected ion ranges. The standard range deviation is obtained by determining the total average-square energy loss fluctuations. Finally a comparison of calculated and experimental results is made to show that calculations based on the Firsov electronic stopping model and the nuclear stopping cross section proposed here provide a better agreement with the experimental results than the wellknown Johnson-Gibbons LSS-calculations.     

ESR of residual defects in silicon from recoil implantation of oxygen in Si/SiO2 systems

In ionic crystals or other insulators with partial ionic binding, the ion-target interaction differs from that of neutral atoms due to different electronic distributions and overall electrical charges Consequently, the nuclear stopping power and defect production by recoiling atoms will deviate from standard values, obtained from e g Moliere-potentials In the present paper, realistic potentials between projectile ion and target ion are determined by the free electron gas model of overlapping Hartree-Fock-Slater or Lenz-Jensen ions (and neutral atoms for comparison) With the new potentials, the transferred energies T and the range of interaction is determined for either damage production (T>E_d) and for nuclear stopping (T>hω> for bound ions) In addition the excitation of optical phonons is taken into account which are excited by the transient electrical field of the charged projectile     

Assessment of damage ranges by measurements of the refractive index in ion implanted LiNbO3 and LiTaO3

Ion implantation in LiNbO₃ and LiTaO₃ produces radiation damage by nuclear collisions. The amorphisation of the lattice reduces the refractive index of the material. In the case of fast ion bombardment with helium this damage layer is buried below the surface. The refractive index profile which then exists is suitable for an optical waveguide on the surface which supports several modes. Analysis of the refractive index profile yields the damage distribution in the crystal and this in turn can be compared with theoretical estimates of the damage production and ion ranges.

Our analyses show that in the high energy range from 0.5 to 2.0 MeV the depth of the damage is predominantly controlled by the electronic stopping.     

快重离子辐照金红石型TiO2的肿胀效应及化学蚀刻行为研究

二氧化钛（Titatium Dioxide,简称TiO₂）晶体在中能重离子辐照时表面会出现肿胀效应, 肿胀高度与入射离子的电子能损和辐照注量有关。 辐照后的TiO₂在一定条件下能够被氢氟酸溶液化学蚀刻,化学蚀刻的电子能损阈值为8.2keV/nm,未辐照TiO₂呈现几乎零蚀刻率。要达到饱和蚀刻深度,辐照离子的注量必须大于或等于1×1013ions/cm2。采用离子辐照的潜径迹理论分析研究了辐照损伤及对化学蚀刻的影响, 快重离子辐照结合化学蚀刻是制备TiO₂微结构的有效方法。 There appears volume swelling on the surface of the irradiated rutile TiO₂ crystal and the volume swelling is affected by the ion fluence and the electronic stopping power. To induce adequate irradiation damage for the chemical etching, the irradiation parameters must fulfill some requirement. There is minimum electronic stopping power for the chemical etching of the irradiated region in TiO₂ crystal, which is about 8. 2 keV/nm. If the ion fluence is below 1×1013ions/cm2, the saturated etching depth of the irradiated region in TiO₂crystal cannot be reached. The irradiation damage based on latent track formation frame and the theoretical linkage to the etching technique is investigated. It is hopeful to fabricate micro and nano scale structurce in rutile TiO₂ crystal by using the ion irradiation and chemical etching technique.      

重离子束在热靶中的电子阻止本领与有效电荷数

采用线性介电响应理论,研究了重离子束在热靶中的有效电荷数和电子阻止本领。为了考虑入射离子的束缚电荷分布,我们将Brandt-Kitagawa的有效电荷理论推广到热靶。在低速和高速情况下,分别得到了有效电荷数和电子阻止本领的解析表示式。数值结果表明,对于低速离子,有效电荷数随电子气的温度增加而增加;在一定的温度范围内,低速离子的阻止本领与冷靶相比有明显增加。对于高速离子,我们的理论结果与实验值符合得较好。 关键词：     

STM and AFM observations of damage produced by swift Ne and Kr ions in graphite

Radiation damage of highly oriented pyrolitic graphite (HOPG) samples have been investigated following irradiation with 215 MeV Ne and 209 MeV Kr ions, available at U-400 cyclotron, Dubna. A freshly cleaved HOPG surface was irradiated perpendicularly to the sample surface (c plane). A low ion irradiation dose was used (10¹² ions/cm²) in order to avoid damage overlap. Scanning tunneling microscopy (STM) and atomic force microscopy (AFM) are useful methods allowing direct observation of surface defects. The observations were made after irradiation without any further sample preparation. The experimental results are compared to computer simulations (TRIM code) and primary knonked-on atomic spectrum calculations (LET code). Clear distinction can be made between surface features attributed to nuclear stopping effects and defects owing to electronic stopping mechanisms.     

Range and range straggling of oxygen implanted into silicon at energies between 2 and 20 MeV

Oxygen profiles in silicon implanted with energies between 2 and 20 MeV by means of a Tandem accelerator have been investigated with a microprobe after bevelling the sample surface. It is shown that the measured profiles correspond to the implantation profiles when the microprobe is operated with a well focussed 2 keV electron beam. The projected ion ranges and the profiles thus obtained are compared with theoretical profiles which have been calculated by a Monte Carlo simulation of the stopping procedure. Takingk=1.30k _LSS for the electronic stopping coefficient in the LSS region up to 2.55 MeV and a constant value of 162 eV/Å for the electronic stopping at higher energies the calculation yields satisfactory range estimates, whereas the range straggling is systematically too small up to 13% in comparison with the experimental results.     

微通道板离子壁垒膜及其对入射离子的阻止作用

给出了三代微光像管中微通道板离子壁垒膜对入射正离子阻止作用的描述,引进了核阻止本领、电子阻止本领和平均射程的概念。结合Tomas-Fermi屏蔽势进行了分析讨论和Monte-Carlo模拟计算,给出Al₂O₃和SiO₂薄膜对不同能量垂直入射时的核、电子阻止的定量结果。得出了Al₂O₃薄膜阻止本领比SiO₂阻止本领高的结论。证实了选用Al₂O₃离子壁垒膜的科学性和可行性。     

25 MeV/u Kr辐照下PET薄膜的损伤机制研究

通过25 MeV/u 86 Kr离子辐照叠层结晶聚对苯二甲酸乙二醇酯膜（PET）, 在不同的电子能损（3.40-7.25 keV/nm）和离子注量(5×1011----3×1012 ions/cm2)辐照条件下, 对Kr离子在PET中引起的辐照损伤效应进行了研究。借助傅里叶变换红外光谱分析,通过对样品的红外吸收峰进行扣除基底后的Lorentz拟合,分析了与主要官能团对应的吸收峰强度的变化趋势, 研究了化学结构与组分在重离子辐照下的变化规律; 利用X射线衍射光谱仪测量, 研究了Kr离子在PET潜径迹中引起的非晶化过程,并通过对吸光度和非晶化强度随离子注量的指数衰减规律的分析, 获得了不同电子能损离子辐照PET时主要官能团的损伤截面和非晶化截面及对应的潜径迹半径。 At room temperature, polyethylene terephthalate(PET) foil stacks were irradiated by 25 MeV/u Kr ions in the electronic stopping power range(3.3--7.66 keV/nm) and the fluence range from 5×1011 to 3×1012 ions/cm2. The behaviour of the main function groups with fluence and electronic stopping power were studied by using Fourier transform infrared(FTIR) spectroscopy, the degradation of the function group was investigated with the Lorentz fitting subtracted baseline. The amorphous processes in the latent tracks of PET were studied by X ray diffraction(XRD) measurements. The Kr ion induced degradation cross section and amorphisation cross sections(radii) for different electronic energy loss were acquired from the experimental data(FT IR and XRD) by exponential decay function respectively.      

快重离子辐照聚酰亚胺潜径迹的电子能损效应

快重离子辐照聚合物材料时，由于密集电离激发在其路径上产生几纳米直径的潜径迹，径迹形貌受离子种类、离子能量等多种因素的影响.为了研究电子能损对径迹形成所起的作用，利用1.158GeV 的Fe⁵⁶离子和 1.755GeV Xe¹³⁶离子在室温真空环境下辐照叠层聚酰亚胺(PI)薄膜，结合傅里叶转换红外光谱(FTIR)分析技术对辐照引起的化学变化进行了测量.聚酰亚胺官能团的降解及炔基的生成是离子辐照聚合物的主要特征，在注量1×10¹¹到6×10¹²/cm²范围及较宽的电子能损(dE/dX)_e范围 (Fe⁵⁶ 离子：2.2 到 5.2 keV/nm， Xe¹³⁶ 离子：8.6 到 11.3 keV/nm)对官能团的断键率及炔基生成率进行了研究. 红外结果显示在实验涉及的能损范围都有炔基生成，应用径迹饱和模型对实验结果进行拟合，不同能损下的平均损伤径迹半径及炔基生成径迹半径被得到，通过热峰模型对实验结果拟合，给出了离子在聚酰亚胺中产生潜径迹的能损阈值，实验给出的径迹形貌的电子能损效应曲线与热峰模型预言走势基本一致. 关键词： 离子辐照 潜径迹 红外光谱 热峰模型     

Application of the Boltzmann transport equation to calculations of flux and range distributions of energetic ions

An approximation method for calculating a flux and range distributions of energetic ions in a layer of matter is presented. Used successively for every layer of a medium, approximation equations describe the ion motion in the electronic stopping region.     

高能铁离子在水介质中核反应过程所导致的能量沉积

在银河宇宙射线中,400MeV/nucleon的铁离子通量相对来讲是较高的,400MeV/nucleon的铁离子对空间辐射引起的损伤和辐射剂量有重要的贡献.本文以Geant4为基础,对400MeV/nucleon Fe离子与物质相互作用后通过核反应过程产生的次级碎片进行模拟分析.对铁离子在水中产生的能量沉积和铁离子与水介质发生核反应后产生的次级碎片的能量沉积进行了模拟研究,得到了通过核反应过程产生次级粒子所导致的剂量贡献. 关键词： 能量沉积 剂量 碎片     

低速离子在固体中的电子阻止本领

本文介绍了低速离子在固体材料中电子阻止本领的理论发展情况。着重介绍了有效电荷理论和根据有效电荷理论,由氢离子在材料中的电子阻止截面标度各种重离子在同种材料中电子阻止截面的方法。 用电导理论导出了低速离子贯穿价电子气的阻止截面公式,并给出了一套有效电荷比的经验公式。利用这套公式求得的电子阻止截面Se的值,既符合实验上发现的Se随z_1或z_2振荡的规律,又符合Se随入射离子能量的变化关系。     

Development of an electronic stopping power model based on deep learning and its application in ion range prediction

Deep learning algorithm emerges as a new method to take the raw features from large dataset and mine their deep implicit relations, which is promising for solving traditional physical challenges. A particularly intricate and difficult challenge is the energy loss mechanism of energetic ions in solid, where accurate prediction of stopping power is a long-time problem. In this work, we develop a deep-learning-based stopping power model with high overall accuracy, and overcome the long-standing deficiency of the existing classical models by improving the predictive accuracy of stopping power for ultra-heavy ion with low energy, and the corresponding projected range. This electronic stopping power model, based on deep learning algorithm, could be hopefully applied for the study of ion-solid interaction mechanism and enormous relevant applications.     

三代管MCP离子阻挡膜研究

三代管中GaAs光电阴极的表面Cs-O层经不住正离子的轰击,但在MCP的通道内,由于二次电子倍增,在MCP通道的输出端,电子密度较大,所以MCP通道内的残余气体分子就会被电离,正离子在电场的作用下向阴极方向运动,最终轰击阴极的表面Cs-O层,使阴极的灵敏度衰退.所以在MCP的输入端制作一层Al₂O₃离子阻挡膜对延长阴极的寿命是至关重要的作用.本文介绍了MCP离子阻挡膜的离子阻挡和电子透射原理,离子阻挡膜厚度的确定以及离子阻挡膜的制作工艺.     

Inelastic energy loss in solids

The dependence on the bombarding energy of the number of ejected electrons from a policrystalline Ag target is determined. Statistical methods are used in the calculation of the inelastic energy loss due to binary atomic collisions and in that of the electronic stopping cross-section. The calculation is executed for the case of Se⁺ bombarding ion in the 10–200 keV energy range.