A reliable noble gas duoplasmatron for the 10 mA range

Duoplasmatrons have been employed at GSI as accelerator sources of multiply charged heavy ions, but extensive experience was collected also with singly charged noble gas ions. Other ion species can be produced from volatile compounds. provided that the cathode is protected from aggressive vapours by an additional noble gas. In a second source modification. the sputter duoplasmatron, ions are directly obtained from solid material.

Recently the GSI-duoplasmatron has been equipped with plasma expansion cups in order to raise the ion current output. Generally, at least a factor of three is gained in beam intensity and other aspects of source performance are improved, too.

A new cathode design considerably enhances life-time and reliability, permitting uninterrupted operation for a few hundred hours. Tables of measured ion beam currents are given.     

Flashback and perspectives for the production of intense ion beams with ECR ion sources

There is a clear evidence that the combination of ability to produce intense beams of highly charged heavy ions and of reliability, stability and low emittance can be guaranteed only by an adequate design of electron cyclotron resonance ion sources (ECRIS). Following the roadmap defined by Geller's scaling laws (1987) and the high B-mode concept (1990), the evolution of ECRIS has been steady and it amounted to about one order of magnitude per decade, as for high charge state currents. A further increase is possible according to the standard model of ECR sources unless technological problems may limit it in the future. Some sources are in the commissioning or construction phase to get the milliampere level for highly charged heavy ions, and some limitations have been already found but the possibility to get a further step forward remains unchanged. This paper presents the flashbacks of previous relevant experiences, along with the perspectives for higher current production in the years after 2010.     

Ion implantation for semiconductor processing

The potential advantages of ion implantation have been exploited in virtually every kind of semiconductor device. Several commercially important devices owe their existence to this technique.

Ion implantation provides precise control over the amount of dopant, concentration profile and lateral dimensions in device fabrication. The high degree of uniformity and reproducibility have made it possible to produce sophisticated devices and integrated circuits with high yield and tight tolerances. This is a truly planar process. It is possible to achieve high doping concentrations with relatively lower processing temperatures thereby avoiding lifetime degradation. The process is carried out in an inherently clean environment. A wide range of dopants is available and one is not limited by the particular properties of the substrate. There is great flexibility in choice of masking materials and self-alignment of doped regions in MOS devices is facilitated.

The increasing impact of ion implantation on device technology is discussed with reference to some recent developments. Specific commercially manufactured devices are mentioned.

Ion implantation machines continue to undergo development aimed at higher throughputs and cleaner vacuum. There is the need for greater reliability of machines. Effort is also directed at the development of low cost machines for dedicated applications.

Design of implanted devices continues to be an empirical process in some respects. The ability to accurately predict profile shapes in samples implanted (perhaps through a screen oxide) and subject to complicated post-implantation process steps, would cut down development time and costs.     

Discharge and emission parameters of a plasma electron source based on a discharge in crossed E × H fields with various cathode materials

The possibility of using a plasma electron source (PES) with a discharge in crossed E × H field for compensating the ion beam from an end-Hall ion source (EHIS) is analyzed. The PES used as a neutralizer is mounted in the immediate vicinity of the EHIS ion generation and acceleration region at 90° to the source axis. The behavior of the discharge and emission parameters of the EHIS is determined for operation with a filament neutralizer and a plasma electron source. It is found that the maximal discharge current from the ion source attains a value of 3.8 A for operation with a PES and 4 A for operation with a filament compensator. It is established that the maximal discharge current for the ion source strongly depends on the working gas flow rate for low flow rates (up to 10 ml/min) in the EHIS; for higher flow rates, the maximum discharge current in the EHIS depends only on the emissivity of the PES. Analysis of the emission parameters of EHISs with filament and plasma neutralizers shows that the ion beam current and the ion current density distribution profile are independent of the type of the electron source and the ion current density can be as high as 0.2 mA/cm² at a distance of 25 cm from the EHIS anode. The balance of currents in the ion source-electron source system is considered on the basis of analysis of operation of EHISs with various sources of electrons. It is concluded that the neutralization current required for operation of an ion source in the discharge compensation mode must be equal to or larger than the discharge current of the ion source. The use of PES for compensating the ion beam from an end-Hall ion source proved to be effective in processes of ion-assisted deposition of thin films using reactive gases like O₂ or N₂. The application of the PES technique makes it possible to increase the lifetime of the ion-assisted deposition system by an order of magnitude (the lifetime with a Ti cathode is at least 60 h and is limited by the replacement life of the deposited cathode insertion).     

Neutralization of an ion beam from the end-Hall ion source by a plasma electron source based on a discharge in crossed E × H fields

The possibility of using a plasma electron source (PES) with a discharge in crossed E × H field for compensating the ion beam from an end-Hall ion source (EHIS) is analyzed. The PES used as a neutralizer is mounted in the immediate vicinity of the EHIS ion generation and acceleration region at 90° to the source axis. The behavior of the discharge and emission parameters of the EHIS is determined for operation with a filament neutralizer and a plasma electron source. It is found that the maximal discharge current from the ion source attains a value of 3.8 A for operation with a PES and 4 A for operation with a filament compensator. It is established that the maximal discharge current for the ion source strongly depends on the working gas flow rate for low flow rates (up to 10 ml/min) in the EHIS; for higher flow rates, the maximum discharge current in the EHIS depends only on the emissivity of the PES. Analysis of the emission parameters of EHISs with filament and plasma neutralizers shows that the ion beam current and the ion current density distribution profile are independent of the type of the electron source and the ion current density can be as high as 0.2 mA/cm² at a distance of 25 cm from the EHIS anode. The balance of currents in the ion source-electron source system is considered on the basis of analysis of operation of EHISs with various sources of electrons. It is concluded that the neutralization current required for operation of an ion source in the discharge compensation mode must be equal to or larger than the discharge current of the ion source. The use of PES for compensating the ion beam from an end-Hall ion source proved to be effective in processes of ion-assisted deposition of thin films using reactive gases like O₂ or N₂. The application of the PES technique makes it possible to increase the lifetime of the ion-assisted deposition system by an order of magnitude (the lifetime with a Ti cathode is at least 60 h and is limited by the replacement life of the deposited cathode insertion).     

Effects of source opacity and expansion on two-pion Bose-Einstein correlations

We examine two-pion Bose-Einstein correlations for partially coherent particle-emitting sources within quantum statistical formalism, where the sources are treated as classical currents with chaotic and coherent components. The two-pion correlation functions of the partially coherent sources contain a phase which is sensitive to the asymmetry of the source emission function. We investigate the influence of source opacity and expansion in high energy heavy ion collisions on the phase by Monte Carlo calculati...     

High throughput ion implantation systems in western electric

Within Western Electric, a number of high throughput systems have been developed to meet the differing needs of high voltage and low voltage ion implantation applications. The PR-500 is a general purpose 500 kV machine which provides typical target currents of 0.5 ma of the common dopants and throughputs of 100 75-mm wafers/hour. The PR-200 is a 200 kV machine with typical target currents of 2.5 ma P, As, and Sb, and 1.0 ma B, and wafer throughputs of 150/hour. The PR-30 is a 30 kV single-species machine which can perform predeposition implants at rates of up to 450 wafers/hour. Typical PR-30 target currents are 5 ma P, As, and Sb. and 1.5 ma B. Each of these systems makes use of a common family of high current ion sources, and a rotating disk mechanical scanning system which permits a minimum implant time for 1 % uniformity of two seconds per wafer.     

NIRS的ECR离子源现状

Four ECR ion sources have been operated in National Institute of Radiological Sciences(NIRS). Two ECR ion sources supply various ion species for the Heavy Ion Medical Accelerator in Chiba(HIMAC). The 10GHz NIRS-ECR ion source mainly produces C~(2 ) ions for the heavy-ion therapy.Ions of Si,Ar,Fe,Kr and Xe are usually produced by the 18GHz NIRS-HEC ion source for physical and biological experiments.The other two compact ECR ion sources with all permanent magnet configuration have been developed for the new generation carbon therapy facility.One of these,the Kei-source,is a prototype which has been installed to the NIRS-930 cyclotron for axial injection.The other source,Kei2-source,is a demonstration source and utilized for the new generation Linac.In addition,both Kei sources have been used to study fundamental properties. In this paper,present status of the ion sources and recent developments are reported.     

Influence of source directivity on noise levels in industrial halls: Simulation and experiments

Noise exposure of workers in industrial halls is mainly induced by noisy machines whose acoustical features are often globally known by Sound Pressure Level. The evaluation of the directivity of these noise sources can help to anticipate specific solutions for noise reduction.This study shows how the directivities of three wood-working machines have been characterized. Some characterisations have been achieved with a simple and fast acoustical intensity mapping which meets the constraints of industrial areas.When source directivity is evaluated, its influence on the noise field in industrial halls can be assessed. Some simulations and some experiments allowed the estimation of the noise field induced in workshops by both directional and omnidirectional sources. Comparison of the fields prove that the noise distribution is influenced by the source directivity if the halls are empty. As soon as the halls contain scattering objects, the directivity effect is reduced a lot and the noise field remains nearly the same far from the source whatever source used. Nevertheless, workers close to a machine are exposed to noise according to their position with respect to the machine. Exposure at the workplace can vary from 4 to 8 dB(A) according to the directivity of machines such as those measured in the trials.     

2 cm电子回旋共振离子推力器离子源中磁场对等离子体特性与壁面电流影响的数值模拟

电子回旋共振离子推力器(electron cyclotron resonance ion thruster,ECRIT)离子源内等离子体分布会影响束流引出,而磁场结构决定的ECR区与天线的相对位置共同影响了等离子体分布.在鞘层作用下,等离子体中的离子或电子被加速对壁面产生溅射,形成壁面离子或电子电流,造成壁面磨损和等离子体损失,因此研究壁面电流与等离子体特征十分重要.为此本文建立2 cm ECRIT的粒子PIC/MCC(particle-in-cell with Monte Carlo collision)仿真模型,数值模拟研究磁场结构对离子源内等离子体与壁面电流特性的影响.计算表明,当ECR区位于天线上游时,等离子体集中在天线上游和内外磁环间,栅极前离子密度最低,故离子源引出束流、磁环端面电流和天线壁面电流较低.ECR区位于天线下游时,天线和栅极上游附近的等离子体密度较高,故离子源引出束流、天线壁面电流和磁环端面电流较高.腔体壁面等离子体分布与电流受磁场影响最小.     

Plasma Sources in Analytical Mass Spectrometry

Abstract

The recent interest in gas discharge ion sources for analytical mass spectrometry illustrates the often cyclic nature of scientific progress. The ion source capabilities of a gas discharge were discovered by Goldstein [1] in 1886 and such discharges were used by the pioneer mass spectroscopists (Thomson, Aston, and Bainbridge) as a convenient source of ions. The simplicity of design (see Fig. 1) and the high output ion currents were decisive factors in such applications. Alternative ion sources then replaced the gas discharge, to the point where the production of ions by gaseous discharge was suggested, correctly, to be of “more historical than contemporary interest” [2]. Nevertheless, new requirements and developments, as described in this paper, have once again drawn attention to the plasma ion source as having possible specialized and valuable analytical applications.     

工艺导致的机械应力对深亚微米CMOS器件的影响

随着CMOS器件的不断微缩,硅有源区面积的缩小,工艺导致的机械应力对器件的影响越来越显著,许多工艺步骤会造成有源区应力的累积.应力不仅导致器件性能对版图产生依赖性,而且带来各种可靠性问题,影响芯片的长期使用寿命.在很多情况下,应力相关的问题直接影响芯片制造的良率.在总结各种应力来源的基础上,回顾了到目前为止人们所观察或理解的应力对CMOS器件性能和可靠性的各种影响,提出了分析和解决工业生产中应力相关问题的基本思路. 关键词： 机械应力 CMOS     

AISHa mechanical study and commissioning

ABSTRACT

The ion sources for accelerators devoted to medical applications must provide intense ion beams, with high reproducibility, stability and brightness. AISHa (Advanced Ion Source for Hadron therapy) is a compact ECRIS whose hybrid magnetic system consists of a permanent Halbach-type hexapole magnet and a set of independently energized superconducting coils. These coils will be enclosed in a compact cryostat with two cryocoolers for LHe-free operation. The AISHa ion source has been designed by taking into account the typical requirements of hospital-based facilities, where the minimization of the mean time between failures (MTBF) is a key point together with the maintenance operations which should be fast and easy. It is a multipurpose device, operating at 18?GHz, in order to achieve higher plasma densities able to provide enough versatility for future needs of the hadron therapy, including the ability to run at larger microwave power to produce different species and highly charged ion beams. In this paper, the innovative solutions, used for the plasma containment chamber and for the permanent magnet hexapole holder, are presented to solve the insulation and structural issues. The choice of the different materials used is hereinafter discussed together with all the involved processes (spinning, curing and machining). The glass fibers and carbon fibers are used to reinforce polymer matrices and give rise to structural composites and composites by molding. The paper shows also some results of ion source commissioning along with next developments. Innovative active coupling techniques are planned to be tested to optimize the first pass wave absorption, which plays an important role in the coupling optimization of the new-generation ECRIS.     

Exposure assessment of process by-product nanoparticles released during the preventive maintenance of semiconductor fabrication facilities

This study characterized the process by-product particles (mostly nanoparticles) released during the preventive maintenance of semiconductor fabrication facilities, such as chemical mechanical planarization (CMP), plasma-enhanced chemical vapor deposition (PECVD), and ion implantation. Manual sampling and real-time measurements with direct reading instruments were conducted to assess the exposure levels of nanoparticles and their physical and chemical properties. Significant amount of nanoparticles were observed in the breathing zone of the workers during the maintenance of the PECVD and ion implanters with the peak number concentrations as high as 6,470,000 and 65,444 #/cm³, respectively, indicating that the deposited residual chemicals in the reaction chambers were released as airborne nanoparticles by the maintenance activities. In contrast, nanoparticles released during the maintenance of the local scrubber, CMP, and replacing CMP slurry drums were insignificant. Causes of the particle release were discussed and suggestions were made to mitigate the nanoparticle release and reduce the exposure levels.     

Investigations of electron beam characteristics using an accelerator based on a magnetron gun with a secondary-emission cathode

The reliability and service life of accelerating installations are substantially determined by the lifetime of electron sources. The accelerator under consideration has a magnetron gun with a channel-free cold secondary-emission cathode in crossed fields as an electron source [1, 2]. In the present work, the data of the electron beam parameters obtained in the accelerator based on the magnetron gun with a secondary-emission cathode are given, and possible secondary uses are suggested. The text was submitted by the authors in English.     

Intense beam production with ECR ion sources

Electron cyclotron resonance ion sources are now able to attain a beam current as high as some milliamperes, which until a few years ago was obtained only for pulsed laser ion sources with a much higher emittance and energy spread, by keeping also the possibility to produce high charge states close to electron beam ion sources, at much higher intensity. They usually operate at frequencies up to 18 GHz, but now many sources are able to operate or will be able, at 28 GHz frequency or more, with plasma density of the order of 10¹³ cm^?3, much higher than any other source of the previous generation. The state-of-the-art technique will be described along with the major characteristics of the upcoming sources.     

The Munich Compact Light Source: initial performance measures

While large‐scale synchrotron sources provide a highly brilliant monochromatic X‐ray beam, these X‐ray sources are expensive in terms of installation and maintenance, and require large amounts of space due to the size of storage rings for GeV electrons. On the other hand, laboratory X‐ray tube sources can easily be implemented in laboratories or hospitals with comparatively little cost, but their performance features a lower brilliance and a polychromatic spectrum creates problems with beam hardening artifacts for imaging experiments. Over the last decade, compact synchrotron sources based on inverse Compton scattering have evolved as one of the most promising types of laboratory‐scale X‐ray sources: they provide a performance and brilliance that lie in between those of large‐scale synchrotron sources and X‐ray tube sources, with significantly reduced financial and spatial requirements. These sources produce X‐rays through the collision of relativistic electrons with infrared laser photons. In this study, an analysis of the performance, such as X‐ray flux, source size and spectra, of the first commercially sold compact light source, the Munich Compact Light Source, is presented.     

Current-voltage characteristics of a gas field ion source

Current-voltage characteristics of a gas field ion source (GFIS) have been measured for hydrogen and all rare gases. The parameter set included tip temperature, tip radius and gas temperature and pressure. This investigation has been made to get a complete overview of the field ion currents (FIC) and to estimate the maximum currents in a GFIS, which have been found to a few 100 nA. This estimate allows also a feasibility study of a GFIS, modified by a supertip, a small protuberance on the emitter surface.     

High rep rate high performance plasma focus as a powerful radiationsource

Basic operational characteristics of the plasma focus are considered from design perspectives to develop powerful radiation sources. Using these ideas we have developed two compact plasma focus (CPF) devices operating in neon with high performance and high repetition rate capacity for use as an intense soft X-ray (SXR) source for microelectronics lithography. The NX1 is a four-module system with a peak current of 320 kA when the capacitor bank (7.8 μF×4) is charged to 14 kV. It produces 100 J of SXR per shot (4% wall plug efficiency) giving at 3 Hz, 300 W of average SXR power into 4π. The NX2 is also a four-module system. Each module uses a rail gap switching 12 capacitors each with a capacity of 0.6 μF. The NX2 operates with peak currents of 400 kA at 11.5 kV into water-cooled electrodes at repetition rates up to 16 Hz to produce 300 W SXR in burst durations of several minutes. SXR lithographs are taken from both machines to demonstrate that sufficient SXR flux is generated for an exposure with only 300 shots. In addition, flash electron lithographs are also obtained requiring only ten shots per exposure. Such high performance compact machines may be improved to yield over 1 kW of SXR, enabling sufficient exposure throughput to be of interest to the wafer industry. In deuterium the neutron yield could be over 10¹⁰ neutrons per second over prolonged bursts of minutes     

放射性核素寿命计算方法的模拟研究

根据几种常用放射性核素的寿命计算方法,通过模拟数据研究了直接拟合法、对数时间法、极大似然法、观测时间受限时的极大似然法等四种寿命计算方法的适用范围。当观测时间不受限时,研究了在不同计数下寿命计算方法的适用范围。当观测时间受限时,研究了在不同观测时间窗口下寿命计算方法的适用范围。模拟中选用全剥离离子94mRu44+作为目标核素,得到了不同计数及不同观测时间窗口下的寿命及其误差,并给出了四种方法的适用范围。94mRu44+寿命的模拟结果与在兰州等时性质量谱仪上获得的实验结果在一倍标准偏差范围内一致,从而进一步验证了寿命计算方法的适用范围及模拟数据的可靠性。该模拟结果可为寿命测量实验设计提供理论依据和参考。