Compound synthesis in TiO2 implanted with Rubidium

Rubidium ions, with energy in the range 0.1 MeV, 2.0 MeV have been implanted in TiO₂ single crystals at RT and LNT.

Defects induced by implantation have been studied by optical spectroscopy, X-ray diffraction, RBS, TEM and electrical conductivity.

During implantation, the implanted samples are blue colored after irradiation. This coloration is due to an optical absorption band localized at 900 nm which corresponds to optical transition of intrinsic defects identified as Ti³⁺. These defects are induced by a chemical reaction between the implanted ions and the oxygen of the lattice as in the case of D⁺, H⁺, Li⁺, Na⁺ and K⁺ implanted in rutile.^1-3

The synthesis of a new phase in heavily implanted rutile is exhibited by using a thermal treatment and by combining techniques such as RBS, TEM and X-ray diffraction at glancing angle in the temperature range 300°C-700°C.

This compound does not correspond to metallic precipitates of rubidium which are observed in MgO implanted with Rb ions.

Planar defects have been observed in the implanted area. A correlation is exhibited between these defects and the precipitates of the new phase. From X-ray diffraction measurements and TEM observations, the composition of the synthetized compound is likely Rb₂TiO₃.     

Effect of the ionization energy loss density of high-energy bismuth,krypton, and xenon ions on the development of hydrogen blisters in silicon

Radiation-induced athermal hydrogen removal from single-crystal silicon subjected to irradiation by high-energy heavy Bi⁺ (E = 710 MeV), Kr⁺ (E = 85 and 250 MeV), and Xe⁺ (130 MeV) ions is detected experimentally. The decrease in the hydrogen concentration depends on the specific ionization energy losses of high-energy heavy ions. At high specific ionization losses of Bi⁺ ions with E = 710 MeV (22.5 keV/nm), the hydrogen concentration decreases to a level at which blisters cannot be observed in an optical or electron microscope (which is likely to be 1 at % hydrogen at the peak of the calculated hydrogen concentration profile). At medium specific ionization losses of Xe⁺ ions with E = 130 MeV (12.5 keV/nm) and Kr⁺ ions with E = 250 and 85 MeV (9.5 and 8.5 keV/nm, respectively), the hydrogen concentration decreases to a level that does not affect blister formation but determines the blister failure (flaking) conditions.     

Ion bombardment-induced charge state effects CaO single crystals: F+ and F centers

The effects of heavy-and light-ion bombardment on defect formation in CaO have been investigated by UV-absorption spectroscopy and volume measurements. While 500 keV Ar or Ca implantation produces only F⁺ centers, 240 keVH produces both F⁺ and F centers at a F⁺ to F ratio of 5.6 to 1. On the other hand, when an argon implanted sample is subsequently bombarded with hydrogen, about 30% of the F⁺ centers anneal during 1 ×10¹⁴ H/cm²; at higher H fluences, new F⁺ and F centers are produced. An effect of energy partition between ionization and nuclear/atomic collision processes for the incident ions on the charge state of the resulting defect is thus clearly demonstrated.

The formation and annealing of these defects are accompanied by volume changes in the ion implanted surface layer which can be monitored in sltu with a cantilever beam technique. The measurements show volume expansion of the order of 1.5% following 10¹⁶ 500 keV Ar implantation; subsequent implantation of 10¹⁸ 240 keV H compacts the previously expanded material by 25 %. These results are in qualitative agreement with the optical data and seem to indicate that volume changes are associated with the formation and annealing of F⁺ centers.     

Selective excitation in kaon-nucleus inelastic scattering

The K⁺ meson (kaon) inelastic excitation of low-lying (E_x = 0–15 MeV) T = 0 collective states in ¹⁶O is theoretically studied as a function of energy and momentum transfer. The distorted wave impulse approximation is used to calculate angular distributions and total inelastic cross sections for exciting the first J^π = 2⁺, 3^?, 4⁺ and 5^? states at lab energies from threshold to 400 MeV. The distortions are represented in a Kisslinger-type optical potential constructed from elementary K⁺-nucleon amplitudes. Total nuclear elastic and reaction K⁺-nucleus cross sections are computed to demonstrate sensitivity to choice in K⁺-nucleon amplitudes. Fermi motion effects are also assessed using a simple averaging procedure. The weak absorption character of the kaon is reflected in the inelastic calculations which predict selective excitation of low spin states at low momentum transfer and high spin states at high momentum transfer.     

Ion implantation damage and crystalline-amorphous transition in Ge

Experimental studies on the damage produced in (100) Ge substrates by implantation of Ge⁺ ions at different energies (from 25 to 600 keV), fluences (from 2×10¹³ to 4×10¹⁴ cm⁻²) and temperature (room temperature, RT, or liquid-nitrogen temperature, LN₂T) have been performed by using the Rutherford backscattering spectrometry technique. We demonstrated that the higher damage rate of Ge with respect to Si is due to both the high stopping power of germanium atoms and the low mobility of point defects within the collision cascades. The amorphization of Ge has been modeled by employing the critical damage energy density model in a large range of implantation energies and fluences both at RT and LN₂T. The experimental results for implantation at LN₂T were fitted using a critical damage energy density of ∼1 eV/atom. A fictitious value of ∼5 eV/atom was obtained for the samples implanted at RT, essentially because at RT the damage annihilation plays a non-negligible role against the crystalline–amorphous transition phase. The critical damage energy density model was found to stand also for other ions implanted in crystalline Ge (Ar⁺ and Ga⁺).     

A study of radiation damage by elastic scattering experiments

Abstract

Chaneling measurements are used to study the structure and configuration of defects produced in CdS under irradiation by 50–150 KeV Na⁺ ions at room temperature with a current density of 1 μA/cm² and irradiation dose 3.10¹⁵ ion/cm².

The results of studies of 1.8 MeV He⁺ ion dechaneling along the <1120> and <0001> axes are probably indicative of the defect structure extended along the <0001> axis.

For the dependence of the dechaneling cross-section on the ⁴He energy in the energy range 1.2 to 2.4 MeV we found E^?1, which characterizes the produced defects as randomly distributed complexes of interstitial atoms straining the crystal lattice.

The fact that the defects are mostly located along the <0001> direction can possibly be explained by strong anisotropy of CdS therefore the defects form the region of elastic stresses in the crystal which are maximum along the <0001> axis.     

The reaction mechanism of heavy ion scattering at intermediate energies

The contribution to the real and imaginary nucleus-nucleus (N-N) optical potential from nucleon-nucleon scattering in the medium is calculated in a local density approximation from a two Fermi sphere nuclear matter picture for the N-N collision. This reaction mechanism is shown to be dominant for ¹²C + ¹²C scattering at all considered energies (160 MeV < E_lab < 2250 MeV) giving a weakly energy dependent reaction cross section of about 900 mb. Inclusion of the collective 2⁺, 3^? excitations in a coupled channel calculations gives good agreement for both the measured elastic and inelastic 2⁺ cross section at E_lab = 1016 MeV. This fully microscopic parameter free calculation indicates that the energy dependence of the reaction cross section for this system is mostly due to the decrease of the collective contribution with increasing energy contrary to current theoretical models.     

Quasi-elastic and deep-inelastic dissipative processes

Quasi-elastic and deep inelastic rates are calculated assuming that the colliding nuclei move on classical trajectories and that the excitations and the particle or energy exchanges are due to the shell-model wells interacting with the nucleons. (One-body collisions). This allows a microscopic, parameter free, calculation of the optical potential, as well as the energy and the angular momentum losses, and is a good approximation as long as the collision is peripheral. The correction due to two-body collisions between individual nucleons is also evaluated. The focus will be on the evolution of the various reaction rates as a function of energy. The system chosen for the discussion is ¹⁶O + ¹⁶O from 3 MeV/A to 60 MeV/A.     

A measurement of Kevγ+ decay

The decay K⁺ → e⁺vγ has been observed. In a counter experiment at CERN, 56 events of this type have been identified by detection of a γ with an energy > 100 MeV and of an e⁺ with an energy between 236 MeV and the maximum e⁺ energy, 247 MeV. The angle between γ and e⁺ was > 120°. Thus, the experiment was sensitive only to the structure decay (SD) term proportional to the squared sum of vector- and axialvector amplitudes, |ν_K + a_K|², corresponding to the emission of right handed γ. We find Δ₊(SD)/Δ(K_e2) = 1.05_?0.30^+0.25 and Δ_(SD) < 85 (90% CL). Δ₊ is in agreement with theoretical predictions.     

Defects in ion-implanted crystalline silicon probed by femtosecond laser spectroscopy

Summary Radiation damage is generated in a controlled manner by MeV ion implantation of Si⁺ and He⁺ ions in c-Si and studied by ultrafast laser pulses on a subpicosecond time scale. In Si⁺-implanted samples the amorphization of the sample is achieved at sufficiently high doses, while He implants only produce a very low level of damage. Defects are investigated after implantation by measuringex situ the change of reflectivity caused by a high density of electron-hole plasma generated by femtosecond laser pulses. The plasma decay time decreases as a function of the implantation dose in both Si- and He-implanted samples, reaching a minimum value of ≈1 ps. It is observed that the saturation of the decay time is not related to the amorphization of the sample, but rather to the formation of simple defects produced during ion implantation.     

A new experimental limit for the decay K+ → π+γγ

A search for K⁺ → π⁺γ, π⁺γγ, π⁺γγγ was made detecting pions from stopped kaons in the kinetic energy region between 117 MeV and 127 MeV. New Limits of 1.4 ×10^?6, 8.4 × 10^?6 and 1.0 × 10^?4 for the branching ratio were obtained assuming a phase-space spectrum on the pion energy. The first limit also aplies to another process K⁺ → π⁺ + a, where a is a light meson with mass smaller than 100 MeV/c² and decays into nγ's with lifetime less than 10^?9 s.     

High-spin states of 26Mg populated in the 12C(18O, α) reaction

The structure of ²⁶Mg has been investigated by means of the ¹²C(¹⁸O, α) reaction. Several previously unknown states were populated between excitation energies of 0 to 16 MeV. Excitation functions were measured for 126 states for bombarding energies between 43.2 and 45.9 MeV in 300 keV steps at a lab angle of 7°. The experimental energy averaged differential cross sections were compared with statistical model calculations and good agreement was obtained for the states whose spins and parities were previously established. The statistical model calculations were used to suggest the spins and parities for the rest of the states. In particular, candidates for 6⁺ and 8⁺ states were interpreted as members of three rotational bands in ²⁶Mg: the ground-state band, the K = 2⁺ band based on the 2.938 MeV 2⁺ state, and a K = 0⁺ band based on the 3.588 MeV 0⁺ state. Back bending of the yrast band is observed and it is suggested that it may be due to band crossing of the ground-state and first excited K = 0⁺ bands.     

Surface and volume contributions to real and imaginary parts of the heavy-ion optical potential

Starting from the Feshbach expression for the optical potential, explicit formulae for the real and the imaginary parts of the optical potential between two heavy ions (HI's) are obtained. They are each composed of a volume and a surface term. The contributions to the volume term are calculated in two nuclear Fermi liquids which flow through each other starting from the realistic Reid soft core nucleon-nucleon (NN) interaction. Since the Fermi surface is formed by two spheres one obtains a complex Brueckner reaction matrix which is approximated by a complex, effective local interaction. It is used in a fully antisymmetrized double folding procedure to obtain the volume terms of the optical potential between the two HI's. The surface contributions are directly calculated in the collision of the two finite HI's. The collective surface vibrations (3^? octupole state and 2⁺, 4⁺ (T = 0) giant resonances for the ¹⁶O?¹⁶O collision) are included as intermediate states. This yields especially an imaginary contribution at the surface which reduces the transparency found with the volume terms alone. The method is applied to ¹⁶O?¹⁶O scattering at 83 and 332 MeV laboratory energy. The local approximations to the real and imaginary parts obtained in this way agree well with phenomenological fits. The surface terms improve the agreement of the differential cross section at 80 MeV where experimental data are available.     

磷分子离子(P2+)注入硅的损伤行为

本文研究了不同能量(5—600keV)和不同剂量(10¹⁴-10¹⁶atom/cm²)下的P₂⁺和P⁺注入〈100〉单晶硅后的损伤及退火行为。实验结果表明,P₂⁺注入所产生的损伤总是大于P⁺注入所产生的损伤。由移位效率之比N_D^*(mol)/2N_D^*(atom)所表征的分子效应随入射能量的改变而变化并在100keV(P₂⁺),50keV(P⁺)处达到极大值。P₂⁺与P⁺注入的样品,退火后的载流子分布也有某些区别。我们认为,产生这些分子效应的基本原因是位移尖峰效应,但当入射离子的能量较高时,还应该考虑离子、靶原子之间的多体碰撞效应的贡献。 关键词：     

Implantation as a tool for performing selective materials (application to solar energy conversion)

A selective solar material must absorb most of the solar spectrum, principally the visible light, and reflect the IR light.

Insulators are generally transparent in a wide part of the optical spectrum and the defects are revealed in these crystals by strong absorption bands. On the other hand, metals absorb much of the IR and near IR light and have a large reflection coefficient in the same region of the spectrum. In previous papers^1,2 it has been shown that metallic colloids, formed by precipitation of impurities in insulators, are responsible for a strong absorption band. Such metallic inclusions may be easily produced in most insulators by implantation. According to the nature of the implanted metal a selective absorption can be obtained. So a composite material (cermet) may be performed combining a colloidal absorption in the visible and a metallic reflection. We will discuss the different ways to achieve these properties using direct ion beam implantation.

Various cermets (LiF: Na, Au; MgO: Na, Au) have been studied as function of energy (0.1-1 MeV) and dose (10¹⁶-10¹⁷ ions/cm²). Colloids are completely developed by consecutive annealing.⁴

The modelization of these cermets requires a careful characterization by optical methods (spectrophotometry) and microscopic investigation (TEM, SEM, RBS, SIMS).⁷ These techniques are used to determine the filling factor and the concentration profile of metal in the insulating matrix.

With the help of the Maxwell-Garnett theory and using a single or multilayer model it is possible to suggest an interpretation of the optical properties.     

Fragmentation Study of Globularin Through Positive and Negative ESI/MS,CID/MS,and Tandem MS/MS

Abstract

The structure of globularin was studied by a mass spectrometric methodology based on the combined use of positive and negative electrospray ionization, collision‐induced dissociation (CID), and tandem mass spectrometry. The mass spectrometry investigation was achieved through in‐source fragmentation of the deprotonated [M?H]^?, protonated [M+H]⁺, lithiated [M+Li]⁺, sodiated [M+Na]⁺, and potassium‐cationized [M+K]⁺ ions. This allowed collision‐induced dissociation spectra of the ionized molecular ions to be obtained to give valuable structural information regarding the nature of both the glycoside and the aglycone moieties and the effect of metal cationization on the CID spectra. Glycosidic fission and ring cleavages of both aglycone and sugar moieties were the major fragmentation pathways observed during collision‐induced dissociation, where the losses of small molecules, the cinnamoyl and the cinnamate parts were also observed. Alkali metal cationization offers additional fragmentation pathways involving cross rings cleavage under CID conditions. Unlike the dissociation of protonated molecular ions, that of metal‐cationized molecules also provides sugar fragments where the C₀ ⁺ fragment corresponding with the glucose ion was obtained as a major daughter peak for all the studied compounds. Even with low abundance, fragment ions coordinated to K⁺ were also observed from [M+K]⁺.     

Positron annihilation studies of heavy-ion induced radiation damages in stainless steels

Variable-energy (0–30 keV) positrons were used to study the depth distribution of heavy-ion induced vacancy type defects in the following specimens, SUS304 and SUS316 austenitic stainless steels, a SUS444 ferritic stainless steel and nickel metal, which were irradiated by 0.5 MeV He⁺, 2.0 MeV C⁺, 3.5 MeV Si²⁺ and 4.0 MeV Ni²⁺ ions up to 0.01 dpa at peak. Vacancy type effective residual defects (ERD) were evaluated from the line shape parameterS of Doppler broadened positron annihilation photon spectra. With increasing primary knockon atom (PKA) energy, a decrease of the vacancy type ERD was observed. The ERD differences among the specimens are discussed in comparison with theoretical predictions.     

Influence of monovalent cationic impurities on plasticity of AgCl

The hardening effect of Li⁺, Na⁺, K⁺ and Rb⁺ impurities in polycrystalline AgCl was investigated. With increasing concentration of the impurities the flow stress increases and the plasticity decreases. By doping with a few ppm of Rb⁺ AgCl becomes very brittle. Comparing the results with the statistical theory of solid solution hardening, deviations were found.     

Optical model potential of 800 MeV/c K+ meson for12C and40Ca by the method of inversion

The elastic scattering differential cross-sections of 800 MeV/c K⁺ mesons from¹²C and Ca have been analyzed using the Ericson’s parametrization for the phase shift. It is found that the parameter values obtained by our analysis are significantly different from those obtained from the closed expression for K⁺-nucleus amplitude derived by the strong absorption approximation. Next, using the phase shift obtained from the present analysis we calculate the K⁺ optical model potentials for¹²C and⁴⁰Ca by the method of inversion. The calculated potentials are compared with the recently determined phenomenological ones.     

Au5+ ion implantation induced structural phase transitions probed through structural,microstructural and phonon properties in BiFeO3 ceramics,using synergistic ion beam energy

Implanted Au⁵⁺-ion-induced modification in structural and phonon properties of phase pure BiFeO₃ (BFO) ceramics prepared by sol–gel method was investigated. These BFO samples were implanted by 15.8?MeV ions of Au⁵⁺ at various ion fluence ranging from 1?×?10¹⁴ to 5?×?10¹⁵?ions/cm². Effect of Au⁵⁺ ions’ implantation is explained in terms of structural phase transition coupled with amorphization/recrystallization due to ion implantation probed through XRD, SEM, EDX and Raman spectroscopy. XRD patterns show broad diffuse contributions due to amorphization in implanted samples. SEM images show grains collapsing and mounds’ formation over the surface due to mass transport. The peaks of the Raman spectra were broadened and also the peak intensities were decreased for the samples irradiated with 15.8?MeV Au⁵⁺ ions at a fluence of 5?×?10¹⁵?ion/cm². The percentage increase/decrease in amorphization and recrystallization has been estimated from Raman and XRD data, which support the synergistic effects being operative due to comparable nuclear and electronic energy losses at 15.8?MeV Au⁵⁺ ion implantation. Effect of thermal treatment on implanted samples is also probed and discussed.