预注入对Si1-xCx合金形成的影响

室温下在单晶Si中注入(0.6—1.5)at%的C原子,部分样品在C离子注入之前在其中注入²⁹Si⁺离子产生损伤,然后在相同条件下利用高温退火固相外延了Si_1-xC_x合金,研究了预注入对Si_1-xC_x合金形成的影响.如果注入C离子的剂量小于引起Si非晶化的剂量,在950℃退火过程中注入产生的损伤缺陷容易与C原子结合形成缺陷团簇,难于形成Si_1-xC关键词： 离子注入 固相外延 1-xC_x合金')" href="#">Si_1-xC_x合金     

Ion bombardment of Fe-based amorphous metallic alloys

Fe₇₄Cu₁Nb₃Si₁₆B₆ amorphous metallic alloy is investigated after ion irradiation by 110 keV N^?+? and 593 MeV Au ions. The depth-profiles of the radiation damage were calculated by the SRIM2008 code. Applicability of transmission and conversion electron Mössbauer effect measurements to distinguish between the bulk and surface radiation damage is demonstrated by using different irradiation conditions. The investigated alloy is characterized by ferromagnetic interactions. The implantation does not depict appreciable changes of the samples’ surfaces. Changes in chemical short-range order (SRO) are revealed in N^?+? irradiated alloys. Heavy Au ions caused pronounced effects in the position of the net magnetization though no impact on SRO was observed. After annealing, structural relaxation and annealing-out of the irradiation-induced stresses caused the rotation of the net magnetization back to its original position.     

非晶Fe73.5Cu1Nb3Si13.5B9合金激光纳米化的超精细结构研究

在CO₂激光功率为50—300W、扫描速度为20mm/s、激光散光斑为20mm照射条件下 ，诱导非 晶Fe_735Cu₁Nb₃Si_135B9带中发生结构重组，产生定量纳米α-F e(Si)晶相形成双相组织结构材料. 利用穆斯堡尔谱研究了非晶Fe_735C u₁Nb₃Si_135B₉合金激光纳米化的 超精细结构. 实验结果表明，激光诱导非晶 Fe_735Cu₁Nb₃Si_135B ₉纳米化后，其超精细磁场的分布随 着激光功率变 化由单峰向双峰变化，在高功率辐照时， 出现了双峰分布，并且峰位向高场移动. 高激光 功率辐照非晶Fe_735Cu₁Nb₃Si_{135B9合金纳米晶化相有四种超精细结 构，即2个超精细磁场较小的初晶相和2个超精细磁场较大的纳米晶化相. 其中超精细磁场较 大(17—25MA/m)的α-Fe(Si)相为DO3结构. 关键词： 激光 纳米晶α-Fe（Si) 735}Cu₁Nb< sub>3Si_135B₉')" href="#">非晶Fe_735Cu₁Nb< sub>3Si_135B₉ 超精细结构 超精细磁场     

激光辐照非晶Fe73.5Cu1Nb3Si13.5B 9微量晶化的穆斯堡尔谱研究

在激光功率为40—160W、扫描速度为10mm/s、激光光斑为20mm照射条件下,用CO ₂激 光辐照非晶Fe_73.5Cu₁Nb₃Si_13.5B_{9< /sub>产生微量晶化.利用透射穆斯堡尔谱 （TMS）技术分析了原始态和晶化后样品的超精细结构.确定了穆斯堡尔谱的基本参数——化 学位移(IS)、四极分裂(QS)、内磁场(Hhf)随激光功率变化的规律.分析表明，CO2关键词： 激光辐照 微量晶化 73.5Cu1Nb3 Si13.5B9')" href="#">非晶Fe73.5Cu1Nb3 Si13.5B9 穆斯堡尔谱}     

High energy (~ 107 eV) Si peak in Ar excited auger emission from silicon and silicides

The Ar⁺ excited electron emission from Si and Si-Ni compounds (from NiSi₂ to Ni₃Si) was studied, with emphasis on the high energy peak in the Si (L₂₃-related) spectrum. This peak is associated with the decay of Si atoms having two 2p holes (Si²*); therefore it originates in asymmetric (Ar-Si) collisions only. It has been investigated to determine the occurrence of these collisions with respect to the symmetric (Si-Si) ones and their relative weight.The threshold energy for the Si^2* related Auger emission was found to be about 2.9 keV in Si and silicides, significantly lower than previously reported. Above this threshold, the relative weight of the asymmetric collisions increases with ion energy and depends on the target stoichiometry, being greater in metal-rich silicides. However in the investigated ion energy range (1 to 5 keV) the total Auger yield was found to be mainly related to the symmetric collisions.We also investigated the dependence of the high energy Si peak on the excitation and acceptance geometry. The results indicate that asymmetric collisions are mainly “surface events”, resulting in the ejection of an anisotropic flux of energetic Si atoms.     

离子注入Si损伤分布的光谱法多层分析

应用多层模型和最优化方法,由实验测得的离子注入Si的椭偏光谱以及单晶Si和离子注入非晶Si的光学常数,能分析离子注入Si的损伤分布。我们测量了2.1—4.6eV能量范围的椭偏光谱和光学常数,建立了多层计算模型和最优化方法。在模拟分析的基础上,计算了能量为40keV,剂量分别为4×10¹³和1.4×10¹⁴cm^-2的As⁺注入Si的损伤分布,并与背散射测量的结果比较。用多层模型和最优化方法也能从光谱分析其它物理量的分布,只要这些物理量对光学性质有显著的影响,并且在测量过程中不随光子能量而改变。 关键词：     

Mössbauer study of structural defects in metallic glasses

Radiation damage produced in amorphous Fe₇₈Si₇B₁₁Cz by thermal neutron irradiation has been studied with an aim to get information about defects and other structural changes occuring in the system. Neutron irradiation results in surface crystallization of the specimen via radiation enhanced diffusion. Mössbauer studies give evidence against the formation of point-like defects on irradiation.     

Secondary ion emission under the bombardment of Si by multiply charged Si q+ ions

The spectra of secondary ion emission under the bombardment of a B-doped Si target by multiply charged Si ^q+ ions (q = 1?C5) have been studied in the energy range of 1 to 10 keV per unit of charge. A multifold increase in the yield of secondary cluster Sk _n ⁺ ions, multiply charged Si ^q/+ ion (q = 1?C3), and H⁺, C⁺, B⁺, Si₂N⁺, Si₂O⁺ is observed as the charge of the multiply charged ions increases. The increase in the yield of secondary ions with increasing charge of the multiply charged-ion charge is most significant for ions with relatively high ionization potentials.     

用椭圆偏光法研究硅中砷离子注入的损伤和退火效应

我们用椭圆偏光法对As⁺离子注入Si的损伤和退火效应进行了测量。对As⁺注入能量为150keV、注入剂量为10¹⁶cm^-2的情况,测得的折射率分布呈现平台型,表明出现了非晶质层。在600—700℃间有一转变温度,高于此温度退火,可消除非晶质层。实验结果表明椭圆偏光法亦是测定辐射损伤的有用工具。 关键词：     

Formation of Sim and SimCn clusters by C60 sputtering of Si

The secondary ion mass spectrum of silicon sputtered by high energy C₆₀⁺ ions in sputter equilibrium is found to be dominated by Si clusters and we report the relative yields of Si_m⁺ (1 ≤ m ≤ 15) and various Si_mC_n⁺ clusters (1 ≤ m ≤ 11 for n = 1; 1 ≤ m ≤ 6 for n = 2; 1 ≤ m ≤ 4 for n = 3). The yields of Si_m⁺ clusters up to Si₇⁺ are significant (between 0.1 and 0.6 of the Si⁺ yield) with even numbered clusters Si₄⁺ and Si₆⁺ having the highest probability of formation. The abundances of cluster ions between Si₈⁺ and Si₁₁⁺ are still significant (>1% relative to Si⁺) but drop by a factor of ∼100 between Si₁₁⁺ and Si₁₃⁺. The probability of formation of clusters Si₁₃⁺-Si₁₅⁺ is approximately constant at ∼5 × 10⁻⁴ relative to Si⁺ and rising a little for Si₁₅⁺, but clusters beyond Si₁₅ are not detected (Si_m≥16⁺/Si⁺ < 1 × 10⁻⁴). The probability of formation of Si_m⁺ and Si_mC_n⁺ clusters depends only very weakly on the C₆₀⁺ primary ion energy between 13.5 keV and 37.5 keV. The behaviour of Si_m⁺ and Si_mC_n⁺ cluster ions was also investigated for impacts onto a fresh Si surface to study the effects that saturation of the surface with C₆₀⁺ in reaching sputter equilibrium may have had on the measured abundances. By comparison, there are very minor amounts of pure Si_m⁺ clusters produced during C₆₀⁺ sputtering of silica (SiO₂) and various silicate minerals. The abundances for clusters heavier than Si₂⁺ are very small compared to the case where Si is the target.The data reported here suggest that Si_m⁺ and Si_mC_n⁺ cluster abundances may be consistent in a qualitative way with theoretical modelling by others which predicts each carbon atom to bind with 3-4 Si atoms in the sample. This experimental data may now be used to improve theoretical modelling.     

Secondary ion emission from Si bombarded with large Ar cluster ions under UHV conditions

Si was bombarded with size-selected 40 keV Ar cluster ions and positive secondary ions were measured using the time-of-flight technique under high and ultra-high vacuum (HV and UHV respectively) conditions. Si⁺ ions were main species detected under the incidence of 40 keV Ar cluster ions, and the yields of Si cluster ions such as Si₄⁺ were also extremely high under both conditions. On the other hand, oxidized secondary ions such as SiO⁺ were detected with high intensity only under the HV condition. The yield ratios of oxidized ions decreased in UHV to less than 1% of their values in HV. The effect of residual gas pressure on Si cluster ion yields is relatively low compared to oxidized ions, and the UHV condition is required to obtain accurate secondary ion yields.     

The investigation of ion implanted layers by scanning electron microscopy

SEM signals were used to image ion-implanted surfaces and to quantitatively analyze implanted layers. Silicon was used as substrate material for implantation, but some measurements on GaAs are also reported. Various ion species were implanted and the dependence of the signals upon fluence was studied. Electron backscattering and absorbed current were found to be influenced by the radiation damage rather than by the species of implanted ions. The degree of damage could be characterized by absorbed current measurements. The ion fluence necessary to produce amorphous layers was determined for N, P, and As in Si using this technique. This fluence was found to correspond to an energy deposition of 2.8×10²¹ keV/cm³. For the detection of very small amounts of implanted ions by characteristic X-rays, the electron energy must be fitted to the penetration depth of the ions under conditions maintaining reasonable excitation cross sections. The lowest value of the normalized detectability obtained in our measurements was 2.5×10¹³ Ions/cm² for 45 keV phosphorus.     

Structure of self-implanted silicon annealed under enhanced hydrostatic pressure

Implantation of any ions at a sufficiently high dose and energy (E) into single-crystalline Si leads to the creation of amorphous Si (aSi), with damages peaking near the projected range (R _p) of implanted species. Enhanced hydrostatic pressure (HP) at a high temperature (HT) influences the recrystallization of aSi. The structure of self-implanted Czochralski silicon (Si⁺ dose, D=2×10¹⁶ cm^?2, E=150 keV, R _p=0.22 μm) processed for 5 h at 1400 or 1520 K under HPs up to 1.45 GPa was investigated by X-ray, secondary ion mass spectrometry and photoluminescence methods. The implantation of Si produces vacancies (V) and self-interstitials (Si_i). Vacancies and Si_is form complex defects at HT–HP, also with contaminants (e.g. oxygen, always present in Czochralski silicon). The mobility and recombination of V and Si_i as well as the kinetics of recrystallization are affected by HP, thus processing at HT–HP affects the recovery of aSi.     

Letter to the editor

Abstract

According to a molecular dynamics (MD) technique, radiation effects of an amorphous Pd₈₀Si₂₀ alloy induced by N ion were simulated in order to study its structural change observed experimentally before and after irradiation. This experimental structural change was well reproduced by the isobaric MD simulation and by a proposed model. Simultaneously, the formation process of radiation-induced damage was investigated in the simulation.     

Formation of the buffer layer of silicon suboxides SiOx in the Si/SiO2 low-dimensional heterosystem after Si+ ion implantation: Si L2, 3 X-ray emission spectra

Nanosized heterostructures n-Si/SiO₂ with different thicknesses of the oxide film (20, 500 nm) after implantation by Si⁺ ions with energies of 12 and 150 keV have been investigated using Si L _{2, 3} X-ray emission spectroscopy (the Si 3d3s → Si 2p _{1/2, 3/2} electronic transition). The ion-beam modification of the interface has been revealed and studied for the heterostructure with a silicon dioxide thickness of 20 nm. An analysis of the Si L _{2, 3} X-ray emission spectra has demonstrated that the Si⁺ ion implantation leads to the self-ordering of the structure of the initially amorphous SiO₂ film 20 nm thick due to the effect of high doses. A mechanism of ion-beam modification of the insulator-semiconductor interface has been proposed. No substantial transformation of the atomic and electronic structures of the heterostructure with a silicon dioxide thickness of 500 nm has been revealed after the ion implantation.     

The study of ion mixed amorphous carbon films on single crystal silicon by C ion implantation

Amorphous-carbon (a-C) films were deposited on a single-crystal silicon substrate by vacuum vapor deposition system and these amorphous carbon films were implanted with 110 keV C⁺ at fluences of 1 × 10¹⁷ ions/cm². The effect of ion mixing on the surface morphology, friction behavior and adhesion strengths of amorphous carbon films was examined making use of atomic force microscopy (AFM), ball-on-disk reciprocating friction tester, nano-indentation system and scanning electron microscope (SEM). The changes in chemical composition and structure were investigated by using X-ray photoelectron spectroscopy (XPS). The results show that the anti-wear life and adhesion of amorphous carbon films on the Si substrates were significantly increased by C ion implantation. The SiC chemical bonding across the interface plays a key role in the increase of adhesion strength and the anti-wear life of amorphous carbon film. The friction and wear mechanisms of amorphous carbon film under dry friction condition were also discussed.     

利用Keating模型计算Si（1-x）Gex及非晶硅的拉曼频移

利用Keating模型计算了Si_（1-x）Ge_x合金中Si—Si,Ge—Ge和Si—Ge三种振动模态的拉曼频移,计算分别获得Ge浓度为01,05和09时,Si—Ge的振动拉曼频移分别为40275,41339和38815 cm^-1,这些结果与文献的实验结果符合,证明了Keating模型建立的关于原子振动模型是有效的,并可以利用拉伸压缩和相邻原子键之间弹性系数变化获得处于应变状态的拉曼光谱频率.利用Kea 关键词： Keating模型 拉曼光谱 （1-x）Ge_x')" href="#">Si_（1-x）Ge_x 非晶硅     

Solid-state NMR investigations of Si-29 and N-15 enriched silicon nitride

We compare ²⁹Si magic-angle spinning (MAS) nuclear magnetic resonance (NMR) spectra from the two modifications of silicon nitride, α-Si₃N₄ and β-Si₃N₄, with that of a fully (²⁹Si, ¹⁵N)-enriched sample ²⁹Si₃¹⁵N₄, as well as ¹⁵N NMR spectra of Si₃¹⁵N₄ (having ²⁹Si at natural abundance) and ²⁹Si₃¹⁵N₄. We show that the ¹⁵N NMR peak-widths from the latter are dominated by J(²⁹Si–¹⁵N) through-bond interactions, leading to significantly broader NMR signals compared to those of Si₃¹⁵N₄. By fitting calculated ²⁹Si NMR spectra to experimental ones, we obtained an estimated coupling constant J(²⁹Si–¹⁵N) of 20 Hz. We provide ²⁹Si spin-lattice (T₁) relaxation data for the ²⁹Si₃¹⁵N₄ sample and chemical shift anisotropy results for the ²⁹Si site of β-Si₃N₄. Various factors potentially contributing to the ²⁹Si and ¹⁵N NMR peak-widths of the various silicon nitride specimens are discussed. We also provide powder X-ray diffraction (XRD) and mass spectrometry data of the samples.     

The study of the width for intermediate resonances in the 27Al(d,p)28Al, 27Al(d, α)25Mg, 31P(d,p)32P and 31(d, α)29Si reactions

The protons and α-particles from the reactions ²⁷Al(d, p)²⁸Al(d, α)²⁵Mg, ³¹P(d, p)³²P and ³¹P(d, α)²⁹Si were measured and analyzed with the channel cross correlation function and auto-correlation function to determine the correlating numbers N_d and average width 〈Γ_μ〉. With these values, the theoretical intermediate widths were calculated to be 119 ± 30 keV in the ²⁹Si nucleus and 249 ± 46 keV in the ³³S nucleus, which were in good agreement, within the errors, with the present experimental results of 185 ± 37 keV in ²⁹Si and 204 ± 24 keV in ³³S.     

Ion-beam-assisted MBE growth of semi-spherical SiGe/Si nano-structures

Semi-spherical SiGe/Si nano-structures of a new type are presented. Epitaxial islands of 30–40 nm in base diameter and 11 nm in height and having a density of about 6×10¹⁰ cm^-2 were produced on (001) Si by molecular beam epitaxial growth of Si/Si_0.5Ge_0.5 layers with in situ implantation of 1-keV As⁺ ions. It was found by cross-section transmission electron microscopy that the islands have a complicated inner structure and consist of a micro-twin nucleus and semi-spherical nano-layers of various SiGe compositions. The nature of the surface patterning is interpreted by stress relaxation through implantation-induced defects. Received: 12 July 2001 / Accepted: 4 September 2001 / Published online: 2 October 2001