Monochromatic blue-green and red emission of rare-earth ions in MgGa2O4 spinel

Pr³⁺-activated blue-green phosphor and Eu³⁺-activated red phosphor hosted in MgGa₂O₄ spinel have been prepared by a gel-assisted high-temperature calcination process, respectively. Both anion and cation vacancies in the host were formed by decreasing the Mg concentration in the reaction source. The induced vacancies provide possibility of the accommodation of the doped rare-earth ions with larger atomic size in the highly symmetrical spinel structure. Due to the efficient energy transfer from the spinel host to the sole 4f sub-level of the doped rare earths, monochromatic emissions with high efficiency can be obtained to allow the phosphors to find applications in solid-state laser device and other phosphors excited under low energy. The corresponding spectroscopic transition mechanism has been proposed in this work.     

Near-infrared luminescence of OH and Cl doped Bi4Ge3O12 crystals

OH⁻ and Cl⁻ doped Bi₄Ge₃O₁₂ (BGO) single crystals had been grown by Vertical Bridgman (VB) method. The structure of these crystals was determined by XRD, the transmittance and emission spectra in near infrared region (NIR) were measured at room temperature. 5% OH⁻ doped BGO shows a significant emission band peaking around 1181 nm under 808 nm laser diodes (LDs) excitation, and the 5% Cl⁻ doped BGO exhibits a relatively weak emission band as well. 100% and 5% OH⁻ doped BGO show noticeable emission band centered at about 1346 nm under 980 nm LDs excitation.     

甲酸根离子均匀掺杂的卤化银中的光电子特性

甲酸根离子(HCO-2)作为一种“空穴-电子转换剂”掺杂在卤化银中,可以提高潜影形成过程中光电子的利用率,俘获光生空穴,减少潜影形成过程中电子-空穴复合所造成的电子损失;同时还可以释放一个电子,提高感光效率。采用微波吸收介电谱检测技术,检测了不同浓度甲酸根离子均匀掺杂的立方体AgCl和AgBr乳剂在脉冲激光作用下所产生的光电子衰减信号。通过比较光电子的衰减时间和寿命,分析了甲酸根离子的空穴陷阱效应对立方体AgCl和AgBr乳剂中光电子衰减行为的影响,并得到了最佳均匀掺杂浓度（10^-5mol/molAg）。     

Spectroscopic properties of OH doped and Bi-rich Bi4Ge3O12 crystals by vertical Bridgman method

OH⁻ doped and Bi-rich Bi₄Ge₃O₁₂ (BGO) single crystals were grown by Vertical Bridgman (VB) method. The structure of these crystals was determined by XRD, and the emission spectra in visible and near infrared region (NIR) were measured at room temperature. The emission spectrum of Bi-rich BGO has extra peaks at 385, 367 and 357 nm, Bi-rich BGO after annealing in Ar at 500 °C for 5 h shows a significant emission band peaking around 1170 nm under 808 nm laser diodes (LDs) excitation, and OH⁻ doped BGO shows a noticeable emission band centered at about 1346 nm under 980 nm LDs excitation. A brief discussion is presented.     

Ranges and range theories

Irradiation of ionic crystals causes the displacement of lattice ions and the formation of primary defects in the form of vacancies and interstitials. At high temperatures when these defects are mobile secondary defect reactions will produce various types of defect clusters. In some compounds clustering can lead to the formation of small particles of the metal constituent, referred to as colloids. A well-known example of this effect occurs in the alkali halides, where the colloids form as the result of large-scale aggregation of the primary F centres, so that the metallic region in this case derives from primary defects on the anion sublattice. The latent image of the photographic process in silver halides is also an example of the formation of a small metal colloid, and other crystals such as hydrides and azides can also be partially decomposed into metallic particles by irradiation with ionizing radiation. Recently metal colloids have been found as a result of displacement damage in the oxides Li₂ and Al₂O₃. This article reviews some of the background properties of colloids in ionic crystals and describes some examples of colloid formation by irradiation. Colloid growth in NaCl is described in more detail, since recent experimental and theoretical work provides a more complete picture than in other compounds. The Jain-Lidiard theory explains many features of the behaviour observed during high dose irradiation at high temperatures, and some comments are made about ways in which the theory could be developed further.     

Cd1-xZnxTe晶体退火条件的选择及Zn压对退火晶体质量的影响

采用传统Bridgman方法和加入accelerated crucible rotation technique的Bridgman(缩写为ACRT-B)方法生长的Cd_1-xZn_xTe(x=0.04)晶体中存在有点缺陷、位错、杂质和Te沉淀等缺陷.为了减少甚至消除这些缺陷,必须将生长后的CdZnTe晶片在Cd气氛下退火.从Cd-Te和Cd_0.96Zn_0.04Te的PT相图出发,详细讨论了CdZnTe晶体的气固平衡条件,并 关键词： 1-xZn_xTe')" href="#">Cd_1-xZn_xTe 退火 气-固平衡     

Origin of the 330 nm absorption band and effect of doping Yb in LiYF4 crystals

The electronic structures of LiYF₄ (YLF) crystals containing F color center (YLF-F) and Yb doped YLF crystals (Yb³⁺:YLF, Yb²⁺:YLF) are systematically studied within the framework of the density functional theory. The calculated results indicate that the 330 nm absorption band originates from the F center in YLF crystals. Thus the doping of Yb³⁺ can weaken the 330 nm absorption band by competing with F vacancies in capturing free electrons arising after γ-irradiation and change to Yb². By analyzing the lattice relaxation and the electronic structure of YLF containing Yb²⁺, we can reasonably believe that once Yb²⁺ is formed in YLF crystal, its compensating hole will turn out to be shared by two F⁻ nearest to Yb²⁺ forming a diatomic fluoride molecular ion () perturbed by Yb²⁺, or to say V_F color center. According to the molecular-orbital linear combination of atomic orbital (MO-LCAOs) theory, compared to the alkali halides, e.g. LiF, the in V_F center in LiYF₄ peaks at about 340 nm, which is in agreement with the experimental results.     

Single crystal growth and characterizations of iron arsenide superconductor BaFe2-xNixAs2（0.0≤x≤0.12）

A series of big single crystals of BaFeFe_2-xNi_xAs₂ have been prepared by the FeAs self-flux method, with nominal nickel doping x = 0--0.12. The dimensions of the cleaved crystals are over 10~mm along ab plane and ～ 2~mm in maximum along the c direction. The measurements of x-ray diffraction, electrical resistance and magnetic property are carried out on the crystals. For the undoped parent compound BaFe₂As₂, both resistance and magnetization data display an anomaly associated with spin density wave and/or structural phase transition, with the transition temperatures at ～ 138~K. For Ni-doped BaFe_2-xNi_xAs₂ crystals, the superconducting critical temperature T_c ranges from 4.3~K for x=0.06 sample to 20~K for the optimally doped x=0.10 crystal.     

Effect of quenching on the electrical conductivity of doped KCl crystals

Electrical conductivity and optical absorption of divalent cation and anion doped KCl crystals have been measured before and after quenching from 750 °C. The conductivity after quenching is found to decrease in undoped and cation doped crystals while it increases in the anion doped crystals. This is due to higher coagulation rate of cation impurities as compared to anion impurities. Since the divalent impurities diffuse in the form of impurity-vacancy complexs, the higher mobility of cation vacancies (which form dipoles with divalent cation impurities) accounts for the higher aggregation rate of the cation impurities. The aggregation rate, during annealing after quenching, has also been found to depend on concentration.The author is indebted to Prof. H. N.Bose for helpful discussions. Thanks are also due to Dr. M. L.Mukherjee for providing the crystals.     

Halleffekt-messungen an reinen und kupfer dotierten zinkoxidkristallen

The electrical conductivity and Hall effect of pure and copper doped crystals have been measured from 5 to 300 K. The results have been interpreted in terms of high compensation of the donors. Crystals heated in vacuum at 1500 K show impurity band conduction at low temperature. The behaviour of the crystals can be understood by means of oxygen vacancies occupied by one or by two electrons.     

Middle-infrared luminescence of praseodymium ions in silver halide crystals and fibers

The luminescence of AgBr, AgCl, and AgClBr crystals and fibers doped with Pr3+ ions was investigated in the middle-infrared spectral range. We measured the absorption, emission, and kinetic parameters over a broad temperature range. Strong luminescence in the spectral range 4-5.5 microm was observed for the first time to our knowledge in silver halide crystals and fibers at room temperature. No noticeable differences were observed between the crystals and the fibers. We calculated various optical parameters for Pr:AgBr and Pr:AgCl crystals, using the Judd-Ofelt approximation. Both the measured results and the calculated parameters indicate that these doped crystals and fibers would be good candidates for the fabrication of mid-IR solid-state lasers or fiber lasers.     

The effect of annealing on the room temperature ferromagnetism in co-sputtered In2O3: C thin films

In this paper, we report investigation of room temperature (RT) ferromagnetism in In₂O₃ (InO) thin films doped with carbon prepared by the co-sputtering method. InO thin films both undoped and C doped with varied thicknesses in the range of 45 to 80 nm were synthesized on Si substrates with varied C concentrations. The carbon concentration was varied from 1.6 to 9.3 at%. The undoped InO films showed no trace of ferromagnetism. Carbon doped films (InO:C) exhibited ferromagnetism at RT, which was of the orders of 10⁻⁵ emu and varied strongly with C concentrations. It is observed that the magnetization reached a maximum value of 5.7 emu/cm³ at 4 at% C. Annealing of the InO:C films in an oxygen environment resulted in a decrease in the magnetization, indicating the crucial role of oxygen vacancies in the films. It is concluded that the oxygen vacancies were important and compete with C substitution for the RT ferromagnetism.     

Photo- and electroluminescence of nitrogen isoelectronic traps in GaAs1–xPx

The variation with temperature of the charge on the surface of NaCl single crystals has been measured directly by means of vibrating capacitor probe. The charge is negative at room temperature, in agreement with theory based on values of the free energy of vacancy formation, decreases with increase of temperature in two stages to a zero value at the isoelectric temperature, and then becomes positive. Values of isoelectric temperature obtained on surfaces are consistent with those obtained by experiments on charged dislocations, which suggests that surfaces could be used to obtain accurate values of the free energy of formation of cation and anion vacancies.     

Depth of electron traps in silver halides by the thermoluminescence spectra method

The thermoluminescent emissions of AgCl and AgBr crystals have been investigated as excited at liquid N₂ temperature with UV light. The spectra of both halides were found to exhibit a single glow peak, with maxima at 140 and 124 ° K respectively. Analysis of the data yields an activation energy of 0.13 eV for AgCl and 0.096 for AgBr. The trapping centres are identified with Frenkel defects and evidence is obtained in favour of the carrier trap situation presupposed by the Mitchell and Mott model for the latent photographic image formation.     

Additive coloring rate and intensity for pure and doped fluorite crystals

The mechanism of the additive coloring of calcium fluoride crystals, both pure and doped with I- and III-group elements, has been investigated. The coloring rate and intensity and the dependences of these parameters on the experimental conditions, vapor mixture pressure, and temperature have been experimentally determined. It is shown that the concentration of anion vacancies/electrons that can be introduced into crystals is in the range of 10¹⁷–10¹⁸ cm⁻³; in crystals with a high concentration of rare earth ions, the limiting concentration can be an order of magnitude higher.     

A high-stability medium based on CaF<Subscript>2</Subscript>:Na crystals with colloidal color centers: I. Photothermochemical conversion of colloidal color centers in CaF<Subscript>2</Subscript>:Na crystals

Photothermochemical conversion of simple color centers (which include from one to four anionic vacancies) and highly aggregated ones in additively colored crystals of calcium fluoride doped by sodium is studied. The annealing of crystals with a low sodium content in a reducing atmosphere (additive coloration) leads to the predominant formation of simple color centers, which convert into highly aggregated centers under the joint action of heating and irradiation in absorption bands of simple centers. The irradiation of highly aggregated centers into their absorption bands and simultaneous heating causes these centers to convert into simple centers. The additive coloration of crystals with a relatively high sodium content leads to the predominant formation of highly aggregated centers. The heating of these crystals along with the irradiation in absorption bands of highly aggregated centers causes these centers to convert into simple centers. The formation of different color centers in the course of additive coloration of crystals with different impurity content and different results of photothermochemical conversion of centers in these crystals are connected with the dual action of impurities. Anion vacancies, which compensate the charge of the impurity alkali metal, facilitate the aggregation of color centers. At the same time, the alkali impurity stabilizes simple color centers.     

Ageing of AgCl/Cd nuclear track detectors monitored by luminescence spectroscopy

Abstract

Solid-state nuclear track detectors, made of Cd doped AgCl crystals, are commonly prepared by rolling into the form of thin foils. Subsequent long-term relaxation is however needed to obtain good quality tracks. The present communication shows for the first time that this detector “ageing” is reflected in lowtemperature (77 K) luminescence spectra. Maximum of the emission band shows a slow (lasting for ～ 100 hours) blue shift, the magnitude of which (as much as 25 nm) depends on the compression ratio caused by the rolling. The shift is believed to be due to the rearrangement of Cd⁺⁺ ions around freshly introduced dislocations. This finding opens the possibility of monitoring non-destructively the process of detector ageing and to determine the minimum time required for saturation.     

First stage f centre formation in pure and doped KCl crystals by room temperaure X-irradiation

The electrical conductivity and optical absorption of potassium chloride crystals, pure and doped with divalent cation impurities, have been measured before and after X-irradiation at room temperature. The concentration of free positive ion vacancies at room temperature has been calculated from conductivity for each crystal before irradiation and is found to be much less than the first stage F centre concentration. This shows that both free and associated positive ion vacancies are the latent source of F centres in the first stage colouration. Pb^{+ +} ions trap electrons producing Pb^{+ +} and Pb⁰ centres and making free the associated cation vacancies. Such centres are not produced in Ca-doped crystals where impurity-vacancy complexes trap F centres producing Z centres. The higher ratio of F centres to positive ion vacancies in Pb-doped crystals indicates that free cation vacancies are more effective in producing F centres. However, the concentration of divalent cations is found to decrease in both the crystals after irradiation, the decrease being more in Ca-doped crystals.The author is indebted to Prof. H. N. Bose for helpful discussions. Thanks are also due to Dr. M. L. Mukherjee for providing the crystals.     

甲酸根离子掺杂的AgCl乳剂增感后的光电子特性研究

甲酸根离子作为一种“空穴－电子转换剂”掺杂在卤化银中可以提高潜影形成过程中光电子的利用率。将不同位置甲酸根离子掺杂的立方体AgCl乳剂又经相同条件的硫加金或感绿染料增感后，采用微波吸收介电谱检测技术对样品在脉冲激光作用下所产生的光电子衰减信号进行检测，通过分析光电子的衰减特性，发现甲酸根离子仍然能发挥其空穴陷阱效应，而且自由光电子的衰减时间和寿命与未增感的掺杂乳剂随掺杂位置的变化趋势一致。     

Investigation of photoelectron action in cubic AgCl emulsion doped with formate ions

In recent years, the formate ion （HCO2^-） as a kind of hole-to-electron converter has attracted much attention of photographic researchers. The formate ions can trap photo-generated holes, eliminate or reduce the electron loss caused by electron-hole recombination in latent image formation process. Through the hole-to-electron conversion, it can also release an extra electron or electron carrier, improving photosensitivity. In this paper the microwave absorption and dielectric spectrum detection technique is used to detect the time evolution behaviour of free photoelectrons generated by 35ps laser pulses in cubic AgCl emulsions doped with formate ions. The influence of different doping conditions of formate ions on the photoelectron decay kinetics of AgC1 is analysed. It is found that when the HCO2^- content is 10^-3mol/mol Ag and the doping position is 90% the electron decay time and lifetime reach their maxima due to the efficient trap of holes by formate ions.