共查询到19条相似文献,搜索用时 62 毫秒
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用气相输运平衡技术成功地制备出了近化学计量组分的Er∶LiNbO3晶体,系统 地研究了该 晶体的吸收边移动、可见—红外透射谱、荧光光谱的物理特性.与同成分Er∶LiNbO3 sub>晶体 相比, 近化学计量组分Er∶LiNbO3晶体的吸收边出现了“蓝移”;OH- sup>吸收带明显减弱 ;在可见—近红外波段呈现出更高的透过率;同时Er3+离子的发光强度也明显 提高. 这些结果表明近化学组分的Er∶LiNbO关键词:
近化学组分掺铒铌酸锂晶体
- 吸收带')" href="#">OH-吸收带
透射谱
荧光光谱 相似文献
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室温下,将能量为250 keV He+ 离子注入z 切钽酸锂单晶,注量范围5.0x1014~5.0x1016 He+/cm2,应用三维轮廓仪、X射线衍射(XRD)、紫外可见(UV-Vis ) 光学吸收谱对未注入和注入样品进行了表征和分析。分析结果表明,在注量达到5.0x1016He+/cm2 时,样品表面出现大量凸起条纹,同时晶格沿着[001] 方向出现明显肿胀,吸收边则表现出明显的注量相关性。注入样品在空气中放置60 d后,最高注量的样品表面原来凸起的条纹变为细长的裂纹,晶格应变及光学吸收边均出现较大的恢复。讨论了样品表面形貌、晶格应变和光学吸收边与He 行为的关系。The effects of 250 keV He + implantation in the fluence from 5.0x1014 to 5.0x1016 He+/cm2 on lithium tantalate at room temperature were investigated by 3D surface profiler, XRD and UV-Vis optical absorption spectroscopies.The experimental results show that a large number of raised stripes appear on the surface of the sample and the significant lattice swelling occurs along the direction [ 001 ] at the fluence of 5.0x1016 He+/cm2. The dependence of changes absorption edge on the fluences was revealed. After the samples had been exposed to the air for 60 days, the raised stripes on the surface have evolved into narrow cracks. Furthermore, the lattice strain and the optical absorption edge has also recovered dramatically. The relationship between surface morphology, lattice strain, optical absorption edge and behaviorof He-ions was discussed. 相似文献
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利用第一性原理研究了Mn:LiNbO3晶体的电子结构和光学性质。结果表明,Mn掺杂产生了杂质能级,主要由Mn的d态轨道贡献。杂质能级与导带之间的带隙小于理想LiNbO3晶体导带与价带之间宽度,降低了电子跃迁所需能量。同时,掺杂也降低了各原子的电子轨道能量。晶体中最高占据轨道不再是O的2p轨道,而是Mn的d 轨道。掺杂离子在晶体中同时充当电子的施主与受主。静态介电常数在掺杂后有明显的增大。Mn的掺杂使晶体在可见光区域的光学性质产生变化,并使晶体的吸收谱在可见光区域产生吸收峰。 相似文献
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利用第一性原理研究了Mn:LiNbO3晶体的电子结构和光学性质。结果表明,Mn掺杂产生了杂质能级,主要由Mn的d态轨道贡献。杂质能级与导带之间的带隙小于理想LiNbO3晶体导带与价带之间宽度,降低了电子跃迁所需能量。同时,掺杂也降低了各原子的电子轨道能量。晶体中最高占据轨道不再是O的2p轨道,而是Mn的d 轨道。掺杂离子在晶体中同时充当电子的施主与受主。静态介电常数在掺杂后有明显的增大。Mn的掺杂使晶体在可见光区域的光学性质产生变化,并使晶体的吸收谱在可见光区域产生吸收峰。 相似文献
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本文利用第一性原理研究了Mn:Fe:LiNbO3晶体、Mn:Ru:LiNbO3晶体和Fe:Ru:LiNbO3晶体的电子结构和光学性质.通过对电子结构的分析,发现杂质能级的深浅与掺杂元素原子序数有关.原子序数越大,杂质能级越深.通过对Mn:Fe:LiNbO3晶体、Mn:Ru:LiNbO3晶体和Fe:Ru:LiNbO3晶体... 相似文献
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本文利用第一性原理研究了 晶体、 晶体和 晶体的电子结构和光学性质。通过对电子结构的分析,发现杂质能级的深浅与掺杂元素原子序数有关。原子序数越大,杂质能级越深。通过对 晶体、 晶体和 晶体的吸收谱进行分析,并与单掺杂 晶体的吸收谱进行比较,发现双掺杂在可见光区域吸收率明显提高,约为单掺杂的3倍。 晶体分别在380nm和590nm处形成吸收峰, 晶体可见光区域吸收率比 以及 晶体高,分别在450nm附近和660nm附近出现吸收峰, 晶体在430nm到600nm之间区域都有较高的吸收率,并在770nm的长波范围有一小的吸收峰。计算结果与双色全息存储(双光子全息存储)所用记录光的波长相符。 相似文献
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We report measurements of the laser induced breakdown threshold in lithium tantalate with different number of pulses delivered from a chirped pulse amplification Ti: sapphire system. The threshold fluences were determined from the relation between the diameter D2 of the ablated area and the laser fluence F0. The threshold of lithium tantalite under single-shot is found to be 1.84 J/cm2, and the avalanche rate was determined to be 1.01 cm2/J by calculation. We found that avalanche dominates the ablation process, while photoionization serves as a free electron provider. 相似文献
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Summary The infra-red spectra of P- and B-doped hydrogenated amorphous silicon films grown by means of an evaporation method have
been measured. The SiH
n
stretching and wagging (or rocking) absorption bands have been examined by varying the dopant content measured by Auger analysis.
On increasing the doping, a reduction of hydrogen content has been noticed with an enhancing of zeroth-order moment of Si-H
stretching at the expense of the Si-H2 one. Analogous results for B-doped films have been observed. Since no frequency shift towards higher frequencies of the stretching
bands has been measured, the observed changes of the intensity of the bands have been attributed to structure modifications
rather than to variations in the electronegativity in the neighbours of the silicon atom. In particular, the monohidride configuration
with an overall decrease in the number of defects seems to be favoured by the deposition technique adopted.
This work was supported in part by GNSM-CNR, M.P.I. and CNR ?Progetto Finalizzato Energetica?. 相似文献
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Lihong Shi Wenbo Yan Xiaochun Li Di Zhao Jingjun Xu Shaolin Chen Ziheng Huang Wanlin Zhang 《Solid State Communications》2005,135(4):251-256
The Raman scattering spectra of lithium tantalate crystals with different compositions were investigated. The comparison of the Raman data obtained for the congruent and the near-stoichiometric crystals reveals some differences in the shape and the number of Raman peaks, which lead to a new assignment of the long-wavelength optical phonons. And quantitative relationships between the linewidth of Raman peaks (142 cm−1 for E-phonon and 861 cm−1 for A1-phonon) and the crystal composition were firstly presented. Two local Raman lines, 278 and 750 cm−1, were found for the congruent crystals and attributed to the intrinsic defects, Li vacancy and anti-site Ta ion, respectively. 相似文献
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S.M. Kostritskii P. Bourson M. Aillerie M.D. Fontana D. Kip 《Applied physics. B, Lasers and optics》2006,82(3):423-430
Nominally pure lithium tantalate (LiTaO3) crystals with different chemical compositions were characterized by Raman scattering, infrared reflection, and infrared
absorption spectroscopy. In these crystals specific phonon bands are correlated to electro-optic and nonlinear optical properties.
The electro-optic and nonlinear optical coefficients were determined and the data are compared with literature values obtained
by direct measurements. Our measurements are in good accordance with the literature data, which opens up a new possibility
for fast and easy estimation of electro-optic and nonlinear optical performance of newly developed LiTaO3-based materials modified by stoichiometry.
PACS 42.70.Mp; 78.20.Jq; 78.30.-j 相似文献
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利用基于密度泛函的第一性原理的计算方法,研究了Co单掺及Co和Zn共掺LiNbO_3晶体的电子结构和吸收光谱.研究显示,各掺杂体系铌酸锂晶体的带隙均较纯铌酸锂晶体变窄. Co:LiNbO_3晶体禁带宽度为3.32 eV; Co:Zn:LiNbO_3晶体, Zn的浓度低于阈值或达到阈值时,禁带宽度分别为2.87或2.75 eV. Co:LiNbO_3晶体在可见-近红外光波段2.40, 1.58, 1.10 eV处形成吸收峰,这些峰归结于Co 3d分裂轨道的跃迁;加入抗光折变离子Zn~(2+),在1.58, 1.10 eV处的吸收峰增强,可以认为Zn~(2+)与Co~(2+)之间存在电荷转移,使e_g轨道电子减少,但并不影响t_(2g)轨道电子.结果表明,晶体中的Co离子在不同共掺离子下可充当深能级中心(2.40 eV),或可充当浅能级中心(1.58 eV),两种情况下,掺入近阈值的Zn离子均有助于实现优化存储. 相似文献
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The dielectric function of MgO-doped lithium niobate (LN:Mg) has been calculated, which depends on the angular frequency and Mg concentration. On the basis of our experimental data and the defect structure models, the substitution of Li ions by Mg ions will strongly influence the dielectric properties of LN:Mg. 相似文献