Guest-framework interaction in type I inorganic clathrates with promising thermoelectric properties: on the ionic versus neutral nature of the alkaline-earth metal guest A in A8Ga16Ge30 (A=Sr, Ba)

Periodic density functional calculations using pseudopotentials and a local basis set were performed on the type I clathrates A(8)Ga(16)Ge(30) (A=Sr, Ba). Both are known to show promising thermoelectric properties. Ab initio wave functions were analyzed within the framework of the quantum theory of atoms in molecules. This enabled us to analyze both the charge transfer and bonding properties of the clathrate from a rigorous quantum mechanical viewpoint. The Ba and Sr centers were found to be largely ionic (charge: ca. +1.7 e) both in the smaller 20-atom and in the larger 24-atom cages, consistent with a Zintl-phase view of these type I clathrates. The assertion that the Sr atoms in the different cages have similar oxidation states is shown to be consistent with multiwavelength diffraction experiments on Sr(8)Ga(16)Ge(30); while the assertion of ionicity of the Sr center is supported by the observation that the adsorption edge lies close to that previously found in the Sr K-edge XANES spectra of Sr(OH)(2).8 H(2)O. As such, this work contradicts previous experimental and theoretical studies that claim that the guest atoms are neutral. We show that the discrepancy is related to the definitions used for electron transfer. Definitions based on electron displacement (rearrangement) in space, as in previous works, do not account for the variation in shape and volume of the atomic catchment regions upon change in the number and average locations of the particles in the system. Eventually, such definitions lead to underestimation of charge transfer. The large binding energy found in earlier work for Ba and Sr in these materials is found to be consistent with a simple picture of charge transfer from the guest to the frame. Preliminary investigations on a clathrate of perfect stoichiometry appear to rule out any important relationship between the observed increase in the thermoelectric figure of merit with increasing external pressure and host-guest charge transfer.     

Crystal structures of thermoelectric n- and p-type Ba8Ga16Ge30 studied by single crystal, multitemperature, neutron diffraction, conventional X-ray diffraction and resonant synchrotron X-ray diffraction

Comprehensive single-crystal structural investigations of n- and p-type Ba8Ga16Ge30 have been carried out using multitemperature neutron and conventional X-ray diffraction as well as resonant synchrotron X-ray diffraction. The data show that the guest atom positions and dynamics are very similar in the two structures, although the barium atoms are slightly more displaced from the cage centers in the p-type structure than in the n-type structure (Deltad = 0.025 A). For both structures Fourier difference maps calculated from very high-resolution neutron diffraction data (sin theta/lambda > 2 A-1) show that the Ba nuclear density at lowest temperatures (15 K) is distributed in a torus around the crystallographic 6d site with maxima in the 24j positions. At room temperature the maxima have shifted to the 24k position. Analysis of atomic displacement parameters give Einstein temperatures of approximately 60(1) K for both structures. Thus, the fundamental difference in the low temperature thermal conductivity observed for p- and n-type Ba8Ga16Ge30 appear not to be directly related to the guest atom behavior as is commonly assumed in thermoelectric research. The neutron data and the resonant synchrotron X-ray data facilitate refinement of Ga/Ge framework occupancies. The Ga atoms have a clear preference for the 6c site with the preference being somewhat stronger for the n-type structure.     

Tb4FeGe8 grown in liquid gallium: trans-cis chains from the distortion of a planar Ge square net

The ternary germanide Tb4FeGe8 was obtained from Ga flux reactions. The crystal structure studied with single-crystal X-ray diffraction revealed the existence of an orthorhombic average substructure (Cmcm, Z=1) with cell parameters a = 4.1118(14) A, b=15.844(5) A, and c=3.9885(15) A. The refinement [I > 2sigma(I)] converged to final residuals R1/wR2 = 0.0363/0.0893. The average structure (CeNiSi2-type) consists of a 3D [Fe1/4Ge2] framework where Ge atoms form a square net and Fe atoms reside alternatively above and below it with only 1/4 occupation probability. X-ray and electron diffraction studies showed a modulation in the Ge net. The modulated structure was refined based on a 4-fold monoclinic supercell (P2(1)/n) with parameters a = 5.7315(11) A, b = 15.842(3) A, c = 11.438(2) A, and beta = 91.724(4) degrees with R1/wR2 = 0.0643/0.1735 and uncovered a severe distortion of the Ge square net. The Ge atoms are displaced to form an array of cis-trans chains. The Ge-Ge distances within these chains are distinctively bonding, whereas those between the chains are nonbonding. Results of the electronic structure calculations and magnetic measurements are also reported. The structural distortions found in Tb4FeGe8 cast a doubt onto the correctness of many of the reported REM1-xGe2 disordered compounds and call for reinvestigation.     

The distinction of gallium(I) tetrachloroaluminate,Ga[AlCl4], from gallium dichloride

Ga[AlCl₄] is obtained as single crystals via the reduction of gallium trichloride with aluminum and slow cooling of the melt. It crystallizes in the monoclinic system, space group p2₁/n, with a = 716.4(1), b = 1017.9(2), c = 926.7(1) pm, β = 93.21(1)°. Unlike in gallium dichloride, Ga[GaCl₄]], where Ga⁺ has a dodecahedral, eight-coordinate surrounding, a 6 + 2 + 1 coordination is adopted in Ga[AlCl₄] that is similarly observed not only in Ga₂[Ga₂Br₆] and in tin (II) and lead (II) chalcogenides but also in (the almost isotypic) K[AlCl₄].     

Polyanionic gallium hydrides from AlB2-type precursors AeGaE (Ae = Ca, Sr, Ba; E = Si, Ge, Sn)

The quaternary hydrides (deuterides) SrGaGeH(D), BaGaSiH(D), BaGaGeH(D), and BaGaSnH(D) were obtained by investigating the hydrogenation behavior of AeGaE intermetallic compounds (Ae = Ca, Sr, Ba; E = Si, Ge, Sn), and structurally characterized by powder X-ray and neutron diffraction as well as solid state (1)H NMR investigations. The new main group metal/semimetal hydrides were found to crystallize with the simple trigonal SrAlSiH structure type (space group P3m1, Z = 1, a = 4.22-4.56 A, c = 4.97-5.30 A) and feature a two-dimensional polyanion [GaEH](2-) that corresponds to a corrugated hexagon layer built from three-bonded Ga and E atoms. H is terminally attached to Ga. In BaGaSiD, a considerable degree of stacking disorder could be detected. Polyanions [GaEH](2-) are electron precise, and the hydrides AeGaEH display small band gaps in the range of 0.1-0.6 eV at the Fermi level. This is in contrast to the metallic precursor phases AeGaE, which are representatives of the AlB2 structure type or variants of it. Hydrogenation has only minor consequences for the metal/semimetal atom arrangement, and the induced metal-nonmetal transition is reversible for SrGaGe, BaGaSi, and BaGaGe. BaGaSnH partially decomposes into a mixture of intermetallic compounds upon hydrogen release. Desorption temperatures are above 400 degrees C.     

Isolation of the new cubic phases RE4FeGa(12-x)Ge(x) (RE = Sm,Tb; x = 2.5) from molten gallium: single-crystal neutron diffraction study of the Ga/Ge distribution

The compounds RE4FeGa(12-x)Ge(x) (RE = Sm, Tb) were discovered in reactions employing molten Ga as a solvent at 850 degrees C. However, the isostructural Y4FeGa(12-x)Ge(x) was prepared from a direct combination reaction. The crystal structure is cubic with space group Imm, Z = 2, and a = 8.657(4) A and 8.5620(9) A for the Sm and Tb analogues, respectively. Structure refinement based on full-matrix least squares on F(o)2 resulted in R1 = 1.47% and wR2 = 4.13% [I > 2(I)] for RE = Sm and R1 = 2.29% and wR2 = 7.12% [I > 2(I)] for RE = Tb. The compounds crystallize in the U4Re7Si6 structure type, where the RE atoms are located on 8c (1/4, 1/4, 1/4) sites and the Fe atoms on 2a (0, 0, 0) sites. The distribution of Ga and Ge in the structure, investigated with single-crystal neutron diffraction on the Tb analogue, revealed that these atoms are disordered over the 12d (1/4, 0, 1/2) and 12e (x, 0, 0) sites. The amount of Ga/Ge occupying the 12d and 12e sites refined to 89(4)/11 and 70(4)/30%, respectively. Transport property measurements indicate that these compounds are metallic conductors. Magnetic susceptibility measurements and M?ssbauer spectroscopy performed on the Tb analogue show a nonmagnetic state for Fe, while the Tb atoms carry a magnetic moment corresponding to a mu(eff) of 9.25 mu(B).     

Determination of70Ge(n,p)70Ga and74Ge(n,p)74Ga reaction cross sections for a fission neutron spectrum

The fission neutron spectrum averaged cross-sections for the reactions⁷⁰Ge(n,p)⁷⁰Ga and⁷⁴Ge(n,p)⁷⁴Ga have been determined. The averages of four determinations are, respectively, (3.10±0.30) mb and (0.00938±0.00059) mb. The present values are, to the authors' knowledge, the first experimental data on the fission averaged cross-section for these reactions.     

K and Ba distribution in the structures of the clathrate compounds KxBa16−x(Ga,Sn)136 (x = 0.8, 4.4, and 12.9) and KxBa8−x(Ga,Sn)46 (x = 0.3)

Studies of the K–Ba–Ga–Sn system produced the clathrate compounds K_0.8(2)Ba_15.2(2)Ga_31.0(5)Sn_105.0(5) [a = 17.0178 (4) Å], K_4.3(3)Ba_11.7(3)Ga_27.4(4)Sn_108.6(4) [a = 17.0709 (6) Å] and K_12.9(2)Ba_3.1(2)Ga_19.5(4)Sn_116.5(4) [a = 17.1946 (8) Å], with the type‐II structure (cubic, space group Fdm), and K_7.7(1)Ba_0.3(1)Ga_8.3(4)Sn_37.7(4) [a = 11.9447 (4) Å], with the type‐I structure (cubic, space group Pmn). For the type‐II structures, only the smaller (Ga,Sn)₂₄ pentagonal dodecahedral cages are filled, while the (Ga,Sn)₂₈ hexakaidecahedral cages remain empty. The unit‐cell volume is directly correlated with the K:Ba ratio, since an increasing amount of monovalent K occupying the cages causes a decreasing substitution of the smaller Ga in the framework. All three formulae have an electron count that is in good agreement with the Zintl–Klemm rules. For the type‐I compound, all framework sites are occupied by a mixture of Ga and Sn atoms, with Ga showing a preference for Wyckoff site 6c. The (Ga,Sn)₂₀ pentagonal dodecahedral cages are occupied by statistically disordered K and Ba atoms, while the (Ga,Sn)₂₄ tetrakaidecahedral cages encapsulate only K atoms. Large anisotropic displacement parameters for K in the latter cages suggest an off‐centering of the guest atoms.     

Ba3[Ge2B7O16(OH)2](OH)(H2O) and Ba3Ge2B6O16: novel alkaline-earth borogermanates based on two types of polymeric borate units and GeO4 tetrahedra

Two new barium borogermanates with two types of novel structures, namely, Ba(3)[Ge(2)B(7)O(16)(OH)(2)](OH)(H(2)O) and Ba(3)Ge(2)B(6)O(16), have been synthesized by hydrothermal or high-temperature solid-state reactions. They represent the first examples of alkaline-earth borogermanates. Ba(3)[Ge(2)B(7)O(16)(OH)(2)](OH)(H(2)O) crystallized in a polar space group Cc. Its structure features a novel three-dimensional anionic framework composed of [B(7)O(16)(OH)(2)](13-) polyanions that are bridged by Ge atoms with one-dimensional (1D) 10-membered-ring (MR) tunnels along the b axis. The Ba(II) cations, hydroxide ions, and water molecules are located at the above tunnels. Ba(3)Ge(2)B(6)O(16) crystallizes in centrosymmetric space group P1. Its structure exhibits a thick layer composed of circular B(6)O(16) units connected by GeO(4) tetrahedra via corner sharing, forming 1D 4- and 6-MR tunnels along the c axis. Ba1 ions reside in the tunnels of the 6-MRs, whereas Ba2 ions are located at the interlayer space. Both compounds feature new types of topological structures. Second-harmonic-generation (SHG) measurements indicate that Ba(3)[Ge(2)B(7)O(16)(OH)(2)](OH)(H(2)O) displays a weak SHG response of about 0.3 times that of KH(2)PO(4). Optical, thermal stability, and ferroelectric properties as well as theoretical calculations have also been performed.     

REMGa3Ge and RE3Ni3Ga8Ge3 (M = Ni, Co; RE = rare-earth element): new intermetallics synthesized in liquid gallium. X-ray, electron, and neutron structure determination and magnetism

New quaternary intermetallic phases REMGa(3)Ge (1) (RE = Y, Sm, Tb, Gd, Er, Tm; M = Ni, Co) and RE(3)Ni(3)Ga(8)Ge(3) (2) (RE = Sm, Gd) were obtained from exploratory reactions involving rare-earth elements (RE), transition metal (M), Ge, and excess liquid Ga the reactive solvent. The crystal structures were solved with single-crystal X-ray and electron diffraction. The crystals of 1 and 2 are tetragonal. Single-crystal X-ray data: YNiGa(3)Ge, a = 4.1748(10) A, c = 23.710(8) A, V = 413.24(2) A(3), I4/mmm, Z = 4; Gd(3)Ni(3)Ga(8)Ge(3), a = 4.1809(18) A, c = 17.035(11) A, V = 297.8(3) A(3), P4/mmm, Z = 1. Both compounds feature square nets of Ga atoms. The distribution of Ga and Ge atoms in the REMGa(3)Ge was determined with neutron diffraction. The neutron experiments revealed that in 1 the Ge atoms are specifically located at the 4e crystallographic site, while Ga atoms are at 4d and 8g. The crystal structures of these compounds are related and could be derived from the consecutive stacking of disordered [MGa](2) puckered layers, monatomic RE-Ge planes and [MGa(4)Ge(2)] slabs. Complex superstructures with modulations occurring in the ab-plane and believed to be associated with the square nets of Ga atoms were found by electron diffraction. The magnetic measurements show antiferromagnetic ordering of the moments located on the RE atoms at low temperature, and Curie-Weiss behavior at higher temperatures with the values of mu(eff) close to those expected for RE(3+) free ions.     

Effect of alkyl substitueras in hydrophobic 8-quinolinol on the extraction of gallium(III) and applications to the separation of gallium(III) from aluminum(III)

The extraction of gallium(III) with newly prepared 5-alkyloxymethyl-8-quinolinol derivatives with alkyl substituent at the 2-position in 8-quinolinol moiety has been studied. The Ga(III)-5-octyloxymethyl-8-quinolinol (HO(8)Q), Ga(III)-2-methyl-5-octyloxymethyl-8-quinolinol (HMO(8)Q), Ga(III)-2-methyl-5-hexyloxymethyl-8-quinolinol (HM-O(6)Q), and Ga(HI)-2-n-butyl-5-hexyloxymethyl-8-quinolinol (HNBO(6)Q) complexes extracted in heptane from a perchloric acid medium were Ga(O(8)Q)(3), Ga(OH)(H(2)O)(MO(8)Q)(2), Ga(OH)(H(2)O)(MO(6)Q)(2) and Ga(OH)H(2)O)(NBO(6)Q)(2), respectively. The 2-tert-butyl-5-hexyloxymethyl-8-quinolinol did not exhibit any reactivity toward gallium(III). The extraction constants for Ga(O(8)Q)(3) (K(ex) = [Ga(O(8)Q)(3)](org) [H(+)](3)/[Ga(3+)][HO(8)Q](org)(3)), Ga(OH)(H(2)O)(MO(8)Q)(2) (K(ex) = [Ga(OH) (H(2)O)(MO(8)Q)(2)](org) [H(+)](3)/[Ga(3+)][HMO(8)Q](org)(2)), Ga(OH)(H(2)O)(2)(MO(6)Q)(2) and Ga(OH)(H(2)O)(NBO(6)Q)(2), which were extracted in heptane from an acidic solution, are 10(3.21 +/- 0.12), 10(-4.24 +/- 0.16), 10(-3.84 +/- 0.16) and 10(-4.07 +/- 0.07), respectively at I = 0.1 M and 25 degrees C. HNBO(6)Q exhibited very high selectivity toward gallium(III) in the presence of aluminum(III). Even in the presence of a 100 fold excess of aluminum(III) to gallium(III) (1.43 x 10(-5) M), gallium(III) was completely extracted and the distribution ratio of aluminum(III) was found to be less than 2.0 x 10(-3).     

Polygallide RE2MGa9Ge2 (RE = Ce, Sm; M = Ni, Co) phases grown in molten gallium

The quaternary intermetallics Ce2CoGa9Ge2, Ce2NiGa9Ge2, and Sm2NiGa9Ge2 were prepared by reacting elemental metals in excess of gallium at 850 degrees C. The title compounds crystallize in the tetragonal space group P4/nmm in the Sm2Ni(Si(1-x)Ni(x))Al4Si6 structure type with cell parameters a = 5.9582(5) A, c = 15.0137(18) A, and a = 5.9082(17) A, c = 14.919(6) A, Z = 2, for Ce2CoGa9Ge2 and Sm2NiGa9Ge2, respectively. The structures are composed of covalently bonded three-dimensional networks of [CoGa9Ge2] in which the rare-earth metals fill the voids forming a 2D square net. The structures of RE2MGa9Ge2 are Ga-rich and possess extensive Ga-Ga bonding even though the Ga atoms do not form a network on their own. Magnetic susceptibility measurements for Ce2CoGa9Ge2 and Ce2NiGa9Ge2 show Curie-Weiss paramagnetism, consistent with presence of Ce(3+) ions. Magnetocrystalline anisotropy was observed for Ce2NiGa9Ge2, with the magnetically easy axis lying along the [001] crystallographic direction. A transition to an antiferromagnetic state was observed below 4 K in the easy direction of magnetization. In the magnetically hard direction of the basal plane, paramagnetic behavior was observed down to 1.8 K.     

Dynamic range optimization in SIMS analyses of arsenic and antimony dopants in silicon

Summary The application of two sample preparation techniques leads to a better understanding of the profile tailing in SIMS analyses of As and Sb distributions measured with Cs primary ions. The dynamic range in the SIMS depth profiles in terms of the detected concentration range is improved nearly by three orders of magnitude on samples with extremely high surface concentrations compared to measurements without preparation. More than five orders of magnitude are obtained. The application of the preparation techniques to As ion implants in silicon reveals a channeling tail below a concentration level of 5·10¹⁶ at/cm³ which is nearly independent of the implanted ion dose if it exceeds 5·10¹² at/cm².     

Complexes of gallium(III), antimony(III), titanium(IV), and cobalt(II) with acenaphthenequinonimine

Reactions of (2,6-diisopropylphenylimino)acenaphthenone (dpp-mian) with gallium(III), antimony(III), titanium(IV), and cobalt(II) chlorides in toluene lead to the formation of compounds of the formulas [(dpp-mian)₂GaCl₂][GaCl₄], (dpp-mian)SbCl₃, (dpp-mian)TiCl₄, and [(dpp-mian)CoCl₂]₂[CoCl₂(EtOH)₄], respectively. The complexes were characterized by IR and NMR spectra, their structure was established by X-ray crystallography.     

The Homogeneity Range of Crystalline Tris(8-hydroxyquinoline)gallium

An experimental procedure has been developed for constructing p _i –T diagrams (partial vapor pressure of the ligand-forming component–temperature) for luminescent metal complexes with symmetric organic ligands. The partial 8-hydroxyquinoline vapor pressure–temperature diagram has been constructed for tris(8-hydroxyquinoline)gallium electrophosphor (Gaq₃) in the temperature range 300–617 K at 8-hydroxyquinoline vapor pressures 10^–3–10⁴ Pa, where the homogeneity ranges of different Gaq₃ polymorphs have been determined. Structure-sensitive properties of crystalline materials can be tailored by changing synthesis conditions within the homogeneity range of a phase.