共查询到18条相似文献,搜索用时 78 毫秒
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提出了一种新颖的GaAs基p沟异质结场效应管(pHFET)概念,器件采用了In0.5Ga0.5P/GaAs异质系统及二维空穴气(2DHG)原理以改善GaAs的空穴输运特性,据此原理研制的器件可在室温下工作,其实结果为:室温下,饱和电流Idss=61mA/mm,跨导gm=41mS/mm,77K下,饱和电流Idss=94mA/mm,跨导gm=61mS/mm,预计该器件在微波和数字电路中极佳的电流密度及高频增益,因而具有良好的应用潜力。 相似文献
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InGaP/GaAs异质结价带不连续性的直接测量 总被引:1,自引:1,他引:0
用Keithley S900A 型半导体自动参数测试仪测量了用MOCVD方法生长的InGaP/GaAs异质结样品的界面C V的分布。用多项式逐段拟合的方法,转化得到界面浓度的分布,最后计算得到该体系的价带不连续性ΔEv 为316 m eV,约相当于0.69 ΔEg 相似文献
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采用栅压比谱的方法,研究了GaAs/AlGaAs异质结中二维电子气(2DEG)的回旋共振。观察到由于子能带-朗道能级耦合所引起的回旋共振峰强度随磁场的振荡行为.由回旋共振频率ωc确定了子能带电子的回旋共振有效质量m*,通过对共振峰线形的拟合,获得二维电子气浓度Ns、电子散射时间τ和迁移率μ.由子能带-朗道能级的共振耦合测量了不同栅压下的多个子能带间的能量间距.讨论了导带非线抛物性对电子回旋共振有效质量的影响 相似文献
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本文对场效应管所用材料的隔离层,δ调制掺杂层,势垒耗尽层等材料结构尺寸,异质结界面的二维电子气浓度,场效应管的夹断电压,沟道电流等以及它们之间的关系进行了计算分析,可作为材料和器件结构设计的依据. 相似文献
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设计并制备了三种不同集电结结构的A lG aInP/G aA s异质结双极晶体管,计算给出了三种集电结能带结构。通过对三种HBT的直流特性测试表明,N pN型HBT因异质集电结的导带尖峰出现电子阻挡效应;N p iN型HBT集电结引入i-G aA s层能有效克服电子阻挡效应,同时还具有拐点电压Vknee小、开启电压Voffset小、击穿电压BVCEO大等优点,但由于i-G aA s层引入增加了基区电子扩散长度,使器件电流增益有所下降。 相似文献
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依据测试得到的低源漏偏压下的AlGaAs/GaAs、AlGaN/AlN/GaN、In0.18Al0.82N/AlN/GaN异质结场效应晶体管(HFETs)的电容-电压曲线和电流-电压特性曲线,计算得到了器件的二维电子气(2DEG)电子迁移率。我们发现Ⅲ-Ⅴ氮化物HFETs器件同AlGaAs/GaAs HFETs器件的2DEG电子迁移率随栅偏压的变化趋势有很大不同。在Ⅲ-Ⅴ氮化物HFETs器件中,2DEG电子迁移率随栅偏压的变化趋势与栅长同源漏间距的比值有很大关系,但是栅长同源漏间距的比值对AlGaAs/GaAs HFETs器件的2DEG电子迁移率随栅偏压的变化趋势没有影响。这是因为Ⅲ-Ⅴ氮化物HFETs器件中存在极化梯度库仑场散射的缘故。 相似文献
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G. Coudenys I. Moeeman G. Vermeire F. Vermaerke Y. Zhu P. Van Daele P. Demeester E. Maayan B. Elsner J. Salzman E. Finkman 《Journal of Electronic Materials》1994,23(2):225-232
The shadow masked growth technique is presented as a tool to achieve thickness and bandgap variations laterally over the substrate
during metalorganic vapor phase epitaxy. Lateral thickness and bandgap variations are very important for the fabrication of
photonic integrated circuits, where several passive and active optical components need to be integrated on the same substrate.
Several aspects of the shadow masked growth are characterized for InP based materials as well as for GaAs based materials.
Thickness reductions are studied as a function of the mask dimensions, the reactor pressure, the orientation of the masked
channels and the undercutting of the mask. The thickness reduction is strongly influenced by the mask dimensions and the reactor
pressure, while the influence of the orientation of the channels and the amount of undercutting is only significant for narrow
mask windows. During shadow masked growth, there are not only thickness variations but also compositional variations. Therefore,
we studied the changes in In/Ga and As/P ratios for InGaAs and InGaAsP layers. It appears that mainly the In/Ga-ratio is responsible
for compositional changes and that the As/P-ratio remains unchanged during shadow masked growth. 相似文献
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利用电子束光刻技术制备了200nm栅长GaAs基T型栅InAlAs/InGaAs MHEMT 器件.该GaAs基MHEMT器件具有优越的直流、高频和功率性能,跨导、饱和漏电流密度、阈值电压、电流增益截止频率和最大振荡频率分别达到510mS/mm, 605mA/mm, -1.8V, 138GHz 和78GHz. 在8GHz下,输入功率为-0.88(2.11)dBm时,输出功率、增益、PAE、输出功率密度分别为14.05(13.79)dBm,14.9(11.68)dB,67.74 (75.1)%,254(239)mW/mm,为进一步研究高性能GaAs基MHEMT功率器件奠定了基础. 相似文献
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Z-Q. Fang Q. H. Xie D. C. Look J. Ehret J. E. Van Nostrand 《Journal of Electronic Materials》1999,28(8):L13-L16
We have investigated electron emission from self-assembled In0.5Ga0.5As/GaAs quantum dots (QDs) grown by molecular-beam epitaxy (MBE). Through detailed deep level transient spectroscopy comparisons
between the QD sample and a reference sample, we determine that trap D, with an activation energy of 100 meV and an apparent
capture cross section of 5.4×10−18 cm2, is associated with an electron quantum level in the In0.5Ga0.5As/GaAs QDs. The other deep levels observed, M1, M3, M4, and M6, are common to GaAs grown by MBE. 相似文献
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采用低温GaAs与低温组分渐变InxGa1-xP作为缓冲层,利用低压金属有机化学气相外延(LP-MOCVD)技术,在GaAs(001)衬底上进行了InP/GaAs异质外延实验。实验中,InxGa1-xP缓冲层选用组分线性渐变生长模式(xIn0.49→1)。通过对InP/GaAs异质外延样品进行双晶X射线衍射(DCXRD)测试,并比较1.2μm厚InP外延层(004)晶面ω扫描及ω-2θ扫描的半高全宽(FWHM),确定了InxGa1-xP组分渐变缓冲层的最佳生长温度为450℃、渐变时间为500s。由透射电子显微镜(TEM)测试可知,InxGa1-xP组分渐变缓冲层的生长厚度约为250nm。在最佳生长条件下的InP/GaAs外延层中插入生长厚度为48nm的In0.53Ga0.47As,并对所得样品进行了室温光致发光(PL)谱测试,测试结果表明,中心波长为1643nm,FWHM为60meV。 相似文献
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生长了InGaAsp/InGaP/In(AlGa)P材料分别限制应变量子阱半导体激光器,发光波长780nm。利用电化学C-V表征材料掺杂,掺杂浓度达10^18cm^-1。利用荧光PL及EL表征其光学性质,PL峰为765nm。制得100μm、宽1mm长条形。测得阈值电流为315mA,斜率效率超过1W/A,功率转换达40%左右。注入电流1.5a,光功率单管输出达到1.2W。 相似文献
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Mitsuru Funato Hiroaki Kitani Shizuo Fujita Shigeo Fujita 《Journal of Electronic Materials》1996,25(2):217-222
The effects of GaAs buffer layer and lattice-matching on the nature of deep levels involved in Zn(S)Se/GaAs heterostructures
are investigated by means of deeplevel transient spectroscopy (DLTS). The heterojunction diodes (HDs) where nZn(S)Se is grown
on p+-GaAs by metalorganic vapor phase epitaxy are used as a test structure. The DLTS measurement reveals that when ZnSe is directly
grown on a GaAs substrate, there exist five electron traps A-E at activation energies of 0.20, 0.23, 0.25, 0.37, and 0.53
eV, respectively. Either GaAs buffer layer and lattice-matching may reduce the incorporation of traps C, D, and E, implying
that these traps are ascribed to surface treatment of GaAs substrate and to lattice relaxation. Concentration of trap B, which
is the most dominant level, is proportional to the donor concentration. However, in the ZnSSe/GaAs sub. HD, another trap level,
instead of trap B, locates at the almost same position as that of trap B, and it shows anomalous behavior that the DLTS peak
amplitude changes drastically as changing the rate windows. This is explained by the defect generation through the interaction
between sulfide and a GaAs substrate surface. For the trap A, the concentration is a function of donor concentration and lattice
mismatch, and the origin is attributed to a complex of donor induced defects and dislocations. 相似文献
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塑料薄膜衬底上复合敏感膜热释电传感器的制备 总被引:1,自引:0,他引:1
将Sol-Gel法制备的掺钙钛酸镧铅纳米粉粒(PCLT)与聚偏氟乙烯-三氟乙烯(P(VDF-TrFE)均匀复合,作为热释电传感器的敏感膜,比同样制备条件的纯聚偏氟乙烯-三氟乙烯膜的探测优值高约22.4%。并以沉积有35nmITO薄膜的廉价PET塑料为衬底,用旋转涂膜法沉积PCLT/P(VDF-TrFE)复合敏感膜,用Ni-Cr薄膜作上电极,制备了PCLT/P(VDF-TrFE)/PET热释电传感器。PET塑料可有效降低热释电元件的热导,下电极ITO可反射红外辐射,明显提高了传感器的电压响应和降低热释电元件的热噪声。测试结果表明,PCLT/P(VDF-TrFE)/PET热释电传感器的探测率达到3.4×107cmHz1/2W-1,比同样制备条件的体硅衬底传感器高2个数量级以上。 相似文献