Interaction of atomic oxygen (N2O) with a clean Si(001) surface: O adsorption geometries as derived from the O KVV Auger lineshape

The room temperature adsorption of N₂O on the clean Si(001)2 × 1 surface was used as a model system in an Auger electron spectroscopy (AES) study presented in this paper. Earlier experimental and recent theoretical work have provided evidence that this reaction evolves in discernible stages each exhibiting different adsorption geometries for the oxygen atom. In this AES study the intensity ratio of the KL₁L₁ and KL_2,3L_2,3 O Auger transitions, , was measured as a function of the fractional oxygen coverage, θ, and compared with our calculated intensity ratios and binding energy measurements of the O 1s photoelectron from literature. As a result we have found, for the first time, that (θ) can be related to a specific adsorption geometry in the submonolayer range. Moreover, we have found experimental evidence for an intermediate stable O adsorption state on the dimer at low coverage (θ 0.2 monolayer), as proposed earlier from theoretical studies.     

Adsorption and dissociation of Si2H6 on Ge(001)2 × 1

Adsorption and thermally-induced dissociation of disilane (Si₂H₆) on clean Ge(001)2 × 1 surfaces have been investigated using a combination of Auger electron spectroscopy (AES), electron energy loss spectroscopy (EELS), reflection high-energy electron diffraction (RHEED), and scanning tunneling microscopy (STM). With initial Si₂H₆ exposure at room temperature, the Si surface coverage increased monotonically, the EELS surface dangling bond peak intensities continuously decreased, and the intensity of half-order RHEED diffraction rods decreased. The low-coverage Si₂H₆ sticking probability at 300 K on Ge(001) was found to be 0.5 while the saturation coverage was 0.5 ML. A new EELS feature, GSH, involving Si-H and Ge-H bond states was observed at Si₂H₆ exposures φ 3.4 × 10¹³ cm⁻². In contrast to Si₂H₆ -saturated Si(001), the saturated Ge(001) surface significant fraction of dimerized bonds. Adsorbed overlayers were highly disordered with the primary species on saturated surfaces being SiH₂, GeH, and undissociated SiH₃· Si₂H₆-saturated Ge(001)2 × 1 substrates were annealed for l min at temperatures T_a between 425 and 825 K. Admolecules were mobile at T_a = 545 K giving rise to significant ordering in one-dimensional chains. By T_a = 605 K, essentially all of the admolecules were captured into coarsened islands. Dangling-bond EELS peaks reappeared by 625 K and the intensities of the half-order RHEED diffraction rods increased. Ge segregation to the surface, which began at T_a 625 K, occurred rapidly at T_a 675 K. All H was desorbed by 725 K.     

Si 2p and O 1s photoemission from oxidized Si(0 0 1) surfaces depending on translational kinetic energy of incident O2 molecules

The influence of translational kinetic energy of incident O₂ molecules for the passive oxidation of the partially oxidized Si(0 0 1) surface has been studied by photoemission spectroscopy. The incident energy of O₂ molecules was controlled up to 3 eV by a supersonic molecular beam technique. Two incident energy thresholds (1.0 and 2.6 eV) were found out in accordance with the first-principle calculations. Si 2p and O 1s photoemission spectra measured at representative incident energies showed the incident energy induced oxidation at the backbonds of the dimer and the second layer (subsurface) Si atoms. Moreover, the difference of oxygen chemical bonds was found out to be as the low and the high binding energy components in the O 1s photoemission spectra. They were assigned to bridge sites oxygen and dangling bond sites oxygen, respectively.     

Growth, structure and oxidation of ordered silicon layers on nickel (001)

Thin silicon films deposited in ultra-high vacuum on Ni(001) have been studied, as a function of annealing and/or O₂ exposure, using Auger spectroscopy and low energy electron diffraction. Annealing at temperatures as low as 200 ° C causes rapid intermixing, with only about one monolayer of Si (θ ≈ 1) remaining in a disordered surface layer. Annealing at successively higher temperatures causes further intermixing and the appearance of a c(2 × 2) ordered overlayer (θ = 0.5). The rate of O chemisorption and the structure of the oxide are found to depend on the structure of the adsorbed Si layer. For the c(2 × 2) layer, O₂ exposure leads to the rapid formation of multiple Si---O bonds at all surface Si sites, as in the case of bulk Ni₃Si. This effect is less pronounced (and the saturation O coverage lower) for a surface having a somewhat higher Si coverage but in the form of a disordered layer. The results are interpreted in terms of the involvement of underlayer Ni atoms in promoting O₂ dissociation.     

Adsorbed state and vibrational excitation of N2 on Pd(110)

High-resolution vibrational electron energy loss spectroscopy, low-energy electron diffraction and Auger electron spectroscopy have been used to study the interactions of nitrogen with the Pd(110) surface. At 120 K, N₂ is chemisorbed molecularly on the Pd(110) surface, and the (2 × 1)-N₂ structure is formed. Most probably, the N₂ molecules are chemisorbed in the on-top sites of the bulk-like Pd(110) surface in the upright-linear structure. The Pd---N₂ bond energy is estimated to be ˜ 6 kcal/mol. The Pd---N₂ and N---N stretching vibrations of N₂ admolecules on Pd(110) are observed at 30 and 278 meV, respectively. The primary-energy dependence and angle dependence of their excitation cross sections agree reasonably well with the prediction of the dipole theory. The electron beam-induced effects are briefly discussed.     

Effects of preadsorbed oxygen on the formation and decomposition of NCO on Rh(111) surfaces

The interaction of HNCO with oxygen dosed Rh(111) surface has been investigated by Auger electron, electron energy loss and thermal desorption spectroscopy. The presence of adsorbed oxygen exerted no apparent influence on the weakly adsorbed HNCO (T_p = 130 K). It promoted, however, the dissociative adsorption of HNCO by forming a strong O—H bond which prevented the associative desorption of HNCO. As a result no H₂ and NH₃ formation occurred, in contrast with the clean surface, and the surface concentration of irreversibly bonded NCO was also increased. New products of the surface reaction were H₂O and CO₂, in addition to CO and N₂ observed on a clean surface. From the behavior of the losses characteristic for the adsorbed NCO it appeared that the preadsorbed oxygen exerted a significant stabilizing effect on the NCO bonded to the Rh.     

Oxygen atom-induced D2 and D2O desorption on D/Si(1 1 1) surfaces

We studied reaction of oxygen atoms with D-terminated Si(1 1 1) surfaces from a desorption point of view. As the D (1 ML)/Si(1 1 1) surface was exposed to O atoms D₂ and D₂O molecules were found to desorb from the surface. The desorption kinetics of D₂ and D₂O molecules exhibited a feature characterized with a quick rate jump at the very beginning of O exposure, which was followed by a gradual increase with a delayed maximum and then by an exponential decrease. The O-induced D₂ desorption spectra as a function of T_s appeared to be very similar to the H-induced D₂ desorption spectrum from the D/Si(1 1 1) surfaces. Possible mechanisms for the O-induced desorption reactions were discussed.     

Time evolution of interface roughness during thermal oxidation on Si(0 0 1)

The surface morphological change at an initial stage of thermal oxidation on Si(0 0 1) surface with O₂ was investigated as a function of oxide coverage by a real-time monitoring method of Auger electron spectroscopy (AES) combined with reflection high energy electron diffraction (RHEED). At 653 °C where oxide islands grow laterally, protrusions were observed to develop under the oxide islands as a consequence of concurrent etching of the surface. The rate of etching was measured from a periodic oscillation of RHEED half-order spot intensity I_(1/2,0) and I_(0,1/2). At 549 °C where Langmuir-type adsorption proceeds, it was observed that both I_(1/2,0) and I_(0,1/2) decrease more rapidly in comparison with an increase of oxide coverage and the intensity ratio between them decreases gradually with O₂ exposure time. These suggest that Langmuir-type adsorption occurs at sites where O₂ adsorbs randomly, leading to subdivision of the 2×1 and 1×2 domains by oxidized regions, and that Si atoms are ejected due to volume expansion in oxidation to change the ratio between 2×1 and 1×2 domains.     

Single crystal RuO2/Ti and RuO2/TiO2 interface: LEED, Auger and XPS study

The interactions at the evolving RuO₂/titanium interface have been studied by LEED, AES and XPS. Titanium films of up to 5 monolayers were evaporated onto well ordered and ion sputtered ruthenium dioxide crystal surfaces of (110) and (100) orientation. Stabilization of the surface oxygen content under thermal treatment in UHV (up to 600°C) with increasing titanium coverage was established. After extended (up to 4 h) annealing in O₂ at 600°C an epitaxial ordering of TiO₂ on RuO₂(110) was observed. The (1 × 1) LEED patterns from the epitaxial layer exhibit a reduced background level when compared to the RuO₂ substrate itself. These findings are correlated with the XPS data and are interpreted in connection with the disappearance of the defect RuO₂ phase in the surface layer of the RuO₂. The appearance of the (1 × 2) surface reconstruction at the RuO₂(100)/Ti interface is discussed in the context of maximum cation coordination by oxygen atoms.     

Adsorption of oxygen and carbon dioxide on cesium-reconstructed Ag(1 1 0) surface

The adsorption of oxygen and carbon dioxide on cesium-reconstructed Ag(1 1 0) surface has been studied with scanning tunneling microscopy (STM) and temperature programmed desorption (TPD). At 0.1 ML Cs coverage the whole surface exhibits a mixture of (1 × 2) and (1 × 3) reconstructed structures, indicating that Cs atoms exert a cooperative effect on the surface structures. Real-time STM observation shows that silver atoms on the Cs-covered surface are highly mobile on the nanometer scale at 300 K. The Cs-reconstructed Ag(1 1 0) surface alters the structure formed by dissociative adsorption of oxygen from p(2 × 1) or c(6 × 2) to a p(3 × 5) structure which incorporates 1/3 ML Ag atoms, resulting in the formation of nanometer-sized (10–20 nm) islands. The Cs-induced reconstruction facilitates the adsorption of CO₂, which does not adsorb on unreconstructed, clean Ag(1 1 0). CO₂ adsorption leads to the formation of locally ordered (2 × 1) structures and linear (2 × 2) structures distributed inhomogeneously on the surface. Adsorbed CO₂ desorbs from the Cs-covered surface without accompanied O₂ desorption, ruling out carbonate as an intermediate. As a possible alternative, an oxalate-type surface complex [OOC–COO] is suggested, supported by the occurrence of extensive isotope exchange between oxygen atoms among CO₂(a). Direct interaction between CO₂ and Cs may become significant at higher Cs coverage (>0.3 ML).     

Low-energy D scattering from Cs and CsCl adsorbed on the Si(100)2 × 1 surface

On the basis of neutralization and inelastic scattering of low-energy D⁺ ions, the bond nature of Cs and CsCl adsorbed on the Si(100)2 × 1 surface has been investigated. In a low-coverage regime ( < 0.2 ML), Cs is adsorbed ionically on Si(100) and subsequent oxygen adsorption readily causes the ionic Cs---O bond. CsCl is dissociatively adsorbed on the surface in a low-coverage regime due to the preferential reaction of Cl with the Si dangling bond and the resultant Cs is ionically bonded to Si.     

Scanning tunneling microscopy of N2H4 on silicon surfaces

The chemistry of N₂H₄ on Si(100)2 × 1 and Si(111)7 × 7 has been studied using scanning tunneling microscopy. At low coverages on Si(100)2 × 1 at room temperature the adsorption sites are distributed randomly on the surface and are imaged as dark spots in the dimer row by the STM. Upon annealing the substrate at 600 K, both isolated reaction products, as well as clusters of reaction products are formed on the surface. The STM images show that the majority of the isolated reaction products are adsorbed symmetrically across the dimers. Based on previous HREELS data, these are most likely NH_x groups. However, the clusters are not well resolved. Because of this we speculate that they are not simply symmetrically adsorbed NH_x groups, but likely have a more complicated internal structure. At higher coverages, the STM images show that the predominant pathway for adsorption is with the N---N bond parallel to the surface, in agreement with HREELS studies of this system. On Si(111)7 × 7, the molecule behaves in a manner which is similar to NH₃. That is, at low coverages the molecule adsorbs preferentially at center adatoms due to the greater reactivity of these sites, while at higher coverages it also reacts with the corner adatoms.     

Surface chemistries of lithium: Detailed characterization of the reactions with O2 and H2O using XPS, EELS, AND microgravimetry

The surface chemical reactions of O₂ and H₂O on clean lithium have been studied by a combination of XPS, EELS and microgravimetry. Reactions with O₂ produce a monolayer of oxide which does not passivate the surface and which allows for the growth of several monolayers of additional oxide, probably as a result of the mixing of zero-valent metal into the oxide layer. The reaction of H₂O with the clean lithium surface results in the complete dissociation of the molecule and loss of hydrogen to form one monolayer of the oxide. This is followed by the formation of multilayers of hydroxide/oxide mixtures which are shown to be unstable over periods of minutes, converting back to the oxide form predominantly.     

Atomic structure of the Si(103)1 × 1-In surface

To test the model that was originally proposed for the Si(103)1 × 1-Al facets and was later on tested with STM to be correct for the Ge(103)1 × 1-In facets, in the present paper we have studied the Si(103)1 × 1-In surface by means of the QKLEED/CMTA technique. A unit cell of the model consists of an indium atom, which sits in an adatom position and forms three sp²-like bonds with bulk silicon atoms, and a surface silicon atom with a dangling bond. The model has passed the QKLEED/CMTA test and the best parameters of it have been obtained. It has been noticed in the experiment that the clean Si(103) surface has a surprisingly high thermal stability.     

Adsorption of N2 and N2O on Ni(7 5 5) surface: ab initio periodic density functional study

Adsorption of N₂ and N₂O at various sites on Ni(7 5 5) has been investigated by density functional theory (DFT) method (periodic DMol³). Several possible adsorption structures (attaching the nitrogen atom to the surface, or lying parallel) are found for both molecules. There is a clear binding energy preference of N₂ and N₂O for step sites in contrast to the case of CO. It is revealed that the decomposition of N₂O occurs exclusively near the step, but not on the terrace. Two decomposition channels can be considered; dissociative adsorption and spontaneous decomposition during TPD ramp. Three possible candidates for the precursor of the spontaneous decomposition of N₂O during TPD ramp are discussed.     

Highly stable passivation of a Si(1 1 1) surface using bilayer-GaSe

As a stable and ‘epitaxial’ passivation of a Si surface, we propose the bilayer-GaSe termination of a Si(1 1 1) surface. This surface is fabricated by depositing one monolayer of Ga on a clean Si(1 1 1) surface and subsequent annealing in a Se flux at around 520 °C, which results in unreconstructed 1×1 termination of the Si(1 1 1) surface by bilayer-GaSe. We found by scanning tunneling microscopy observation that slow cooling of the clean Si(1 1 1) surface from 850 to 520 °C with simultaneous deposition of a Ga flux results in better termination of the Si(1 1 1) surface. It was also found that this surface is stable against heating around 400 °C in O₂ atmosphere of 3×10⁻³ Pa. By utilizing these properties of the bilayer-GaSe terminated surface, we have succeeded in fabricating ZnO quantum dots on this substrate.     

W_(20)O_(58)(010)表面氢吸附机理的第一性原理研究

采用基于密度泛函理论的第一性原理平面波超软赝势方法,在广义梯度近似下,研究了W_(20)O_(58)晶胞、W_(20)O_(58)(010)表面结构及其氢吸附机理.计算结果表明:W_(20)O_(58)晶体理论带隙宽度为0.8 eV,为间接带隙,具有金属性.W_(20)O_(58)晶体中W—O共振较强,以共价键居多.W_(20)O_(58)(010)表面有WO终止(010)表面和O终止(010)表面,表面结构优化后使得W—O键长和W—O—W键角改变,从而实现表面弛豫.分别计算了H_2分子吸附在WO终止(001)表面和O终止(001)表面的WO-L-O_(1c),WO-V-O_(1c),WO-L-O_(2c),WO-V-O_(2c),O-L-O_(1c)和O-V-O_(1c)六种吸附构型,其中WO-L-O_(1c),WO-V-O_(1c)和WO-L-O_(2c)这三种吸附构型不稳定;而WO-V-O_(2c),O-L-O_(1c)和O-V-O_(1c)这三种吸附构型都很稳定,H_2分子都解离成两个H原子,吸附能均为负值,分别为-1.164,-1.021和-3.11 eV.WO-V-O_(2c)吸附构型的两个H原子分别吸附在O和W原子上;O-L-O_(1c)吸附构型的两个H原子,一个与O原子成键,另一个远离了表面.其中O-V-O_(1c)吸附构型最稳定,两个H原子失去电子,为O原子提供电子.分析其吸附前后的态密度,H的1s轨道电子与O的2p,2s轨道电子相互作用,均形成了一些较强的成键电子峰,两个H原子分别与O_(1c)形成化学键,最终吸附反应生成了一个H_2O分子,同时产生了一个表面氧空位.     

Formaldehyde decomposition and oxidation on Pt(110)

The decomposition reactions of formaldehyde on clean and oxygen dosed Pt(110) have been studied by LEED, XPS and TPRS. Formaldehyde is adsorbed in two states, a monolayer phase and a multilayer phase which were distinguishable by both TPRS and XPS. The saturated monolayer (corresponding to 8.06 × 10¹⁴ molecules cm⁻²) desorbed at 134 K and the multilayer phase (which could not be saturated) desorbed at 112 K. The only other reaction products observed at higher temperatures were CO and H₂ produced in desorption limited processes and these reached a maximum upon saturation of the formaldehyde monolayer. The desorption spectrum of hydrogen was found to be perturbed by the presence of CO as reported by Weinberg and coworkers. It is proposed that local lifting of the clean surface (1 × 2) reconstruction is responsible for this behaviour. Analysis of the TPRS and XPS peak areas demonstrated that on the clean surface approximately 50% of the adsorbed monolayer dissociated with the remainder desorbing intact. Reaction of formaldehyde with preadsorbed oxygen resulted in the formation of H₂O (hydroxyl recombination) and CO₂ (decomposition of formate) desorbing at 200 and 262 K, respectively. The CO and H₂ desorption peaks were both smaller relative to formaldehyde decomposition on the clean surface and in particular, H₂ desorbed in a reaction limited process associated with decomposition of the formate species. No evidence was found for methane or hydrocarbon evolution in the present study under any circumstances. The results of this investigation are discussed in the light of our earlier work on the decomposition of methanol on the same platinum surface.     

Na2O overlayers epitaxially prepared on Pd(100) and structure-sensitive CO2 adsorption

Sodium oxide overlayers prepared on Pd(100) were examined with AES, LEED and XPS. The oxides were grown by cycles of Na deposition followed by oxidation, maintaining the composition of Na₂O. The surface structure of the deposited oxide was sensitive to the annealing temperature after oxidation. The Na₂O/Pd(100) surfaces gave rise to a (3 × 3) LEED pattern when annealed at 600 K under vacuum. A model based on Na₂O(100) was proposed for the (3 × 3) overlayers, where the oxide was epitaxially aligned in a square periodicity on the substrate. Multilayered Na₂O was prepared maintaining the (3 × 3) pattern, by repeated cycles of preparation. Annealing at 700 K caused a c(4 × 6) pattern, for which a model based on Na₂O(110) was proposed. CO₂ was adsorbed on the (3 × 3) oxide of various thickness to form carbonate at 350 K, whereas the c(4 × 6) oxide was inert. The relationship of structure and reactivity is discussed in relation to the microscopic design of metal-oxide surfaces for base-catalysis.     

A mimic model of Pt---Rh catalyst prepared by electrochemical deposition of Rh on the Pt(100) surface

Electrochemical deposition of Rh ions on a (5 × 20) Pt(100) surface gave a (1 × 1) LEED pattern with high background intensity. By exposing the (1 × 1) Rh/Pt(100) surface to O₂ or NO, a characteristic p(3 × 1) Rh---O overlayer is built up at about 400 K, which is the same structure observed on the Pt_0.25Rh_0.75(100) surface exposed to NO or O₂. Once the p(3 × 1) Rh---O overlayer is formed, a reversible structural change, ,p(3 × 1) (1 × 1), can be caused at room temperature by adding H₂ and O₂. The p(3 × 1) Rh---O overlayer on the Pt(100) surface may represent a highly efficient catalyst for NO_x reduction.