TiO2/ZnO纳米薄膜界面热导率的分子动力学模拟

采用平衡分子动力学方法及Buckingham势研究了金红石型TiO₂薄膜与闪锌矿型ZnO薄膜构筑的纳米薄膜界面沿晶面[0001](z轴方向)的热导率.通过优化分子模拟初始条件中的截断半径r_c和时间步后,计算并分析了平衡温度、薄膜厚度、薄膜截面大小对热导率的影响.研究表明,薄膜热导率受薄膜温度和厚度的影响很大,当温度由300 K升高600 K时,薄膜的热导率逐渐减小;当薄膜厚度由1.8 nm增大到5 nm时,热导率会逐渐增大;并在此基础 关键词： 热导率 分子动力学 2/ZnO纳米薄膜界面')" href="#">TiO₂/ZnO纳米薄膜界面 数值模拟     

Room temperature ferromagnetism behavior of Sn1−xMnxO2 powders

In this paper, we have investigated Mn-doped SnO₂ powder samples prepared by solid-state reaction method. X-ray diffraction showed a single phase polycrystalline rutile structure. The atomic content of Mn ranged from ∼0.8 to 5 at%. Room temperature M-H loops showed a ferromagnetic behavior for all samples. The ferromagnetic Sn_0.987Mn_0.013O₂ showed a coercivity H_c=545 Oe, which is among the highest reported for dilute magnetic semiconductors. The magnetic moment per Mn atom was estimated to be about 2.54 μ_B of the Sn_0.9921Mn_0.0079O₂ sample. The average magnetic moment per Mn atom sharply decreases with increasing Mn content, while the effective fraction of the Mn ions contributing to the magnetization decreases. The magnetic properties of the Sn_1−xMn_xO₂ are discussed based on the competition between the antiferromagnetic superexchange coupling and the F-center exchange coupling mechanism, in which both oxygen vacancies and magnetic ions are involved.     

Preparation, structure and ferromagnetic properties of the nanocrystalline Ti1-xMnxO2 thin films grown by radio frequency magnetron co-sputtering

This paper reported that the Mn-doped TiO2 films were prepared by radio frequency （RF） magnetron cosputtering. X-ray diffraction measurements indicate that the samples are easy to form the futile structure, and the sizes of the crystal grains grow big and big as the Mn concentration increases. X-ray photoemlssion spectroscopy measurements and high resolution transmission electron microscope photographs confirm that the manganese ions have been effectively doped into the TiO2 crystal when the Mn concentration is lower than 21%. The magnetic property measurements show that the Ti1-xMnxO2 （x = 0.21） films are ferromagnetic at room temperature, and the saturation magnetization, coercivity, and saturation field are 16.0 emu/cm^3, 167.5 × 80 A/m and 3740 × 80 A/m at room temperature, respectively. The room-temperature ferromagnetism of the films can be attributed to the new futile Ti1-xMnxO2 structure formed by the substitution of Mn^4＋ for Ti^4＋ into the TiO2 crystal .lattice, and could be explained by O vacancy （Vo）-enhanced ferromagnetism model.     

Synthesis and photocatalytic oxidation of different organic dyes by using Mn2O3/TiO2 solid solution and visible light

Mn₂O₃/TiO₂ solid solution was prepared from two different oxides, manganese oxide (from KMnO₄ and ethanol) and TiO₂, these samples were characterized by BET, XRD, EDAX, SEM, FT-IR, ESR, XPS and UV–vis absorption spectroscopy. Photocatalytic activities of Mn₂O₃/TiO₂ powder was investigated by photooxidation of different dyes like Rhodamine B, thymol blue, methyl orange and Bromocresol green under visible light (300-W Xe lamp; λ > 420 nm). The results show that the alloy of TiO₂ with 1 mol% of Mn₂O₃ (MNT1) exhibit photocatalytic activity 3–5 times higher than that of P25 TiO₂ for oxidation of various dyes (RB, TB, MO and BG). The average particle size and crystallite size of MNT1 were found to be 100 nm and 12 nm measured from SEM and XRD, respectively. The EPR spectra of the Mn₂O₃/TiO₂ samples is a sharp five-line Mn(III) component centered on g_eff = 1.99.     

Colossal magnetoresistance in layered manganite Nd2−2x Sr1+2x Mn2O7 (0 ≤ x ≤ 0.5)

The layered manganite Nd_2−2x Sr_1+2x Mn₂O₇, with x varying between 0 and 0.5, has been synthesized using solid-state reaction method. We have found that Nd_2−2x Sr_1+2x Mn₂O₇ do not form the single-phase layered compound with A₃B₂O₇ structure. Instead, mixtures of various phases, such as, orthorhombic perovskite, i.e., Nd_1−z Sr _z MnO₃, layered manganite and unreacted starting compounds, have been obtained. Except for x=0.4, which is found to be an antiferromagnetic insulator, all other x values yielded metal-insulator transition and ferromagnetic ordering.     

磁控溅射制备Y2O3-TiO2薄膜形貌的研究

室温下采用射频磁控溅射法,在硅衬底上制备了Y₂O₃-TiO₂氧化物复合薄膜.利用XRD(X-ray diffraction)和AFM( atomic force microscopy)分析观察了退火前后样品的物相、形貌等变化,讨论了致密薄膜的生长机理.实验发现,溅射功率越大,薄膜的平整度和致密度越好.对热处理前后样品的结晶结构和表面形貌的分析结果显示,在本实验参数范围内,随着溅射功率的增大,更多的Y₂O_{3关键词： 2}O₃-TiO₂薄膜')" href="#">Y₂O₃-TiO₂薄膜 表面形貌 原子力显微镜 磁控溅射     

反应溅射法制备TiO2薄膜

报道了用反应溅射法制备TiO₂薄膜的实验研究.详细研究了氧分压、基底温度和退火温度对成膜结构的影响.制备出了具有金红石和锐钛矿晶体结构的TiO₂薄膜.分析了金红石和锐钛矿晶体的形成条件,并对薄膜的表面形貌进行了测量. 关键词： 反应溅射 2薄膜')" href="#">TiO₂薄膜     

Structure and magnetic properties of Sn1−xMnxO2

The microstructure and magnetic properties have been investigated systematically for Sn_1−xMn_xO₂ polycrystalline powder samples with x=0.02-0.08 synthesized by a solid-state reaction method. X-ray diffraction revealed that all samples are pure rutile-type tetragonal phase and the cell parameters a and c decrease monotonously with the increase in Mn content, which indicated that Mn ions substitute into the lattice of SnO₂. Magnetic measurements revealed that all samples exhibit room temperature ferromagnetism. Furthermore, magnetic investigations demonstrate that magnetic properties strongly depend on doping content, x. The average magnetic moment per Mn atom decreases with increase in the Mn content, because antiferromagnetic super-exchange interaction takes place within the neighbor Mn³⁺ ions through O²⁻ ions for the samples with higher Mn doping. Our results indicate that the ferromagnetic property is intrinsic to the SnO₂ system and is not a result of any secondary magnetic phase or cluster formation.     

TiO2/polyaniline nanocomposite films prepared by magnetron sputtering combined with plasma polymerization process

Radiofrequency plasma polymerization in combination with direct current reactive magnetron sputtering is utilized for the synthesis of TiO₂/plasma polymerized aniline nanocomposite thin films. In the composite film, X-ray diffraction measurements reveal formation of nanocrystalline rutile TiO₂ of crystallite size 3.6 nm. Due to continuous bombardment of plasma species during simultaneous magnetron sputtering and plasma polymerization, the precursors of polymerization are broken and few functional groups are retained in the composite film. The plasma polymerized aniline has the direct optical band gap of 3.55 eV and the nanocrystalline rutile TiO₂ is wide gap semiconductor with indirect gap of 3.20 eV which suggests the existence of an energy barrier at the interface in the composite form. The ac conductivity of composite film shows significant improvement as compared to plasma polymerized aniline film and sputtered rutile TiO₂ film. The composite film may find potential application as antistatic coatings.     

Investigation into the effects of deposition parameters on TiO2 photocatalyst thin films by rf magnetron sputtering

Titanium dioxide (TiO₂) photocatalyst thin films were deposited on non-alkali glass substrates by radio frequency (rf) magnetron sputtering. The Taguchi method with orthogonal array, signal-to-noise ratio and analysis of variance were employed to study the performance characteristics. The experimental studies were conducted under different rf powers, sputtering pressures, O₂/(Ar+O₂) flow-rate ratios, and substrate temperatures. The deposited TiO₂ films were of the anatase phase with a (101) preferred orientation. We performed both photoinduced decomposition of methylene blue (MB) and photoinduced hydrophilicity under UV light illumination. With the optimized TiO₂ photocatalyst thin film deposition conditions, the water contact angle after 9 min UV illumination was approximately 5, the absorbance of MB was reduced to 0.2 for 240 min UV irradiation, and the deposition rate was 34.18 Å/min.     

Al掺杂的尖晶石型LiMn2O4的结构和电子性质

采用基于密度泛函理论的第一性原理方法, 在广义梯度近似(GGA)和GGA+U方法下对尖晶石型LiMn₂O₄及其Al掺杂 的尖晶石型LiAl_0.125Mn_1.875O₄晶体的结构和电子性质进行了计算. 结果表明: 采用GGA方法得到尖晶石型LiMn₂O₄是立方晶系结构, 其中的Mn离子为+3.5价, 无法解释它的Jahn-Teller 畸变. 给出的LiMn₂O₄能带结构特征也与实验结果不符. 而采用GGA+U方法得到在低温下的LiMn₂O₄和其掺杂 体系LiAl_0.125Mn_1.875O₄的晶体都是正交结构, 与实验一致. 也能明确地确定Mn的两种价态Mn³⁺/Mn⁴⁺的分布并且能够说明Mn³⁺O₆的z方向有明显的Jahn-Teller 畸变, 而Mn⁴⁺O₆则没有畸变. LiMn₂O₄的能带结构与实验比较也能够符合. 采用GGA+U方法对Al掺杂体系的LiAl_0.125Mn_1.875O₄的研究表明, 用Al替换一个Mn不会明显地改变晶体的电子性质, 但可以有效地消除Al³⁺O₆ 八面体的Jahn-Teller畸变, 从而改善正极材料LiMn₂O₄的性能, 这与电化学实验的观察结果相一致.     

Magnetic properties of Mn-doped GaN with defects: ab-initio calculations

According to first-principles density functional calculations,we have investigated the magnetic properties of Mn-doped GaN with defects,Ga 1-x-y V Gx Mn y N 1-z-t V Nz O t with Mn substituted at Ga sites,nitrogen vacancies V N,gallium vacancies V G and oxygen substituted at nitrogen sites.The magnetic interaction in Mn-doped GaN favours the ferromagnetic coupling via the double exchange mechanism.The ground state is found to be well described by a model based on a Mn 3+-d 5 in a high spin state coupled via a double exchange to a partially delocalized hole accommodated in the 2p states of neighbouring nitrogen ions.The effect of defects on ferromagnetic coupling is investigated.It is found that in the presence of donor defects,such as oxygen substituted at nitrogen sites,nitrogen vacancy antiferromagnetic interactions appear,while in the case of Ga vacancies,the interactions remain ferromagnetic;in the case of acceptor defects like Mg and Zn codoping,ferromagnetism is stabilized.The formation energies of these defects are computed.Furthermore,the half-metallic behaviours appear in some studied compounds.     

氧氩比对SnO2/Ag/SnO2透明导电膜光电性能的影响

在室温及不同的氧氩比条件下,采用射频磁控溅射Ag层和直流磁控溅射SnO₂层,在载玻片衬底上制备出了SnO₂/Ag/SnO₂多层薄膜.用霍尔效应测试仪、四探针电阻测试仪和紫外-可见-近红外光谱仪等表征了薄膜的电学性质和光学性质.实验结果表明:当氧氩比为1:14时,所制得的薄膜的光电性质优良指数最大,为1.69×10^-2 Ω^-1;此时,薄膜的电阻率为9.8×10^-5 Ω·cm,方电阻为9.68 Ω/sq,在400~800 nm可见光区的平均光学透射率达85%;并且,在氧氩比为1:14时,利用射频磁控溅射Ag层和直流磁控溅射SnO₂层在PET柔性衬底上制备出了光电性质优良的柔性透明导电膜,其在可见光区的平均光学透过率达85%以上,电阻率为1.22×10^-4 Ωcm,方电阻为12.05 Ω/sq.     

Nanostructure of photocatalytic TiO2 films sputtered at temperatures below 200 °C

The article reports on correlations between the process parameters of reactive pulsed dc magnetron sputtering, physical properties and the photocatalytic activity (PCA) of TiO₂ films sputtered at substrate surface temperature T_surf ≤ 180 °C. Films were deposited using a dual magnetron system equipped with Ti (Ø50 mm) targets in Ar + O₂ atmosphere in oxide mode of sputtering. The TiO₂ films with highly photoactive anatase phase were prepared without a post-deposition thermal annealing. The decomposition rate of the acid orange 7 (AO7) solution during the photoactivation of the TiO₂ film with UV light was used for characterization of the film PCA. It was found that (i) the partial pressure of oxygen pO₂ and the total sputtering gas pressure p_T are the key deposition parameters influencing the TiO₂ film phase composition that directly affects its PCA, (ii) the structure of sputtered TiO₂ films varies along the growth direction from the film/substrate interface to the film surface, (iii) ∼500 nm thick anatase TiO₂ films with high PCA were prepared and (iv) the structure of sputtered TiO₂ films is not affected by the substrate surface temperature T_surf when T_surf < 180 °C. The interruption of the sputtering process and deposition in long (tens of minutes) pulses alternating with cooling pauses has no effect on the structure and the PCA of TiO₂ films and results in a decrease of maximum value of T_surf necessary for the creation of nanocrystalline nc-TiO₂ film. It was demonstrated that crystalline TiO₂ films with high PCA can be sputtered at T_surf ≤ 130 °C. Based on obtained results a phase zone model of TiO₂ films was developed.     

Development of rf plasma sputtered Al2O3-TiO2 multilayer broad band antireflecting coatings and its correlation with plasma parameters

TiO₂/Al₂O₃/TiO₂/Al₂O₃ multilayer structures were obtained at different oxygen:argon gas ratios of 20:80, 30:70, 50:50 and 60:40 sccm and constant rf power of 200 W using reactive magnetron sputtering. Grain size and elemental distribution in the films were studied from AFM image and XPS spectra respectively. The deposited grain size increased with increasing oxygen:argon gas ratio. The optical band gap, refractive index, extinction coefficient were calculated from UV-vis transmittance and reflectance spectra. It was observed that the value of refractive index, extinction coefficient and band gap increased with increasing oxygen. These variations are due to the defects levels generated by the heterostructure and explained by the PL spectrum. The antireflecting (AR) efficiency of the films was estimated from the reflectance spectra of the films. Broad band antireflecting coating for the visible range was achieved by varying oxygen content in the film. The plasma chemistry controlled the antireflecting property by the interface interdiffusion of atoms during layer transition in multilayer deposition. The in situ investigation of the plasma chemistry was performed using optical emission spectroscopy. The plasma parameters were estimated and correlated with the characteristics of the films.     

Ionizing radiation effects on electrical and reliability characteristics of sputtered Ta2O5/Si interface

This paper describes the effect of ionizing radiation on the interface properties of Al/Ta₂O₅/Si metal oxide semiconductor (MOS) capacitors using capacitance–voltage (C–V) and current–voltage (I–V) characteristics. The devices were irradiated with X-rays at different doses ranging from 100?rad to 1?Mrad. The leakage behavior, which is an important parameter for memory applications of Al/Ta₂O₅/Si MOS capacitors, along with interface properties such as effective oxide charges and interface trap density with and without irradiation has been investigated. Lower accumulation capacitance and shift in flat band voltage toward negative value were observed in annealed devices after exposure to radiation. The increase in interfacial oxide layer thickness after irradiation was confirmed by Rutherford Back Scattering measurement. The effect of post-deposition annealing on the electrical behavior of Ta₂O₅ MOS capacitors was also investigated. Improved electrical and interface properties were obtained for samples deposited in N₂ ambient. The density of interface trap states (D_it) at Ta₂O₅/Si interface sputtered in pure argon ambient was higher compared to samples reactively sputtered in nitrogen-containing plasma. Our results show that reactive sputtering in nitrogen-containing plasma is a promising approach to improve the radiation hardness of Ta₂O₅/Si MOS devices.     

Enhanced optical properties of Al-doped TiO2 thin films in oxygen or nitrogen atmosphere

Al-doped TiO₂ (TiO₂:Al) films were deposited by simultaneous RF magnetron sputtering of TiO₂ and DC magnetron sputtering of Al. The advantage of this method is that the Al content could be independently controlled. By depositing in a mixed Ar-O₂ or a mixed Ar-N₂ atmosphere, the TiO₂:Al film became more stoichiometric and the nanocrystallinity was enhanced. The nonlinear refractive index of TiO₂:Al film deposited in a pure Ar, a mixed Ar-O₂ or a mixed Ar-N₂ atmosphere was measured by Moiré deflectometry, and was of the order of 10⁻⁸ cm² W⁻¹. For the TiO₂:Al film deposited in a pure Ar atmosphere, the porosity was higher corresponding to the lower transmission. However, the porosity of TiO₂:Al film decreased as the oxygen or nitrogen pressure increased. Especially, as the ratio of O₂ to Ar pressure increased to 0.22, TiO₂:Al film exhibited lower porosity, higher visible transmission, higher linear refractive index, lower stress and lower stress-optical coefficient.     

TiO2 coating of LiNi1/3Co1/3Mn1/3O2 cathode materials for Li-ion batteries

TiO₂-coated LiNi_1/3Co_1/3Mn_1/3O₂ materials were prepared by the hydrolyzation of Ti(OBu)₄. The impact of TiO₂ coating on the structure and electrochemical properties of LiNi_1/3Co_1/3Mn_1/3O₂ was investigated using X-ray diffraction, scanning electron microscope, and charge–discharge tests. The results indicated that TiO₂ coating did not affect the lattice of LiNi_1/3Co_1/3Mn_1/3O₂, but exhibited obvious effects on its discharge capacity and cycling stability. As coated TiO₂ increased from 0.0 to 2.0 mol%, the initial capacity of samples decreased slightly, but the cycling stability over 2.5∼4.3 V increased remarkably. The capacity retention reached 99.5% at the 50th cycle at a coating amount of 2.0 mol%.     

“In situ” XPS study of band structures at Cu2O/TiO2 heterojunctions interface

In an attempt to investigate influence of the defects on electronic structure of Cu₂O/TiO₂ heterojunctions, thin Cu₂O layers were successively deposited on TiO₂ that has different levels of defect concentrations, and the resultant band bending and offset characteristics were studied by in situ X-ray photoelectron spectroscopy (XPS). The TiO₂ substrates with defects were prepared by Ar⁺ sputtering, followed by annealing at different temperatures in oxygen atmosphere. Presence of the defects in TiO₂ surface dramatically influences on the band bending and band offset at the interface: more defects are on TiO₂ surface, less band bending are at the interface, inducing smaller conduction band offsets. On the reduced TiO₂ surface, Cu₂O was disproportionately decomposed to form CuO and Cu.     

Influence of deposition atmosphere on photocatalytic activity of TiO2/SiOx double-layers prepared by RF magnetron sputtering

TiO₂/SiO_x double-layers have been prepared at room temperature by RF magnetron sputtering. The TiO₂ top-layer was deposited in an Ar atmosphere, while the SiO_x bottom-layer was deposited in an Ar/O₂ atmosphere. Samples were characterized using X-ray photoelectron spectroscopy, scanning electron microscopy, atomic force microscopy, and photoluminescence techniques. The photocatalytic activity of the samples was evaluated by the photodegradation of methylene blue; the results showed that the photocatalytic activity of the TiO₂/SiO_x double-layers was superior to that of the TiO₂ single-layers. The presence of the SiO_x bottom-layer improved the photocatalytic activity of the TiO₂ layer because it may act as a trap for electrons generated in the TiO₂ layer thus preventing electron-hole recombinations.