基于平面硅的晶硅异质结太阳电池表面减反膜的优化

目前晶硅异质结太阳电池大多采用刻蚀绒面来减小光学损耗,但该方法工艺繁琐,且重复性和后期镀膜均匀性不佳;同时,绒面增加了载流子的传输路径和复合概率,限制了电池性能的提高。本文利用太阳电池模拟软件OPAL和光学膜系设计软件TFCalc,以平面硅为衬底,设计了一种双层TiO_2/SiN_x减反膜。考虑到太阳光谱分布和异质结太阳电池的光谱响应,本文以加权平均光学损耗作为评价函数,将TiO_2/SiN_x双层减反膜与玻璃、衬底作为一体进行了优化,并将本文设计的减反膜与绒面硅上单层ITO减反膜的加权平均光学损耗进行了对比。结果表明,与绒面硅上单层ITO减反膜相比,所设计的双层减反膜的加权平均光学损耗更小,为4.69%,较单层ITO减反膜减小了1.97个百分点,且吸收损耗显著降低。本文研究为平面硅替代绒面硅提供了理论支持。     

溶胶-凝胶法制备ZrO2/SiO2双层减反硬膜

以锆酸丙酯[Zr(OPr)4]、正硅酸乙酯(TEOS)为原料, 用溶胶-凝胶(sol-gel)提拉法涂膜, 制备高透过的λ/ 4～λ/ 4型ZrO2/SiO2双层减反膜.该减反膜的表面均匀, 均方根(RMS)粗糙度为1.038 nm, 平均粗糙度(RA)为0.812 nm.制备的双层减反膜具有很好的减反效果, 在石英玻璃基片二面涂膜, 在激光三倍频波长351 nm处透射比达到99.41%, 比未涂膜石英玻璃基片的透射比提高了6.14%;在基频波长1053 nm处透射比达到99.63%, 比未涂膜K9光学玻璃基片的透射比提高了7.67%.膜层具有较高的激光损伤阈值, 在激光波长为1053 nm, 脉冲宽度为1 ns时, 薄膜的激光损伤阈值达到16.8 J/cm2.膜层具有良好的耐擦除性能.     

离子束辅助淀积低温微光学元件红外宽带增透膜

简要叙述了锗基片微光学元件红外宽带减反膜的设计与制作。着重介绍了离子束辅助淀积制备该膜系的过程，给出了用该方法制作８～１２μｍ波段的减反膜的测试曲线，它具有峰值透过率高，在设计波长范围内的平均透过率大于９７％以上，膜层附着好，可以切割和擦洗，可以在室温和１００Ｋ低温下反复循环使用。     

减反膜对单晶硅太阳能电池性能的影响分析

在太阳能电池效率的评价中,电池材料、掺杂浓度、扩散长度等都是比较重要的参数,合理地改变相关参数可以优化太阳能电池的性能,提高电池效率。此外,在太阳能电池表面镀一层具有减反作用的光学薄膜（简称减反膜）也是提高电池效率的重要手段。以提高电池效率为目标,对单晶硅太阳能电池的掺杂浓度和扩散长度等微观参数进行计算优化,分析了掺杂浓度和扩散长度变化对电池效率的影响。并在此基础上分析了不同类型的减反膜对于电池效率的影响,给出了最佳减反膜材料及其膜系厚度,并且结合镀膜后电池量子效率的变化验证了其准确性。结果表明,在优化电池掺杂浓度和扩散长度的基础上,选择合适的减反膜,电池效率最高可达20.35%,相比于优化前提高了8.25%。     

双离子束溅射淀积DLC膜的红外特性

用双离子束溅射法在50℃以下的玻璃基片上淀积了类金刚石碳(DLC)膜.研究了轰击离子能量、轰击离子束流密度及轰击源内氢/氩流量比例对淀积片红外透射特性的影响.所用波段是1.5～5.5μm.结果表明,对所有淀积样片,其相对透过率均随波长增长而增大.在每组实验中,随如上各可变参量的增大,各样片的相对透过率～波长曲线均有先上升后下降的规律.确定了各组相应的临界参数.结果还表明,轰击源不含氢并不影响DLC膜的制取,但轰击源合氢时所制得的膜具有更好的红外透射性.从结构变化的角度解释了上述规律.     

催化剂对制备SiO_2减反膜的影响

以正硅酸乙酯(TEOS)为有机硅源,乙醇为溶剂,NH3.H20和HCl为催化剂,采用溶胶-凝胶技术,通过调节催化剂控制SiO2纳米颗粒尺度,然后在玻璃上用旋涂法镀膜并对其进行热处理,制备低折射率SiO2减反膜.分别采用椭偏仪和扫描电镜对所制备减反膜的结构、物性进行研究,研究不同性质和剂量的催化剂对薄膜结构、折射率的影响.结果表明:通过控制适量的碱酸催化剂可以制备出低折射率多孔结构的SiO2太阳电池减反膜.     

使用SiNx原位淀积方法生长的GaN外延膜中的应力研究

采用低压MOCVD系统，在生长过程中使用SiN_x原位淀积的方法产生纳米掩模，并 在纳米掩模上进行选区生长和侧向外延制备了GaN外延薄膜.使用拉曼光谱和光荧光的手段对 GaN外延膜中的残余应力进行了研究.研究发现，用SiN_x原位淀积出纳米掩模后 ，GaN生长将由二维向三维转变，直到完全合并为止.利用拉曼光谱和光荧光谱分别研究了薄 膜中的残余应力，两者符合得很好；这种方法生长出的GaN薄膜的应力分布较传统的侧向外 延更加均匀；并且从中发现随着生长过程中SiN_x原位淀积时间的增加，生长在 其上的GaN外延膜中的残余应力减小.这是因为，随着SiN_x原位淀积时间的增加 ，SiN_x纳米掩模的覆盖度也增大.因此侧向外延区的比例增大，残余应力随之减 小. 关键词： GaN x原位淀积')" href="#">SiN_x原位淀积 拉曼 光荧光 残余应力     

高温处理工艺对低压MOCVD外延GaAs/Ge太阳电池的影响

采用自制的低压金属有机化学汽相淀积LP-MOCVD设备,在Ge衬底(100)面向(111)偏9°外延生长出GaAs电池结构,对电池材料进行了X射线衍射分析另外,对由此材料制成的太阳电池进行了性能测试,测试结果表明,Ge衬底的高温处理工艺对GaAs/Ge太阳电池的电流电压特性有一定的影响试验表明,在600～700℃之间高温处理效果较好。     

基于传输矩阵法的多层介质膜反射特性研究

薄膜干涉是大学物理波动光学教学的重要内容,也是薄膜光学的理论基础.薄膜干涉的一个重要应用是用于设计减反膜和高反膜.本文基于传输矩阵法,定量计算了多层介质膜的反射率.以BK7玻璃为例,无镀膜时在可见光范围内,其反射率约为4%.利用薄膜的相消干涉可以减少表面的反射率.镀一层减反膜时,对设计波长550 nm其反射率下降为1.3%,一旦偏离设计波长减反效果变差;镀两层减反膜时,在470 nm～670 nm范围内,减反效果明显改善,反射率均低于1.3%.利用薄膜的相长干涉可以增加表面的反射率.以熔石英为例,镀一层薄膜时,对设计波长1500 nm其反射率可由未镀膜时的3.3%提高到30%;镀七组薄膜时在1360 nm～1660 nm范围内其反射率均可达99%以上.通过这些定量计算,让学生更加深刻地理解所学理论知识在实际中的应用,培养工程意识,提高学习兴趣.     

含氟有机硅改性多孔二氧化硅减反膜

二氧化硅减反膜的结构疏松,且胶粒表面存在大量羟基,膜层极易吸附环境中的水分和有机蒸气,透射比稳定性较低.为了改善原有减反膜的环境稳定性,以3,3,3-三氟丙基三甲氧基硅烷和3,3,3-三氟丙基甲基二乙氧基硅烷为掺杂剂,正硅酸乙酯为前躯体,采用溶胶-凝胶法制备了两个系列的SiO2减反膜.结果表明,含氟硅氧烷改性的系列膜层的疏水性能均得到显著增强.CF3-CH2-CH2-Si或CF3-CH2-CH2-Si-CH3质量分数在0.40%～1.5%的范围内时,二氧化硅膜层的减反效果较好.掺入含氟硅氧烷在一定质量分数时,膜层的抗激光损伤性能受到的影响不大.10-3Pa高真空环境的实验表明,膜层的稳定性有较大提高,含氟硅氧烷改性延长了减反膜的使用寿命.     

Silicon solar cells with Al2O3 antireflection coating

The paper presents the possibility of using Al₂O₃ antireflection coatings deposited by atomic layer deposition ALD. The ALD method is based on alternate pulsing of the precursor gases and vapors onto the substrate surface and then chemisorption or surface reaction of the precursors. The reactor is purged with an inert gas between the precursor pulses. The Al₂O₃ thin film in structure of the finished solar cells can play the role of both antireflection and passivation layer which will simplify the process. For this research 50×50 mm monocrystalline silicon solar cells with one bus bar have been used. The metallic contacts were prepared by screen printing method and Al₂O₃ antireflection coating by ALD method. Results and their analysis allow to conclude that the Al₂O₃ antireflection coating deposited by ALD has a significant impact on the optoelectronic properties of the silicon solar cell. For about 80 nm of Al₂O₃ the best results were obtained in the wavelength range of 400 to 800 nm reducing the reflection to less than 1%. The difference in the solar cells efficiency between with and without antireflection coating was 5.28%. The LBIC scan measurements may indicate a positive influence of the thin film Al₂O₃ on the bulk passivation of the silicon.     

Role of ion energy flux on the structural and morphological properties of silicon oxy-nitride composite films deposited by plasma focus device

ABSTRACT

Crystalline silicon oxy-nitride (SiON) composite films are deposited on Si substrate for multiple (5, 15, 25 and 50) focus shots (FS) by plasma focus device. The X-rays diffraction patterns reveal the development of various diffraction peaks related to Si, Si₃N₄, and SiO₂ phases which confirms the formation of SiON composite film. The intensity of Si₃N₄ (1 0 2) plane is linearly increased with the increase of FS. The Si₃N₄ (1 0 2) phase does not nucleate for 5 FS. Raman analysis confirms the formation of β–Si–N phase. Raman and Fourier transform infrared spectroscopy analysis reveals that the strength of chemical bonds like Si–N, Si–O formed during the deposition process of SiON composite films is associated with the bonds intensity which in turn depends on the number of FS. The field emission scanning electron microscopic analysis reveals that the surface morphology like size, shape and distribution of micro/nano-dimensional particles, film compactness and the formation of micro-rods, micro-teethes and micro-tubes of SiON composite films is entirely associated with the rise in substrate surface transient temperature which in turn depends on the increasing number of FS. The EDX spectrum confirms the presence of Si (22.5?±?4.7 at. %), N (13.4?±?4.5 at. %) and O (54.7?±?11.3 at. %) in the SiON composite film. The thickness of SiON composite film deposited for 50 FS is found to ～15.47?µm.     

Investigation on antireflection coatings for Al:ZnO in silicon thin-film solar cells

We numerically investigate the role of antireflection (AR) coatings, composed of SiO₂ and/or ZnO, in suppression of interfacial reflections in the presence of the transparent conducting oxide, Al-doped ZnO (AZO). Three structures are simulated: (a) AR coatings in organic light-emitting diodes (OLEDs) and flat panel displays, (b) AR coating located between the glass and the AZO, and (c) same as the case b except the involvement of another AR coating between the AZO and the amorphous silicon layers. The weighted average transmittance according to the AM1.5 solar spectrum, the photovoltaic transmittance (T_pv), suggests that there is no evident difference between the structures a and b, especially when the layer number of AR coatings is less than three. An effective way to improve T_pv is presented in the structure c, where T_pv is increased from 73.54% to 76.32% with a three-layered AR coating located between AZO and a-Si. It implies that the suppression of interfacial reflections, resulting from the considerable mismatch of refractive indices at the interface of AZO and a-Si, would benefit the efficiency improvement of silicon thin-film solar cells.     

Plasmon based antireflection coatings containing nanostructured Ag and silica medium

The transmittance and scattering of the antireflection (AR) coatings based on nanostructured Ag and silica medium were enhanced by the exploitation of the localized surface plasmon resonance (LSPR). The transmittance and scattering values of AR coatings are relative to the annealing temperature, Ag concentration and thickness of AR coatings. The transmittance values of 95.7% and 97.2% of AR coatings with 0.10 wt.% Ag and annealed at 400 °C were obtained in the visible wavelength for a single-side and double-side coated glass slides, respectively. The enhanced transmittance and scattering of the AR coatings are primarily attributable to the large forward scattering of nanostructured Ag and the lesser refractive indices of Ag/SiO₂ coatings.     

DF化学激光窗口低损耗增透膜

 表述了DF激光波段采CaF₂和硅窗口减反射膜系的结果。分析了设计多层AR膜的方法并给出用ZnSe/YbF₃材料组合的双层和五层AR膜系。计算了各种膜系的理论性能。研究了膜层淀积工艺技术,对于CaF₂和硅窗口,在DF激光波段实验透过率分别为99.54%和99.8%,镀AR膜CaF₂窗口能承受4.3kW/cm²的连续波DF激光辐射。     

Graded index broadband antireflection coating prepared by glancing angle deposition for a high-power laser system

This paper reports that SiO₂ is selected to fabricate broadband antireflection (AR) coatings on fused silica substrate by using glancing angle deposition and physical vapour deposition. Through accurate control of the graded index of the SiO₂ layer, transmittance of the graded broadband AR coating can achieve an average value of 98% across a spectral range of 300--1850~nm. Moreover, a laser-induced damage threshold measurement of the fabricated AR coating is performed by using a one-on-one protocol according to ISO11254-1, resulting in an average damage threshold of 17.2~J/cm$^{2}$.     

Enhanced laser induced damage threshold of dielectric antireflection coatings by the introduction of one interfacial layer

A new method for increasing laser induced damage threshold (LIDT) of dielectric antireflection (AR) coating is proposed. Compared with AR film stack of H2.5L (H:HfO2, L:SiO2) on BK7 substrate, SiO2 interfacial layer with four quarter wavelength optical thickness (QWOT) is deposited on the substrate before the preparation of H2.5L film. It is found that the introduction of SiO2 interfacial layer with a certain thickness is effective and flexible to increase the LIDT of dielectric AR coatings. The measured LIDT is enhanced by about 50%, while remaining the low reflectivity with less than 0.09% at the center wavelength of 1064 nm. Detailed mechanisms of the LIDT enhancement are discussed.     

Use of porous silicon for double- and triple-layer antireflection coatings in silicon photovoltaic converters

Reflectance spectrum calculations of double- and triple-layer antireflection coatings made of porous silicon layer are performed, using the optical matrix approach method. Obtained results are compared with the reflectance spectrum of other type antireflection coatings. Lower reflectance value of both double- and triple-layer antireflection coatings made of porous silicon is obtained in comparison to that of SiO₂/TiO₂ antireflection coating. These results can be used in photovoltaic converters.     

Antireflection properties of germanium–carbon coating on zinc supplied substrate

In this research, germanium–carbon coatings were deposited on ZnS and glass substrates by a RF plasma enhanced chemical vapor deposition method using GeH₄ and CH₄ as precursors. ZnS/Ge_1?xC_x double-layer antireflection coating with optical thickness of one quarter wavelength was designed. The samples were characterized by fourier transform infrared spectroscopy, X-ray diffraction (XRD), field emission scanning electron microscopy and nanoindentation. The coatings exhibited a structure free of pores with a very good adhesion to substrate. Based on the XRD patterns, no diffraction peak was found, so all the coatings mainly had an amorphous structure. The infrared (IR) transmittance spectrum show that the maximum IR transmittance in the band of 1030–1330 cm^?1 was about 84.6%, which is higher than ZnS substrate by 10%. In addition, the reflection of ZnS substrate is about 25%. This system has reduced the reflection from the substrate by 15%.     

Diamond-like carbon films deposited by a hybrid ECRCVD system

A novel hybrid technique for diamond-like carbon (DLC) film deposition has been developed. This technique combines the electron cyclotron resonance chemical vapor deposition (ECRCVD) of C₂H₂ and metallic magnetron sputtering. Here we described how DLC film is used for a variety of applications such as stamper, PCB micro-tools, and threading form-tools by taking advantage of hybrid ECRCVD system. The structure of the DLC films is delineated by a function of bias voltages by Raman spectroscopy. This function includes parameters such as dependence of G peak positions and the intensity ratio (I_D/I_G). Atomic force microscope (AFM) examines the root-mean-square (R.M.S.) roughness and the surface morphology. Excellent adhesion and lower friction coefficients of a DLC film were also assessed.