Elemental steps in the growth of thin β-Ga2O3 films on CoGa(1 0 0)

The oxidation of CoGa(1 0 0) at 700 K was studied by means of high resolution electron energy loss spectroscopy (EELS), scanning tunneling microscopy, low energy electron diffraction and Auger electron spectroscopy (AES). At 700 K, thin well-ordered β-Ga₂O₃ films grow on CoGa(1 0 0). The EEL spectrum of the Ga-oxide films exhibit Fuchs–Kliewer phonons at 305, 455, 645, and 785 cm⁻¹. For low oxygen exposure (<0.2 L), the growth of oxide-islands starts at step edges and on defects. The oxide films have the shape of long, rectangular islands and are oriented in the [1 0 0] and [0 1 0] directions of the substrate. For higher oxygen exposure, islands of β-Ga₂O₃ are found also on the terraces. After an exposure of 200 L O₂ at 700 K, the CoGa(1 0 0) surface is homogeneously covered with a thin film of β-Ga₂O₃.     

Surface defects created by low energy (20 < E < 240 eV) ion bombardment of Ge(001)

Surface defects created on Ge(001) exposed to low energy Xe ions are characterized by in situ scanning tunneling microscopy (STM). The temperature of the sample during ion bombardment is 165 C and ion energies range from 20 to 240 eV. The ion collisions create defects (vacancies and adatoms) which nucleate and form vacancy and adatom islands. For fixed total vacancy creation, the vacancy island number density increases with increasing ion energy: the vacancy island number density is 1.6 × 10⁻²⁰ cm⁻² for 40 eV ion bombardment and increases to 4.4 × 10⁻²⁰ cm⁻² for 240 eV ion bombardment. The increased nucleation rate for vacancies is attributed to clustering of defects. The sputtering yield of Ge(001) is also measured by STM. The sputtering yield for 20 eV ions is approximately 10⁻³ per ion but the net yield for surface defects (sum of adatoms and vacancies) is an order of magnitude higher, 10⁻², due to adatom-vacancy pair creation.     

表面等离激元对氮化硅薄膜中Tb3+离子荧光寿命的影响

利用等离子增强化学气相沉积和离子注入方法,制备了铽掺杂的氮化硅薄膜,然后利用磁控溅射和热处理工艺在薄膜上沉积了不同颗粒尺寸的银薄膜来研究表面等离激元共振对铽离子荧光寿命的影响.实验结果表明氮化硅中Tb³⁺离子的光致荧光最强峰在547 nm,而银薄膜的存在会明显降低稀土离子Tb³⁺的荧光寿命,其寿命的改变是由于银薄膜的表面等离激元改变了电磁场的分布,从而影响了系统的局域光模密度(PMD),理论计算的结果也验证了这一点.     

The adsorbate-induced removal of the Pt{100} surface reconstruction Part I: NO

The molecular adsorption of NO on both the reconstructed (hex) and unreconstructed (1 × 1) surfaces of Pt{100} has been studied using a combination of infrared reflection-absorption spectroscopy (IRAS) and low energy electron diffraction (LEED) at temperatures between 90 and 300 K. On the (1 × 1) surface at 300 K adsorbed NO gives rise to an N-O stretching band at initially 1596 cm⁻¹ shifting to 1641 cm⁻¹ at a coverage of θ = 0.5. The LEED pattern at this coverage is interpreted in terms of a c(4 × 2) structure in which all the molecules occupy a single type of adsorption site between the on-top and bridge positions. At temperatures below 300 K, a higher coverage disordered phase is observed, giving rise to an N-O stretching band at 1680 cm⁻¹ associated with an on-top NO species. On the (hex) phase surface above 210 K, NO adsorption gives rise to bands characteristic of adsorption on the (1 × 1) phase indicating that the reconstruction is immediately lifted. Below 200 K initial adsorption actually occurs directly on the (hex) phase, resulting in a band at 1680 cm⁻¹, which is assigned to on-top NO. This band increases in intensity until, at a critical coverage dependent on temperature, the (hex) → (1 × 1) surface phase transition is induced. This is indicated by the disappearance of the band at 1680 cm⁻¹ and its replacement by bands characteristic of adsorption on islands of the (1 × 1) structure.     

Room-temperature SiGe light-emitting diodes

In the present paper the electroluminescence of PIN diodes with either strained SiGe/Si or Ge islands in the i-region has been investigated experimentally and by quantitative modelling. The modelling helped to improve the diode structure. Consequently, diodes with strained Si_0.80Ge_0.20 could be improved so as to reveal emission up to room temperature, if the thickness was high enough. To overcome the thickness limitation due to plastic relaxation, we used selective epitaxy on small areas. We also present results for diodes with Ge islands in the active region. The internal quantum efficiency of light emitting diodes with strained SiGe was at room temperature 10⁻⁴, while diodes with islands emitted ten times less light.     

High temperature transport processes in lithium niobate

The electrical conductivity of single crystal lithium niobate (LiNbO₃) was determined as a function of temperature for various oxygen partial pressures. The electrical conductivity is proportional to P_o2^−1/4 which can be explained by a defect equilibrium involving singly ionized oxygen vacancies and electrons.

Measurements of electrical transport numbers at 1000°K show the electrical conductivity of LiNbO₃ to be ionic at one atmosphere of oxygen and electronic at low oxygen partial pressures.

Thermoelectric measurements indicate that LiNbO₃ at low oxygen partial pressures is n-type and that the concentration of electrons at 1000°K and in an atmosphere of 50% C0/50% CO₂a is 4 × 10¹⁷cm³ with a mobility of 1.7 cm²V sec.

The diffusion of oxygen in LiNbO₃ was determined as a function of temperature at an oxygen partial pressure of 70 Torr. by measuring O¹⁸/O¹⁶ isotope exchange with the gas phase as a function of time. The diffusion data may be represented by D = 3.03 × 10⁻⁶ exp (−29.4 kcal mole⁻¹/RT)cm²sec. Consideration of the Nernst-Einstein relation for oxygen and the variation in conductivity with Li₂O activity indicate that the ionic conduction is caused by transport of lithium ions.     

具有p-GaN岛状埋层耐压结构的横向AlGaN/GaN高电子迁移率晶体管

GaN基高电子迁移率晶体管(HEMT)相对较低的击穿电压严重限制了其大功率应用.为了进一步改善器件的击穿特性,通过在n-GaN外延缓冲层中引入六个等间距p-GaN岛掩埋缓冲层(PIBL)构成p-n结,提出一种基于p-GaN埋层结构的新型高耐压AlGaN/GaN HEMT器件结构.Sentaurus TCAD仿真结果表明,在关态高漏极电压状态下,p-GaN埋层引入的多个反向p-n结不仅能够有效调制PIBL AlGaN/GaN HEMT的表面电场和体电场分布,而且对于缓冲层泄漏电流有一定的抑制作用,这保证了栅漏间距为10μm的PIBL HEMT能够达到超过1700 V的高击穿电压(BV),是常规结构AlGaN/GaN HEMT击穿电压(580 V)的3倍.同时,PIBL结构AlGaN/GaN HEMT的特征导通电阻仅为1.47 m?·cm~2,因此获得了高达1966 MW·cm~(-2)的品质因数(FOM=BV~2/R_(on,sp)).相比于常规的AlGaN/GaN HEMT,基于新型p-GaN埋岛结构的HEMT器件在保持较低特征导通电阻的同时具有更高的击穿电压,这使得该结构在高功率电力电子器件领域具有很好的应用前景.     

Nanoscale islands and color centers in porous anodic alumina on silicon fabricated by oxalic acid

Anodic oxidation of Al film on silicon substrate in oxalic acid is investigated through the j–t curves and its photoluminescence (PL). Their growth is analyzed with three typical stages according to j–t curve, which is agreed with the growth of nanoscale SiO₂ islands at the interface between Al film and Si substrate. The violet and blue peaks of PL were due to F⁺ and F centers, respectively. The evolvement from F⁺ to F centers during the late stage of anodization was revealed by the PL behavior at different stage.     

Transient behavior of the thermal ion emission from KCl(0 0 1) upon polarity reversal of the electric extraction field

The technique of polarity reversal of the external electric extraction field (strength: 10² V/cm) was applied to study the relaxation of the thermal ion emission from the KCl(0 0 1) single crystal surface. Transient currents of the K⁺ and K₂Cl⁺ ions upon switching from the emission suppression to the ion extraction mode were recorded as a function of the evaporation time, the temperature, and the time of field reversal. The temperature dependence of the time constants of the K⁺ ions obtained from the exponential decreases of the emission currents to their steady-state emission resulted as logτ_h(s)=−(13.39±0.56)+(12.42±0.49)10³/T in a high temperature interval of 826–930 K after a prolonged heating period and as logτ_l(s)=−(20.65±1.04)+(16.77±0.81)10³/T in a low temperature interval of 750–801 K at the initial stage of evaporation, with corresponding activation energies of E_h(K⁺)=2.47±0.14 eV and E_l(K⁺)=3.32±0.16 eV, respectively. The transient currents can be interpreted by a partial adsorption of the suppressed ion currents at the kinks of the surface steps. The differences in the high- and low-temperature runs may be attributed to a strong coarsening of the surface at higher temperatures, which occurs as a bunching of monosteps to macrosteps and/or to an enrichment and segregation of divalent impurities at the surface. The transient behavior of the molecular K₂Cl⁺ ions seems to be strongly correlated with that of the K⁺ ions. This correlation is possibly caused by changes of the strength or the sign of the local electrical field connected with the excess charge at the kinks.     

近紫外光激发黄色荧光粉Ba3Y4O9：Dy3+的制备及发光特性

通过高温固相法合成了一系列Ba₃Y_4-xO₉：xDy³⁺荧光粉材料。利用X射线粉末衍射、荧光光谱和荧光寿命对样品进行了表征。实验表明,样品的激发光谱由一系列线状峰组成,峰值分别位于328,355,368,386,427,456,471 nm。在355 nm激发下,荧光粉在490 nm（⁴F_9/2→⁶H_15/2）和580 nm（⁴F_9/2→⁶H_13/2）处有很强的发射,发射光谱的色坐标位于黄光区域。研究了不同Dy³⁺掺杂浓度对样品发光性质的影响,发现样品的发光随着Dy³⁺浓度的增大而增强,但光谱形状基本保持不变,表明Dy³⁺占据了基质中低对称性的Y³⁺格位。当Dy³⁺摩尔分数x=0.08时出现发光强度猝灭现象,浓度猝灭机理为电偶极-电偶极相互作用。样品的发光寿命随着Dy³⁺浓度的增大逐渐减小,进一步证明了Dy³⁺离子之间存在着能量传递现象。Ba₃Y₄O₉：Dy³⁺荧光粉的发光位于黄光区域,有较好的热稳定性,是潜在的白光LED用荧光粉材料。     

The influence of crystallographic steps on coadsorption: CO---O/Ni(119)

On low index nickel surfaces, repulsive interactions between atomic oxygen and CO drive the phase separation of these species into oxygen-rich and CO-rich islands. Because these adsorbates interact differently with crystallographic steps, the size and the structure of these islands are modified on stepped surfaces. We have monitored coadsorption-induced changes in the distribution of CO with IRRAS, observing six different CO stretching bands which are assigned to distinct local chemisorption environments. When oxygen fully saturates sites along the step edge, the steps are completely blocked from CO adsorption and virtually all the CO population on the terraces shifts from atop to bridge sites. This terrace site shift is similarly accomplished by atomic oxygen chemisorbed at terrace sites. From these coadsorption-induced changes in CO site distributions, constrained by the 10 Å terrace width, we conclude the through-metal O---CO interaction responsible for this CO site shift must be operative over a range of 5 Å. At θ_o = 0.18 ML, when oxygen occupies, but does not fully saturate the step edge, a new CO adsorption site is created, with a characteristic frequency of 1750 cm⁻¹. This new site is assigned to CO bonded to kinks along the step edge based upon its low intensity ( geometric kink density), enhanced binding strength and sensitivity to oxygen coverage. At higher oxygen coverages, compression of the CO adlayer is observed, with CO shifting to asymmetric bridge sites. As saturation coverage is approached, CO occupies weakly bound sites in close proximity ( 3 Å) to O adatoms, with high characteristic frequencies of 2100 cm⁻¹.     

Defect versus nanocrystal luminescence emitted from room temperature and hot-implanted SiO2 layers

Silicon nanocrystals have been synthesized in SiO₂ matrix using Si ion implantation. Si ions were implanted into 300-nm-thick SiO₂ films grown on crystalline Si at energies of 30–55 keV, and with doses of 5×10¹⁵, 3×10¹⁶, and 1×10¹⁷ cm⁻². Implanted samples were subsequently annealed in an N₂ ambient at 500–1100°C during various periods. Photoluminescence spectra for the sample implanted with 1×10¹⁷ cm⁻² at 55 keV show that red luminescence (750 nm) related to Si-nanocrystals clearly increases with annealing temperature and time in intensity, and that weak orange luminescence (600 nm) is observed after annealing at low temperatures of 500°C and 800°C. The luminescence around 600 nm becomes very intense when a thin SiO₂ sample is implanted at a substrate temperature of 400°C with an energy of 30 keV and a low dose of 5×10¹⁵ cm⁻². It vanishes after annealing at 800°C for 30 min. We conclude that this luminescence observed around 600 nm is caused by some radiative defects formed in Si-implanted SiO₂.     

微波低温制备Mg2Si0.4Sn0.6-yBiy热电材料的传输机理

德拜弛豫理论表明, 在频率为2.45 GHz的外加交变电磁场的作用下, 微波对极性分子的极化过程约为10^-10 s, 因此利用微波固相反应可以在短时低温条件下制备出纳米粉体材料. 本文以MgH₂代替Mg粉, 利用微波固相反应在低温下制备了Mg₂Si_0.4Sn_0.6-yBi_y (0 ≤y ≤q 0.03)固溶体, 并结合单带抛物线计算模型对其热电传输机理进行了分析. 研究结果表明: 利用该工艺可以有效抑制Mg的挥发和MgO 的生成, 在400 ℃保温15 min内即可完成MgH₂与Si粉和Sn粉的固相反应, 获得片层间距为100 nm的超细化学计量比产物; 杂质Bi的引入可以有效增加载流子浓度, 并引起晶格畸变, 在晶格畸变和样品特有的纳米片层结构的协同作用下, 声子得到有效散射, 样品具有最低的热导率1.36 W·m^-1·K^-1. 较低的有效掺杂率和复杂的能带结构具有降低能带态密度有效质量和减小载流子弛豫时间的双刃效应, 使得本征激发提前, 在600 K样品取得最大ZT值为0.66.     

Joint transfer of time and frequency signals and multi-point synchronization via fiber network

A system of jointly transferring time signals with a rate of 1 pulse per second(PPS) and frequency signals of 10 MHz via a dense wavelength division multiplex-based(DWDM) fiber is demonstrated in this paper.The noises of the fiber links are suppressed and compensated for by a controlled fiber delay line.A method of calibrating and characterizing time is described.The 1PPS is synchronized by feed-forward calibrating the fiber delays precisely.The system is experimentally examined via a 110 km spooled fiber in laboratory.The frequency stabilities of the user end with compensation are1.8×10~(-14) at 1 s and 2.0×10~(-17) at 10~4 s average time.The calculated uncertainty of time synchronization is 13.1 ps,whereas the direct measurement of the uncertainty is 12 ps.Next,the frequency and 1PPS are transferred via a metropolitan area optical fiber network from one central site to two remote sites with distances of 14 km and 110 km.The frequency stabilities of 14 km link reach 3.0×10~(-14) averaged in 1 s and 1.4×10~(-17) in 10~4 s respectively;and the stabilities of 110 km link are 8.3×10~(-14) and 1.7×10~(-17),respectively.The accuracies of synchronization are estimated to be 12.3 ps for the14 km link and 13.1 ps for the 110 km link,respectively.     

Relationship between electronic and crystal structure in Cu–Ni–Co–Mn–O spinels: Part A: Temperature-induced structural transformation

Local atomic and crystal structures around Cu and Mn atoms in Mn_1.68Cu_0.6Ni_0.48Co_0.24O₄ spinel samples fabricated by metal–organic decomposition synthesis at different annealing temperatures were investigated by X-ray absorption fine structure analysis. There are two distinct copper cations, Cu¹⁺ and Cu²⁺, both of which maintain tetrahedral coordination. The bond-length distances are Cu¹⁺–O = 2.00 Å and Cu²⁺–O = 1.80 Å. The manganese cations are for the most part octahedral. The spinels prepared at low temperature (600 °C) contain smaller (Mn⁴⁺–O = 1.88 Å) undistorted MnO₆ octahedrons corresponding to Mn⁴⁺ valence, whereas the manganese octahedrons in high-temperature materials (800 °C and higher) were larger and had a pronounced tetragonal distortion pertaining to Mn³⁺ oxidation state (Mn³⁺–O = 1.93 Å and 2.11 Å). By rising the fabrication temperatures, relative concentration of the species of Mn⁴⁺ and Mn³⁺ varies as a result of the reaction represented by Cu¹⁺ + Mn⁴⁺  Cu²⁺ + Mn³⁺, implying irreversible temperature-induced structural transformation. Atomic coordinates in the low-temperature phase are similar to those found in the ideal cubic spinel with oxygen parameter u = 0.27, whereas local environments of the Cu and Mn atom correspond to the tetragonal CuMn₂O₄ phase (space group I4₁/amd). Unlike in CuMn₂O₄, orientation of the lattice distortions is random, however, the long-range cubic spinel structure is retained at all time.     

氟利昂F1110分子在飞秒激光脉冲作用下的多光子解离动力学

含氟利昂在内的含氯化合物在太阳光辐射下解离生成破坏臭氧的游离态氯原子, 是破坏大气臭氧层的主要元凶. 本文利用飞行时间质谱技术及离子速度成像技术研究了氟利昂F1110(四氯乙烯)分子在800 nm飞秒脉冲光作用下的多光子解离动力学. 利用飞行时间质谱探测技术, 得到了四氯乙烯在800 nm飞秒激光脉冲作用下发生多光子解离产生的碎片质谱, 发现了两个主要碎片离子C₂Cl₃⁺和 C₂Cl₂⁺. 对应的解离机理分别为单个C-Cl键断裂直接生产氯自由基C₂Cl₄⁺→C₂Cl₃⁺ +Cl 和两个C—Cl 键断裂C₂Cl₄⁺→C₂Cl₂⁺+2Cl: 利用离子速度成像技术对这两种机理产生的碎片离子进行成像, 得到了C₂Cl₃⁺ 和C₂Cl₂⁺ 离子的速度影像. 分析发现这两个碎片离子的动能分布均可由两个高斯分布曲线拟合, 说明这两种解离机理分别还对应了两种解离通道. 通过影像分析得到了解离的平动能分布和角向分布各向异性参数等详尽的动力学信息. 通过高精度密度泛函理论计算对解离动力学进行了进一步的分析和讨论.     

Residence time of metal ions generated from microsecond vacuum arcs

Vacuum gaps of 1 mm with lead or copper cathode are fired by a 13 μs duration sinusoidal arc or a 10 μs duration exponentially-decaying arc, and time-of-flight (TOF) ion measurements are made at variable times after the arc ignition. At the lead cathode, Pb⁺ and Pb⁺⁺ ions are generated and the upper limit on the times for Pb⁺ ion detection are 48 μs and 46 μs from the arc ignition for the sinusoidal and exponential arcs, respectively. At the copper cathode, Cu⁺, Cu⁺⁺, and Cu⁺⁺⁺ ions are generated and detected within 15 μs and 13 μs from the arc ignition for the sinusoidal and exponential arcs, respectively. The residence time of the Pb⁺ ions in the ion acceleration region is approximately 35 μs, regardless of the waveform of the arc current. The residence time of the copper ions, described by the time constant of the time-of-flight ion current delay characteristics, is 3 μs     

微乳液法制备NaYF4：Yb3+, Er3+粉体及其发光性能

采用微乳液法制备了纯相立方和六方晶相NaYF₄：Yb³⁺,Er³⁺发光材料,微乳液体系选择了CTAB（十六烷基三甲基溴化铵）-正丁醇-正辛烷-水。研究了NaF/Y³⁺比例、反应温度、反应时间和体系pH值等对相形成的影响,以及陈化、后续热处理温度和时间对颗粒尺寸和发光性能的影响。结果表明：在NaF/Y³⁺比例小于5、体系pH=5~6、反应温度为140 ℃、反应时间为24 h的条件下,可得到立方相α-NaYF₄：Yb³⁺,Er³⁺,粒径约为200 nm;在NaF/Y³⁺比例大于5、体系pH=1~4、反应温度为160 ℃、反应时间为60 h以上的条件下,可得到六方相β-NaYF₄：Yb³⁺,Er³⁺,粒径约为1 μm。样品在980 nm激光激发下,在521,529,541,549 nm 处有发光峰,最强发光峰为541 nm,表现为明亮的绿色。     

Short-range order and F ion diffusion inside the Pb1 − xAlxF2 + x solid solution Part I: F-NMR investigation

A ¹⁹F-NMR investigation of the Pb_{1 − x}Al_xF_{2 + x} (0 ≤ x ≤ 0.12) solid solution and of the ordered Pb₉Al₂F₂₄ phase is undertaken as a function of temperature. Several F⁻ ion groups become progressively mobile at the NMR time scale at increasing temperature, the first, (F_i)_pb and (F_n)_pb, are located in the surroundings of Pb²⁺ cations, the second ones, (F_rd)_AI and (F_ra)_Al, in that of Al³⁺ cations. Four types of fluoride ions are distinguished in the ¹⁹F-NMR spectra of rigid lattice at low temperature (T = 175 K) and the distribution of fluoride ions among the four sites is determined by deconvolution of the spectra registered. The sites occupied by the (F_n)_pb anions are identified with the normal anionic sites of the fluorite network, the others with different interstitial sites.     

荧光粉CaWO4：Eu3+中WO42-与Eu3+间的能量转递

通过高温固相法分别制备了CaWO₄和CaWO₄:1%Eu³⁺ 样品. 测量了样品不同温度(10–300 K)的荧光光谱、荧光衰减曲线和 时间分辨荧光光谱. 样品的荧光光谱表明: 在240 nm紫外光激发下, 两个样品在430 nm处都展现出来源于WO₄^2-的蓝色发射; 样品CaWO₄:Eu³⁺的Eu³⁺(⁵D₀→⁷F_{1, 2, 3,4})的特征发射则归属于WO₄^2-到Eu³⁺ 间的能量传递.由样品室温(300K)荧光衰减曲线发现: 纯CaWO₄的荧光寿命为8.85μs,Eu³⁺掺杂之后WO₄^2-的荧光寿命缩短至6.27μs,这从另一方面证明了WO₄^2-与Eu³⁺间能量传递的存在. 由荧光寿命得到T=300K时, CaWO₄: 1%Eu³⁺中WO₄^2-与Eu³⁺间的能量传递效率(η_ET)为29.2%, 能量传递速率(ω_ET)为4.65×10⁴ s^-1.通过时间分辨荧光光谱, 获得了从WO₄^2-到Eu³⁺之间的能量传递的时间演变过程,当温度由10 K增加到300 K时, 能量传递出现的时间单调变小. 测试了不同温度(10–300 K)对CaWO₄:Eu³⁺的荧光寿命的影响, 发现在10–50K时,Eu³⁺的荧光寿命增加, 但温度超过50K时发生猝灭, 荧光寿命开始下降; WO₄^2-的荧光寿命则是随着温度的升高逐渐缩短. 关键词： 能量传递 红色荧光粉 温度依赖 4：Eu³⁺')" href="#">CaWO₄：Eu³⁺