Multi-order diffractive optical elements for achromatic interconnections at 1.30 μm and 1.55 μm

We propose a class of diffractive components allowing free-space optical systems to operate at the two telecommunication wavelengths simultaneously. These are fifth order diffractive components working at the sixth order at 1.30 μm and at the fifth order at 1.55 μm. Simulation results showing the link efficiency between two single-mode fibres as a function of the wavelength are presented. The width of the two transmission windows depends on the architecture of the whole system, which must be designed in accordance with technological realizability.     

External cavity quantum dot tunable laser through 1.55 μm

The optical performance of InAs/InGaAsP quantum dot (QD) lasers grown on (1 0 0) InP was studied for three different material structures. The most efficient QD laser structure, having a threshold current of 107 mA and an external differential quantum efficiency of 9.4% at room temperature, was used to form the active region of a grating-coupled external cavity tunable laser. A tuning range of 110 nm was demonstrated, which was mainly limited by the mirror and internal losses of the uncoated laser diode. Rapid state-filling of the QDs was also demonstrated by observing the evolution of the spectra with increasing injected current.     

GaInAsSb/AlGaAsSb lasers in the wavelength range between 2.73 μm and 2.93 μm

Compressively strained multiple quantum well lasers in the GaInAsSb/AlGaAsSb material system are reported. Indium concentrations between 40% and 47.5% were chosen for the GaInAsSb quantum wells. Compressive strains varied between 1.16% and 1.43%. The lasers worked continuous wave at room temperature up to a wavelength of 2.81 μm. For a laser with 2.93 μm wavelength continuous wave operation was found up to a temperature of −23°C. This laser worked in pulsed operation at 15°C.     

A technique for active measurement of atmospheric transmittance using an imaging system: implementation at 10.6 μm wavelength

An active method is presented for measuring atmospheric transmittance with an imaging system. In comparison to other measurement methods, this method has the advantage of immunity to background noise, independence of atmospheric conditions such as solar radiation, and an improved capability to evaluate effects of turbulence on the measurements. Other significant advantages are integration over all particulate size distribution effects including very small and very large particulates whose concentration is hard to measure, and the fact that this method is a path-integrated measurement. Attenuation deriving from molecular absorption and from small and large particulate scatter and absorption and their weather dependences are separated out. Preliminary results indicate high correlation with direct transmittance calculations via particle size distribution measurement, and that even at 10.6 μm wavelength atmospheric transmission depends noticeably on aerosol size distribution and concentration.     

Automatic recording transmissometer for atmospheric attenuation measurements at 0.9 μm wavelength

The design and performance of a double-ended transmissometer that accurately records the frequency and magnitude of atmospheric attenuation due to mists and fogs is described. Transmission data, covering a 50 dB dynamic range, is recorded automatically at five minute intervals on magnetic tape. The system is battery operated and capable of unattended operation for a period of one month. Results obtained, following the use of the equipment at an outdoor site for a year, are also presented.     

SiGe (Ge-dot) heterojunction phototransistors for efficient light detection at 1.3–1.55 μm

The aim of this work is to develop a Si/SiGe HBT-type phototransistor with several Ge dot layers incorporated in the collector, in order to obtain improved light detectivity at 1.3–1.55 μm. The MBE grown HBT detectors are of n–p–n type and based on a multilayer structure containing 10 Ge-dot layers (8 ML in each layer, separated by 60 nm Si spacer) in the base-collector junction. The transistors were processed for normal incidence or with waveguide geometry where the light is coupled through the edge of the sample. The measured breakdown voltage, BV_ceo, was about 6 V. Compared to a p–i–n reference photodiode with the same dot layer structure, photoconductivity measurements show that the responsivity is improved by a factor of 60 for normal incidence at 1.3 μm. When the light is coupled through the edge of the device, the detectivity is even further enhanced. The measured photo-responsivity is more than 100 and 5 mA/W at 1.3 and 1.55 μm, respectively.     

High-speed optical digital transmitter/receiver module operating at 1.3 μm wavelength

Taking benefit of optical fibers' wide bandwidth and low attenuation, research and development were conducted in order to apply fiber optics to public telecommunications' networks mainly for long-distance and large-capacity transmissions. However, application of fiber has rapidly spread toward cornrnunication networks having relatively short transmission distances (within several kilometers) such as local area networks (LAN) and computer networks. Thus, requirements for the fiber optic transmitters and receivers used as electro-optic transducers, such as small-size, low-price, high-reliability and low-supply voltage operations, become stricter than those of the public telecommunication network.     

Novel 0.98/1.55 μm dichroic coupler based on lithium niobate

A novel 0.98/1.55 μm dichroic coupler with high-extinction ratio and low insertion loss has been designed and implemented on LiNbO₃ for Erbium-doped fiber amplifier applications. The design of dichroic coupler is based on a modified directional coupler structure with a single bend in each channel. Beam propagation method is used to analyze the coupler performance to get the optimal parameters for device design, such as channel width, titanium thickness, channel gap, and interaction length. Samples with the signal coupling ratio as high as 100% and pumping power ratio as high as 95% have been obtained.     

A compact autocorrelator for the wavelength range between 4 and 10 μm

A compact autocorrelator suitable for the measurement of the optical pulse length of the infrared free electron laser (IR-FEL) at the S-DALINAC is described. It allows to investigate the energy transfer process from the electrons into the laser light within the undulator of the FEL. The autocorrelator utilizes the second harmonic generation (SHG) and it provides the possibility of a background-free measurement at wavelengths between 4 and 10 μm. Simulations for three different crystals used for SHG show that the largest efficiency for SHG and the best temporal resolution is achieved with a ZnGeP₂ crystal at a length of 2 mm. A test experiment at the free electron laser for infrared experiments confirmed the expected high efficiency of about 7.5% of SHG for the ZnGeP₂ crystal as well as the easy handling and fast adjustment of the system.     

High-speed 1.55 μm InGaAs/InGaAsP multi-quantum well λ/4-shifted DFB lasers

The high-speed modulation properties of 1.5 μm multiquantum-well λ/4-shifted DFB lasers are filly reviewed. In particular, the dependence of intrinsic dynamic properties, such as relaxation oscillation frequency, nonlinear damping phenomenon, and spectral chirping under 10 Gbit/s direct modulation, on the number of quantum wells is systematically investigated and compared with those of bulk lasers. The results indicate that the dependence of the above three factors on the number of wells is clearly explained by the linear gain saturation of the quantum-well lasers and that the optimum number of wells should be more than ten in order to increase the modulation bandwidth.     

Optical spectroscopy of single InAs/InP quantum dots around λ=1.55 μm

We discuss the preparation and spectroscopic characterisation of a single InAs/InP quantum dot suitable for long-distance quantum key distribution applications around λ=1.55 μm. The dot is prepared using a site-selective growth technique which allows a single dot to be deposited in isolation at a controlled spatial location. Micro-photoluminescence measurements as a function of exciton occupation are used to determine the electronic structure of the dot. Biexciton emission, shell filling and many-body re-normalization effects are observed for the first time in single InAs/InP quantum dots.     

Megawatt peak power 8–13 μm CdSe optical parametric generator pumped at 2.8 μm

Infrared pulses, continuously tunable in the 8–13 μm range, and with up to 1 MW peak power, have been achieved using single-stage frequency conversion in a CdSe travelling-wave optical parametric generator, pumped by 100 ps pulses from an actively mode-locked, Q-switched and cavity dumped 2.8 μm Cr,Er:YSGG laser. The external quantum conversion efficiency reached 10%.     

Single InAs/InP quantum dot spectroscopy in 1.3–1.55 μm telecommunication band

We present an optical spectroscopy and photon correlation measurement at telecommunication wavelengths performed on single InAs/InP quantum dots. Two main approaches brought high optical quality: an application of a ‘double-cap’ growth method to metalorganic chemical vapor deposition, and fabrication of a small mesa structure using low-damage wet chemical etching. Sharp and discrete exciton transition lines have been observed on the single quantum dots, which widely cover the spectral range of 1.3–1.55 μm. Using a pulsed excitation source and gated single-photon detection modules, we observed a photon antibunching behavior for an isolated exciton emission line, indicating nonclassical light emission near the wavelength of 1.3 μm.     

1.55 μm InGaAsP/InP tapered stripe superluminescent diodes with potential optical sensor system applications

We proposed a structure of a 1.55 μm InGaAsP/InP superluminescent diode (SLD) to suppress the lasing action and fabricated laterally tilted multi-quantum well planar buried heterostructure separate confinement heterostructure SLD by using MOCVD and LPE equipments. The fabricated SLD is laterally tilted by 15°. The output power of SLD was 11 mW for 200 mA under pulse driving. The full-width at half-maximum was 42 nm at 200 mA.     

Room temperature CW lasing operation of monolithically grown 1.55 μm vertical external cavity surface emitting laser

We report room temperature (20 °C) continuous-wave operation of 1.55 μm vertical-external-cavity surface-emitting lasers. The optically pumped monolithic InP-based structure, grown by metal–organic chemical vapor deposition, includes a InP/InGaAsP Bragg reflector, and an active region with strain compensated quantum wells. Output power up to 4 mW is obtained at 0 °C. The thermal impedance of the structure is deduced from the experimental data.     

Improved drawing conditions for very low loss 1.55-μm dispersion-shifted fiber

Fiber drawing conditions (temperature, speed, tension) have been investigated to reach very low losses (0.20 dB/km at 1.55 μm) with MCVD triangular core-profile preforms. Such dispersion-shifted fibers exhibit good mechanical, splicing, cabling, and ageing properties.     

Gas source MBE grown wavelength extended 2.2 and 2.5 μm InGaAs PIN photodetectors

Using homo-junction structure and relative thin linear graded In_xGa_1−xAs as the buffer layer, extended wavelength InGaAs PIN photodetectors with cut-off wavelength of 2.2 and 2.5 μm at room temperature have been grown by using GSMBE, and their performance over a wide temperature range have been extensively investigated. For those 2.2 or 2.5 μm detectors with 100 μm diameter, the typical dark current (V_R = 10 mV) and R₀A are 57 nA/10.3 Ω cm² or 67 nA/12.7 Ω cm² at 290 K, and 84 pA/4.70 kΩ cm² or 161 pA/3.12 kΩ cm² at 210 K respectively. The thermal activation energies of the dark current are 0.447 eV or 0.404 eV for 2.2 or 2.5 μm detectors respectively.     

Common black coatings – reflectance and ageing characteristics in the 0.32–14.3 μm wavelength range

The diffuse and regular reflectances of five optically absorbing coatings frequently used in optical systems, were measured over the 0.32–14.3 μm wavelength range, before and after exposure to heat and intense optical radiation. The measured coatings included Nextel Velvet Black, an anodised coating and NPL Super Black. The anodised coating exhibited substantial variations in its diffuse and regular reflectance values after thermal and simulated solar ageing. Solar and thermal ageing of the Nextel Velvet Black resulted in increases of its reflectance. However, thermal ageing tended to decrease the reflectance of the other paint samples examined. Thermal and solar ageing of the NPL Super Black resulted in only minor changes in its reflectance characteristics. All measurements are traceable to the UK National Standards.     

Performance of CW NYAB laser at 1.06 μm end-pumped by a high-power diode-laser-array

A CW NYAB laser at 1.06 μm end-pumped by a high-power diode-laser-array has been demonstrated. At the incident pump power of 11 W, a maximum output power of 3.2 W was achieved, resulting in an optical conversion efficiency of 29.1%, and average slope efficiency of 37.5%. The output beam quality factor was measured to be M²=1.9. The internal losses caused by the NYAB crystal were measured to be 0.035 cm⁻¹. The NYAB crystal was also found to exhibit very strong thermal lensing under high-power end-pumped conditions.     

Transmission experiments in the 1.2-1.6 μm wavelength region using graded-index optical fiber cables

Optical fiber transmission systems with extremely long repeater spacing are very attractive for various applications both in land and undersea communication systems. This paper describes the results of transmission experiments, using low-loss fibers in the 1.2-1.6 μm wavelength region. Graded-index optical fibers having an optimum profile at 1.27 μm were manufactured in cables. Average bandwidth was 1,275 MHz-km, and the average optical loss was 0.6 dB/km. The 52.6-km and 62.3-km repeater spacings were realized at 100 Mb/s and 32 Mb/s transmission, respectively, using InGaAsP/InP LD and Ge-APD. The 21.5-km and 12.0-km repeater spacings at 32 Mb/s were also realized by 1.2μm and 1.5μm LEDS, respectively.