Effects of Electric Field on Electronic States in a GaAs/GaAlAs Quantum Dot with Different Confinements

Binding energies of shallow hydrogenic impurity in a GaAs/GaAlAs quantum dot with spherical confinement, parabolic confinement and rectangular confinement are calculated as a function of dot radius in the influence of electric field. The binding energy is calculated following a variational procedure within the effective mass approximation along with the spatial depended dielectric function. A finite confining potential well with depth is determined by the discontinuity of the band gap in the quantum dot and the cladding. It is found that the contribution of spatially dependent screening effects are small for a donor impurity and it is concluded that the rectangulax confinement is better than the parabolic and spherical confinements. These results are compared with the existing literature.     

Correlations of conductance peaks and transmission phases in deformed quantum dots

We investigate the Coulomb blockade resonances and the phase of the transmission amplitude of a deformed ballistic quantum dot weakly coupled to leads. We show that preferred single-particle levels exist which stay close to the Fermi energy for a wide range of values of the gate voltage. These states give rise to sequences of Coulomb blockade resonances with correlated peak heights and transmission phases. The correlation of the peak heights becomes stronger with increasing temperature. The phase of the transmission amplitude shows lapses by between the resonances. Implications for recent experiments on ballistic quantum dots are discussed. Received 17 July 1998     

The multilayered spherical quantum dot under a magnetic field

The binding energy of an impurity located at the center of multilayered spherical quantum dot (MSQD) is reported as a function of the dot and barrier thickness for different alloy compositions under the influence of a magnetic field. Within the effective mass approximation, the binding energy has been calculated using the fourth order Runge-Kutta method without magnetic field. A variational approach has been employed if a magnetic field is present. The binding energy in MSQD with equal dot and barrier thickness is calculated. It is shown that the binding energy in MSQD differs from that of a single quantum dot. Also, the geometry is dominant on the binding energy for thin MSQDs, but the magnetic field becomes more effective for thick MSQDs.     

Onion like growth and inverted many-particle energies in quantum dots

Use of surfactants like antimony in MOCVD growth enables novel growth regimes for quantum dots (QDs). The quantum dot ensemble luminescence no longer appears as a single inhomogeneously broadened peak but shows a multi-modal structure. Quantum dot subensembles are forming which differ in height by exactly one monolayer. For the first time the systematic dependence of excitonic properties on quantum dot size and shape can be investigated in detail. Both biexcitonic binding energy and excitonic fine-structure splitting vary from large positive through zero to negative values. Correlation and piezoelectric effects explain the observations.     

Exciton bound to an ionized donor impurity in GaAs/Ga1−xAlxAs ellipsoidal finite-potential quantum dots under hydrostatic pressure

In the framework of perturbation theory, a variational method is used to study the ground state of a donor bound exciton in a weakly prolate GaAs/Ga_1−xAl_xAs ellipsoidal finite-potential quantum dot under hydrostatic pressure. The analytic expressions for the Hamiltonian of the system have been obtained and the binding energy of the bound exciton is calculated. The results show that the binding energy decreases as the symmetry of the dot shape reduces. The pressure and Al concentration have a considerable influence on the bound exciton. The binding energy increases monotonically as the pressure or Al concentration increases, and the influence of pressure or Al concentration is more pronounced for small quantum dot size.     

Hydrogenic impurity states in zinc-blende GaN/AlN coupled quantum dots

Based on the effective-mass approximation, we have calculated the donor binding energy of a hydrogenic impurity in zinc-blende (ZB) GaN/AlN coupled quantum dots (QDs) using a variational method. Numerical results show that the donor binding energy is highly dependent on the impurity position and coupled QDs structural parameters. The donor binding energy is largest when the impurity is located at the center of quantum dot. When the impurity is located at the interdot barrier edge, the donor binding energy has a minimum value with increasing the interdot barrier width.     

Hydrogenic impurity in double quantum dots

The ground state binding energy and the average interparticle distances for a hydrogenic impurity in double quantum dots with Gaussian confinement potential are studied by the variational method. The probability density of the electron is calculated, too. The dependence of the binding energy on the impurity position is investigated for GaAs quantum dots. The result shows that the binding energy has a minimum as a function of the distance between the two quantum dots when the impurity is located at the center of one quantum dot or at the center of the edge of one quantum dot. When the impurity is located at the center of the two dots, the binding energy decreases monotonically.     

Bound polaron in a wurtzite GaN/AlxGa1 − xN ellipsoidal finite-potential quantum dot

A variational method is used to study the ground state of a bound polaron in a weakly oblate wurtzite GaN/Al_xGa_1 − xN ellipsoidal quantum dot. The binding energy of the bound polaron is calculated by taking the electron couples with both branches of LO-like and TO-like phonons due to the anisotropic effect into account. The interaction between impurity and phonons has also been considered to obtain the binding energy of a bound polaron. The results show that the binding energy of bound polaron reaches a peak value as the quantum dot radius increases and then diminishes for the finite potential well. We found that the binding energy of bound polaron is reduced by the phonons effect on the impurity states, the contribution of LO-like phonon to the binding energy is dominant, the anisotropic angle and ellipticity influence on the binding energy are small.     

Hydrogenic impurity states in zinc-blende InGaN quantum dot

Within the framework of effective-mass approximation, the binding energy of a hydrogenic donor impurity in a zinc-blende (ZB) InGaN/GaN cylindrical quantum dot (QD) is investigated using a variational procedure. Numerical results show that the donor binding energy is highly dependent on impurity position and QD size. The donor binding energy E_b is largest when the impurity is located at the center of the QD. The donor binding energy is decreased when the dot height (radius) is increased.     

Kinetics of dark excitons and excitonic trions in InGaAs single quantum well

Magnetooptical studies performed on a wide InGaAs/GaAs single quantum well indicate that optically non-active (dark) excitons with total angular momentum play the role of a reservoir for the creation of free multiparticle excitonic complexes. After analyzing the magnetic field evolution of the circularly polarized components of the low energy structure appearing in the main excitonic luminescence line we assign this feature to the excitonic trion formation. The binding energy of the excitonic trions was estimated to be of the order of 1 meV. Received: 29 October 1997 / Received in final form: 20 February 1998 / Accepted: 21 February 1998     

Thermopower of a multilevel quantum dot coupled with leads in Coulomb blockade

We study the thermopower of a multilevel quantum dot which is coupled with the two leads. From our theoretic results, the thermopower of a multilevel quantum dot shows an oscillatory dependence on the gate voltage, which has been found in a lot of experiment data. The Fano effect of the electronic transport through the multilevel quantum dot is also shown as an obvious asymmetric line shape of the thermopower which come from the interference between the resonant and nonresonant multilevel paths of the conductive electrons. In addition, at the higher temperature, to thermopower, not conductance, it is the multilevel that is much easier to do contribution to the Fano effect.     

The phonon effects on the impurity states in cylindrical quantum wire with a finite confining potential

The variational method and the effective mass approximation are applied to calculate the binding energies of the hydrogenic impurity states in a cylindrical quantum wire with finite deep potential well. The phonon effects on the impurity states are considered by taking both the couplings of the electron-phonon and the impurity ion-phonon into account. The numerical results for the GaAs cylindrical quantum wire are given and discussed. It is found that the ion-phonon interaction reduces the impurity binding energy and supplies key contribution to the energy shift, but the electron-phonon coupling enhances the binding energy less. Longitudinal optical (LO) phonons play more important role than interface optical (IO) phonons in the impurity potential screening. The polaron effect caused by LO phonons is more important when the wire is thinner, otherwise the LO phonons are dominant for the thicker wires.     

抛物形量子点中弱耦合极化子的性质

采用线性组合算符和幺正变换方法研究了抛物形量子点中弱耦合极化子的基态能量和束缚能。计算结果表明,基态能量和束缚能随有效束缚强度增加而减小。随着有效束缚强度逐渐加大,最后逐渐趋于体结构极化子的基态能量。当有效束缚强度给定,基态能随电子-体纵光学声子耦合强度增加而减小。由于有效束缚强度与量子点受限强度平方根成反比,所以量子点受限越强,基态能和束缚能越大,电子-体纵光学声子耦合强度的变化对量子点的影响越小。当量子点受限变弱时,电子-体纵光学声子耦合强度变化对量子点的影响变大。所以在量子点弱受限区域,极化子对量子点的影响不容忽略。     

Quantum corrections to the conductance of a square quantum dot with soft confinement

We study the conductance of a square quantum dot, modeling the potential with a self-consistent Thomas-Fermi approximation. The resulting potential is characterized by level statistics indicative of mixed chaotic and regular electron dynamics within the dot in spite of the regular geometry of the gates defining the dot. We calculate numerically, for the case of a quantum dot with soft confinement, the weak localization (WL) correction. We demonstrate that this confining potential may generate either Lorentzian or linear lineshapes depending on the number of modes in the leads. Finally, we present experimental WL data for a lithographically square dot and compare the results with numerical calculations. We analyze the experimental results and numerical simulations in terms of semiclassical and random matrix theory (RMT) predictions and discuss their limitations as far as real experimental structures are concerned. Our results indicate that direct application of the above predictions to distinguish between chaotic and regular dynamics in a particular cavity can not always lead to reliable conclusions as the shape and magnitude of the WL correction can be strongly sensitive to the geometry-specific, non-universal features of the system. Received 13 May 1998     

Squeezed magnetobipolarons in two-dimensional quantum dot

In this Letter, a different method was given for calculating the energies of the magnetobipolarons confined in a parabolic QD (quantum dot). We introduced single-mode squeezed states transformation, which are based on the Lee-Low-Pines and Huybrechts (LLP-H) canonical transformations. This method can provide results not only for the ground state energy but also for the excited states energies. Moreover, it can be applied to the entire range of the electron-phonon coupling strength. Comparing with the results of the LLP-H transformations, we have obtained more accurate results for the ground state energy, excited states energies and binding energy of the bipolarons. It shows that the magnetic field and the quantum dot can facilitate the formation of the bipolarons when η is smaller than some value.     

Hydrogenic donor impurity in a cubic quantum dot: effect of position-dependent effective mass

In this paper, we intend to study the effect of variable mass on the binding energy. In this regard, we apply an analytic expression for position-dependent effective mass in a cubic quantum dot. Then, we obtain the binding energies of a shallow donor in the quantum dot of GaAs/Al _x Ga_1−x As using a variational procedure within the effective mass approximation. Calculations are presented with a constant effective mass and position-dependent effective mass. It is found that (i) the binding energy decreases as the dot length increases in both the cases of constant and variable masses, (ii) an increase of binding energy is observed when the spatially varying mass is included, and (v) the binding energy shows complicated behavior when the position-dependent mass is included for the small dot size L ≤ 130 ?.     

Electric field effect on the donor impurity states in zinc-blende symmetric InGaN/GaN coupled quantum dots

Based on the effective-mass approximation, the donor binding energy in a cylindrical zinc-blende (ZB) symmetric InGaN/GaN coupled quantum dots (QDs) is investigated variationally in the presence of an applied electric field. Numerical results show that the ground-state donor binding energy is highly dependent on the impurity positions, coupled QDs structure parameters and applied electric field. The applied electric field induces an asymmetric distribution of the donor binding energy with respect to the center of the coupled QDs. When the impurity is located at the center of the right dot, the donor binding energy has a maximum value with increasing the dot height. Moreover, the donor binding energy is the largest and insensitive to the large applied electric field (F?400 kV/cm) when the impurity is located at the center of the right dot in ZB symmetric In_0.1Ga_0.9N/GaN coupled QDs. In addition, if the impurity is located inside the right dot, the donor binding energy is insensitive to large middle barrier width (Lmb?2.5 nm) of ZB symmetric In_0.1Ga_0.9N/GaN coupled QDs.     

Thermal Rectification Effect of an Interacting Quantum Dot

We investigate the nonlinear thermal transport properties of a single interacting quantum dot with two energy levels tunnel-coupled to two electrodes using nonequilibrium Green function method and Hartree-Fock decoupling approximation. In the case of asymmetric tunnel-couplings to two electrodes, for example, when the upper level of the quantum dot is open for transport, whereas the lower level is blocked, our calculations predict a strong asymmetry for the heat （energy） current, which shows that the quantum dot system may act as a thermal rectifier in this specific situation.     

Radiative life time of an exciton confined in a strained GaN/Ga1-xAlxN cylindrical dot: built-in electric field effects

The binding energy of an exciton in a wurtzite GaN/GaAlN strained cylindrical quantum dot is investigated theoretically.The strong built-in electric field due to the spontaneous and piezoelectric polarizations of a GaN/GaAlN quantum dot is included.Numerical calculations are performed using a variational procedure within the single band effective mass approximation.Valence-band anisotropy is included in our theoretical model by using different hole masses in different spatial directions.The exciton oscillator strength and the exciton lifetime for radiative recombination each as a function of dot radius have been computed.The result elucidates that the strong built-in electric field influences the oscillator strength and the recombination life time of the exciton.It is observed that the ground state exciton binding energy and the interband emission energy increase when the cylindrical quantum dot height or radius is decreased,and that the exciton binding energy,the oscillator strength and the radiative lifetime each as a function of structural parameters (height and radius) sensitively depend on the strong built-in electric field.The obtained results are useful for the design of some opto-photoelectronic devices.     

抛物量子点中弱耦合磁极化子的性质

应用线性组合算符和幺正变换方法研究了抛物量子点中磁极化子的基态性质。得出基态能和基态束缚能随有效束缚强度增大而减小,随回旋频率增大而增大。当有效柬缚强度给定,基态能量随电子-体纵光学声子耦合强度增加而减小。当有效束缚强度l0>0.3时,电子-体纵光学声子耦合强度的变化对量子点中弱耦合磁极化子的基态能量的影响变得显著。当有效束缚强度l0<0.3时,电子-体纵光学声子耦合强度的变化对基态能量影响很小。由于有效束缚强度与量子点受限强度的平方根成反比,所以量子点受限越强,基态能量、基态束缚能越大,电子一体纵光学声子耦合强度和磁场的变化对量子点的影响相对越小;当量子点受限变弱时,电子-声子耦合强度变化对量子点的影响变大,磁场对量子点的影响也变大,所以在量子点中,极化子对量子点的影响不容忽略。