Ultrasonic refinement of magnesium by cavitation: Clarifying the role of wall crystals

Ultrasonic irradiation during solidification has emerged as an effective means of structural refinement for both metallic and non-metallic materials. A number of mechanisms have been proposed to explain the origin of such refinement in an attempt to both understand and exploit the refining potential. One such mechanism proposed is based on the hypothesis of formation and vibration-stimulated separation of wall crystals. This work examines the role of wall crystals in ultrasonic refinement of pure magnesium and Mg-3Al-1Zn alloy, where a titanium sonotrode is immersed into the melt for direct ultrasonication at an amplitude of 30 μm and a typical frequency of 20 kHz. Evidence is produced from different perspectives to show that the wall crystal effect has a negligible influence on the significant refinement observed under ultrasonic exposure. Instead, all of the experimental evidence produced consistently supports the hypothesis of microstructural refinement originating from cavitation-enhanced heterogeneous nucleation.     

Influence of thermal stabilization on the solute concentration of the melt in directional solidification

Experiments on Al–25 at%Ni peritectic alloy consisting of melting followed by thermal stabilization ranging from 0 to 2 h were carried out in a Bridgman-type furnace. Temperature distribution, microstructure evolution and solute concentration in the mushy zone are characterized. An analytical model is proposed to evaluate the Ni concentration of the melt after thermal stabilization. Effect of temperature gradient and volume fraction of liquid phase in the mushy zone on the Ni concentration of the melt is discussed. The steady state Ni concentration of the melt is inappropriately below the initial Ni concentration of the sample. The deviation increases with decreasing temperature gradient. Finally, the influence of thermal stabilization on the solute concentration of the melt is discussed based on a comparison of Al–Ni peritectic alloys with Al–Ni hyper-eutectic alloys and Al–Cu hypo-eutectic alloys.     

An experimental investigation of the columnar-to-equiaxed grain transition in aluminum–copper hypoeutectic and eutectic alloys

Providing benchmark data of the thermal and metallographic parameters during the columnar-to-equiaxed transition (CET) in a wide range of alloy concentrations is of fundamental importance for understanding this phenomenon as well as for metallurgical and modeling purposes. The aim of this study was to investigate the columnar-to-equiaxed transition (CET) in aluminum–copper alloys of different compositions covering a wide range from 2 to 33.2 wt%Cu (eutectic composition), which were directionally solidified from a chill face. The thermal parameters studied included recalescence, cooling rates, temperature gradients and interphase velocities. We found that the temperature gradient and velocity of the liquidus interphase reached critical values at the CET; these critical values were between −0.44 and 0.09 K/mm and between 0.67 and 2.16 mm/s, respectively. The metallographic parameters analyzed were grain size, primary and secondary dendritic arm spacing and also eutectic spacing. The results obtained were compared with previous experimental studies, published predictions and models of the CET for similar alloys.     

Growth and microstructural features of laser ablated LiCoO2 thin films

Thin films of LiCoO₂ were prepared by pulsed laser deposition technique and the properties were studied in relation to the deposition parameters. The films deposited from a sintered composite target (LiCoO₂+Li₂O) in an oxygen partial pressure of 100 mTorr and at a substrate temperature of 300 °C exhibited preferred c-axis (0 0 3) orientation perpendicular to the substrate surface. The AFM data demonstrated that the films are composed of uniform distribution of fine grains with an average grain size of 80 nm. The grain size increased with an increase in substrate temperature. The (0 0 3) orientation decreased with increase in (1 0 4) orientation for the films deposited at higher substrate temperatures (>500 °C) indicating that the films’ growth is parallel to the substrate surface. The composition of the experimental films was analyzed using X-ray photoelectron spectroscopy (XPS). The binding energy peaks of Co(2p_3/2) and Co(2p_1/2) are, respectively, observed at 779.3 and 794.4 eV, which can be attributed to the Co³⁺ bonding state of LiCoO₂. The electrochemical measurements were carried out on Li//LiCoO₂ cells with a lithium metal foil as anode and LiCoO₂ film as cathode of 1.5 cm² active area using a Teflon home-made cell hardware. The Li//LiCoO₂ cells were tested in the potential range 2.6-4.2 V. Specific capacity as high as 205 mC/cm² μm was measured for the film grown at 700 °C. The growth of LiCoO₂ films were studied in relation to the deposition parameters for their effective utilization as cathode materials in solid-state microbattery application.     

Structural and optical properties of Zn(Mg,Cd)O alloy films grown by remote-plasma-enhanced MOCVD

We report the structural and optical properties of wurtzite-structure Zn(Mg,Cd)O ternary alloys. Wurtzite (0 0 0 1) Zn_1−xCd_xO and Mg_yZn_1−yO films were grown on (11–20) sapphire substrates using remote-plasma-enhanced metalorganic chemical vapor deposition. The large bowing parameters of Zn_1−xCd_xO and Mg_yZn_1−yO ternary alloys are 3.0 and 3.5, respectively, which reflects the large difference of each binary’s electronegativity. We have analyzed the broadening of photoluminescence (PL) in Zn(Mg,Cd)O alloys on alloy content by taking into account the statistical alloy fluctuation and the localization of the exciton, and have clarified that the localization of the exciton strongly affects to PL full-width at half-maximum (FWHM) in Zn(Mg,Cd)O alloys. The alloy broadenings in steady-state PL of Zn(Mg,Cd)O alloys are in good agreement with the calculated tendency by the theoretical model based on the statistical alloy fluctuation, while PL FWHM of Zn_1−xCd_xO is three times larger than the calculated results. Moreover, as another way to confirm alloy broadening, we also have done time-resolved PL measurements and derived the localized depth of the exciton in ZnO-based system, indicating a good agreement with the tendency of PL FWHM broadening.     

Shape evolution of zinc oxide from twinned disks to single spindles through solvothermal synthesis in binary solvents

Shape evolution of ZnO crystals from twinned disks to single spindles was studied through solvothermal synthesis in binary solvents N,N-diethylformamide (DEF) and methanol (MeOH). The MeOH content in DEF had large influence on the morphology of the obtained ZnO crystals. In MeOH-free DEF, well-shaped ZnO twinned disks with perfect mirror symmetry could be formed through the assembly of ZnO₄⁶⁻–julolidinium–ZnO₄⁶⁻ growth units on the (0 0 0 1) growth interfaces. For small amounts of MeOH (MeOH/DEF=0.04), elongated twinned disks were formed since the growth along the polar c-axis was enhanced. With increasing MeOH content (MeOH/DEF=0.1), twinned rods with reduced mirror symmetry were formed. When a large amount of MeOH was added to DEF (MeOH/DEF=0.5), single spindles rather than twinned disks or twinned rods were obtained. A similar shape evolution of zinc oxide was observed in binary solvents DEF and N,N-dimethylformamide (DMF), suggesting that the growth of ZnO crystals with tuneable shape and size can be controlled by the composition of the binary solvent mixture.     

Grain refinement in a AlZnMgCuTi alloy by intensive melt shearing: A multi-step nucleation mechanism

Direct chill (DC) cast ingots of wrought Al alloys conventionally require the deliberate addition of a grain refiner to provide a uniform as-cast microstructure for the optimisation of both mechanical properties and processability. Grain refiner additions have been in widespread industrial use for more than half a century. Intensive melt shearing can provide grain refinement without the need for a specific grain refiner addition for both magnesium and aluminium based alloys. In this paper we present experimental evidence of the grain refinement in an experimental wrought aluminium alloy achieved by intensive melt shearing in the liquid state prior to solidification. The mechanisms for high shear induced grain refinement are correlated with the evolution of oxides in alloys. The oxides present in liquid aluminium alloys, normally as oxide films and clusters, can be effectively dispersed by intensive shearing and then provide effective sites for the heterogeneous nucleation of Al₃Ti phase. As a result, Al₃Ti particles with a narrower size distribution and hence improved efficiency as active nucleation sites of α-aluminium grains are responsible for the achieved significant grain refinement. This is termed a multi-step nucleation mechanism.     

Formation, mechanical properties and corrosion resistance of Ti-Pd base glassy alloys

No biocompatible Ti-based glassy alloys without a harmful element have been reported. We have examined the mechanical and chemical properties of Ti-Pd-Zr-Si glassy alloy in comparison with pure Ti metal and Ti-6Al-4V alloy which have been used so far for biomaterials. The present Ti-Pd base glassy alloys do not contain Al and Ni elements which are considered to be rather toxic. Melt-spun Ti₄₅Zr_50−xPd_xSi₅ glassy alloy ribbons (x = 35, 40, 45) exhibited good bend ductility and had higher Vickers’s hardness and lower Young’s modulus as compared to pure titanium and Ti-6Al-4V alloy. In addition, the Ti₄₅Zr_50−xPd_xSi₅ glassy alloys had higher corrosion resistance and were passivated over a wide range and at the lower passive current density of approximately 10⁻² Am⁻² than at of pure titanium and Ti-6Al-4V alloy in 1 mass% lactic acid and PBS(−) solutions at 310 K.     

Effects of Nb on the formation of icosahedral quasicrystalline phase in Ti-rich Ti-Zr-Ni-Cu-Be glassy forming alloys

As-cast (Ti₄₀Zr₂₅Ni₈Cu₉Be₁₈)_100−xNb_x (0 ? x ? 5) (Ф3) glassy forming alloys were investigated in order to clarify the role of Nb on the formation of icosahedral quasicrystalline phase (I-phase) in Ti-rich Ti-Zr-Ni-Cu-Be glassy system. It is found that an I-phase is formed in Ti-Zr-Ni-Cu-Be glassy alloy by addition of Nb element; however, the nucleation rate of I-phase increases, whereas the grain growth rate decreases with increasing Nb content. Moreover, with increasing Nb content, the thermal stability against crystallization increases, while the temperature range of stability of the I-phase decreases.     

Isothermal crystallization kinetic of ZnO thin films

Zinc oxide (ZnO) thin films deposited by DC magnetron sputtering were annealed in nitrogen atmosphere at different temperatures ranging from 100 to 500 °C with a step of 100 °C; the annealing time was 6 h. In order to study the film’s crystallization kinetic, their structures were monitored by means of X-ray diffraction (XRD) analysis each hour. Variation in grain size, calculated from the XRD patterns, with annealing time and temperature, obeys the classical parabolic law of grain growth. Exponent n was found to be dependent on the annealing temperature; it ranged from 5.13 to 3.8 with increase in annealing temperature. From the obtained exponent n values we inferred that the grain growth mechanism is mainly governed by the atom jumping across the grain boundary. We have found that the grain growth is characterized by a low activation energy ranging from 22 to 24 kJ/mol.     

Different substrate materials effect on structure of ta-C films by Raman spectroscopy for magnetic recording sliders

Raman spectra, using visible (514 nm) and ultraviolet (244 nm) excitation, of tetrahedral amorphous carbon (ta-C) films of thickness of 5 nm have been studied as a function of different substrates materials. These materials are Fe-Co (Fe: 67 at.%, Co: 33 at.%) alloy, Fe-Ni alloy (Fe: 18 at.%, Ni: 82 at.%), Au and Al₂O₃-TiC (Al₂O₃: 64 at.%, TiC: 36 at.%), which are mainly used in magnetic recording sliders. The spectra show that the films deposited on Al₂O₃-TiC contain the highest sp³ content, with a lower sp³ content observed in films deposited to Fe-Co and Fe-Ni alloys. The lowest sp³ content was observed in films on the Au substrate. The results also indicate that the anti-wear performance of ta-C film on different substrates varies as Al₂O₃-TiC (the best) > Fe-Co and Fe-Ni alloy > Au (the worst). Also mechanisms are proposed to explain the effect of substrate material on these thin film properties.     

MBE growth of PbSe thin film with a 9×10 cm etch-pits density on patterned (1 1 1)-oriented Si substrate

PbSe thin film was grown on a patterned Si substrate with (1 1 1)-orientation by molecular-beam epitaxy (MBE). On the mesa, a low dislocation density of 9×10⁵ cm⁻² was confirmed by the etch-pits density (EPD) wet-etching technique. The photoluminescence (PL) intensity at room temperature from the low dislocation PbSe film was much higher than that from the PbSe film grown on the planar area, which further indicated the high-quality of PbSe thin film grown on patterned Si substrate.     

Optical and electrical properties of lithium doped nickel oxide films deposited by spray pyrolysis onto alumina substrates

Non-doped and lithium doped nickel oxide crystalline films have been prepared onto quartz and crystalline alumina substrates at high substrate temperature (600 °C) by the pneumatic spray pyrolysis process using nickel and lithium acetates as source materials. The structure of all the deposited films was the crystalline cubic phase related to NiO, although this crystalline structure was a little bit stressed for the films with higher lithium concentration. The grain size had values between 60 and 70 nm, almost independently of doping concentration. The non-doped and lithium doped films have an energy band gap of the order of 3.6 eV. Hot point probe results show that all deposited films have a p-type semiconductor behavior. From current–voltage measurements it was observed that the electrical resistivity decreases as the lithium concentration increases, indicating that the doping action of lithium is carried out. The electrical resistivity changed from 10⁶ Ω cm for the non-doped films up to 10² Ω cm for the films prepared with the highest doping concentration.     

The influence of solute distribution on the high nucleation density of Al crystals in amorphous aluminum alloys

An extension of a previous model that describes the role of solute atoms on glass formability leads to the conclusion that solute distribution plays an important role in the formation and stability of amorphous metals. A random distribution of solutes is shown to produce local solute-depleted regions (on the size scale of the mean inter-solute spacing) that provide preferred sites for the formation of crystalline nuclei. The possibility that these solute-depleted regions are responsible for the exceptionally high number density of critical Al nuclei is explored for three Al-Y binary alloys using a computer simulation. Up to 10⁷ Y atoms were placed at random locations in the system, and the number of solute-free regions were counted as a function of the size of these regions. The experimentally observed number density of critical nuclei (∼3 × 10²¹ m⁻³) is reproduced for a critical nucleus about 5 Al atoms in diameter, containing ∼60 Al atoms in an fcc array. Good agreement with previous suggestions of the size of a critical nucleus (about 6 atoms in diameter, containing about 100 atoms) support the conclusion that the current model provides a reasonable physical explanation for the quenched-in features responsible for the exceptionally high nucleation density in some amorphous Al alloys.     

Influence of some foreign metal ions on crystal growth kinetics of brushite (CaHPO4·2H2O)

Brushite, CaHPO₄·2H₂O, has been precipitated at 25 °C in the presence of Mg²⁺, Ba²⁺ or Cu²⁺ at concentrations up to 0.5 mM. When initial pH is sufficiently low to exclude nanocrystalline apatite as the initial solid phase, overall crystal growth rate may be determined from simple mass crystallization by recording pH as function of time. A combination of surface nucleation (birth-and-spread) and spiral (BCF) growth was found. Edge free energy was determined from the former contribution and was found to be a linear function of chemical potential of the additive, indicating constant adsorption over a wide range of additive concentrations. Average distances between adsorbed additive ions as calculated from slopes of plots are compatible with lattice parameters of brushite: 0.54 nm for Mg²⁺, 0.43 nm for Ba²⁺ and 0.86 nm for Cu²⁺. With the latter a sharp decrease in growth rate occurred early in the crystallization process, followed by an equally sharp increase to the previous level. When interpreted in terms of the Cabrera–Vermilyea theory of crystal growth inhibition, the results are consistent with an average distance between Cu ions of 0.88 nm, in perfect agreement with the above value.     

Crystal growth of Co46Ni27Ga27 ferromagnetic shape memory alloys with large single-variant set

The present work proposes a directional solidification method based on liquid melt cooling (LMC) technique to prepare large grain with single-variant set in Co–Ni–Ga alloys. The competitive growth from equaixed grains to steady columnar crystals with 1 1 0 orientation along the axis was observed. The directionally solidified rod has a uniform chemical composition. It can be also found that the unidirectional lamellar martensitic variants were well aligned in a whole grain, forming a single-variant state. Furthermore, the needle-like Ni₃Ga-type γ′ precipitates were formed in alloy with lower growth velocity, and it exhibited the complicated microstructural evolution. At the lowermost part of rod-like crystal, a large number of precipitates were dispersed both in grain interiors and at boundaries but its amount decreased when the columnar crystals were formed and gradually increased again from bottom up to top in the whole rod.     

Structural,electrical and optical properties of SnO2 films deposited on Y-stabilized ZrO2 (1 0 0) substrates by MOCVD

SnO₂ films have been deposited on Y-stabilized ZrO₂ (YSZ) (1 0 0) substrates at different substrate temperatures (500–800 °C) by metalorganic chemical vapor deposition (MOCVD). Structural, electrical and optical properties of the films have been investigated. The films deposited at 500 and 600 °C are epitaxial SnO₂ films with orthorhombic columbite structure, and the HRTEM analysis shows a clear epitaxial relationship of columbite SnO₂(1 0 0)||YSZ(1 0 0). The films deposited at 700 and 800 °C have mixed-phase structures of rutile and columbite SnO₂. The carrier concentration of the films is in the range from 1.15×10¹⁹ to 2.68×10¹⁹ cm⁻³, and the resistivity is from 2.48×10⁻² to 1.16×10⁻² Ω cm. The absolute average transmittance of the films in the visible range exceeds 90%. The band gap of the obtained SnO₂ films is about 3.75–3.87 eV.     

Transmission electron microscopy study of defects in AlN crystals with rough and smooth surface grains

Defects present in (0 0 0 1) textured polycrystalline AlN grown by the sublimation–recombination method were analyzed using transmission electron microscopy (TEM) methods. Grains in the polycrystalline boule had either a smooth or a rough surface. The rough surface grains had mainly edge dislocations, whereas the smooth surface grains had some sub-grain boundaries and were mostly free of dislocations. Dislocations at the grain boundaries were pinned and could not be annihilated.     

Impact of the gas flow ratio on the physical properties of GaN grown by vertical flow metalorganic chemical vapour deposition

We studied the effect of gas flow ratio of the H₂ carrier gas to the NH₃ precursor on the physical and crystal properties of GaN. GaN was grown by vertical reactor metalorganic chemical vapour deposition (MOCVD) on a low-temperature-deposited GaN buffer layer. A (0 0 0 1) sapphire substrate was used. The impact of the gas flow ratio as it was varied from 0.25 to 1 was investigated and discussed. With increase in flow ratio, the concentrations of magnesium and carbon impurities in GaN increased. The flow ratio of 0.5 is the optimum value to minimise the background electron concentration and to maintain crystal quality. The decrease in the background electron concentration is due to the compensation mechanism of acceptor-like magnesium and carbon impurities.     

Investigation of nonpolar (1 1 2¯ 0) a-plane ZnO films grown under various Zn/O ratios by plasma-assisted molecular beam epitaxy

Structural and optical properties of nonpolar a-plane ZnO films grown with different II/VI ratios on r-plane sapphire substrates by plasma-assisted molecular beam epitaxy were investigated. Even by increasing the II/VI ratio across the stoichiometric flux condition a consistent surface morphology of striated stripes along the ZnO 〈0 0 0 1〉 direction without any pit formation was observed, which is contrary to polar c-plane ZnO films. Root mean square surface roughness, full width at half maximum values of X-ray rocking curves, defect densities, and photoluminescence were changed with the II/VI ratio. The sample grown with stoichiometric flux condition showed the lowest value of rms roughness, the smallest threading dislocation and stacking fault densities of ∼4.7×10⁸ cm⁻² and ∼9.5×10⁴ cm⁻¹, respectively, and the highest intensity of D^oX peak. These results imply that the stoichiometric flux growth condition is suitable to obtain superior structural and optical properties compared to other flux conditions.