Influence of some foreign metal ions on crystal growth kinetics of brushite (CaHPO4·2H2O)

Brushite, CaHPO₄·2H₂O, has been precipitated at 25 °C in the presence of Mg²⁺, Ba²⁺ or Cu²⁺ at concentrations up to 0.5 mM. When initial pH is sufficiently low to exclude nanocrystalline apatite as the initial solid phase, overall crystal growth rate may be determined from simple mass crystallization by recording pH as function of time. A combination of surface nucleation (birth-and-spread) and spiral (BCF) growth was found. Edge free energy was determined from the former contribution and was found to be a linear function of chemical potential of the additive, indicating constant adsorption over a wide range of additive concentrations. Average distances between adsorbed additive ions as calculated from slopes of plots are compatible with lattice parameters of brushite: 0.54 nm for Mg²⁺, 0.43 nm for Ba²⁺ and 0.86 nm for Cu²⁺. With the latter a sharp decrease in growth rate occurred early in the crystallization process, followed by an equally sharp increase to the previous level. When interpreted in terms of the Cabrera–Vermilyea theory of crystal growth inhibition, the results are consistent with an average distance between Cu ions of 0.88 nm, in perfect agreement with the above value.     

Thermogravimetric analysis and microstructural observations on the formation of GaN from the reaction between Ga2O3 and NH3

Thermogravimetric analysis (TGA) and microstructural observations were carried to investigate the nitridation mechanism of β-Ga₂O₃ powder to GaN under an NH₃/Ar atmosphere. Non-isothermal TGA showed that nitridation of β-Ga₂O₃ starts at ∼650 °C, followed by decomposition of GaN at ∼1100 °C. Isothermal TGA showed that nitridation follows linear kinetics in the temperature range 800–1000 °C. At an early stage of nitridation, small GaN particles (∼5 nm) are deposited on the β-Ga₂O₃ crystal surface and they increase with time. We proposed a mechanism for the nitridation of Ga₂O₃ by NH₃ whereby nitridation of β-Ga₂O₃ proceeds via the intermediate vapor species Ga₂O(g).     

Growth and microstructural features of laser ablated LiCoO2 thin films

Thin films of LiCoO₂ were prepared by pulsed laser deposition technique and the properties were studied in relation to the deposition parameters. The films deposited from a sintered composite target (LiCoO₂+Li₂O) in an oxygen partial pressure of 100 mTorr and at a substrate temperature of 300 °C exhibited preferred c-axis (0 0 3) orientation perpendicular to the substrate surface. The AFM data demonstrated that the films are composed of uniform distribution of fine grains with an average grain size of 80 nm. The grain size increased with an increase in substrate temperature. The (0 0 3) orientation decreased with increase in (1 0 4) orientation for the films deposited at higher substrate temperatures (>500 °C) indicating that the films’ growth is parallel to the substrate surface. The composition of the experimental films was analyzed using X-ray photoelectron spectroscopy (XPS). The binding energy peaks of Co(2p_3/2) and Co(2p_1/2) are, respectively, observed at 779.3 and 794.4 eV, which can be attributed to the Co³⁺ bonding state of LiCoO₂. The electrochemical measurements were carried out on Li//LiCoO₂ cells with a lithium metal foil as anode and LiCoO₂ film as cathode of 1.5 cm² active area using a Teflon home-made cell hardware. The Li//LiCoO₂ cells were tested in the potential range 2.6-4.2 V. Specific capacity as high as 205 mC/cm² μm was measured for the film grown at 700 °C. The growth of LiCoO₂ films were studied in relation to the deposition parameters for their effective utilization as cathode materials in solid-state microbattery application.     

Growth kinetics of vanadium pentoxide nanostructures under hydrothermal conditions

The work reported here involved a study of the growth kinetics of V₂O₅nH₂O nanostructures under hydrothermal conditions. The coarsening process of V₂O₅nH₂O nanoribbons was followed by subjecting the as-prepared suspensions to hydrothermal treatments at 80 °C for periods ranging from 0 to 7200 min. X-ray diffraction (XRD) confirms that the hydrothermal treatments at 80 °C caused no significant modification of the long-range order structure of samples subjected to different periods of hydrothermal treatment. Field emission scanning transmission electron microscope (FE-STEM) was used to analyze the morphology and width distribution of the nanostructures. The results indicated that the crystal growth mechanism in the [1 0 0] direction of vanadium pentoxide 1D nanostructure under hydrothermal conditions is well described by the oriented attachment (OA) mechanism. This evidence was supported by HRTEM images showing the existence of defects at the interface between nanostructures, which is characteristic of the oriented attachment (OA) mechanism.     

Template free-solvothermaly synthesized copper selenide (CuSe,Cu2−xSe, β-Cu2Se and Cu2Se) hexagonal nanoplates from different precursors at low temperature

Nonstoichiometric (Cu_2−xSe) and stoichiometric (CuSe, β-Cu₂Se and Cu₂Se) copper selenide hexagonal nanoplates have been synthesized using different general and convenient copper sources, e.g. copper chloride, copper sulphate, copper nitrate, copper acetate, elemental copper with elemental selenium, friendly ethylene glycol and hydrazine hydrate in a defined amount of water at 100 °C within 12 h adopting the solvothermal method. Phase analysis, purity and morphology of the product have been well studied by X-ray diffraction (XRD), field emission scanning electron microscopy (FESEM), transmission electron microscopy (TEM), high resolution transmission electron microscopy (HRTEM) and energy dispersive X-ray diffraction (EDAX) techniques. The structural and compositional analysis revealed that the products were of pure phase with corresponding atomic ratios. SEM, TEM and HRTEM analyses revealed that the nanoplates were in the range 200–450 nm and the as-prepared products were uniform and highly crystallized. The nanoplates consisted of {0 0 1} facets of top–bottom surfaces and {1 1 0} facets of the other six side surfaces. This new approach encompasses many advantages over the conventional solvothermal method in terms of product quality (better morphology control with high yield) and reaction conditions (lower temperatures). Copper selenide hexagonal nanoplates obtained by the described method could be potential building blocks to construct functional devices and solar cell. This work may open up a new rationale on designing the solution synthesis of nanostructures for materials possessing similar intrinsic crystal symmetry. On the basis of the carefully controlled experiments mentioned herein, a plausible formation mechanism of the hexagonal nanoplates was suggested and discussed. To the best of our knowledge, this is the first report on nonstoichiometric (Cu_2−xSe) as well as stoichiometric (CuSe, β-Cu₂Se and Cu₂Se) copper selenide hexagonal nanoplates with such full control of morphologies and phases by this method under mild conditions.     

Microwave-assisted synthesis of spheroidal vaterite CaCO3 in ethylene glycol–water mixed solvents without surfactants

Spheroidal vaterite CaCO₃ composed of irregular nanoparticals have been synthesized by a fast microwave-assisted method. The structures are fabricated by the reaction of Ca(CH₃COO)₂ with (NH₄)₂CO₃ at 90 °C in ethylene glycol–water mixed solvents without any surfactants. The diameters of the spheroidal vaterite CaCO₃ range from 1 to 2 μm, and the average size of the nanoparticals is about 70 nm. Bundle-shaped aragonite and rhombohedral calcite are also obtained by adjusting the experimental parameters. Our experiments show that the ratio of ethylene glycol to water, microwave power, reaction time, and two sources of ammonium ions and acetate anions are key parameters for the fabrication of spheroidal vaterite CaCO₃. A possible growth mechanism for the spheroidal structures has been proposed, which suggests that the spheroidal vaterite CaCO₃ is formed by an aggregation mechanism.     

Scale-up synthesis of zinc borate from the reaction of zinc oxide and boric acid in aqueous medium

Synthesis of zinc borate was conducted in a laboratory and a pilot scale batch reactor to see the influence of process variables on the reaction parameters and the final product, 2ZnO·3B₂O₃·3.5H₂O. Effects of stirring speed, presence of baffles, amount of seed, particle size and purity of zinc oxide, and mole ratio of H₃BO₃:ZnO on the zinc borate formation reaction were examined at a constant temperature of 85 °C in a laboratory (4 L) and a pilot scale (85 L) reactor. Products obtained from the reaction in both reactors were characterized by chemical analysis, X-ray diffraction, particle size distribution analysis, thermal gravimetric analysis and scanning electron microscopy. The kinetic data for the zinc borate production reaction was fit by using the logistic model. The results revealed that the specific reaction rate, a model parameter, decreases with increase in particle size of zinc oxide and the presence of baffles, but increases with increase in stirring speed and purity of zinc oxide; however, it is unaffected with the changes in the amount of seed and reactants ratio. The reaction completion time is unaffected by scaling-up.     

Synthesis,morphology and phase transition of the zinc molybdates ZnMoO4·0.8H2O/α-ZnMoO4/ZnMoO4 by hydrothermal method

ZnMoO₄ with a rhombus sheet or flower-like structure, α-ZnMoO₄ and needle-like ZnMoO₄·0.8 H₂O were successfully synthesized by simple hydrothermal crystallization processes with citric acid. ZnMoO₄·0.8 H₂O was easily synthesized in a shorter reaction time (2 h) at a higher reactant concentration. It gradually transformed into ZnMoO₄ with a monoclinic wolframite tungstate structure with an increased reaction time, and pure ZnMoO₄ was obtained with a longer reaction time (8 h). Citric acid (CA) played an important role in controlling the morphology of the as-obtained molybdates. The α-ZnMoO₄ and ZnMoO₄ were synthesized by heating ZnMoO₄·0.8 H₂O at 130 °C for 4 h and 8 h, respectively, under hydrothermal conditions. With transforming of ZnMoO₄·0.8 H₂O to α-ZnMoO₄ and further to ZnMoO₄, the needle-like crystals gradually disappeared and were transformed into crystals with rhombus sheet morphology and then further to pentacle or flower-like crystals that can be ascribed to continuous splitting and growing of the rhombus sheets.     

Flux growth and characterizations of NdPO4 single crystals

Neodymium phosphate single crystals, NdPO₄, have been grown by a flux growth method using Li₂CO₃-2MoO₃ as a flux. The as-grown crystals were characterized by X-ray powder diffraction(XRPD), differential thermal analysis (DTA) and thermogravimetric analysis (TG) techniques. The results show that the as-grown crystals were well crystallized. The crystal was stable over the temperature range from 26 to 1200 °C in N₂. The specific heat of NdPO₄ crystal at room temperature was 0.41 J/g °C. The absorption and the fluorescence spectra of NdPO₄ crystal were also measured at room temperature.     

Structural,electrical and optical properties of SnO2 films deposited on Y-stabilized ZrO2 (1 0 0) substrates by MOCVD

SnO₂ films have been deposited on Y-stabilized ZrO₂ (YSZ) (1 0 0) substrates at different substrate temperatures (500–800 °C) by metalorganic chemical vapor deposition (MOCVD). Structural, electrical and optical properties of the films have been investigated. The films deposited at 500 and 600 °C are epitaxial SnO₂ films with orthorhombic columbite structure, and the HRTEM analysis shows a clear epitaxial relationship of columbite SnO₂(1 0 0)||YSZ(1 0 0). The films deposited at 700 and 800 °C have mixed-phase structures of rutile and columbite SnO₂. The carrier concentration of the films is in the range from 1.15×10¹⁹ to 2.68×10¹⁹ cm⁻³, and the resistivity is from 2.48×10⁻² to 1.16×10⁻² Ω cm. The absolute average transmittance of the films in the visible range exceeds 90%. The band gap of the obtained SnO₂ films is about 3.75–3.87 eV.     

Czochralski-growth of germanium crystals containing high concentrations of oxygen impurities

Oxygen-containing germanium (Ge) single crystals with low density of grown-in dislocations were grown by the Czochralski (CZ) technique from a Ge melt, both with and without a covering by boron oxide (B₂O₃) liquid. Interstitially dissolved oxygen concentrations in the crystals were determined by the absorption peak at 855 cm⁻¹ in the infrared absorption spectra at room temperature. It was found that oxygen concentration in a Ge crystal grown from melt partially or fully covered with B₂O₃ liquid was about 10¹⁶ cm⁻³ and was almost the same as that in a Ge crystal grown without B₂O₃. Oxygen concentration in a Ge crystal was enhanced to be greater than 10¹⁷ cm⁻³ by growing a crystal from a melt fully covered with B₂O₃; with the addition of germanium oxide powder, the maximum oxygen concentration achieved was 5.5×10¹⁷ cm⁻³. The effective segregation coefficients of oxygen in the present Ge crystal growth were roughly estimated to be between 1.0 and 1.4.     

Structure and growth morphology of Gd2O3-doped CeO2 thin films

Gd₂O₃-doped CeO₂ (Gd_0.1Ce_0.9O_1.95, GDC) thin films were synthesized on (1 0 0) Si single crystal substrates by a reactive radio frequency magnetron sputtering technique. Structures and surface morphologies were characterized by X-ray diffraction (XRD), Atomic Force Microscopy (AFM) and one-dimensional power spectral density (1DPSD) analysis. The XRD patterns indicated that, in the temperature range of 200–700 °C, f.c.c. structured GDC thin films were formed with growth orientations varying with temperature—random growth at 200 °C, (2 2 0) textures at 300–600 °C and (1 1 1) texture at 700 °C. GDC film synthesized at 200 °C had the smoothest surface with roughness of R_rms=0.973 nm. Its 1DPSD plot was characterized with a constant part at the low frequencies and a part at the high frequencies that could be fitted by the f^−2.4 power law decay. Such surface feature and scaling behavior were probably caused by the high deposition rate and random growth in the GDC film at this temperature. At higher temperatures (300–700 °C), however, an intermediate frequency slope (−γ₂≈−2) appeared in the 1DPSD plots between the low frequency constant part and the high frequency part fitted by f⁻⁴ power law decay, which indicated a roughing mechanism dominated by crystallographic orientation growth that caused much rougher surfaces in GDC films (R_rms>4 nm).     

Sublimation crystal growth of yttrium nitride

The sublimation–recombination crystal growth of bulk yttrium nitride crystals is reported. The YN source material was prepared by reacting yttrium metal with nitrogen at 1200 °C and 800 Torr total pressure. Crystals were produced by subliming this YN from the source zone, and recondensing it from the vapor as crystals at a lower temperature (by 50 °C). Crystals were grown from 2000 to 2100 °C and with a nitrogen pressure from 125 to 960 Torr. The highest rate was 9.64×10⁻⁵ mol/h (9.92 mg/h). The YN sublimation rate activation energy was 467.1±21.7 kJ/mol. Individual crystals up to 200 μm in dimension were prepared. X-ray diffraction confirmed that the crystals were rock salt YN, with a lattice constant of 4.88 Å. The YN crystals were unstable in air; they spontaneously converted to yttria (Y₂O₃) in 2–4 h. A small fraction of cubic yttria was detected in the XRD of a sample exposed to air for a limited time, while non-cubic yttria was detected in the Raman spectra for a sample exposed to air for more than 1 h.     

A catalyst-free method to silicon nanowires at relative low temperature

Well-crystallized straight Si nanowires (SiNWs) were successfully prepared in large scale via a facile reaction between NaN₃ and Na₂SiF₆ at 600 °C without using any catalyst. Characterization by X-ray powder diffraction and transmission electron microscopy demonstrates that the as-obtained product is pure-phase cubic SiNWs with diameters of 40 nm or so, and lengths of several micrometers. And the SiNWs with spherical tips can be obtained at a temperature as low as 300 °C. Heating temperature and holding time have crucial influence on the synthesis and morphology of the SiNWs. An oxide-assisted growth mechanism is responsible for the formation of the SiNWs.     

Heteroepitaxial growth of Cu2O thin film on ZnO by metal organic chemical vapor deposition

Cuprous oxide (Cu₂O) thin films were grown epitaxially on c-axis-oriented polycrystalline zinc oxide (ZnO) thin films by low-pressure metal organic chemical vapor deposition (MOCVD) from Copper(II) hexafluoroacetylacetonate [Cu(C₅HF₆O₂)₂] at various substrate temperatures, between 250 and 400 °C, and pressures, between 0.6 and 2.1 Torr. Polycrystalline thin films of Cu₂O grow as single phase with [1 1 0] axis aligned perpendicular to the ZnO surface and with in-plane rotational alignment due to (2 2 0)_Cu2O(0 0 0 2)_ZnO; [0 0 1]_Cu2O[1 2¯ 1 0]_ZnO epitaxy. The resulting interface is rectifying and may be suitable for oxide-based p–n junction solar cells or diodes.     

Investigation of void formation beneath thin AlN layers by decomposition of sapphire substrates for self-separation of thick AlN layers grown by HVPE

Void formation at the interface between thick AlN layers and (0 0 0 1) sapphire substrates was investigated to form a predefined separation point of the thick AlN layers for the preparation of freestanding AlN substrates by hydride vapor phase epitaxy (HVPE). By heating 50–200 nm thick intermediate AlN layers above 1400 °C in a gas flow containing H₂ and NH₃, voids were formed beneath the AlN layers by the decomposition reaction of sapphire with hydrogen diffusing to the interface. The volume of the sapphire decomposed at the interface increased as the temperature and time of the heat treatment was increased and as the thickness of the AlN layer decreased. Thick AlN layers subsequently grown at 1450 °C after the formation of voids beneath the intermediate AlN layer with a thickness of 100 nm or above self-separated from the sapphire substrates during post-growth cooling with the aid of voids. The 79 μm thick freestanding AlN substrate obtained using a 200 nm thick intermediate AlN layer had a flat surface with no pits, high optical transparency at wavelengths above 208.1 nm, and a dislocation density of 1.5×10⁸ cm⁻².     

Hydrothermal crystal growth of fresnoite

The growth of fresnoite, Ba₂TiSi₂O₈, by hydrothermal synthesis has led to spontaneous generation of large, (4-5 mm) optically clear crystals from 6 M KF mineralizer solutions. Growth was achieved at relatively low synthesis temperatures (575 °C) comparative to fresnoite synthesis by Czochralski or flux methods. Bulk crystal growth possibilities were explored by transport reactions performed in both fluoride and hydroxide mineralizers with 25-45 °C temperature gradients. Growth rates of 0.14×0.19×0.22 mm³/week were established in 6 M KOH, which is significantly slower than standard hydrothermal rates of 1 mm/week. Although relatively slow, the hydrothermal method has been demonstrated as a synthesis route to high quality single crystals of fresnoite.     

Crystal growth of KInO2 from a hydroxide flux

Single crystals of KInO₂ were obtained from a reactive potassium hydroxide flux at 700 °C. KInO₂ crystallizes in the R-3m crystal system with a=3.2998(10) Å, c=18.322(10) Å and V=172.78(12) Å³. The crystal structure is isotypic with that of α-NaFeO₂ and consists of the (1 1 1) layers being occupied alternately by KO₆ and InO₆ octahedra. Three different AInO₂ structure types are discussed.     

Hydride-assisted growth of GaN nanowires on Au/Si(0 0 1) via the reaction of Ga with NH3 and H2

High quality, straight GaN nanowires (NWs) with diameters of 50 nm and lengths up to 3 μm have been grown on Si(0 0 1) using Au as a catalyst and the direct reaction of Ga with NH₃ and N₂:H₂ at 900 °C. These exhibited intense, near band edge photoluminescence at 3.42 eV in comparison to GaN NWs with non-uniform diameters obtained under a flow of Ar:NH₃, which showed much weaker band edge emission due to strong non-radiative recombination. A significantly higher yield of β-Ga₂O₃ NWs with diameters of ≤50 nm and lengths up to 10 μm were obtained, however, via the reaction of Ga with residual O₂ under a flow of Ar alone. The growth of GaN NWs depends critically on the temperature, pressure and flows in decreasing order of importance but also the availability of reactive species of Ga and N. A growth mechanism is proposed whereby H₂ dissociates on the Au nanoparticles and reacts with Ga giving Ga_xH_y thereby promoting one-dimensional (1D) growth via its reaction with dissociated NH₃ near or at the top of the GaN NWs while suppressing at the same time the formation of an underlying amorphous layer. The higher yield and longer β-Ga₂O₃ NWs grow by the vapor liquid solid mechanism that occurs much more efficiently than nitridation.     

Effect of Al additive on the formation of cubic boron nitride in Li3N–hBN system under HPHT

We have investigated the effect of Al on cBN formation in Li₃N–hBN system at 5.0 GPa and 1300–1650 °C. Regular cBN single crystals of 0.2–0.5 mm in size were obtained. It appears that the presence of Al in hBN powder facilitates the formation of cBN crystals with regular shape, although it does not have any catalytic action for hBN–cBN phase transformation. With increasing Al concentration, the color of cBN changed darker from amber to black and the threshold temperature for cBN formation became higher. X-ray diffraction and Raman spectroscopy indicate that AlN formed by reaction of Li₃N and Al and some B liberated in system.