Growth kinetics of vanadium pentoxide nanostructures under hydrothermal conditions

The work reported here involved a study of the growth kinetics of V₂O₅nH₂O nanostructures under hydrothermal conditions. The coarsening process of V₂O₅nH₂O nanoribbons was followed by subjecting the as-prepared suspensions to hydrothermal treatments at 80 °C for periods ranging from 0 to 7200 min. X-ray diffraction (XRD) confirms that the hydrothermal treatments at 80 °C caused no significant modification of the long-range order structure of samples subjected to different periods of hydrothermal treatment. Field emission scanning transmission electron microscope (FE-STEM) was used to analyze the morphology and width distribution of the nanostructures. The results indicated that the crystal growth mechanism in the [1 0 0] direction of vanadium pentoxide 1D nanostructure under hydrothermal conditions is well described by the oriented attachment (OA) mechanism. This evidence was supported by HRTEM images showing the existence of defects at the interface between nanostructures, which is characteristic of the oriented attachment (OA) mechanism.     

Self-assembly of LiFePO4 nanodendrites in a novel system of ethylene glycol–water

In this work, a novel system of ethylene glycol/water (EG/W) was employed to synthesize LiFePO₄, in which dodecyl benzene sulphonic acid sodium (SDBS) was used as soft template to control particle morphology. The samples were characterized by X-ray diffractometer (XRD), field emission scanning electron microscopy (FE-SEM), high resolution transmission electron microscopy (HRTEM), selected area electron diffraction (SAED) and energy dispersive X-ray spectroscopy (EDX). The LiFePO₄ sample obtained by the reported method displays interesting hierarchical nanostructure (i.e. nanodendrites), which was constructed by nanorods of 3–5 μm in length and ∼50 nm in diameter. The EG/W ratio, amount of SDBS added, hydrothermal temperature and duration played important roles in the assembly of the hierarchical nanostructures. A formation mechanism was proposed and experimentally verified. It is concluded that the nanodendrites were formed due to the end-to-end self-assembly of nanorods. Compared to previously reported methods, the reported approach shows obvious advantages of one-step synthesis, environmental friendliness and low cost, to name a few. The nanodendrites as a cathode material have a higher capacity, compared with the other samples.     

Controlling metal–insulator transition in the hetero-epitaxial VO2/TiO2 bilayer grown on Al2O3

Hetero-epitaxial VO₂/TiO₂ bilayers were synthesized on Al₂O₃ substrates by using pulsed laser deposition, and their physical properties with the changes of oxygen pressure and the substrate orientation were investigated. A metal–insulator transition of the VO₂ was observed only in a narrow oxygen pressure range of 5–20 mTorr. As the oxygen pressure increased, X-ray diffraction peak for the (2 0 0)VO₂ shifted to a lower 2θ position, while the metal–insulator transition temperature (T_MI) decreased by ∼7 K. On the other hand, T_MI was largely varied with substrate orientation. The (2 0 0)VO₂/TiO₂ on the c-plane sapphire showed the highest T_MI of about 350 K, while the (0 0 2)VO₂/TiO₂ on the m-plane sapphire displayed the lowest T_MI of about 310 K. The (1 0 1)VO₂/TiO₂ on the r-plane and the a-plane exhibited T_MI∼340 and 330 K, respectively. The observed variations of T_MI with the oxygen pressure and substrate orientation were presumably due to the change in oxygen content of the VO₂ layer and/or in lattice strain.     

In-situ visualization of a super-accelerated synthesis of zinc oxide nanostructures through CO2 laser heating

A simple growth technique capable of growing a variety of zinc oxide (ZnO) nanostructures with record growth rates of 25 μm/s is demonstrated. Visible lengths of ZnO nanowires, nanotubes, comb-like and pencil-like nanostructures could be grown by employing a focused CO₂ laser-assisted heating of a sintered ZnO rod in ambient air, in few seconds. For the first time, the growth process of nanowires was videographed, in-situ, on an optical microscope. It showed that ZnO was evaporated and presumably decomposed into Zn and oxygen by laser heating, reforming ZnO nanostructures at places with suitable growth temperatures. Analysis on the representative nanowires shows a rectangular cross-section, with a [0 0 0 1] growth direction. With CO₂ laser heating replacing furnace heating used conventionally, and using different reactants and forming gases, this method could be easily adopted for other semiconducting inorganic nanostructures in addition to ZnO.     

Structure evolution of Zn cluster on Si (0 0 1) substrate for ZnO nanostructure growth

In this paper, Monte Carlo simulations are carried out for Zn cluster supported on a static Si (0 0 1) substrate to estimate the morphological evolution of self-catalysis growth of ZnO nanostructures. The tight-binding many-body potential and the Lennard–Jones potential are used to describe Zn–Zn and Zn–Si interactions, respectively. The dynamic processes of Zn cluster in the temperature field decomposing and wetting effects are visualized through the simulation. The Zn atomic aggregates that randomly disperse on the Si (0 0 1) substrate with different shapes, such as a dimer, trimer, multimer and atomic chain, would act as catalytic nucleation sites for the following growth of the ZnO nanostructure. This phenomenon provides a sound explanation for the formation of randomly orientated and diversified ZnO nanostructures on the Si (0 0 1) substrate.     

Growth and microstructural features of laser ablated LiCoO2 thin films

Thin films of LiCoO₂ were prepared by pulsed laser deposition technique and the properties were studied in relation to the deposition parameters. The films deposited from a sintered composite target (LiCoO₂+Li₂O) in an oxygen partial pressure of 100 mTorr and at a substrate temperature of 300 °C exhibited preferred c-axis (0 0 3) orientation perpendicular to the substrate surface. The AFM data demonstrated that the films are composed of uniform distribution of fine grains with an average grain size of 80 nm. The grain size increased with an increase in substrate temperature. The (0 0 3) orientation decreased with increase in (1 0 4) orientation for the films deposited at higher substrate temperatures (>500 °C) indicating that the films’ growth is parallel to the substrate surface. The composition of the experimental films was analyzed using X-ray photoelectron spectroscopy (XPS). The binding energy peaks of Co(2p_3/2) and Co(2p_1/2) are, respectively, observed at 779.3 and 794.4 eV, which can be attributed to the Co³⁺ bonding state of LiCoO₂. The electrochemical measurements were carried out on Li//LiCoO₂ cells with a lithium metal foil as anode and LiCoO₂ film as cathode of 1.5 cm² active area using a Teflon home-made cell hardware. The Li//LiCoO₂ cells were tested in the potential range 2.6-4.2 V. Specific capacity as high as 205 mC/cm² μm was measured for the film grown at 700 °C. The growth of LiCoO₂ films were studied in relation to the deposition parameters for their effective utilization as cathode materials in solid-state microbattery application.     

Growth and properties of Nd:Lu3Ga5O12 laser crystal by floating-zone method

Neodymium (Nd) doped lutetium gallium garnet (Nd:Lu₃Ga₅O₁₂, Nd:LuGG) single crystal was successfully grown by the optical floating-zone method for the first time to our knowledge. Its absorption and luminescence spectra at room temperature were measured. By using the J–O theory, the spectral parameters of Nd:LuGG were calculated, which indicated that Nd:LuGG should possess comparable and even better laser properties than Nd:YAG. The maximum output power of 855 mW at 1062 nm was achieved with slope efficiency of 23.4% under a pump power of 5.2 W, and optical conversion efficiency of 16.4%. All the results show that Nd:LuGG is a potential laser material.     

Investigation of void formation beneath thin AlN layers by decomposition of sapphire substrates for self-separation of thick AlN layers grown by HVPE

Void formation at the interface between thick AlN layers and (0 0 0 1) sapphire substrates was investigated to form a predefined separation point of the thick AlN layers for the preparation of freestanding AlN substrates by hydride vapor phase epitaxy (HVPE). By heating 50–200 nm thick intermediate AlN layers above 1400 °C in a gas flow containing H₂ and NH₃, voids were formed beneath the AlN layers by the decomposition reaction of sapphire with hydrogen diffusing to the interface. The volume of the sapphire decomposed at the interface increased as the temperature and time of the heat treatment was increased and as the thickness of the AlN layer decreased. Thick AlN layers subsequently grown at 1450 °C after the formation of voids beneath the intermediate AlN layer with a thickness of 100 nm or above self-separated from the sapphire substrates during post-growth cooling with the aid of voids. The 79 μm thick freestanding AlN substrate obtained using a 200 nm thick intermediate AlN layer had a flat surface with no pits, high optical transparency at wavelengths above 208.1 nm, and a dislocation density of 1.5×10⁸ cm⁻².     

Microwave-assisted synthesis of spheroidal vaterite CaCO3 in ethylene glycol–water mixed solvents without surfactants

Spheroidal vaterite CaCO₃ composed of irregular nanoparticals have been synthesized by a fast microwave-assisted method. The structures are fabricated by the reaction of Ca(CH₃COO)₂ with (NH₄)₂CO₃ at 90 °C in ethylene glycol–water mixed solvents without any surfactants. The diameters of the spheroidal vaterite CaCO₃ range from 1 to 2 μm, and the average size of the nanoparticals is about 70 nm. Bundle-shaped aragonite and rhombohedral calcite are also obtained by adjusting the experimental parameters. Our experiments show that the ratio of ethylene glycol to water, microwave power, reaction time, and two sources of ammonium ions and acetate anions are key parameters for the fabrication of spheroidal vaterite CaCO₃. A possible growth mechanism for the spheroidal structures has been proposed, which suggests that the spheroidal vaterite CaCO₃ is formed by an aggregation mechanism.     

Fabrication of two-dimensional lattices by using photosensitive sol-gel and four-beam laser interference

This work demonstrates a promising method to fabricate 2D lattices by using photosensitive sol-gel method combining with four-beam of a 350.7 nm Kr ion laser interference. Photosensitive TiO₂ gel films with chelate complexes as precursors are fabricated. The characteristics of UV and IR spectra of the films and their variations in the process of laser irradiation are investigated. The results show that the gel films had an absorption peak at about 358 nm due to the formation of chelate complex. This peak gradually decreases with irradiation in time, which indicates the photosensitive properties of the TiO₂ films. A flexible four-beam interference system is proposed. Given incident angles 20.5° and 44.5°, the lattices with pitch of 700 nm and 326 nm are fabricated, respectively. The diffraction phenomenon of the 700 nm lattices is investigated by inverse method. The results are fully consistent with the 2D crystal diffraction theory.     

Hydrothermal synthesis of organic hybrid BaTiO3 nanoparticles using a supercritical continuous flow reaction system

Barium titanate (BaTiO₃: BT) nanoparticles were synthesized by the hydrothermal method in the presence of dispersants using a continuous supercritical flow reaction system. The reactants of TiO₂ sol/Ba(NO₃)₂ mixed solution and KOH solution were used as starting materials and that was heated quickly up to 400 °C under the pressure of 30 MPa for 8 ms as reaction time. The dispersant solution such as polyacrylic acid (PAA) and polyoxyethylene(20) sorbitan monooleate (Tween 80) was injected in the cooling process after the reaction. The crystal phase of the obtained particles was identified as perovskite cubic BaTiO₃ by X-ray diffractometry (XRD) and Raman spectroscopy. Raman spectra and thermogravimetric data revealed that PAA and Tween 80 fabricated hybrid BT nanoparicles. Primarily particle size of the BaTiO₃ nanoparticle was determined by means of BET surface area, as small as less than 10 nm irrespective of dispersants. In contrast, dispersed particle size in solution measured by dynamic light scattering (DLS) technique decreased from 282 nm to less than 100 nm depending on the dispersant. Aggregation of BaTiO₃ nanoparticles might be depressed in the presence of dispersants, especially PAA is the most effective among the dispersants examined.     

Submicron rectangular hollow tube crystals of rutile-type GeO2

Single crystals of rutile-type GeO₂ having a structure equivalent to that of TiO₂, a well-known photocatalyst, have been grown for the first time in supercritical oxygen at approximately 5 GPa and 3000 K. The obtained crystals exhibit a rectangular hollow tube structure with submicron size (cross section with sides of ∼500 nm, wall thickness of ∼20 nm, and longitudinal length of ∼5 μm). These single crystals were grown within 1 s and along the c-axis surrounded by the (1 1 0) faces. The crystal growth mechanism strongly depends on the growth mechanism of rutile-type oxides, and the extremely short growing time is an important factor in the formation of hollow tube crystals.     

Synthesis and optical properties of purified translucent,orthorhombic boron nitride films

Large-area (>1 cm²) freestanding translucent orthorhombic boron nitride (oBN) films have been synthesized by magnetron sputtering at a low radio-frequency power of 120 W. The structural characterizations were performed by means of X-ray diffraction, Fourier transform infrared spectroscopy, and X-ray photoelectron spectroscopy. It is demonstrated that oBN is a direct band gap semiconductor (E_g∼3.43 eV). Excited by ultraviolet laser (wavelength at 325 nm), the oBN films emit strong white light, which can be seen by the naked eyes in the dark. In the photoluminescence spectrum, besides the ultraviolet near-band-edge radiative recombination emission, there are three visible emission bands (centered at 400, 538, and 700 nm) arising from the defect-related deep-level centers of oBN, which are mixed to form the white light emission. The hardness and elastic modulus of oBN films are 11.5 and 94 GPa, respectively, examined by nanoindentation measurements.     

Synthesis and characterization of visible light responsive N-TiO2 mixed crystal by a modified hydrothermal process

N doped TiO₂ with anatase and rutile mixed crystal were prepared by using tetrabutyl titanate as the precursor via a modified hydrothermal process and calcination at 320 °C. The microstructure and morphology of samples were characterized by XRD, UV-vis-DRS, FTIR and XPS. The results showed that N-TiO₂ particles were crystallized to anatase and rutile mixed crystal structure; they were presented narrow particle size distribution, and the average particle size was ca. 13.5 nm calculated from XRD results. It was found that the N-doped TiO₂ particles showed strong visible-light absorption and high photocatalytic activity for the mineralization of Rhodamine B under irradiation by visible light (400-500 nm). The high visible-light photocatalytic activity of the obtained N-doped TiO₂ might result from the synergetic effect of nitrogen doping and the mixed lattice structure of N-TiO₂. Possible mechanism of N-TiO₂ mixed crystal formed under hydrothermal conditions was discussed.     

Decisive role of Au layer on the oriented growth of ZnO nanorod arrays via a simple aqueous solution method

Vertically aligned arrays of ZnO nanorod were synthesized on the Au/SiO₂/Si(1 0 0) substrate by a simple aqueous solution growth process, without pre-prepared ZnO seed layer. For comparison, glass and SiO₂/Si were also used as substrates, and the results show that the Au layer plays a decisive role in orienting the growth of the ZnO nanorod. The effects of other growth parameters, including Zn²⁺ concentration and growth time, on morphology, density, and orientation of the ZnO nanostructure were also studied and with longer reaction time, a new structure namely ZnO nanotip was obtained. Moreover, the growth mechanism of ZnO nanorod arrays grown on the Au/SiO₂/Si substrate was proposed.     

MOVPE growth of single-crystal hexagonal AlN on cubic diamond

We have obtained single-crystal aluminum nitride (AlN) layers on diamond (1 1 1) substrates by metalorganic vapor-phase epitaxy (MOVPE). When the thermal cleaning temperature of the substrate and growth temperature of the AlN layer were below 1100 °C, the AlN layer had multi-domain structures mainly consisting of rotated domains. An interface layer, consisting of amorphous carbon and poly-crystal AlN, was formed between the AlN layer and the diamond substrate. On the other hand, when the thermal cleaning temperature and growth temperature were above 1200 °C, a single-crystal AlN layer was grown and no interface layer was formed. Therefore, we attribute the multi-domain structures to the interface layer. Even at the growth temperature of 1100 °C, by performing the thermal cleaning at 1200 °C, the single-crystal AlN layer was obtained, indicating that the thermal cleaning temperature of the substrate is a critical factor for the formation of the interface layer. The epitaxial relationship between the single-crystal AlN layer and the diamond (1 1 1) substrate was determined to be [0 0 0 1]_AlN∥[1 1 1]_diamond and [1 0 1¯ 0]_AlN∥[1 1¯ 0]_diamond. The AlN surface had Al polarity and no inversion domains were observed in the AlN layer.     

Preparation,crystal structure,spectrographic characterization,thermal and third order nonlinear optical properties of benzyltriethylamine bis(2-thioxo-1,3-dithiole-4,5-dithiolato)nickel(III)

The preparation and crystal structure of a novel nonlinear optical organometallic crystal, benzyltriethylamine bis(2-thioxo-1,3-dithiole-4,5-dithiolato)nickel(III) (BTEANDT), are described. The crystal was characterized by elemental analyses, infrared and X-ray powder diffraction spectroscopy, thermal analysis and optical absorption. The third order nonlinear optical properties of crystal were investigated by using the Z-scan technique at 1064 nm with 20 ps. A self-focusing effect and a saturable absorption were observed. The nonlinear refraction coefficient (n₂) and the nonlinear absorption coefficient (β) have been found to be 7.311×10⁻¹⁸ m²/W and −6.064×10⁻¹¹ m/W when the on-axis irradiance at focus (I₀) is 3.025 GW/cm². The relationship between β and I₀ was studied, which has revealed that the former is proportional to the latter. The result has been explained with the theory of absorption cross-section.     

A study on structural formation and optical property of wide band-gap Be0.2Zn0.8O layers grown by RF magnetron co-sputtering system

Wide band-gap BeZnO layers were grown on Al₂O₃ (0 0 0 1) substrate using radio-frequency magnetron co-sputtering. The rate of Be_xZn_1−xO crystallized as a hexagonal structure was x=0.2. From the X-ray photoelectron spectroscopy measurement, the O–Zn bonds relating the crystal structure and the Be–O bonds related to the deviation of the stoichiometry in the BeZnO layer were caught at 530.4 and 531.7 eV in the O 1s spectrum, respectively. Thus, the observance on the Be 1s peak of 113.2 eV associated with the bonding Be–O indicates that the sputtered Be atoms are substituted for the host-lattice site in ZnO. This Be–O bonding shows a relatively low intense and broadening spectrum caused by large fluctuation of Be content in the BeZnO layer. From the photoluminescence and transmittance measurement, the free exciton and the neutral donor-bound exciton (D⁰, X) emissions were observed at 3.7692 and 3.7313 eV, respectively, and an average transmittance rate over 95% was achieved in a wide ultraviolet (UV)–visible region. Also, the binding energy for the (D⁰, X) emission was extracted to be 37.9 meV. Through the wide band-gap material BeZnO, we may open some possibilities for fabricating a ZnO-based UV light-emitting diode to be utilized as a barrier layer comprised of the ZnO/BeZnO quantum well structure and/or an UV light emitting material itself.     

Hydride-assisted growth of GaN nanowires on Au/Si(0 0 1) via the reaction of Ga with NH3 and H2

High quality, straight GaN nanowires (NWs) with diameters of 50 nm and lengths up to 3 μm have been grown on Si(0 0 1) using Au as a catalyst and the direct reaction of Ga with NH₃ and N₂:H₂ at 900 °C. These exhibited intense, near band edge photoluminescence at 3.42 eV in comparison to GaN NWs with non-uniform diameters obtained under a flow of Ar:NH₃, which showed much weaker band edge emission due to strong non-radiative recombination. A significantly higher yield of β-Ga₂O₃ NWs with diameters of ≤50 nm and lengths up to 10 μm were obtained, however, via the reaction of Ga with residual O₂ under a flow of Ar alone. The growth of GaN NWs depends critically on the temperature, pressure and flows in decreasing order of importance but also the availability of reactive species of Ga and N. A growth mechanism is proposed whereby H₂ dissociates on the Au nanoparticles and reacts with Ga giving Ga_xH_y thereby promoting one-dimensional (1D) growth via its reaction with dissociated NH₃ near or at the top of the GaN NWs while suppressing at the same time the formation of an underlying amorphous layer. The higher yield and longer β-Ga₂O₃ NWs grow by the vapor liquid solid mechanism that occurs much more efficiently than nitridation.     

Epitaxial growth of tin oxide film on TiO2(1 1 0) using molecular beam epitaxy

Growth of tin oxide thin films using molecular beam epitaxy in a pyrolyzed nitrogen dioxide atmosphere on a titanium dioxide (1 1 0) substrate was investigated using X-ray photoelectron spectroscopy (XPS), electron diffraction, and atomic force microscopy (AFM). Properties of deposited films were studied for their dependence on substrate temperature and oxidation gas pressure. Analyses using XPS data revealed that tin atoms were fully oxidized to Sn⁴⁺ and SnO₂ films were grown epitaxially in deposition conditions of substrate temperatures of 627 K or higher and NO₂ pressure greater than 3×10⁻³ Pa. At a substrate temperature of 773 K, a smooth surface with atomic steps was visible in the SnO₂ films, but above or below this temperature, fine grains with crystal facets or porous structures appeared. At pressures of 8×10⁻⁴ to 3×10⁻⁴ Pa, the randomly oriented SnO phase was dominantly grown. Further decreasing the pressure, the Sn metal phase, which was epitaxially crystallized at less than 500 K, was also grown.