CBrCl3液芯光纤中的受激喇曼散射

以1.06μm调Q-锁模激光泵浦CBrCl_3液芯光纤,观察到11级受激喇曼散射,测量了各级受激喇曼散射的相对峰值功率及第9、10和11级的频谱.这种液芯光纤中的受激喇曼散射可作为获得2μm以上波段红外相干光的手段.     

The effect of the core hole on x-ray emission spectra in simple metals

We show that one-particle calculations of x-ray spectra with and without the core hole can give drastically different results, indicating a breakdown of one-particle theory. Only emission spectra obtained in the absence of the core hole consistently show a close resemblance to experiment. We show, that this fact can be explained by the many-body theory of Nozières and DeDominicis. We are then able to give the first interpretation of the L_2,3 satellite spectrum of sodium.     

Raman scattering in In/InO_x core shell structured nanoparticles

The properties of Raman phonons are very important due to the fact that they can availably reflect some important physical information. An abnormal Raman peak is observed at about 558 cm-1 in In film composed of In/InOx core-shell structured nanoparticles, and the phonon mode stays very stable when the temperature changes. Our results indicate that this Raman scattering is attributed to the existence of incomplete indium oxide in the oxide shell.     

Effects of light localization in photoluminescence and Raman scattering in silicon nanostructures

The effect of light localization in photoluminescence (PL) and Raman scattering (RS) in silicon nanowires with diameter of 100 nm was investigated. The optical excitation was done by CW radiation of a YAG:Nd laser at 1.064 μm. The PL an RS intensities were found to increase strongly for the samples with Si nanowires in comparison with corresponding values of c-Si substrate. The effect is explained by an increase of the lifetime of photons in silicon nanowire structures.     

单脉冲喇曼散射技术测量高压燃烧场组分浓度

介绍了自发喇曼散射技术的基本原理、实验方法及对高压燃烧场的测量结果。利用Nd:YAG激光的三倍频输出激发振动喇曼散射,在单脉冲条件下测量了高压模拟燃烧室内不同化学配比条件下以氢气-空气预混燃烧场为主要组分(N2,O2,H2O,H2等)的喇曼光谱,获得了主要组分浓度随燃烧时间、燃烧场压力的变化规律。实验中利用偏振技术有效地提高了信噪比。通过优化激光光束形状及光路设计避免了等离子体光谱对喇曼信号的干扰。     

High-resolution study of x-ray resonant Raman scattering at the K edge of silicon

We report on the first high-resolution measurements of the K x-ray resonant Raman scattering (RRS) in Si. The measured x-ray RRS spectra, interpreted using the Kramers-Heisenberg approach, revealed spectral features corresponding to electronic excitations to the conduction and valence bands in silicon. The total cross sections for the x-ray RRS at the 1s absorption edge and the 1s-3p excitation were derived. The Kramers-Heisenberg formalism was found to reproduce quite well the x-ray RRS spectra, which is of prime importance for applications of the total-reflection x-ray fluorescence technique.     

Resonant Raman scattering of discrete hole states in self-assembled Si/Ge quantum dots

We report the first resonant electronic Raman spectroscopy study of discrete electronic transitions within small p-doped self-assembled Si/Ge quantum dots (QDs). A heavy hole (hh) to light hole (lh) Raman transition with a dispersionless energy of 105 meV and a resonance energy of the hh states to virtually localised electrons at the direct band gap of 2.5 eV are observed. The hh–lh transition energy shifts to lower values with increasing annealing temperature due to significant intermixing of Si and Ge in the QDs. Structural parameters of the small Si/Ge dots have been determined and introduced into 6-band k·p valence band structure calculations. Both the value of the electronic Raman transition of localised holes as well as the resonance energy at the E₀ gap are in excellent agreement with the calculations.     

The buildup of stimulated Raman scattering from spontaneous Raman scattering

We present a quantum electrodynamic theory which shows for the first time how stimulated Raman scattering builds up, both spatially and temporally, from spontaneous Raman scattering. We analytically solve operator Maxwell-Bloch equations to find the Stokes field operator, and thus the Stokes intensity, for both monochromatic and broad-band (phase diffusion) pump lasers.     

Raman scattering in SnSe

Zone center optical phonons in SnSe were investigated using Raman scattering data obtained here and previously reported far infrared reflectivity measurements. The values of the ratio of the pairs of interlayer force constants were calculated te be between 3·3 and 4·5. Thus it can be concluded that SnS is a layer like semiconductor but less layer like than GeS, GeSe or SnS.     

Raman effect in the x-ray region

This paper presents a brief review of x-ray Raman scattering and some of our calculations on Raman scattered line shapes from light elements. We summarise the history of the Raman process in the x-ray region and present a detailed theory of the Raman scattering from an atomic many-electron system. Actual calculations of the Raman cross-section using this theory in single-particle approximation are given. The process of internal resonance Raman scattering is also discussed in the same formulation. The Raman cross-section is compared with the cross-sections of other x-ray scattering processes.     

Pulse-induced Raman scattering

The kinetic equations are used to show that induced Raman scattering can reduce the pulse height and length, and also can split a single pulse into several short pulses of decreasing energy. General formulas are derived for the pulse characteristics.     

变纤芯直径传能光纤中受激拉曼散射传输特性的理论研究

锥形光纤纤芯直径沿着光纤长度方向均匀增大,在抑制非线性效应方面有着独特的优势。理论对比了单横模高斯光束输入时,输入纤芯直径均为50 μm、纤芯直径沿着光纤长度方向恒定、线性增大和非线性增大的变纤芯直径传能光纤的输出光谱演化和拉曼光特性。在相同条件下,输入功率10 kW时,恒定型传能光纤的输出光谱中,拉曼抑制比（定义为输出光谱中信号光峰值强度分贝值与拉曼光峰值强度分贝值之差）为33.1 dB,线性增大和非线性增大型的输出拉曼抑制比分别为47.0,48.6 dB,分别优于恒定型传能光纤13.9,15.5 dB;输入功率达17.5 kW时,恒定型传能光纤中有81.6%的输入能量被耗散或转移到其他波长,线性增大和非线性增大型仅不到2%,其输出的信号光波段能量占总输入能量的98.1%,98.9%。结果表明,使用线性增大型或非线性增大型传能光纤代替恒定型常规光纤,可以有效提高受激拉曼散射阈值,相关研究可以为大功率光纤合束器和光纤端帽的设计提供有益参考。     

Biocompatible and stable core/shell drug nanocarrier with high surface-enhanced Raman scattering activity

<正>A novel drug carrier based on SiO_2-coated silver nanoparticle aggregates and antitumor drug is successfully synthesized.The surface-enhanced Raman scattering(SERS) spectra of the antitumor drug in living cells are obtained.By using silver nano-aggregates as SERS substrates instead of dispersed silver particles, a great improvement of SERS signal intensity is achieved.It is found that the chemical stability of the drug carrier can also be increased with the existence of SiO_2 shell.The adsorbing effect between antitumor drug 9-aminoacridine(9AA) and silver particles is investigated to optimize the SERS signal. The core/shell structure of the drug carrier is characterized by ultraviolet-visible(UV-Vis) spectroscopy and transmission electron microscopy(TEM) pictures.The experimental results show that the drug carrier offers biocompatibility,stability,and high SERS activity,holding the potential for realizing the intracellular drug tracing.     

Two-phonon Raman scattering in GaAs

The second-order Raman Spectrum of GaAs has been measured at room temperature by using an argon ion laser with Brewster's angle configuration. A number of critical points have been interpreted by considering neutron inelastic scattering work and detailed critical-point analysis in Ge. The Γ₁ component is the strongest in the spectrum where overtone scattering is dominant. Combination scattering has been observed in the energy region between 300 and 350 cm^?1for both Γ₁ and Γ₁₅ components. The second-order Raman spectrum is compared with the two-phonon overtone Raman intensity, calculated from neutron diffraction data. In the low frequency region, the Raman spectrum shows directly the one-phonon density of states of the TA phonon.     

Raman scattering in TTF crystals

Polarized Raman spectra at 2, 80 and 300 K are reported for lattice and intramolecular modes in single crystals of tetrathiofulvalene, the donor molecule of the charge transfer complex TTF—TCNQ. In addition to these Raman features, a low-temperature emmision spectrum with associated sharp line structure is reported.     

High-resolution Raman scattering in oligonucleotides

The high-resolution spectra of short single-stranded oligonucleotides have been measured by the high-sensitivity nonresonant Raman scattering method using the example of the system d(20G, 20T), where G is guanine and T is thymine. The samples under study have been prepared by the chemical synthesis using the solid-phase amidophosphite method on an automatic synthesizer. It has been shown that the spectra observed in the frequency range of 500–1500 cm^?1 can be sufficient for the resolution of spectral components corresponding to vibrations of individual oligonucleotide molecules, which contain a large number of atoms in the unit cell.     

Cooperative effects in Raman scattering

We formulate a theory of Raman scatterings from molecules based on the idea that the molecules within a small portion of the wavelength of the incident light should be considered as a single quantum-mechanical system. In such a system, if the final level involved in the Raman scattering is populated by the stimulated absorption or earlier scattering, the theory predicts that the scattering cross section would be increased approximately by a factor of the number of molecules existing in this final scattering level.     

Chaos in stimulated Raman scattering

Coherent state technique and maximal Lyapunov exponent method are used for the study of deterministic chaos in a system governing stimulated Raman scattering. The influence of the external pumping on dynamics of the system is investigated. Phase portraits and FFT spectra are presented.The author would like to express his sincere thanks to prof. J. Peina for his comments and stimulating discussions.