Magnetic phase transition and the corresponding magnetostriction of intermetallic compounds RMnsGe2（R=Sm,Gd）

The temperature dependence of lattice constants a and c of intermetallic compounds RMn₂Ge₂ (R=Sm, Gd) is measured in the temperature range 10－800K by using the x-ray diffraction method. The magnetoelastic anomalies of lattice constants are found at the different kinds of spontaneous magnetic transitions. The transversal and longitudinal magnetostrictions of polycrystalline samples are measured in the pulse magnetic field up to 25T. In the external magnetic field there occurs a first-order field-induced antiferromagnetism－ferromagnetism transition in the Mn sublattice, which gives rise to a large magnetostriction. The magnitude of magnetostrictions is as large as 10^-3. The transversal and longitudinal magnetostrictions have the same sign and are almost equal. This indicates that the magnetostriction is isotropic and mainly caused by the interlayer Mn－Mn exchange interaction. The experimental results are explained in the framework of a two-sublattice ferrimagnet with the negative exchange interaction in one of the sublattices by taking into account the lattice constant dependence of interlayer Mn－Mn exchange interaction.     

Magnetic properties and magnetoresistance of HfFe2Ge2-type Dy1-xGdxMn6Ge6 (x=0.1－0.6) compounds

The magnetic properties and magnetoresistance effects of Dy_{1-x}Gd_xMn_6Ge_6 (x=0.1－0.6) compounds have been studied by magnetic properties and resistivity measurements in applied magnetic fields up to 5T. The compounds with x=0.1, 0.2, 0.4 and 0.5 order antiferromagnetically at 425, 428, 430 and 432K, respectively, and there are second magnetic phase transitions below 100K. The compound with x=0.6 exhibits a transition from ferrimagnetic to antiferromagnetic, then to ferrimagnetic state again with decreasing temperature. Furthermore, it displays a field-induced metamagnetic transition, and its threshold field decreases with increasing temperature. The magnetoresistance curve of the compound with x=0.6 in applied magnetic fields up to 5T is presented and the magnetoresistance effects are related to the metamagnetic transitions.     

金属间化合物DyMn_2Ge_2的自发磁相变和场诱导的磁相变

在 10— 80 0K的温度范围内用X射线衍射方法测量了DyMn2 Ge2 化合物的晶格常数与温度的变化关系 ,观察到高温时DyMn2 Ge2 由顺磁状态到反铁磁状态的自发磁相变伴随着晶格常数a的负的磁弹性异常现象 .在4 2K— 2 0 0K的温度范围内测量了DyMn2 Ge2 的交流磁化率 .在交换相互作用的分子场模型近似下 ,从理论上分析讨论了DyMn2 Ge2 的低温自发磁相变和场诱导的磁相变 .计算了DyMn2 Ge2 单晶的磁化强度与温度的变化关系以及不同温度下外磁场沿晶轴c方向时的磁化曲线 .理论分析和计算结果表明 ,温度低于 33K时在DyMn2 Ge2 中观察到的场诱导的一级磁相变为由亚铁磁状态 (Fi)到中间态 (IS)相变 .     

The anisotropy of Gd－Fe exchange interaction for Gd2Fe17 and Gd2Fe17H3

The magnetization curves along the crystal axes for Gd_2Fe_{17} and Gd_2Fe_{17}H_3 were analysed based on the single-ion model. If the Gd－Fe exchange interaction has been taken as isotropic as usual, the fitted values of magneto-crystalline anisotropy of the Fe sublattices in Gd_2Fe_{17} and Gd_2Fe_{17}H_3 would become unreasonably different from those of the corresponding Y or Lu compounds. It was shown that the large difference is caused by the neglect of the anisotropy of the Gd－Fe exchange interaction.     

Magnetic properties and magnetocaloric effects of Mn5G3-xGax

We report on the magnetic properties and magnetocaloric effects of Mn_5Ge_{3-x}Ga_x compounds with x=0.1, 0.2, 0.3, 0.4, 0.6 and 0.9. All samples crystallize in the hexagonal Mn_5Si_3-type structure with space group P6_3/mcm and order ferromagnetically. The Curie temperature of these compounds decreases with increasing x, from 306K (x=0.1) to 274K (x=0.9). The average Mn magnetic moments increases with increasing Ga content, reaching a maximum value at x=0.6. The magnetic entropy changes in these compounds are determined from the temperature and field dependence of the magnetization using the thermodynamic Maxwell relation. The Ga substitution has two kinds of influence on the magnetocaloric effect (MCE) of Mn_5Ge_3. One is that the magnitude of the magnetic entropy change decreases, the other is that the MCE peak becomes broadened.     

金属间化合物DyMn2Ge2的自发磁相变和场诱导的磁相变

在10—800K的温度范围内用X射线衍射方法测量了DyMn₂Ge₂化合物的晶格常数与温度的变化关系,观察到高温时DyMn₂Ge₂由顺磁状态到反铁磁状态的自发磁相变伴随着晶格常数a的负的磁弹性异常现象.在4.2K—200K的温度范围内测量了DyMn₂Ge₂的交流磁化率.在交换相互作用的分子场模型近似下,从理论上分析讨论了DyMn₂Ge₂的低温自发磁相变和场诱导的磁相变.计算了DyMn₂Ge₂单晶的磁化强度与温度的变化关系以及不同温度下外磁场沿晶轴c方向时的磁化曲线.理论分析和计算结果表明,温度低于33K时在DyMn₂Ge₂中观察到的场诱导的一级磁相变为由亚铁磁状态(Fi)到中间态(IS)相变. 关键词： 稀土-过渡族金属间化合物 磁结构 磁相变     

Growth of Mn5Ge3 ultrathin film on Ge（111）

The growth of Mn5Ge3 ultrathin films with different thicknesses, prepared by solid phase epitaxy, is studied. The results of scanning tunnelling microscopy and low energy electron diffraction studies show that the film can be formed and it is terminated with a （√3 × √3） R30° surface reconstruction when the thickness of Mn exceeds 3 monolayers. The magnetic properties show that the Curie temperature is about 300 K and the T^2-dependent behaviour is observed to remain up to 220 K.     

Raman spectra and XPS studies of phase changes in Ge2Sb2Te5 films

Ge_2Sb_2Te_5 film was deposited by RF magnetron sputtering on Si (100) substrate. The structure of amorphous and crystalline Ge_2Sb_2Te_5 thin films was investigated using XRD, Raman spectra and XPS. XRD measurements revealed the existence of two different crystalline phases, which has a FCC structure and a hexagonal structure, respectively. The broad peak in the Raman spectra of amorphous Ge_2Sb_2Te_5 film is due to the amorphous －Te－-Te－ stretching. As the annealing temperature increases, the broad peak separates into two peaks, which indicates that the heteropolar bond in GeTe_4 and the Sb－Sb bond are connected with four Te atoms, and other units such as (TeSb) Sb－Sb (Te_2) and (Sb_2) Sb－Sb (Te_2), where some of the four Te atoms in the above formula are replaced by Sb atoms, remain in crystalline Ge_2Sb_2Te_5 thin film. And from the results of Raman spectra and XPS, higher the annealing temperature, more Te atoms bond to Ge atoms and more Sb atoms substitute Te in (Te_2) Sb－Sb (Te_2).     

Gd2Co2Al电子结构和磁性的第一性原理研究

从第一性原理出发，在局域自旋密度近似(LSDA)和LSDA+U(在位库仑能)近似下，采用FPLAPW密度泛函能带计算方法研究了Gd₂Co₂Al的电子结构和磁性. 从平均场近似出发，估算了体系的居里温度，并分析了导致体系居里温度偏低的原因.研究结果显示Gd₂Co₂Al为金属导体，其强的铁磁性的提供者主要是Gd，且Co的局域铁磁性是不稳定的. 基于LSDA近似的计算表明Gd₂Co₂关键词： 稀土过渡族金属间化合物 密度泛函理论 电子结构 磁性性质     

Magnetism and magnetoresistance of Er1-xSmxMn6Ge6(x=0.2－1.0) compounds

Magnetic and transport properties of Er_{1-x}Sm_xMn_6Ge_6(x=0.2-1.0) have been investigated by x-ray diffraction (XRD) and magnetization measurement. Analysis of the XRD patterns indicates that the samples with x≤0.4 mainly consist of HfFe_6Ge_6-type phase and the samples with 0.6≤x≤1.0 mainly consist of YCo_6Ge_6-type phase (P6/mmm). The lattice constants and the unit cell volume increase with increasing Sm content. The antiferro－ferri－ferromagnetic transitions can be observed with increasing Sm content. The samples with x=0.2 and 0.4 order antiferromagnetically at 420 and 425K, respectively. The samples with x=0.6, 0.8 and 1.0 order from ferri- to ferromagnetically over the whole magnetic ordering temperature range. The corresponding Curie temperatures are 435, 441 and 446K, respectively. The magnetoresistance (MR) isotherms of the sample with x=0.8, measured at various temperatures, are analysed. The magnitude of MR is found to be positive below 55K and gradually increases to a relatively large value of about 5.02% at 5K in a field of 5T as the temperature is lowered. A possible explanation for the positive MR is given.     

Magnetic resonance in multilayer Gd/Si/Co magnetic films

The magnetic properties of multilayer Gd/Si/Co magnetic films are experimentally studied by electron magnetic resonance and analyzed theoretically. The introduction of a semiconductor silicon interlayer is found to substantially affect the magnetic interlayer coupling and the magnetic dynamics of the system. The interlayer coupling is shown to be ferromagnetic for the (Gd/Si)_n films and to be antiferromagnetic for the (Gd/Si/Co/Si)_n films. The temperature dependences of the exchange parameters and the gyromagnetic ratios are determined. Possible mechanisms responsible for the formation of the interlayer coupling are discussed.     

Magnetic and transport properties of bilayered manganites La1.2Sr1.8Mn2-xGaxO7（x=0,0.08）

The magnetic and electrical properties of nonmagnetic Ga +3 ion substitution for Mn site are investigated in the bilayer manganite La 1.2 Sr 1.8 Mn 2 O 7.When the Mn is substituted by Ga,the ferromagnetic property obviously weakens,the magnetic transition temperature decreases and a spin-glass behaviour occurs at low temperature.Meanwhile,doping causes the resistivity to dramatically increase,the metal-insulator transition temperature to disappear,and a greater magneto-resistance effect to occur at low temperature.These effects result from the fact that Ga substitution dilutes the magnetic active Mn-O-Mn network and weakens the double exchange interaction,and further suppresses ferromagnetic ordering and metallic conduction.     

Magnetotransport properties and magnetocaloric effects of Mn1.95Cr0.05Sb0.95Ga0.05 compound

The magnetotransport properties and magnetocaloric effects of the compound Mn_{1.95}Cr_{0.05}Sb_{0.95}Ga_{0.05} have been studied. With decreasing temperature, a spontaneous first-order magnetic phase transition from ferrimagnetic (FI) to antiferromagnetic (AF) state takes place at T_s=200K. A metamagnetic transition from the AF to FI state can be induced by an external field, accompanied by a giant magnetoresistance effect of 57%. The magnetic entropy changes are determined from the temperature and field dependence of the magnetization using the thermodynamic Maxwell relation. Mn_{1.95}Cr_{0.05}Sb_{0.95}Ga_{0.05} exhibits a negative magnetocaloric effect, and the absolute values of ΔS_M^{max}(T,ΔH) are 4.4, 4.1, 3.6, 2.8 and 1.5 J/(kg·K) for magnetic field changes of 0－5T, 0－4T, 0－3T, 0－2T and 0－1T, respectively.     

Phase separation and abnormal transport behaviours in La0.7-xGdxSr0.3MnO3 system

The magnetic and transport behaviours of the La_{0.7-x}Gd_xSr_{0.3}MnO_3 (0≤x≤0.70) system are investigated. The experimental results indicate that with increasing Gd doping content, the magnetism of the system changes from the long-range ferromagnetic order state to the cluster-spin glass state, then to the antiferromagnetic (AFM) state. It is interesting that the phase separation appears at x=0.30 and 0.40 and disappears for x≥0.50 where the AFM state occurs. At high doping content, the transport behaviours exhibit abnormality, e.g. there are two temperature ranges in which the ρ－T curves can be well fitted by a variable-range hopping (VRH) model. We suggest that the VRH does not come from the hopping of carriers between clusters, but from the different magnetic backgrounds in the clusters.     

Magnetic properties and magnetoresistance effect of Y1-xGdxMn6Sn6 (x=0－1) compounds

The magnetic properties and magnetoresistance effect of Y_1-xGd_xMn₆Sn₆ (x=0－1) compounds have been investigated by magnetization and resistivity measurements in the applied field range (0－5 T). Compounds with x=0.4－1 display ferrimagnetic behaviours in the whole magnetic ordering temperature range, while compounds with x=0－0.2 display a field-induced metamagnetic transition, and the threshold fields decrease with increasing Gd content. The compounds with x=0.1－0.2 undergo an antiferromagnetic to ferromagnetic transition with increasing temperature. The cell-parameter a and c and cell-volume V of compounds (x=0－1) increase with increasing Gd content. It was found that the saturation magnetization M_s of the compounds (x=0.4－1) decreases, while the ordering points of the compounds (x=0－1)increase with increasing Gd content. A large MR effect was observed in the compound with x=0.2, and the maximum absolute value of MR at 5 K under 3 T is close to 19.3%.     

金属间化合物RMn2Ge2(R=La,Pr,Nd,Sm,Gd,Tb和Y)中的自发磁相变 及相变时的磁弹性异常

在10—800K的温度范围内用X射线衍射方法测量了RMn₂Ge₂(R=La,Pr ,Nd,Sm,Gd,Tb和Y)的晶格常数与温度的变化关系.在各种类型的自发磁相变观察到晶格常数 的磁弹性异常现象.实验得出,自发磁相变时的磁弹性异常主要由Mn次晶格引起,并且Mn-Mn 交换相互作用能不仅与晶格常数a有关,而且与晶格常数c有关.用Kittle的交换反转模型讨 论了低温时的铁磁—反铁磁一阶相变. 关键词： 稀土金属间化合物 磁相变 磁弹性     

Microstructural and magnetic properties of Ax:Zn1-xO (A=Mn,Gd and Mn/Gd) nanocrystals

We report the microstructural and magnetic properties of transition (3d) and rare earth (4f) metal substituted into the A_x:Zn_1?xO (A=Mn, Gd and Mn/Gd) nanocrystal samples synthesized by solgel method. The structural properties and morphology of all samples have been analysed using X-ray diffraction (XRD) method and scanning electron microscopy. The impurity phase in the XRD patterns for all samples is not seen, except (Mn/Gd):ZnO sample where a very weak secondary phase of Gd₂O₃ is observed. Due to the large mismatch of the ionic radii between Mn²⁺ and Gd³⁺ ions, the strain inside the matrix increases, unlike the crystallite size decreases with the substitution of Mn and Gd into ZnO system. A couple of additional vibration modes due to the dopant have been observed in Raman spectrum. The magnetic properties have been studied by vibrating sample magnetometer. The magnetic hysteresis shows that Mn:ZnO and Gd:ZnO have soft ferromagnetic (FM) behaviour, whereas (Mn/Gd):ZnO has strong FM behaviour at room temperature (RT). The enhancement of ferromagnetism (FM) in (Mn/Gd):ZnO sample might be related to short-range FM coupling between Mn²⁺ and Gd³⁺ ions via defects potential and/or strain-induced FM coupling due to the expansion lattice by doping. The experimental results indicate that RTFM can be achieved by co-substitution of 3d and 4f metals in ZnO which can be used in spintronics applications.     

Electronic structure and magnetic and optical properties of double perovskite Bi2 FeCrO6 from first-principles investigation

Double perovskite Bi2 FeCrO6 , related with multiferroic BiFeO3 , is very interesting because of its strong ferroelectricity and high magnetic Curie temperature beyond room temperature. We investigate its electronic structure and magnetic and optical properties by using a full-potential density-functional method. Our optimization shows that it is a robust ferrimagnetic semiconductor. This nonmetallic phase is formed due to crystal field splitting and spin exchange splitting, in contrast to previous studies. Spin exchange constants and optical properties are calculated. Our Monte Carlo magnetic Curie temperature is 450 K, much higher than any previously calculated value and consistent with experimental results. Our study and analysis reveal that the main magnetic mechanism is an antiferromagnetic superexchange between Fe and Cr over the intermediate O atom. These results are useful in understanding such perovskite materials and exploring their potential applications.     

Magnetic properties of the intermetallic compounds Gd(Mn1−xNix)2

The magnetic properties of pseudobinary compounds Gd(Mn_1−xNi_x)₂ were studied to understand the type of magnetic interaction among the constituent atoms of the parent binary compound. The Arrott plot for GdMn₂ indicates no spontaneous magnetization. The magnetization and the Curie temperature increase with increasing concentration of Ni on the Mn rich side. The collapse of the Mn moment makes the Gd moment dominant in magnetization with increasing Ni concentration.     

Room temperature ferromagnetism behavior of Sn1−xMnxO2 powders

In this paper, we have investigated Mn-doped SnO₂ powder samples prepared by solid-state reaction method. X-ray diffraction showed a single phase polycrystalline rutile structure. The atomic content of Mn ranged from ∼0.8 to 5 at%. Room temperature M-H loops showed a ferromagnetic behavior for all samples. The ferromagnetic Sn_0.987Mn_0.013O₂ showed a coercivity H_c=545 Oe, which is among the highest reported for dilute magnetic semiconductors. The magnetic moment per Mn atom was estimated to be about 2.54 μ_B of the Sn_0.9921Mn_0.0079O₂ sample. The average magnetic moment per Mn atom sharply decreases with increasing Mn content, while the effective fraction of the Mn ions contributing to the magnetization decreases. The magnetic properties of the Sn_1−xMn_xO₂ are discussed based on the competition between the antiferromagnetic superexchange coupling and the F-center exchange coupling mechanism, in which both oxygen vacancies and magnetic ions are involved.