Electronic structures and magnetic properties of CrSiTe3 single-layer nanoribbons

One-dimensional nanoribbons usually exhibit considerably different properties compared to their monolayer counterparts due to the formation of edge states and limited width. In this study, we systematically investigate the stability, electronic structures and magnetic properties of CrSiTe₃ single-layer nanoribbons with different edge configurations and ribbon widths using first-principles calculations. The results show that the edge energies (less than 0.4 eV/Å) for all studied CrSiTe₃ nanoribbons are much lower than that of graphene and many transition-metal dichalcogenide nanoribbons, indicating their stability and easy formation. Compared to the CrSiTe₃ monolayer with ferromagnetic semiconductor characteristics, some of CrSiTe₃ nanoribbons (N-SiCr-ZNRs, N-Te-ZNRs, N-TeCr-ANRs and N-Te-ANRs) become half-metal due to the hybridization between the d orbitals of edge Cr atoms and the p orbitals of edge Te atoms. While N-SiTe-ANRs are bipolar magnetic semiconductors, in which the states near Fermi level are localized around the nanoribbons edge. Our results show that CrSiTe₃ single-layer nanoribbons are promising candidates suitable for applications in spintronic devices.     

Electronic structures and edge effects of Ga_2S_2 nanoribbons

Ab initio density functional theory calculations are carried out to predict the electronic properties and relative stability of gallium sulfide nanoribbons(Ga_2S_2-NRs) with either zigzag- or armchair-terminated edges. It is found that the electronic properties of the nanoribbons are very sensitive to the edge structure. The zigzag nanoribbons(Ga_2S_2-ZNRs)are ferromagnetic(FM) metallic with spin-polarized edge states regardless of the H-passivation, whereas the bare armchair ones(Ga_2S_2-ANRs) are semiconducting with an indirect band gap. This band gap exhibits an oscillation behavior as the width increases and finally converges to a constant value. Similar behavior is also found in H-saturated Ga_2S_2-ANRs,although the band gap converges to a larger value. The relative stabilities of the bare ANRs and ZNRs are investigated by calculating their binding energies. It is found that for a similar width the ANRs are more stable than the ZNRs, and both are more stable than some Ga_2S_2 nanoclusters with stable configurations.     

Electronic structures for armchair-edge graphene nanoribbons under a small uniaxial strain

We theoretically investigate the electronic structures for armchair-edge graphene nanoribbons (AGNRs) under a small in-plane uniaxial strain along armchair (longitudinal) and zigzag (transversal) direction, respectively. We demonstrate that, by both the tight-binding calculation and first-principles study, the applying of a small asymmetrical strain results in variation of energy subband spacing, which opens a band gap for metallic AGNRs and modifies the band gaps for semiconducting AGNRs near the Fermi level. It is believed that these results are of importance in the band gap engineering and electromechanical applications of graphene-nanoribbon-based devices.     

Electronic transport through superlattice-graphene nanoribbons

In this work, we study quantum transport properties of superlattice-graphene nanoribbons (SGNRs) attached to two semi-infinite metallic armchair graphene nanoribbon (AGNR) leads. The calculations are based on the tight-binding model and Green’s function method, in which localization length, density of states (DOS) and conductance of the system are calculated, numerically. By controlling the layered boron concentration, this kind of system can separate the extended states from the localized states. Our results may have important applications for building blocks in the nano-electronic devices based on GNRs.     

Electronic structures of zigzag AlN, GaN nanoribbons and AlxGa1−xN nanoribbon heterojunctions: First-principles study

The electronic and structural properties of zigzag aluminum nitride (AlN), gallium nitride (GaN) nanoribbons and Al_xGa_1−xN nanoribbon heterojunctions are investigated using the first-principles calculations. Both AlN and GaN ribbons are found to be semiconductor with an indirect band gap, which decreases monotonically with the increased ribbon width, and approaching to the gaps of their infinite two dimensional graphitic-like monolayer structures, respectively. Furthermore, the band gap of Al_xGa_1−xN nanoribbon heterojunctions is closely related to Al (and/or Ga) concentrations. The Al_xGa_1−xN nanoribbon of width n=8 shows a continuously band gap varying from about 2.2 eV-3.1 eV as x increases from 0 to 1. The large ranged tunable band gaps in such a quasi one dimension structure may open up new opportunities for these AlN/GaN based materials in future optoelectronic devices.     

Zigzag型边界石墨烯纳米带的电子态

在紧束缚近似下, 提出有限系统的Bloch定理方法, 解析计算了Zigzag型石墨烯纳米带的电子态和能带.研究发现, 其电子态有两类, 分别是驻波态和边缘态; 驻波态的波矢为实数, 波函数是正弦函数形式; 边缘态的波矢主要是虚数, 实数部分为零或者π/2, 波函数是双曲正弦函数形式. Zigzag型石墨烯纳米带的能带由驻波态能量和边缘态能量组成, 我们推导了边缘态的关于无限长方向波矢和能量的精确取值范围. 讨论了边缘态和驻波态的过渡点, 发现两种电子态通过不同的方式在受限波矢趋于零时关于格点位置逼近线性关系. 当受限方向也变成无限长时, 可以得到与无限大石墨烯相同的能带关系. 关键词： 紧束缚模型 Zigzag型石墨烯纳米带 边缘态     

Electronic properties of bearded graphene nanoribbons

We investigate the electronic properties of graphene nanoribbons with attachment of bearded bonds as a model of edge modification. The main effect of the addition of the beards is the appearance of additional energy subbands. The originally gapless armchair graphene nanoribbons become semiconducting. On the other hand, the originally semiconducting armchair graphene nanoribbons may or may not change to gapless systems depending on the width. With the inclusion of a transverse electric field, the band structures of bearded graphene nanoribbons are further altered. An electric field creates additional band-edge states, and changes the subband curvatures and spacings. Furthermore, the energy band symmetry about the chemical potential is lifted by the field. With varying width, the bandgap demonstrates a declining zigzag behavior, and touches the zero value regularly. Modifications in the electronic structure are reflected in the density of states. The numbers and energies of the density of state divergent peaks are found to be strongly dependent on the geometry and the electric field strength. The beard also causes electron transfer among different atoms, and alters the probability distributions. In addition, the electron transfers are modified by the electric field. Finally, the field introduces more zero values in the probability distributions, and removes their left–right symmetry.     

锯齿型石墨烯纳米带的能带研究

运用π电子紧束缚模型,具体研究了锯齿型石墨烯纳米带(ZGNRs)的边界结构对能带,特别是费米面附近的导带和价带电子的影响.计算了七种不同边界结构的ZGNRs的能带色散关系及费米面附近价带电子在原胞中各原子上的分布情况.计算结果表明:两边界都无悬挂原子的NN-ZGNRs,只有一边界有悬挂原子的DN-ZGNRs,两边界都有五边形环的SPP-ZGNRs和ASPP-ZGNRs为金属性.两边界都有悬挂原子的DD-ZGNRs,一边界为五边形环另一边界无悬挂原子的PN-ZGNRs和一边界为五边形环另一边界有悬挂原子的P 关键词： 锯齿型石墨烯纳米带 紧束缚模型 电子密度分布 缺陷结构     

Electronic charge transport through ZnO nanoribbons

I–V characteristics of ZnO nanoribbons (NRs) have been investigated using density functional theory coupled to non-equilibrium Green’s Function. The current through the NRs drops with the increasing NR width, leveling off to 1.66 and 0.42 µA in zig-zag and arm-chair NRs respectively for widths ~20 Å at 3 V of electrical bias. The transconductance as well as the current flowing through the arm-chair NRs decays exponentially with NR width for both odd and even number of dimer lines traversed. The current through the zig-zag NRs falls off exponentially with NR width, being insensitive to the odd or even numbers of zig-zag lines appearing along the normal to the charge transport direction.     

Electronic properties of Li-doped zigzag graphene nanoribbons

Zigzag graphene nanoribbons (ZGNRs) are known to exhibit metallic behavior. Depending on structural properties such as edge status, doping and width of nanoribbons, the electronic properties of these structures may vary. In this study, changes in electronic properties of crystal by doping Lithium (Li) atom to ZGNR structure are analyzed. In spin polarized calculations are made using Density Functional Theory (DFT) with generalized gradient approximation (GGA) as exchange correlation. As a result of calculations, it has been determined that Li atom affects electronic properties of ZGNR structure significantly. It is observed that ZGNR structure exhibiting metallic behavior in pure state shows half-metal and semiconductor behavior with Li atom.     

Electronic structures and magnetic properties of Zn-and Cd-doped AlN nanosheets:A first-principles study

In this paper, the magnetic properties, electronic structures and the stabilities of Zn/Cd incorporated two-dimensional Al N nanosheets are investigated by the first-principles method. Numerical results indicate that Zn and Cd substituting Al atom in Al N nanosheets introduce some holes into the 2p orbitals of the N atoms, and the holes mainly come from spindown 2p orbitals of the N atoms. The magnetic moment of 1.0 μBis produced by Zn/Cd doping Al N nanosheets, and the main component of the magnetic moment of the system is contributed by the partially filled 2p states of the N atoms around the dopant. In particular, when Zn/Cd substituting Al atoms, the magnetic coupling is found to be ferromagnetic. We attribute the hole-mediated p–d interaction to the created ferromagnetic coupling. More importantly, the result of formation energy indicates that Al atom is more inclined to be replaced by Zn atom rather than Cd. This finding is beneficial to developing the spin electronic devices.     

Electronic and magnetic properties of graphene nanoribbons

Molecular orbital calculations of the electronic properties of graphene nanoribbons as a function of length in the nanometre range show a pronounced decrease in the band gap and ionization potential with increasing length. It is shown that length can be used to design the materials to be insulating, semiconducting or metallic. A low ionization potential (work function), less than single walled carbon nanotubes, is obtained at the longest length of the calculation (2.3?nm). This latter result suggests the possibility of using graphene nanoribbons as electric field induced electron emitters. Calculations on boron and nitrogen doped carbon nanoribbons indicate that the triplet state is more stable than the singlet state.     

Electronic transport for impurity-doped armchair-edge graphene nanoribbons

We investigate the electronic transport for an impurity-doped armchair-edge graphene nanoribbon (AGNR), with 7 or 8 dimer lines along zigzag direction, sandwiched between two normal leads. By using the standard nonequilibrium Green’s function technique, it is demonstrated that, the impurity influence on the transport properties for system with semiconducting 7-AGNR system is more sensitive than that for one with metallic 8-AGNR system in the vicinity of the impurity energy level. In particular, in the absence of impurity the density of states (DOS) and linear conductance G possess a small zero value interval for 7-AGNR system and a large nonzero plateau for 8-AGNR one, respectively. Interestingly, as impurity included the DOS and G show a single sharp resonant peak around the impurity energy level for 7-AGNR system due to resonant tunneling, while a small dip appears in the same position for 8-AGNR system due to the antiresonance states. Moreover, we have also inspected the behavior of the differential conductance upon varying the impurity concentration for the systems. The findings here may suggest it is more favorable to fabricate an electric switch with high on-off ratio by using an impurity-assisted semiconducting AGNR.     

Electronic and transport properties of boron-doped graphene nanoribbons

We report a spin polarized density functional theory study of the electronic and transport properties of graphene nanoribbons doped with boron atoms. We considered hydrogen terminated graphene (nano)ribbons with width up to 3.2 nm. The substitutional boron atoms at the nanoribbon edges (sites of lower energy) suppress the metallic bands near the Fermi level, giving rise to a semiconducting system. These substitutional boron atoms act as scattering centers for the electronic transport along the nanoribbons. We find that the electronic scattering process is spin-anisotropic; namely, the spin-down (up) transmittance channels are weakly (strongly) reduced by the presence of boron atoms. Such anisotropic character can be controlled by the width of the nanoribbon; thus, the spin-up and spin-down transmittance can be tuned along the boron-doped nanoribbons.     

Vanadium sulfide nanoribbons: Electronic and magnetic properties

We report the structural, electronic and magnetic properties of zigzag-type 2H-VS₂ nanoribbons based on the first-principles calculations. Our results suggest that the zigzag-type 2H-VS₂ nanoribbons are intrinsic ferromagnetic or ferrimagnetic materials dependent on their edge structures. The S-terminated VS₂ nanoribbons with or without hydrogen saturation at the edges are ferromagnetic, whereas V-terminated VS₂ nanoribbons are ferrimagnetic at their ground states. The average magnetic moment per V atom of VS₂ nanoribbons increases monotonously with their width, but still smaller than that of perfect VS₂ monolayer. These results imply the great potential of VS₂ nanoribbons in spintronics application.     

AlN/InN和AlN/GaN超晶格能带结构研究

利用Krönig-Penney 模型和形变势理论,从理论上探讨了纤锌矿型AlN/InN和AlN/GaN超晶格系统的能带结构及不同应变模式对能带结构的影响,计算得到了能带结构随各亚层参量变化的一般性规律、超晶格的能量色散关系、应变造成的影响以及不同亚层厚度的系统禁带宽度和导带第一子禁带宽度.研究发现,通过改变亚层厚度可以从不同形式设计能带结构,应变会改变系统禁带宽度,使带阶和子能带明显窄化,价带结构趋于复杂甚至生成准能带结构.与实验结果对比后发现,该模型适于模拟窄势阱结构超晶格,而对于宽势阱则必须 关键词： AlN/InN和AlN/GaN超晶格 Krönig-Penney模型 应变 子能带