Effect of structure anisotropy on low temperature spin dynamics in quantum wells

Spin dynamics of two-dimensional electron gas confined in an asymmetrical quantum well is studied theoretically in the regime where the scattering frequency is comparable with the spin precession frequency due to the conduction band spin splitting. The spin polarization is shown to demonstrate quantum beats. If the spin splitting is determined by both bulk and structural asymmetry mechanisms the beats are damped at zero temperature even in the absence of a scattering. We calculate the decay of spin beats due to the thermal broadening of the electron distribution function and electron scattering. The magnetic field applied along the structure growth axis is shown to increase the frequency of the beats and shift system towards the collision dominated regime.     

Contribution of the electron-phonon interaction to the broadening of cyclotron resonance line of a two-dimensional electron gas in multiple quantum well structures

Summary The theory of cyclotron resonance (CR) lineshape of a two-dimensional electron gas (2 DEG) due to the electron-phonon interaction in multiple-quantum-well structures (MQWS) is investigated. The contribution of the deformation potential acoustic and piezoelectric phonon scattering to the broadening of the cyclotron resonance spectra (CRSB) of such a system is calculated fro GaAs/AlAs. The piezoelectric phonon scattering contribution to the linewidth is smaller as compared to the deformation potential acoustic phonon scattering but is significantly comparable. The magnetic-field dependence of CRSB due to the deformation potential acoustic and piezoelectric phonons isB ^1/2 andB ^1/4, respectively, and the frequency shift Δ _N,p =0 for both interactions in the elastic-scattering approximation. Observed numerical values of the CRSB indicate that at low temperatures acoustic and piezoelectric phonons are dominant scatterers and interact strongly with 2 DEG in MQWS where the impurity scattering is suppressed due to the modulation doping. To speed up publication, the author of this paper has agreed to not receive the proofs for correction.     

Electron-phonon interaction and cyclotron resonance in two-dimensional electron gas

Results for the influence of electron-phonon interaction on the cyclotron effective mass and the resonance linewidth in a two-dimensional electron gas are presented. The temperature and magnetic field dependence is studied and the existence of quantum oscillations is demonstrated. It is shown that the relevant phonon frequency in typical MOS inversion layers is very small so that magneto-transport properties are temperature dependent even at a few degrees Kelvin. Results are consistent with the observed temperature, magnetic field and frequency dependence in Si(100) inversion layers.     

Terahertz radiation-induced magnetoresistance oscillations of a high-density and high-mobility two-dimensional electron gas

The terahertz response of a high-density and high-mobility two-dimensional electron gas in 13-nm GaAs quantum wells at frequencies of 0.7 and 1.63 THz has been investigated. Terahertz radiation-induced magnetoresistance oscillations have been discovered. The oscillation maxima coincide with the harmonics of cyclotron resonance. It has been shown that a large number of harmonics (up to the ninth) appear under irradiation at a frequency of 0.7 THz. In this case, the effect is the analogue of microwave-induced oscillations. At a higher frequency, the oscillation amplitude decreases drastically with an increase in the harmonic number. This indicates a transition to the regime of ordinary cyclotron harmonics.     

Cyclotron resonance in a two-dimensional electron system with self-organized antidots

Experimental data are reported on studying cyclotron resonance in a two-dimensional electron system with an artificial random scattering potential generated by an array of self-organized AlInAs quantum islands formed in the plane of an AlGaAs/GaAs heterojunction. A sharp narrowing of the cyclotron resonance line is observed as the magnetic field increases, which is explained by the specific features of carrier scattering in this potential. The results obtained point to the formation of a strongly correlated electron state in strong magnetic fields at carrier concentrations smaller than the concentration of antidots.     

Cyclotron resonance in a two-dimensional semimetal based on a HgTe quantum well

Microwave cyclotron resonance of electrons and holes at the metal-to-semimetal transition in HgTe quantum wells with an inversed band structure has been investigated. The resonance has been studied by measuring microwave photoresistance in the frequency range of 35–170 GHz. The effective cyclotron masses of electrons and holes have been determined. A shift of the cyclotron resonance of the two-dimensional electrons at the metal-to-semimetal transition possibly caused by plasma effects in the two-dimensional semimetal has been discovered.     

Cyclotron resonance of two-dimensional electrons forming wigner crystal

The cyclotron resonance peak shape is analysed for two-dimensional electrons interacting with surface vibrations of a medium. Explicit expressions for the broadening and shift of the peak are obtained at low and high electron densities.     

Coherent and Incoherent Contributions to the Damping of Cyclotron Magnetoplasma Resonance for Two-Dimensional Electrons

The spectrum of resonant microwave absorption for a two-dimensional electron disk is studied by the optical detection technique. The dependence of the width of cyclotron magnetoplasma resonance on the electron density and on the size of the two-dimensional electron system is analyzed. The contributions of the coherent radiative and incoherent collision mechanisms to the relaxation of magnetoplasma excitations are measured. It is demonstrated that the ratio of the length of the electromagnetic wave and the lateral size of the twodimensional electron system is an important parameter determining the width of the resonance.     

Oscillatory magnetoconductivity of a two-dimensional electron system due to phonon scattering

Summary A quantum-statistical theory of magnetophonon resonance oscillations in two-dimensional systems has been developed, starting from the resolvent representation of Kubo's formula and its proper connected diagram expansion. Non-polar and polar optical-phonon scattering has been considered and the results show, as anticipated based on the physical considerations and experimental observations, conductivity oscillations as a function of magnetic field with the magnetophonon resonances occurring at the phonon frequencies {ie1539-1} {ie1539-2}=cyclotron frequency). Divergences occurring in the magnetoconductivity near the magnetophonon resonances are removed by using the full resolvent operator in the tetradic self-energy operator of an electron. These additional terms provide necessary damping of the magnetophonon resonance oscillations. The present results are also shown to be qualitatively similar to those obtained by others using quantum Boltzmann's equation approach to quantum transport theory.     

Rayleigh scattering of light by two-dimensional electrons in a high magnetic field

Resonance Rayleigh scattering of light by a two-dimensional electron system in the ultraquantum limit is investigated. The scattering process under study involves electronic states belonging to the two spin sublevels of the zero Landau level. It is shown that the main contribution to resonance Rayleigh scattering originates from the fluctuations of the random potential in the quantum well hosting the two-dimensional system.     

Cyclotron resonance study of conduction electrons in n-type indium antimonide under a strong magnetic field—I: Thermal equilibrium case

The far IR cyclotron resonance of conduction electrons is investigated in n-type indium antimonide in the quantum regimes, ?ω_ck_BT and ?ω_c?k_BT. The resonance peak position, half width, and the degree asymmetry in the line shape are studied as a function of temperature. In analyzing the experimental data, the three band model has been employed together with modern theoretical results of electron scattering by ionized impurities in the presence of a strong magnetic field. It is found that, for example for an experiment at 84 μm, the Une width depends very little on temperature between 4.2 and 45 K where the ionized impurity scattering is dominant, and increases rapidly with temperature above 45 K where the onset of phonon scattering is expected. Further details of the ionized impurity scattering were investigated by using three different laser wavelengths 84, 119 and 172μm. The line width at the phonon-limited temperature region depends very little on magnetic field and sample. The temperature dependence of the band gap was also determined by analysis of the resonance peak shift.     

Terahertz time-domain magnetospectroscopy of a high-mobility two-dimensional electron gas

We have observed cyclotron resonance in a high-mobility GaAs/AlGaAs two-dimensional electron gas by using the techniques of terahertz time-domain spectroscopy combined with magnetic fields. From this, we calculate the real and imaginary parts of the diagonal elements of the magnetoconductivity tensor, which in turn allows us to extract the concentration, effective mass, and scattering time of the electrons in the sample. We demonstrate the utility of ultrafast terahertz spectroscopy, which can recover the true linewidth of cyclotron resonance in a high-mobility (>10(6) cm(2)V(-1)s(-1)) sample without being affected by the saturation effect.     

Resonant scattering of ultracold atoms in low dimensions

Low energy scattering amplitudes for two atoms in one- and two-dimensional atomic waveguides are derived for short range isotropic and resonant interactions in high partial wave channels. Taking into account the finite width of the resonance which was neglected in previous works is shown to have important implications in the properties of the confinement induced resonances. For spin polarized fermions in quasi-1D waveguides, it imposes a strong constraint on the atomic density for achieving the Fermi Tonks Girardeau gas. For a planar waveguide, the characteristics of the 2D induced scattering resonances in p- and d-waves are determined as a function of the 3D scattering parameters and of the waveguide frequency.     

Influence of retardation effects on a 2D magnetoplasmon spectrum

Within a dissipationless limit, the magnetic field dependence of the magnetoplasmon spectrum for an unbounded two-dimensional electron gas (2DEG) system was found to intersect the cyclotron resonance line and, then, approach the frequency given by light dispersion relation. Recent experiments done for macroscopic disc-shaped 2DEG systems confirm theoretical expectations.     

Quantum transport in GaInAs-AlInAs heterojunctions,and the influence of intersubband scattering

Shubnikov-de Haas and cyclotron resonance results are presented for GaInAs-AlInAs heterojunctions in both perpendicular and tilted magnetic fields. Two electric subbands are occupied in zero magnetic field. Magnetic depopulation of the higher (E₁) subband is observed in both perpendicular and tilted orientations. This enables a demonstration of the importance of intersubband scattering in both resistivity and cyclotron resonance. A shift of the relative positions of the E_o and E₁ subbands by parallel magnetic fields is measured to be 0.26 meV/T².     

简单磁镜中热电子等离子体的基本特性

本文叙述了简单磁镜中,热电子等离子体的实验结果。微波在基频共振层击穿气体产生等离子体,二次偕振加热产生热电子环。等离子体激发了低频交换模和漂移波,热电子环对等离子体的扰动有稳定作用。     

Giant magnetoresistance oscillations induced by microwave radiation and a zero-resistance state in a 2D electron system with a moderate mobility

The effect of a microwave field in the frequency range from 54 to 140 GHz on the magnetotransport in a GaAs quantum well with AlAs/GaAs superlattice barriers and with an electron mobility no higher than 10⁶ cm²/V s is investigated. In the given two-dimensional system under the effect of microwave radiation, giant resistance oscillations are observed with their positions in the magnetic field being determined by the ratio of the radiation frequency to the cyclotron frequency. Earlier, such oscillations had only been observed in GaAs/AlGaAs heterostructures with much higher mobilities. When the samples under study are irradiated with a 140-GHz microwave field, the resistance corresponding to the main oscillation minimum, which occurs near the cyclotron resonance, appears to be close to zero. The results of the study suggest that a mobility value lower than 10⁶ cm²/V s does not prevent the formation of zero-resistance states in a magnetic field in a two-dimensional system under the effect of microwave radiation.     

Spin relaxation of two-dimensional electrons in a hall ferromagnet

Electron spin resonance in a system of two-dimensional electrons with a high electron mobility has been investigated and the position, width, intensity, and line shape of the resonance microwave absorption have been studied as functions of the filling factor and temperature. It has been shown that the ESR linewidth in high-electron-mobility GaAs/AlGaAs quantum wells may reach 30 MHz, which corresponds to a spin relaxation time of the two-dimensional electrons of 10 ns. The experimental data on the linewidth of the spin resonance at a filling factor of 1 are compared with the theoretical results for various spin relaxation mechanisms. It has been shown that the dominant mechanism of spin relaxation at a filling factor of 1 and a temperature of 1.5–4 K is the mutual scattering of spin excitons.     

Novel magneto-oscillatory behavior of confined electrons at a twin boundary in ZnSe and at an interface in GaAs/AlGaAs heterostructures

Electronic properties of confined electrons at naturally formed twin boundaries in ZeSe have been investigated by microwave absorption measurements. Cyclotron resonance signal of the confined electrons was observed. On the cyclotron resonance peak, novel oscillation of the absorption intensity was observed. Similar oscillatory behavior was also observed in GaAs/AlGaAs heterostructures near cyclotron resonance filed at which new Shubnikov–de Haas-like oscillation was observed by Zudov. The oscillatory structure has a period not in inverse magnetic field but magnetic field. The origin of the oscillation observed is caused by Rayleigh interference of two-dimensional electron gas.     

Optical detection of cyclotron resonance for characterization of recombination processes in semiconductors

Novel applications of the technique of optically detected cyclotron resonance (ODCR) are discussed. This method is an extension of the conventional cyclotron resonance investigations and shows important advantages when applied to characterization of semiconductor materials. These advantages are due to a higher sensitivity and a longer momentum relaxation time caused by photoneutralization of ionized impurities. This in turn enables experiments at lower magnetic fields and lower microwave radiation frequency. Photoexcitation used in ODCR often results in a simultaneous observation of electron and hole cyclotron resonances in the same sample, which is a rare case in a conventional CR study. High magnetic field far infrared ODCR experiments utilize all these advantages of the method. For the most common X-band (10 GHz) microwave setups, the ODCR resolution often is too low to allow accurate CR determination of the band structure parameters of the material studied. In that case, ODCR may be used for high-resolution photoluminescence experiments and for identification of carrier capture and recombination paths at impurities, as was proposed recently. These new and important applications of the ODCR technique are described here, and documented by recent experimental results. The mechanism of ODCR detection for pure and doped semiconductors is discussed, and a prominent role of the impact ionization mechanism is demonstrated. This is followed by a discussion of recent applications of ODCR for identification of recombination mechanisms. Then high spectral resolution ODCR experiments are described, with the example of overlapping free-to-bound and donor-acceptor pair transitions. Some special applications of ODCR are demonstrated. ODCR also can be applied to analyze quantum confinement of carriers in two-dimensional (2D) structures such as heterojunctions and quantum wells. It is shown that useful information can be obtained on the electronic properties of the 2D electron (or hole) gas and the interlayer carrier transfer enhanced by carrier heating at CR absorption in such structures.