High electron mobility in solution-cast and vapor-deposited phenacyl-quaterthiophene-based field-effect transistors: toward N-type polythiophenes

New carbonyl-functionalized quaterthiophenes, 5,5' '-diperfluorophenylcarbonyl-2,2':5',2' ':5' ',2' '-quaterthiophene [DFCO-4T], 5,5' '-diphenyl-2,2':5',2' ':5' ',2' '-quaterthiophene [DPCO-4T], and a polymer having the same basic motif as DFCO-4T, poly{1,4-bis[(3'-n-octyl-2,2'-dithiophene)carbonyl]-2,3,5,6-tetrafluorobenzene} [P(COFCO-4T)], have been synthesized, characterized, and the crystal structures of the molecules determined. Field-effect transistors fabricated with vapor-deposited and solution-cast films of DFCO-4T exhibit very high Ion:Ioff current ratios (up to 108) and electron mobilities up to approximately 0.51 and approximately 0.25 cm2.V-1.s-1, respectively. Solution-cast blends of P(COFCO-4T) and DFCO-4T (1:1 weight ratio) exhibit an electron mobility of approximately 0.01 cm2.V-1.s-1 (Ion:Ioff = 104).     

2,7-Diphenyl[1]benzothieno[3,2-b]benzothiophene, a new organic semiconductor for air-stable organic field-effect transistors with mobilities up to 2.0 cm2 V(-1) s(-1)

Vapor-deposited thin films of a newly developed sulfur-containing heteroarene, 2,7-diphenyl[1]benzothieno[3,2-b][1]benzothiophene (DPh-BTBT), were used as an active layer of OFETs, which showed excellent FET characteristics in ambient conditions with mobilities of approximately 2.0 cm2 V-1 s-1 and Ion/Ioff of 107.     

Highly soluble [1]benzothieno[3,2-b]benzothiophene (BTBT) derivatives for high-performance, solution-processed organic field-effect transistors

2,7-Dialkyl[1]benzothieno[3,2-b]benzothiophenes were tested as solution-processible molecular semiconductors. Thin films of the organic semiconductors deposited on Si/SiO2 substrates by spin coating have well-ordered structures as confirmed by XRD analysis. Evaluations of the devices under ambient conditions showed typical p-channel FET responses with the field-effect mobility higher than 1.0 cm2 V-1 s-1 and Ion/Ioff of approximately 10(7).     

Fluorocarbon-modified organic semiconductors: molecular architecture, electronic, and crystal structure tuning of arene- versus fluoroarene-thiophene oligomer thin-film properties

We present here the systematic synthesis and comparative physicochemical characterization of a series of regiochemically varied and core size extension-modulated arene(perfluoroarene)-thiophene oligomers. The molecules investigated are: 5,5'-diphenyl-2,2':5',2':5',2'-quaterthiophene (1), 5,5'-bis[1-[4-(thien-2-yl)phenyl]]-2,2'-dithiophene (2), 4,4'-bis[5-(2,2'-dithiophenyl)]-biphenyl (3), 5,5'-diperfluorophenyl-2,2':5',2':5',2'-quaterthiophene (4), 5,5'-bis[1-[4-(thien-2-yl)perfluorophenyl]]-2,2'-dithiophene (5), 4,4'-bis[5-(2,2'-dithiophenyl)]-perfluorobiphenyl (6), 5,5'-diperfluorophenyl-2,2':5',2'-tertthiophene (7), 5,5'-diperfluorophenyl-2,2'-dihiophene (8), and 5,5-diperfluorophenylthiophene (9). Trends in optical absorption and emission parameters, molecular structures as defined by single-crystal X-ray diffraction, as well as electrochemical redox processes are described. The morphologies and microstructures of the vapor-deposited films grown over a range of growth temperatures have also been characterized. Field-effect transistor (FET) measurements demonstrate that all of these materials are FET-active and, depending on the molecular architecture, exhibit comparably good p- or n-type mobility when optimum film microstructural order is achieved. A very large n-channel mobility of approximately 0.5 cm2/Vs with I(on)/I(off) ratios > 10(8) is achieved for films of 4.     

Flexible organic photovoltaic devices based on oligothiophene derivatives

For the purpose of developing flexible organic photovoltaic devices, we have fabricated two flexible devices using 5-formyl- 2,2′：5′,2″：5″,2′″-quaterthiophene （4T-CHO）, 5-formyl-2,2′：5′, 2″：5″,2′″：5′″,2″″-quinquethiophene （5T-CHO） and 3,4,9,10-perylenetertracarboxylic dianhydride （PTCDA）. The PET-ITO/4T-CHO/PTCDA/A1 device has an open circuit voltage （Voc） of 1.56 V, photoelectric conversion efficiency of 0.77%. The PET-ITO/5T-CHO/PTCDA/A1 device has a Voc of 1.70 V, photoelectric conversion efficiency of 0.84%. The two flexible devices have high Voc （1.56 and 1.70 V）. It is possible that intermolecular hydrogen bonding between -CHO group of nT-CHO and carboxylic dianhydride of PTCDA contributes to enhancing the efficiency by promoting interfacial electron transfer and eliminating the subconducting band trap sites.     

A theoretical study on the low-lying excited states of 2,2':5',2'-terthiophene and 2,2':5',2':5',2'-quaterthiophene.

The nature and properties of the low-lying singlet and triplet valence excited states of 2,2':5',2'-terthiophene (terthiophene) and 2,2':5',2':5',2'-quaterthiophene (tetrathiophene) are discussed on the basis of high-level ab initio computations. The spectroscopic features determined experimentally for short alpha-oligothiophenes are rationalised on theoretical grounds. Special attention is devoted to the nonradiative decay process through intersystem crossing (ISC) from the singlet to the triplet manifold, which is known to be relatively less efficient in tetrathiophene. Along the geometry relaxation of the S1 state of terthiophene, the S1 and T2 states become degenerate, which leads to a favourable situation for the occurrence of ISC. The parallel process is expected to be less favoured in tetrathiophene because of the less efficient spin-orbit coupling and the increase of the S1-T2 energy gap.     

含硒杂环萘二酰亚胺衍生物的合成及其场效应性能研究

萘二酰亚胺(NDI)类化合物由于其较好的平面性和较强的接受电子能力,被广泛应用于有机场效应晶体管(OFETs)和有机太阳能电池中(OSCs).然而,高迁移率的n型和双极性NDI类半导体材料较少.基于此,本文设计合成了核位硒杂环修饰的NDI衍生物,通过引入1,2-二硒苯和1,2-二硒萘基团,对其能级进行了有效的调控,获得...     

Polyhydroxyoligothiophenes. 2. Hydrogen-Bonding-Oriented Solid State Conformation of 3,3'-Bis(2-hydroxyethyl)-2,2'-bithiophene and Regioselective Synthesis of the Corresponding Head-to-Head/Tail-to-Tail Quater- and Sexithiophene

This paper reports the X-ray structure of 3,3'-bis(2-hydroxyethyl)-2,2'-bithiophene (1), which is the building block for the synthesis of head-to-head/tail-to-tail 2-hydroxyethyl-substituted oligothiophenes. Contrary to all the bithiophenes reported so far, 1 exhibits a noncoplanar anti conformation and an inter-ring twist angle (67.5 degrees ) which is the largest ever measured for adjacent rings of alpha-conjugated oligothiophenes. This unusual conformation appears to be dictated by intermolecular hydrogen-bonding interactions involving the OH groups, which bind the molecule in close packed layers. The paper also describes the regioselective synthesis of the dimer and the trimer of 1, namely of 3,3',4",3"'-tetrakis(2-hydroxyethyl)-2,2':5',2":5",2"'-quaterthiophene (3c) and of 3,3',4",3"',4",3"'-hexakis(2-hydroxyethyl)-2,2':5',2":5",2"':5"',2":5",2"'-sexithiophene (4b). 3c And 4b were obtained through palladium(0)-catalyzed coupling of the mono- and distannanes of the tetrahydropyranyl derivative of 1 with the appropriate monobromo compound (Stille's reaction). Finally, the paper reports force-field calculations which suggest that the low lambda(max) values measured for 1, 3c, and 4b are also the result of intramolecular hydrogen-bonding interactions which favor highly twisted conformations in solution.     

咔唑衍生物DiPICz载流子传输性能的理论研究

依据Marcus理论, 在密度泛函理论水平下对咔唑衍生物Dibenzo[2,3: 5,6]pyrrolizino[1,7-bc]indolo-[1,2,3-lm]carbazole(DiPICz)的电子结构和传输性质进行系统研究. 计算结果表明, DiPICz的电子迁移率(5.81×10^-2 cm²·V^-1·s^-1)反常地高出空穴迁移率(6.02×10^-4 cm²·V^-1·s^-1)2个数量级, 表明稠合修饰可能是一种潜在的转变传输材料极性的手段. 分析发现, 导致DiPICz具有较好电子传输性质的原因在于相对较小的电子重组能和较好的晶体堆积方式. 在其鱼骨型堆积的晶体中, 存在着滑移的π-π及边对面的 CH…N和CH…π相互作用. 这些相互作用由于形成二维的电荷传输通道, 从而在电子传输中起着重要作用.     

Theoretical characterization of hole mobility in BTBPD

(E)-5,5'-Bis(5-(benzo[b]thiophen-2-yl)thiophen-2-yl)-1,1'-bis(2-ethylhexyl)-[3,3'-bipyrrolylidene]-2,2'(1H,1'H)-dione (BTBPD) has been reported by Zhang and co-workers. To further understand the charge-transporting nature of BTBPD, the density-functional theory (DFT) and the Marcus charge transfer theory were performed. The character of the frontiermolecular orbitals, reorganization energies and transfer integrals in different directions were considered in details. The results revealed that the BTBPD has high hole transport efficiency (μ = 0.29 cm2 V-1 s-1). The intermolecular π-π interaction and S…S interaction provide the holes transport channels.     

Easily processable phenylene-thiophene-based organic field-effect transistors and solution-fabricated nonvolatile transistor memory elements

The synthesis of a new series of mixed phenylene-thiophene oligomers is reported; 2,5-bis(4-n-hexylphenyl)thiophene (dH-PTP, 1), 5,5'-bis(4-n-hexylphenyl)-2,2'-bithiophene (dH-PTTP, 2), 5,5' '-bis(4-n-hexylphenyl)-2,2':5',2' '-terthiophene (dH-PT(3)P, 3), 5,5' "-bis(4-n-hexylphenyl)-2,2':5',2' ':5' ',2' "-quaterthiophene (dH-PT(4)P, 4), 1,4-bis[5-(4-n-hexylphenyl)-2-thienyl]benzene (dH-PTPTP, 5), and 2,5-bis[4(4'-n-hexylphenyl)phenyl]thiophene (dH-PPTPP, 6) were characterized by (1)H NMR, elemental analysis, UV-visible spectroscopy, differential scanning calorimetry, and thermogravimetric analysis. Vacuum-evaporated and solution-cast films were characterized by X-ray diffraction and scanning electron microscopy. All compounds display high p-type carrier mobilities as evaporated (up to 0.09 cm(2)/Vs) and as solution-cast (up to 0.03 cm(2)/Vs) films on both Si/SiO(2) and ITO/GR (glass resin) substrates. The straightforwardly synthesized dH-PTTP (2) displays an unprecedented combination of mobility, on/off ratio, stability, and processability. Both dH-PTTP (2) and dH-PPTPP (6) display a reversible, tunable, and stable memory effect even as solution-cast devices, with turn-on characteristics shifting from accumulation mode to zero or depletion mode after a writing voltage V(w) is applied. The charge storage is distributed over the gate dielectric structure and is concentrated near the dielectric-semiconductor interface, as evidenced by the response of "floating gate" configuration devices. Simple nonvolatile elements have been fabricated by solution-only techniques on ITO substrates using spin-coated glass resin, solution-cast oligomeric semiconductors, and painted graphite paste electrodes.     

High-performance semiconducting polythiophenes for organic thin-film transistors

Conjugated polymers have been widely studied as potential semiconductor materials for organic thin-film transistors (TFTs). However, they have provided functionally poor transistor properties when the TFTs are fabricated in air. We have developed a class of liquid crystalline regioregular polythiophenes, PQTs, that possess sufficient air stability to enable achievement of excellent TFT properties under ambient conditions. These polythiophenes exhibit unique self-assembly ability and form highly structured thin films when deposited from solution under appropriate conditions. TFTs fabricated in air with PQT channel layers have provided high field-effect mobility to 0.14 cm2 V-1 s-1 and high current modulation to over 107, together with other desirable transistor properties. These high-performance polythiophenes will therefore help bring the long-standing concept of low-cost organic/polymer transistor circuits closer to commercial reality.     

High performance solution-processed indium oxide thin-film transistors

In2O3 thin-film transistors (TFTs) were fabricated on various dielectrics [SiO2, self-assembled nanodielectrics (SANDs)] by spin-coating In2O3 film precursor solutions consisting of ethanolamine (EAA) and InCl3 in methoxyethanol. Optimized film microstructures are characterized by the high-mobility In2O3 00 L orientation and are obtained only within a well-defined range of base: In3+ molar ratios. Electron mobilities as high as approximately 44 cm2 V(-1) s(-1) are measured for n+-Si/SAND/In2O3/Au devices using an EAA/In3+ molar ratio = 10. This result combined with Ion/Ioff ratios of approximately 10(6) and <5 V operating voltages is encouraging for high-speed applications.In2O3 thin-film transistors (TFTs) were fabricated on various dielectrics [SiO2, self-assembled nanodielectrics (SANDs)] by spin-coating In2O3 film precursor solutions consisting of ethanolamine (EAA) and InCl3 in methoxyethanol. Optimized film microstructures are characterized by the high-mobility In2O3 00 L orientation and are obtained only within a well-defined range of base: In3+ molar ratios. Electron mobilities as high as ~44 cm2 V(-1) s(-1) are measured for n+-Si/SAND/In2O3/Au devices using an EAA/In3+ molar ratio = 10. This result combined with Ion/Ioff ratios of approximately 10(6) and <5 V operating voltages is encouraging for high-speed applications.     

A cyclic triphenylamine dimer for organic field-effect transistors with high performance

A cyclic ethylene linked triphenylamine dimer formed highly crystalline thin film via vapor deposition. Meanwhile, the corresponding linear molecule only resulted in amorphous films under the same condition. The performance as FET semiconductor also improved significantly when the molecular structure derived from linear to cyclic type. The cyclic molecule displayed mobilities in excess of 10-2 cm2 V-1 s-1 and high on/off ratios up to 107.     

D-A Copolymers Based on a Pentacyclic Acceptor Unit and a 3,3′-Difluoro-2,2′-bithiophene for Solar Cells

A D-A copolymer, P2FBTTPTI, was developed by copolymerizing a pentacyclic acceptor unit, thieno[2′,3′:5,6]pyrido[3,4-g]thieno[3,2-c]isoquinoline-5,11(4 H,10 H)-dione(TPTI), with 3,3′-difluoro-2,2′-bithiophene(2 FBT). P2 FBTTPTI possessed a low highest occupied molecular orbital(HOMO) energy level(-5.50 e V) and a good hole mobility(4.14 × 10~(-4) cm~2·V~(-1)·s~(-1)). P2FBTTPTI:PC_(71)BM solar cells gave a decent power conversion efficiency(PCE) of 7.64% and a high open-circuit voltage(V_(oc)) of 0.95 V.     

Electropolymerization of Pd(II) complexes containing phosphinoterthiophene ligands

A series of Pd complexes of 3'-diphenylphosphino-2,2':5'2' '-terthiophene (1a, dppterth) in which the metal is coordinated in three different modes have been prepared and electropolymerized, resulting in the formation of conductive thin films. In [Pd2(mu-Cl2)(dppterth-P,C3)2] (3a) the metal is P,C-coordinated, in [PdCl2(dppterth-P)2] (4a) the coordination is monodentate via the phosphine, and in [Pd(dppterth-P,C3)(dppterth-P,S1)][PF6] (5a) both P,C- and P,S-coordination modes are found. In 5a, the coordinated thiophene is hemilabile and may be displaced by reaction with more strongly coordinating ligands such as isocyanides. To probe the effect of blocking the alpha-position of the terthienyl moiety with methyl groups, 3'-diphenylphosphino-5-methyl-2,2':5'2' '-terthiophene (1b, Me-dppterth) and 3'-diphenylphosphino-5,5' '-dimethyl-2,2':5'2' '-terthiophene (1c, Me2-dppterth) were prepared, and the corresponding series of Pd complexes was synthesized. One of these complexes, [Pd(Me2-dppterth-P,C3)(Me2-dppterth-P,S1)][PF6] (5c), has been crystallographically characterized. The electropolymerized films prepared from 5a react with isonitriles, and shifts in the absorption spectra of the electropolymerized materials are observed upon reaction. A Pd complex has also been prepared from 5-diphenylphosphino-2,2':5'2' '-terthiophene (2, 5dppterth), and this complex has been electropolymerized. All the electropolymerized thin films have been characterized using EDX analysis, which demonstrates good correspondence with the elemental analysis of the respective monomers, and the maximum conductivities of the films are near 10(-4) S x cm(-1). Comparing the electropolymerization behavior of the complexes, along with their electrochemical and spectroscopic data, allows conclusions to be drawn regarding the involvement of pi-delocalization and the metal group in the conductivity of the materials.     

Highly conjugated (polypyridyl)metal-(porphinato)zinc(II) compounds: long-lived, high oscillator strength, excited-state absorbers having exceptional spectral coverage of the near-infrared

Transient dynamical studies of ruthenium(II) [5-(4'-ethynyl-(2,2';6',2' '-terpyridinyl))-10,20-bis(2',6'-bis(3,3-dimethyl-1-butyloxy)phenyl)porphinato]zinc(II)-(2,2';6',2' '-terpyridine)2+ bis-hexafluorophosphate (Ru-PZn), osmium(II) [5-(4'-ethynyl-(2,2';6',2' '-terpyridinyl))-10,20-bis(2',6'-bis(3,3-dimethyl-1-butyloxy)phenyl)porphinato]zinc(II)-(2,2';6',2' '-terpyridine)2+ bis-hexafluorophosphate (Os-PZn), ruthenium(II) [5-(4'-ethynyl-(2,2';6',2' '-terpyridinyl))-15-(4'-nitrophenyl)ethynyl-10,20-bis(2',6'-bis(3,3-dimethyl-1-butyloxy)phenyl)porphinato]zinc(II)-(2,2';6',2' '-terpyridine)2+ bis-hexafluorophosphate (Ru-PZn-A), osmium(II) [5-(4'-ethynyl-(2,2';6',2' '-terpyridinyl))-15-(4'-nitrophenyl)ethynyl-10,20-bis(2',6'-bis(3,3-dimethyl-1-butyloxy)phenyl)porphinato]zinc(II)-(2,2';6',2' '-terpyridine)2+ bis-hexafluorophosphate (Os-PZn-A), and ruthenium(II) [5-(4'-ethynyl-(2,2';6',2' '-terpyridinyl))-ruthenium(II)-15-(4'-ethynyl-(2,2';6',2' '-terpyridinyl))-10,20-bis(2',6'-bis(3,3-dimethyl-1-butyloxy)phenyl)porphinato]zinc(II)-bis(2,2';6',2' '-terpyridine)4+ tetrakis-hexafluorophosphate (Ru-PZn-Ru), and ruthenium(II) [5-(4'-ethynyl-(2,2';6',2' '-terpyridinyl))-osmium(II)-15-(4'-ethynyl-(2,2';6',2' '-terpyridinyl))-10,20-bis(2',6'-bis(3,3-dimethyl-1-butyloxy)phenyl)porphinato]zinc(II)-bis(2,2';6',2' '-terpyridine) tetrakis-hexafluorophosphate (Ru-PZn-Os) show that these highly conjugated supermolecular chromophores feature electronically excited states that absorb over broad NIR spectral windows with considerable oscillator strength and manifest lifetimes (1-50 mus) that are extraordinarily long relative to those of classic low band-gap organic materials. The excited-state absorptive domains of these strongly coupled multipigment ensembles can be extensively modulated. For sequential one-photon absorptive processes, these compounds evince large sigmae, sigmae/sigmag, and sigmae - sigmag values. As the combination of all these properties within single chromophoric entities have heretofore lacked precedent within the NIR, these and closely related structures may find particular utility in a variety of technologically important optical-limiting applications.     

Creation of Functional Organic Gels Based on Oligothiophenes

Polymer gels have received a great deal of attention not only from scientific interest but also for their practical applications. Recently, low molecular-weight organic gels have also been receiving growing attention. However, their have been few studies of low molecular-weight organic gels in contrast to extensive studies of polymer gels. In order to develop a novel class of low-molecular-weight organic gels and to gain an insight into the relationship between molecular structures of gel-form…     

Organic-inorganic perovskites containing trivalent metal halide layers: the templating influence of the organic cation layer

Thin sheetlike crystals of the metal-deficient perovskites (H2AEQT)M2/3I4 [M = Bi or Sb; AEQT = 5,5"'-bis-(aminoethyl)-2,2':5',2':5',2'-quaterthiophene] were formed from slowly cooled ethylene glycol/2-butanol solutions containing the bismuth(III) or antimony(III) iodide and AEQT.2HI salts. Each structure was refined in a monoclinic (C2/m) subcell, with the lattice parameters a = 39.712(13) A, b = 5.976(2) A, c = 6.043(2) A, beta = 92.238(5) degrees, and Z = 2 for M = Bi and a = 39.439(7) A, b = 5.952(1) A, c = 6.031(1) A, beta = 92.245(3) degrees, and Z = 2 for M = Sb. The trivalent metal cations locally adopt a distorted octahedral coordination, with M-I bond lengths ranging from 3.046(1) to 3.218(3) A (3.114 A average) for M = Bi and 3.012(1) to 3.153(2) A (3.073 A average) for M = Sb. The new organic-inorganic hybrids are the first members of a metal-deficient perovskite family consisting of (Mn+)2/nV(n-2)/nX4(2-) sheets, where V represents a vacancy (generally left out of the formula) and the metal cation valence, n, is greater than 2. The organic layers in the AEQT-based organic-inorganic hybrids feature edge-to-face aromatic interactions among the rigid, rodlike quaterthiophene moieties, which may help to stabilize the unusual metal-deficient layered structures.