红外热波成像法测量固体材料热扩散率

本文通过采用连续激光调制对试样周期加热产生稳定的温度波动和红外扫描动态测温的红外热波成像法获得温度波动的相位和幅值分布，测量固体材料热扩散率。介绍了红外热波成像法的测量原理和实验系统，推导了热扩散率测量的相位法、幅值法和相位－幅值复合法。对不锈钢和纯镍试样的热扩散率进行了测试。测量结果表明，该方法具有较高的精度。     

周期热流法测量薄膜材料热扩散率的二维效应分析

符号表A无量纲温度幅值L。热扩散长度。1二维效应作用区边界AD温度幅值。试样表面法向Yd样品无量纲厚度AO特征温度q热源热流。材料热扩散率C材料体积比热容qb热源热流幅值。”测量热扩散率d样品厚度T试样上某点温度A材料导热系数h表面等效换热系数几边界温度p温度相位He无量纲换热系数。。光源边界。测量角频率1前言使用周期热流法测量薄膜材料面向热扩散率的基本原理如图1所示，调制光对试样加热，遮光板沿V方向以一定速度V移动，引起试样上热源边界l变化，假设没有热损失，试样上经历沿。方向的一维导热过程，则热电偶测得之温度幅…     

高速碰撞诱发闪光辐射温度的测量及误差分析

为实现对高速碰撞诱发的闪光辐射温度进行实验测量及误差分析,建立了二级轻气炮加载系统及闪光辐射温度测量系统。采用聚碳酸酯弹丸分别以6 km/s、3.9 km/s的速度垂直撞击2A12铝靶,利用瞬态光纤高温计采集闪光信号,通过比色法计算不同碰撞条件下的闪光辐射强度及辐射温度。依据普朗克辐射定律计算了不同波长及温度条件下的闪光辐射强度理论值,与实验测量结果相比较并进行了误差分析;分别采用双色测温法的不同波长组合及四色测温法计算了闪光辐射温度及其平均温度,通过计算标准差分析了波长的选取对闪光辐射温度的影响。结果表明：与理论计算结果相比较,实验测量得到的闪光辐射强度值偏低,采用双色测温法计算闪光辐射温度时波长的选取对计算结果影响很大,波长间隔越大计算结果误差越小（误差最小值实验No.1为68.25 K,实验No.2为30.67 K）;四色测温法计算得到的闪光辐射温度与平均温度相近（误差实验No.1为72.88 K,实验No.2为63.66 K）,因此采用比色法计算闪光辐射温度时应尽量选取大间隔波长或多个波长参与计算以降低误差。     

利用激光光热技术研究钛酸钡材料的导热性能

利用激光光热偏转技术测量了钛酸钡材料的热扩散率。根据所测量材料的光热光偏转信号,通过最小二乘法中的非线性拟合,直接拟合出了材料的热扩散率,克服了光热偏转技术中“Mirage effect”步骤多、计算复杂、误差大的缺点。测量了在不同成型压力和不同烧结温度下钛酸钡材料的热扩散率,得到了热扩散率随成型压力和烧结温度的变化规律。对实验结果进行了分析和讨论。     

周期热流法测量复合膜热扩散率的分析

在周期加热下薄膜二维导热分析的基础上，探讨了复合股非稳态导热的数值分析方法，并计算了使用周期热流法测量复合膜面向热扩散车时试样上温度波相位和幅值的分布．指出复合膜各膜层导热性质相差很大时，膜材料面向导热与基于一线导热分析的结果是不同的，为复合膜的测量提供了理论基础．     

拉曼闪光法测量纳米薄膜热扩散率的理论分析

本文基于圆柱坐标径向一维非稳态导热模型和激光拉曼测温技术提出了瞬态激光拉曼方法(拉曼闪光法)用于测量纳米薄膜材料径向的热扩散率。拉曼闪光法使用方波脉冲激光周期加热圆形孔上悬浮的薄膜样品,在热量传递到达基底之前,通过改变激光脉冲宽度或改变激光光斑半径大小的方法可以消除激光吸收率并获得纳米薄膜的热扩散率。灵敏度和误差分析表明改变激光光斑半径比改变激光脉冲宽度的方法具有更好的测量精度。     

反射式热透镜时变信号测量固体热扩散率的研究

介绍了采用反射式热透镜时变信号测量固体热扩散率的一种简便方法,该方法结合表面热透镜技术原理,采用表面透镜的动态变化和反射的探测光发散的幅度来确定固体的热扩散率,相对于传统的热扩散率测量方法要快捷简单。对较大范围的一系列物质的热学特性进行了实验研究,证明了其实用性。     

利用瞬态热栅技术研究Sr2FeMoO6的热扩散系数及其温度效应

为研究Sr2FeMoO6的热扩散系数及其温度效应,利用瞬态热栅法研究了不同温度下Sr2FeMoO6热扩散系数变化,发现在温度300～360 K范围内,Sr2FeMoO6热扩散系数随着温度升高缓慢减小;在居里温度Tc～380 K附近,热扩散系数剧烈下降;在温度400～450 K范围内,热扩散系数随着温度升高基本保持不变....     

光热偏转检测技术自动测量的研究

介绍了光热偏转技术自动测量材料热物性的原理及实验方法。根据光热偏转检测理论建立了一套自动检测系统,从自动控制、数据采集和数据处理等方面实现了光热偏转检测技术的自动化测量。设计出了步进电机自动控制和数据处理软件。利用该系统对钛酸锶钡材料的热扩散率进行了测量,发现随着掺杂量铈的增加,钛酸锶钡的热扩散率逐渐减小,当掺杂量铈增加到一定值时,其热扩散率又开始增加。     

材料在红外和紫外光谱区折射率的测定方法

本文讨论了在红外和紫外光谱区测定材料折射率的三种相对法:V棱镜法、菲涅尔法和干涉法,及其测量原理、实验装置、测量方法及误差分析。与绝对法相比较,相对法具有测量方法简便、试样制备容易、对实验室环境要求不苛刻,无需进行温度压力校正等优点。     

GaP材料热导率的测量

针对目前用于半导体材料掺杂浓度纵向深度分布测量用的方法，如Ｃ－Ｖ法、电化学法等方法对样品造成的损伤或污染，本文提出一种非接触式的光热法测量技术。并结合室温下光热法测得的实验数据计算了ＧａＰ∶Ｎ多层材料中不同杂质浓度下的热导率，获得热导率随半导体内掺入的杂质浓度增加而减小的关系。这一结果与现有用光热法测量单层结构的半导体材料得到的规律相符合，从而表明了用光热法对层状半导体材料进行掺杂浓度纵向分布测量的可行性；同时还讨论半导体内临近层间结晶程度的差异对光热信号幅度造成的影响。     

石英晶体旋光性的温度效应测试研究

为了测试温度对石英晶体旋光性的影响,采用陶瓷平板型半导体制冷器件作为温控器,设计、建立了石英晶体旋光性温度效应的测试系统,对石英晶体旋光特性的温度效应进行了测试研究：在-10～60℃的温度范围内,从实验上测试了石英晶体的旋光角随温度的变化。实验结果表明：对于确定的单色光,随着温度的升高石英晶体的旋光率增大。根据测试结果,通过求解塞耳迈耶尔方程和四次拟合的方法,得出了塞耳迈耶尔方程的常数与温度的关系式,从而可以得出任意温度下不同波长对应的石英晶体的旋光率。     

Measurement of thermal expansion coefficient of nonuniform temperature specimen

A new technique is developed to measure the longitudinal thermal expansion coefficient of C/C composite material at high temperature. The measuring principle and components of the apparatus are described in detail. The calculation method is derived from the temperature dependence of the thermal expansion coefficient. The apparatus mainly consists of a high temperature environmental chamber, a power circuit of heating, two high-speed pyrometers, and a laser scanning system. A long solid specimen is resistively heated to a steady high-temperature state by a steady electrical current. The temperature profile of the specimen surface is not uniform because of the thermal conduction and radiation. The temperature profile and the total expansion are measured with a high-speed scanning pyrometer and a laser slit scanning measuring system, respectively. The thermal expansion coefficient in a wide temperature range (1000 - 3800 K) of the specimen can therefore be obtained. The perfect consistency between the present and previous results justifies the validity of this technique.     

氮化铝陶瓷低温热导率的实验研究

根据轴向稳态热流法原理 ,实验研究了 Al N陶瓷的低温热导率 ,为高温超导制冷机直接冷却提供了必要的实验数据。 Al N的热导率在 30～ 170 K之间 ,随温度的升高而增大 ,在 10 0 K时达到 5 8.36 W/ (m· K)。根据平均自由程理论 ,对影响氮化铝陶瓷热导率的微观因素进行了分析 ,影响本次测试氮化铝样品低温热导率的主要因素为声子与缺陷之间的散射。     

Viscosity and diffusivity in melts: from unary to multicomponent systems

Viscosity and diffusivity, two important transport coefficients, are systematically investigated from unary melt to binary to multicomponent melts in the present work. By coupling with Kaptay’s viscosity equation of pure liquid metals and effective radii of diffusion species, the Sutherland equation is modified by taking the size effect into account, and further derived into an Arrhenius formula for the convenient usage. Its reliability for predicting self-diffusivity and impurity diffusivity in unary liquids is then validated by comparing the calculated self-diffusivities and impurity diffusivities in liquid Al- and Fe-based alloys with the experimental and the assessed data. Moreover, the Kozlov model was chosen among various viscosity models as the most reliable one to reproduce the experimental viscosities in binary and multicomponent melts. Based on the reliable viscosities calculated from the Kozlov model, the modified Sutherland equation is utilized to predict the tracer diffusivities in binary and multicomponent melts, and validated in Al–Cu, Al–Ni and Al–Ce–Ni melts. Comprehensive comparisons between the calculated results and the literature data indicate that the experimental tracer diffusivities and the theoretical ones can be well reproduced by the present calculations. In addition, the vacancy-wind factor in binary liquid Al–Ni alloys with the increasing temperature is also discussed. What’s more, the calculated inter-diffusivities in liquid Al–Cu, Al–Ni and Al–Ag–Cu alloys are also in excellent agreement with the measured and theoretical data. Comparisons between the simulated concentration profiles and the measured ones in Al–Cu, Al–Ce–Ni and Al–Ag–Cu melts are further used to validate the present calculation method.     

Noncontact measurement of the thermal diffusivity of IR semi-transparent and semiconducting n-CdMgSe mixed crystals by means of the photothermal radiometry

In this paper we present results of noncontact measurements of the thermal diffusivity of infrared semi-transparent n-CdMgSe mixed semiconductor crystals by means of the photothermal radiometry (PTR) in a transmission configuration. In order to overcome an influence of the infrared semi-transparency and plasma waves on the PTR signal from n-CdMgSe mixed crystals the samples were covered by thin aluminum foils on both sides. The thermal diffusivities of n-CdMgSe mixed crystals were estimated from PTR phase frequency characteristics using a well-known formula. It was found that the obtained results are underestimated in comparison to thermal diffusivities estimated from the PPE (photopyro-electric) measurements. A three layer model of a PTR signal was applied in order to estimate an error in determination of the thermal diffusivity of a sample caused by aluminum foils.     

Application of interferometric enhancement to self-absorbing thin film thermal IR detectors

Uncooled thermal IR detectors require a suitable absorbing mechanism in order to achieve efficient radiation capture. For bulk detector materials such as ferroelectric ceramics this mechanism may be a broad-band absorber in the form of a metallic black layer, or a thin-film optical interference filter tuned for maximum absorption at the desired wavelength, deposited onto the surface of the detector.A thin metal film having a sheet resistance of 189 Ω per square can absorb 50% of incident radiation, and is employed in the metal film resistance bolometer detector and Golay cell. In this paper an interferometric technique for thin film thermal detectors is described, whereby a thermally sensitive material in the form of a semiconductor or dielectric layer becomes an integral component of a 3-layer absorber stack. The theory of this absorber structure is reviewed and compared with experimental data. It is shown that an effective absorption of 90% can be achieved over the waveband 8–13μm for a blackbody radiation source at 300 K temperature.     

Growth of crystalline quartz films with AT-cut plane by means of catalyst-enhanced vapor-phase epitaxy under atmospheric pressure

Crystalline quartz films with an AT-cut plane have been grown by catalyst-enhanced vapor-phase epitaxy, at atmospheric pressure, using two quartz buffer layers on a sapphire (110) substrate. In this method, the first quartz buffer layer was deposited on the sapphire (110) substrate at 773 K. After annealing at 823 K, the second buffer layer was deposited at 723 K. The crystal quartz epitaxial layer was then grown at 843 K. The X-ray full-width-at-half-maximum (FWHM) value of the crystalline quartz film obtained was smaller than that of crystalline quartz prepared using a hydrothermal process. The crystalline quality of the quartz films was dependent on the thickness of the buffer layers. Furthermore, it was found that angle control of the cut plane depended on the film thickness of the second buffer layer. The quartz films grown by vapor phase epitaxy show good oscillation characteristics at room temperature.     

激光辐照引起的材料温度场和热应力场的瞬态分布

 光电探测器吸收激光后的温升以及因温升造成的各种现象,致使探测器遭受到不同程度的损伤。利用热弹性理论对CO2激光器辐照K9玻璃材料进行研究,建立激光辐照材料温升及热应力分布二维平面模型,通过解析计算得到由激光辐照半导体材料引起的温度场和应力场的瞬态分布。研究表明, K9玻璃材料的激光辐照损伤阀值与辐照时间和光斑半径相关。在同一条件下,造成的热应力损伤阀值较熔融损伤的低,故K9玻璃材料的破坏形态为热应力破坏。